CN109283794B - Coating mechanism and method for coating HMDS on silicon wafer - Google Patents
Coating mechanism and method for coating HMDS on silicon wafer Download PDFInfo
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- CN109283794B CN109283794B CN201811064491.0A CN201811064491A CN109283794B CN 109283794 B CN109283794 B CN 109283794B CN 201811064491 A CN201811064491 A CN 201811064491A CN 109283794 B CN109283794 B CN 109283794B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
Abstract
The invention provides a coating mechanism and a method for coating HMDS on a silicon wafer, wherein the coating mechanism comprises a coating channel mechanism, the coating channel mechanism comprises a central channel and a peripheral channel, the central channel is used for coating the central area of the silicon wafer, the peripheral channel is used for coating the peripheral area of the silicon wafer, and the coating of the central area and the peripheral area of the silicon wafer is carried out step by step, so that the problem that HMDS gas is repeatedly coated on the central area of the silicon wafer, and the peripheral area is not coated in place is avoided, and the time for HMDS to diffuse from the central area to the peripheral area is reduced to a certain extent, so that the total time of a manufacturing process is reduced.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a coating mechanism and a method for coating HMDS on a silicon wafer.
Background
In the photolithography process, the formation of a critical pattern is directly determined by the condition that a photoresist adheres to a silicon wafer, the formation of a photoresist peeling and other serious defects are caused by poor adhesion of the photoresist, research shows that the good adhesion requires that a silicon wafer contact angle is larger than 65 degrees to ensure that the photoresist adheres to the silicon wafer to meet the process requirements, and the existing photoresist coating machine adopts gas phase Hexamethyldisilane (HMDS) to improve the silicon wafer contact angle so as to improve the adhesion of the photoresist and the silicon wafer, as shown in fig. 1.
The basic factors affecting the HMDS coating performance mainly include hardware design, HMDS batch, process temperature, process time, and substrate, and in addition, it is more critical how to form a uniform HMDS molecular layer on the silicon wafer to combine with the silicon wafer to ensure that the contact angle of the silicon wafer surface meets the process requirements.
At present, photoresist coating machines are provided with a mechanism for coating HMDS, as shown in FIG. 2, the mechanism has the function of gasifying the HMDS, and then spraying HMDS gas to be combined with a silicon wafer to improve the adhesive force between a photoresist and the silicon wafer, generally, the mechanism discharges the HMDS gas through a central single hole above the silicon wafer and coats the HMDS gas on the silicon wafer, but in a specific process, a longer process time is required to be consumed to ensure that the HMDS coating on the periphery of the silicon wafer meets the requirement; if the processing time is insufficient, the adhesion force of the key pattern from the center to the edge after baking is different, pattern peeling can occur in the subsequent processing to form defects, the uniformity of HMDS formation is very important for the adhesion of the key pattern, and the difference of the adhesion of the key pattern is directly related to the formation of the pattern, thereby directly influencing the yield of the device.
Meanwhile, as devices are continuously reduced, the requirement for cleaning HMDS gas is also continuously increased, so it is necessary to research an efficient design scheme to improve the adhesion of HMDS on silicon wafers and ensure the cleanness of HMDS coated on silicon wafers.
Disclosure of Invention
The invention aims to provide a coating mechanism and a method for coating HMDS on a silicon wafer so as to reduce the processing time for performing an HMDS coating process on the silicon wafer.
In order to solve the above technical problem, the present invention provides a coating mechanism for performing a coating process on a silicon wafer, the coating mechanism comprising:
a coating chamber;
the bearing disc is positioned in the coating cavity and used for placing a silicon wafer;
a gas feed pipeline, wherein an outlet of the gas feed pipeline is communicated with the coating cavity and is used for conveying gas to coat the silicon wafer;
the inlet of the exhaust pipeline is communicated with the coating cavity and is used for exhausting redundant gas after the silicon wafer is coated;
and the coating channel mechanism is positioned in the coating cavity, is positioned below the outlet of the air supply pipeline and above the inlet of the exhaust pipeline, and is parallel to the bottom surface of the coating cavity, and comprises a central channel and a peripheral channel for limiting the position of coating the silicon wafer.
