CN109300981A - A kind of thin film transistor (TFT) - Google Patents
A kind of thin film transistor (TFT) Download PDFInfo
- Publication number
- CN109300981A CN109300981A CN201811270519.6A CN201811270519A CN109300981A CN 109300981 A CN109300981 A CN 109300981A CN 201811270519 A CN201811270519 A CN 201811270519A CN 109300981 A CN109300981 A CN 109300981A
- Authority
- CN
- China
- Prior art keywords
- tft
- active layer
- insulating layer
- film transistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 20
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- 238000000034 method Methods 0.000 description 12
- 230000006872 improvement Effects 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910020489 SiO3 Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K Indium trichloride Inorganic materials Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Abstract
The invention discloses a kind of thin film transistor (TFT)s, including substrate, grid, insulating layer, active layer, source electrode and drain electrode, wherein, for active layer in the thin film transistor (TFT) using Nb-In-O film made of the Nb-In-O material that stability is preferable and Hall mobility is high, the thin film transistor (TFT) made has high stability and high Hall mobility (> 30cm2V‑1s‑1) and be able to satisfy ultrahigh resolution display driving demand simultaneously, simultaneously, so that active layer and other layers of structure have better interfacial contact after overlapping, electric property is excellent, and the thin film transistor (TFT) that can also further help in bottom gate top contact structure, bottom gate bottom contact structures, top-gated bottom contact structures and top-gated top contact structure has better stability and higher Hall mobility.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of thin film transistor (TFT).
Background technique
Thin film transistor (TFT) (TFT, Thin Film Transistor) is mainly used in control and driving liquid crystal display
(LCD, Liquid Crystal Display), Organic Light Emitting Diode (OLED, Organic Light-Emitting
Diode) the sub-pixel of display is one of most important electronic device in flat display field.
New A MOLED display technology due to have many advantages, such as high image quality, low-power consumption, it is frivolous, can flexibility become currently should
The new lover in field.With advances in technology and continuous improvement of people's living standards, FPD is just towards ultrahigh resolution (8K
× 4K) direction develops, and therefore, to the thin-film transistor technologies as backboard, more stringent requirements are proposed.Thin film transistor backplane
Core technology of the technology as FPD, traditionally, it is only necessary to which device Hall mobility is in 10cm2V-1s-1Left and right, Ji Keman
The luminous driving demand of sufficient OLED pixel.However, needing the device of thin film transistor (TFT) with the development of ultrahigh resolution display technology
Part Hall mobility reaches 30cm2V-1s-1It is just able to satisfy driving demand above；And the commercialization of current main-stream based on
The thin film transistor (TFT) Hall mobility about 10cm of InGaZnO (IGZO) material system2V-1s-1Left and right, is not able to satisfy driving superelevation
The requirement that resolution ratio is shown.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, provide a kind of thin film transistor (TFT), having in the thin film transistor (TFT)
Active layer uses film made of the material with high stability and Hall mobility, and the thin film transistor (TFT) made has high stable
Property and high Hall mobility (> 30cm2V-1s-1) and be able to satisfy simultaneously ultrahigh resolution show driving demand so that active layer and its
Its layer structure has better interfacial contact after overlapping, and electric property is excellent.
The solution that the present invention solves its technical problem is: a kind of thin film transistor (TFT), including substrate, grid, insulating layer,
Active layer, source electrode and drain electrode, the active layer are using film made from the material with high stability and Hall mobility, institute
The section for stating thin film transistor (TFT) includes bottom gate top contact structure, bottom gate bottom contact structures, top-gated bottom contact structures and top-gated apical grafting
Touch structure.Wherein, the material with high stability and Hall mobility is Nb-In-O material, and manufactured film is Nb-
In-O film.
As a further improvement of the above technical scheme, the film with a thickness of 5-100nm.
As a further improvement of the above technical scheme, the bottom of the bottom gate top contact structure is substrate, the substrate
Top be equipped with grid and insulating layer, and the insulating layer cover grid, the insulating layer be equipped with active layer, the active layer
Top be equipped with the source electrode and drain electrode that is connected respectively with the both ends of active layer.
