CN205062168U - Magnetism target - Google Patents
Magnetism target Download PDFInfo
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- CN205062168U CN205062168U CN201520855329.6U CN201520855329U CN205062168U CN 205062168 U CN205062168 U CN 205062168U CN 201520855329 U CN201520855329 U CN 201520855329U CN 205062168 U CN205062168 U CN 205062168U
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Abstract
The utility model provides a magnetism target, magnetism target can NOT AND magnetism target sharing magnetron sputtering system, its central africa magnetism target is circular plane target, including sputtering target and backplate. Magnetism target passes through non - magnetism target 1) attenuate sputter target, 2 )To sputter the face and the back makes the sphere into by the plane to the face of weld that reaches the backplate also changes interior sphere into by the plane, and laminates completely with the back of sputtering the target, perhaps further follow the cooling surface direction attenuate backplate of backplate main part etc, obtain the magnetism target after the deformation, the sputtering system that this magnetism target used NOT AND magnetism target to share sputters, and gained sputtered film's thickness homogeneity reaches within 2.0%.
Description
Technical field
The utility model relates to sputtering target material technical field, particularly relates to a kind of magnetic control spattering target.
Background technology
Magnetron sputtering technique has developed into one of technology main in the production of industrial plated film.Magnetron sputtering be utilize Magnetic control glow discharge to produce plasma body to pound the particle of target material surface and to make it deposit to substrate surface to complete film process, therefore, magnetron sputtering film forming quality relies on the homogeneity of target material surface Distribution of Magnetic Field significantly.
The target of magnetron sputtering has non magnetic and magnetic two kinds.Ferromagnetic sputter target compares non magnetic target, due to the high permeability had, magnetic control magnetic field is made to define loop line in target, major part magnetic field is passed through from magnetic target inside, thus reducing the magnetic field on target surface, serious magnetic shielding even makes target material surface cannot carry out magnetron sputtering because magnetic field is too small.And along with the fast development of electronic information technology, the use of magnetic target widely, as W metal conventional in semiconductor integrated circuit or its alloy; At magneticmetal and the alloy thereof such as Fe, Co of electronics and computer realm widespread use.
In the industrial production, often can run into the target stand of a sputtering machine table only for some specific Target Design, usually design limit of consideration in as aluminium target because it is very general as top-level metallic, electrode etc. in semi-conductor, unicircuit.But in the production or research of reality, if need to carry out the target as sputter outside this board design, especially the sputtering of magnetic target, generally believe that magnetic target can not be placed directly on the target stand of non magnetic target at present, because the shielding effect of magnetic target to magnetic field makes, in magnetic target Surface field insufficient strength, cannot complete sputtering.Therefore, at this moment often need to use new magnetic control sputtering system, or redesign sputter cathode in original sputtering system, use specific target stand, renewal cost is high, the cycle is long.Iff by changing Target Design, making in same sputtering system, use same target stand can realize non magnetic and sputtering that is magnetic target, then sputtering different films, only needing to change target, greatly improve the utilization ratio of board, reduce production cost.
Summary of the invention
The utility model completes based on above prior art basis, its object is to: according to existing non magnetic target, by changing Target Design, obtaining magnetic target, and enabling this magnetic target in original sputtering system, use same target stand carry out installing and realize uniform sputter film forming.
The utility model provides a kind of magnetic target, and described magnetic target can share magnetic control sputtering system with non magnetic target, and described shared magnetic control sputtering system comprises target stand, and described target stand comprises magnet; Described non magnetic target comprises sputtering target and the backboard in order to support sputtering target; Sputtering target is oblate cylindricality, comprises the sputter face of rounded plane and the sputtering target back side relative with sputter face; Backboard comprises the main part and the main peripheral rim portion playing fixed action that support sputtering target, and backboard is pasted integral by face of weld and sputtering target, and the backboard inwall relative with face of weld forms cooling surface, and cooling surface is circular flat; Described magnetic target carries out following change in shape by described non magnetic target and is formed: 1) thinning sputtering target; And 2) make the sputter face of sputtering target and the back side thereof into sphere by plane, and sputter face is completely parallel with the back side of sputtering target, meanwhile, the face of weld of back plate main body part changes Internal Spherical Surface into by the plane of non magnetic target, and fits completely with the back side of sputtering target.
Further, the total height of described non magnetic target is 46.10 ~ 48.60m, the thickness of its sputtering target is 2.9 ~ 3.1mm, and backboard peripheral rim portion height is 3.92 ~ 24.72mm, and cooling surface is 22.03 ~ 22.43mm to the vertical range of the bottom of backboard peripheral rim portion.
Further, described change in shape 1) in the thinning of thinning sputtering target be of a size of 0.4 ~ 0.6mm; 2) internal diameter forming the sputter face after sphere in is 1026 ~ 1411mm.
