CN109256659B - Raman mixing visible laser light source and implementation method - Google Patents
Raman mixing visible laser light source and implementation method Download PDFInfo
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- CN109256659B CN109256659B CN201811356146.4A CN201811356146A CN109256659B CN 109256659 B CN109256659 B CN 109256659B CN 201811356146 A CN201811356146 A CN 201811356146A CN 109256659 B CN109256659 B CN 109256659B
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- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 13
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- 230000008878 coupling Effects 0.000 claims abstract description 57
- 238000010168 coupling process Methods 0.000 claims abstract description 57
- 238000005859 coupling reaction Methods 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 39
- 238000005086 pumping Methods 0.000 claims abstract description 29
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 230000010355 oscillation Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000004990 Smectic liquid crystal Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- QXSDKTDYKUJBRX-UHFFFAOYSA-K [O-]P([O-])([O-])=O.O.[Ti+4].[Rb+] Chemical compound [O-]P([O-])([O-])=O.O.[Ti+4].[Rb+] QXSDKTDYKUJBRX-UHFFFAOYSA-K 0.000 claims 2
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- GELHPRRLYXFJHB-UHFFFAOYSA-K P(=O)([O-])([O-])[O-].[O-2].[Ti+4].[Rb+] Chemical compound P(=O)([O-])([O-])[O-].[O-2].[Ti+4].[Rb+] GELHPRRLYXFJHB-UHFFFAOYSA-K 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 206010025415 Macular oedema Diseases 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- LSIRIHFTNDBDKD-UHFFFAOYSA-N [Rb].[O].[Ti] Chemical compound [Rb].[O].[Ti] LSIRIHFTNDBDKD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 201000010230 macular retinal edema Diseases 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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Abstract
The invention discloses a Raman mixing visible laser source and an implementation method, the Raman mixing visible laser source comprises a laser body, wherein a semiconductor laser pumping source, a total reflection cavity mirror, nd, YAG crystals, an acousto-optic Q regulator, a coupling cavity mirror, RTP crystals for cutting a near optical main shaft and an output cavity mirror are sequentially arranged in an optical path of the laser body, an oscillation cavity of 1064nm fundamental frequency laser is formed between the total reflection cavity mirror and the output cavity mirror, and the coupling cavity mirror and the output cavity mirror form a Raman cavity; the total reflection cavity mirror is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source, the coupling cavity mirror is plated with a second dielectric film, the output cavity mirror is plated with a third dielectric film, and the surfaces of the Nd-YAG crystal, the acousto-optic Q regulator and the RTP crystal are plated with antireflection dielectric films with the wave bands of 1060nm to 1150 nm. Above-mentioned technical scheme, structural design is reasonable, compact structure, with low costs, system is simple, job stabilization and convenient operation.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a Raman mixing visible laser source and an implementation method.
Background
The 570nm yellow laser has important application in various fields such as medical cosmetology, laser display, biomedicine, astronomy and the like. For example, the device can be used for ground measurement and collimation under the condition of illumination with fog, can be used for medical treatment of fundus macular oedema, cosmetic removal of redundant capillaries and the like, and can be used for detection of laser radar and space targets in military.
Laser materials that can obtain 570nm laser by direct frequency doubling have not been found. There are reports of the following by Nd: the fundamental light sum frequency of the YAG crystals at 1444nm and 946nm is generated (optical precision engineering, 2010, 18 (4): 805-808). Since these two fundamental lasers correspond to Nd: the two weaker gain lines of the YAG material, therefore, the conversion efficiency is lower. And the laser system for simultaneously obtaining two weak gain spectrums is relatively complex, and two Nd: the YAG laser outputs two fundamental frequency lights, and then performs out-cavity sum frequency. The 570nm yellow light device realized by the technical scheme has relatively high cost, dispersed structure, complex system, inconvenient use and poor practicability.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide the Raman mixing visible laser light source which has the advantages of reasonable structural design, compact structure, low cost, simple system, stable work and convenient operation.
