CN109300868A - A kind of insulating heat-conductive radiator structure based on potsherd - Google Patents
A kind of insulating heat-conductive radiator structure based on potsherd Download PDFInfo
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- CN109300868A CN109300868A CN201811233406.9A CN201811233406A CN109300868A CN 109300868 A CN109300868 A CN 109300868A CN 201811233406 A CN201811233406 A CN 201811233406A CN 109300868 A CN109300868 A CN 109300868A
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- potsherd
- igbt
- radiator
- swivel nut
- insulating
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 9
- 230000001965 increasing effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000012857 repacking Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
- H01L2023/4031—Packaged discrete devices, e.g. to-3 housings, diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/405—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
Abstract
This application discloses a kind of insulating heat-conductive radiator structure based on potsherd, including radiator (1) are fixed with IGBT packaging part (4) on radiator (1), further include insulating fixing piece (9)；Potsherd (2) are provided between the radiator (1) and IGBT packaging part (4)；IGBT packaging part (4), potsherd (2) are successively fixed on the radiator (1) by the insulating fixing piece (9).Increase the potsherd of heat conductive insulating between the application IGBT and radiator, and radiator and IGBT increase the design of special insulating fixing piece, enhance the insulation performance between IGBT electrode and radiator, can satisfy the application demand of more preferable dielectric strength；The additional cost for increasing insulating fixing piece on potsherd and radiator has objective economic benefit lower than the increased cost of high-grade dielectric strength institute is directly selected.
Description
Technical field
The present invention relates to rail traffic traction technique fields, and in particular to a kind of insulating heat-conductive heat dissipation knot based on potsherd
Structure.
Background technique
The application is mainly used in the power module in rail traffic traction and auxiliary product, and representative application is
Charger.Charger belongs to a kind of converter plant, is the core component of electric locomotive, railcar auxiliary system, can be column
The load of vehicle low-voltage direct provides DC power supply, while charging according to Vehicular accumulator cell characteristic to it.
Important device is IGBT in charger module, and one of link is by multiple IGBT with the use of can will be straight
Galvanic electricity inversion is alternating current.Larger heat can be generated in the IGBT course of work, need to be radiated by radiator, the one of IGBT
As installation diagram as shown in Figure 1,14 represent connecting copper bar.For the pole IGBT wiring point C (collector) and the pole E (emitter),
It needs to meet corresponding class of insulation requirement with radiator, is DC1500V, the pole C as metro project requires input terminal operating voltage
Dielectric strength reaches AC5500V between the pole E and radiator.The specification for being typically chosen IGBT in this case is (C grades of 3.3V
The maximum voltage that can bear between the pole E), the dielectric strength between electrode and its substrate is higher than AC5500V, meets product
Application operating condition.
Although the selection of the IGBT of high dielectric strength meets parameters of electric power requirement, but cost is very high.How low node is used
The structure of modification of the IGBT of intensity meets the job requirement of high dielectric strength, is our urgent problems.
Summary of the invention
For the deficiency in the presence of the prior art, the present invention provides a kind of, and the insulating heat-conductive heat dissipation based on potsherd is tied
Structure solves the problems, such as the IGBT enhancing dielectric strength of low dielectric strength under conditions of low cost.To achieve the above object, originally
Invention uses the following technical solution:
A kind of insulating heat-conductive radiator structure based on potsherd, including radiator are fixed with IGBT packaging part on radiator,
It further include insulating fixing piece；Potsherd is provided between the radiator and IGBT packaging part；The insulating fixing piece successively will
IGBT packaging part, potsherd are fixed on the radiator.
Further, the IGBT packaging part includes the IGBT substrate of bottom setting, and IGBT substrate connects with potsherd
The face of touching is arcwall face, is convex to the potsherd in the middle part of arcwall face.
Further, insulating fixing piece includes the groove opened up on a heat sink, and metal swivel nut, metal are provided in groove
It is provided with structure gum cover between swivel nut and groove, is connected with screw in metal swivel nut；The screw and metal swivel nut cooperate
Successively the IGBT packaging part and potsherd are fixed on radiator；
Further, through-hole is offered on the potsherd, special metal gasket is provided in through-hole, the screw is successively
It is fixed after IGBT substrate and special metal gasket with the cooperation of metal swivel nut.
Further, the thickness of special metal gasket is greater than the thickness of potsherd.
Further, the screw is additionally provided with spring washer and plain cushion on the screw rod of stub end.
Further, the IGBT packaging part further includes encapsulating shell, is provided in encapsulating shell and covers copper ceramic substrate, covers copper pottery
Silicon wafer is provided on porcelain substrate；The copper ceramic substrate that covers is arranged in the IGBT substrate, and the encapsulating shell is fixed on described
In IGBT substrate；The pole C and the pole E of the silicon wafer lead to the outer surface of encapsulating shell with conductor respectively.
