CN109252209A - A method of improving zone-melted silicon single crystal polycrystalline bar utilization rate - Google Patents
A method of improving zone-melted silicon single crystal polycrystalline bar utilization rate Download PDFInfo
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- CN109252209A CN109252209A CN201810839106.9A CN201810839106A CN109252209A CN 109252209 A CN109252209 A CN 109252209A CN 201810839106 A CN201810839106 A CN 201810839106A CN 109252209 A CN109252209 A CN 109252209A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The present invention provides a kind of methods for improving zone-melted silicon single crystal polycrystalline bar utilization rate, to fall the remaining polycrystalline bar after bud in A size zone-melted silicon single crystal growth course during monocrystalline is kept as raw material, under conditions of not changing thermal field inside zone melting furnace, according to the surplus of remaining polycrystalline bar, switch monocrystalline growing process parameter, continues to draw the other sizes zone-melted silicon single crystal that size is less than A size zone-melted silicon single crystal.The method of the present invention for improving zone-melted silicon single crystal polycrystalline bar utilization rate is not under conditions of changing thermal field structure inside zone melting furnace, it is raw material using the remaining polycrystalline bar after bud is fallen, according to the surplus of remaining polycrystalline bar, it is switched to the technological parameter for the other sizes zone-melted silicon single crystal that can be drawn, continue to draw other sizes zone-melted silicon single crystal, blanking is avoided to do over again, improve the rate of utilization of work hour, reduce the loss of polycrystalline bar, the utilization rate for improving polycrystalline bar improves the yield of silicon single crystal rod.
Description
Technical field
The invention belongs to zone-melted silicon single crystal growth technique fields, more particularly, to a kind of raising zone-melted silicon single crystal polycrystalline rod
Expect the method for utilization rate.
Background technique
Zone-melting process (FZ) production monocrystalline silicon is a kind of novel method for monocrystal growth for being different from vertical pulling method (CZ), it is utilized
Radio-frequency induction coil provides in high-purity polycrystal material heating and melting, the melting zone of generation by the surface tension and heating coil of molten silicon
Magnetic supporting power be in suspended state, be then drawn into monocrystalline by the process of crystal growth using seed crystal welding polycrystalline bar.
The silicon single crystal purity is high of zone-melting process growth, uniformity is good, humble defect, and excellent electric property is suitble to production high
Pressure, high current, powerful power electronic devices, possess the great market space.With advanced large scale integrated circuit and function
The continuous development of rate semiconductor devices, monocrystalline silicon gradually develop to major diameter, big weight, inexpensive direction.
The growth course of zone-melted silicon single crystal mainly include prepurging, shove charge, evacuation, preheating, material, seeding, shouldering, turn shoulder,
Isometrical, ending, cooling, blowing out.When zone melting furnace grows monocrystalline, often due to technique is unstable and the defect of thermal field condition,
Lead to the reduction of zone melting single-crystal crystal forming rate, not only cause the waste of polycrystalline bar, but also results in lower production efficiency.Vertical pulling method
It grows monocrystalline and uses polycrystalline block, by the multiple multiple throwing of raw material, can ensure the growth of more monocrystalline, realize polycrystal raw material
Comprehensive utilization.Monocrystalline growth with czochralski there is also at it is brilliant it is unstable fall bud situation, can be to avoid more using the method for melt back
The replacement of brilliant raw material, however the technique of zone melting furnace growth monocrystalline is then not all right, zone-melting process then needs to cool down to the monocrystalline for falling bud,
Take monocrystalline, again prepurging, shove charge, reload, evacuate, preheating, material, seeding, the processes such as shouldering.For example, using Qu Ronggong
Skill carries out 8 inches of large diameter zone melting silicon single crystal growths, and technique uses 150-175mm polycrystalline bar, if keeping process in monocrystalline
It is middle fall bud, because the surplus of remaining polycrystalline bar has been unable to satisfy 8 inches of monocrystalline from shoulder is expanded to keeping isodiametric growth
Materials demand needs to take monocrystalline by cooling in this way so blanking need to be carried out to raw material, prepurging, shove charge feeding, evacuation, in advance
The processes such as heat, material are drawn again, and not only working hour loss is more, but also carries out returning to wash and do over again after raw material blanking also bringing again
The increase of processing cost and the loss of raw material.Therefore, polycrystalline rod raw material availability how is improved, the loss of raw material is reduced, is improved
Production efficiency of equipment improves the rate of utilization of work hour, and increasing yield is zone-melted silicon single crystal growing technology field urgent problem.
