CN109270720A - Tft array substrate and liquid crystal display - Google Patents
Tft array substrate and liquid crystal display Download PDFInfo
- Publication number
- CN109270720A CN109270720A CN201811188904.6A CN201811188904A CN109270720A CN 109270720 A CN109270720 A CN 109270720A CN 201811188904 A CN201811188904 A CN 201811188904A CN 109270720 A CN109270720 A CN 109270720A
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- insulating layer
- metal layer
- tft array
- touching signals
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- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000003491 array Methods 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 106
- 239000000463 material Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of tft array substrate and liquid crystal display, tft array substrates, comprising: substrate；Shading metal layer is set on the substrate；First insulating layer is set on the shading metal layer and the substrate；Semiconductor layer is set on first insulating layer；Second insulating layer is set on first insulating layer, the semiconductor layer and the touching signals line；Gate metal layer is set in the second insulating layer and is located at the shading metal layer；Third insulating layer is set in the second insulating layer and the gate metal layer；Source-drain electrode metal layer is set on the third insulating layer, and source-drain electrode metal layer includes touching signals line, source metal and drain metal；4th insulating layer is set on the source-drain electrode metal layer and the third insulating layer, the touch-control common electrode layer be set on the 4th insulating layer.
Description
Technical field
The present invention relates to field of liquid crystal display, and in particular to a kind of tft array substrate and liquid crystal display.
Background technique
Existing embedded touch display screen is all to be internally embedded touch sensible electric furnace in display screen, so that display screen is more
It is thin.It, will especially for touch sensor function is embedded in the tft array substrate of fringe field switching mode liquid crystal mesogens display
Common pattern of electrodesization processing is spaced touch-control sensing electrode.One layer metal shape of the touching signals line usually by newly increasing
At or there is electrode to be made with layer material with technique, however both methods exists and increases light shield quantity, and can reduce pixel list
The aperture opening ratio of member.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The object of the present invention is to provide a kind of tft array substrate and liquid crystal displays for this, and having reduces tft array substrate
Thickness improves the beneficial effect of pixel aperture ratio.
The embodiment of the invention provides a kind of tft array substrates, comprising:
Substrate；
Shading metal layer is set on the substrate；
First insulating layer is set on the shading metal layer and the substrate；
Semiconductor layer is set on first insulating layer；
Second insulating layer is set to first insulating layer, the semiconductor layer；
Gate metal layer is set in the second insulating layer and is located at the shading metal layer；
Third insulating layer is set in the second insulating layer and the gate metal layer；
Source-drain electrode metal layer is set on the third insulating layer, and source-drain electrode metal layer includes touching signals line, source electrode
Metal and drain metal；
4th insulating layer is set on the source-drain electrode metal layer and the third insulating layer, the touch-control it is public
Electrode layer is set on the 4th insulating layer；
Touch-control common electrode layer, be set to above first insulating layer, the touch-control common electrode layer include more
The rectangular metal layer of a rectangular array arrangement, the multiple rectangular metal layer are electrically connected with corresponding touching signals line respectively,
The touching signals line is connect with gating switch respectively, the gating switch respectively with the signal input pin of touch chip and
Grounding pin connection, when the gating switch connects the touching signals line and grounding pin, the rectangular metal layer conduct
Public electrode；When the touching signals line is connect by the gating switch with signal input pin, the rectangular metal layer conduct
Touch-control sensing electrode；
5th insulating layer is set on the Chu Kong common electrode layer and first insulating layer；
Pixel electrode layer is set on the 5th insulating layer, which includes that multiple rectangular arrays are set
The pixel electrode set.
In tft array substrate of the present invention, the 4th insulating layer is provided with multiple plated through-holes, the touch-control
Signal wire is electrically connected by plated through-hole with corresponding rectangular metal layer.
In tft array substrate of the present invention, the touching signals line is ITO metal wire.
In tft array substrate of the present invention, data line and scan line are additionally provided on the substrate.