Compared with the prior art, the invention has the following beneficial effects:
1, increase the potsherd of heat conductive insulating between the application IGBT and radiator, and radiator and IGBT increase it is special
The design of insulating fixing piece enhances the insulation performance between IGBT electrode and radiator, can satisfy more preferable dielectric strength
Application demand；The additional cost for increasing insulating fixing piece on potsherd and radiator, which is lower than, directly selects high-grade dielectric strength institute
Increased cost has objective economic benefit.
2, the substrate of IGBT, screw, spring washer, plain cushion, metal swivel nut, radiator body are conductor；Potsherd, structure
Glue is insulator；Potsherd and radiator body or good heat carrier simultaneously.The heat that IGBT work generates passes to first
Potsherd, then potsherd passes to radiator body again, and radiator is being transmitted to extraneous ring by air-cooled or water-cooling pattern
In border.It is such to design the heat-sinking capability for having ensured IGBT.
3, bolt bearing is provided with special metal gasket, and thickness is slightly higher than potsherd thickness, so that tools for bolts ' pretension
The power overwhelming majority is undertaken by special metal gasket, to effectively avoid potsherd by pressure break.
4, for prominent arcuate structure after fixing bolt is tightened, potsherd can be by IGBT substrate among IGBT substrate bottom surface
Middle section compresses, so that the bolt pretightening overwhelming majority is undertaken by special metal gasket, not will lead to potsherd can not be pressed
Tight situation occurs.
Detailed description of the invention
Fig. 1 is the general installation diagram of IGBT；
Fig. 2 is IGBT component inverter figure；
Fig. 3 is the part explosive view of the application；
Fig. 4 is the sectional view of the application；
Fig. 5 is the enlarged drawing of A in Fig. 4；
Fig. 6 is the structure chart that IGBT substrate bottom surface is arc.
Specific embodiment
Scheme is described further now in conjunction with attached drawing.
Implementation column 1
As shown in figures 3 to 6, a kind of insulating heat-conductive radiator structure based on potsherd, including radiator 1, on radiator 1
It is fixed with IGBT packaging part 4, further includes insulating fixing piece 9；Potsherd is provided between the radiator 1 and IGBT packaging part 4
2；IGBT packaging part 4, potsherd 2 are successively fixed on the radiator 1 by the insulating fixing piece 9.
The IGBT packaging part 4 includes the IGBT substrate 10 of bottom setting, and IGBT substrate 10 and potsherd 2 are in contact
Face is arcwall face 14, and the middle part of arcwall face 14 is convex to the potsherd 2；The height of projection of arcwall face 14 is 100 micron -200 micro-
Rice.
Insulating fixing piece 9 includes the groove being provided on radiator 1, is provided with metal swivel nut 1-3, metal swivel nut in groove
It is provided with structure gum cover 1-2 between 1-3 and groove, is connected with screw 5 in metal swivel nut 1-3；The screw 5 and metal swivel nut 1-
3, which cooperate, is successively fixed on the IGBT packaging part 4 and potsherd 2 on radiator 1.
The screw 5 is additionally provided with spring washer 6 and plain cushion 7 on the screw rod of stub end.
The IGBT packaging part 4 further includes encapsulating shell, is provided in encapsulating shell and covers copper ceramic substrate 12, covers copper ceramic substrate
Silicon wafer 11 is provided on 12；The copper ceramic substrate 12 that covers is arranged in the IGBT substrate 10, and the encapsulating shell is fixed on institute
It states in IGBT substrate 10；The pole C and the pole E of the silicon wafer 11 lead to the outer surface of encapsulating shell with conductor respectively.
Embodiment 2
As shown in figures 3 to 6, a kind of insulating heat-conductive radiator structure based on potsherd, including radiator 1, on radiator 1
It is fixed with IGBT packaging part 4, further includes insulating fixing piece 9；Potsherd is provided between the radiator 1 and IGBT packaging part 4
2；IGBT packaging part 4, potsherd 2 are successively fixed on the radiator 1 by the insulating fixing piece 9.
The IGBT packaging part 4 includes the IGBT substrate 10 of bottom setting, and IGBT substrate 10 and potsherd 2 are in contact
Face is arcwall face 14, and the middle part of arcwall face 14 is convex to the potsherd 2.In order to increase heat transfer efficiency, in IGBT substrate 10 and pottery
Between tile 2, heat conduction silicone 8 is provided between potsherd 2 and radiator 1.
