CN109267019A - Silicon rotary target material and preparation method thereof - Google Patents
Silicon rotary target material and preparation method thereof Download PDFInfo
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- CN109267019A CN109267019A CN201710580679.XA CN201710580679A CN109267019A CN 109267019 A CN109267019 A CN 109267019A CN 201710580679 A CN201710580679 A CN 201710580679A CN 109267019 A CN109267019 A CN 109267019A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
The present invention provides a kind of silicon rotary target material and preparation method thereof, and the preparation method includes: offer basal body pipe；Using the first plasma spray process, silicon layer is sprayed on described matrix pipe, forms the silicon target layer around described matrix pipe.The silicon target layer around described matrix pipe is formed by using plasma spray process, it obtains size and meets that process requirements, structural compactness be higher, silicon rotary target material of flawless, and make the size integration of the silicon rotary target material, the length and thickness of the silicon rotary target material are unrestricted, and without the mode of more piece segmented welding, the preparation process of the silicon rotary target material can be simplified, reduce preparation cost.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of silicon rotary target material and preparation method thereof.
Background technique
Silicon is a kind of important coating film on glass material.Flat-panel monitor, photovoltaic panel, low-e glass and electronics
Large-area coating film is widely applied in the industries such as intelligent color-changing glass, it is raw that large-area coating film generallys use physical gas-phase deposition
It produces, film deposition is a wherein extremely important process, and in this process, it is heavy that the quality of sputtering target material is directly related to film
Product and plating film quality.Therefore, the process key technology is constantly in improvement, such as at present with rotatable sputtering target technical substitution
Plane sputtering target material technology.
Rotary target material has more advantages relative to planar targets: 1) target utilization is high (up to 70% or more), even
It can achieve 90%；2) sputtering rate is fast, is 2-3 times of planar targets；3) it efficiently reduces dozen arc and surface is scaling-off, technique is steady
It is qualitative good.
For rotary plating target, it is desirable that rotary target material is single whole or segmented welding on same basal body pipe.At present
The preparation method of rotary target material mainly includes hot isostatic pressing method, hot pressing sintering method and casting method, and process above respectively has advantage and disadvantage, but
To be difficult to meet to various sizes of flexible control, especially hot pressing sintering method can only production length be single branch within 300mm
Target, therefore can only be fixed on by more piece segmented welding on basal body pipe and reach certain length requirement, life is increased in this way
The step of production, improves the cost of target production.
Therefore, it is urgent to provide a kind of new processes, to prepare the silicon rotary target material that size meets process requirements.
Summary of the invention
Problems solved by the invention is to provide a kind of silicon rotary target material and preparation method thereof, keeps the size of silicon rotary target material full
Sufficient process requirements, and prepare that the simple process of the silicon rotary target material, cost is relatively low.
To solve the above problems, the present invention provides a kind of preparation method of silicon rotary target material, comprising: provide basal body pipe；It adopts
With the first plasma spray process, silicon layer is sprayed on described matrix pipe, forms the silicon target layer around described matrix pipe.
Optionally, the silicon target layer with a thickness of 6mm to 10mm.
Optionally, raw material used by first plasma spray process is silicon powder, and the purity of the silicon powder is greater than
Or it is equal to 99.9%.
Optionally, raw material used by first plasma spray process is silicon powder, and the granularity of the silicon powder is 45 μ
M to 150 μm.
Optionally, the step of first plasma spray process includes: to spray silicon to described matrix pipe using spray gun
Layer, used main gas are Ar and N2One or both of, described matrix pipe is with the revolving speed of 40r/min to 80r/min in
Mandrel rotation, axial reciprocating of the spray gun with the speed of 400mm/min to 800mm/min along described matrix pipe at the uniform velocity move,
The distance of the spray gun to described matrix pipe is 120mm to 200mm, and spray angle is 80 ° to 90 °, and primary air amount is 40L/min
To 45L/min, main atmospheric pressure is 0.5MPa to 0.7MPa.
Optionally, it is 400A to 500A, voltage 50V that the parameter of first plasma spray process, which includes: electric current,
To 80V, powder sending quantity is 45g/min to 55g/min, and powder feeding throughput is 4L/min to 5.5L/min, and used secondary gas is H2,
Secondary throughput is 1L/min to 3L/min, and secondary atmospheric pressure is 0.3MPa to 0.4Mpa.
Optionally, it after described matrix pipe is provided, before carrying out first plasma spray process, further comprises the steps of:
Described matrix pipe is surface-treated, described matrix pipe is made to reach default surface roughness.
Optionally, the default surface roughness is 3 μm to 6 μm.
Optionally, the step of surface treatment includes: to carry out grinding process to described matrix pipe using sand paper；Described
After grinding process, described matrix pipe is started the cleaning processing using alcohol or aqueous isopropanol；After the cleaning treatment, to institute
It states matrix pipe surface and carries out blasting treatment.
Optionally, after being surface-treated to described matrix pipe, before carrying out first plasma spray process, also
Comprising steps of spraying silicon-aluminium prime coat on described matrix pipe using the second plasma spray process.
Optionally, the silicon-aluminium prime coat is with a thickness of 0.05mm to 0.3mm.
Optionally, the step of second plasma spray process includes: to spray silicon-to described matrix pipe using spray gun
Aluminium prime coat, used main gas are Ar and N2One or both of, described matrix pipe is turned with 40r/min's to 80r/min
Speed around center axis rotation, the spray gun with the speed of 400mm/min to 800mm/min along described matrix pipe axial reciprocating at the uniform velocity
Mobile, the distance of the spray gun to described matrix pipe is 120mm to 140mm, and spray angle is 75 ° to 90 °, and primary air amount is
40L/min to 45L/min, main atmospheric pressure are 0.5MPa to 0.7MPa.
