CN109280890A - A method of enhancing nano silver film photoelectric properties - Google Patents
A method of enhancing nano silver film photoelectric properties Download PDFInfo
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- CN109280890A CN109280890A CN201811054179.3A CN201811054179A CN109280890A CN 109280890 A CN109280890 A CN 109280890A CN 201811054179 A CN201811054179 A CN 201811054179A CN 109280890 A CN109280890 A CN 109280890A
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- China
- Prior art keywords
- nano silver
- film
- silver film
- photoelectric properties
- nanometer copper
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 65
- 239000010949 copper Substances 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000011159 matrix material Substances 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 238000007747 plating Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a kind of methods for enhancing nano silver film photoelectric properties, i.e., first prepare one layer of thin layer nanometer Copper thin film on matrix before preparing nano silver film.The present invention enhances the electric conductivity and optical transmittance of nano silver film by deposition plating nanocrystalline Cu film, and method is simple, is easily achieved.
Description
Technical field
The present invention relates to nano silver film field, the method for specifically a kind of enhancing nano silver film photoelectric properties.
Background technique
Nano silver film compared with common Ag films have biggish specific surface area and higher high surface activity, and due to
Its unique optics, electricity and biological characteristics are applied to bio-sensing, biological medicine, environmental improvement, catalysis, conduction, lead
In the fields such as heat, wide application prospect has caused people and has widely paid attention to.
Although block silver good conductivity, when scale narrows down to nanoscale, the conductive capability of nano silver film is weak,
Limit application of the nano silver film in nano photoelectric device.On the other hand, nano-Ag particles have strong surface etc. from sharp
First resonance characteristics shows as having strong absorption to visible light, and enhanced intensity around nano particle.This characteristic makes nano silver exist
Enhance molecule absorption, enhancing Raman scattering and enhancing fluorescent emission etc. has huge application prospect.But nano particle
This certain occasions of surface plasmon resonance characteristic under play negative effect, for example strong absorb will lead to film transmission rate
It is low.Therefore surface plasmon resonance is inhibited to play an important role to film transmission rate is improved.
Summary of the invention
The object of the present invention is to provide a kind of methods for enhancing nano silver film photoelectric properties, to solve prior art nanometer
Ag films electric conductivity is weak, the low problem of transmitance.
In order to achieve the above object, the technical scheme adopted by the invention is as follows:
A method of enhancing nano silver film photoelectric properties, it is characterised in that: before preparing nano silver film to matrix,
Nanometer Copper thin film is prepared first on matrix, then prepares nano silver film on nanometer Copper thin film.
A kind of method of enhancing nano silver film photoelectric properties, it is characterised in that: the Nanometer Copper prepared on matrix
The thickness of film is greater than 3nm.
A kind of method of enhancing nano silver film electric conductivity, it is characterised in that: the preparation cleaning thin layer on matrix
Nanometer Copper thin film, preparation nanometer copper method includes but is not limited to vacuum evaporation coating, vacuum magnetic-control sputtering plating method.
Nanometer Copper thin film is prepared using the method for vacuum vapor plating on matrix.
The method of a kind of enhancing nano silver film photoelectric properties, it is characterised in that: using vacuum vapor plating
When method prepares nanometer Copper thin film, vacuum degree is higher than 1.0 × 10-3Pa is loaded and is steamed when being coated with using DMDE-450 type coating machine
The molybdenum boat electrical current 90-100A to rise, plated film time are not less than 60s.
The method of a kind of enhancing nano silver film electric conductivity, it is characterised in that: prepared on nanometer Copper thin film clear
Clean nano silver film, the method for preparing nano silver film include but is not limited to vacuum evaporation coating, vacuum magnetic-control sputtering plating.
Nano silver film is prepared using the method for vacuum vapor plating on nanometer Copper thin film.
The method of a kind of enhancing nano silver film electric conductivity, it is characterised in that: using the side of vacuum vapor plating
When method prepares nano silver film, vacuum degree is higher than 1.0 × 10-3Pa, the molybdenum boat electrical current for loading evaporation source is 100A, when plated film
Between be not less than 90s.
In the present invention, the electric conductivity of the nano silver film after the completion of preparing, can by four probe resistance rate testers into
Row test；Optical transmittance is acquired with spectrophotometer.