Insulating fixing piece 9 includes the groove being provided on radiator 1, is provided with metal swivel nut 1-3, metal swivel nut in groove
It is provided with structure gum cover 1-2 between 1-3 and groove, is connected with screw 5 in metal swivel nut 1-3；It is solid using insulation system glue sticking
Fixed metal swivel nut is to form structure gum cover 1-2.The structure had not only realized the effect that is mechanically fixed of IGBT, but also the IGBT solved
The Insulation Problems of fixing bolt.
Through-hole is offered on the potsherd 2, special metal gasket 3 is provided in through-hole, and the screw 5 sequentially passes through
It is fixed after IGBT substrate 10 and special metal gasket 3 with metal swivel nut 1-3 cooperation.
The thickness of special metal gasket 3 is greater than the thickness of potsherd 2；The thickness and 2 thickness of potsherd of special metal gasket 3
Difference is preferable over 40 microns -80 microns.
The screw 5 is additionally provided with spring washer 6 and plain cushion 7 on the screw rod of stub end.
The IGBT packaging part 4 further includes encapsulating shell, is provided in encapsulating shell and covers copper ceramic substrate 12, covers copper ceramic substrate
Silicon wafer 11 is provided on 12；The copper ceramic substrate 12 that covers is arranged in the IGBT substrate 10, and the encapsulating shell is fixed on institute
It states in IGBT substrate 10；The pole C and the pole E of the silicon wafer 11 lead to the outer surface of encapsulating shell with conductor respectively.
In order to increase heat transfer efficiency, between IGBT substrate 10 and potsherd 2, it is provided between potsherd 2 and radiator 1
Heat conduction silicone 8.
Embodiment 3
On the basis of embodiment 2, the IGBT that dielectric strength is 1700V is subjected to repacking utilization, electrode (pole C and E
Pole) and radiator between dielectric strength determined by device self structure, that is to say, that electrode (pole C and the pole E) and radiator it
Between dielectric strength be equal to electrode (pole C and the pole E) and IGBT substrate know between dielectric strength, dielectric strength is generally
4kV is what there is no problem if being applied to the lower occasion of dielectric strength requirement.But for certain dielectric strength requirements compared with
High occasion, such as subway charging machine equipment, it is desirable that dielectric strength 5.5kV will be not suitable for.
To guarantee that IGBT that dielectric strength is 1700V can satisfy the dielectric strength requirement of higher level, this programme exists
Between IGBT and radiator increase heat conductive insulating potsherd, and on radiator the fixing screwed hole position of IGBT increase it is special
Insulating Design.
Potsherd solves the problems, such as that (potsherd is good heat conduction material to the heat conductive insulating between IGBT and radiator substantially first
Material and insulating materials), but since IGBT substrate is metal (generally copper) conductor, fixing bolt is also metallic conductor, if
Bolt bearing is without additional insulating Design, then IGBT substrate is still conducting by bolt and metal heat sink.For solution
The certainly Insulation Problems of bolt are provided through fixed metal swivel nut the consolidating as IGBT of insulation system glue sticking on a heat sink
Fixed point.The good insulation between IGBT substrate and radiator may be implemented by the design, to enhance IGBT electrode and dissipate
Insulation performance between hot device meets the application demand for being 5.5kV compared with high dielectric strength.
Since potsherd belongs to fragile material, the IGBT fixed position of radiator due to be multiple material composite construction,
May there is a situation where flatness foot, when installing IGBT bolt, since the effect of the pretightning force of bolt may result in pottery
Tile is provided with special metal gasket by pressure break, therefore in bolt bearing, and thickness is slightly higher than potsherd thickness, so that spiral shell
The bolt pretightning force overwhelming majority is undertaken by special metal gasket, to effectively avoid potsherd by pressure break.
Although in the bearing of IGBT, special gasket is slightly higher than potsherd thickness, but not causes potsherd can not be by
The case where compression, occurs, because IGBT substrate itself design structure is the form of intermediate prominent arcuate structure, fixing bolt is screwed
Next, potsherd can be compressed by the middle section of IGBT substrate.
IGBT described in this case is not limited only to a kind of this device of IGBT, applies also for other power devices, such as high-power
Diode, resistance.Application is also not limited to charging machine equipment, can also be applied to traction invertor, subordinate inverter etc..
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the scope of the claims of invention.
Claims (7)
1. a kind of insulating heat-conductive radiator structure based on potsherd, including radiator (1), IGBT envelope is fixed on radiator (1)
Piece installing (4), which is characterized in that further include insulating fixing piece (9)；It is provided between the radiator (1) and IGBT packaging part (4)
Potsherd (2)；IGBT packaging part (4), potsherd (2) are successively fixed on the radiator (1) by the insulating fixing piece (9).