Summary of the invention
In view of this, to solve the above problems, the present invention provides a kind of raising zone-melted silicon single crystal polycrystalline bars to utilize
The method of rate, when falling bud, avoidable blanking is done over again and the waste of remaining polycrystalline bar.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
A method of zone-melted silicon single crystal polycrystalline bar utilization rate being improved, in A size zone-melted silicon single crystal growth course
Remaining polycrystalline bar after falling bud during monocrystalline is kept is raw material, in the condition for not changing thermal field inside zone melting furnace
Under, according to the surplus of the remaining polycrystalline bar, switch monocrystalline growing process parameter, continues to draw size less than the A ruler
The other sizes zone-melted silicon single crystal of very little zone-melted silicon single crystal.
Further, the A size zone-melted silicon single crystal is 8 inches of zone-melted silicon single crystals；The other sizes zone-melted silicon single crystal
For 6 inches of zone-melted silicon single crystals or one of 5 inches of zone-melted silicon single crystals or 4 inches of zone-melted silicon single crystals.
Further, the diameter of the polycrystalline bar for drawing the A size zone-melted silicon single crystal is 150~175mm, weight
For 70~100kg, length is 1500~2100mm.
Further, when the length of the remaining polycrystalline bar is 1000~1500mm, switching draws 6 inches of zone melting and refining silicon lists
Brilliant technological parameter continues to draw 6 inches of zone-melted silicon single crystals.
Further, when the length of the remaining polycrystalline bar is 600~1000mm, switching draws 5 inches of zone melting and refining silicon lists
Brilliant technological parameter continues to draw 5 inches of zone-melted silicon single crystals.
Further, when the length of the remaining polycrystalline bar is less than 600mm, switching draws 4 inches of zone-melted silicon single crystals
Technological parameter continues to draw 4 inches of zone-melted silicon single crystals.
Further, thermal field structure is that heating coil is melted in the area of 280~320mm diameter inside the zone melting furnace.
Further, described method includes following steps:
(1) it when drawing A size zone-melted silicon single crystal, after falling bud during monocrystalline is kept, closes and is filled with into furnace
Argon gas, carrying out slow cooling to the monocrystalline drawn out becomes black to monocrystalline tail portion from red, the monocrystalline after taking out cooling；
(2) seed crystal is packed on seed crystal fixed chuck, closes fire door and vacuumizes；
(3) under conditions of not changing thermal field inside zone melting furnace, according to falling the remaining polycrystalline bar after bud in step (1)
Surplus is switched to the technological parameter for drawing the other sizes zone-melted silicon single crystal for being less than A size zone-melted silicon single crystal, continues to draw it
His size zone-melted silicon single crystal.
Further, a length of 50 when in the step (1) to the cooling of the monocrystalline progress slow cooling drawn out~
90min。
Further, technological parameter when drawing the other sizes zone-melted silicon single crystal is that conventional area's process of smelting draws 6
Technological parameter when inch zone-melted silicon single crystal or 5 inches of zone-melted silicon single crystals or 4 inches of zone-melted silicon single crystals.