Tft array substrate and liquid crystal display provided by the invention are by being arranged in the same of semiconductor layer for touching signals line
Layer, and touch-control sensing electrode is multiplexed with using public electrode, the thickness of tft array substrate is reduced, that improves pixel aperture ratio has
Beneficial effect, and touching signals line and source metal and drain metal will be set to same layer, a light shield shape can be passed through
At, it is possible to reduce light shield number.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the tft array substrate in the embodiment of the present invention.
Fig. 2 is a kind of circuit theory schematic diagram of the tft array substrate in the embodiment of the present invention.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In description of the invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Fig. 1 is please referred to, Fig. 1 is the structural schematic diagram of the tft array substrate in one embodiment of the invention.The tft array base
Plate, comprising: substrate 101, shading metal layer 102, touching signals line 103, the first insulating layer 104, semiconductor layer 105, second are exhausted
Edge layer 106, gate metal layer 107, third insulating layer 200, source-drain electrode metal layer 109, the 4th insulating layer 201, touch-control common electrical
Pole layer the 203, the 5th insulating layer 202, pixel electrode layer 24.
Wherein, which is glass substrate.
Wherein, which is set on substrate 101；The opaque metal material of the shading metal layer 102 is heavy
Product is formed.
Wherein, which is set on the shading metal layer 102 and substrate 101.First insulating layer
104 be buffer layer, and the materials such as silica, silicon nitride is used to deposit to be formed.
Wherein, which is set on first insulating layer 104；The semiconductor layer 105 using deposition, from
The techniques such as son injection are formed, and are the prior art, without excessive description.
Certainly, it is formed it is possible to further inject high concentration conductive ion using semiconductor.It can be in specific manufacturing process
Layer of semiconductor material layer is deposited on first insulating layer 104, is then patterned processing and is obtained the figure of semiconductor layer 105
Shape.
Wherein, which is set on the first insulating layer 104 and the semiconductor layer 105；Second insulation
Layer 106 is separation layer.It uses the materials such as silica, silicon nitride to deposit to be formed.
Wherein, which is set in the second insulating layer 106 and is located at the shading metal layer 102
Top.Gate metal layer 107 acquires metal material progress physical vapor depositing technology and light shield is made.
Wherein, which is set in the second insulating layer 106 and the gate metal layer 107；The
Three insulating layers 200 are interlayer dielectric layer.It uses the materials such as silica, silicon nitride to deposit to be formed.
Wherein, which is set on the third insulating layer 200；The source-drain electrode metal layer 109 includes
Source metal 109b, drain metal 109a and touching signals line 103, source metal are electrically connected with semiconductor layer 105.The drain electrode
Metal is electrically connected with pixel electrode layer 24.The touching signals line 103 has more.
Wherein, the 4th insulating layer 201 is set on the source-drain electrode metal layer 109 and the third insulating layer 200,
4th insulating layer 201 is flatness layer.The thickness of 4th insulating layer 201 is greater than the first insulating layer, second insulating layer 106, Yi Ji
The thickness of three insulating layers.4th insulating layer 201 deposits to be formed using the materials such as silica, silicon nitride.Plated through-hole is presented greatly
Under small shape.
Referring to Fig. 2, wherein the touch-control common electrode layer 203 be set on the 4th insulating layer 201.Touching
Control common electrode layer 203.Touch-control common electrode layer 203 include multiple rectangular metal layers 2031, the multiple rectangular metal layer
2031 rectangular arrays are intervally arranged, and multiple rectangular metal layers are electrically connected with corresponding touching signals line respectively, the touch-control letter
Number line 103 is connect with gating switch 60 respectively, the gating switch 60 respectively with the signal input pin of touch chip and connect
The connection of ground pin, when the gating switch connects the touching signals line and grounding pin, the rectangular metal layer is as public
Common electrode；When the touching signals line is connect by the gating switch with signal input pin, the rectangular metal layer is as touching
Control induction electrode.
Wherein, the 5th insulating layer 202 is set to the Chu Kong common electrode layer 203 and the 4th insulating layer 201
On；It uses the materials such as silica, silicon nitride to deposit to be formed.
