CN109300861B - Silicon oxide-based communication substrate and preparation process and application thereof - Google Patents
Silicon oxide-based communication substrate and preparation process and application thereof Download PDFInfo
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- CN109300861B CN109300861B CN201811147385.9A CN201811147385A CN109300861B CN 109300861 B CN109300861 B CN 109300861B CN 201811147385 A CN201811147385 A CN 201811147385A CN 109300861 B CN109300861 B CN 109300861B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
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Abstract
A preparation process of a silicon oxide-based communication substrate comprises the following preparation steps: the method comprises the following steps: weighing 5-10 parts by mass of a binder, dispersing the binder in a solvent, adding 80-90 parts by mass of silicon oxide, and fully and uniformly stirring by using a vacuum planetary stirrer to obtain composite slurry; step two: coating the conductive composite slurry on a polytetrafluoroethylene membrane by using a transfer coating machine, keeping the thickness of the double-sided coating consistent with that of the adopted polytetrafluoroethylene membrane, and adopting a grading drying process; step three: and cutting and laminating the dried composite film according to a specified size, and carrying out hot-pressing treatment on the laminated composite film. Compared with the prior art, the invention achieves the technical effects that: the composite membrane prepared by the method has the advantages of simple preparation process, suitability for batch production and excellent dielectric property.
Description
Technical Field
The invention relates to the field of communication, relates to a silicon oxide-based communication substrate, and also relates to a preparation process of the silicon oxide-based communication substrate, in particular to application of the silicon oxide-based communication substrate.
Background
Silicon is a very common element, but it rarely occurs in nature in the form of a simple substance, but is widely present in rocks, gravel, dust in the form of complex silicates or silica. In the crust, silicon is the second most abundant element, constituting 26.4% of the total crust mass, second only to the first oxygen (49.4%). With the development of semiconductor industry, the purification and application of silicon bring human beings to the silicon era and become civilized symbols of modern human society. The semiconductor silicon material has the advantages of high thermal conductivity, small thermal mismatch with an LED chip, mature processing technology and the like, is very suitable for being used as a heat dissipation substrate of a high-power LED, and is gradually introduced into the field of LEDs from the semiconductor industry. The application of the DPC process to the silicon substrate in the future is one of the future trends of preparing high-power LED products, and the mature silicon process and the film process are fully utilized to manufacture the circuit with high precision and compact wiring, so that high-density packaging is realized; meanwhile, the high thermal conductivity and small warpage of the silicon material are fully utilized, and CTE matching is met. The prior production process of the silicon oxide substrate mainly comprises dry pressing forming (rough surface, non-fluctuation density and non-uniform pore size), slip casting forming (only suitable for batch operation and low slip casting efficiency), extrusion forming and pressing (non-uniform length/side shrinkage, easy warping and large abrasion), screen printing (suitable for single-layer and multi-layer structure preferential thick films), tape casting forming and the like, wherein the tape casting forming process is widely adopted due to the advantages of continuous production of water-based and organic-based components, smooth surface, small batch and large batch, wide thickness range (100 plus 1500um) and the like.
Disclosure of Invention
The purpose of the invention is: aiming at the defects, the silicon oxide-based communication substrate and the preparation process and the application thereof are provided.
In order to achieve the purpose, the invention adopts the technical scheme that:
a silicon oxide-based communication substrate comprises a composite slurry coated on a polytetrafluoroethylene membrane, wherein the composite slurry comprises the following raw materials: 5-10 parts of binder, 80-90 parts of silicon oxide and solvent, wherein the solvent comprises the following components in parts by weight: .
The binder comprises one or more of polyvinylidene fluoride, polytetrafluoroethylene and polyimide.
The solvent is one of N-methyl pyrrolidone and deionized water.
A preparation process of a silicon oxide-based communication substrate comprises the following preparation steps: the method comprises the following steps: weighing 5-10 parts by mass of a binder, dispersing the binder in a solvent, adding 80-90 parts by mass of silicon oxide, and fully and uniformly stirring by using a vacuum planetary stirrer to obtain composite slurry;
step two: coating the composite slurry on a polytetrafluoroethylene membrane by adopting a transfer coating machine, keeping the thickness of the double-sided coating consistent with that of the adopted polytetrafluoroethylene membrane, adopting a graded drying process, wherein the primary drying temperature is 90-100 ℃, the secondary drying temperature is 100-;
step three: and cutting the dried composite film according to the specified size, laminating, and performing hot-pressing treatment on the laminated composite film at the temperature of 200-300 ℃ for 15-30min to compound the composite film into the silicon dioxide substrate.