In order to achieve the above purpose, the present invention provides the following technical solutions: the Raman mixing visible laser light source comprises a laser body, wherein a semiconductor laser pumping source, a total reflection cavity mirror and Nd: YAG crystal, acousto-optic Q regulator, coupling cavity mirror, RTP crystal cut by optical main shaft and output cavity mirror, wherein the oscillation cavity of 1064nm fundamental frequency laser is formed between the total reflection cavity mirror and the output cavity mirror, and the coupling cavity mirror and the output cavity mirror form Raman cavity; the total reflection cavity mirror is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source, and the first dielectric film is high in reflection to the wavelength band of 1060nm to 1150 nm; the coupling cavity mirror is plated with a second dielectric film which is highly reflective in 570nm and 1090 to 1150nm bands and transmits a 1064nm wavelength; the output cavity mirror is plated with a third dielectric film which is highly reflective to 1060nm to 1150nm wave bands and highly transmissive to 570nm wave bands; the Nd: YAG crystal, acousto-optic Q regulator and RTP crystal surface are plated with 1060nm to 1150nm wave band antireflection dielectric film;
the RTP crystal is a titanium oxide rubidium phosphate crystal cut by a near optical spindle, and pump light output by a semiconductor laser pump source is pumped by a total reflection cavity mirror to pump Nd: YAG crystal, in turn, is composed of Nd: YAG crystal generates 1064nm photon, and forms laser by oscillating in oscillation cavity composed of total reflection cavity mirror and output cavity mirror, pulse laser with high peak value formed by modulating light intensity by acousto-optic Q regulator drives RTP crystal to generate Raman conversion, under the action of coating film of coupling cavity mirror and output cavity mirror, 271cm based on RTP crystal -1 Is 687cm -1 The first-order Stokes light of (a) simultaneously oscillates in a Raman cavity formed by the coupling cavity mirror and the output cavity mirror, and the light-passing direction angle of the RTP crystal meets 271cm based on the RTP crystal -1 Is of Stokes light of second order and 687cm -1 The phase matching angle of the first-order Stokes light of the sum frequency realizes the sum frequency conversion in the same RTP crystal to generate 570nm yellow laser, and the yellow laser is directly output by an output cavity mirror;
when the RTP crystal is subjected to smectic X-axis optical principal axis cutting along the light passing direction theta=90°, phi=5.5°, the RTP crystal is subjected to sum frequency of two wavelengths; whereas an RTP crystal with the light transmission direction of X-axis direction θ=90°, Φ=0° has the strongest raman gain;
the RTP crystal cut at the optical spindle serves as both the raman medium and the sum frequency crystal.
The invention is further arranged to: the semiconductor laser pumping source, the total reflection cavity mirror and the Nd: YAG crystal, acousto-optic Q-switching device, coupling cavity mirror, RTP crystal cut by optical spindle and output cavity mirror are set up from left to right in turn.
The invention is further arranged to: the semiconductor laser pumping source, the total reflection cavity mirror and the Nd: YAG crystal, acousto-optic Q regulator, coupling cavity mirror, RTP crystal and output cavity mirror are connected by bracket or connecting piece, and gaps are left between each component.
The invention is further arranged to: the semiconductor laser pumping source is a 808nm semiconductor laser or a 885nm semiconductor laser.
The invention is further arranged to: the first dielectric film plated by the total reflection cavity mirror comprises a first left dielectric film plated on the left surface of the total reflection cavity mirror and having high transmission of 808nm or 885nm of the semiconductor laser pumping source wavelength, and a first right dielectric film plated on the right surface of the total reflection cavity mirror and having high transmission of 808nm or 885nm of the semiconductor laser pumping source wavelength, and the first right dielectric film has high reflection of 1060 to 1150nm wave bands.
The invention is further arranged to: the second dielectric film of the coupling cavity mirror comprises a second left dielectric film which is plated on the left side of the coupling cavity mirror and has high transmission to 1064nm wavelength, and a second right dielectric film which is plated on the right side of the coupling cavity mirror and has high reflection to 570nm and 1090 to 1150nm wave bands and has high transmission to 1064nm wavelength.