2. a kind of insulating heat-conductive radiator structure based on potsherd as described in claim 1, which is characterized in that the IGBT encapsulation
Part (4) includes the IGBT substrate (10) of bottom setting, and IGBT substrate (10) is arcwall face with the face of potsherd (2) being in contact
(14), the potsherd (2) are convex in the middle part of arcwall face (14).
3. a kind of insulating heat-conductive radiator structure based on potsherd as described in claim 1, which is characterized in that insulating fixing piece
(9) include the groove being provided on radiator (1), be provided with metal swivel nut (1-3) in groove, metal swivel nut (1-3) and groove
Between be provided with structure gum cover (1-2), is connected with screw (5) in metal swivel nut (1-3)；The screw (5) and metal swivel nut (1-
3) it cooperates and successively the IGBT packaging part (4) and potsherd (2) is fixed on radiator (1).
4. a kind of insulating heat-conductive radiator structure based on potsherd as claimed in claim 2, which is characterized in that insulating fixing piece
(9) include the groove being provided on radiator (1), be provided with metal swivel nut (1-3) in groove, metal swivel nut (1-3) and groove
Between be provided with structure gum cover (1-2), is connected with screw (5) in metal swivel nut (1-3)；
Through-hole is offered on the potsherd (2), is provided in through-hole special metal gasket (3), the screw (5) sequentially passes through
IGBT substrate (10) and special metal gasket (3) are fixed with metal swivel nut (1-3) cooperation afterwards.
5. a kind of insulating heat-conductive radiator structure based on potsherd as claimed in claim 4, which is characterized in that special metal gasket
(3) thickness is greater than the thickness of potsherd (2).
6. such as a kind of insulating heat-conductive radiator structure based on potsherd as claimed in claim 3 to 5, which is characterized in that described
Screw (5) is additionally provided with spring washer (6) and plain cushion (7) on the screw rod of stub end.
7. a kind of insulating heat-conductive radiator structure based on potsherd as described in claim 2 or 4 or 5, which is characterized in that described
IGBT packaging part (4) further includes encapsulating shell, is provided in encapsulating shell and covers copper ceramic substrate (12), covers and sets on copper ceramic substrate (12)
It is equipped with silicon wafer (11)；Described cover copper ceramic substrate (12) are arranged on the IGBT substrate (10), and the encapsulating shell is fixed on institute
It states on IGBT substrate (10)；The pole C and the pole E of the silicon wafer (11) lead to the outer surface of encapsulating shell with conductor respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233406.9A CN109300868A (en) | 2018-10-23 | 2018-10-23 | A kind of insulating heat-conductive radiator structure based on potsherd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233406.9A CN109300868A (en) | 2018-10-23 | 2018-10-23 | A kind of insulating heat-conductive radiator structure based on potsherd |
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| Publication Number | Publication Date |
|---|---|
| CN109300868A true CN109300868A (en) | 2019-02-01 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811233406.9A Pending CN109300868A (en) | 2018-10-23 | 2018-10-23 | A kind of insulating heat-conductive radiator structure based on potsherd |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979896A (en) * | 2019-03-07 | 2019-07-05 | 浙江叶尼塞电气有限公司 | A kind of completely new IGBT module |
| CN110379783A (en) * | 2018-07-09 | 2019-10-25 | 株洲中车奇宏散热技术有限公司 | Promote the method and structure of the insulation of semiconductor devices opposite heat sink and heat dissipation performance |
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| US20120182691A1 (en) * | 2011-01-18 | 2012-07-19 | Chicony Power Technology Co., Ltd. | Integrated device of heat dissipation unit and package component and a fastening structure for the same |
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| CN208970502U (en) * | 2018-10-23 | 2019-06-11 | 重庆中车四方所智能装备技术有限公司 | A kind of insulating heat-conductive radiator structure based on potsherd |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379783A (en) * | 2018-07-09 | 2019-10-25 | 株洲中车奇宏散热技术有限公司 | Promote the method and structure of the insulation of semiconductor devices opposite heat sink and heat dissipation performance |
| CN110379783B (en) * | 2018-07-09 | 2021-12-14 | 株洲中车奇宏散热技术有限公司 | Method and structure for improving insulation and heat dissipation performance of semiconductor device relative to radiator |
| CN109979896A (en) * | 2019-03-07 | 2019-07-05 | 浙江叶尼塞电气有限公司 | A kind of completely new IGBT module |
| CN109979896B (en) * | 2019-03-07 | 2021-07-09 | 浙江叶尼塞电气有限公司 | Brand-new IGBT module |
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