The application of the silicon oxide-based communication substrate is characterized in that the silicon oxide-based communication substrate is applied to the communication substrate, the dielectric constant is 3.5 +/-0.05 @10G, and the loss factor is 0.0012 +/-0.0003 @ 10' HGHz.
Compared with the prior art, the invention achieves the technical effects that: the composite membrane prepared by the method has the advantages of simple preparation process, suitability for batch production and excellent dielectric property.
Detailed Description
The invention is further described below with reference to the following examples:
the first embodiment is as follows:
a silicon oxide-based communication substrate comprises a composite slurry coated on a polytetrafluoroethylene membrane, wherein the composite slurry comprises the following raw materials: polyvinylidene fluoride, silicon oxide and N-methyl pyrrolidone solvent, wherein the content of the polyvinylidene fluoride is 5 parts, the content of the silicon oxide is 80 parts, and the content of the N-methyl pyrrolidone solvent is 40%.
A preparation process of a silicon oxide-based communication substrate comprises the following preparation steps: the method comprises the following steps: weighing 5 parts by mass of polyvinylidene fluoride, dispersing the polyvinylidene fluoride in an N-methyl pyrrolidone solvent, adding 80 parts by mass of silicon oxide, and fully and uniformly stirring the mixture by using a vacuum planetary stirrer to obtain composite slurry;
step two: coating the composite slurry on a polytetrafluoroethylene membrane by using a transfer coater, keeping the thickness of the double-sided coating consistent with that of the adopted polytetrafluoroethylene membrane, adopting a grading drying process, wherein the primary drying temperature is 90 ℃, the secondary drying temperature is 100 ℃, the running speed is 800mm/min, and drying the wound composite membrane for 12 hours in a vacuum baking oven at the temperature of 90 ℃;
step three: and cutting and laminating the dried composite film according to the specified size, and performing hot-pressing treatment on the laminated composite film at the temperature of 200 ℃ for 30min to compound the laminated composite film into a silicon dioxide substrate.
The application of the silicon oxide-based communication substrate is characterized in that the silicon oxide-based communication substrate is applied to the communication substrate, the dielectric constant is 3.5 +/-0.05 @10G, and the loss factor is 0.0012 +/-0.0003 @ 10' HGHz.
Compared with the prior art, the invention achieves the technical effects that: the composite membrane prepared by the method has the advantages of simple preparation process, suitability for batch production and excellent dielectric property.
Example two:
a silicon oxide-based communication substrate comprises a composite slurry coated on a polytetrafluoroethylene membrane, wherein the composite slurry comprises the following raw materials: polytetrafluoroethylene, silicon oxide and deionized water solvent, wherein the content of polytetrafluoroethylene is 7 parts, the content of silicon oxide is 85 parts, and the content of deionized water solvent is 50%: .
A preparation process of a silicon oxide-based communication substrate comprises the following preparation steps: the method comprises the following steps: weighing 7 parts by mass of polytetrafluoroethylene, dispersing the polytetrafluoroethylene in a deionized water solvent, adding 85 parts by mass of silicon oxide, and fully and uniformly stirring the mixture by using a vacuum planetary stirrer to obtain composite slurry;
step two: coating the composite slurry on a polytetrafluoroethylene membrane by using a transfer coater, keeping the thickness of the double-sided coating consistent with that of the adopted polytetrafluoroethylene membrane, adopting a grading drying process, wherein the primary drying temperature is 95 ℃, the secondary drying temperature is 110 ℃, the running speed is 900mm/min, and drying the wound composite membrane for 10 hours in a vacuum baking oven at 100 ℃;
step three: and cutting and laminating the dried composite film according to the specified size, and performing hot-pressing treatment on the laminated composite film at the temperature of 250 ℃ for 22min to compound the laminated composite film into a silicon dioxide substrate.
The application of the silicon oxide-based communication substrate is characterized in that the silicon oxide-based communication substrate is applied to the communication substrate, the dielectric constant is 3.5 +/-0.05 @10G, and the loss factor is 0.0012 +/-0.0003 @ 10' HGHz.
Compared with the prior art, the invention achieves the technical effects that: the composite membrane prepared by the method has the advantages of simple preparation process, suitability for batch production and excellent dielectric property.
Example three:
a silicon oxide-based communication substrate comprises a composite slurry coated on a polytetrafluoroethylene membrane, wherein the composite slurry comprises the following raw materials: polyimide, silicon oxide and N-methyl pyrrolidone solvent, wherein the content of the polyimide is 10 parts, the content of the silicon oxide is 90 parts, and the content of the N-methyl pyrrolidone solvent is 60%: .
