CN109244012A - A kind of tooling and method for the cleaning of cmos image sensor circuit - Google Patents

A kind of tooling and method for the cleaning of cmos image sensor circuit Download PDF

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Publication number
CN109244012A
CN109244012A CN201811042993.3A CN201811042993A CN109244012A CN 109244012 A CN109244012 A CN 109244012A CN 201811042993 A CN201811042993 A CN 201811042993A CN 109244012 A CN109244012 A CN 109244012A
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CN
China
Prior art keywords
image sensor
cmos image
circuit
cleaning
sensor circuit
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Application number
CN201811042993.3A
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Chinese (zh)
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CN109244012B (en
Inventor
冯小成
李峰
李洪剑
荆林晓
贺晋春
井立鹏
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Priority to CN201811042993.3A priority Critical patent/CN109244012B/en
Publication of CN109244012A publication Critical patent/CN109244012A/en
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors

Abstract

The invention discloses a kind of toolings and method for the cleaning of cmos image sensor circuit, belong to cmos image sensor circuit package field.Compared to conventional method, the present invention can quickly and efficiently remove the fifth wheel of the contamination for being attached to chip, shell and glass cover plate surfaces, dust and other forms, it solves the problems, such as that cmos image sensor circuit is caused photosensitive position to be blocked and formed that reliability caused by bad point is low as internal there are fifth wheel, while will not influence the bond strength of bonding wire inside circuit.Fifth wheel inside cmos image sensor circuit can be effectively removed using method of the invention, the reliability after ensure that cmos image sensor circuit package effectively shortens the production cycle, and cleaning method is simple and practical, is easily achieved, strong operability.

