CN109273567A - A kind of manufacturing method and its application of light-emitting diode epitaxial structure - Google Patents
A kind of manufacturing method and its application of light-emitting diode epitaxial structure Download PDFInfo
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- CN109273567A CN109273567A CN201811424969.6A CN201811424969A CN109273567A CN 109273567 A CN109273567 A CN 109273567A CN 201811424969 A CN201811424969 A CN 201811424969A CN 109273567 A CN109273567 A CN 109273567A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000004020 luminiscence type Methods 0.000 claims abstract description 84
- 230000012010 growth Effects 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000001257 hydrogen Substances 0.000 claims description 47
- 229910052739 hydrogen Inorganic materials 0.000 claims description 47
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 45
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 21
- 229910021529 ammonia Inorganic materials 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 230000007773 growth pattern Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910017083 AlN Inorganic materials 0.000 description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- 230000003190 augmentative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 230000003111 delayed effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000001963 growth medium Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention proposes the manufacturing method and its application of a kind of light-emitting diode epitaxial structure, including substrate, the n type semiconductor layer grown on substrate, the multi-quantum well luminescence layer grown on n type semiconductor layer, the p type semiconductor layer grown in multi-quantum well luminescence layer, there is also 3D island layer and 2D two-dimensional layer between substrate and n type semiconductor layer, multi-quantum well luminescence layer includes the buffer layer of multi-quantum well luminescence layer, the well layer of multi-quantum well luminescence layer, the barrier layer of multi-quantum well luminescence layer；The growth course of the buffer layer of multi-quantum well luminescence layer of the present invention uses pulse mode alternating growth, and the adjustable trap improved in multi-quantum well luminescence layer of the growth pattern builds interface state, device defects density reduced, to improve the performance of device.The present invention also proposes in a kind of manufacturing method that light-emitting diode epitaxial structure is applied to micro-led device.
Description
Technical field
The present invention relates to technical field of semiconductor device, in particular to a kind of manufacturing method of light-emitting diode epitaxial structure
And its application.
Background technique
With the fast development of LED technology, light emitting diode in every field using more and more extensive,
Currently, to still have luminous efficiency lower for light emitting diode, it is difficult to it is higher and higher to the luminous efficiency of light emitting diode to meet market
It is required that the problem of.
It is micro-led to be known as being one of most important display technology of next generation, due to micro-led
Function admirable, can be applicable to wearable wrist-watch, mobile phone, vehicle display, augmented reality/virtual reality, display screen and electricity
Depending on etc. fields.Micro-led technology, i.e. light emitting diode miniatureization and matrixing technology, in simple terms, being exactly will hair
Optical diode backlight carries out filming, microminiaturization, array, and micro-led unit can be allowed less than 50 microns,
It can be realized the independent addressing of each pixel as Organic Light Emitting Diode, luminous (self-luminous) be operated alone.
It is micro-led at present to face equipment, material, panel and the technical bottleneck of brand manufacturers, especially sent out in upstream
In optical diode epitaxial process, how to grow with low-defect-density epitaxial structure is that micro-led urgent need solves
The problem of.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of light-emitting diode epitaxial structures
Manufacturing method, can be grown by this method with low-defect-density epitaxial structure, be effectively improved light-emitting diode device
Performance.
To achieve the above object, the present invention proposes following scheme: a kind of manufacturing method of light-emitting diode epitaxial structure, institute
The manufacturing method for stating epitaxial structure includes the following contents:
Substrate is provided；
N type semiconductor layer is grown over the substrate；
Multi-quantum well luminescence layer is grown on the n type semiconductor layer；
The growing P-type semiconductor layer in the multi-quantum well luminescence layer；
The multi-quantum well luminescence layer includes the buffer layer of multi-quantum well luminescence layer, and the well layer of multi-quantum well luminescence layer is more
The barrier layer of mqw light emitting layer, the well layer of the multi-quantum well luminescence layer are grown in the buffer layer of the multi-quantum well luminescence layer
On, the barrier layer of the multi-quantum well luminescence layer is grown in the well layer of the multi-quantum well luminescence layer.