Compared with the existing technology, it is of the present invention improve zone-melted silicon single crystal polycrystalline bar utilization rate method have with
Lower advantage:
The method of the present invention for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is hot inside zone melting furnace not changing
It is that raw material is switched to according to the surplus of remaining polycrystalline bar using the remaining polycrystalline bar after bud is fallen under conditions of field structure
The technological parameter for the other sizes zone-melted silicon single crystal that can be drawn continues to draw other sizes zone-melted silicon single crystal, avoids blanking
It does over again, improves the rate of utilization of work hour, reduce the loss of polycrystalline bar, improve the utilization rate of polycrystalline bar, improve monocrystalline
The yield of silicon rod.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the flow chart of the method for the present invention for improving zone-melted silicon single crystal polycrystalline bar utilization rate；
Fig. 2 is that 8 inches of zone-melted silicon single crystals described in the embodiment of the present invention 1 draw schematic diagram；
Fig. 3 is that 6 inches of zone-melted silicon single crystals described in the embodiment of the present invention 1 draw schematic diagram；
5 inches of zone-melted silicon single crystals described in Fig. 4 embodiment of the present invention 2 draw schematic diagram；
4 inches of zone-melted silicon single crystals described in Fig. 5 embodiment of the present invention 3 draw schematic diagram.
Specific embodiment
It should be noted that technical term used in following embodiment has to be led with belonging to the present invention in addition to being defined
The identical meanings that field technique personnel are commonly understood by, technique described in following embodiment are unless otherwise specified this field routine
Method.
The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
As shown in Figure 1, improving the zone-melted silicon single crystal process of the method for polycrystalline bar utilization rate, include the following steps:
(1) inside zone melting furnace thermal field be 280-320mm diameter area melt heating coil under conditions of, use diameter for
150~175mm, weight are 70~100kg, and the polycrystalline bar that length is 1500~2100mm is as raw material, according to 8 inches of drawing
The process of zone-melted silicon single crystal draws 8 inches of zone-melted silicon single crystals；
(2) if not falling bud during monocrystalline is kept, continue to be drawn to 8 inches of zone-melted silicon single crystals to ending；If
Fall bud during monocrystalline is kept, then suspends the growth of 8 inches of zone-melted silicon single crystals, the monocrystalline drawn out is dropped
It is taken out after temperature is cooling, replaces seed crystal；Computer calculates the weight of remaining polycrystalline bar according to the length of remaining polycrystalline bar；
(3) under the conditions of not changing thermal field, according to the weight of the remaining polycrystalline bar measured, control of the zone melting furnace in computer
It is switched to the technological parameter of the corresponding zone-melted silicon single crystal for drawing 6 inches or 5 inches or 4 inches under system, continues to draw 6 inches of areas
Silicon crystal or 5 inches of zone-melted silicon single crystals or 4 inches of zone-melted silicon single crystals.
It is conventional process of smelting side of area that the above, which draws the technological parameter being related in different size zone-melted silicon single crystals,
Parameter used in method.
Embodiment 1
Inside zone melting furnace thermal field be 280-320mm diameter area melt heating coil under conditions of, by diameter be 150~
175mm, weight are 70~100kg, and length is on crystal clamper in the polycrystalline bar loading area smelting furnace of 1500~2100mm；It will
Seed crystal be packed into seed crystal fixed chuck on, close fire door vacuumize, after be filled with argon gas, when furnace pressure reaches 4.7-5.7bar,
Polycrystalline bar is preheated；Material is carried out after preheating；After the fusing of polycrystalline bar, seed crystal and molten silicon welding are drawn
Brilliant thin neck growth；As shown in Fig. 2, isodiametric growth is carried out after expanding shoulder to 8 inches of monocrystalline, the rotation of polycrystalline bar during isodiametric growth
Rotary speed is that 0.1-1 turns/min, and the speed of growth of monocrystalline is 1.5-2.5mm/min, monocrystalline rotation speed 11.5-13.5 turns/
