CN109267021A - A kind of preparation method of long-life dilval sputtering target material - Google Patents
A kind of preparation method of long-life dilval sputtering target material Download PDFInfo
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- CN109267021A CN109267021A CN201811480260.8A CN201811480260A CN109267021A CN 109267021 A CN109267021 A CN 109267021A CN 201811480260 A CN201811480260 A CN 201811480260A CN 109267021 A CN109267021 A CN 109267021A
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- target
- sputtering
- sputter
- target material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to target preparation technical fields, and in particular to a kind of preparation method and its product of long-life dilval sputtering target material.The present invention reduces the magnetic conductivity of target, and then be designed to target material structure, increases sputter area thickness, prepare long-life dilval sputtering target material by deforming to target blankss regional area.Preparation method of the present invention is simple, can obviously increase target service life, and improvement prepares uniformity of film, improves target utilization, reduces cost.
Description
Technical field
The invention belongs to target preparation technical fields, and in particular to a kind of preparation side of long-life dilval sputtering target material
Method.
Background technique
Magnetron sputtering refers to that electronics collides under the action of electric field with ar atmo, its ionization is made to produce Ar+, Ar+
Accelerate to fly to cathode target under electric field action, and target surface is bombarded with high-energy, sputters target, the target atom sputtered
Or molecule deposition forms film on substrate.Magnetically controlled sputter method has film/base junction resultant force good, and film forming is fine and close, uniformity of film
The advantages that good, magnetron sputtering technique is widely used in field of vacuum coating.Ferronickel system permalloy soft magnetic materials is due to having
Excellent magnetic property, pole part, highly sensitive transformer, novel sensor, the magnetic recording for being widely used in electromagnetic lens are read
Magnetic head, giant magnetoresistance random access memory and harmonic filter etc., and prepare device have low in energy consumption, high sensitivity, it is small in size,
The series of advantages such as reliability height.
Since dilval is soft magnetic materials, the magnetism that itself is generated in magnetic field has the function of to magnetic field shielding, meeting
Lead to not normally sputter.It is stronger therefore, it is necessary to guarantee that sputtering target material has sputtering source magnetic field by reasonable preparation process
Permeability.Generally when implementing sputtering, since the magnetic conductivity of magnetic target is high, so that the magnetic line of force on target surface is few, lead to sputtering speed
Rate is lower, or even cannot normally sputter.It can only be made thin based on this reason dilval magnetism target, thickness generally exists
2.5mm and following.
Patent US6988306 improves the saturating magnetic uniformity of target by changing target rim to the thickness at center, in turn
Increase target service life, but service life increase in this way is smaller；Patent US2014/0318947, US4401546, US4412907
Target is divided into multi-section point with US5827414, there are certain gap or grooves between each section, to increase the saturating magnetic of target material surface
Rate, but back veneer material may be splashed on substrate at gap, or the anti-deposition materials accumulated at gap or groove can splash
It is mapped on substrate and generates serious Particle, in addition, the processing and manufacturing difficulty of target is big；Patent US6312574 is to increase target
Material magnetic susceptibility beats some blind holes in target as sputter face, although will increase target life, can also generate serious
Particle.To solve the problems, such as that dilval target magnetic conductivity is high, the present invention provides a kind of long-life dilval sputtering target
The preparation method of material can reduce the magnetic conductivity of target, improve target magnetic susceptibility, hence it is evident that increase target service life, improve system
Standby uniformity of film, improves target utilization, reduces cost.
Summary of the invention
The present invention provides a kind of long-life dilval sputtering target material, specific technical solution is as follows:
A kind of preparation method of long-life dilval sputtering target material, the sputter area in target as sputter face splash target original
It penetrates face thickness and increases 0.5-2mm, the area that thickness increases region is greater than target original sputter area, and increases the edge of thickness area
It is connect between target original sputter area in ramped shaped or arc-shaped.Target as sputter face non-sputtered region is with certain deflection
Deformation states.The groove of certain size is processed at the target deformed region back side, can further improve target sputtering zone thickness
2-4mm。
Preferably, target as sputter face sputter area is with a thickness of 3.0-8.5mm.
Preferably, the thickness increases region greater than the practical sputter area of target.
Preferably, target as sputter face non-sputtered region has the deformation states of certain deflection, deflection 1%-
20%.
Preferably, the target is solder type target.
The long-life dilval sputtering target material being prepared by above method, sputter face non-sputtered region magnetic conductivity
Low, magnetic susceptibility is high, hence it is evident that increases target service life, improvement prepares uniformity of film, improves target utilization, reduces cost.
The invention has the benefit that
Compared with prior art, the present invention extends target life by the thickness of increase ferromagnetic sputter target material sputter area；
By reducing the magnetic conductivity of target as sputter face non-sputtered region and to the design of target material structure, the magnetic susceptibility of target is improved, to increase
Add sputter rate.The present invention solves the magnetic sputtering target material such as dilval in sputtering process, and service life is shorter, production
The problem of frequently replacing target and high production cost in the process.