Description

A kind of tooling and method for the cleaning of cmos image sensor circuit
Technical field
The present invention relates to a kind of toolings and method for the cleaning of cmos image sensor circuit, belong to cmos image sensing Device circuit ceramic packaging technology field.
Background technique
Compared with traditional CCD imaging technique, cmos image sensor, which has, is easy to the system integration, low in energy consumption, imaging speed Degree is fast, response range is wide, capability of resistance to radiation is strong, advantages, the prospect of cmos camera such as at low cost are boundless.
The chip surface of cmos image sensor circuit is equipped with lenticule, and surface irregularity is more if there is fifth wheel Excess easily enters pit, can make one or the failure of several pixels.So cmos image sensor circuit is to fifth wheel It is extremely sensitive, cleaning appropriate must be carried out before circuit sealing cap, as far as possible removal chip surface, shell inside and glass Contamination on cover board.Existing cleaning way is usually to clean by hand, and this mode easily causes chip surface to damage, and reduces CMOS The performance of image sensor circuit.
Space flight aerospace grade device will face working environment complicated and changeable and extremely harsh, cmos image sensor circuit It must assure that high reliability, therefore have high requirement to circuit inside cleanliness, it is necessary to which cleaning process is optimized.
Summary of the invention
Technology of the invention solves the problems, such as: in order to overcome the deficiencies of the prior art, providing a kind of for cmos image sensing The tooling and method of device circuit cleaning, realize the cleaning to cmos image sensor circuit, guarantee cleanliness inside circuit, and not Circuit inside chip and bonding wire are caused to damage, guarantee circuit performance.
The technical solution of the invention is as follows:
A kind of tooling for the cleaning of cmos image sensor circuit, including scribing material ring, UV film and bracket;During bracket is Four empty foot-supporting structures, scribing material ring are placed on bracket again, and UV film is attached on scribing material ring, and UV film upper surface is used for Fixed cmos image sensor circuit.
The UV film is film of the one side with glue, and substrate material is polyolefin, and glue line material is acrylic acid.
UV film is 4900~7600mn/25mm relative to the bonding force of cmos image sensor circuit ceramic shell.
UV film thickness is 150~300um, and tensile strength is 22~33MPa.
Using the cmos image sensor circuit cleaning method of the tooling, include the following steps:
(1) circuit is fixed: cmos image sensor circuit is fixed in tooling;
(2) circuit transmits: by the scribing material ring being fixed together, UV film and cmos image sensor circuit overall structure It removes, is placed on cleaning device workbench from bracket;
(3) circuit cleans: by overall structure vacuum suction described in step (2) on cleaning device workbench, utilizing Gas-vapor mix body cleans circuit;
(4) dry after cleaning.
The method being fixed on cmos image sensor circuit in the step (1) in tooling are as follows:
(7.1) circuit is placed on one side on UV film;
(7.2) using the side as rotation axis, circuit is flat on UV film completely in a rotating manner;
(7.3) it in UV film lower surface, is scraped from circuit on one side to the other end with scraper plate, it can by circuit and UV film contact surface naked eyes The bubble seen removes.
When overall structure is placed on cleaning device workbench in the step (2), cmos image sensor circuit surface Angle with the gas-vapor mix body spray head above cleaning device workbench is 80~83 °.
In the step (3), gas-vapor mix body includes deionized water and compressed air.
In the step (3), deionized water and compressed air pressure are 0.5~0.6Mpa, and the water resistance of deionized water is 15~18M Ω, the revolving speed of cleaning device workbench are 350~400r/min, and scavenging period is 2~2.5min.
In the step (4), in gas-vapor mix body deionized water pressure be 0Mpa, compressed air pressure be 0.6~ 0.8MPa, the revolving speed of cleaning device workbench are 400~450r/min, and drying time is 2.5~3min.
The advantages of the present invention over the prior art are that:
(1) in the present invention, by special nozzle high speed ejection after high pressure de-ionized water and compressed air mixing, mixture is arrived It is disintegrated rapidly when up to circuit surface to be cleaned and forms powerful shock wave and take away fifth wheel, compared to traditional-handwork scouring side Method, the cleanliness of circuit is higher after cleaning, solve cmos image sensor circuit due to inside there are fifth wheel cause it is photosensitive Position is blocked and forms the low problem of reliability caused by bad point.
(2) present invention by control cleaning process parameter, guarantee not will cause in the process of cleaning circuit inside chip and The damage of bonding wire will not reduce the bond strength of bonding wire, circuit performance has been effectively ensured.
(3) circuit can be completed cleaning method of the invention in five minutes and clean and can satisfy image sensor circuit Internal purity requirements effectively shorten the production cycle, and cleaning method is simple and practical, is easily achieved, strong operability.
Detailed description of the invention
Fig. 1 is tooling schematic diagram of the present invention;
Fig. 2 is overall structure diagram;
Fig. 3 is cmos image sensor circuit cleaning process figure.
Specific embodiment
Below in conjunction with drawings and examples, the present invention will be further described in detail.