min；
If not falling bud during 8 inches of zone-melted silicon single crystals are kept, it is pulled to polycrystalline bar tail portion i.e. feeding not
Monocrystalline head and the tail are carried out when sufficient, are closed argon gas after head and the tail and are carried out monocrystalline slow cooling, until crystal tail portion has red to become black
Afterwards, then a length of 50-90min when cooling is carried out taking monocrystalline and is torn prepurging open；
If falling bud during 8 inches of zone-melted silicon single crystals are kept, the argon gas being filled with into furnace is closed, to
The monocrystalline that draws out, which carries out slow cooling, becomes black to monocrystalline tail portion from red, when cooling a length of 50-90min, take out cooling
After taking out monocrystalline, seed crystal is packed on seed crystal fixed chuck for monocrystalline afterwards, is closed fire door and is vacuumized；The residue that computer measures
When the length of polycrystalline bar is 1000~1500mm, switching draws the technological parameter of 6 inches of zone-melted silicon single crystals, and argon is filled with into furnace
Gas is gradually warmed up remaining polycrystalline bar when furnace pressure reaches 3.7-5.7bar, will after the fusing of polycrystalline bar
Seed crystal and molten silicon welding carry out the thin neck of seeding and grow, as shown in figure 3, monocrystalline expands shoulder to carrying out isodiametric growth, isometrical life after 6 inches
The rotation speed 0.1-1 of polycrystalline bar turns/min in growth process, and the speed of growth of monocrystalline is in 2.9-3.2mm/min, monocrystalline rotation
Speed 10.5-11.5 turns/min；Be pulled to polycrystalline bar tail portion i.e. feeding deficiency when carry out monocrystalline head and the tail, close argon after head and the tail
Gas carries out monocrystalline slow cooling, until after crystal tail portion has red to become black, when cooling a length of 50-90min, then remove drawing
6 inches of zone-melted silicon single crystals out.
Embodiment 2
On the basis of embodiment 1, the length for the remaining polycrystalline bar that computer measures unlike the first embodiment is
When 600-1000mm, switching draws the technological parameter of 5 inches of zone-melted silicon single crystals, argon gas is filled with into furnace, when furnace pressure reaches
When 3.7-5.7bar, remaining polycrystalline bar is gradually warmed up, after the fusing of polycrystalline bar, seed crystal and molten silicon welding are carried out
Seeding thin neck growth, as shown in figure 4, monocrystalline expands shoulder to carrying out isodiametric growth after 5 inches, polycrystalline bar during isodiametric growth
Rotation speed 0.1-1 turns/min, and the speed of growth of monocrystalline turns/min in 2.6-2.9mm/min, monocrystalline rotation speed 8.5-10.5；
Be pulled to polycrystalline bar tail portion i.e. feeding deficiency when carry out monocrystalline head and the tail, argon gas is closed after head and the tail and carries out monocrystalline slow cooling,
After thering is red to become black to crystal tail portion, when cooling a length of 50-90min, then remove the 5 inches of zone melting and refining silicon lists drawn out
It is brilliant.
Embodiment 3
On the basis of embodiment 1, the length for the remaining polycrystalline bar that computer measures unlike the first embodiment is less than
When 600mm, switching draws the technological parameter of 4 inches of zone-melted silicon single crystals, argon gas is filled with into furnace, when furnace pressure reaches 3.7-
When 5.7bar, remaining polycrystalline bar is gradually warmed up, after the fusing of polycrystalline bar, seed crystal and molten silicon welding are subjected to seeding
Thin neck growth, is switched to the technological parameter for drawing 4 inches of zone-melted silicon single crystals, as shown in figure 5, monocrystalline expands shoulder to carrying out after 4 inches
Isodiametric growth, the rotation speed 0.1-1 of polycrystalline bar turns/min during isodiametric growth, and the speed of growth of monocrystalline is in 2.8-
3.4mm/min, monocrystalline rotation speed 11.5-13.5 turn/min；Be pulled to polycrystalline bar tail portion i.e. feeding deficiency when to carry out monocrystalline first
Tail closes argon gas after head and the tail and carries out monocrystalline slow cooling, until after crystal tail portion has red to become black, when cooling is a length of
Then 50-90min removes the 4 inches of zone-melted silicon single crystals drawn out.