Optionally, in the coating mechanism, the central channel is cylindrical.
Optionally, in the coating mechanism, the central channel has a cross-sectional radius of 0.5cm to 10 cm.
Optionally, in the coating mechanism, the peripheral channel surrounds the central channel at a distance and is inclined in a direction away from the center of the coating chamber.
Optionally, in the coating mechanism, an acute angle formed by the peripheral channel and the bottom surface of the coating cavity ranges from 30 degrees to 80 degrees.
Optionally, in the coating mechanism, the cross section of the peripheral channel is circular, and the width of the circular ring is 0.5cm to 5 cm.
Optionally, in the coating mechanism, the coating cavity is cylindrical or cubic; the air supply pipeline is communicated with the coating cavity through the center of the top wall of the coating cavity; the exhaust duct is communicated with the coating cavity through the side wall of the coating cavity, and the inlet of the exhaust duct is positioned below the basin.
Optionally, in the coating mechanism, the coating chamber includes an upper chamber cover and a lower chamber body, the upper chamber cover and the lower chamber body are attached to each other, the air supply pipe is communicated with the coating chamber through the center of the upper chamber cover, and the air exhaust pipe is communicated with the coating chamber through the side wall of the lower chamber body; the coating channel mechanism is fixed on the inner wall of the upper cavity cover.
Optionally, in the coating mechanism, one or more stoppers are disposed on the supporting plate, and are used to limit the placement position of the silicon wafer; one or more supporting pieces are arranged below the bearing disc and used for supporting the bearing disc.
Optionally, in the coating mechanism, the coating mechanism further includes a filtering device located in the central channel and the peripheral channel for filtering impurities in the gas.
The invention also provides a method for coating HMDS on a silicon wafer, which comprises the following steps:
placing a silicon wafer in the coating cavity;
opening the central channel, conveying HMDS gas to coat the central area of the silicon wafer, and discharging redundant HMDS gas after time T1;
and opening the peripheral channel, conveying the HMDS gas to coat the periphery of the silicon wafer, and exhausting the redundant HMDS gas after time T2.
Optionally, in the method for coating HMDS on a silicon wafer, the time T1 ranges from 3s to 60s, and the time T2 ranges from 5s to 70 s.
In the coating mechanism and the method for coating the HMDS on the silicon wafer, which are provided by the invention, the coating mechanism comprises a coating channel mechanism, the coating channel mechanism comprises a central channel and a peripheral channel, the central channel is used for coating the central area of the silicon wafer, the peripheral channel is used for coating the peripheral area of the silicon wafer, and the coating of the central area and the peripheral area of the silicon wafer is carried out step by step, so that the problem that the HMDS gas is repeatedly coated on the central area of the silicon wafer, and the peripheral area is not coated in place is avoided, and the time for diffusing the HMDS from the central area to the peripheral area is reduced to a certain extent, thereby reducing the total time of the process.
Drawings
FIG. 1 is a diagram of the reaction mechanism by HMDS to increase the contact angle of a silicon wafer;
FIG. 2 is a block diagram of a prior art HMDS coating mechanism;
FIG. 3 is a structural view of a coating mechanism in an embodiment of the invention;
FIG. 4 is a structural view of a coating passage mechanism in an embodiment of the invention;
FIG. 5 is a flow chart of a method of coating HMDS on a silicon wafer according to an embodiment of the invention;
FIG. 6 is a graph showing the variation of the wafer contact angle θ with the HMDS coating time T.
Wherein the reference numerals are as follows:
11-a coating chamber; 12-a basin; 13-an air supply duct; 14-an exhaust duct; 15-a coating channel mechanism; 151-central channel; 152-peripheral channel.