Inhibition of the principle of the invention based on high density nucleation and nano silver surface plasmon resonance.Deposition nano silver it
Before, one layer of thin layer nano copper particle is deposited on glass matrix, since to be nucleated size on matrix smaller than nano silver very for Nanometer Copper
More, so the quantity of unit area matrix coker is more, that is, copper core high density on matrix is distributed, the nano silver then deposited
Major part will be using Nanometer Copper as core, on Nanometer Copper surface to outgrowth, and constructs a kind of surface plasmon resonance and hinder by force
Buddhist nun's system.The film consistency being prepared is high, is conducive to conduction, simultaneously because nano silver surface plasmon resonance is pressed down
System, the optical transmittance of film obtain larger raising.
Compared with the prior art, the beneficial effects of the present invention are embodied in:
The present invention enhances the photoelectric properties of nano silver film by deposition plating nanocrystalline Cu film, shows as sheet resistance reduction, transmitance
It improves.Method is simple, is easily achieved, and has expanded application range of the nano silver film in terms of nano photoelectric device.
Detailed description of the invention
Fig. 1 is the nano thin-film schematic diagram that the present invention makes.
Fig. 2 is the optical absorption spectra for the nano thin-film that the present invention makes.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples, the present embodiment only provide it is a kind of prepare example, but
The scope of this patent is not limited to this embodiment.
A method of enhancing nano silver film photoelectric properties, before preparing nano silver film to matrix, first in matrix
Upper preparation nanometer Copper thin film, then prepares nano silver film on plating nanocrystalline Cu film, such as Fig. 1 of the membrane structure after the completion of preparing institute
Show, including matrix 1, nanometer Copper thin film 2 and nano silver film 3.
In the present invention, the thickness of the nanometer Copper thin film prepared on matrix is greater than 3nm.Vacuum vapor plating is used on matrix
Method prepare nanometer Copper thin film.When preparing nanometer Copper thin film using the method for vacuum vapor plating, DMDE-450 vacuum is used
Coating machine places copper evaporation source in vacuum chamber, plated film chamber pressure is fallen below 7.0*10-4Pa, to loading copper evaporation source
Molybdenum boat be powered, current regulation 120A.In the present invention, the method system of vacuum vapor plating is used on nanometer Copper thin film
Standby nano silver film.It, will using DMDE-450 vacuum coating equipment when preparing nano silver film using the method for vacuum vapor plating
The near 7.0*10 of vacuum degree-4Pa is powered to the molybdenum boat for loading silver-colored evaporation source, current regulation 100A.
Prepared sample sheet resistance value is as shown in table 1 through the invention.As can be seen from the table, 5 nano silvers are non-conductive, and 3
Nanometer Copper is non-conductive, but then conductive in 5 nano silver bottom deposit, 3 Nanometer Copper, and individual 10 nano silver is all non-conductive, can
See, can significantly enhance nano silver film electric conductivity by depositing plating nanocrystalline Cu film.Solid line shown in Fig. 2 is that first deposition 4.0nm receives
The absorption spectra of sample prepared by rice 5.0nm nanometers of silverskin of copper film redeposition, dotted line are the higher 10nm nano silver film of thickness
Absorption spectra.It can be seen that absorption spectra shown in solid is lower than absorption spectra shown in dotted line, the transmitance of sample corresponding to corresponding solid line
It is higher than sample corresponding to dotted line, therefore the transmitance of film is improved.
The sheet resistance value table of 1 nano silver film of table and the composite membrane being deposited on different-thickness nanometer Copper thin film
| Sample | Electric conductivity |
| Glass matrix -10.0nmAg | It is non-conductive |
| Glass matrix -5.0nmAg | It is non-conductive |
| Glass matrix -3.0nmCu | It is non-conductive |
| Glass matrix -3.0nmCu-5.0nmAg | 45KΩ/□ |
| Glass matrix -4.0nmCu | 450KΩ/□ |
| Glass matrix -4.0nmCu-5.0nmAg | 700Ω/□ |
Claims (6)
1. a kind of method for enhancing nano silver film photoelectric properties, it is characterised in that: first before preparing nano silver film to matrix
Nanometer Copper thin film is first prepared on matrix, and nano silver film is then prepared on plating nanocrystalline Cu film.
2. a kind of method for enhancing nano silver film photoelectric properties according to claim 1, it is characterised in that: made on matrix
The thickness of standby nanometer Copper thin film is greater than 3nm.
3. a kind of method for enhancing nano silver film photoelectric properties according to claim 1, it is characterised in that: on matrix
Clean nanometer Copper thin film is prepared, the method for preparing Nanometer Copper includes but is not limited to vacuum evaporation coating, vacuum magnetic-control sputtering plating.