Embodiment 4
On the basis of embodiment 1, if during drawing 6 inches of zone-melted silicon single crystals, 6 inches of zone-melted silicon single crystals are kept
Fall bud in the process, then close the argon gas being filled with into furnace, to the monocrystalline that has drawn out carry out slow cooling to monocrystalline tail portion by
Red becomes black, when cooling a length of 50-90min, after taking out monocrystalline, seed crystal loading seed crystal is consolidated the monocrystalline after taking out cooling
On clamp head, closes fire door and vacuumize；Computer calculates the weight of remaining polycrystalline bar according to the length of remaining polycrystalline bar,
According to the weight of the remaining polycrystalline bar measured, zone melting furnace switches technological parameter under control of the computer, draws 5 English with matching
Very little or 4 inches of zone-melted silicon single crystal, the visible above-described embodiment 2 and 3 of specific process parameter, this will not be repeated here.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of method for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: raw with A size zone-melted silicon single crystal
Remaining polycrystalline bar after falling bud in growth process during monocrystalline is kept is raw material, is not changing thermal field inside zone melting furnace
Under conditions of, according to the surplus of the remaining polycrystalline bar, switch monocrystalline growing process parameter, continues to draw size less than institute
State the other sizes zone-melted silicon single crystal of A size zone-melted silicon single crystal.
2. the method according to claim 1 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
A size zone-melted silicon single crystal is 8 inches of zone-melted silicon single crystals；The other sizes zone-melted silicon single crystal is 6 inches of zone-melted silicon single crystals or 5 English
One of very little zone-melted silicon single crystal or 4 inches of zone-melted silicon single crystals.
3. the method according to claim 1 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: be used for
The diameter for drawing the polycrystalline bar of the A size zone-melted silicon single crystal is 150~175mm, and weight is 70~100kg, and length is
1500~2100mm.
4. the method according to claim 3 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
When the length of remaining polycrystalline bar is 1000~1500mm, switching draws the technological parameter of 6 inches of zone-melted silicon single crystals, continues to draw
6 inches of zone-melted silicon single crystals.
5. the method according to claim 3 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
When the length of remaining polycrystalline bar is 600~1000mm, switching draws the technological parameter of 5 inches of zone-melted silicon single crystals, continues drawing 5
Inch zone-melted silicon single crystal.
6. the method according to claim 3 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
When the length of remaining polycrystalline bar is less than 600mm, switching draws the technological parameter of 4 inches of zone-melted silicon single crystals, continues to draw 4 inches
Zone-melted silicon single crystal.
7. the method according to claim 3 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
Thermal field structure is that heating coil is melted in the area of 280~320mm diameter inside zone melting furnace.
8. the method according to claim 1 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
Method includes the following steps:
(1) when drawing A size zone-melted silicon single crystal, after falling bud during monocrystalline is kept, the argon gas being filled with into furnace is closed,
Carrying out slow cooling to the monocrystalline drawn out becomes black to monocrystalline tail portion from red, the monocrystalline after taking out cooling；
(2) seed crystal is packed on seed crystal fixed chuck, closes fire door and vacuumizes；
(3) under conditions of not changing thermal field inside zone melting furnace, according to the residue for falling the remaining polycrystalline bar after bud in step (1)
Amount is switched to the technological parameter for drawing the other sizes zone-melted silicon single crystal for being less than A size zone-melted silicon single crystal, continues to draw other rulers
Very little zone-melted silicon single crystal.
9. the method according to claim 8 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: described
A length of 50~90min when in step (1) to the cooling of the monocrystalline progress slow cooling drawn out.
10. the method according to claim 8 for improving zone-melted silicon single crystal polycrystalline bar utilization rate, it is characterised in that: draw
Technological parameter when making the other sizes zone-melted silicon single crystal is that conventional area's process of smelting draws 6 inches of zone-melted silicon single crystals or 5 English
Technological parameter when very little zone-melted silicon single crystal or 4 inches of zone-melted silicon single crystals.
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|---|---|---|---|---|
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| CN103451718A (en) * | 2013-09-05 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Zone melting furnace device capable of continuous production and process control method thereof |
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| WO2017103229A1 (en) * | 2015-12-16 | 2017-06-22 | Total Marketing Services | Manufacturing method of a silicon single crystal and silicon wafer production facility |
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| CN102304757A (en) * | 2011-10-11 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method |
| CN103451718A (en) * | 2013-09-05 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Zone melting furnace device capable of continuous production and process control method thereof |
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