CN109256431A - A kind of bimetallic nano layer back contacts and its preparation method and application for throwing silicon solar cell for undoped heterogeneous N-shaped list - Google Patents
A kind of bimetallic nano layer back contacts and its preparation method and application for throwing silicon solar cell for undoped heterogeneous N-shaped list Download PDFInfo
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- CN109256431A CN109256431A CN201810904607.0A CN201810904607A CN109256431A CN 109256431 A CN109256431 A CN 109256431A CN 201810904607 A CN201810904607 A CN 201810904607A CN 109256431 A CN109256431 A CN 109256431A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 239000002052 molecular layer Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011777 magnesium Substances 0.000 claims abstract description 12
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 69
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000002061 vacuum sublimation Methods 0.000 claims description 5
- 241000209094 Oryza Species 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 4
- 235000009566 rice Nutrition 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 3
- 206010054949 Metaplasia Diseases 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 230000015689 metaplastic ossification Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of bimetallic nano layer back contacts and its preparation method and application that silicon solar cell is thrown for undoped heterogeneous N-shaped list.The back contacts are that N-shaped list throws the Nano ultrathin metal attachment layer that the silicon back side is successively coated with and electronic selection transmits nano metal layer；The Nano ultrathin metal attachment layer is aluminium, silver or gold, with a thickness of 0.5~1 nm；The electronic selection transmission nano metal layer is magnesium, with a thickness of 5~20 nm.Contact and adhesive force of the electronic selection transmission nano metal layer with silicon are more excellent in bimetallic nano layer back contacts provided by the invention, it can reduce metal electrode work function, it is more advantageous to transmission of the electronics from silicon to electrode, and then improves the energy conversion efficiency that undoped heterogeneous N-shaped list throws silicon solar cell.And the preparation process of the bimetallic nano layer back contacts is simple, and it is low in cost without annealing process, preparation process and properties of product have been combined, has been suitable for industrial-scale metaplasia and produces.
Description
Technical field
The invention belongs to solar battery process technical fields, in particular to a kind of to throw silicon for undoped heterogeneous N-shaped list
Bimetallic nano layer back contacts of solar cell and its preparation method and application.
Background technique
Undoped heterogeneous N-shaped list throws silicon solar cell (Dopant-Free Heterojunction Solar Cells
Based on n-type one side polished Sillicon) since its preparation process is without carrying out high temperature dopant, it adopts
Organic polymer and crystal silicon are formed into p-n heterojunction with solution processing method and substitute traditional diffusion technique, is greatly reduced heterogeneous
The cost for crystallizing silicon solar cell, quickly grows with potential application prospect.
In traditional crystal silicon solar battery, back contacts mostly use high temperature dopant to prepare, however the preparation method causes too
The cost in positive electricity pond improves, and is unsuitable for throwing silicon solar cell for the undoped heterogeneous N-shaped list of low cost.Liquid Ga/In alloy
Electrode is limited to preparation process, and repeatability is poor.Solwution method prepares back contacts, then needs first to carry out at edge sealing battery surrounding
Reason, this adds increased the complexity of preparation process.If directly using Al or Ag as back electrode, ohm can not be formed with silicon and is connect
Touching, contact resistance is larger, causes solar cell energy conversion efficiency obtained lower.
Currently, have the method that the undoped heterogeneous N-shaped list of document report improvement throws silicon solar cell energy conversion efficiency,
Including the positive structuring of crystal silicon, improve contact of the organic layer with silicon, the optimization of hole selective exposure, the optimization of back contacts,
But the optimization of back contacts in terms of preparation process, preparation cost and cell power conversion efficiency still up for further
Improve and is promoted.
Summary of the invention
It is simple, preparation low cost for undoped heterogeneous N-shaped list that the purpose of the present invention is to provide a kind of preparation process
The bimetallic nano layer back contacts for throwing silicon solar cell, the energy that silicon solar cell is thrown to improve undoped heterogeneous N-shaped list turn
Change efficiency.Bimetallic nano layer back contacts of the present invention are by throwing the nanometer that the silicon back side successively plates specific thicknesses in N-shaped list
Super thin metal adhesive layer and electronic selection transmit nano metal layer, so that the work function of N-shaped list throwing silicon and electrode is more
Matching, is conducive to electron extraction, can finally improve the performance of device, improve the energy conversion efficiency of battery.
Another object of the present invention is to provide the nano double gold that silicon solar cell is thrown for undoped heterogeneous N-shaped list
Belong to the preparation method of layer back contacts.
A further object of the present invention is to provide the nano double gold that silicon solar cell is thrown for undoped heterogeneous N-shaped list
Belong to the application of layer back contacts.