As a further improvement of the above technical scheme, the bottom of bottom gate bottom contact structures is substrate, the substrate
Top be equipped with grid and insulating layer, and the insulating layer cover grid, the insulating layer be equipped with active layer, the insulating layer
Top further respectively have the source electrode and drain electrode being connected with insulating layer both ends, and active layer covers source electrode and drain electrode.
As a further improvement of the above technical scheme, the bottom of top-gated bottom contact structures is substrate, the substrate
Top be equipped with active layer, the source electrode and drain electrode being connected with substrate both ends, and active layer covering are additionally provided with above the substrate
Source electrode and drain electrode, the top of the active layer are equipped with insulating layer, are equipped with grid above insulating layer.
As a further improvement of the above technical scheme, the bottom of the top-gated top contact structure is substrate, the substrate
Top be equipped with active layer, the top of the active layer is equipped with insulating layer, further respectively had above the active layer with it is active
The connected source electrode and drain electrode in the both ends of layer, and insulating layer covers source electrode and drain electrode, the top of the insulating layer is equipped with grid.
Wherein, the material of the substrate is selected from plastics or glass, and the material of the grid is selected from metal alloy, metal and thoroughly
One of bright conducting oxide, with a thickness of 10~1000nm, the material of the source electrode is selected from metal alloy, metal and transparent leads
One of oxide body, with a thickness of 10~1000nm, the material of the drain electrode is selected from metal alloy, metal and transparent conductor oxygen
One of compound, with a thickness of 10~1000nm.
As a further improvement of the above technical scheme, the insulating layer is selected from the oxide or amorphous state of high dielectric constant
Dielectric substance, wherein the oxide of high dielectric constant includes HfO2--SiO2And ZrO2-SiO2, amorphous state dielectric substance packet
Include SiO3、AO3、SN4、Y2O3And HfO2, the insulating layer with a thickness of 0~1000nm.
The beneficial effects of the present invention are: the present invention provides a kind of thin film transistor (TFT)s, wherein in the thin film transistor (TFT)
Active layer is using Nb-In-O film made of the Nb-In-O material that stability is preferable and Hall mobility is high, the film made
Transistor has high stability and high Hall mobility (> 30cm2V-1s-1) and be able to satisfy ultrahigh resolution display driving need simultaneously
It asks, meanwhile, so that active layer and other layers of structure have better interfacial contact after overlapping, electric property is excellent, and can also
Further help in the thin of bottom gate top contact structure, bottom gate bottom contact structures, top-gated bottom contact structures and top-gated top contact structure
Film transistor has better stability and higher Hall mobility.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.Obviously, described attached drawing is a part of the embodiments of the present invention, rather than is all implemented
Example, those skilled in the art without creative efforts, can also be obtained according to these attached drawings other designs
Scheme and attached drawing.
Fig. 1 is the cross section structure schematic diagram of the thin film transistor (TFT) of bottom gate top contact structure in the present invention；
Fig. 2 is the cross section structure schematic diagram of the thin film transistor (TFT) of bottom gate bottom contact structures in the present invention；
Fig. 3 is the cross section structure schematic diagram of the thin film transistor (TFT) of top-gated bottom contact structures in the present invention；
Fig. 4 is the cross section structure schematic diagram of the thin film transistor (TFT) of top-gated top contact structure in the present invention；
Appended drawing reference: 1, substrate；2, grid 3, insulating layer；4, active layer；5, source electrode；6, it drains.
Specific embodiment
It is carried out below with reference to technical effect of the embodiment and attached drawing to design of the invention, specific structure and generation clear
Chu is fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this hair
Bright a part of the embodiment, rather than whole embodiments, based on the embodiment of the present invention, those skilled in the art are not being paid
Other embodiments obtained, belong to the scope of protection of the invention under the premise of creative work.In addition, be previously mentioned in text
All connection relationships not singly refer to that component directly connects, and referring to can be according to specific implementation situation, by adding or reducing connection
Auxiliary, to form more preferably connection structure.Each technical characteristic in the invention, under the premise of not conflicting conflict
It can be with combination of interactions.