The invention also provides a method for realizing the Raman mixing visible laser light source, which comprises the following steps: the semiconductor laser pumping source, the total reflection cavity mirror and the Nd are sequentially arranged in the light path of the laser body: YAG crystal, acousto-optic Q regulator, coupling cavity mirror, RTP crystal cut by optical main shaft and output cavity mirror, wherein the oscillation cavity of 1064nm fundamental frequency laser is formed between the total reflection cavity mirror and the output cavity mirror, and the coupling cavity mirror and the output cavity mirror form Raman cavity; the total reflection cavity mirror is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source, and the first dielectric film is high in reflection to the wavelength band of 1060nm to 1150 nm; the coupling cavity mirror is plated with a second dielectric film which is highly reflective in 570nm and 1090 to 1150nm bands and transmits a 1064nm wavelength; the output cavity mirror is plated with a third dielectric film which is highly reflective to 1060nm to 1150nm wave bands and highly transmissive to 570nm wave bands; the Nd: YAG crystal, acousto-optic Q regulator and RTP crystal surface are plated with 1060nm to 1150nm wave band antireflection dielectric film;
the RTP crystal is a titanium oxide rubidium phosphate crystal cut by a near optical spindle, and pump light output by a semiconductor laser pump source is pumped by a total reflection cavity mirror to pump Nd: YAG crystal, in turn, is composed of Nd:YAG crystal generates 1064nm photon, and forms laser by oscillating in oscillation cavity composed of total reflection cavity mirror and output cavity mirror, pulse laser with high peak value formed by modulating light intensity of acousto-optic Q regulator drives RTP crystal to generate Raman conversion, under the action of coupling cavity mirror and output cavity mirror coating film, 271cm based on RTP crystal -1 Is 687cm -1 The first-order Stokes light of (a) simultaneously oscillates in a Raman cavity formed by the coupling cavity mirror and the output cavity mirror, and the light-passing direction angle of the RTP crystal meets 271cm based on the RTP crystal -1 Is of Stokes light of second order and 687cm -1 The phase matching angle of the first-order Stokes light of the sum frequency realizes the sum frequency conversion in the same RTP crystal to generate 570nm yellow laser, and the yellow laser is directly output by an output cavity mirror;
when the RTP crystal is subjected to smectic X-axis optical principal axis cutting along the light passing direction theta=90°, phi=5.5°, the RTP crystal is subjected to sum frequency of two wavelengths; whereas an RTP crystal with the light transmission direction of X-axis direction θ=90°, Φ=0° has the strongest raman gain;
the RTP crystal cut by the optical spindle can be used as a Raman medium and a sum frequency crystal.
Preferably, the RTP crystal comprises 271cm -1 And 687cm -1 Two raman shifts; 271cm for 1064nm drive Raman -1 The wavelength of the first-order and second-order Stokes of the Raman frequency shift is 1096nm and 1130nm; corresponding 687cm -1 The wavelength of the first-order Stokes of the Raman frequency shift is 1149nm; 271cm of RTP crystal -1 Second order Stokes wavelengths 1130nm and 687cm for Raman frequency shift -1 The phase matching angle of the two light sum frequencies of the first order stokes wavelength 1149nm of the raman shift is θ=90°, Φ=5.5 °.
Preferably, the semiconductor laser pump source, the total reflection cavity mirror, nd: YAG crystal, acousto-optic Q-switching device, coupling cavity mirror, RTP crystal cut by optical spindle and output cavity mirror are set up from left to right sequentially; the semiconductor laser pumping source, the total reflection cavity mirror and the Nd: YAG crystal, acousto-optic Q regulator, coupling cavity mirror, RTP crystal and output cavity mirror are connected by bracket or connecting piece, and gaps are left between each component.
The invention has the advantages that: compared with the prior art, the invention has more reasonable structural arrangement and utilizes Nd: YAG crystal is used as laser crystal, and titanium oxygen Rubidium (RTP) crystal cut by optical main shaft is used as nonlinear optical crystal and is used as Raman medium and mixing (sum frequency) crystal, and by combining the coating design of coupling cavity mirror and output cavity mirror, nd: YAG crystal generated 1064nm laser driving RTP crystal generated 271cm based on RTP crystal -1 Is of Stokes light of second order and 687cm -1 The first-order Stokes light of (2) is subjected to the sum frequency of the same RTP crystal to realize 570nm yellow light laser. The optical spindle cut titanium rubidium oxide phosphate (RTP) crystal has stronger Raman gain and sum frequency characteristics between Stokes light generated, so that the Raman sum frequency process is completed in a single RTP crystal, the laser system is compact in structure, and 570nm yellow light with high conversion efficiency is generated. The device has the advantages of reasonable structural design, low cost, simple system, stable work, convenient operation and good practicability.
The invention is further described below with reference to the drawings and specific examples.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention;
fig. 2 is a schematic view of the crystal directions of RTP.
Detailed description of the preferred embodiments
In the description of the present embodiment, it should be noted that, if terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", "front", "rear", and the like are presented, the indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, only for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the indicated apparatus or element must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like, as used herein, are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance.