Above-mentioned purpose of the invention is achieved by following scheme:
A kind of bimetallic nano layer back contacts for throwing silicon solar cell for undoped heterogeneous N-shaped list, the back contacts are N-shaped list
Throw the Nano ultrathin metal attachment layer and electronic selection transmission nano metal layer that the silicon back side is successively coated with；The Nano ultrathin gold
Category adhesive layer is aluminium, silver or gold, with a thickness of 0.5~1 nm；The electronic selection transmission nano metal layer is magnesium, thickness
For 5~20 nm.
Back contacts of the present invention are that the Nano ultrathin metal attachment layer of specific thicknesses and electronic selection transmit nanogold
Belong to layer, wherein Nano ultrathin metal attachment layer can increase contact and adhesive force of the electronic selection transmission nano metal layer with silicon；
Electronic selection transmission nano metal layer can reduce work function, be conducive to the transmission and extraction of electronics, and then improve undoped different
The energy conversion efficiency of matter N-shaped list throwing silicon solar cell.
The optimization of Nano ultrathin metal attachment layer and electronic selection transmission nano metal thickness degree is to undoped heterogeneous N-shaped
Single transfer efficiency for throwing silicon solar cell is most important.Therefore, in order to guarantee that undoped heterogeneous N-shaped list throws turning for silicon solar cell
The improvement result for changing efficiency is best, and inventor transmits nano metal layer for Nano ultrathin metal attachment layer and electronic selection
Thickness is probed into.During the deposition process, it adjusts Nano ultrathin metal attachment layer and electronic selection transmits nano metal layer
Thickness, and the transfer efficiency that the undoped heterogeneous N-shaped list under respective thickness throws silicon solar cell is detected, to reach undoped different
The transfer efficiency that matter N-shaped list throws silicon solar cell optimizes, and can be widely applied to undoped heterogeneous N-shaped list and throws silicon solar cell
In back contacts.
If the thickness of Nano ultrathin metal attachment layer is blocked up perhaps excessively thin or electronic selection transmits nano metal layer
Thickness is blocked up or excessively thin, is unfavorable for the extraction and transmission of electronics, and the energy conversion efficiency of battery can decline.
Preferably, the Nano ultrathin metal attachment layer is aluminium, with a thickness of 0.5 nm.
Preferably, electronic selection transmission nano metal layer with a thickness of 10 nm.
The also protection bimetallic nano layer back for throwing silicon solar cell for undoped heterogeneous N-shaped list connects the present invention simultaneously
The preparation method of touching, includes the following steps:
S1. the oxide layer that undoped heterogeneous N-shaped list throws silicon chip surface is removed, clean and surface non-oxidation layer N-shaped list is obtained and throws
Silicon wafer；
S2. the silicon back side being thrown in the undoped heterogeneous N-shaped list that step S1 is obtained, Nano ultrathin metal is plated using Vacuum sublimation
Adhesive layer；
S3. electronic selection transmission is plated using Vacuum sublimation on the Nano ultrathin metal attachment layer that step S2 is obtained
The bimetallic nano layer back contacts can be obtained in nano metal layer；
Wherein in step S2 Nano ultrathin metal attachment layer with a thickness of 0.5~1 nm；Electronic selection transmission is received in step S3
Rice metal layer with a thickness of 5~20 nm.
Preferably, in step S2, the deposition rate of Nano ultrathin metal attachment layer is 0.01~0.1/s；In step S3
The deposition rate that electronic selection transmits nano metal layer is 0.03~3/s.
It is highly preferred that the deposition rate of Nano ultrathin metal attachment layer is 0.03/s in step S2；In step S3, electricity
The deposition rate of sub- selectivity transmission nano metal layer is 0.25/s.
Preferably, the detailed process of step S1 is that undoped heterogeneous N-shaped list is thrown silicon wafer to be soaked in hydrofluoric acid solution
Except the oxide layer of silicon chip surface.
Preferably, the concentration of the hydrofluoric acid is 5~10 M, and soaking time is 2~10 min.
It is highly preferred that the concentration of the hydrofluoric acid is 10 M, soaking time is 5 min.
The bimetallic nano layer back contacts for throwing silicon solar cell for undoped heterogeneous N-shaped list are preparing solar cell
In application it is also within the scope of the present invention.
The present invention also protects a kind of undoped heterogeneous N-shaped list comprising the bimetallic nano layer back contacts to throw silicon sun electricity
Pond.
Compared with prior art, the invention has the following advantages:
Bimetallic nano layer back contacts provided by the invention can drop so that N-shaped list throws silicon and the energy level of metal electrode more matches
Low work function is more advantageous to the extraction and transmission of electronics, and then improves the energy turn that undoped heterogeneous N-shaped list throws silicon solar cell
Change efficiency；And the preparation process of the bimetallic nano layer back contacts is simple, low in cost without annealing process while simultaneous
Preparation process and properties of product have been cared for, has been suitable for industrial-scale metaplasia and produces.