The substrate includes aluminium nitride substrate, silicon substrate or silicon carbide substrates；
3D island layer and 2D two-dimensional layer are also grown between the substrate and the n type semiconductor layer, the 3D island layer is raw
Over the substrate, the 2D two-dimensional layer is grown on the 3D island layer length, and the n type semiconductor layer is grown in the 2D bis-
It ties up on layer；
Wherein: when growing the 3D island layer, after being passed through triethyl-gallium, needing to adjust growth temperature in 950-1200
Between DEG C, growth pressure is adjusted between 100-500torr, after 3D island layer growth, by growth temperature adjust to
Between 950-1200 DEG C, growth pressure is adjusted between 100-600torr, and the 2D two-dimensional layer starts on the 3D island layer
Growth；
When growing the n type semiconductor layer, need growth temperature adjusting the growth pressure between 1000-1200 DEG C
Adjustment is between 100-600torr；
When growing the buffer layer of the multi-quantum well luminescence layer, need the hydrogen in triethyl-gallium and growth atmosphere
Intake is passed through in a pulsed mode, and the flow of the triethyl-gallium carries out pulse with the growth atmosphere of different hydrogen accounting and replaces life
Long, the intake of the triethyl-gallium and the hydrogen in the growth atmosphere is adjustable, and the multi-quantum well luminescence layer is delayed
Layer is rushed to grow according to pulse mode；When growing the buffer layer of the multi-quantum well luminescence layer, it is also necessary to adjust growth temperature
Between 750-950 DEG C, growth pressure is adjusted between 100-500torr, and operation revolving speed adjustment is described between 500-1200
Between 0.1-50%, gas is distributed in reasonable gas accounting of the hydrogen in nitrogen/total tolerance of hydrogen/ammonia in growth atmosphere
Mutual matched under flow model；
When growing the barrier layer of the multi-quantum well luminescence layer, need to be passed through the hydrogen in triethyl-gallium and growth atmosphere,
Accounting of the hydrogen in nitrogen/total tolerance of hydrogen/ammonia in the growth atmosphere is greater than 5%, and gas is distributed in reasonable air-flow
Mutual matched under model, it is also necessary to which by growth temperature adjustment between 750-950 DEG C, growth pressure is adjusted in 100-500torr
Between, operation revolving speed adjustment is between 500-1200；
It when growing p-type semiconductor layer, needs to adjust growth temperature between 620-1200 DEG C, growth pressure adjustment exists
Between 100-600Torr, V/III molar ratio is controlled between 200-6000, and the p-type semiconductor layer growth thickness control exists
Between 10-100nm；
When growing the multi-quantum well luminescence layer, the well layer of the multi-quantum well luminescence layer and the multiple quantum well light emitting
The barrier layer sequentially cycle growth of layer；
After epitaxial structures growth, epitaxial structure is through over cleaning, deposition, the subsequent machining technologies system such as lithography and etching
At single chip；
In one embodiment of the present invention, when growing the multi-quantum well luminescence layer, high-purity hydrogen or nitrogen are used
Make as carrier gas using trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia as gallium, aluminium, indium and nitrogen source
It is adulterated with silane and two luxuriant magnesium respectively as N-type and p-type.
In order to achieve the above objects and other related objects, the present invention also provides a kind of above-mentioned light-emitting diode epitaxy junctions to be configured
The purposes of method is made, the light-emitting diode epitaxial structure manufacturing method is applied in the manufacture of micro-led device.