Embodiment 1
Referring to Fig.1~Fig. 4, a kind of thin film transistor (TFT), including substrate 1, grid 2, insulating layer 3, active layer 4, source electrode 5 and leakage
Pole 6, for the active layer 4 using Nb-In-O film made from Nb-In-O material, the section of the thin film transistor (TFT) includes bottom gate
Top contact structure, bottom gate bottom contact structures, top-gated bottom contact structures and top-gated top contact structure.Wherein, active layer 4 is using stabilization
Property preferably and Nb-In-O film made of the high Nb-In-O material of Hall mobility, the thin film transistor (TFT) made have high steady
Qualitative and high Hall mobility (> 30cm2V-1s-1) and be able to satisfy ultrahigh resolution display driving demand simultaneously, meanwhile, so that having
Active layer 4 and other layers of structure have better interfacial contact after overlapping, and electric property is excellent, and can also further help in bottom
Grid top contact structure, bottom gate bottom contact structures, top-gated bottom contact structures and top-gated top contact structure thin film transistor (TFT) have more preferably
Stability and higher Hall mobility.
Wherein, the Nb-In-O film in active layer 4 can be by being made by physical vaporous deposition or solwution method, wherein
The physical vaporous deposition includes magnetron sputtering, atomic layer deposition and pulsed laser deposition, and the solwution method includes colloidal sol-
Gel method and ink-jet printing.
Active layer 4 is prepared by the method for magnetron sputtering, i.e., by Nb2O5And In2O3Pressure sintering system is blended by a certain percentage
At target, Nb-In-O target is obtained, wherein the mass percent of the two is Nb2O5: In2O3=(5-10) %:95%, by Nb-
In-O target deposits Nb-In-O film on target position in sputtering chamber and through magnetron sputtering, recycles the method for picking up gear mask
It is patterned, obtains active layer.
The material that active layer uses also can be used in direct sputtering or cosputtering or solwution method in physical vaporous deposition
The method of solution spin coating prepared, be patterned by photoetching or mask method.
Specifically, the method directly sputtered is proportionally to prepare two kinds of materials of niobium (Nb) and indium (In) in the same target
It is sputtered on material.
The method of cosputtering is by Nb and the corresponding oxide Nb of two kinds of elements of In2O5And In2O3Target is prepared separately into pacify
It is sputtered mounted in corresponding target position, adjusts Nb/In atomic ratio by adjusting each target position corresponding power.
Spin-coating method is by the corresponding presoma Nb of Nb and In2O5·nH2O and InCl3Mixing is made into corresponding solution, then
It is formed a film by the method for spin coating, by high annealing, forms Nb-In-O film.
Nb-In-O film deposition process operating pressure be 0.5Pa, Nb-In-O film deposition process also need using
To argon gas and oxygen, wherein working gas Ar:O2=5%:98% (flow-rate ratio).
As further preferred embodiment, the film with a thickness of 5-100nm.
Fig. 1 is bottom gate top contact structure, and the substrate 1 is located at the bottom of bottom gate top contact structure, the top of the substrate 1
Equipped with grid 2 and insulating layer 3, and the insulating layer 3 covers grid 2, and the insulating layer 3 is equipped with active layer 4, the active layer
4 top is equipped with the source electrode 5 being connected respectively with the both ends of active layer 4 and drain electrode 6.
Fig. 2 is bottom gate bottom contact structures, and the bottom of bottom gate bottom contact structures is substrate 1, and the top of the substrate 1 is set
There are grid 2 and insulating layer 3, and the insulating layer 3 covers grid 2, the insulating layer 3 is equipped with active layer 4, the insulating layer 3
Top further respectively have the source electrode 5 being connected with 3 both ends of insulating layer and drain electrode 6, and active layer 4 cover source electrode 5 and drain electrode 6.
Fig. 3 is top-gated bottom contact structures, and the bottom of top-gated bottom contact structures is substrate 1, and the top of the substrate 1 is set
There is active layer 4, the top of the substrate 1 is additionally provided with the source electrode 5 being connected with 1 both ends of substrate and drain electrode 6, and active layer 4 covers source
Pole 5 and drain electrode 6, the top of the active layer 4 are equipped with insulating layer 3, are equipped with grid 2 above insulating layer 3.
Fig. 4 is top-gated top contact structure, and the bottom of the top-gated top contact structure is substrate 1, and the top of the substrate 1 is set
There is active layer 4, the top of the active layer 4 is equipped with insulating layer 3, and the top of the active layer 4 further respectively has and active layer 4
The connected source electrode 5 in both ends and drain electrode 6, and insulating layer 3 covers source electrode 5 and drain electrode 6, the top of the insulating layer 3 is equipped with grid 2.