Referring to fig. 1 and 2, the raman mixing visible laser light source disclosed by the invention comprises a laser body, wherein a semiconductor laser pumping source 1, a total reflection cavity mirror 2 and Nd are sequentially arranged in an optical path of the laser body: YAG crystal 3, acousto-optic Q regulator 4, coupling cavity mirror 5, RTP crystal 6 cut by near optical main shaft and output cavity mirror 7, wherein oscillation cavity of 1064nm fundamental frequency laser is formed between total reflection cavity mirror 2 and output cavity mirror 7, coupling cavity mirror 5 and output cavity mirror 7 form Raman cavity; the total reflection cavity mirror 2 is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source, and the first dielectric film is high in reflection to the wavelength band of 1060nm to 1150 nm; the coupling cavity mirror 5 is plated with a second dielectric film which is highly reflective in 570nm and 1090 to 1150nm bands and transmits a 1064nm wavelength; the output cavity mirror 7 is plated with a third dielectric film which is highly reflective to 1060nm to 1150nm wave bands and highly transmissive to 570nm wave bands; the Nd: YAG crystal 3, acousto-optic Q regulator 4 and RTP crystal 6 surface plates the antireflection dielectric film of 1060nm to 1150nm wave band;
the RTP crystal 6 is a titanium oxide rubidium phosphate crystal cut by a near optical spindle, and pump light output by the semiconductor laser pump source 1 is pumped by the total reflection cavity mirror 2 to pump Nd: YAG crystal 3, in turn consisting of Nd: the YAG crystal 3 generates 1064nm photon, and forms laser by oscillating in an oscillating cavity formed by the total reflection cavity mirror 2 and the output cavity mirror 7, the pulse laser of which the light intensity is modulated by the acousto-optic Q regulator 4 to form a high peak value drives the RTP crystal 6 to generate Raman conversion, and under the film plating effect of the coupling cavity mirror 5 and the output cavity mirror 7, 271cm based on the RTP crystal 6 -1 Is 687cm -1 The first-order Stokes light of (a) simultaneously oscillates in a Raman cavity formed by the coupling cavity mirror 5 and the output cavity mirror 7, and the light-transmitting direction angle of the RTP crystal 6 meets 271cm based on the RTP crystal 6 -1 Is of Stokes light of second order and 687cm -1 The phase matching angle of the first-order Stokes light of the sum frequency realizes the sum frequency conversion in the same RTP crystal 6 to generate 570nm yellow laser, and the yellow laser is directly output by an output cavity mirror 7;
when the RTP crystal is subjected to smectic X-axis optical principal axis cutting along the light passing direction theta=90°, phi=5.5°, the RTP crystal is subjected to sum frequency of two wavelengths; whereas an RTP crystal with the light transmission direction of X-axis direction θ=90°, Φ=0° has the strongest raman gain;
the RTP crystal cut at the optical spindle serves as both the raman medium and the sum frequency crystal.
Preferably, the semiconductor laser pump source 1, the total reflection cavity mirror 2, nd: YAG crystal 3, acousto-optic Q regulator 4, coupling cavity mirror 5, RTP crystal 6 cut by optical spindle and output cavity mirror 7 are set up from left to right in order. The semiconductor laser pumping source 1, the total reflection cavity mirror 2 and the Nd: YAG crystal 3, acousto-optic Q regulator 4, coupling cavity mirror 5, RTP crystal 6 and output cavity mirror 7 are respectively connected by the existing bracket or connecting piece, and gaps are reserved among the components. This technical solution is well known to those skilled in the art, and the present embodiment is not described in detail.
Preferably, the semiconductor laser pump source 1 is a 808nm semiconductor laser or a 885nm semiconductor laser.
Preferably, the first dielectric film plated on the total reflection cavity mirror 2 includes a first left dielectric film plated on the left surface of the total reflection cavity mirror 2 and having high transmission for the wavelength of 808nm or 885nm of the semiconductor laser pump source 1 and a first right dielectric film plated on the right surface of the total reflection cavity mirror 2 and having high transmission for the wavelength of 808nm or 885nm of the semiconductor laser pump source 1, and the first right dielectric film has high reflection for 1060 to 1150nm bands (with emphasis of 1064nm and 1096nm bands).