Further, described change in shape also comprises 3) from the thinning backboard in cooling surface direction of back plate main body part; And 4) by thinning for backboard peripheral rim portion.
Further, described change in shape 1) in the thinning of thinning sputtering target be of a size of 0.4 ~ 0.6mm; 2) internal diameter forming the sputter face after sphere in is 2210 ~ 2336mm; 3) in, the thickness thinning of thinning backboard is 10.75 ~ 10.79mm; 4) the thinning 5.90 ~ 6.02mm of mesonotal shield peripheral rim portion.
Preferably, the sputtering target of described non magnetic target is aluminium target; The sputtering target of described magnetic target is NiPt alloys target or Ni metallic target.
Magnetic target provided by the utility model, by on the basis of original non magnetic Target Design, adjust original target shape or size acquisition, method is easy, and in same sputtering system, use same target stand can realize the sputtering of original non magnetic target and new magnetic target, greatly improve the utilization ratio of board, reduce production cost.And use the magnetic control sputtering system shared with non magnetic target, do not change at target stand, magnet in target stand sputters identical, the thickness evenness that the magnetic target of the utility model design sputters on base material is less than 2%, meets semi-conductor, integrated circuit (IC)-components completely as the connection metal even service requirements of barrier metal.
Accompanying drawing explanation
Fig. 1 is existing non magnetic circular flat target cross sectional representation.
Fig. 2 is the target stand schematic diagram that the utility model embodiment uses.
Fig. 3 is the magnetic target cross sectional representation of the utility model embodiment 1.
Fig. 4 is the magnetic target cross sectional representation of the utility model embodiment 2.
Wherein in Fig. 1, Fig. 3 and Fig. 4,1 is sputtering target, 1a is the sputter face of sputtering target, and 1b is the sputtering target back side, and 2 is backboard, 21 is back plate main body part, 22 is backboard peripheral rim portion, and 2a is the face of weld of backboard, and 2b is the cooling surface of backboard, 2C is the bottom of backboard peripheral rim portion, and R is the inside radius of sputter face.
Wherein in Fig. 2,1 is rotating mechanism, and 2 is magnet, and 3 is sputtering target open holes.
Embodiment
At present, the target that magnetron sputtering board is conventional has rectangle, square, circular target, the utility model is for circular target, on original non magnetic circular flat target basis, through the deformation design of target, realize the purpose of this utility model: in same sputtering system, use same target stand can realize the sputtering of original non magnetic target and new magnetic target.
Fig. 1 is the diagrammatic cross-section of existing circular flat sputtering target material.As shown in Figure 1, this circular flat sputtering target material comprises sputtering target 1 and the backboard 2 in order to support sputtering target; Sputtering target 1 is oblate cylindricality, its sputter face 1a be sputtering time plasma body bombardment face, be circular flat, that relative with its sputter face is sputtering target back side 1b; The scope of sputtering target 1 thickness H1 is 2.9 ~ 3.1mm, such as 3mm; Backboard 2 comprises the main part 21 and the main peripheral rim portion 22 playing fixed action that support sputtering target, backboard 2 is pasted integral by the back side 1b of face of weld 2a and sputtering target 1, the inwall of the backboard 2 relative with face of weld forms cooling surface 2b, and cooling surface is circular flat; Scope 23.92 ~ the 24.72mm of backboard peripheral rim portion 22 height h, such as 24.32mm; The vertical range H2 of cooling surface 2b to the bottom 2c of backboard peripheral rim portion 22 is 22.03 ~ 22.43mm, such as 22.23mm; The height overall H scope of whole circular flat sputtering target material is 46.10 ~ 48.60mm, such as 47.40mm.
The material making the sputtering target of existing circular flat sputtering target material is above that non magnetic sputter material is as the metal such as highly purified aluminium, Cu, Pt.The utility model adopts aluminium target to be described in embodiment below.
The sputtering system that embodiment of the present utility model adopts is the MRC sputtering machine table used at present widely, and as shown in Figure 2, the type target stand is also that industry sputtering machine table generally uses to its target stand, and centre is rotating mechanism 1; Magnet 2 is arranged on the both sides of target stand, and the magnetic core of magnet is S pole, and outer magnetic ring is N pole, and during work, rotating mechanism band moving magnet rotates; The center of target stand and outside are respectively equipped with the open holes 3 corresponding with target.Be arranged on target stand by rafifinal target by such as Fig. 1 design and sputter, it sputters on the base material that diameter is 100mm ~ 150mm, and in the thickness of sputtered film or the sheet of resistivity, homogeneity can reach within 2.5%.According to such as Fig. 1 existing aluminium circular flat target, duplicately make NiPt alloys target, be arranged on same sputtering system and as on the target stand of Fig. 2, use same model magnet, because NiPt alloys target is magnetic target, serious magnetic shielding make target material surface because of magnetic field too small, can not the starting the arc, and cannot magnetron sputtering be completed.