A kind of manufacturing method of micro-led device, including,
The epitaxial structure of light-emitting diode is provided；
Divide the epitaxial structure of the light-emitting diode, to form multiple micro-led chips；
The micro-led chip is transferred on a substrate；
Wherein, when providing the epitaxial structure of the light-emitting diode, the manufacturing method of light-emitting diode epitaxial structure, packet
It includes:
Substrate is provided；
N type semiconductor layer is grown over the substrate；
Multi-quantum well luminescence layer is grown on the n type semiconductor layer；
The growing P-type semiconductor layer in the multi-quantum well luminescence layer；
The multi-quantum well luminescence layer includes the buffer layer of multi-quantum well luminescence layer, and the well layer of multi-quantum well luminescence layer is more
The barrier layer of mqw light emitting layer；
Wherein, when growing the buffer layer of the multi-quantum well luminescence layer, hydrogen in triethyl-gallium and growth atmosphere
Intake is passed through in a pulsed mode, i.e., the flow of the described triethyl-gallium carries out pulse with the growth atmosphere of different hydrogen accounting and replaces
Growth；Accounting of the hydrogen in nitrogen/total tolerance of hydrogen/ammonia in the growth atmosphere is between 0.1-50%, when growth
Operating pressure between 100-500torr；And when the barrier layer of the growth multi-quantum well luminescence layer, hydrogen nitrogen/hydrogen/
Accounting in the total tolerance of ammonia is greater than 5%.
The manufacturing method and its application of a kind of light-emitting diode epitaxial structure provided by the invention, in growth multiple quantum wells hair
When the buffer layer of photosphere, the hydrogen in growth atmosphere is passed through according to pulse mode, and the buffer layer of multi-quantum well luminescence layer is according to arteries and veins
Rush pattern growth, it is possible to reduce the valence link of fracture, impurity and defect etc. can obtain smooth, the high interface of clarity, reduce boundary
Planar defect or trap have certain repair to interface in other words, can improve trap in multi-quantum well luminescence layer and build interface shape
The manufacturing method of the light-emitting diode epitaxial structure to improve device performance, therefore can be applied to miniature luminous two by state
In the manufacturing method of pole pipe device.
Detailed description of the invention
Fig. 1 is the schematic diagram for the epitaxial structure mentioned in the embodiment of the present invention.
Fig. 2 is the structural schematic diagram of multi-quantum well luminescence layer.
Fig. 3 is the preparation method flow chart of epitaxial structure of the invention.
Fig. 4 is the schematic diagram of micro-led device in embodiment.
Fig. 5 is the flow chart of micro-led device producing method in the present embodiment.
Component label instructions
1 aluminium nitride plated film substrate
2 3D island layers
3 2D two-dimensional layers
4 n type semiconductor layers
5 multi-quantum well luminescence layers
6 n type semiconductor layers
7 substrates
8 micro-led chips
The buffer layer of 51 multi-quantum well luminescence layers
The well layer of 52 multi-quantum well luminescence layers
The barrier layer of 53 multi-quantum well luminescence layers
S1-S6 step
S101-S301 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.It should be noted that in the absence of conflict, following embodiment and implementation
Feature in example can be combined with each other.
It should be noted that illustrating the basic structure that only the invention is illustrated in a schematic way provided in following embodiment
Think, only shown in schema then with related component in the present invention rather than component count, shape and size when according to actual implementation
Draw, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel
It is likely more complexity.
The present invention provides a kind of manufacturing method of light-emitting diode epitaxial structure, the manufacturing method packets of the epitaxial structure
Following steps are included, Fig. 1-3 is please referred to:
S1: a substrate 1 is provided；
S2: 3D island layer 2 is grown on the substrate 1；
S3: 2D two-dimensional layer 3 is grown on the 3D island layer 2；
S4: n type semiconductor layer 4 is grown on the 2D two-dimensional layer 3；
S5: multi-quantum well luminescence layer 5 is grown in the n type semiconductor layer 4；
S6: the p type semiconductor layer is grown in the multi-quantum well luminescence layer 5；
Wherein, the multi-quantum well luminescence layer 5 may include the buffer layer 51 of multi-quantum well luminescence layer, multi-quantum well luminescence layer
Well layer 52, the barrier layer 53 of multi-quantum well luminescence layer；