Optionally, it is 380A to 450A, voltage 45V that the parameter of second plasma spray process, which includes: electric current,
To 55V, powder sending quantity is 40g/min to 45g/min, and powder feeding throughput is 3L/min to 5L/min, and used secondary gas is H2, secondary
Throughput is 1L/min to 3L/min, and secondary atmospheric pressure is 0.3MPa to 0.4Mpa.
Optionally, before second plasma spray process, offer silicon-aluminium mixed-powder is further comprised the steps of:.
Optionally, the step of providing the silicon-aluminium mixed-powder includes: to provide pure silicon powder and pure aluminium powder；To the pure silicon
Powder and pure aluminium powder carry out mechanical mixture.
Optionally, the purity of the pure silicon powder is greater than or equal to 99.99%, and the purity of the pure aluminium powder is greater than or equal to
99.995%.
Optionally, the granularity of the pure silicon powder is 45 μm to 150 μm, and the granularity of the pure aluminium powder is 25 μm to 96 μm.
Optionally, it is 85% to 95% that the pure silicon silty amount, which accounts for the pure silicon powder and the ratio of pure aluminium powder gross mass, institute
Stating pure aluminium powder quality and accounting for the pure silicon powder and the ratio of pure aluminium powder gross mass is 5% to 15%.
Optionally, the mixing time of the mechanical mixture is 6 hours to 9 hours.
Optionally, any technique step in first plasma spray process and the second plasma spray process
In rapid, water flowing is cooling in described matrix pipe, and carries out cooling treatment to silicon target surface using sub-cooled fluid, controls institute
Stating silicon target surface temperature is 100 DEG C to 200 DEG C.
Optionally, any technique step in first plasma spray process and the second plasma spray process
In rapid, water flowing is cooling in described matrix pipe, and carries out cooling treatment to silicon target surface using sub-cooled fluid, controls institute
Stating silicon target surface temperature is 100 DEG C to 200 DEG C.
Optionally, the material of described matrix pipe is 304 stainless steels or 316 stainless steels.
Optionally, it after forming the silicon target layer, further comprises the steps of: and the silicon target layer is machined.
Correspondingly, the present invention also provides a kind of silicon rotary target materials, comprising: basal body pipe；Around the silicon target of described matrix pipe
Layer, the silicon target layer with a thickness of 6mm to 10mm.
Optionally, the purity of the silicon target layer is greater than 99.9%.
Optionally, the density of the silicon target layer is 2.2g/cm3To 2.3g/cm3。
Optionally, the silicon rotary target material further include: silicon-aluminium prime coat is located at described matrix pipe and the silicon target layer
Between.
Optionally, the silicon-aluminium prime coat is with a thickness of 0.05mm to 0.3mm.
Compared with prior art, technical solution of the present invention has the advantage that
The silicon target layer around described matrix pipe is formed by using plasma spray process, size is obtained and meets technique
Demand, structural compactness be higher, flawless silicon rotary target material, and makes the size integration of the silicon rotary target material, the silicon
The length and thickness of rotary target material are unrestricted, and the silicon rotary target material thickness can achieve 6mm to 10mm, and without more
The mode for saving segmented welding can simplify the preparation process of the silicon rotary target material, reduce preparation cost.
In optinal plan, formed before silicon target layer, using plasma spraying process, on the stainless steel base pipe
The binding ability of spraying silicon-aluminium prime coat, aluminium and stainless steel is higher, and the binding ability of aluminium and silicon is also higher, therefore the silicon-aluminium
Prime coat is as the transition zone between the stainless steel base pipe and silicon target layer, so as to effectively improve the stainless base steel
Bond strength between body pipe and silicon target layer.
Detailed description of the invention
Fig. 1 is the flow diagram of one embodiment of preparation method of silicon rotary target material of the present invention；
Fig. 2 is the corresponding schematic diagram of step S1 in embodiment illustrated in fig. 1；
Fig. 3 is the corresponding schematic diagram of step S11 in embodiment illustrated in fig. 1；
Fig. 4 and Fig. 5 is the corresponding schematic diagram of step S12 in embodiment illustrated in fig. 1；
Fig. 6 is the corresponding schematic diagram of step S2 in embodiment illustrated in fig. 1.
Specific embodiment
It can be seen from background technology that it is urgent to provide a kind of new processes, to prepare the silicon rotation that size meets process requirements
Target, and prepare that the simple process of the silicon rotary target material, cost is relatively low.
To solve the above-mentioned problems, the present invention forms the silicon around described matrix pipe by using plasma spray process
Target layer obtains size and meets that process requirements, structural compactness be higher, silicon rotary target material of flawless, and rotates the silicon
The size integration of target, the length and thickness of the silicon rotary target material are unrestricted, and the silicon rotary target material thickness can reach
To 6mm to 10mm, and without the mode of more piece segmented welding, the preparation process of the silicon rotary target material can be simplified, dropped
Low preparation cost.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Referring to FIG. 1, showing the flow diagram of one embodiment of preparation method of silicon rotary target material of the present invention.This implementation
The preparation method of example silicon rotary target material includes following basic step:
Step S1: basal body pipe is provided；
Step S2: using the first plasma spray process, and silicon layer is sprayed on described matrix pipe, is formed around the base
The silicon target layer of body pipe.
Specific embodiments of the present invention are described further below in conjunction with attached drawing.
In conjunction with reference Fig. 1 and Fig. 2, Fig. 2 shows the corresponding schematic diagrames of step S1 in embodiment illustrated in fig. 1, execute step
S1 provides basal body pipe 300.
Described matrix pipe 300 is formed in for carrying silicon target layer, i.e., subsequent formed silicon target layer in the subsequent process
On described matrix pipe 300 and around described matrix pipe 300；In addition, formed silicon rotary target material is by described matrix pipe 300 to pacify
It is filled on sputtering machine table.