For solving this problem, the utility model, on the basis of original target, has carried out the redesign of target, to realize the purpose of this utility model.Below in conjunction with accompanying drawing, the utility model is described in further detail.
Embodiment 1
The material of the sputtering target of magnetic target is magneticsubstance NiPt target (Ni content 95%, Pt content 5%), and on the basis of the original aluminium circular flat target shown in Fig. 1, carried out following adjustment, the NiPt magneticalloy target after redesign as shown in Figure 3.
1) thinning sputtering target 0.4 ~ 0.6mm, the thickness H1 of such as the present embodiment sputtering target 1 reduces to 2.5mm by the 3mm of original aluminium target.The reason done like this is to carry out magnetic target certain thinning, and the magnetic target made can not armoured magnetic field completely, if meet part magnetic flux like this by saturated for magnetic target, remaining magnetic flux will pass through from target material surface, reach the requirement of magnetron sputtering.But because in actual sputter procedure, magnetic field is not evenly distributed in target material surface, if be only use the method, make the weak position of target material surface magneticstrength also can reach the magnetic flux meeting sputtering, the thickness needs continuation increase that magnetic target is thinning, the magnetic target obtained like this is very thin, and its sputter life significantly reduces.Therefore, the present embodiment, for the magneticstrength of the weak position of local enhancement target material surface magneticstrength, carries out next step improvement.
2) can be seen by Fig. 2, the center of target stand is magnet rotating mechanism, and magnet is placed on target stand both sides; Target is arranged on target stand, and its central axis is overlapping with magnet rotating mechanism.Therefore, the Surface field of circular target central position is more weak relative to other positions of target material surface.This example as shown in Figure 3, makes the sputter face 1a of sputtering target 1 and back side 1b thereof into sphere by plane, and sputter face 1a is completely parallel with the back side 1b of sputtering target, and the internal diameter R scope of sputter face 1a is 1026 ~ 1411mm, and such as the present embodiment R is 1218.5mm.Accordingly, the plane that the face of weld 2a of backboard 2 main part is also original as shown in Figure 1 changes Internal Spherical Surface into, and fits completely with the back side 1b of sputtering target.Like this, decrease the center of target material surface and the distance in magnetic field, enhance the magneticstrength of this position.
The present embodiment is according to the NiPt alloy magnetic target manufacturing and designing out of such as Fig. 3, be arranged on the original sputtering system the same with aluminium target and target stand, and use the magnet of same model, the base material of diameter 150mm sputters, in the substrate sheets of sputtering, thickness, resistivity evenness can reach within 2.0%, meet the uniformity requirement of the devices such as unicircuit/semi-conductor as the barrier metal of connection metal, even high request completely.
Embodiment 2
The present embodiment with magnetic target NiPt alloys target (Ni content 95%, Pt content 5%), is still example, and on the basis of the original aluminium circular flat target shown in Fig. 1, carried out following adjustment, the NiPt magneticalloy target after redesign as shown in Figure 4.
1) in this part of the overall Adjusted Option of the present embodiment and embodiment 1 1) part is just the same, and the thickness H1 of sputtering target 1 is reduced to 2.5mm by the 3mm of original aluminium target.
2) this part of the overall Adjusted Option of the present embodiment is with in embodiment 1 2) method is the same, unlike, the internal diameter R scope of last sputter face 1a is R2210 ~ R2336mm, and such as the present embodiment have employed R2273mm.Different from embodiment 1, the present embodiment increases sputter face R in this part, the sphere that the R of so relative embodiment 1 is less, more simple in target processing.But the magneticstrength being so also not enough to strengthen target centre of surface reaches the base material thickness homogeneity sputtered and meets manufacturing technique requirent.
3) be the Surface field strengthening circular target central position further, make whole target material surface Distribution of Magnetic Field even, also the thickness evenness of sputtering is improved further, above 1) 2) basis on, from cooling surface 2b direction, the thinning backboard 2 of backboard 2 main part 21, thickness thinning scope is 10.75 ~ 10.79mm, the thinning backboard 10.77mm of such as the present embodiment; Like this, make cooling surface 2b add 10.77mm to the vertical range H2 of the bottom 2c of backboard peripheral rim portion 22, H2 is increased to 33mm by 22.23 of original aluminium target simultaneously.That is: the groove part degree of depth of being encircled a city by cooling surface 2b and backboard peripheral rim portion 22 adds too, and this groove location arranges the cooling system position of sputtering target material, and it is too much that groove increases the degree of depth, easily causes cooling system to seal bad.Therefore, meanwhile, by thinning for backboard peripheral rim portion 22 5.90 ~ 6.02mm, such as, in the present embodiment, its height h is by the thinning 5.96mm to 18.36mm of original 24.32mm, like this, finally if the H2 in Fig. 4 is 27.04mm.Like this, by this design, decrease the center of target material surface and the distance in magnetic field, enhance the magneticstrength of this position, make target material surface magnetic field distribution more even.