In step sl, the substrate 1 is the substrate of outer layer growth, has the function of support and stable, the substrate 1
Including sapphire, silicon carbide, aluminium nitride, aluminium nitride etc., preferred aluminium nitride plated film substrate in the present embodiment；
In step s 2, it when growing the 3D island layer 2, needs to adjust growth temperature between 950-1200 DEG C, it will
Growth pressure controls between 100-500torr, and after being passed through triethyl-gallium, the 3D island layer 2 starts to grow；
In step s3, the 2D two-dimensional layer 3 is grown, needs to adjust growth temperature between 1000-1200 DEG C, will give birth to
Long pressure control is between 100-500torr；
In step s 4, it when growing n type semiconductor layer 4, needs to adjust growth temperature between 1000-1200 DEG C, it will
Growth pressure controls between 100-600torr
In step s 5, it when growing the buffer layer 51 of the multi-quantum well luminescence layer, needs triethyl-gallium and growth
The intake of hydrogen in atmosphere is passed through in a pulsed mode, the flow of the triethyl-gallium and the growth atmosphere of different hydrogen accounting
Pulse alternating growth is carried out, i.e., the buffer layer 51 of the described multi-quantum well luminescence layer is grown according to pulse mode, wherein three second
The pulse mode of the intake of base gallium and the hydrogen in the growth atmosphere can change, such as in growth early period, hydrogen leads to
Entering accounting of the amount in ammonia is 1%, and in growth medium, accounting of the intake of hydrogen in ammonia is 10%, meanwhile, it is described
The intake needs of triethyl-gallium are changed according to the variation of the hydrogen in the growth atmosphere, the triethyl-gallium and described
The parameter of the pulse mode (including pulsewidth, frequency etc.) of hydrogen intake in growth atmosphere is adapted, in growth multiple quantum wells
When the buffer layer 51 of luminescent layer, it is also necessary to by growth temperature adjustment between 750-950 DEG C, by operation revolving speed adjustment in 500-
Between 1200, by growth pressure adjustment between 100-500torr, the hydrogen in the growth atmosphere is in nitrogen/hydrogen/ammonia
Accounting in total tolerance is between 0.1-50%, gas distribution mutual matched under reasonable airflow model；
When growing the barrier layer 53 of multi-quantum well luminescence layer, need to adjust growth pressure between 100-500torr, it will
Revolving speed adjustment is operated between 500-1200, growth temperature adjusts between 750-950 DEG C, controls hydrogen in nitrogen/hydrogen/ammonia
Accounting in the total tolerance of gas is greater than 5%, gas distribution mutual matched under reasonable airflow model；
In step s 5, when growing multi-quantum well luminescence layer 5, the well layer 52 of the multi-quantum well luminescence layer is grown in institute
It states on the buffer layer 51 of multi-quantum well luminescence layer, the barrier layer 53 of the multi-quantum well luminescence layer is grown in the multiple quantum well light emitting
In the well layer 52 of layer；The sequentially period life of barrier layer 53 of the well layer 52 and the multi-quantum well luminescence layer of the multi-quantum well luminescence layer
It is long；
In step s 6, when growing the p type semiconductor layer 6, need by growth temperature adjust 620-1200 DEG C it
Between, by growth pressure adjustment between 100-600torr, V/III molar ratio is controlled between 200-6000, and the p-type is partly led
The growth thickness of body layer 6 controls between 10-100nm；
After epitaxial structures growth, epitaxial structure (epitaxial wafer) is through over cleaning, and deposition, lithography and etching etc. is subsequent to be added
Single chip is made in work technique.
In some embodiments of the present invention, when growing the multi-quantum well luminescence layer, high-purity hydrogen or nitrogen are used
Gas is as carrier gas, using trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia as gallium, aluminium, indium and nitrogen source,
It is adulterated using silane and two luxuriant magnesium respectively as N-type and p-type.
Fig. 1 is the epitaxial structure grown through the invention, from top to bottom successively includes: aluminium nitride plated film substrate 1,3D island
2,2D of layer two-dimensional layer 3, n type semiconductor layer 4, multi-quantum well luminescence layer 5, p type semiconductor layer 6.
Fig. 2 is the structural schematic diagram of multi-quantum well luminescence layer 5, the buffer layer 51 including multiple quantum well light emitting, multiple quantum wells
The well layer 52 of luminescent layer and the barrier layer 53 of multi-quantum well luminescence layer.