As shown in Figure 1, the present invention devises a kind of tooling for the cleaning of cmos image sensor circuit, including scribing material Ring 1, UV film 2 and bracket 3;Bracket 3 is four hollow foot-supporting structures, and scribing material ring 1 is placed on bracket 3 again, and UV film 2 is attached to On scribing material ring 1.UV film 2 is film of the one side with glue, and substrate material is polyolefin, and glue line material is acrylic acid.2 thickness of UV film For 150~300um.UV film 2 is 4900~7600mn/ relative to the bonding force of cmos image sensor circuit ceramic shell 25mm.2 tensile strength of UV film is 22~33MPa.
As shown in figure 3, a kind of method for the cleaning of cmos image sensor circuit, specific steps are as follows:
(1) circuit is fixed: being 20~30 DEG C in temperature, in the environment of humidity 35%~45%, by cmos image sensor Circuit is fixed in tooling, method are as follows:
Circuit is placed on one side on UV film;Using the side as rotation axis, circuit is flat on UV completely in a rotating manner On film;In UV film lower surface, scraped from circuit on one side to the other end with scraper plate, by circuit and UV film contact surface visible bubble It removes.
(2) circuit transmits: by the scribing material ring being fixed together, UV film and cmos image sensor circuit overall structure It is removed from bracket, overall structure diagram is as shown in Figure 2.It is placed on cleaning device workbench, when placement, cmos image is passed The angle of gas-vapor mix body spray head above sensor circuit surface and cleaning device workbench is 80~83 °, to guarantee to impact Power can rapidly take away fifth wheel.
(3) circuit cleans: by overall structure vacuum suction on cleaning device workbench, using gas-vapor mix body to circuit It is cleaned, the rotating speed of table of cleaning process cleaning device is 350~400r/min, and scavenging period is 2~2.5min, aqueous vapor Mixture includes deionized water and compressed air, in gas-vapor mix body deionized water and compressed air pressure be 0.5~ 0.6MPa, the water resistance of deionized water are 15~18M Ω.Test proves that the above-mentioned pressure of deionized water and compressed air can be protected It is moderate to demonstrate,prove impact force, can fifth wheel be taken away and be will cause rapidly the damage of circuit inside chip and bonding wire.Deionization The water resistance of water is 15~18M Ω, can guarantee the soda acid impurity that undopes in deionized water, thus will not be to circuit in cleaning process Inside chip causes to corrode.
(3) dry after cleaning: the rotating speed of table of drying process cleaning device is 400~450r/min, and drying time is 2.5~3min, deionized water pressure is 0Mpa in gas-vapor mix body, and compressed air pressure is 0.6~0.8MPa.
Embodiment:
According to processing tool of the present invention.It is 23 DEG C in temperature, in the environment of humidity 40%, with good anti-electrostatic wrist ring, completely newly Fingerstall, finger pinch circuit ceramic edge, steadily pick up circuit, guard against finger slide-in circuit inside cavity and circuit is fallen, benefit It is on one side that circuit is integrally placed on the UV film supported with scribing material ring by rotation axis with rotating manner with circuit bottom.Fixed electricity Road is motionless, is scraped from circuit on one side to the other end in UV film lower surface with scraper plate, by circuit and the macroscopic gas of UV film contact surface Bubble removes.The scribing material ring being fixed together, UV film and cmos image sensor circuit overall structure are removed from bracket, It is placed on cleaning device workbench, water when placement, above cmos image sensor circuit surface and cleaning device workbench The angle of gas mixture spray head is 81 °.
Circuit is cleaned using gas-vapor mix body, principle is that mixture collapses rapidly when reaching circuit surface to be cleaned It solves and forms powerful shock wave and take away fifth wheel, set 360r/min for cleaning process cleaning device rotating speed of table, Scavenging period is set as 2min, and deionized water and compressed air pressure are disposed as 0.5MPa in gas-vapor mix body.Pass hull closure Main shaft, shower water open purge chamber's hatch door, by overall structure vacuum suction on cleaning device workbench, close hatch door, carry out Automatic cleaning.
After automatic washing, circuit is carried out to blow leaching drying.Drying process cleaning device rotating speed of table is arranged For 410r/min, drying time is set as 2.5min, and deionized water pressure is set as 0Mpa, compressed air pressure in gas-vapor mix body It is set as 0.7MPa by force.Start to blow leaching drying automatically
It is cleaned and dried after completing, after waiting the stopping movement completely of each moving components such as workbench, cleaning sprayer, closes Workbench vacuum removes overall structure from workbench.
Dispergation is carried out using UV machine, with good anti-electrostatic wrist ring, completely new fingerstall, finger pinches circuit ceramic edge, steadily takes Circuit is played, finger slide-in circuit inside cavity is guarded against and circuit is fallen, the back-off of cmos image sensor circuit is placed in clean In pallet.
The present invention can quickly and efficiently remove the contamination for being attached to chip, shell and glass cover plate surfaces, dust with And the fifth wheel of other forms, solve cmos image sensor circuit due to inside there are fifth wheel cause photosensitive position by It blocks and forms the low problem of reliability caused by bad point, while will not influence the bond strength of bonding wire inside circuit.It utilizes Method of the invention can effectively remove fifth wheel inside cmos image sensor circuit, ensure that cmos image sensor circuit Reliability after encapsulation effectively shortens the production cycle, and cleaning method is simple and practical, is easily achieved, strong operability.
The content being not described in detail in this specification is common sense well known to those skilled in the art.

Claims (10)

1. a kind of tooling for the cleaning of cmos image sensor circuit, it is characterised in that: including scribing material ring (1), UV film (2) With bracket (3);Bracket (3) is four hollow foot-supporting structures, and scribing material ring (1) is placed on bracket (3) again, and UV film (2) attaches On scribing material ring (1), UV film (2) upper surface is for fixing cmos image sensor circuit.
2. a kind of tooling for the cleaning of cmos image sensor circuit according to claim 1, it is characterised in that: described UV film (2) is film of the one side with glue, and substrate material is polyolefin, and glue line material is acrylic acid.
3. a kind of tooling for the cleaning of cmos image sensor circuit as described in claim 1, it is characterised in that: UV film It (2) is 4900~7600mn/25mm relative to the bonding force of cmos image sensor circuit ceramic shell.
4. a kind of tooling for the cleaning of cmos image sensor circuit as described in claim 1, it is characterised in that: UV film (2) with a thickness of 150~300um, tensile strength is 22~33MPa.
5. utilizing the cmos image sensor circuit cleaning method of tooling described in claim 1, it is characterised in that including walking as follows It is rapid:
(1) circuit is fixed: cmos image sensor circuit is fixed in tooling;
(2) circuit transmits: by the scribing material ring, UV film and the cmos image sensor circuit overall structure that are fixed together from branch It removes, is placed on cleaning device workbench on frame;
(3) circuit cleans: by overall structure vacuum suction described in step (2) on cleaning device workbench, utilizing aqueous vapor Mixture cleans circuit;
(4) dry after cleaning.
6. cleaning method according to claim 5, it is characterised in that: by cmos image sensor electricity in the step (1) Road is fixed on the method in tooling are as follows:
(7.1) circuit is placed on one side on UV film;
(7.2) using the side as rotation axis, circuit is flat on UV film completely in a rotating manner;
(7.3) it in UV film lower surface, is scraped from circuit on one side to the other end with scraper plate, circuit and UV film contact surface is macroscopic Bubble removes.
7. cleaning method according to claim 5, it is characterised in that: overall structure is placed on cleaning in the step (2) When on device workbench, the folder of the gas-vapor mix body spray head above cmos image sensor circuit surface and cleaning device workbench Angle is 80~83 °.
8. cleaning method according to claim 5, it is characterised in that: in the step (3), gas-vapor mix body include go from Sub- water and compressed air.
9. cleaning method according to claim 8, it is characterised in that: in the step (3), deionized water and compressed air Pressure is 0.5~0.6Mpa, and the water resistance of deionized water is 15~18M Ω, and the revolving speed of cleaning device workbench is 350~ 400r/min, scavenging period are 2~2.5min.
10. cleaning method according to claim 8, it is characterised in that: in the step (4), gone in gas-vapor mix body from Sub- hydraulic pressure is 0Mpa by force, and compressed air pressure is 0.6~0.8MPa, and the revolving speed of cleaning device workbench is 400~450r/min, Drying time is 2.5~3min.
CN201811042993.3A 2018-09-06 2018-09-06 Tool and method for cleaning CMOS image sensor circuit Active CN109244012B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811042993.3A CN109244012B (en) 2018-09-06 2018-09-06 Tool and method for cleaning CMOS image sensor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811042993.3A CN109244012B (en) 2018-09-06 2018-09-06 Tool and method for cleaning CMOS image sensor circuit

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CN109244012A true CN109244012A (en) 2019-01-18
CN109244012B CN109244012B (en) 2021-11-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081594A (en) * 2019-09-25 2020-04-28 北京时代民芯科技有限公司 Cleaning tool and method for JLCC image sensor circuit before packaging

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CN2746518Y (en) * 2004-06-22 2005-12-14 胜开科技股份有限公司 Cleaning device for packing image sensor
CN101288873A (en) * 2007-04-16 2008-10-22 比亚迪股份有限公司 Air blasting method for removing dust from the sensitive chip and its device
CN101834149A (en) * 2010-04-20 2010-09-15 天津三星电机有限公司 Method for controlling pollution during packaging CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor used for cell phone camera
CN103489814A (en) * 2013-09-24 2014-01-01 深圳市凯尔迪光电科技有限公司 Full-automation mega sound wave semiconductor wafer cleaning device
CN105642616A (en) * 2014-11-11 2016-06-08 宁波舜宇光电信息有限公司 Dust removal jig and manufacturing method thereof
US20170036647A1 (en) * 2014-04-16 2017-02-09 Dlhbowles, Inc. Integrated Multi Image Sensor and Lens Washing Nozzle Assembly and Method for Simultaneously Cleaning a Plurality of Image Sensors
CN106629582A (en) * 2017-01-19 2017-05-10 烟台睿创微纳技术股份有限公司 MEMS (Micro-Electro-Mechanical System) cutting and cleaning as well as releasing method of wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2746518Y (en) * 2004-06-22 2005-12-14 胜开科技股份有限公司 Cleaning device for packing image sensor
CN101288873A (en) * 2007-04-16 2008-10-22 比亚迪股份有限公司 Air blasting method for removing dust from the sensitive chip and its device
CN101834149A (en) * 2010-04-20 2010-09-15 天津三星电机有限公司 Method for controlling pollution during packaging CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor used for cell phone camera
CN103489814A (en) * 2013-09-24 2014-01-01 深圳市凯尔迪光电科技有限公司 Full-automation mega sound wave semiconductor wafer cleaning device
US20170036647A1 (en) * 2014-04-16 2017-02-09 Dlhbowles, Inc. Integrated Multi Image Sensor and Lens Washing Nozzle Assembly and Method for Simultaneously Cleaning a Plurality of Image Sensors
CN105642616A (en) * 2014-11-11 2016-06-08 宁波舜宇光电信息有限公司 Dust removal jig and manufacturing method thereof
CN106629582A (en) * 2017-01-19 2017-05-10 烟台睿创微纳技术股份有限公司 MEMS (Micro-Electro-Mechanical System) cutting and cleaning as well as releasing method of wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081594A (en) * 2019-09-25 2020-04-28 北京时代民芯科技有限公司 Cleaning tool and method for JLCC image sensor circuit before packaging

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