CN109285918A - Preparation process of solar cell - Google Patents
Preparation process of solar cell Download PDFInfo
- Publication number
- CN109285918A CN109285918A CN201811025440.7A CN201811025440A CN109285918A CN 109285918 A CN109285918 A CN 109285918A CN 201811025440 A CN201811025440 A CN 201811025440A CN 109285918 A CN109285918 A CN 109285918A
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- laser scribing
- doping
- region
- silicon wafer
- preparation process
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000007650 screen-printing Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 13
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 238000007639 printing Methods 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation process of a solar cell, which comprises the steps of carrying out laser scribing on a silicon wafer to form a front electrode pattern, then carrying out diffusion doping and subsequent procedures, wherein laser scribing is carried out on a region printed with a front grid line in advance, the surface area of a laser scribing region is larger than that of a non-laser scribing region when diffusion doping is carried out, and the doping depth of the laser scribing region is larger than that of the non-laser scribing region, so that the doping amount of the laser scribing region is larger than that of the non-laser scribing region, and the doping amount of the non-laser scribing region is relatively lower, therefore, after the front grid line printing is carried out through screen printing, heavy doping is realized in the grid line region, shallow doping is realized in the non-grid line region, and higher filling factor FF and short-circuit current.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing more particularly to a kind of preparation processes of solar battery.
Background technique
Solar energy is a kind of clean, efficient and never-exhausted new energy, is important one of renewable energy.With too
The development of positive energy industry, more clients and solar battery manufacturer increasingly pay attention to the production of high efficiency solar cell.
In recent years, the manufacturing process of high performance solar batteries is had conducted extensive research both at home and abroad, is had as the result is shown: starched in front gate line
Expect that overlay area carries out heavy doping diffusion, higher fill factor FF can be obtained, to obtain higher battery conversion efficiency.
Conventional diffusion is uniformly to spread, and diffusing, doping amount, which becomes larger, will lead to the compound increase of non-frontal grid line printing zone, therefore can lead
Cause the reduction of battery conversion efficiency.Fill factor FF and short circuit current Isc are very difficult to balance.
Therefore, it is necessary to be improved to solar cell fabrication process.
Summary of the invention
The invention proposes a kind of preparation process of solar battery, to reduce compound same of non-frontal grid region
When, improve the contact in front gate line region.
To solve the above-mentioned problems, the invention provides the following technical scheme:
A kind of preparation process of solar battery, comprising the following steps:
S1: carrying out laser scribing to silicon wafer, and the figure that wherein laser scribing is formed is identical as silk-screen printing positive electrode pattern,
The silk-screen printing positive electrode pattern includes front gate line figure；
S2: being diffused doping to the silicon wafer after laser scribing, forms heavy doping, Qi Taqu in front gate line graphics field
Domain forms shallow doping；
S3: the silicon wafer after diffusing, doping is successively performed etching, plated film；
S4: carrying out silk-screen printing, and the front gate line set that wherein silk-screen printing is formed is imprinted on the figure of laser scribing formation.
In one embodiment of the invention, the silicon wafer that the laser scribing uses is the silicon after original silicon chip or making herbs into wool
Piece.
In one embodiment of the invention, the width of the grid line for the figure that laser scribing is formed is 20 micron -200 micro-
Rice.
In one embodiment of the invention, the depth of the grid line for the figure that laser scribing is formed is not more than 2 microns.
The present invention due to using the technology described above, is allowed to compared with prior art, have the advantages that following and actively imitate
Fruit:
(1) present invention by first to silicon wafer carry out laser scribing formed front electrode figure again be diffused doping and it is subsequent
Program, due to carrying out laser scribing, when being diffused doping, laser scribing region in the region that front gate line prints in advance
Surface area is greater than the area of non-laser scribe area, and the doping depth in laser scribing region is greater than non-laser scribe area, therefore
The doping in laser scribing region is greater than the doping of non-laser scribe area, the doping of non-laser scribe area relatively low one
A bit, therefore after the printing of silk-screen printing front gate line, grid region realizes heavy doping, and non-grid region, which realizes, shallowly mixes
It is miscellaneous, higher fill factor FF and short circuit current Isc can be obtained simultaneously.
Detailed description of the invention
Fig. 1 is the flow diagram of the preparation process of solar battery provided in an embodiment of the present invention.
Specific embodiment
Make below in conjunction with preparation process of the drawings and specific embodiments to solar battery proposed by the present invention further detailed
It describes in detail bright.According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted that attached drawing is equal
Using very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating the embodiment of the present invention
Purpose.
Referring to FIG. 1, as shown in Figure 1, the preparation process of solar battery provided in an embodiment of the present invention includes following step
It is rapid:
S1: carrying out laser scribing to silicon wafer, and the figure that wherein laser scribing is formed is identical as silk-screen printing positive electrode pattern,
The silk-screen printing positive electrode pattern includes front gate line figure.
Wherein, the silicon wafer that the laser scribing uses is the silicon wafer after original silicon chip or making herbs into wool.
S2: being diffused doping to the silicon wafer after laser scribing, forms heavy doping, Qi Taqu in front gate line graphics field
Domain forms shallow doping.
Wherein, the width of the grid line for the figure that laser scribing is formed is 20 microns -200 microns.The figure that laser scribing is formed
The depth of the grid line of shape is not more than 2 microns.
S3: the silicon wafer after diffusing, doping is successively performed etching, plated film；
S4: carrying out silk-screen printing, and the front gate line set that wherein silk-screen printing is formed is imprinted on the figure of laser scribing formation.
It is further described with reference to embodiments.
Embodiment 1
The preparation process of solar battery provided in this embodiment comprises the steps of:
(1) it chooses 156 × 156mm crystalline silicon wafer and carries out laser scribing, the width of laser scribing figure is 30 microns, is swashed
The depth of light scribing line is 0.3 micron；
(2) crystalline silicon wafer Jing Guo laser scribing carries out making herbs into wool, diffusion, etching, plated film；
(3) crystalline silicon wafer after plated film carries out silk-screen printing, and wherein the front gate line of silk-screen printing is covered on laser scribing
Figure on.
(4) solar battery sheet is prepared through follow-up sintering technique again, is found by test, the sun that the present invention obtains
The photoelectric conversion efficiency of energy cell piece increases, and specific data are shown in Table 1.
Table 1
| Technique | Uoc | Isc | FF | Ncell |
| Conventional crystal silicon battery technique | 0 | 0 | 0 | 0 |
| Laser scribing battery process | 0.2mV | 30mA | 0.5 | 0.19% |
As can be seen from Table 1: the cell piece efficiency gain 0.19% of laser scribe method preparation, mainly due to short-circuit electricity
The gain of stream and fill factor.
Embodiment 2
The preparation process of solar battery provided in this embodiment comprises the steps of:
(1) it chooses 156.75 × 156.75mm crystalline silicon wafer and carries out laser scribing, the width of laser scribing figure is 10 micro-
Rice, the depth of laser scribing are 1 micron；
(2) crystalline silicon wafer Jing Guo laser scribing carries out making herbs into wool, diffusion, etching, plated film；
(3) crystalline silicon wafer after plated film carries out silk-screen printing, and wherein the front gate line of silk-screen printing is covered on laser scribing
Figure on.
(4) solar battery sheet is prepared through follow-up sintering technique again, is found by test, the sun that the present invention obtains
The photoelectric conversion efficiency of energy cell piece increases, and specific data are shown in Table 2.
Table 2
| Technique | Uoc | Isc | FF | Ncell |
| Conventional crystal silicon battery technique | 0 | 0 | 0 | 0 |
| Laser scribing battery process | 0.1mV | 10mA | 0.15 | 0.06% |
As can be seen from Table 2: the cell piece efficiency gain 0.06% of laser scribe method preparation, mainly due to short-circuit electricity
The gain of stream and fill factor.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (4)
1. a kind of preparation process of solar battery, which comprises the following steps:
S1: carrying out laser scribing to silicon wafer, and the figure that wherein laser scribing is formed is identical as silk-screen printing positive electrode pattern, described
Silk-screen printing positive electrode pattern includes front gate line figure；
S2: being diffused doping to the silicon wafer after laser scribing, forms heavy doping, other region shapes in front gate line graphics field
At shallow doping；
S3: the silicon wafer after diffusing, doping is successively performed etching, plated film；
S4: carrying out silk-screen printing, and the front gate line set that wherein silk-screen printing is formed is imprinted on the figure of laser scribing formation.
2. the preparation process of solar battery as described in claim 1, which is characterized in that the silicon wafer that the laser scribing uses
For the silicon wafer after original silicon chip or making herbs into wool.
3. the preparation process of solar battery as claimed in claim 1 or 2, which is characterized in that the figure that laser scribing is formed
Grid line width be 20 microns -200 microns.
4. the preparation process of solar battery as claimed in claim 3, which is characterized in that the grid for the figure that laser scribing is formed
The depth of line is not more than 2 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811025440.7A CN109285918A (en) | 2018-09-04 | 2018-09-04 | Preparation process of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811025440.7A CN109285918A (en) | 2018-09-04 | 2018-09-04 | Preparation process of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109285918A true CN109285918A (en) | 2019-01-29 |
Family
ID=65183909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811025440.7A Pending CN109285918A (en) | 2018-09-04 | 2018-09-04 | Preparation process of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109285918A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085702A (en) * | 2019-04-19 | 2019-08-02 | 通威太阳能（成都）有限公司 | A kind of high-efficiency photovoltaic battery production method that laser cutting loss is effectively reduced |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533871A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| CN101783374A (en) * | 2010-01-25 | 2010-07-21 | 宁波太阳能电源有限公司 | Method for manufacturing silicon solar cell |
| CN101866984A (en) * | 2010-05-18 | 2010-10-20 | 常州亿晶光电科技有限公司 | Method for selectively doping emitting stage on surface of crystalline silicon cell film |
| CN101969082A (en) * | 2010-04-20 | 2011-02-09 | 常州天合光能有限公司 | Process for manufacturing solar cell by twice screen printing and grooving |
| CN102800757A (en) * | 2012-08-28 | 2012-11-28 | 英利集团有限公司 | N-type solar cell and manufacturing process thereof |
-
2018
- 2018-09-04 CN CN201811025440.7A patent/CN109285918A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533871A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| CN101783374A (en) * | 2010-01-25 | 2010-07-21 | 宁波太阳能电源有限公司 | Method for manufacturing silicon solar cell |
| CN101969082A (en) * | 2010-04-20 | 2011-02-09 | 常州天合光能有限公司 | Process for manufacturing solar cell by twice screen printing and grooving |
| CN101866984A (en) * | 2010-05-18 | 2010-10-20 | 常州亿晶光电科技有限公司 | Method for selectively doping emitting stage on surface of crystalline silicon cell film |
| CN102800757A (en) * | 2012-08-28 | 2012-11-28 | 英利集团有限公司 | N-type solar cell and manufacturing process thereof |
Non-Patent Citations (1)
| Title |
|---|
| 杨志刚 等: "《小型太阳能光伏电源实用技术》", 31 January 2009, 科学普及出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085702A (en) * | 2019-04-19 | 2019-08-02 | 通威太阳能（成都）有限公司 | A kind of high-efficiency photovoltaic battery production method that laser cutting loss is effectively reduced |
| CN110085702B (en) * | 2019-04-19 | 2021-06-01 | 通威太阳能（成都）有限公司 | Efficient photovoltaic cell manufacturing method capable of effectively reducing laser cutting loss |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191028 Address after: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co.,Ltd. Applicant after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant after: Huanghe Hydropower Development Co., Ltd. Address before: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Applicant before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant before: Huanghe Hydropower Development Co., Ltd. |
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| TA01 | Transfer of patent application right | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190129 |
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| WD01 | Invention patent application deemed withdrawn after publication |