Fig. 4-5 is please referred to, the present embodiment further includes a kind of manufacturing method of micro-led device, including following step
It is rapid:
S101: the epitaxial structure of light-emitting diode is provided；Wherein, when providing the epitaxial structure of the light-emitting diode,
The manufacturing method of light-emitting diode epitaxial structure, comprising:
Substrate is provided；N type semiconductor layer is grown over the substrate；Multiple quantum wells is grown on the n type semiconductor layer
Luminescent layer；The growing P-type semiconductor layer in the multi-quantum well luminescence layer；The multi-quantum well luminescence layer includes multiple quantum wells hair
The buffer layer of photosphere, the well layer of multi-quantum well luminescence layer, the barrier layer of multi-quantum well luminescence layer；
Wherein, when growing the buffer layer of the multi-quantum well luminescence layer, hydrogen in triethyl-gallium and growth atmosphere
Intake is passed through in a pulsed mode, i.e., the flow of the described triethyl-gallium carries out pulse with the growth atmosphere of different hydrogen accounting and replaces
Growth, the hydrogen and nitrogen/hydrogen/ammonia total tolerance accounting in the growth atmosphere are between 0.1-50%, when growth
Operating pressure is between 100-500torr；And when the barrier layer of the growth multi-quantum well luminescence layer, hydrogen is in nitrogen/hydrogen/ammonia
Accounting in the total tolerance of gas is greater than 5%；The material of the substrate is not construed as limiting in this implementation, preferably aluminium nitride substrate；
S201: dividing the epitaxial structure of the light-emitting diode, to form multiple micro-led chips 8；?
Stealthy cutting method for example can be used when dividing the epitaxial structure of the light-emitting diode, in the present embodiment and obtain the miniature hair
The chip 8 of optical diode；
S301: the micro-led chip 8 is transferred to a substrate 7；The embodiment of the present invention substrate 7 is, for example,
Tft array substrate；The chip 8 of the light emitting diode is bonded on the substrate 7 by the present embodiment selection；
Wherein, the manufacturing method of the micro-led device in the present embodiment further includes；
It needs to grow contact layer on the p type semiconductor layer；Current extending is grown on the contact layer；Etch shape
At isolation channel, epitaxial structure of the isolation channel at least across the light-emitting diode；Fig. 4 does not embody the contact layer, described
Current extending and the isolation channel.
In conclusion the manufacturing method and its application of a kind of light-emitting diode epitaxial structure proposed by the present invention, are manufacturing
Optimize multi-quantum well luminescence layer when light-emitting diode epitaxial structure, specifically: in the buffer layer mistake of growth multi-quantum well luminescence layer
The intake of Cheng Zhong, the hydrogen in triethyl-gallium and growth atmosphere are passed through in a pulsed mode, the buffer layer of multi-quantum well luminescence layer
It grows in a pulsed mode, wherein the component of gallium is also to be changed according to pulse mode, which can reduce fracture
Valence link, impurity and defect etc. can obtain smooth, the high interface of clarity, reduce the defect or trap at interface, right in other words
There is certain repair at interface, and the trap that can improve multi-quantum well luminescence layer builds interface state, so that device performance is improved, because
The manufacturing method of light-emitting diode epitaxial structure can be applied in the manufacturing method of micro-led device by this.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle, those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed, such as features described above have similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Except for the technical features described in the specification, remaining technical characteristic is the known technology of those skilled in the art, is prominent
Innovative characteristics of the invention out, details are not described herein for remaining technical characteristic.
Claims (9)
1. a kind of manufacturing method of light-emitting diode epitaxial structure characterized by comprising
Substrate is provided；
N type semiconductor layer is grown over the substrate；
Multi-quantum well luminescence layer is grown on the n type semiconductor layer；
The growing P-type semiconductor layer in the multi-quantum well luminescence layer；
The multi-quantum well luminescence layer includes the buffer layer of multi-quantum well luminescence layer, the well layer of multi-quantum well luminescence layer, Multiple-quantum
The barrier layer of trap luminescent layer；
Wherein, when growing the buffer layer of the multi-quantum well luminescence layer, hydrogen in triethyl-gallium and growth atmosphere is passed through
Amount is passed through in a pulsed mode, i.e., the flow of the described triethyl-gallium carries out pulse with the growth atmosphere of different hydrogen accounting and replaces life
It is long, behaviour of the hydrogen and nitrogen/hydrogen/ammonia total tolerance accounting in the growth atmosphere between 0.1-50%, when growth
Make pressure between 100-500torr；And when the barrier layer of the growth multi-quantum well luminescence layer, hydrogen is in nitrogen/hydrogen/ammonia
Accounting in total tolerance is greater than 5%.