Wherein, which is set on the 5th insulating layer 202.The pixel electrode layer 24 includes multiple pictures
Plain electrode.
Specifically, the 4th insulating layer 201 is provided with multiple plated through-hole a, and the touching signals line 103 passes through institute's metal
Change hole a to be electrically connected with corresponding rectangular metal layer.
The present invention also provides a kind of liquid crystal displays, including above-mentioned tft array substrate.
Tft array substrate and liquid crystal display provided by the invention are by being arranged in the same of semiconductor layer for touching signals line
Layer, and touch-control sensing electrode is multiplexed with using public electrode, the thickness of tft array substrate is reduced, that improves pixel aperture ratio has
Beneficial effect, and touching signals line and source metal and drain metal will be set to same layer, a light shield shape can be passed through
At, it is possible to reduce light shield number.
In the description of this specification, reference term " embodiment ", " certain embodiments ", " schematically implementation
What the description of mode ", " example ", " specific example " or " some examples " etc. meant to describe in conjunction with the embodiment or example
Particular features, structures, materials, or characteristics are contained at least one embodiment or example of the invention.In this specification
In, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific spy of description
Sign, structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (6)
1. a kind of tft array substrate characterized by comprising
Substrate；
Shading metal layer is set on the substrate；
First insulating layer is set on the shading metal layer and the substrate；
Semiconductor layer is set on first insulating layer；
Second insulating layer is set to first insulating layer, the semiconductor layer；
Gate metal layer is set in the second insulating layer and is located at the shading metal layer；
Third insulating layer is set in the second insulating layer and the gate metal layer；
Source-drain electrode metal layer is set on the third insulating layer, and source-drain electrode metal layer includes touching signals line, source metal
And drain metal；
4th insulating layer is set on the source-drain electrode metal layer and the third insulating layer, the touch-control public electrode
Layer is set on the 4th insulating layer；
Touch-control common electrode layer, be set to above first insulating layer, the touch-control common electrode layer to include multiple be in
The rectangular metal layer of rectangular array arrangement, the multiple rectangular metal layer is electrically connected with corresponding touching signals line respectively, described
Touching signals line is connect with gating switch respectively, the gating switch respectively with the signal input pin of touch chip and ground connection
Pin connection, when the gating switch connects the touching signals line and grounding pin, the rectangular metal layer is as public
Electrode；When the touching signals line is connect by the gating switch with signal input pin, the rectangular metal layer is as touch-control
Induction electrode；
5th insulating layer is set on the Chu Kong common electrode layer and first insulating layer；
Pixel electrode layer is set on the 5th insulating layer, which includes what multiple rectangular arrays were arranged
Pixel electrode.
2. tft array substrate according to claim 1, which is characterized in that the 4th insulating layer is provided with multiple metals
Change hole, the touching signals line is electrically connected by plated through-hole with corresponding rectangular metal layer.
3. tft array substrate according to claim 1, which is characterized in that the touching signals line is ITO metal wire.
4. tft array substrate according to claim 1, which is characterized in that be additionally provided with data line on the substrate and sweep
Retouch line.
5. tft array substrate according to claim 1, which is characterized in that the plated through-hole is in a shape of big-top and small-bottom.
6. a kind of liquid crystal display, which is characterized in that including the described in any item tft array substrates of claim 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811188904.6A CN109270720A (en) | 2018-10-12 | 2018-10-12 | Tft array substrate and liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811188904.6A CN109270720A (en) | 2018-10-12 | 2018-10-12 | Tft array substrate and liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109270720A true CN109270720A (en) | 2019-01-25 |
Family
ID=65197135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811188904.6A Withdrawn CN109270720A (en) | 2018-10-12 | 2018-10-12 | Tft array substrate and liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109270720A (en) |
-
2018
- 2018-10-12 CN CN201811188904.6A patent/CN109270720A/en not_active Withdrawn
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Application publication date: 20190125 |