Further, the material of the substrate 1 is selected from plastics or glass, and the material of the grid 2 is selected from metal alloy, metal
One of with transparent conducting oxide, with a thickness of 10~1000nm, the material of the source electrode 5 and drain electrode 6 is respectively selected from metal
One of alloy, metal and transparent conducting oxide, thickness are 10~1000nm.
As further preferred embodiment, the insulating layer 3 is selected from the oxide or amorphous state electricity of high dielectric constant
Dielectric material, wherein the oxide of high dielectric constant includes HfO2-SiO2And ZrO2-SiO2, amorphous state dielectric substance includes
SiO3、AO3、SN4、Y2O3And HfO2, the insulating layer 3 with a thickness of 0~1000nm.
Better embodiment of the invention is illustrated above, but the invention is not limited to the implementation
Example, those skilled in the art can also make various equivalent modifications on the premise of without prejudice to spirit of the invention or replace
It changes, these equivalent variation or replacement are all included in the scope defined by the claims of the present application.
Claims (10)
1. a kind of thin film transistor (TFT), including substrate, grid, insulating layer, active layer, source electrode and drain electrode, which is characterized in that described to have
Active layer is using film made from the material with high stability and Hall mobility, and the section of the thin film transistor (TFT) includes bottom
Grid top contact structure, bottom gate bottom contact structures, top-gated bottom contact structures and top-gated top contact structure.
2. thin film transistor (TFT) according to claim 1, which is characterized in that the film with a thickness of 5-100nm.
3. thin film transistor (TFT) according to claim 1, which is characterized in that the bottom of the bottom gate top contact structure is base
Plate, the top of the substrate is equipped with grid and insulating layer, and the insulating layer covers grid, and the insulating layer is equipped with active
Layer, the top of the active layer are equipped with the source electrode and drain electrode being connected respectively with the both ends of active layer.
4. thin film transistor (TFT) according to claim 1, which is characterized in that the bottom of bottom gate bottom contact structures is base
Plate, the top of the substrate is equipped with grid and insulating layer, and the insulating layer covers grid, and the insulating layer is equipped with active
Layer, further respectively has the source electrode and drain electrode being connected with insulating layer both ends above the insulating layer, and active layer covering source electrode with
Drain electrode.
5. thin film transistor (TFT) according to claim 1, which is characterized in that the bottom of top-gated bottom contact structures is base
Plate, the top of the substrate are equipped with active layer, are additionally provided with the source electrode and drain electrode being connected with substrate both ends above the substrate, and
Active layer covers source electrode and drain electrode, and the top of the active layer is equipped with insulating layer, is equipped with grid above insulating layer.
6. thin film transistor (TFT) according to claim 1, which is characterized in that the bottom of the top-gated top contact structure is base
Plate, the top of the substrate are equipped with active layer, and the top of the active layer is equipped with insulating layer, and the top of the active layer is also distinguished
Equipped with the source electrode and drain electrode that the both ends with active layer are connected, and insulating layer covers source electrode and drain electrode, sets above the insulating layer
There is grid.
7. thin film transistor (TFT) according to claim 1, which is characterized in that the material of the grid is selected from metal alloy, gold
One of category and transparent conducting oxide, with a thickness of 10~1000nm.
8. thin film transistor (TFT) according to claim 1, which is characterized in that the material of the source electrode is selected from metal alloy, gold
One of category and transparent conducting oxide, with a thickness of 10~1000nm.
9. thin film transistor (TFT) according to claim 1, which is characterized in that the material of the drain electrode is selected from metal alloy, gold
One of category and transparent conducting oxide, with a thickness of 10~1000nm.