The a part of described matrix pipe 300 as formed silicon rotary target material, but described matrix pipe 300 is not involved in sputtering work
Skill, to avoid generating adverse effect to the sputtering performance of formed silicon rotary target material, and described matrix pipe 300 is with higher
Mechanical strength, to keep preferable mechanical property in sputtering process.In the present embodiment, the material of described matrix pipe 300 is
Stainless steel.
Specifically, the material of described matrix pipe 300 is 304 stainless steels or 316 stainless steels.
304 stainless steels and 316 stainless steels are the stainless steels produced according to U.S.ASTM standard.304 stainless steels and 316
Stainless steel has good corrosion resistance and toughness, and 316 stainless steel materials are also added with Mo element, so that 316 stainless steels
The corrosion resistance and elevated temperature strength of material get a promotion, so that described matrix pipe 300 be enable to use under conditions of severe cruel.
In the present embodiment, the shape of described matrix pipe 300 is hollow cylindrical body.In other embodiments, described matrix
The shape of pipe can also be depending on actual process demand.
Formed silicon rotary target material passes through described matrix pipe 300 to install to sputtering machine table, therefore described matrix pipe 300
Outer diameter and length depending on sputtering machine table, and the length of described matrix pipe 300 be greater than formed silicon target layer length, from
And while carrying formed silicon target layer, avoid the installation to described matrix pipe 300 from generating adverse effect.
It continues to refer to figure 1, and combines and refer to Fig. 3 to Fig. 6, Fig. 6 is the corresponding signal of step S2 in embodiment illustrated in fig. 1
Figure executes step S2, and using the first plasma spray process, silicon layer is sprayed on described matrix pipe 300, is formed around described
The silicon target layer 330 of basal body pipe 300.
The silicon target layer 330 for realizing formed silicon rotary target material sputtering performance, in the silicon rotary target material
In sputtering process, the 330 surface generating material of silicon target layer consumes and forms a large amount of target atoms, a large amount of targets sputtered
Atomic deposition forms film on substrate.
The thickness of the silicon target layer 330 is bigger, and the silicon target layer 330 uses thickness accordingly also bigger, to have
Conducive to the service life for improving formed silicon rotary target material.In the present embodiment, the thickness of the silicon target layer 330 is up to 10mm.
Specifically, the silicon target layer 330 with a thickness of 6mm to 10mm.Wherein, the thickness of the silicon target layer 330 can
Depending on customer demand.
Plasma spraying technology is using the plasma-arc by DC powered as heat source, by ceramics, alloy, metal
Equal materials are heated to melting or semi-molten state, and form adhesion-tight to spray at a high speed by pretreated workpiece surface
The method of superficial layer.Temperature and jet speed as caused by plasma-arc are higher, and spraying is formed by surface
Layer has the characteristics such as high-melting-point, wearability, corrosion resistance and high-temperature oxidation, and since plasma spray coating can make powder
It is higher to obtain biggish kinetic energy, powder temperature, therefore spraying is formed by superficial layer consistency with higher and bond strength.
Correspondingly, being formed by silicon target layer 330 with wearability, corrosion resistance by the first plasma spray process
With the characteristics such as high-temperature oxidation, and the consistency for being formed by silicon target layer 330 is higher, to be conducive to improve formed silicon
The sputtering performance of rotary target material.
In the present embodiment, raw material used by first plasma spray process is silicon powder, and the silicon powder passes through
Ionomer spray technology is sprayed on described matrix pipe 300, to form the silicon target layer 330.
In the present embodiment, the purity of the silicon powder is greater than or equal to 99.9%.It is greater than or equal to by choosing purity
99.9% silicon powder to improve the purity of formed silicon target layer 330, and then is conducive to avoid polymictic introducing
The sputtering performance for improving formed silicon rotary target material, improves the purity and quality of sputtered film.
It should be noted that plasma spray technology has certain requirement, the grain of the silicon powder to the granularity of powder
Degree is unsuitable too small, also should not be too large.If the undersized of the silicon powder, formed silicon target layer 330 is easy to cause to occur
Lamination；If the granularity of the silicon powder is excessive, it is easy to cause the porosity of formed silicon target layer 330 bigger than normal, that is, leads
Cause the consistency decline of formed silicon target layer 330.For this purpose, the granularity of the silicon powder is 45 μm to 150 μm in the present embodiment.
Specifically, the step of first plasma spray process includes: using the first spray gun 600 to described matrix pipe
300 spraying silicon layers, used main gas are Ar and N2One or both of, described matrix pipe 300 is with 40r/min to 80r/
The revolving speed of min is around center axis rotation, and first spray gun 600 is with the speed of 400mm/min to 800mm/min along described matrix pipe
300 axial reciprocating at the uniform velocity moves (as shown in the direction B1, B2 in Fig. 6), first spray gun 600 to described matrix pipe 300
Distance is 120mm to 200mm, and spray angle is 80 ° to 90 °, and primary air amount is 40L/min to 45L/min, and main atmospheric pressure is
0.5MPa to 0.7MPa.
During first plasma spray process, by making described matrix pipe 300 around center axis rotation, make
First spray gun 600 is at the uniform velocity moved along the axial reciprocating of described matrix pipe 300, to form ring on described matrix pipe 300
Around the silicon target layer 330 of described matrix pipe 300, and be conducive to improve the caliper uniformity of the silicon target layer 330.
By the main gas, so that the silicon powder is sprayed on described matrix pipe 300.It is used in the present embodiment
Main gas is Ar and N2One or both of.Main gas used by first plasma spray process is inert gas, from
And it can reduce the probability that the silicon target layer 330 aoxidizes.
Primary air amount is unsuitable too small, also should not be too large, and main atmospheric pressure is unsuitable too small, also should not be too large, and the primary air
Amount and main atmospheric pressure cooperate, and main atmospheric pressure is bigger, and primary air amount is accordingly bigger.