Detailed Description
The following describes a coating mechanism and a method for coating HMDS on silicon wafer according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As shown in fig. 3, which is a schematic cross-sectional view of a coating mechanism structure provided in this embodiment, for performing a coating process on a silicon wafer, the coating mechanism includes a coating chamber 11, a susceptor 12, a gas supply pipe 13, an exhaust pipe 14, and a coating channel mechanism 15. The position relation and the function of each component part are as follows:
the tray 12 is positioned in the coating cavity 11, preferably close to the bottom of the coating cavity 11, and is used for placing a silicon wafer; the outlet of the gas supply pipeline 13 is communicated with the coating cavity 11 and is used for supplying gas to coat the silicon wafer; the inlet of the exhaust pipeline 14 is communicated with the coating cavity 11 and is used for exhausting redundant gas after the silicon wafer is coated; the coating channel mechanism 15 is located in the coating chamber 11, below the outlet of the gas supply pipe 13 and above the inlet of the exhaust pipe 14, and is parallel to the bottom surface of the coating chamber 11, specifically, a first surface of the coating channel mechanism 15 close to the bottom surface of the coating chamber 11 is parallel to the bottom surface of the coating chamber 11, further, a second surface of the coating channel mechanism 15 opposite to the first surface is also parallel to the bottom surface of the coating chamber 11, the coating channel mechanism 15 includes a central channel 151 and a peripheral channel 152 for defining a position for coating the silicon wafer, the central channel 151 is used for coating the center of the silicon wafer, and the peripheral channel 152 is used for coating the periphery of the silicon wafer.
The coating cavity 11 is cylindrical or cubic, preferably, the coating cavity 11 is cylindrical, and the diameter of the coating cavity 11 is slightly larger than the diameter of the bearing disc 12, but the condition that the coating cavity 11 is cubic is not excluded, and only the length of the side of the bottom surface of the coating cavity 11 is slightly larger than the diameter of the bearing disc 12; the air supply pipe 13 is communicated with the coating chamber 11 through the center of the top wall of the coating chamber 11; the exhaust duct 14 is communicated with the coating chamber 11 through the side wall of the coating chamber 11, the inlet of the exhaust duct 14 is positioned below the support disc 12, and after the excessive gas reaches the inlet of the exhaust duct 14 through the gap between the support disc 12 and the coating chamber 11, the excessive gas is exhausted through the exhaust duct 14, because the gas flow direction is a process from top to bottom, the design is such that the excessive gas is easier to be exhausted after the coating process of the silicon wafer is completed, so as to reduce the time of the total process. Further, the coating chamber 11 comprises an upper chamber cover and a lower chamber (not distinguished in fig. 3), the upper chamber cover and the lower chamber are attached to each other, the air supply duct 13 is communicated with the coating chamber 11 through the center of the upper chamber cover, the exhaust duct 14 is communicated with the coating chamber 11 through the side wall of the lower chamber, and the inlet of the exhaust duct 14 is located below the basin 12; the coating channel mechanism 15 is fixed on the inner wall of the upper cavity cover.
In addition, since the central channel 151 and the peripheral channel 152 of the coating channel mechanism 15 and the setting of the coating process parameters have a certain relationship with the placing position of the silicon wafer, preferably, one or more position-limiting members 121 are disposed on the supporting disk 12 for limiting the placing position of the silicon wafer to achieve the desired coating effect; and, preferably, one or more supporting members 122 are provided under the basin 12 for supporting the basin 12 so that a certain distance exists between the basin 12 and the bottom of the coating chamber 11, thereby facilitating the flow of the surplus gas to the outlet of the gas delivery pipe 13. When the number of the limiting members 121 is one, the limiting members 121 may be annular, and when the number of the limiting members 121 is plural, the limiting members 121 are uniformly distributed on the periphery of the supporting plate, and the specific position of the supporting member 122 is not limited herein, so that the supporting plate is only required to be horizontally and stably placed.
Referring to fig. 4, specifically, the central channel 151 is cylindrical, and the radius of the cross section (along the horizontal direction) of the central channel 151 is 0.5cm to 10cm, for example, 0.5cm, 2cm, 5cm, 8cm, 10cm, and the like; the peripheral channels 152 surround the central channel 151 and are inclined away from the center of the coating chamber 11, and the acute angle formed by the bottom surface of the coating chamber 11 or the parallel surface of the bottom surface of the coating chamber 11 is in the range of 30 ° to 80 °, such as 30 °, 50 °, 60 °, 80 °, etc., so that the gas can be better diffused toward the periphery through the peripheral channels 152; the cross section of the peripheral channel 152 is circular, and the width of the circular ring is 0.5cm to 5cm, for example, 0.5cm, 1cm, 3cm, 5cm, and the like. The central passage 151 and the peripheral passage 152 may be a unitary passage as shown in fig. 4, or may be a combined passage composed of a plurality of sub-passages. The coating channel means 15 further comprise filtering means (not shown) located in the central channel 151 and the peripheral channel 152 for filtering the impurities in the gas. The filter means may in particular be fixed in the central channel 151 and the peripheral channel 152, which may for example be a piece of filter mesh or the like.
