CN109244168A - Heat dissipation type high photovoltaic backboard and its making apparatus - Google Patents
Heat dissipation type high photovoltaic backboard and its making apparatus Download PDFInfo
- Publication number
- CN109244168A CN109244168A CN201811138399.4A CN201811138399A CN109244168A CN 109244168 A CN109244168 A CN 109244168A CN 201811138399 A CN201811138399 A CN 201811138399A CN 109244168 A CN109244168 A CN 109244168A
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- backboard
- dissipation type
- type high
- modified
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims description 44
- 229920000098 polyolefin Polymers 0.000 claims description 11
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 9
- 239000012778 molding material Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 238000005096 rolling process Methods 0.000 claims description 7
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 239000004677 Nylon Substances 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical class [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 239000012792 core layer Substances 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract description 6
- 230000007062 hydrolysis Effects 0.000 abstract description 6
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 241000549556 Nanos Species 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003503 terephthalic acid derivatives Chemical class 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of heat dissipation type high photovoltaic backboard, including backboard sandwich layer, the inside white reflecting layer positioned at backboard sandwich layer side and the outside black heat dissipating layer positioned at the backboard sandwich layer other side, the inside white reflecting layer is made by white high reflectance modified material, and the outside black heat dissipating layer is made by the filling-modified material of black nano of heat dissipation type high.So there is excellent heat sinking function, excellent hydrolysis, light aging resisting property, water vapor rejection performance, and manufacture craft is simple, generating efficiency is high.The present invention also provides a kind of making apparatus of heat dissipation type high photovoltaic backboard.
Description
Technical field
The present invention relates to photovoltaic technology field, especially a kind of heat dissipation type high photovoltaic backboard and its making apparatus.
Background technique
The generated output of solar photovoltaic assembly is more sensitive to temperature, and temperature is every to rise 1 degree Celsius, and generated output declines
Subtract 0.4%, therefore the heat dissipation of backboard has a major impact the performance of photovoltaic module.
The backboard of existing photovoltaic module is all using PVF (polyvinyl fluoride thin film)-PET (mylar)-PVF three-layer thin-film
The notacoria of composition, abbreviation TPT, wherein outside (air side) protective layer PVF has good environment resistant erosiveness, middle layer
PET has good insulation performance, and inside PVF surface treated and EVA have good adhesive property.
But this solar energy backboard using TPT structure, PET material is intolerant to hydrolysis and light fugitive aging, thermal diffusivity
It is poor.Light reflectivity on the inside of backboard is 75~80%, and the heat dissipation performance of backboard air side is weak, and backboard thermal coefficient is less than
0.5W/m2C。
Summary of the invention
In view of this, the present invention provides it is a kind of with excellent heat sinking function, excellent hydrolysis, light aging resisting property,
Water vapor rejection performance, and heat dissipation type high photovoltaic backboard and backboard the sandwich layer production that manufacture craft is simple, generating efficiency is high
Equipment, to solve the above problems.
A kind of heat dissipation type high photovoltaic backboard, it is anti-including backboard sandwich layer, the inside white positioned at backboard sandwich layer side
It penetrates layer and the outside black heat dissipating layer positioned at the backboard sandwich layer other side, the inside white reflecting layer is modified by white high reflectance
Material is made, and the outside black heat dissipating layer is made by the filling-modified material of black nano of heat dissipation type high.
Further, the white high reflectance modified material is high reflection polyolefine modified material, the poly- fluorine second of high reflection
Alkene material or high reflection polyvinylidene fluoride material.
Further, the filling-modified material of the black nano is black nano filled nylon modified material, black nano
The filling-modified polyvinyl fluoride material of filling-modified polyolefine material, black nano or the filling-modified Kynoar material of black nano
Material.
Further, the backboard sandwich layer is made of polyolefin copolymer.
Further, the inside white reflecting layer with a thickness of 10-100 microns, the thickness of the outside black heat dissipating layer
Degree is 10-100 microns.
A kind of making apparatus of heat dissipation type high photovoltaic backboard, including extruder, pressure roll, chill roll, Ruo Ganchuan
Dynamic roller, rolling unit and molding material path, the extruder have top feed chamber, the middle part feed below the feed chamber of top
Chamber and the lower part feed chamber below the feed chamber of middle part, and be set to extruder one end and with top feed chamber, middle part
The molding die that feed chamber and lower part feed chamber are connected to, the molding material path is horizontally placed on the lower section of molding die, described
Pressure roll is oppositely arranged with chill roll, and between pressure roll and chill roll have gap, several live-rollers be set to chill roll with
Between rolling unit, there is cooling device inside the chill roll.