A preparation process of a silicon oxide-based communication substrate comprises the following preparation steps: the method comprises the following steps: weighing 10 parts by mass of polyimide, dispersing the polyimide in an N-methylpyrrolidone solvent, adding 90 parts by mass of silicon oxide, and fully and uniformly stirring the mixture by using a vacuum planetary stirrer to obtain composite slurry;
step two: coating the composite slurry on a polytetrafluoroethylene membrane by using a transfer coater, keeping the thickness of the double-sided coating consistent with that of the adopted polytetrafluoroethylene membrane, adopting a grading drying process, wherein the primary drying temperature is 100 ℃, the secondary drying temperature is 120 ℃, the running speed is 1000mm/min, and drying the wound composite membrane for 8 hours in a vacuum baking oven at 110 ℃;
step three: and cutting and laminating the dried composite film according to the specified size, and performing hot-pressing treatment on the laminated composite film at the temperature of 300 ℃ for 15min to compound the laminated composite film into a silicon dioxide substrate.
The application of the silicon oxide-based communication substrate is characterized in that the silicon oxide-based communication substrate is applied to the communication substrate, the dielectric constant is 3.5 +/-0.05 @10G, and the loss factor is 0.0012 +/-0.0003 @ 10' HGHz.
Compared with the prior art, the invention achieves the technical effects that: the composite membrane prepared by the method has the advantages of simple preparation process, suitability for batch production and excellent dielectric property.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (2)
1. A preparation process of a silicon oxide-based communication substrate is characterized by comprising the following steps: the preparation method comprises the following preparation steps: the method comprises the following steps: weighing 5-10 parts by mass of a binder, dispersing the binder in a solvent, and adding 80-90 parts by mass of silicon oxide, wherein the solvent content is as follows: 40-60 percent;
fully and uniformly stirring by using a vacuum planetary stirrer to obtain composite slurry;
step two: coating the composite slurry on a polytetrafluoroethylene membrane by adopting a transfer coating machine, keeping the thickness of the double-sided coating consistent with that of the adopted polytetrafluoroethylene membrane, adopting a graded drying process, wherein the primary drying temperature is 90-100 ℃, the secondary drying temperature is 100-;
step three: cutting and laminating the dried composite film according to the specified size, and performing hot-pressing treatment on the laminated composite film at the temperature of 200 ℃ and 300 ℃ for 15-30min to compound the composite film into a silicon dioxide substrate;
the binder comprises one or more of polyvinylidene fluoride, polytetrafluoroethylene and polyimide.
2. The process of claim 1, wherein: the solvent is one of N-methyl pyrrolidone and deionized water.
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| CN1203206A (en) * | 1998-07-24 | 1998-12-30 | 清华大学 | Doctor blade process for preparing ceramic base plate |
| CN102167578A (en) * | 2010-12-17 | 2011-08-31 | 深圳顺络电子股份有限公司 | Medium and low-dielectric constant low-temperature cofired ceramic material and preparation method thereof |
| CN104183805A (en) * | 2013-05-25 | 2014-12-03 | 湖南省正源储能材料与器件研究所 | Preparation method for ceramic coating separator |
| CN106558664A (en) * | 2015-09-25 | 2017-04-05 | 比亚迪股份有限公司 | A kind of diaphragm for lithium ion battery and preparation method thereof and lithium ion battery |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5645136B2 (en) * | 2009-03-26 | 2014-12-24 | 日立金属株式会社 | Dielectric porcelain composition, multilayer dielectric substrate, electronic component, and method for producing dielectric porcelain composition |
| CN103811702B (en) * | 2014-02-12 | 2016-02-10 | 佛山市金辉高科光电材料有限公司 | A kind of new ceramics coating of polyolefins composite membrane and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1203206A (en) * | 1998-07-24 | 1998-12-30 | 清华大学 | Doctor blade process for preparing ceramic base plate |
| CN102167578A (en) * | 2010-12-17 | 2011-08-31 | 深圳顺络电子股份有限公司 | Medium and low-dielectric constant low-temperature cofired ceramic material and preparation method thereof |
| CN104183805A (en) * | 2013-05-25 | 2014-12-03 | 湖南省正源储能材料与器件研究所 | Preparation method for ceramic coating separator |
| CN106558664A (en) * | 2015-09-25 | 2017-04-05 | 比亚迪股份有限公司 | A kind of diaphragm for lithium ion battery and preparation method thereof and lithium ion battery |
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