If main atmospheric pressure is too small, cause primary air amount accordingly too small, accordingly leads to first plasma spray coating
The efficiency of technique declines, and is difficult to form the silicon target layer 330 that thickness meets process requirements within a preset time；If main atmospheric pressure
It is excessive, then cause primary air amount accordingly excessive, so that the consistency of formed silicon target layer 330 is easy to cause to decline.For this purpose, this
In embodiment, primary air amount is 40L/min to 45L/min, and main atmospheric pressure is 0.5MPa to 0.7MPa.
The revolving speed of described matrix pipe 300 is unsuitable too small, also should not be too large, the movement speed of first spray gun 600 is unsuitable
It is too small, also it should not be too large.If the revolving speed of described matrix pipe 300 is too small or the movement speed mistake of first spray gun 600
It is small, then cause the efficiency of first plasma spray process to decline, is difficult to form thickness within a preset time and meets technique
The silicon target layer 330 of demand；If the revolving speed of described matrix pipe 300 is excessive or the movement speed mistake of first spray gun 600
Greatly, then the consistency of formed silicon target layer 330 is easy to cause to decline.For this purpose, described matrix pipe 300 turns in the present embodiment
Speed is 40r/min to 80r/min, and the movement speed of first spray gun 600 is 400mm/min to 800mm/min.
In the present embodiment, first spray gun 600 sprays the angle between 300 surface of direction and described matrix pipe of silicon powder
It is 80 ° to 90 °, i.e., spray angle is 80 ° to 90 °, so that the uniformity that first spray gun 600 sprays silicon powder is higher,
And the coverage area of sprayed silicon powder is more guaranteed.Wherein, the spray angle refers to for 80 ° to 90 °: first spray gun
600 angles sprayed between 300 surface normal of direction and described matrix pipe of silicon powder are 0 degree to 10 degree.
The distance of first spray gun 600 to described matrix pipe 300 is unsuitable too small, also should not be too large.Since silicon powder sprays
When be divergence form, if the distance of the first spray gun 600 to the described matrix pipe 300 is excessive, be easy to cause sprayed silicon powder
Coverage area reduce, so as to cause first plasma spray process efficiency decline；Since spraying temperature is higher, such as
The distance of first spray gun 600 to described matrix pipe 300 described in fruit is too small, then is easy to cause spraying area due to high temperature influences
Silicon materials recess and other regions the problem of agglomerating.For this purpose, in the present embodiment, first spray gun 600 to described matrix
The distance of pipe 300 is 120mm to 200mm.
Correspondingly, it is 400A to 500A, voltage 50V that the parameter of first plasma spray process, which includes: electric current,
To 80V, powder sending quantity is 45g/min to 55g/min, and powder feeding throughput is 4L/min to 5.5L/min, and used secondary gas is H2,
Secondary throughput is 1L/min to 3L/min, and secondary atmospheric pressure is 0.3MPa to 0.4Mpa.
Wherein, the secondary gas is for adjusting the primary air amount, to improve first plasma spray process
Efficiency and technology stability.If the secondary throughput is too small, adjustment effect is poor；If the secondary throughput is excessive,
It is easy to cause the efficiency of first plasma spray process too low.And due to the secondary throughput and time atmospheric pressure phase interworking
It closes, therefore in the present embodiment, controlling time throughput is 1L/min to 3L/min, and controlling time atmospheric pressure is 0.3MPa to 0.4Mpa.
It should be noted that in the processing step of first plasma spray process, in described matrix pipe 300
Water flowing is cooling, and cold to 330 surface of silicon target layer progress using sub-cooled fluid (for example, carbon dioxide or liquid nitrogen)
But it handles, control silicon target surface temperature is 100 DEG C to 200 DEG C, to avoid leading to the silicon because of the extension of spray time
The excessively high problem of 330 surface temperature of target layer, and then to realize that long-time continuous spray provides stable condition, improve institute
State the spray efficiency of the first plasma spray process.
It should also be noted that, providing as shown in figure 3, Fig. 3 is the corresponding schematic diagram of step S11 in embodiment illustrated in fig. 1
It further include executing step S11: to described matrix before carrying out first plasma spray process after described matrix pipe 300
Pipe 300 is surface-treated, and described matrix pipe 300 is made to reach default surface roughness Ra.
Specifically, the step of surface treatment includes: to carry out grinding process to described matrix pipe 300 using sand paper；?
After the grinding process, described matrix pipe 300 is started the cleaning processing using alcohol or aqueous isopropanol；In the cleaning treatment
Afterwards, blasting treatment is carried out to 300 surface of described matrix pipe.
By the grinding process, to remove the oxide layer on 300 surface of described matrix pipe, and be conducive to improve described matrix
The surface flatness of pipe 300 is conducive to provide good surface quality for subsequent blasting treatment.
Therefore, the granularity of the sand paper is unsuitable too small, also should not be too large.If the undersized of the sand paper, removes
The effect of oxide layer is poor, and is easily reduced the efficiency of the grinding process；If the granularity of the sand paper is excessive, it is easy drop
The surface quality of low described matrix pipe 300 is easy to cause described matrix pipe 300 the excessive problem of surface roughness occur.This reality
It applies in example, sand paper granularity used by the grinding process is 300 mesh to 600 mesh.
The cleaning treatment can also remove described beat for removing the dirts such as the greasy dirt on 300 surface of described matrix pipe
Generated impurity after mill processing.
For this purpose, cleaning solution used by the cleaning treatment is the organic solutions such as alcohol or isopropanol in the present embodiment,
So as to preferably dissolve and remove the greasy dirt on 300 surface of described matrix pipe.
The blasting treatment is for realizing the roughening effect to 300 surface of described matrix pipe, to increase described matrix pipe
Bond strength between 300 and subsequent film, so that subsequent film is not easy to fall off from described matrix pipe 300.
By the blasting treatment, 300 surface of described matrix pipe is made to be formed with pit 310, thus in described matrix pipe 300
Surface forms rough layer, and described matrix pipe 300 is made to reach default surface roughness Ra.