Further, it is provided with the filling-modified material of black nano in the top feed chamber, is supplied in the middle part feed chamber
There is polyolefin copolymer, the lower part feed chamber is provided with white high reflectance modified material.
Compared with prior art, heat dissipation type high photovoltaic backboard of the invention includes backboard sandwich layer, is located at backboard core
The inside white reflecting layer and outside black heat dissipating layer positioned at the backboard sandwich layer other side of layer side, the inside white reflecting layer
It is made by white high reflectance modified material, the outside black heat dissipating layer is filling-modified by the black nano of heat dissipation type high
Material is made.So there is excellent heat sinking function, excellent hydrolysis, light aging resisting property, water vapor rejection performance, and make
It is high to make simple process, generating efficiency.The present invention also provides a kind of making apparatus of heat dissipation type high photovoltaic backboard.
Detailed description of the invention
The embodiment of the present invention is described below in conjunction with attached drawing, in which:
Fig. 1 is the side sectional view of heat dissipation type high photovoltaic backboard provided by the invention.
Fig. 2 is the schematic diagram of the making apparatus of heat dissipation type high photovoltaic backboard provided by the invention.
Specific embodiment
Specific embodiments of the present invention are further elaborated below based on attached drawing.It should be understood that herein
The explanation of the embodiment of the present invention is not intended to limit the scope of protection of the present invention.
Referring to FIG. 1, it is the schematic diagram of heat dissipation type high photovoltaic backboard provided by the invention, it is provided by the invention
Heat dissipation type high photovoltaic backboard includes backboard sandwich layer 110, inside white reflecting layer 120 and outside black heat dissipating layer 130, interior
Side white reflecting layer 120 is using white high reflectance modified material, such as high reflection polyolefine modified material, high reflection polyvinyl fluoride
Material, high reflection polyvinylidene fluoride material etc.;Outside black heat dissipating layer 130 is fine using having with inside white reflecting layer 120
Compatibility, heat dissipation type high the filling-modified material of black nano, as black nano filled nylon modified material, black nano are filled out
Fill the filling-modified polyvinyl fluoride material of modified polyolefine material, black nano, the filling-modified polyvinylidene fluoride material of black nano
Or the filling-modified material of other black nanos.
Inside white reflecting layer 120 can go out infrared light reflection, reduce photovoltaic module temperature;Outside black heat dissipating layer
130 use high heat sink material, and the temperature conduction of photovoltaic module is gone out.
Heat dissipation type high photovoltaic backboard provided by the invention has excellent heat sinking function, and photovoltaic module temperature is effectively reduced
Degree, while excellent hydrolysis, light aging resisting property, water vapor rejection performance are had both, and manufacture craft is simple, it is environmental-friendly.Back
Thermal coefficient on the outside of plate is greater than 1.5W/m2C, 92% or more light reflectivity on the inside of backboard.
Photovoltaic module uses such novel backboard, and temperature can be with low 3~5 degrees Celsius compared with conventional backing plate, and photovoltaic module generates electricity
Power improves 3~5 watts or more.
Table 1 is the parameters of heat dissipation type high photovoltaic backboard provided by the invention and TPT backboard, KPK backboard
Test data contrast table.
1 test data contrast table of table
From table 1 it follows that the heat dissipation type high photovoltaic backboard of this programme is protected with superior extension at break
Stay generated energy under rate, bigger splitting power, identical power conditions higher.
Referring to FIG. 2, it sets for a kind of production for making heat dissipation type high photovoltaic backboard provided by the invention
Standby schematic diagram, including extruder 210, pressure roll 220, chill roll 230, several live-rollers 240, rolling unit 250 and molding
Material path 260.Extruder 210 has top feed chamber 213, the middle part feed chamber 214 below top feed chamber 213 and is located at
The lower part feed chamber 215 of the lower section of middle part feed chamber 214, and be set to extruder 210 one end and with top feed chamber 213, in
The molding die 212 that portion's feed chamber 214 and lower part feed chamber 215 are connected to, molding material path 260 are horizontally placed on molding die
212 lower section, pressure roll 220 are oppositely arranged with chill roll 230, and have gap between pressure roll 220 and chill roll 230, if
Dry live-roller 240 is set between chill roll 230 and rolling unit 250.There is cooling device inside chill roll 230.Pressure roll
220 thickness to press relatively for heat dissipation type high photovoltaic backboard to be arranged with chill roll 230.
It is provided with the filling-modified material of black nano in top feed chamber 213, is provided with polyolefin copolymer in middle part feed chamber 214
Object (PO), lower part feed chamber 215 are provided with white high reflectance modified material, and at molding die 212, black nano is filling-modified
Material, poly terephthalic acid class plastics and white high reflectance modified material are extruded to form the sheet with certain wide cut jointly
Melt, sheet-like melt is moved in the gap between pressure roll 220 and chill roll 230 along molding material path 260, by pressure roll
220 with chill roll 230 opposite pressure and chill roll 230 cooling effect, be cooled and shaped the height heat dissipation for straticulate structure
Type photovoltaic backboard.Heat dissipation type high photovoltaic backboard in the conduction to rolling unit 250 of several live-rollers 240 by carrying out
Winding.
Compared with prior art, heat dissipation type high photovoltaic backboard of the invention includes backboard sandwich layer, is located at backboard core
The inside white reflecting layer and outside black heat dissipating layer positioned at the backboard sandwich layer other side of layer side, the inside white reflecting layer
It is made by white high reflectance modified material, the outside black heat dissipating layer is filling-modified by the black nano of heat dissipation type high
Material is made.So there is excellent heat sinking function, excellent hydrolysis, light aging resisting property, water vapor rejection performance, and make
It is high to make simple process, generating efficiency.The present invention also provides a kind of making apparatus of heat dissipation type high photovoltaic backboard.
The foregoing is merely a prefered embodiment of the invention, is not used to limitation protection scope of the present invention, any in the present invention
Modification, equivalent replacement or improvement in spirit etc., all cover in scope of the presently claimed invention.
Claims (7)
1. a kind of heat dissipation type high photovoltaic backboard, it is characterised in that: the heat dissipation type high photovoltaic backboard includes back
Plate core layer, the inside white reflecting layer positioned at backboard sandwich layer side and the outside black heat dissipating layer positioned at the backboard sandwich layer other side,
The inside white reflecting layer is made by white high reflectance modified material, and the outside black heat dissipating layer is by heat dissipation type high
The filling-modified material of black nano be made.
2. heat dissipation type high photovoltaic backboard as described in claim 1, it is characterised in that: the white high reflectance is modified
Material is high reflection polyolefine modified material, high reflection polyvinyl fluoride material or high reflection polyvinylidene fluoride material.
3. heat dissipation type high photovoltaic backboard as described in claim 1, it is characterised in that: the black nano is filling-modified
Material is that black nano filled nylon modified material, the filling-modified polyolefine material of black nano, black nano are filling-modified poly-
Fluoride material or the filling-modified polyvinylidene fluoride material of black nano.
4. heat dissipation type high photovoltaic backboard as described in claim 1, it is characterised in that: the backboard sandwich layer is by polyolefin
Copolymer is made.
5. heat dissipation type high photovoltaic backboard as described in claim 1, it is characterised in that: the inside white reflecting layer
With a thickness of 10-100 microns, the outside black heat dissipating layer with a thickness of 10-100 microns.
6. a kind of making apparatus of heat dissipation type high photovoltaic backboard, it is characterised in that: including extruder, pressure roll, cooling
Roller, several live-rollers, rolling unit and molding material path, the extruder have top feed chamber, are located at below the feed chamber of top
Middle part feed chamber and the lower part feed chamber below the feed chamber of middle part, and be set to extruder one end and with top supply
The molding die that material chamber, middle part feed chamber and lower part feed chamber are connected to, the molding material path are horizontally placed on molding die
Lower section, the pressure roll are oppositely arranged with chill roll, and have gap between pressure roll and chill roll, and several live-rollers are set to
Between chill roll and rolling unit, there is cooling device inside the chill roll.
7. the making apparatus of heat dissipation type high photovoltaic backboard as claimed in claim 5, it is characterised in that: the top supplies
It is provided with the filling-modified material of black nano in material chamber, polyolefin copolymer, the lower part feed are provided in the middle part feed chamber
Chamber is provided with white high reflectance modified material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811138399.4A CN109244168B (en) | 2018-09-28 | 2018-09-28 | High heat dissipation type solar photovoltaic backboard and manufacturing equipment thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811138399.4A CN109244168B (en) | 2018-09-28 | 2018-09-28 | High heat dissipation type solar photovoltaic backboard and manufacturing equipment thereof |
Publications (2)
Publication Number | Publication Date |
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CN109244168A true CN109244168A (en) | 2019-01-18 |
CN109244168B CN109244168B (en) | 2024-04-19 |
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