CN109261186A - A kind of N doping nickel hydroxide nano chip arrays and its preparation method and application - Google Patents
A kind of N doping nickel hydroxide nano chip arrays and its preparation method and application Download PDFInfo
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- CN109261186A CN109261186A CN201811157247.9A CN201811157247A CN109261186A CN 109261186 A CN109261186 A CN 109261186A CN 201811157247 A CN201811157247 A CN 201811157247A CN 109261186 A CN109261186 A CN 109261186A
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- nickel hydroxide
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- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 title claims abstract description 45
- 238000003491 array Methods 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 38
- 239000004744 fabric Substances 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 7
- 230000012010 growth Effects 0.000 claims abstract description 4
- 238000009826 distribution Methods 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims description 18
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 8
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011149 active material Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002055 nanoplate Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021508 nickel(II) hydroxide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(IV) oxide Inorganic materials O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/33—Electric or magnetic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/40—Catalysts, in general, characterised by their form or physical properties characterised by dimensions, e.g. grain size
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
The invention discloses a kind of N doping nickel hydroxide nano chip arrays and its preparation method and application, the N doping nickel hydroxide nano chip arrays, by multiple N doping nickel hydroxide nano piece vertical growths on carbon cloth and array distribution；Each nickel hydroxide nano piece rough surface, having a size of 300nm-800nm, with a thickness of 20nm-60nm, nitrogen content 1.5at%-10at%.Advantage: a kind of N doping nickel hydroxide nano chip arrays can accelerate electrolysis water oxygen evolution reaction dynamics, and its simple process and high efficient and reliable.
Description
Technical field
The invention belongs to nano-functional material technical field, it is related to a kind of N doping nickel hydroxide nano chip arrays and its system
Preparation Method and application.
Background technique
Oxygen reduction reaction (OER) is the process that oxygen is generated with the help of sunlight or electricity.OER in many energy conversions and
Key effect is played in storage equipment, including solar energy or the water decomposition being driven by electricity and chargeable metal-air battery.
During the reaction, due to needing four electronics transfers that could complete to chemically react, Chemical Kinetics is slower,
And high potential is needed to drive secondary response.Metal oxide catalyst such as IrO2And RuO2It can effectively catalyze OER
Reaction occurs, but their expensive and scarcity of resources, limits their large-scale applications.Therefore, it explores and develops
Elctro-catalyst substitute with low cost, high efficiency and long durability is highly important.
In first row transition metals, Ni has cheap price, resourceful, corrosion-resistant, ductile, and compared with
Low water oxidizing potential, obtains extensive concern.In order to prepare high-performance Ni (OH)2Elctro-catalyst, researcher is usually by it
Coated on conducting base, such as nickel foil.However this form electrode material due to active material and conducting base contact it is insecure,
Result in the low defect with cyclical stability difference of electric conductivity.In order to increase the associativity of catalyst material and conducting base, now
Way be find binder connect, but this not only increased electrical conductive activities substance quality simultaneously also reduce
Electric conductivity.Therefore, directly by Ni (OH)2It is supported on conducting base, avoids increased electric conductivity while binder.Very
More researchers use nickel foam as conducting base, but its porosity makes him have lower space utilization rate and low activity
Substance load capacity, therefore for an electrode material, result in lower volume capacity.
Summary of the invention
To solve the above-mentioned problems, one of the objects of the present invention is to provide a kind of N doping nickel hydroxide nano chip arrays
And preparation method thereof, preparation process is simple, efficiently, reliably, is suitble to large-scale application.
To achieve the goals above, technical scheme is as follows: a kind of N doping nickel hydroxide nano chip arrays
Preparation method, comprising the following steps:
A, prepare nickel sulfate, sodium peroxydisulfate, ammonium hydroxide, deionized water mixed liquor；
B, by carbon cloth be immersed in step a preparation mixed liquor in, taken out after being soaked for a period of time the carbon cloth and spend from
Sub- water washing and drying；
C, the carbon cloth for preparing step b carried out in gaseous plasma implanter ion implanting processing to get
To N doping nickel hydroxide nano chip arrays of the vertical growth on the carbon cloth.