The default surface roughness Ra is unsuitable too small, also should not be too large.If the default surface roughness Ra is too small,
The depth of the i.e. described pit 310 is too small, then is easy to cause the bond strength between described matrix pipe 300 and subsequent film poor,
Subsequent film is easy to fall off from described matrix pipe 300, to reduce the yield and performance of formed silicon rotary target material；If institute
State that default surface roughness Ra is excessive, i.e., the depth of the described pit 310 is excessive, then the material of subsequent film be difficult to be filled up completely in
In the pit 310, that is, there is cavity between 300 surface of formed film layer and described matrix pipe, also result in described matrix pipe
Bond strength between 300 and subsequent film is deteriorated.For this purpose, the default surface roughness Ra is 3 μm to 6 μ in the present embodiment
M, i.e., the depth of the described pit 310 are 3 μm to 6 μm.
Specifically, carrying out blasting treatment, the nozzle 400 of the sand-blasting machine to 300 surface of described matrix pipe using sand-blasting machine
Sand grains 410 is sprayed to 300 surface of basal body pipe by air pressure, and is made by control 410 size of sand grains with air pressure size
The surface roughness of described matrix pipe 300 reaches default surface roughness Ra.
In the present embodiment, sand grains 410 used by the blasting treatment is white fused alumina.Specifically, the sand grains 410 is 46
Number white fused alumina.Wherein, No. 46 in No. 46 white fused aluminas are the labels according to GB2477083.
The hardness of white fused alumina is higher, so as to realize preferable sandblasting effect；In addition, white fused alumina is main in blasting craft
The sand material to be used and cost is relatively low, advantageously reduces technology difficulty and process costs.
Air pressure used by the sand-blasting machine should not be too large, also unsuitable too small.If the air pressure used is excessive, sandblasting
Power is excessive, is easy to cause the depth of the pit 310 excessive, that is, the rough surface of described matrix pipe 300 is easy to cause to spend
Greatly, in severe cases, described matrix pipe 300 or even can be also destroyed, the appearance and integrality of described matrix pipe 300 are influenced；
If the air pressure used is too small, sandblasting is short of power, thus the problem of being easy to appear local drain spray, and lead to described matrix
The surface roughness of pipe 300 is too small, and then reduces the bond strength between described matrix pipe 300 and subsequent film.For this purpose, this reality
It applies in example, air pressure range used by the blasting treatment is 0.6Mpa to 0.8Mpa.
In addition, as shown in Figure 4 and Figure 5, Fig. 4 and Fig. 5 are the corresponding schematic diagrames of step S12 in embodiment illustrated in fig. 1, to institute
It states after basal body pipe 300 is surface-treated, further includes executing step S12 before carrying out first plasma spray process:
Using the second plasma spray process, silicon-aluminium prime coat 320 is sprayed on described matrix pipe 300.
The binding ability of aluminium and stainless steel is higher, and the binding ability of aluminium and silicon is also higher, therefore the silicon-aluminium prime coat
320 as the transition zone between described matrix pipe 300 and silicon target layer 330, so as to effectively improve 300 He of described matrix pipe
Bond strength between silicon target layer 330.
The silicon-aluminium prime coat 320 thickness is unsuitable too small, also should not be too large.If the silicon-aluminium prime coat 320
Thickness is too small, then the transition zone that the silicon-aluminium prime coat 320 is played the role of is poor, that is, is difficult to effectively improve described matrix pipe
Bond strength between 300 and silicon target layer 330；If the silicon-aluminium prime coat 320 thickness is excessive, beaten in the silicon-aluminium
In the case that the overall thickness of bottom 320 and the silicon target layer 330 is certain, the thickness that will lead to the silicon target layer 330 is corresponding
Too small, so as to cause being reduced using thickness for the silicon target layer 330, the service life of formed silicon rotary target material declines, or
Person will lead to the silicon-aluminium prime coat 320 and the overall thickness of the silicon target layer 330 is excessive, and work as the silicon-aluminium prime coat
When 320 thickness effectively improves the bond strength between described matrix pipe 300 and silicon target layer 330 enough, excessive thickness it is described
Silicon-aluminium prime coat 320 also will cause the waste of process costs.For this purpose, in the present embodiment, the silicon-aluminium prime coat 320 thickness
For 0.05mm to 0.3mm.
As shown in figure 4, before second plasma spray process, further comprising the steps of: offer in the present embodiment
Silicon-aluminium mixed-powder (not indicating).
The silicon-aluminium mixed-powder is raw material used by second plasma spray process.
Specifically, the step of providing the silicon-aluminium mixed-powder includes: to provide pure silicon powder 110 and pure aluminium powder 120；By institute
It states pure silicon powder 110 and pure aluminium powder 120 is placed in mixed powder machine 200, mechanical mixture is carried out to the pure silicon powder 110 and pure aluminium powder 120.
In the present embodiment, the purity of the pure silicon powder 110 is greater than or equal to 99.99%, and the purity of the pure aluminium powder 120 is big
In or be equal to 99.995%, to avoid polymictic introducing, to improve the purity of formed silicon-aluminium prime coat 320, in turn
It avoids generating adverse effect to the sputtering performance of subsequent formed silicon rotary target material, is conducive to the purity and matter that improve sputtered film
Amount.
In the present embodiment, the granularity of the pure silicon powder 110 is 45 μm to 150 μm, and the granularity of the pure aluminium powder 120 is 25 μm
To 96 μm.The granularity of the pure silicon powder 110 and the granularity of pure aluminium powder 120 cooperate, to be conducive to improve the pure silicon powder
110 and pure aluminium powder 120 mixing uniformity.