Preferably, the second dielectric film of the coupling cavity mirror 5 includes a second left dielectric film plated on the left side of the coupling cavity mirror 5 and having high transmission to 1064nm wavelength and a second right dielectric film plated on the right side of the coupling cavity mirror 5 and having high reflection to 570nm and 1090 to 1150nm bands (bands of emphasis 1096nm, 1130nm and 1149 nm) and having high transmission to 1064nm wavelength.
In order to make the structure of the present invention more reasonable, as an optimization, the left side of the output cavity mirror 7 is plated with a third dielectric film with high reflection in 1060 to 1150nm bands (focus 1064nm, 1096nm, 1130nm and 1149 nm) and high transmission in 570nm, and the right side of the output cavity mirror 7 can be plated with an antireflection dielectric film with wavelength of 570nm or not so as to reduce the reflection loss on the right side. In order to reduce the residual reflection losses in the cavity, nd: YAG crystal 3, acousto-optic Q regulator 4 and RTP crystal 6 cut by near optical main shaft are coated with 1060 to 1150nm wave band (focus 1064nm, 1096nm, 1130nm and 1149 nm) antireflection dielectric film, which is beneficial to improving laser output power and efficiency. The dielectric film is plated by silicon dioxide and zirconium dioxide materials alternately to achieve the purpose of the expected cavity mirror.
RTP crystal 6 is a crystal with a strong Raman gain, and contains 271cm -1 And 687cm -1 Two stronger raman shifts. 271cm for 1064nm drive Raman -1 The wavelength of the first-order and second-order Stokes of the Raman frequency shift is 1096nm and 1130nm; corresponding 687cm -1 The first order Stokes wavelength of the Raman shift was 1149nm. 271cm of RTP crystal -1 Second order Stokes wavelengths 1130nm and 687cm for Raman frequency shift -1 The phase matching angle of the two light sum frequencies of the first order stokes wavelength 1149nm of the raman shift is θ=90°, Φ=5.5 °.
The RTP crystal 6 of this embodiment is cut in a direction close to the X-axis, i.e., in fig. 2 (θ=90°, Φ=5.5°). If the light passing directions are different, the intensities of the Raman gains are different, and if the light passing directions are the X axis, the Raman gain is strongest, namely the Raman conversion efficiency is highest.
The invention also provides a method for realizing the Raman mixing visible laser light source, which comprises the following steps: the semiconductor laser pumping source, the total reflection cavity mirror and the Nd are sequentially arranged in the light path of the laser body: YAG crystal, acousto-optic Q regulator, coupling cavity mirror, RTP crystal cut by optical main shaft and output cavity mirror, wherein the oscillation cavity of 1064nm fundamental frequency laser is formed between the total reflection cavity mirror and the output cavity mirror, and the coupling cavity mirror and the output cavity mirror form Raman cavity; the total reflection cavity mirror is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source, and the first dielectric film is high in reflection to the wavelength band of 1060nm to 1150 nm; the coupling cavity mirror is plated with a second dielectric film which is highly reflective to 570nm and 1090 to 1150nm bands and transmits a 1064nm band; the output cavity mirror is plated with a third dielectric film which has high reflection to 1060nm to 1150nm wave bands and high transmission to 570nm wave bands; the Nd: YAG crystal, acousto-optic Q regulator and RTP crystal surface are plated with 1060nm to 1150nm wave band antireflection dielectric film;
the RTP crystal is a titanium oxide rubidium phosphate crystal cut by a near optical spindle, and pump light output by a semiconductor laser pump source is pumped by a total reflection cavity mirror to pump Nd: YAG crystal, in turn, is composed of Nd: YAG crystal generates 1064nm photon, and forms laser by oscillating in oscillation cavity composed of total reflection cavity mirror and output cavity mirror, pulse laser with high peak value formed by modulating light intensity of acousto-optic Q regulator drives RTP crystal to generate Raman conversion, under the action of coupling cavity mirror and output cavity mirror coating film, 271cm based on RTP crystal -1 Is 687cm -1 The first-order Stokes light of (a) simultaneously oscillates in a Raman cavity formed by the coupling cavity mirror and the output cavity mirror, and the light-passing direction angle of the RTP crystal meets 271cm based on the RTP crystal -1 Is of Stokes light of second order and 687cm -1 The phase matching angle of the first-order Stokes light of the sum frequency realizes the sum frequency conversion in the same RTP crystal to generate 570nm yellow laser, and the yellow laser is directly output by an output cavity mirror;
when the RTP crystal is subjected to smectic X-axis optical principal axis cutting along the light passing direction theta=90°, phi=5.5°, the RTP crystal is subjected to sum frequency of two wavelengths; whereas an RTP crystal with the light transmission direction of X-axis direction θ=90°, Φ=0° has the strongest raman gain;
the RTP crystal cut by the optical spindle can be used as a Raman medium and a sum frequency crystal.