Detailed description of the invention
Fig. 1 is the electric piezo-electric that the undoped heterogeneous N-shaped list of Ag0.5Mg10 bimetallic nano layer back contacts throws silicon solar cell
Current density curve.
Specific embodiment
The present invention is made combined with specific embodiments below and further being elaborated, the embodiment is served only for explaining this
Invention, is not intended to limit the scope of the present invention.Test method as used in the following examples is normal unless otherwise specified
Rule method；Used material, reagent etc., unless otherwise specified, for the reagent and material commercially obtained.
The undoped heterogeneous N-shaped list of 1 bimetallic nano layer back contacts of embodiment throws the preparation of silicon solar cell
By taking Ag0.5Mg10 bimetallic nano layer back contacts as an example, wherein Ag is Nano ultrathin metal attachment layer, with a thickness of 0.5
nm；Mg is that electronic selection transmits nano metal layer, with a thickness of 10 nm；It its specific preparation process and is prepared by it non-
Adulterating heterogeneous N-shaped list throwing silicon solar cell, detailed process is as follows:
(1) clean N-shaped single-sided polishing silicon wafer (resistivity is 0.05-0.1 Ω cm) is in the hydrofluoric acid solution that concentration is 10 M
5 min of middle immersion are to go silicon, and drying；
(2) organic layer PEDOT:PSS(PH1000 is coated on the burnishing surface of silicon wafer after the treatment), 140 DEG C of annealing 10
min；
(3) silicon wafer that organic layer is coated in step (2) is moved into vacuum coating system, using Vacuum sublimation successively in silicon
The piece back side plates nano silver super thin metal adhesive layer and electronic selection transmission nano metal magnesium layer, wherein nano silver super thin metal
Adhesive layer with a thickness of 0.5nm, deposition rate is 0.03/s；Electronic selection transmit nano metal magnesium layer with a thickness of
10nm, deposition rate are 0.25/s；
(4) aluminium electrode is plated again on step (3) resulting back contacts, with a thickness of 200 nm；
(5) silver grating line electrode is deposited in organic level in step (4) resulting sample, with a thickness of 200 nm；It is prepared
Ag0.5Mg10 bimetallic nano layer back contacts.
Embodiment 2
Referring to the preparation method in embodiment 1, the difference is that changing the metal species of Nano ultrathin metal attachment layer, can fit
Metal has Al, Ag and Au；The thickness or electronic selection for changing Nano ultrathin metal attachment layer transmit nano metal magnesium
Layer thickness, provide several representative back contacts here, have Al0.5Mg10 bimetallic nano layer back contacts,
Al0.5Mg5 bimetallic nano layer back contacts, Al0.5Mg20 bimetallic nano layer back contacts and Au0.5Mg10 bimetallic nano layer
Back contacts.
The representative bimetallic nano layer back contacts of above-mentioned preparation are prepared into non-mix according to 1 the method for embodiment
Miscellaneous heterogeneous N-shaped list throws silicon solar cell, and detects its energy by current-voltage (I-V) test and convert (PCE) performance.
Wherein it is with the N-shaped list throwing silicon for not plating Nano ultrathin metal attachment layer and electronic selection transmission nano metal magnesium layer
Blank control example, the back contacts for only plating electronic selection transmission nano metal magnesium layer are comparative example 1(Mg10), testing result such as table
Shown in 1.
The parameters of 1 bimetallic nano layer back contacts device of table
In table 1V ocIndicate open-circuit voltage,J scIndicate that short circuit current, FF indicate fill factor, PCE indicates energy conversion efficiency.
As can be known from Table 1, compared with blank control example and comparative example 1, what is provided in the embodiment of the present invention is coated with specific thickness
The battery of the back contacts preparation of Nano ultrathin metal attachment layer and electronic selection the transmission nano metal magnesium layer of degree, energy turn
It changes efficiency to have been significantly improved, enhancing rate is 10% or so；When the metal species that Nano ultrathin metal attachment layer uses are different
When, the enhancing rate of PCE is different, and when Nano ultrathin metal attachment layer is adopted as metal Ag, the enhancing rate of PCE is better than
Al；The thickness of Nano ultrathin metal attachment layer or electronic selection transmission nano metal magnesium layer is for its PCE's in back contacts
Enhancing rate also has an impact, wherein when Nano ultrathin metal attachment layer is with a thickness of 0.5 nm, PCE enhancing rate is best, when electronics selects
Selecting property transmit nano metal magnesium layer with a thickness of 10 nm when, the enhancing rate of PCE is best.But work as Nano ultrathin metal attachment layer
(using Al0.3Mg5 as representative) when thickness is lower than 0.5 nm, the PCE of battery is even for comparative example 1, it is seen then that is not that nanometer is super
Thin metal attachment layer is thinner, and the PCE of battery is higher；But only when Nano ultrathin metal attachment layer and electronic selection transmission are received
The thickness of rice magnesium metal layer in the case where specific thicknesses, can be only achieved the effect for improving battery PCE.