The ratio that 120 mass of pure aluminium powder accounts for 120 gross mass of the pure silicon powder 110 and pure aluminium powder is unsuitable too small, also not
It is preferably excessive.If the ratio that 120 mass of pure aluminium powder accounts for 120 gross mass of the pure silicon powder 110 and pure aluminium powder is too small, institute's shape
The transition zone played the role of at silicon-aluminium prime coat 320 is poor, that is, is difficult to effectively improve described matrix pipe 300 and silicon target layer
Bond strength between 330；If 120 mass of pure aluminium powder accounts for the ratio of 120 gross mass of the pure silicon powder 110 and pure aluminium powder
It is excessive, then it is easy to increase the probability that aluminum pollution occurs, reduces the sputtering performance of formed silicon rotary target material, reduce sputtered film
Purity and quality.For this purpose, 110 mass of pure silicon powder accounts for 120 gross mass of the pure silicon powder 110 and pure aluminium powder in the present embodiment
Ratio be 85% to 95%, the ratio that 120 mass of pure aluminium powder accounts for 120 gross mass of the pure silicon powder 110 and pure aluminium powder is
5% to 15%, i.e., the fine aluminium that the pure silicon powder 110 for being 85% to 95% according to mass percent, mass percent are 5% to 15%
Powder 120 is matched.
The mixing time of the mechanical mixture is unsuitable very few, also unsuitable excessive.If the mixing time of the mechanical mixture
It is very few, then it is easy to cause the mixing of the pure silicon powder 110 and pure aluminium powder 120 not uniform enough, easily causes segregation lamination, from
And reduce the silicon-aluminium prime coat 320 processing performance and mechanical performance；If the mixing time of the mechanical mixture is excessive,
It will also result in the waste of process time and process costs instead.For this purpose, in the present embodiment, the mixing time of the mechanical mixture is
6 hours to 9 hours.
Specifically, the step of second plasma spray process includes: using the second spray gun 500 to described matrix pipe
300 spraying silicon-aluminium prime coats 320, used main gas are Ar and N2One or both of, described matrix pipe 300 is with 40r/
The revolving speed of min to 80r/min is around center axis rotation, and second spray gun 500 is with the speed edge of 400mm/min to 800mm/min
The axial reciprocating of described matrix pipe 300 at the uniform velocity moves (as shown in the direction A1, A2 in Fig. 5), second spray gun 500 to the base
The distance of body pipe 300 is 120mm to 140mm, and spray angle is 75 ° to 90 °, and primary air amount is 40L/min to 45L/min, main
Atmospheric pressure is 0.5MPa to 0.7MPa.
In the present embodiment, the distance of second spray gun 500 to described matrix pipe 300 is 120mm to 140mm, by institute
Contain aluminum material in the silicon of spraying-aluminium prime coat 320, in the case where containing aluminium, the cooling of the silicon-aluminium prime coat 320 is very fast,
Therefore compared with the scheme for only spraying silicon materials, can suitably reduce second spray gun 500 to described matrix pipe 300 away from
From.
In the present embodiment, the spray angle of second plasma spray process is 75 ° to 90 °, i.e., described second spray
The angle that rifle 500 sprays between silicon-aluminium mixed-powder direction and 300 surface of described matrix pipe is 75 ° to 90 °；Silicon-the aluminium
The thickness of prime coat 320 is smaller, therefore under the setting of the spray angle, is conducive to improve the silicon-aluminium prime coat 320
The thickness uniformity.
To the revolving speed of described matrix pipe 300, the movement speed of second spray gun 500, primary air amount and main atmospheric pressure
Setting analysis, please refers to the corresponding description of aforementioned first plasma spray process, details are not described herein for the present embodiment.
Correspondingly, it is 380A to 450A, voltage 45V that the parameter of second plasma spray process, which includes: electric current,
To 55V, powder sending quantity is 40g/min to 45g/min, and powder feeding throughput is 3L/min to 5L/min, and used secondary gas is H2, secondary
Throughput is 1L/min to 3L/min, and secondary atmospheric pressure is 0.3MPa to 0.4Mpa.
Setting analysis to the secondary throughput and time atmospheric pressure, please refers to the phase of aforementioned first plasma spray process
It should describe, details are not described herein for the present embodiment.
It should be noted that in the processing step of second plasma spray process, in described matrix pipe 300
Water flowing is cooling, and is carried out using sub-cooled fluid (for example, carbon dioxide or liquid nitrogen) to the silicon -320 surface of aluminium prime coat
Cooling treatment, control silicon target surface temperature are 100 DEG C to 200 DEG C, thus described in avoiding causing because of the extension of spray time
Silicon-excessively high the problem of 320 surface temperature of aluminium prime coat, and then to realize that long-time continuous spray provides stable condition, it mentions
The high spray efficiency of second plasma spray process.
In the present embodiment, after forming the silicon target layer 330, further comprises the steps of: and machinery is carried out to the silicon target layer 330
Processing.
By the machining, so that the silicon target layer 330 be made to obtain the outer dimension of process requirements, and make described
The surface flatness of silicon target layer 330 meets process requirements.
Correspondingly, the present invention also provides a kind of silicon rotary target materials.
With continued reference to Fig. 6, the structural schematic diagram of one embodiment of silicon rotary target material of the present invention is shown.The silicon rotary target material
Include:
Basal body pipe 300；Around described matrix pipe 300 silicon target layer 330, the silicon target layer 330 with a thickness of 6mm extremely
10mm。
For described matrix pipe 300 for carrying the silicon target layer 330, i.e., the described silicon target layer 330 is located at described matrix pipe
On 300 and around described matrix pipe 300；In addition, the silicon rotary target material is by described matrix pipe 300 to install to sputtering machine table
On.
The a part of described matrix pipe 300 as the silicon rotary target material, but described matrix pipe 300 is not involved in sputtering work
Skill, to avoid generating adverse effect, and the machine with higher of described matrix pipe 300 to the sputtering performance of the silicon rotary target material
Tool intensity, to keep preferable mechanical property in sputtering process.In the present embodiment, the material of described matrix pipe 300 is not
Become rusty steel.
Specifically, the material of described matrix pipe 300 is 304 stainless steels or 316 stainless steels.