The present embodiment is according to the NiPt alloy magnetic target manufacturing and designing out of such as Fig. 4, be arranged on the original sputtering system the same with aluminium target and target stand, use identical magnet model, the base material of diameter 150mm sputters, in the substrate sheets of sputtering, thickness, resistivity evenness can reach within 1.8%, meet the uniformity requirement of the devices such as unicircuit/semi-conductor as the barrier metal of connection metal, even high request completely.
Contriver of the present utility model continues research, find the material of magnetic target in above embodiment 1 and 2 to be replaced by the NiPt alloy target material (Ni content changes into 30%, 60%, 70% etc. by 95%) of other content or make high-purity Ni metallic target into, these magnetic targets are according to the design of embodiment 1 or embodiment 2, on the sputtering system that also can use at original aluminium target and sputtering target stand, same magnet sputter, in the substrate sheets of sputtering, thickness evenness all can reach within 2%.
Equally, on other targets such as rectangle, by similar deformation design, also same effect can be reached.Therefore, the above will be only preferred embodiment of the present utility model, not do any pro forma restriction to the utility model.Any those of ordinary skill in the art, do not departing under technical solutions of the utility model ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solutions of the utility model, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from the technical solution of the utility model, according to technical spirit of the present utility model to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solutions of the utility model protection.
Claims (7)
1. a magnetic target, is characterized in that: described magnetic target can share magnetic control sputtering system with non magnetic target, and described shared magnetic control sputtering system comprises target stand, and described target stand comprises magnet;
Described non magnetic target comprises sputtering target and the backboard in order to support sputtering target; Sputtering target is oblate cylindricality, comprises the sputter face of rounded plane and the sputtering target back side relative with sputter face; Backboard comprises the main part and the main peripheral rim portion playing fixed action that support sputtering target, and backboard is pasted integral by face of weld and sputtering target, and the backboard inwall relative with face of weld forms cooling surface, and cooling surface is circular flat;
Described magnetic target carries out following change in shape by described non magnetic target and is formed:
1) thinning sputtering target; And
2) make the sputter face of sputtering target and the back side thereof into sphere by plane, and sputter face is completely parallel with the back side of sputtering target, meanwhile, the face of weld of back plate main body part changes Internal Spherical Surface into by the plane of non magnetic target, and fits completely with the back side of sputtering target.
2. a kind of magnetic target according to claim 1, it is characterized in that: the total height of described non magnetic target is 46.10 ~ 48.60m, the thickness of its sputtering target is 2.9 ~ 3.1mm, backboard peripheral rim portion height is 3.92 ~ 24.72mm, and cooling surface is 22.03 ~ 22.43mm to the vertical range of the bottom of backboard peripheral rim portion.
3. a kind of magnetic target according to claim 2, is characterized in that: described change in shape 1) in the thinning of thinning sputtering target be of a size of 0.4 ~ 0.6mm; 2) internal diameter forming the sputter face after sphere in is 1026 ~ 1411mm.
4. a kind of magnetic target according to claim 2, is characterized in that: described change in shape also comprises 3) from the thinning backboard in cooling surface direction of back plate main body part; And 4) by thinning for backboard peripheral rim portion.
5. a kind of magnetic target according to claim 4, is characterized in that: described change in shape 1) in the thinning of thinning sputtering target be of a size of 0.4 ~ 0.6mm; 2) internal diameter forming the sputter face after sphere in is 2210 ~ 2336mm; 3) in, the thickness thinning of thinning backboard is 10.75 ~ 10.79mm; 4) the thinning 5.90 ~ 6.02mm of mesonotal shield peripheral rim portion.
6. a kind of magnetic target according to claim 3 or 5, is characterized in that: use the magnetic control sputtering system shared with described non magnetic target to sputter, the thickness evenness that described magnetic target sputters on base material is less than 2%.
7. a kind of magnetic target according to claim 6, is characterized in that: the sputtering target of described non magnetic target is aluminium target; The sputtering target of described magnetic target is NiPt alloys target or Ni metallic target.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520855329.6U CN205062168U (en) | 2015-10-29 | 2015-10-29 | Magnetism target |
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| CN201520855329.6U CN205062168U (en) | 2015-10-29 | 2015-10-29 | Magnetism target |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603371A (en) * | 2015-10-29 | 2016-05-25 | 杭州立昂微电子股份有限公司 | Magnetic sputtering target material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603371A (en) * | 2015-10-29 | 2016-05-25 | 杭州立昂微电子股份有限公司 | Magnetic sputtering target material |
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