Detailed description of the invention
Fig. 1 is 1 plane dilval sputtering target material profile of comparative example and internal magnetic field lines distribution schematic diagram.
Fig. 2 is 1 plane dilval sputtering target material of comparative example sputtering consumption profile and internal magnetic field lines distribution schematic diagram.
Fig. 3 is the long-life dilval sputtering target material profile and internal magnetic field lines distribution schematic diagram of the embodiment of the present invention 1.
Fig. 4 is the long-life dilval sputtering target material deformed area and sputtering zone distribution schematic diagram of the embodiment of the present invention 1.
Fig. 5 is the long-life dilval sputtering target material sputtering consumption profile and internal magnetic field lines point of the embodiment of the present invention 1
Cloth schematic diagram.
Fig. 6 is the long-life dilval sputtering target material profile and internal magnetic field lines distribution schematic diagram of the embodiment of the present invention 2.
Fig. 7 is the long-life dilval sputtering target material deformed area and sputtering zone distribution schematic diagram of the embodiment of the present invention 2.
Fig. 8 is the long-life dilval sputtering target material sputtering consumption profile and internal magnetic field lines point of the embodiment of the present invention 2
Cloth schematic diagram.
Specific embodiment
The present invention provides a kind of extension ferromagnetic sputter target material service life, the method that improvement prepares uniformity of film, tool
Body embodiment is that thickness on the basis of existing target, by increasing target sputtering zone improves target life.In general, magnetic
Property sputtering target material sputter face is plane, and thinner thickness, and during target as sputter, the main sputter area of target is sputtered
Ring is gradually reduced with the progress of sputtering in the thickness of sputtering ring position, makes to sputter the magnetic field strength increase that ring position penetrates,
Sputter rate in the position increases, and causes the position target quickly to be punched, so that the service life of ferromagnetic sputter target material is usual
It is shorter, as shown in Figure 1.
By improving to target sputtering zone thickness, the purpose for extending magnetic target service life can achieve.But
It is that the increase meeting of thickness causes target as sputter rate lower, or even cannot normally sputter so that target magnetic susceptibility substantially reduces.
At this moment the magnetic conductivity by reducing target non-sputtered region is also needed, the magnetic susceptibility of target material surface is improved, guarantees target as sputter speed
Rate.Other non-sputtered region sizes remain unchanged, such as the length and width of target, avoid the installation and sputtering performance that influence target.Target
The range that material sputter area thickeies has to be larger than practical sputter area shown in Fig. 2, if thickening range is less than this region, influences
The uniformity of target as sputter film thickness, or even paradoxical discharge phenomenon may be generated in step wedge angle, influence sputtering performance.
Below by drawings and examples, the present invention will be further described, but is not meant to the scope of the present invention
Limitation.
Embodiment 1
Fig. 3 is the long-life dilval sputtering target material profile and internal magnetic field lines distribution schematic diagram of the embodiment of the present invention 1.
Fig. 4 is the long-life dilval sputtering target material deformed area and sputtering zone distribution schematic diagram of the embodiment of the present invention 1.The present invention is only right
Target as sputter face structure and materials behavior improve, target as sputter face outer diameter (or length and width) size and other sizes with it is existing
Target (Fig. 1) is identical.Target life is improved by increasing thickness in target sputtering zone, increases the original that thickness area is greater than target
Sputter area, non-sputtered region thickness remain unchanged, and materials behavior is changed to 15% deformation states by perfect recrystallization state, with drop
The magnetic conductivity of low target improves the magnetic susceptibility of target material surface.The thickness of sputter area becomes 4mm from 2.0mm.Sputter area with it is non-
Sputter area is connected by linear ramp.
Fig. 5 is the long-life dilval sputtering target material sputtering consumption profile and internal magnetic field lines point of the embodiment of the present invention 1
Cloth schematic diagram, the sputter face before sputtering target material is consumed after line segment profile A5 expression improves, curved section B5 indicate that sputtering target material exists
Sputtering technology be consumed after sputter face, straightway C5 indicate sputtering target material cooling surface.Straightway A5 and curved section B5 is surrounded
The cartographic represenation of area sputtering target material part that sputter face is consumed after sputtering technology (i.e. sputtering target material effective use part), straight line
The sputter face for the cartographic represenation of area sputtering target material that section C5 and curved section B5 is surrounded remaining part after sputtering technology.Improved length
The service life of service life sputtering target material improves 50% or more.
Embodiment 2
Fig. 6 is the long-life dilval sputtering target material profile and internal magnetic field lines distribution schematic diagram of the embodiment of the present invention 2.
Fig. 7 is the long-life dilval sputtering target material deformed area and sputtering zone distribution schematic diagram of the embodiment of the present invention 2.The present invention is only right
Target material structure and materials behavior improve, and target as sputter face outer diameter (or length and width) size and other sizes and existing target (are schemed
1) identical.Target life is improved by increasing thickness in target sputtering zone, increases the former sputtering zone that thickness area is greater than target
Domain, meanwhile, non-sputtered region thickness is thinned, and materials behavior is changed to 20% deformation states by perfect recrystallization state, to reduce target
The magnetic conductivity of material improves the magnetic susceptibility of target material surface.The thickness of sputter area becomes 6mm from 2.0mm.Sputter area with it is non-sputtered
Region is connected by linear ramp.