Further, the nickel sulfate in the step a, sodium peroxydisulfate, ammonium hydroxide are and the mass ratio of deionized water is 21:6:
30:200。
Further, the soaking time of carbon cloth described in the step b is 10min-80min.
Further, the ion source of ion described in the step c is nitrogen or ammonia.
Further, the power when gaseous plasma implanter carries out ion implanting processing is 100W-500W, electricity
Pressure is 10kV-20kV pulsed bias, and the ion implanting time is 10min-120min.
The second object of the present invention is to obtain the N doping nickel hydroxide nano chip arrays as made from above-mentioned preparation method,
It on carbon cloth and is in array distribution by multiple N doping nickel hydroxide nano piece vertical growths；Each N doping hydroxide
Nickel nano film rough surface, having a size of 300nm-800nm, with a thickness of 20nm-60nm, nitrogen content 1.5at%-10at%.
Present invention aims at the applications by above-mentioned N doping nickel hydroxide nano chip arrays in electrolysis water oxygen evolution reaction.
Compared with prior art, the invention has the benefit that
(1) directly the N doping nickel hydroxide nano piece of high activity is grown in the substrate of the carbon cloth, is avoided
Active material fall off and decay of activity, it is with good stability can, be conducive to extend the service life of catalyst；
(2) use the highly conductive carbon cloth for carrier, and the N doping nickel hydroxide nano piece rule is grown in carbon
On cloth, overall performance is the array structure of rule, greatly reduces contact resistance, effectively increases the efficiency of transmission of charge, institute
It states the coarse surface of N doping nickel hydroxide nano piece and more active sites is provided, to accelerate electrolysis water oxygen evolution reaction power
It learns；
(3) preparation method of the N doping nickel hydroxide nano chip arrays uses industrialized Plasma implantation techniques
Uniform Doped and surface roughening treatment, simple process and high efficient and reliable are carried out to material.
Detailed description of the invention
Fig. 1 is the electron microscope low power scanned photograph of N doping nickel hydroxide nano chip arrays described in embodiment 1；
Fig. 2 is the electron microscope high power scanned photograph of N doping nickel hydroxide nano chip arrays described in embodiment 1；
Fig. 3 is the X ray diffracting spectrum of N doping nickel hydroxide nano chip arrays described in embodiment 1；
Fig. 4 is the XPS map of N doping nickel hydroxide nano chip arrays described in embodiment 1；
Fig. 5 is the polarization curve of N doping nickel hydroxide nano chip arrays electrolysis water oxygen evolution reaction described in embodiment 1；
Fig. 6 is the stability curve of N doping nickel hydroxide nano chip arrays electrolysis water oxygen evolution reaction described in embodiment 1.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the invention.
In following embodiment, the carbon cloth of use is provided by Taiwan CeTech company, model WOS1002, with a thickness of
0.33mm, weight per unit area 120g/m2。
Embodiment 1
A, 4.2g nickel sulfate, 1.2g sodium peroxydisulfate, 6mL ammonium hydroxide, 40mL deionized water are weighed, and mixed liquor is made；
B, by the carbon cloth be immersed in step a preparation mixed liquor in, impregnate 10min after take out the carbon cloth and spend from
Sub- water washing and drying；
C, nitrogen is injected into the gaseous plasma implanter, and adjusts the gaseous plasma implanter and carries out
The power of ion implanting processing is 100W, and voltage is 10kV pulsed bias, and then generates nitrogenous plasma, then by step
The carbon cloth of b preparation carries out ion implanting in the gaseous plasma implanter, keeps 10min to get to uprightly
The N doping nickel hydroxide nano chip arrays being grown on the carbon cloth.