Preferably, the RTP crystal comprises 271cm -1 And 687cm -1 Two raman shifts; 271cm for 1064nm drive Raman -1 The wavelength of the first-order and second-order Stokes of the Raman frequency shift is 1096nm and 1130nm; corresponding 687cm -1 The wavelength of the first-order Stokes of the Raman frequency shift is 1149nm; 271cm of RTP crystal -1 Second order Stokes wavelengths 1130nm and 687cm for Raman frequency shift -1 The phase matching angle of two light sum frequencies of the first order stokes wavelength 1149nm of the raman shift is θ=90°, Φ=5.5°;
preferably, the semiconductor laser pump source, the total reflection cavity mirror, nd: YAG crystal, acousto-optic Q-switching device, coupling cavity mirror, RTP crystal cut by optical spindle and output cavity mirror are set up from left to right sequentially; the semiconductor laser pumping source, the total reflection cavity mirror and the Nd: YAG crystal, acousto-optic Q regulator, coupling cavity mirror, RTP crystal and output cavity mirror are connected by bracket or connecting piece, and gaps are left between each component.
In practical application, nd: YAG crystal 3 is used as laser crystal, RTP crystal 6 is used as nonlinear optical crystal and is used as Raman medium and mixing (sum frequency) crystal, pump light output by semiconductor laser pump source 1 is transmitted through total reflection cavity mirror, nd: YAG crystal 3 oscillates in oscillation cavity composed of total reflection cavity mirror 2 and output cavity mirror 7 to form laser, pulse laser with high peak value formed by action of acousto-optic Q regulator 4 drives RTP crystal 6 to generate Raman conversion, under action of coating film of coupling cavity mirror 5 and output cavity mirror 7, 271cm based on RTP crystal 6 -1 Is 687cm -1 The first-order Stokes light of (a) simultaneously oscillates in a Raman cavity formed by the coupling cavity mirror 5 and the output cavity mirror 7, and the light-transmitting direction angle of the RTP crystal 6 meets 271cm based on the RTP crystal 6 -1 Is of Stokes light of second order and 687cm -1 The phase matching angle of the first order Stokes light of the sum frequency is realized in the same RTP crystal 6, the sum frequency conversion is carried out to generate 570nm yellow laser, and the yellow laser is directly output by the output cavity mirror 7.
The optical spindle cut titanium rubidium oxide phosphate (RTP) crystal has stronger Raman gain and sum frequency characteristics between Stokes light generated, so that the Raman sum frequency process is completed in a single RTP crystal, the laser system is compact in structure, and 570nm yellow light with high conversion efficiency is generated. The device has the advantages of reasonable structural design, low cost, simple system, stable work, convenient operation and good practicability.
The foregoing embodiments are provided for further explanation of the present invention and are not to be construed as limiting the scope of the present invention, and some insubstantial modifications and variations of the present invention, which are within the scope of the invention, will be suggested to those skilled in the art in light of the foregoing teachings.