In view of the above coating mechanism, the present embodiment also provides a method for coating HMDS on a silicon wafer using the coating mechanism, the method comprising:
step S01, placing a silicon wafer in the coating cavity 11;
step S02, opening the central channel 151, delivering HMDS gas to coat the central area of the silicon wafer, and discharging redundant HMDS gas after time T1;
in step S03, the peripheral channel 152 is opened, HMDS gas is supplied to coat the periphery of the silicon wafer, and the surplus HMDS gas is exhausted after time T2.
The time T1 ranges from 3s to 60s, such as 3s, 10s, 20s, 30s, 50s, and 60s, the time T2 ranges from 5s to 70s, such as 5s, 10s, 30s, 50s, and 70s, and the specific time is set according to the process requirement.
In step S02, the peripheral channel 152 is in a closed state when the central channel 151 is open, and in step S03, the central channel 151 is in a closed state when the peripheral channel 152 is open. In addition, the steps S02 and S03 may be interchanged, that is, the periphery of the silicon wafer may be coated first and then the central region of the silicon wafer may be coated.
As described above, in the prior art, the HMDS gas is usually exhausted through a single hole at the center above the silicon wafer by the coating mechanism for coating the HMDS gas on the silicon wafer, but in a specific process, it takes a long process time to ensure that the HMDS coating on the periphery of the silicon wafer meets the requirement; if the process time is not enough, the adhesion force of the key pattern from the center to the edge after baking is different, and the pattern is peeled off to form defects in the subsequent process. The coating mechanism provided by the embodiment comprises a coating channel mechanism, wherein the coating channel mechanism comprises a central channel and a peripheral channel, the central channel is used for coating the central area of the silicon wafer, the peripheral channel is used for coating the peripheral area of the silicon wafer, and the coating of the central area and the peripheral area of the silicon wafer is carried out step by step, so that the problem that the HMDS gas is repeatedly coated on the central area of the silicon wafer, but the peripheral area is not coated in place is avoided, and the time for the HMDS to diffuse from the central area to the peripheral area is reduced to a certain extent, so that the total time of the manufacturing process is reduced. As shown in fig. 6, the contact angle θ between the central region of the wafer and the periphery of the wafer is plotted as a function of the HMDS coating time T. Specifically, curve 6a represents the change of the contact angle θ of the central region of the silicon wafer with time T when the silicon wafer is coated by the coating mechanism provided in the prior art or by the coating mechanism provided in the present embodiment and the method of coating HMDS on the silicon wafer; curve 6b represents the change of the contact angle θ of the peripheral region of the silicon wafer with time T when the silicon wafer is coated by the coating mechanism and the method of coating HMDS on the silicon wafer provided in this embodiment; curve 6c shows the contact angle theta of the peripheral region of the wafer as a function of time T, when the wafer was coated by the prior art technique. As can be seen from the figure, in the case that the contact angle of the peripheral region of the silicon wafer is also made to reach the process standard (greater than 65 °), compared with the prior art, the time for coating the peripheral region by the coating mechanism and the method for coating HMDS on the silicon wafer provided by the embodiment is shortened by T1, and the improvement effect is obvious.
Further, in this embodiment, the coating channel mechanism further includes a filtering device for filtering impurities in the HMDS gas, so that the cleanliness of the HMDS gas coated on the silicon wafer can be improved, and the impurities are prevented from being coated on the silicon wafer to affect the contact angle of the silicon wafer to a certain extent.