2. the manufacturing method according to claim 1, it is characterised in that: between the substrate and the n type semiconductor layer
Also grow 3D island layer and 2D two-dimensional layer.
3. manufacturing method according to claim 2, it is characterised in that: the 3D island layer is grown over the substrate, institute
It states 2D two-dimensional layer to be grown on the 3D island layer, the n type semiconductor layer is grown on the 2D two-dimensional layer.
4. manufacturing method according to claim 3, it is characterised in that: when growing the 3D island layer, be passed through triethyl group
After gallium, need to adjust growth temperature between 950-1200 DEG C, growth pressure is between 100-500torr, described in growth
When 2D two-dimensional layer, need to adjust growth temperature between 950-1200 DEG C, pressure adjusts between 100-600torr.
5. growing method according to claim 3, it is characterised in that: when growing n type semiconductor layer, need that temperature will be grown
Degree adjustment is at 950-1200 DEG C, and growth pressure adjusts between 100-600torr, and the n type semiconductor layer is located at the 2D bis-
It ties up on layer.
6. the manufacturing method according to claim 1, it is characterised in that: when growing the multi-quantum well luminescence layer, need
By growth temperature adjustment between 750-950 DEG C.
7. the manufacturing method according to claim 1, it is characterised in that: when growing P-type semiconductor layer, need that temperature will be grown
Degree is adjusted to 620-1200 DEG C, and growth pressure is between 100-600torr, and V/III mole of control is between 200-6000.
8. the manufacturing method according to claim 1, it is characterised in that: in the multi-quantum well luminescence layer, the volume
The barrier layer of the well layer of sub- trap luminescent layer and the multi-quantum well luminescence layer sequentially cycle growth.
9. a kind of manufacturing method of micro-led device, it is characterised in that: including,
The epitaxial structure of light-emitting diode is provided；
Divide the epitaxial structure of the light-emitting diode, to form multiple micro-led chips；
The micro-led chip is transferred on a substrate；
Wherein, when providing the epitaxial structure of the light-emitting diode, the manufacturing method of light-emitting diode epitaxial structure, comprising:
Substrate is provided；
N type semiconductor layer is grown over the substrate；
Multi-quantum well luminescence layer is grown on the n type semiconductor layer；
The growing P-type semiconductor layer in the multi-quantum well luminescence layer；
The multi-quantum well luminescence layer includes the buffer layer of multi-quantum well luminescence layer, the well layer of multi-quantum well luminescence layer, Multiple-quantum
The barrier layer of trap luminescent layer；
Wherein, when growing the buffer layer of the multi-quantum well luminescence layer, hydrogen in triethyl-gallium and growth atmosphere is passed through
Amount is passed through in a pulsed mode, i.e., the flow of the described triethyl-gallium carries out pulse with the growth atmosphere of different hydrogen accounting and replaces life
It is long, behaviour of the hydrogen and nitrogen/hydrogen/ammonia total tolerance accounting in the growth atmosphere between 0.1-50%, when growth
Make pressure between 100-500torr；And when the barrier layer of the growth multi-quantum well luminescence layer, hydrogen is in nitrogen/hydrogen/ammonia
Accounting in total tolerance is greater than 5%.
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Effective date of registration: 20210302 Address after: Room 110-7, building 3, 290 Xingci 1st Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province, 315336 Patentee after: Ningbo anxinmei Semiconductor Co.,Ltd. Address before: 230011 Industrial Park, Xinzhan District, Hefei City, Anhui Province Patentee before: HEFEI IRICO EPILIGHT TECHNOLOGY Co.,Ltd. |