304 stainless steels and 316 stainless steels are the stainless steels produced according to U.S.ASTM standard.304 stainless steels and 316
Stainless steel has good corrosion resistance and toughness, and 316 stainless steels are also added with Mo element, so that 316 stainless steel materials
Corrosion resistance and elevated temperature strength get a promotion, so that described matrix pipe 300 be enable to use under conditions of severe cruel.
In the present embodiment, the shape of described matrix pipe 300 is hollow cylindrical body.In other embodiments, described matrix
The shape of pipe can also be depending on actual process demand.
The silicon rotary target material passes through described matrix pipe 300 to install to sputtering machine table, therefore described matrix pipe 300
Outer diameter and length are depending on sputtering machine table, and the length of described matrix pipe 300 is greater than the length of the silicon target layer 330, from
And while carrying silicon target layer 330, avoid the installation to described matrix pipe 300 from generating adverse effect.
The silicon target layer 330 for realizing the silicon rotary target material sputtering performance, in splashing for the silicon rotary target material
During penetrating, the 330 surface generating material of silicon target layer consumes and forms a large amount of target atoms, and a large amount of targets sputtered are former
Son, which is deposited on substrate, forms film.
In the present embodiment, the silicon target layer 330 is formed by plasma spray technology, therefore the silicon target layer
330 there is size to meet that process requirements, structural compactness be higher and the characteristics such as flawless, can be realized the silicon rotary target material
Size integration, the length and thickness of the silicon rotary target material are unrestricted, and without the mode of more piece segmented welding, letter
Change the preparation process of the silicon rotary target material, reduces preparation cost.
The thickness of the silicon target layer 330 is bigger, and the silicon target layer 330 uses thickness accordingly also bigger, to have
Conducive to the service life for improving formed silicon rotary target material.In the present embodiment, the thickness of the silicon target layer 330 is up to 10mm.
Specifically, the silicon target layer 330 with a thickness of 6mm to 10mm.Wherein, the thickness of the silicon target layer 330 can
Depending on customer demand.
In the present embodiment, the purity of the silicon target layer 330 is greater than 99.9%.The silicon target layer 330 is with higher
Purity improves the purity and quality of sputtered film to be conducive to improve the sputtering performance of the silicon rotary target material.
In the present embodiment, the density of the silicon target layer 330 is 2.2g/cm3To 2.3g/cm3。
It should be noted that the silicon rotary target material further include: silicon-aluminium prime coat 320 (as shown in Figure 5) is located at described
Between basal body pipe 300 and the silicon target layer 330.
The binding ability of aluminium and stainless steel is higher, and the binding ability of aluminium and silicon is also higher, therefore the silicon-aluminium prime coat
320 as the transition zone between described matrix pipe 300 and silicon target layer 330, so as to effectively improve 300 He of described matrix pipe
Bond strength between silicon target layer 330.
The silicon-aluminium prime coat 320 thickness is unsuitable too small, also should not be too large.If the silicon-aluminium prime coat 320
Thickness is too small, then the transition zone that the silicon-aluminium prime coat 320 is played the role of is poor, that is, is difficult to effectively improve described matrix pipe
Bond strength between 300 and silicon target layer 330；If the silicon-aluminium prime coat 320 thickness is excessive, beaten in the silicon-aluminium
In the case that the overall thickness of bottom 320 and the silicon target layer 330 is certain, the thickness that will lead to the silicon target layer 330 is corresponding
Too small, so as to cause being reduced using thickness for the silicon target layer 330, the service life of the silicon rotary target material declines, or
It will lead to the silicon-aluminium prime coat 320 and the overall thickness of the silicon target layer 330 be excessive, and work as the silicon-aluminium prime coat 320
Thickness when effectively improving the bond strength between described matrix pipe 300 and silicon target layer 330 enough, the silicon-of excessive thickness
Aluminium prime coat 320 also will cause the waste of process costs.For this purpose, in the present embodiment, the silicon-aluminium prime coat 320 with a thickness of
0.05mm to 0.3mm.
Although oneself is disclosed in the preferred embodiments as above the present invention, present invention is not limited to this.Any art technology
Personnel can make various changes or modifications, therefore protection scope of the present invention is answered without departing from the spirit and scope of the present invention
When being defined by the scope defined by the claims..
Claims (28)
1. a kind of preparation method of silicon rotary target material characterized by comprising
Basal body pipe is provided；
Using the first plasma spray process, silicon layer is sprayed on described matrix pipe, forms the silicon target around described matrix pipe
Material layer.
2. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that the silicon target layer with a thickness of
6mm to 10mm.
3. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that the first plasma spray coating work
Raw material used by skill is silicon powder, and the purity of the silicon powder is greater than or equal to 99.9%.
4. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that the first plasma spray coating work
Raw material used by skill is silicon powder, and the granularity of the silicon powder is 45 μm to 150 μm.
5. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that the first plasma spray coating work
The step of skill includes: to spray silicon layer to described matrix pipe using spray gun, and used main gas is Ar and N2One or both of,
Described matrix pipe is with the revolving speed of 40r/min to 80r/min around center axis rotation, and the spray gun is with 400mm/min to 800mm/min
Speed at the uniform velocity moved along the axial reciprocating of described matrix pipe, the distance of the spray gun to described matrix pipe be 120mm extremely
200mm, spray angle are 80 ° to 90 °, and primary air amount is 40L/min to 45L/min, and main atmospheric pressure is 0.5MPa to 0.7MPa.
6. the preparation method of silicon rotary target material as claimed in claim 1 or 5, which is characterized in that the first plasma spray
It is 400A to 500A that the parameter for applying technique, which includes: electric current, and voltage is 50V to 80V, and powder sending quantity is 45g/min to 55g/min, is sent
Powder throughput is 4L/min to 5.5L/min, and used secondary gas is H2, secondary throughput is 1L/min to 3L/min, secondary atmospheric pressure
For 0.3MPa to 0.4Mpa.
7. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that after providing described matrix pipe, carry out
It before first plasma spray process, further comprises the steps of: and described matrix pipe is surface-treated, make described matrix pipe
Reach default surface roughness.
8. the preparation method of silicon rotary target material as claimed in claim 7, which is characterized in that the default surface roughness is 3 μ
M to 6 μm.
9. the preparation method of silicon rotary target material as claimed in claim 7, which is characterized in that the step of surface treatment wraps
It includes: grinding process is carried out to described matrix pipe using sand paper；
After the grinding process, described matrix pipe is started the cleaning processing using alcohol or aqueous isopropanol；
After the cleaning treatment, blasting treatment is carried out to described matrix pipe surface.
10. the preparation method of silicon rotary target material as claimed in claim 7, which is characterized in that carry out surface to described matrix pipe
After processing, before carrying out first plasma spray process, further comprise the steps of: using the second plasma spray process,
Silicon-aluminium prime coat is sprayed on described matrix pipe.
11. the preparation method of silicon rotary target material as claimed in claim 10, which is characterized in that the silicon-aluminium prime coat thickness
Degree is 0.05mm to 0.3mm.
12. the preparation method of silicon rotary target material as claimed in claim 10, which is characterized in that second plasma spray coating
The step of technique includes: to spray silicon-aluminium prime coat to described matrix pipe using spray gun, and used main gas is Ar and N2In one
Kind or two kinds, described matrix pipe with the revolving speed of 40r/min to 80r/min around center axis rotation, the spray gun with 400mm/min extremely
The speed of 800mm/min is at the uniform velocity moved along the axial reciprocating of described matrix pipe, and the distance of the spray gun to described matrix pipe is
120mm to 140mm, spray angle be 75 ° to 90 °, primary air amount be 40L/min to 45L/min, main atmospheric pressure be 0.5MPa extremely
0.7MPa。
13. the preparation method of the silicon rotary target material as described in claim 10 or 12, which is characterized in that second plasma
The parameter of spraying process includes: that electric current is 380A to 450A, and voltage is 45V to 55V, and powder sending quantity is 40g/min to 45g/min,
Powder feeding throughput is 3L/min to 5L/min, and used secondary gas is H2, secondary throughput is 1L/min to 3L/min, secondary atmospheric pressure
For 0.3MPa to 0.4Mpa.
14. the preparation method of silicon rotary target material as claimed in claim 10, which is characterized in that sprayed in second plasma
Before applying technique, offer silicon-aluminium mixed-powder is further comprised the steps of:.
15. the preparation method of silicon rotary target material as claimed in claim 14, which is characterized in that provide the silicon-aluminium mixed powder
The step at end includes: to provide pure silicon powder and pure aluminium powder；Mechanical mixture is carried out to the pure silicon powder and pure aluminium powder.
16. the preparation method of silicon rotary target material as claimed in claim 15, which is characterized in that the purity of the pure silicon powder is greater than
Or it is equal to 99.99%, the purity of the pure aluminium powder is greater than or equal to 99.995%.
17. the preparation method of silicon rotary target material as claimed in claim 15, which is characterized in that the granularity of the pure silicon powder is 45
μm to 150 μm, the granularity of the pure aluminium powder is 25 μm to 96 μm.
18. the preparation method of silicon rotary target material as claimed in claim 15, which is characterized in that the pure silicon silty amount accounts for described
The ratio of pure silicon powder and pure aluminium powder gross mass is 85% to 95%, and the pure aluminium powder quality accounts for the pure silicon powder and the total matter of pure aluminium powder
The ratio of amount is 5% to 15%.
19. the preparation method of silicon rotary target material as claimed in claim 15, which is characterized in that when the mixed powder of the mechanical mixture
Between be 6 hours to 9 hours.
20. the preparation method of silicon rotary target material as claimed in claim 10, which is characterized in that sprayed in first plasma
It applies in any processing step in technique and the second plasma spray process, water flowing is cooling in described matrix pipe, and uses
Sub-cooled fluid carries out cooling treatment to silicon target surface, and controlling the silicon target surface temperature is 100 DEG C to 200 DEG C.
21. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that the material of described matrix pipe is not
Become rusty steel.
22. the preparation method of the silicon rotary target material as described in claims 1 or 21, which is characterized in that the material of described matrix pipe
For 304 stainless steels or 316 stainless steels.
23. the preparation method of silicon rotary target material as described in claim 1, which is characterized in that after forming the silicon target layer, also
Comprising steps of being machined to the silicon target layer.
24. a kind of silicon rotary target material characterized by comprising
Basal body pipe；
Around described matrix pipe silicon target layer, the silicon target layer with a thickness of 6mm to 10mm.
25. silicon rotary target material as claimed in claim 24, which is characterized in that the purity of the silicon target layer is greater than 99.9%.
26. silicon rotary target material as claimed in claim 24, which is characterized in that the density of the silicon target layer is 2.2g/cm3Extremely
2.3g/cm3。
27. silicon rotary target material as claimed in claim 24, which is characterized in that the silicon rotary target material further include: silicon-aluminium bottoming
Layer, between described matrix pipe and the silicon target layer.
28. silicon rotary target material as claimed in claim 27, which is characterized in that the silicon-aluminium prime coat is with a thickness of 0.05mm
To 0.3mm.
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| CN201710580679.XA CN109267019A (en) | 2017-07-17 | 2017-07-17 | Silicon rotary target material and preparation method thereof |
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| CN112899628A (en) * | 2021-01-18 | 2021-06-04 | 福建阿石创新材料股份有限公司 | Rotary silicon target material capable of being uniformly sputtered and preparation method thereof |
| CN113481477A (en) * | 2021-06-21 | 2021-10-08 | 芜湖映日科技股份有限公司 | Preparation method of high-transmittance silicon rotary sputtering target material |
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