In summary, on the premise that the HMDS is coated on the silicon wafer so that the contact angle of the surface of the silicon wafer meets the process requirement, compared with the prior art, the coating mechanism and the method for coating the HMDS on the silicon wafer provided by the invention reduce the total time of the process and reduce the impurity defects of the HMDS.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (11)
1. A coating mechanism for performing a coating process on a silicon wafer, the coating mechanism comprising:
a coating chamber;
the bearing disc is positioned in the coating cavity and used for placing a silicon wafer;
a gas feed pipeline, wherein an outlet of the gas feed pipeline is communicated with the coating cavity and is used for conveying gas to coat the silicon wafer;
the inlet of the exhaust pipeline is communicated with the coating cavity and is used for exhausting redundant gas after the silicon wafer is coated;
a coating channel mechanism which is positioned in the coating cavity, is positioned below the outlet of the air supply pipeline and above the inlet of the air exhaust pipeline and is parallel to the bottom surface of the coating cavity, and comprises a central channel and a peripheral channel for limiting the position of coating the silicon wafer; wherein the central channel is aligned with the basin and the peripheral channel is disposed around the central channel.
2. A coating mechanism as in claim 1, wherein said central channel is cylindrical.
3. A coating mechanism as in claim 2, wherein said central channel has a cross-sectional radius of 0.5cm to 10 cm.
4. A coating mechanism as in claim 2, wherein said peripheral channel surrounds said central channel at a distance and is inclined away from a center of said coating chamber.
5. A coating mechanism as in claim 4, wherein said peripheral channel forms an acute angle with said coating chamber floor in the range of 30 ° to 80 °.
6. A coating mechanism as in claim 3, wherein said peripheral channel has a circular cross-section with a circular width of 0.5cm to 5 cm.
7. The coating mechanism of claim 1 wherein said coating chamber is cylindrical or cubic; the air supply pipeline is communicated with the coating cavity through the center of the top wall of the coating cavity; the exhaust duct is communicated with the coating cavity through the side wall of the coating cavity, and the inlet of the exhaust duct is positioned below the basin.
8. A coating mechanism as in claim 7, wherein said coating chamber includes an upper chamber cover and a lower chamber body, said upper chamber cover and said lower chamber body being attached to each other, said air supply duct communicating with said coating chamber through a center of said upper chamber cover, said air exhaust duct communicating with said coating chamber through a sidewall of said lower chamber body; the coating channel mechanism is fixed on the inner wall of the upper cavity cover.
9. The coating mechanism of claim 8, wherein one or more stoppers are provided on said tray for limiting the placement position of said silicon wafer; one or more supporting pieces are arranged below the bearing disc and used for supporting the bearing disc.
10. A coating mechanism as in any one of claims 1 to 9, further comprising a filter device located within said central channel and said peripheral channel for filtering impurities in the gas.
11. A method for coating HMDS on a silicon wafer using the coating mechanism of any of claims 1-10, the method comprising:
placing a silicon wafer in the coating cavity;
opening the central channel, conveying HMDS gas to coat the central area of the silicon wafer, and discharging redundant HMDS gas after time T1;
and opening the peripheral channel, conveying the HMDS gas to coat the periphery of the silicon wafer, and exhausting the redundant HMDS gas after time T2.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101137266A (en) * | 2006-08-28 | 2008-03-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN101179022A (en) * | 2006-11-10 | 2008-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN104252067A (en) * | 2014-09-16 | 2014-12-31 | 京东方科技集团股份有限公司 | Coating device and coating method of seal agent |
| CN108080220A (en) * | 2018-01-24 | 2018-05-29 | 宁波润华全芯微电子设备有限公司 | A kind of monolithic Silicon Wafer gas phase HMDS apparatus for coating |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5327238B2 (en) * | 2011-01-20 | 2013-10-30 | 東京エレクトロン株式会社 | Coating processing apparatus, coating processing method, and storage medium |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101137266A (en) * | 2006-08-28 | 2008-03-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN101179022A (en) * | 2006-11-10 | 2008-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN104252067A (en) * | 2014-09-16 | 2014-12-31 | 京东方科技集团股份有限公司 | Coating device and coating method of seal agent |
| CN108080220A (en) * | 2018-01-24 | 2018-05-29 | 宁波润华全芯微电子设备有限公司 | A kind of monolithic Silicon Wafer gas phase HMDS apparatus for coating |
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