In table 1, compared with blank comparative example, although open-circuit voltage, short circuit current and filling in different test groups
The factor has floating slightly, but in PCE aspect of performance, finally shows as 10% or so increase rate.
Wherein, the back contacts of Ag0.5Mg10 bimetallic nano layer and the electric current of the battery detecting of blank control group preparation are close
Degree is as shown in Figure 1.As can be known from Fig. 1, compared with blank control example, the items of the battery of Ag0.5Mg10 back contacts preparation have been plated
Performance parameter has promotion, and final PCE improves 12.80%.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention
The limitation of shield range can also be made on the basis of above description and thinking for those of ordinary skill in the art
Other various forms of variations or variation, there is no necessity and possibility to exhaust all the enbodiments.It is all of the invention
Made any modifications, equivalent replacements, and improvements etc., should be included in the protection of the claims in the present invention within spirit and principle
Within the scope of.
Claims (9)
1. a kind of bimetallic nano layer back contacts for throwing silicon solar cell for undoped heterogeneous N-shaped list, which is characterized in that described
Back contacts are that N-shaped list throws the Nano ultrathin metal attachment layer that the silicon back side is successively coated with and electronic selection transmits nano metal layer；
The Nano ultrathin metal attachment layer is aluminium, silver or gold, with a thickness of 0.5~1 nm；The electronic selection transmits nanogold
Category layer is magnesium, with a thickness of 5~20 nm.
2. the bimetallic nano layer back contacts of silicon solar cell are thrown for undoped heterogeneous N-shaped list according to claim 1,
It is characterized in that, the Nano ultrathin metal attachment layer is aluminium, with a thickness of 0.5 nm.
3. the bimetallic nano layer back contacts of silicon solar cell are thrown for undoped heterogeneous N-shaped list according to claim 1,
It is characterized in that, electronic selection transmission nano metal layer with a thickness of 10 nm.
4. any bimetallic nano layer back contacts for throwing silicon solar cell for undoped heterogeneous N-shaped list of claims 1 to 3
Preparation method, which comprises the steps of:
S1. the oxide layer that undoped heterogeneous N-shaped list throws silicon chip surface is removed, clean and surface non-oxidation layer N-shaped list is obtained and throws
Silicon wafer；
S2. the silicon back side being thrown in the undoped heterogeneous N-shaped list that step S1 is obtained, Nano ultrathin metal is plated using Vacuum sublimation
Adhesive layer；
S3. electronic selection transmission is plated using Vacuum sublimation on the Nano ultrathin metal attachment layer that step S2 is obtained
The bimetallic nano layer back contacts can be obtained in nano metal layer；
Wherein in step S2 Nano ultrathin metal attachment layer with a thickness of 0.5~1 nm；Electronic selection transmission is received in step S3
Rice metal layer with a thickness of 5~20 nm.
5. the bimetallic nano layer back contacts of silicon solar cell are thrown for undoped heterogeneous N-shaped list according to claim 4
Preparation method, which is characterized in that in step S2, the deposition rate of Nano ultrathin metal attachment layer is 0.01~0.1/s；Step
In S3, the deposition rate that electronic selection transmits nano metal layer is 0.03-3/s.
6. the bimetallic nano layer back contacts of silicon solar cell are thrown for undoped heterogeneous N-shaped list according to claim 4
Preparation method, which is characterized in that the detailed process of step S1 are as follows: it is molten that undoped heterogeneous N-shaped list throwing silicon wafer is soaked in hydrofluoric acid
The oxide layer of silicon chip surface is removed in liquid.
7. the bimetallic nano layer back contacts of silicon solar cell are thrown for undoped heterogeneous N-shaped list according to claim 6
Preparation method, which is characterized in that the concentration of the hydrofluoric acid is 5~10 M, and soaking time is 2~10 min.
8. any bimetallic nano layer back contacts for throwing silicon solar cell for undoped heterogeneous N-shaped list of claims 1 to 3
Preparing the application in solar cell.
9. a kind of undoped heterogeneous N-shaped list throws silicon solar cell, which is characterized in that receive comprising claims 1 to 3 is any described
Rice double-metal layer back contacts.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113224176A (en) * | 2020-01-21 | 2021-08-06 | 隆基绿能科技股份有限公司 | Intermediate series layer, laminated photovoltaic device and production method |
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| CN101436636A (en) * | 2008-12-16 | 2009-05-20 | 中国科学院电工研究所 | Transparent conductive cathode contact structure for n type silicon |
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Application publication date: 20190122 |