Claims (9)
1. The utility model provides a Raman mixing visible laser light source, includes laser instrument body, its characterized in that: the optical path of the laser body is sequentially provided with a semiconductor laser pumping source (1), a total reflection cavity mirror (2) and Nd: YAG crystal (3), acousto-optic Q regulator (4), coupling cavity mirror (5), RTP crystal (6) and output cavity mirror (7), wherein an oscillation cavity of 1064nm fundamental frequency laser is formed between the total reflection cavity mirror (2) and the output cavity mirror (7), and the coupling cavity mirror (5) and the output cavity mirror (7) form a Raman cavity; the total reflection cavity mirror (2) is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source (1), and the first dielectric film is high in reflection to 1060nm to 1150nm wave bands at the same time; the coupling cavity mirror (5) is plated with a second dielectric film which is highly reflective in 570nm and 1090 to 1150nm bands and transmits 1064nm wavelengths; the output cavity mirror (7) is plated with a third dielectric film which is highly reflective to 1060nm to 1150nm wave bands and highly transmissive to 570nm wave bands; the Nd: YAG crystal (3), acousto-optic Q regulator (4) and RTP crystal (6) surface are plated with 1060nm to 1150nm wave band antireflection dielectric film;
the RTP crystal (6) is a titanium oxygen rubidium phosphate crystal cut by a near optical spindle, and pump light output by the semiconductor laser pump source (1) is pumped by the total reflection cavity mirror (2) to pump Nd: YAG crystal (3), and then consists of Nd: the YAG crystal (3) generates 1064nm photons which oscillate in an oscillation cavity formed by the total reflection cavity mirror (2) and the output cavity mirror (7) to form laser, the acousto-optic Q-regulator (4) modulates the light intensity to form high peak pulse laser to drive the RTP crystal (6) to perform Raman conversion, and under the film plating effect of the coupling cavity mirror (5) and the output cavity mirror (7), the RTP crystal (6) is based on 271cm -1 Is 687cm -1 The first-order Stokes light of (2) simultaneously oscillates in a Raman cavity formed by a coupling cavity mirror (5) and an output cavity mirror (7), and the light-transmitting direction angle of the RTP crystal (6) meets 271cm based on the RTP crystal (6) -1 Is of Stokes light of second order and 687cm -1 The phase matching angle of the first-order Stokes light of the sum frequency is realized in the same RTP crystal (6) to generate 570nm yellow laser by the sum frequency conversion, and the yellow laser is directly output by an output cavity mirror (7);
when the RTP crystal is subjected to smectic X-axis optical principal axis cutting along the light passing direction theta=90°, phi=5.5°, the RTP crystal is subjected to sum frequency of two wavelengths; whereas an RTP crystal with the light transmission direction of X-axis direction θ=90°, Φ=0° has the strongest raman gain;
the RTP crystal (6) cut by the optical spindle is used as a Raman medium and a sum frequency crystal.
2. A raman mixing visible laser source according to claim 1, characterized in that: the semiconductor laser pumping source (1), the total reflection cavity mirror (2) and the Nd: YAG crystal (3), acousto-optic Q regulator (4), coupling cavity mirror (5), RTP crystal (6) and output cavity mirror (7) of passing light optics main shaft cutting set up from left to right in proper order.
3. A raman mixing visible laser source according to claim 1, characterized in that: the semiconductor laser pumping source (1), the total reflection cavity mirror (2) and the Nd: YAG crystal (3), acousto-optic Q regulator (4), coupling cavity mirror (5), RTP crystal (6) and output cavity mirror (7) are connected by bracket or connecting piece, and gaps are left between each component.
4. A raman mixing visible laser source according to claim 1, characterized in that: the semiconductor laser pumping source (1) is a 808nm semiconductor laser or a 885nm semiconductor laser.
5. A raman mixing visible laser source according to claim 1, characterized in that: the first dielectric film plated on the total reflection cavity mirror (2) comprises a first left dielectric film plated on the left surface of the total reflection cavity mirror (2) and having high transmission of 808nm or 885nm of the wavelength of the semiconductor laser pumping source (1) and a first right dielectric film plated on the right surface of the total reflection cavity mirror (2) and having high transmission of 808nm or 885nm of the wavelength of the semiconductor laser pumping source (1), and the first right dielectric film has high reflection of 1060 to 1150nm wave bands.
6. A raman mixing visible laser source according to claim 1, characterized in that: the second dielectric film of the coupling cavity mirror (5) comprises a second left dielectric film which is plated on the left side of the coupling cavity mirror (5) and has high transmission to 1064nm wavelength, and a second right dielectric film which is plated on the right side of the coupling cavity mirror (5) and has high reflection to 570nm and 1090 to 1150nm wave bands and has high transmission to 1064nm wavelength.