Each N doping nickel hydroxide nano piece nitrogen content is 1.5at%.
Product made from above-mentioned steps is carried out to the scanning of electron microscope low power and the scanning of electron microscope high power respectively, by
Fig. 1 and Fig. 2 is it is found that the carbon fiber surface of the carbon cloth uniformly coats multiple nanometer sheets, and multiple nanometer sheet overall performances are battle array
Array structure, each nanometer sheet rough surface, having a size of 300nm-800nm, with a thickness of 20nm-60nm.
Product made from above-mentioned steps is subjected to XRD characterization, from the figure 3, it may be seen that diffraction peak is carbon peak at 26 ° and 43 °,
Show that base matter is the carbon cloth.Remaining diffraction maximum can all be classified as the peak position of nickel hydroxide, it follows that the carbon
The surface of cloth is nickel hydroxide nano piece；Further, by the XPS analysis of Fig. 4 it is found that the surface of the carbon cloth is N doping
Nickel hydroxide nano piece.
Further, by N doping nickel hydroxide nano chip arrays made from above-mentioned steps directly as working electrode
It is tested, as shown in Figure 5, the N doping nickel hydroxide battle array nano-chip arrays show preferable electrolysis water activity, in electricity
Current density is 50mA/cm2In the case of, overpotential is only 350mV.Far better than MWCNTs/Ni in document report before
(OH)2(One-step synthesis of multi-walled carbon nanotubes/ultra-thin Ni(OH)2Nanoplate composite as efficient catalysts for water oxidation), which generates
10mA/cm2Electric current need the overpotential of 474mV.As shown in fig. 6, the N doping nickel hydroxide nano chip arrays are continuous
After catalysis 8 hours, catalytic activity is not reduced significantly still.
Embodiment 2
A, 4.2g nickel sulfate, 1.2g sodium peroxydisulfate, 6mL ammonium hydroxide, 40mL deionized water are weighed, and mixed liquor is made；
B, by the carbon cloth be immersed in step a preparation mixed liquor in, impregnate 50min after take out the carbon cloth and spend from
Sub- water washing and drying；
C, ammonia is injected into the gaseous plasma implanter, and adjusts the gaseous plasma implanter and carries out
The power of ion implanting processing is 300W, and voltage is 15kV pulsed bias, and then generates nitrogenous plasma, then by step
The carbon cloth of b preparation carries out ion implanting in the gaseous plasma implanter, keeps 60min to get to uprightly
The N doping nickel hydroxide nano chip arrays being grown on the carbon cloth.
Each N doping nickel hydroxide nano piece nitrogen content is 5.6at%.
Embodiment 3
A, 4.2g nickel sulfate, 1.2g sodium peroxydisulfate, 6mL ammonium hydroxide, 40mL deionized water are weighed, and mixed liquor is made；
B, by the carbon cloth be immersed in step a preparation mixed liquor in, impregnate 80min after take out the carbon cloth and spend from
Sub- water washing and drying；
C, nitrogen is injected into the gaseous plasma implanter, and adjusts the gaseous plasma implanter and carries out
The power of ion implanting processing is 500W, and voltage is 20kV pulsed bias, and then generates nitrogenous plasma, then by step
The carbon cloth of b preparation carries out ion implanting in the gaseous plasma implanter, keeps 90min to get to uprightly
The N doping nickel hydroxide nano chip arrays being grown on the carbon cloth.
Each N doping nickel hydroxide nano piece nitrogen content is 8.2at%.
Embodiment 4
A, 4.2g nickel sulfate, 1.2g sodium peroxydisulfate, 6mL ammonium hydroxide, 40mL deionized water are weighed, and mixed liquor is made；
B, by the carbon cloth be immersed in step a preparation mixed liquor in, impregnate 80min after take out the carbon cloth and spend from
Sub- water washing and drying；
C, ammonia is injected into the gaseous plasma implanter, and adjusts the gaseous plasma implanter and carries out
The power of ion implanting processing is 500W, and voltage is 20kV pulsed bias, and then generates nitrogenous plasma, then by step
The carbon cloth of b preparation carries out ion implanting in the gaseous plasma implanter, keeps 120min to get to uprightly
The N doping nickel hydroxide nano chip arrays being grown on the carbon cloth.