Fig. 8 is the long-life dilval sputtering target material sputtering consumption profile and internal magnetic field lines point of the embodiment of the present invention 2
Cloth schematic diagram, the sputter face before sputtering target material is consumed after line segment profile A8 expression improves, curved section B8 indicate that sputtering target material exists
Sputtering technology be consumed after sputter face, straightway C8 indicate sputtering target material cooling surface.Straightway A8 and curved section B8 is surrounded
The cartographic represenation of area sputtering target material part that sputter face is consumed after sputtering technology (i.e. sputtering target material effective use part), straight line
The sputter face for the cartographic represenation of area sputtering target material that section C8 and curved section B8 is surrounded remaining part after sputtering technology.Improved length
The service life of service life sputtering target material improves 1.5 times or more.
Comparative example 1
Fig. 1 is the plane dilval sputtering target material profile and internal magnetic field lines distribution schematic diagram of comparative example 1.Sputter face is each
Area thickness is identical, is 2.0mm.It is more through the magnetic line of force of target since thickness is relatively thin.
Fig. 2 is the plane dilval sputtering target material sputtering consumption profile and internal magnetic field lines distribution schematic diagram of comparative example 1,
Line segment profile A2 indicate sputtering target material be consumed before sputter face, curved section B2 indicate sputtering target material after sputtering technology is consumed
Sputter face, straightway C2 indicate sputtering target material cooling surface.The cartographic represenation of area sputtering target that straightway A2 and curved section B2 is surrounded
The part (i.e. sputtering target material effective use part) that material sputter face after sputtering technology is consumed, straightway C2 and curved section B2 packet
The sputter face of the cartographic represenation of area sputtering target material enclosed remaining part after sputtering technology.Due to plane dilval sputtering target material
Thinner thickness, service life are lower.
Table 1 is dilval target magnetic conductivity and uniformity of film in embodiment and comparative example, is implemented as can be seen from Table 1
Magnetic conductivity in example is substantially reduced, and is prepared film gauge uniformity and is also significantly improved, reaches requirement.
Dilval target magnetic conductivity and uniformity of film in 1 embodiment and comparative example of table
Technical solution of the present invention is described in detail in above-described embodiment.It is apparent that the present invention is not limited being retouched
The embodiment stated.Based on the embodiments of the present invention, those skilled in the art can also make a variety of variations accordingly, but appoint
What is equal with the present invention or similar variation shall fall within the protection scope of the present invention.
Claims (6)
1. a kind of preparation method of long-life dilval sputtering target material, which is characterized in that the sputter area in target as sputter face
Target original sputtering face thickness is increased into 0.5-2mm, the thickness increases region area and is greater than target original sputter area, and increases thick
It spends between the edge and target original sputter area in region and is connected in ramped shaped or arc-shaped；The non-sputtered area in the target as sputter face
Domain is the deformation states with certain deflection；The groove of certain size is processed at the target deformed region back side, is further increased
Target sputtering zone thickness 2-4mm.
2. preparation method as described in claim 1, which is characterized in that the sputter area in the target as sputter face is with a thickness of 3.0-
8.5mm。
3. preparation method as described in claim 1, which is characterized in that the thickness increases region and is greater than the practical sputtering zone of target
Domain.
4. preparation method as claimed in claim 3, which is characterized in that the non-sputtered region in the target as sputter face has certain
The deformation states of deflection, deflection 1%-20%.
5. preparation method as described in claim 1, which is characterized in that the target is solder type target.
6. the long-life dilval sputtering target material that any one of Claims 1 to 5 preparation method obtains, which is characterized in that described
The non-sputtered region magnetic conductivity in target as sputter face is low, and magnetic susceptibility is high.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811480260.8A CN109267021A (en) | 2018-12-05 | 2018-12-05 | A kind of preparation method of long-life dilval sputtering target material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811480260.8A CN109267021A (en) | 2018-12-05 | 2018-12-05 | A kind of preparation method of long-life dilval sputtering target material |
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| CN109267021A true CN109267021A (en) | 2019-01-25 |
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| CN201811480260.8A Pending CN109267021A (en) | 2018-12-05 | 2018-12-05 | A kind of preparation method of long-life dilval sputtering target material |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6190516B1 (en) * | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
| CN101550536A (en) * | 2008-03-31 | 2009-10-07 | 沈阳金纳新材料有限公司 | High-purity nickel target for magnetron sputtering |
-
2018
- 2018-12-05 CN CN201811480260.8A patent/CN109267021A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6190516B1 (en) * | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
| CN101550536A (en) * | 2008-03-31 | 2009-10-07 | 沈阳金纳新材料有限公司 | High-purity nickel target for magnetron sputtering |
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