7. A method for realizing a Raman mixing visible laser light source is characterized by comprising the following steps: the optical path of the laser body is sequentially provided with a semiconductor laser pumping source (1), a total reflection cavity mirror (2) and Nd: YAG crystal (3), acousto-optic Q regulator (4), coupling cavity mirror (5), RTP crystal (6) and output cavity mirror (7), wherein an oscillation cavity of 1064nm fundamental frequency laser is formed between the total reflection cavity mirror (2) and the output cavity mirror (7), and the coupling cavity mirror (5) and the output cavity mirror (7) form a Raman cavity; the total reflection cavity mirror (2) is plated with a first dielectric film with high transmission to the wavelength of the semiconductor laser pumping source (1), and the first dielectric film is high in reflection to 1060nm to 1150nm wave bands at the same time; the coupling cavity mirror (5) is plated with a second dielectric film which is highly reflective in 570nm and 1090 to 1150nm bands and transmits 1064nm wavelengths; the output cavity mirror (7) is plated with a third dielectric film which is highly reflective to 1060nm to 1150nm wave bands and highly transmissive to 570nm wave bands; the Nd: YAG crystal (3), acousto-optic Q regulator (4) and RTP crystal (6) surface are plated with 1060nm to 1150nm wave band antireflection dielectric film;
the RTP crystal (6) is a titanium oxygen rubidium phosphate crystal cut by a near optical spindle, and pump light output by the semiconductor laser pump source (1) is pumped by the total reflection cavity mirror (2) to pump Nd: YAG crystal (3), and then consists of Nd: the YAG crystal (3) generates 1064nm photons which oscillate in an oscillation cavity formed by the total reflection cavity mirror (2) and the output cavity mirror (7) to form laser, the acousto-optic Q-regulator (4) modulates the light intensity to form high peak pulse laser to drive the RTP crystal (6) to perform Raman conversion, and under the film plating effect of the coupling cavity mirror (5) and the output cavity mirror (7), the RTP crystal (6) is based on 271cm -1 Is 687cm -1 The first-order Stokes light of (2) simultaneously oscillates in a Raman cavity formed by a coupling cavity mirror (5) and an output cavity mirror (7), and the light-transmitting direction angle of the RTP crystal (6) meets 271cm based on the RTP crystal (6) -1 Is of Stokes light of second order and 687cm -1 Phase matching angle of first order Stokes light of sum frequency, realizes sum frequency conversion in the same RTP crystal (6) to generate 570nm yellow laser, and is output by a cavity mirror (7) Directly outputting;
when the RTP crystal is subjected to smectic X-axis optical principal axis cutting along the light passing direction theta=90°, phi=5.5°, the RTP crystal is subjected to sum frequency of two wavelengths; whereas an RTP crystal with the light transmission direction of X-axis direction θ=90°, Φ=0° has the strongest raman gain;
the RTP crystal (6) cut by the optical spindle is used as a Raman medium and a sum frequency crystal.
8. The method for realizing the raman mixing visible laser light source according to claim 7, wherein the method comprises the following steps: RTP crystal (6) comprises 271cm -1 And 687cm -1 Two raman shifts; 271cm for 1064nm drive Raman -1 The wavelength of the first-order and second-order Stokes of the Raman frequency shift is 1096nm and 1130nm; the corresponding wavelength of first-order Stokes of 687cm-1 Raman frequency shift is 1149nm; 271cm of RTP crystal -1 Second order Stokes wavelengths 1130nm and 687cm for Raman frequency shift -1 The phase matching angle of the two light sum frequencies of the first order stokes wavelength 1149nm of the raman shift is θ=90°, Φ=5.5 °.
9. The method for realizing the raman mixing visible laser light source according to claim 8, wherein the method comprises the following steps: the semiconductor laser pumping source (1), the total reflection cavity mirror (2) and the Nd: the YAG crystal (3), the acousto-optic Q regulator (4), the coupling cavity mirror (5), the RTP crystal (6) cut by the optical spindle and the output cavity mirror (7) are sequentially arranged from left to right; the semiconductor laser pumping source (1), the total reflection cavity mirror (2) and the Nd: YAG crystal (3), acousto-optic Q regulator (4), coupling cavity mirror (5), RTP crystal (6) and output cavity mirror (7) are connected by bracket or connecting piece, and gaps are left between each component.
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Application publication date: 20190122 Assignee: Wenzhou Ningguang Technology Co.,Ltd. Assignor: Wenzhou University Contract record no.: X2024330000119 Denomination of invention: A Raman mixing visible laser source and its implementation method Granted publication date: 20231117 License type: Common License Record date: 20240614 Application publication date: 20190122 Assignee: CHANGCHUN NEW INDUSTRIES OPTOELECTRONICS TECH. CO.,LTD. Assignor: Wenzhou University Contract record no.: X2024330000116 Denomination of invention: A Raman mixing visible laser source and its implementation method Granted publication date: 20231117 License type: Common License Record date: 20240614 |