4. a kind of method for enhancing nano silver film photoelectric properties according to claim 3, it is characterised in that: use vacuum
When the method for evaporation coating prepares nanometer Copper thin film, vacuum degree is higher than 1.0 × 10-3Pa, for using DMDE-450 type coating machine
When being coated with, the molybdenum boat electrical current for loading evaporation source is 110-120A, and plated film time is not less than 60s.
5. a kind of method for enhancing nano silver film photoelectric properties according to claim 1, it is characterised in that: in Nanometer Copper
Preparation cleaning nano silver film on film, the method for preparing nano silver film includes but is not limited to vacuum evaporation coating, vacuum magnetic control
Sputtering plating.
6. a kind of method for enhancing nano silver film photoelectric properties according to claim 1, it is characterised in that: use vacuum
When the method for evaporation coating prepares nano silver film, vacuum degree is higher than 1.0 × 10-3Pa loads the molybdenum boat electrical current of evaporation source
For 90-100A, plated film time is not less than 90s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811054179.3A CN109280890B (en) | 2018-09-11 | 2018-09-11 | Method for enhancing photoelectric performance of nano silver film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811054179.3A CN109280890B (en) | 2018-09-11 | 2018-09-11 | Method for enhancing photoelectric performance of nano silver film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109280890A true CN109280890A (en) | 2019-01-29 |
| CN109280890B CN109280890B (en) | 2023-10-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811054179.3A Active CN109280890B (en) | 2018-09-11 | 2018-09-11 | Method for enhancing photoelectric performance of nano silver film |
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| Country | Link |
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| CN (1) | CN109280890B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2065486A1 (en) * | 2007-11-30 | 2009-06-03 | Commissariat à l'Energie Atomique | Method of depositing metal nanoparticles by physical deposition in vapour phase |
| CN102660733A (en) * | 2012-05-09 | 2012-09-12 | 复旦大学 | Silver nanoparticle film with mixed valent state, preparation method thereof and application thereof |
| CN104681208A (en) * | 2015-03-18 | 2015-06-03 | 合肥工业大学 | Method for improving conductivity of nano-silver thin films |
| CN104818461A (en) * | 2015-04-09 | 2015-08-05 | 河南科技大学 | Nanometer silver clapped copper particle film composite material preparation method |
| CN105925935A (en) * | 2016-05-17 | 2016-09-07 | 苏州市康普来表面处理科技有限公司 | Physical vapor deposition technology applied to communication system assembly for replacing water electroplating |
| CN105925947A (en) * | 2016-05-17 | 2016-09-07 | 河北大学 | Nanometer multi-layer transparent conducting thin film |
| US20160343887A1 (en) * | 2015-05-20 | 2016-11-24 | King Fahd University Of Petroleum And Minerals | Silver nanoparticles on conducting electrode as plasmonic scattering nanomaterial and related photovoltaic cells |
-
2018
- 2018-09-11 CN CN201811054179.3A patent/CN109280890B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2065486A1 (en) * | 2007-11-30 | 2009-06-03 | Commissariat à l'Energie Atomique | Method of depositing metal nanoparticles by physical deposition in vapour phase |
| CN102660733A (en) * | 2012-05-09 | 2012-09-12 | 复旦大学 | Silver nanoparticle film with mixed valent state, preparation method thereof and application thereof |
| CN104681208A (en) * | 2015-03-18 | 2015-06-03 | 合肥工业大学 | Method for improving conductivity of nano-silver thin films |
| CN104818461A (en) * | 2015-04-09 | 2015-08-05 | 河南科技大学 | Nanometer silver clapped copper particle film composite material preparation method |
| US20160343887A1 (en) * | 2015-05-20 | 2016-11-24 | King Fahd University Of Petroleum And Minerals | Silver nanoparticles on conducting electrode as plasmonic scattering nanomaterial and related photovoltaic cells |
| CN105925935A (en) * | 2016-05-17 | 2016-09-07 | 苏州市康普来表面处理科技有限公司 | Physical vapor deposition technology applied to communication system assembly for replacing water electroplating |
| CN105925947A (en) * | 2016-05-17 | 2016-09-07 | 河北大学 | Nanometer multi-layer transparent conducting thin film |
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| Publication number | Publication date |
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| CN109280890B (en) | 2023-10-27 |
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