10. thin film transistor (TFT) according to claim 1, which is characterized in that the insulating layer is selected from the oxygen of high dielectric constant
Compound or amorphous state dielectric substance, with a thickness of 0~1000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811270519.6A CN109300981A (en) | 2018-10-29 | 2018-10-29 | A kind of thin film transistor (TFT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811270519.6A CN109300981A (en) | 2018-10-29 | 2018-10-29 | A kind of thin film transistor (TFT) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109300981A true CN109300981A (en) | 2019-02-01 |
Family
ID=65158984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811270519.6A Pending CN109300981A (en) | 2018-10-29 | 2018-10-29 | A kind of thin film transistor (TFT) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109300981A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577017A (en) * | 2003-07-28 | 2005-02-09 | 三菱电机株式会社 | Method for manufacturing thin film transistor array |
| US20080239217A1 (en) * | 2004-03-05 | 2008-10-02 | Kazuyoshi Inoue | Semi-Transmissive/Semi-Reflective Electrode Substrate, Method for Manufacturing Same, and Liquid Crystal Display Using Such Semi-Transmissive/Semi-Reflective Electrode Substrate |
| CN103247693A (en) * | 2012-02-13 | 2013-08-14 | 三星电子株式会社 | Thin film transistor and display panel employing the same |
| JP2015032655A (en) * | 2013-08-01 | 2015-02-16 | 出光興産株式会社 | Thin film transistor |
| CN211555893U (en) * | 2018-10-29 | 2020-09-22 | 佛山科学技术学院 | Thin film transistor |
-
2018
- 2018-10-29 CN CN201811270519.6A patent/CN109300981A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577017A (en) * | 2003-07-28 | 2005-02-09 | 三菱电机株式会社 | Method for manufacturing thin film transistor array |
| US20080239217A1 (en) * | 2004-03-05 | 2008-10-02 | Kazuyoshi Inoue | Semi-Transmissive/Semi-Reflective Electrode Substrate, Method for Manufacturing Same, and Liquid Crystal Display Using Such Semi-Transmissive/Semi-Reflective Electrode Substrate |
| CN103247693A (en) * | 2012-02-13 | 2013-08-14 | 三星电子株式会社 | Thin film transistor and display panel employing the same |
| JP2015032655A (en) * | 2013-08-01 | 2015-02-16 | 出光興産株式会社 | Thin film transistor |
| CN211555893U (en) * | 2018-10-29 | 2020-09-22 | 佛山科学技术学院 | Thin film transistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10403757B2 (en) | Top-gate self-aligned metal oxide semiconductor TFT and method of making the same | |
| CN104681629B (en) | Thin film transistor (TFT), array base palte and its respective preparation method, display device | |
| CN106129122B (en) | Oxide thin film transistor and preparation method thereof, array substrate, display device | |
| CN107424957A (en) | The preparation method of flexible TFT substrate | |
| CN107689345A (en) | TFT substrate and preparation method thereof and oled panel and preparation method thereof | |
| CN107611085B (en) | Manufacturing method of OLED (organic light emitting diode) back plate | |
| JP2009253204A (en) | Field-effect transistor using oxide semiconductor, and its manufacturing method | |
| CN106128944A (en) | The manufacture method of metal oxide thin-film transistor array base palte | |
| CN106816473A (en) | Thin film transistor (TFT) and preparation method thereof, array base palte and display device | |
| CN102244005A (en) | Oxide thin film transistor and method of fabricating the same | |
| CN104966718B (en) | The preparation method and its structure of AMOLED backboards | |
| WO2018184330A1 (en) | Display panel and display device | |
| JP2009231664A (en) | Field-effect transistor, and manufacturing method thereof | |
| US8987074B2 (en) | Oxide semiconductor thin film transistor, manufacturing method, and display device thereof | |
| CN106537567A (en) | Transistor, display device, and electronic apparatus | |
| CN102522429A (en) | Thin film transistor on basis of metal oxide and preparation method and application thereof | |
| WO2020207119A1 (en) | Display substrate and manufacturing method therefor, and display apparatus | |
| KR102188690B1 (en) | Thin film transistor, method of manufacturing the thin film transistor and flat panel display device havint the thin film transistor | |
| WO2011143887A1 (en) | Metal oxide thin film transistor and manufacturing method thereof | |
| CN106129086B (en) | TFT substrate and preparation method thereof | |
| KR20090041506A (en) | Thin film transistor and display device comprising the same | |
| CN103346089A (en) | Self-aligned double-layer channel metallic oxide thin film transistor and manufacturing method thereof | |
| CN102646715A (en) | TFT (thin film transistor) and manufacturing method thereof | |
| CN108735821A (en) | A kind of praseodymium indium-zinc oxide thin film transistor (TFT) and preparation method thereof | |
| WO2018201560A1 (en) | Metal oxide tft device and fabrication method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |