CN109285827B - A kind of crystal circle structure and its test method - Google Patents
A kind of crystal circle structure and its test method Download PDFInfo
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- CN109285827B CN109285827B CN201811008476.4A CN201811008476A CN109285827B CN 109285827 B CN109285827 B CN 109285827B CN 201811008476 A CN201811008476 A CN 201811008476A CN 109285827 B CN109285827 B CN 109285827B
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- layer
- metal layer
- oxidation
- circle structure
- crystal circle
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- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 238000010998 test method Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 56
- 230000003647 oxidation Effects 0.000 claims abstract description 55
- 238000012360 testing method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000004411 aluminium Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 238000009279 wet oxidation reaction Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 150000002739 metals Chemical class 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Medicinal Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Food Science & Technology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of crystal circle structure and its test methods, including the substrate and epitaxial layer stacked；The epitaxial layer includes the metal layer and separate layer of Spaced setting；The advantage is that: the different metal layer of multiple layer metal content is arranged on a crystal circle structure, the oxidation data of more metal layers can be obtained simultaneously by once testing, and then obtain the various metals content oxidation data of this kind of power device, time and cost needed for greatly reducing debugging；Due to obtaining the oxidation data of more metal layers simultaneously in same oxidation environment, the uniformity of oxidation environment is improved, reduces test result error caused by the step-up error that may be present as oxidation environment, improves the accuracy of test result.
Description
Technical field
The present invention relates to semiconductor devices, and in particular to a kind of crystal circle structure and its test method.
Background technique
In IGBT, HEMT, VCSEL, the production process of great power LED constant power device, usually can all it aoxidize in wafer
Metal limit the injection of electric current, the efficiency of power device is improved with this.In scale of mass production power device, Yao Jinhang
The exploitation of oxidation technology is debugged.The exploitation debugging process of existing oxidation technology is the epitaxial wafer point using the multi-disc power device
Multiple oxidation test is not carried out, and every epitaxial wafer is equipped with the metal layer of different metal content, to obtain being somebody's turn to do for different metal content
The oxidation data of power device.There is following problems for this kind of adjustment method: this kind of adjustment method can only obtain in single debugging
A kind of oxidation data of tenor of the power device are obtained, and in the antenatal exploitation debugging process of large scale quantities, it generally requires
Tens to several hundred times tests are carried out, then are developed in debugging process herein, need to carry out test of many times and consumption tens to several hundred
The epitaxial wafer of the power device.It develops debugging cost height, and required time is long.Simultaneously because the test number (TN) for needing to carry out is more,
The step-up error of oxidation environment is likely to occur during test of many times, this will affect the accuracy of test result.
Summary of the invention
In order to solve the above-mentioned problems of the prior art, it is an object of that present invention to provide a kind of crystal circle structure and its tests
Method, the present invention can aoxidize data by once testing while obtaining multiple groups, effectively reduce the exploitation and debugging of oxidation technology
Cost improves the accuracy of test result.
A kind of crystal circle structure of the present invention, including the substrate and epitaxial layer stacked；The epitaxial layer includes between multilayer
Every the metal layer and separate layer of setting.
Preferably, the tenor of each layer metal layer is different.
Preferably, the metal layer is aluminous layer, the layer-by-layer alternation of aluminium content.
Preferably, the aluminium content change step of the metal layer is 1%.
Preferably, the metal layer is arranged seven layers, and aluminium content range is 92%-98%, farthest away from the metal layer of substrate
Aluminium content be 92%, near substrate metal layer aluminium content be 98%.
Preferably, the thickness of each layer metal layer is different.
A kind of test method for testing a kind of crystal circle structure, comprising the following steps:
S0, the metal layer side for exposing the crystal circle structure by etching；
S1, the side of each layer metal layer is aoxidized simultaneously；
S2, the oxidation depth for obtaining each layer metal layer；
S3, the oxidation rate of corresponding metal layer is obtained according to the oxidation depth of each layer metal layer.
Preferably, dry etching is used in step S0；Metal layer is aoxidized using wet oxidation in step S1.
Preferably, the wet oxidation the following steps are included:
S11, it is passed through nitrogen；
S13, it is passed through oxygen and hydrogen, lights hydrogen, each layer metal layer is aoxidized.
Preferably, 90 DEG C of water-baths are first carried out before nitrogen is passed through in the step S11；The molar ratio of the hydrogen and oxygen is small
In 2:1.
A kind of crystal circle structure of the present invention and its test method, the advantage is that, be arranged on a crystal circle structure
The different metal layer of multiple layer metal content, the oxidation data of more metal layers can be obtained by once testing simultaneously, and then are obtained
The oxidation data of the various metals content of this kind of power device, time and cost needed for greatly reducing debugging；Due to same
The oxidation data for obtaining more metal layers in one oxidation environment simultaneously, improve the uniformity of oxidation environment, reducing may deposit
The test result error as caused by oxidation environment step-up error, improve the accuracy of test result；Meanwhile institute of the present invention
The oxidation technology of the wet oxidation of use, it is reproducible, it can be used for being mass produced；Due to temperature and hydrogen and oxygen ratio
Accurate control can obtain the power device of different metal content under different oxidation environments by changing temperature and hydrogen and oxygen ratio
The oxidation rate of part, can by change oxidation environment obtain multi-group data, be further reduced oxidation technology testing time and at
This, has great practical significance for the scale volume production of power device.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of crystal circle structure of the present invention.
Fig. 2 is a kind of wet oxidation flow chart of the test method of crystal circle structure of the present invention.
Description of symbols: 100- crystal circle structure, 110- substrate, 111- doped layer, 112- separate layer, 113- metal layer,
1- mass flowmenter, 2- water bath device, 3- heat igniter, 4- boiler tube, 5- exhaust gas processing device.
Specific embodiment
Below will be by taking GaAs material as an example, in conjunction with attached drawing, statement is of the invention in detail.
Embodiment 1
HEMT and VCSEL is common power device, in its manufacturing process, need to the one layer of epitaxial layer of height containing aluminium into
Row wet-oxygen oxidation, according to the difference of its structure, the range of oxidation depth is several microns to more than ten microns and differs.In oxidation process
It is required that its oxidation depth controllable precise, and it is reproducible.In the present embodiment, the aluminium for having carried out various concentration to GaAs material is mixed
It is miscellaneous, the metal layer 113 containing aluminium of various concentration is formed, the content range of aluminium is 92%-98%.As shown in Figure 1, in the lining of GaAs
Successively growth has more metal layers 113 on bottom 110, and the aluminium content of the metal layer 113 is followed successively by along the direction far from substrate 110
98%, 97%, 96%, 95%, 94%, 93%, 92%, seven layers of metal layer 113 are formed altogether.The dosed carrier of metal layer 113,
Concentration and thickness are consistent with real power device.Its tenor in the case where the oxidation rate under certain environment is the environment
The oxidation rate of real power device.It is separated between adjacent metal 113 with the separate layer 112 that GaAs is formed.The wafer knot
Structure 100 includes the GaAs substrate stacked, and GaAs doped layer, interval is laminated with separate layer 112 and metal layer on GaAs doped layer
113.The aluminium content of metal layer 113 is successively successively decreased along the direction far from substrate 110.The preparation stream of crystal circle structure described in the present embodiment
Cheng Weixian grows one layer of GaAs doped layer on gaas substrates, the interval growth separate layer 112 and containing aluminium on GaAs doped layer
Metal layer 113, the aluminium content of metal layer 113 is followed successively by 98% along the direction of growth, 97%, 96%, 95%, 94%, 93%,
92%.The GaAs crystal circle structure of this kind of structure when being aoxidized, can simultaneously obtain aluminium content be 98%, 97%, 96%,
95%, the oxidation data of 94%, 93%, 92% metal layer 113 containing aluminium can simultaneously obtain seven groups of numbers by once testing
According to that is, primary test obtains the oxidation data of seven kinds of tenors of the real power device under identical environment.In a wafer knot
Multiple layer metal content different metal layer 113 is set on structure 100, more metal layers 113 can be obtained simultaneously by once testing
Aoxidize data, and then obtain this kind of power device various metals content oxidation data, by once test can obtain simultaneously it is more
Data needed for group, time and cost needed for greatly reducing debugging；Due to obtaining multilayer gold simultaneously in same oxidation environment
The oxidation data for belonging to layer 113, improve the uniformity of oxidation environment, reduce and that may be present are led by oxidation environment step-up error
The test result error of cause, improves the accuracy of test result.
Embodiment 2
Present inventive concept is equally applicable to the oxidation rate of the real power device of test different-thickness.When required test
When the thickness difference of real power device, the thickness of its metal layer 113, Jin Ertong can be set according to the thickness of real power device
When obtain multi-thickness metal layer 113 oxidation rate, it is same have reduce exploitation debugging cost and to improve test result quasi-
The effect of true property.