Each N doping nickel hydroxide nano piece nitrogen content is 10at%.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of preparation method of N doping nickel hydroxide nano chip arrays, which comprises the following steps:
A, prepare nickel sulfate, sodium peroxydisulfate, ammonium hydroxide, deionized water mixed liquor；
B, carbon cloth is immersed in the mixed liquor of step a preparation, the carbon cloth is taken out after being soaked for a period of time and uses deionized water
It washs and dries；
C, the carbon cloth for preparing step b carries out ion implanting processing in gaseous plasma implanter to get to directly
The vertical N doping nickel hydroxide nano chip arrays being grown on the carbon cloth.
2. preparation method according to claim 1, which is characterized in that nickel sulfate, sodium peroxydisulfate, ammonia in the step a
Water is and the mass ratio of deionized water is 21:6:30:200.
3. preparation method according to claim 1, which is characterized in that the soaking time of carbon cloth described in the step b is
10min-80min。
4. preparation method according to claim 1, which is characterized in that the ion source of ion described in the step c is nitrogen
Gas or ammonia.
5. preparation method according to claim 1, which is characterized in that the gaseous plasma implanter carries out ion note
Entering power when handling is 100W-500W, and voltage is 10kV-20kV pulsed bias, and the ion implanting time is 10min-120min.
6. a kind of N doping nickel hydroxide nano chip arrays as obtained by any one of the claim 1-5 preparation method,
It is characterized in that, by multiple N doping nickel hydroxide nano piece vertical growths on carbon cloth and in array distribution；Each nitrogen is mixed
Miscellaneous nickel hydroxide nano piece rough surface, having a size of 300nm-800nm, with a thickness of 20nm-60nm, nitrogen content 1.5at%-
10at%.
7. a kind of application of N doping nickel hydroxide nano chip arrays as claimed in claim 6 in electrolysis water oxygen evolution reaction.
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|---|---|---|---|---|
| CN110038577A (en) * | 2019-05-20 | 2019-07-23 | 南昌航空大学 | Synthetic method of the one step growth in situ in the class alpha-phase nickel hydroxide nanometer sheet of carbon cloth substrate |
| CN110961128A (en) * | 2019-10-24 | 2020-04-07 | 武汉大学苏州研究院 | Metal-carbon nitrogen composite electrocatalytic material and preparation method thereof |
| CN113215613A (en) * | 2021-03-18 | 2021-08-06 | 武汉工程大学 | Selenium mixture array and preparation method and application thereof |
| CN113406170A (en) * | 2021-05-24 | 2021-09-17 | 华南理工大学 | Ni (OH) for non-enzymatic glucose detection2Nanosheet sensor and preparation method and application thereof |
| CN114220980A (en) * | 2021-12-08 | 2022-03-22 | 华中科技大学 | Nitrogen-embedded nickel ultrathin nanosheet and preparation method and application thereof |
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Cited By (6)
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| CN110038577A (en) * | 2019-05-20 | 2019-07-23 | 南昌航空大学 | Synthetic method of the one step growth in situ in the class alpha-phase nickel hydroxide nanometer sheet of carbon cloth substrate |
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| CN113215613A (en) * | 2021-03-18 | 2021-08-06 | 武汉工程大学 | Selenium mixture array and preparation method and application thereof |
| CN113406170A (en) * | 2021-05-24 | 2021-09-17 | 华南理工大学 | Ni (OH) for non-enzymatic glucose detection2Nanosheet sensor and preparation method and application thereof |
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Application publication date: 20190125 |