It is a kind of for testing the test method of the crystal circle structure, comprising the following steps:
Expose the side of metal layer 113 by dry etching first.Etched crystal circle structure 100 is placed on boiler tube 4
In.Then wet oxidation is carried out to crystal circle structure 100.As shown in Fig. 2, after nitrogen controls its intake by mass flowmenter 1
90 DEG C of water-baths are carried out via water bath device 2, are then passed in boiler tube 4.Hydrogen and oxygen are passed through mass flowmenter 1 respectively to control
After its intake, hydrogen completely burned is set to generate steam in boiler tube 4 by heating igniter 3, while to each layer metal layer
113 side is aoxidized.Gas after reaction is handled by exhaust gas processing device 5.Crystal circle structure 100 after oxidation is taken
Out, each 113 oxidation depth of layer metal layer is measured, the oxidation of each layer metal layer 113 is calculated by oxidation depth and oxidization time
Speed.Wherein, to aoxidize metal layer 113 sufficiently, the molar ratio of hydrogen and oxygen should be less than 2:1, and the amount of the steam of generation can
To pass through the intake of adjusting hydrogen and oxygen or be passed through ratio control.Record the aluminium content and its oxidation of each layer metal layer 113
Thus speed just obtains the oxidation rate of the real power device of various metals content.In multiple actual test, this kind of wet process
Method for oxidation it is reproducible, can be used for being mass produced；Since temperature and hydrogen and oxygen ratio accurately control, Ke Yitong
It crosses change temperature and hydrogen and oxygen ratio obtains the oxidation rate of more metal layers 113 under different oxidation environments, one can be passed through
The crystal circle structure 100 obtains multi-group data, testing time and the cost of oxidation technology is further reduced, for power device
Scale volume production has great practical significance.
For those skilled in the art, it can make other each according to the above description of the technical scheme and ideas
The corresponding change of kind and deformation, and all these changes and deformation all should belong to the protection model of the claims in the present invention
Within enclosing.
Claims (6)
1. a kind of crystal circle structure, including the substrate (110) stacked and epitaxial layer；It is characterized in that, the epitaxial layer includes multilayer
Spaced metal layer (113) and separate layer (112)；The tenor of each layer metal layer (113) is different；The gold
Belonging to layer (113) is aluminous layer, the layer-by-layer alternation of aluminium content；The aluminium content change step of the metal layer (113) is 1%；It is described
Metal layer (113) is arranged seven layers, and aluminium content range is 92%-98%, and the aluminium content farthest away from the metal layer of substrate (110) is
92%, the aluminium content near the metal layer of substrate (110) is 98%.
2. a kind of crystal circle structure according to claim 1, which is characterized in that the thickness of each layer metal layer (113) is not
Together.
3. a kind of test method for testing any crystal circle structure of claim 1-2, which comprises the following steps:
S0, metal layer (113) side for exposing the crystal circle structure by etching；
S1, the side of each layer metal layer (113) is aoxidized simultaneously；
S2, the oxidation depth for obtaining each layer metal layer (113)；
S3, the oxidation rate of corresponding metal layer (113) is obtained according to the oxidation depth of each layer metal layer (113).
4. a kind of test method of crystal circle structure according to claim 3, which is characterized in that carved in step S0 using dry method
Erosion；Metal layer (113) is aoxidized using wet oxidation in step S1.
5. a kind of test method of crystal circle structure according to claim 4, which is characterized in that the wet oxidation includes following
Step:
S11, it is passed through nitrogen；
S13, it is passed through oxygen and hydrogen, lights hydrogen, each layer metal layer (113) is aoxidized.
6. a kind of test method of crystal circle structure according to claim 5, which is characterized in that nitrogen is logical in the step S11
90 DEG C of water-baths are first carried out before entering；The molar ratio of the hydrogen and oxygen is less than 2:1.
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| CN201811008476.4A CN109285827B (en) | 2018-08-31 | 2018-08-31 | A kind of crystal circle structure and its test method |
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| CN201811008476.4A CN109285827B (en) | 2018-08-31 | 2018-08-31 | A kind of crystal circle structure and its test method |
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| Publication Number | Publication Date |
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| CN109285827A CN109285827A (en) | 2019-01-29 |
| CN109285827B true CN109285827B (en) | 2019-05-31 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624076B1 (en) * | 2000-01-21 | 2003-09-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| CN101442024A (en) * | 2007-11-22 | 2009-05-27 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device |
| CN102203024A (en) * | 2008-10-20 | 2011-09-28 | 阿文戈亚太阳能新技术公司 | Selective solar absorbent coating and manufacturing method |
-
2018
- 2018-08-31 CN CN201811008476.4A patent/CN109285827B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624076B1 (en) * | 2000-01-21 | 2003-09-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| CN101442024A (en) * | 2007-11-22 | 2009-05-27 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device |
| CN102203024A (en) * | 2008-10-20 | 2011-09-28 | 阿文戈亚太阳能新技术公司 | Selective solar absorbent coating and manufacturing method |
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| CN109285827A (en) | 2019-01-29 |
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Address after: 528400 One Floor of Three Workshops No. 32 Dongzhen Road, Zhongshan Torch Development Zone, Guangdong Province Patentee after: Xinliang Intelligent Technology (Zhongshan) Co.,Ltd. Address before: 528400 One Floor of Three Workshops No. 32 Dongzhen Road, Zhongshan Torch Development Zone, Guangdong Province Patentee before: SHENLIANG INTELLIGENT TECHNOLOGY (ZHONGSHAN) Co.,Ltd. |
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