CN109240940A - A kind of large capacity NAND Flash data storage method - Google Patents
A kind of large capacity NAND Flash data storage method Download PDFInfo
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- CN109240940A CN109240940A CN201811020161.1A CN201811020161A CN109240940A CN 109240940 A CN109240940 A CN 109240940A CN 201811020161 A CN201811020161 A CN 201811020161A CN 109240940 A CN109240940 A CN 109240940A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000013500 data storage Methods 0.000 title claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 9
- 230000003993 interaction Effects 0.000 claims abstract description 3
- 238000012986 modification Methods 0.000 claims description 12
- 230000004048 modification Effects 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
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- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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Abstract
The invention discloses a kind of large capacity NAND Flash data storage methods, it include: when the data capacity in RAM is less than the size of data in module unit to be processed, any future use block unit is chosen as data buffer storage unit and the RAM and carries out data interaction, so that the data in the module unit to be processed, which are written to after executing data processing in the RAM, to lose.When the present invention solves the data storage capacity in RAM less than module unit size of data, the problem of causing data not store all；By using using future use block unit as " virtual RAM " method of data buffer storage unit, it can not only guarantee data all storage and the stability for not losing, and reducing the quantity of RAM chip, reducing costs and improve system.
Description
Technical field
The present invention relates to technical field of data storage, especially a kind of large capacity NAND Flash data storage method.
Background technique
With the development of science and technology, NAND flash storage using more and more extensive, be widely used in electricity
It is stored in subsystem as data.Since the write operation of flash device can only carry out in unit that is empty or having wiped, and
It is that operation is wiped and reprogramd to unit that NAND Flash, which is with block (Block), so in most cases, being write
It must be first carried out before entering operation and wipe corresponding piece.It is shown in Figure 1, in currently used modification module unit (Block)
The operating procedure of data includes: 1, corresponds to total data in module unit and read out and keep in some of NAND Flash
In RAM；2, it carries out wiping corresponding piece again, all bytes of data in block are Oxff at this time；3, corresponding address is modified in RAM
Data；4, the data updated in RAM are re-write in the module unit of NAND Flash.
Currently, the method for the common data storage technology for solving the problems, such as this is as shown in Fig. 2, be specially more using extending
A RAM chip capacity, until some of NAND Flash corresponds to the data read out in module unit and can all keep in RAM
In.Although the method for this data storage can achieve the purpose that data complete exchange is not lost, due to extending multiple RAM chips
Expensive, cost is too high, and circuit-line is complicated, and the probability of hardware chip pin rosin joint increases, and maintenance difficulty is big, therefore property
Valence is than not high, uneconomical practical.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, propose a kind of large capacity NAND Flash data storage side
Method, solves during exchanging Large Volume Data, and the not enough problem of RAM data memory capacity does not need to extend multiple
RAM chip significantly reduces cost and improves the stability of system.
The present invention adopts the following technical scheme:
A kind of large capacity NAND Flash data storage method, comprising: when the data capacity in RAM is less than to be processed piece of list
When size of data in member, any future use block unit is chosen as data buffer storage unit and the RAM and carries out data interaction, with
Being written to the data in the module unit to be processed in the RAM will not lose after execution data processing.
Preferably, the data processing includes data modification.
Preferably, the storage method specifically includes:
Wipe all data in the future use block unit；
The data portion in the module unit to be processed is written to the RAM according to RAM amount of capacity, then will be described
Data are written to the future use block unit in RAM；Aforesaid operations are repeated until the data in the module unit to be processed are whole
It is written to the future use block unit；
Wipe all data in module unit to be processed；
The data portion in the future use block unit is written to the RAM according to RAM amount of capacity, in the RAM
Middle execution data processing, then data are written to the module unit to be processed by treated；Aforesaid operations are repeated until all numbers
The module unit to be processed is written to after having handled according to whole.
Preferably, data processing is executed in the RAM, then data are written to the to be processed piece of list by treated
Member specifically includes:
Data modification is judged whether there is, if not provided, the future use block unit to be directly written to the data of the RAM
It is written to the module unit to be processed；If so, modified data are written to institute after executing data modification in the RAM
State module unit to be processed.
Compared with prior art, beneficial effects of the present invention are as follows:
A kind of large capacity NAND Flash data storage method of the present invention, the data storage capacity solved in RAM are less than
When module unit size of data, the problem of causing data not store all；Delay by using using future use block unit as data
" virtual RAM " method of memory cell can not only guarantee that data are all stored and do not lost, and reduce the number of RAM chip
Measure, reduce costs and improve the stability of system.
The above description is only an overview of the technical scheme of the present invention, in order to more clearly understand technology hand of the invention
Section, so as to be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention
It can be more clearly understood, be exemplified below a specific embodiment of the invention.
According to the following detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings, those skilled in the art will be brighter
Above-mentioned and other purposes of the invention, advantages and features.
Detailed description of the invention
Fig. 1 is the modified block cell data operational flowchart of the prior art；
Fig. 2 is the date storage method of the prior art；
Fig. 3 is the data storage principle figure of the large capacity NAND Flash data storage method of the embodiment of the present invention；
Fig. 4 is the data Stored Procedure figure of the large capacity NAND Flash data storage method of the embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
A kind of large capacity NAND Flash data storage method of the present invention is specially to be carried out greatly using the method for " virtual RAM "
The storage of capacity NAND Flash data.It is shown in Figure 3, by slow as data by module unit 2048 in NAND Flash
It deposits, is equivalent to one " virtual terminal ", the data in module unit 1 (module unit to be processed) are successively read in RAM 1 again
It is written in module unit 2048 (future use block unit), the data in module unit 2048 are sent to again in RAM 1, while in RAM
Data modification operation can be executed in 1, finally by the data transmission updated in RAM 1 to module unit 1, due to the data in RAM
Capacity is relatively small, can be sequentially transmitted data, until data are all stored into module unit 1.It solves due to the number in RAM
The problem of being far smaller than module unit 1 according to memory capacity, data is caused not store all.And by using this " virtual
The method of RAM " not only greatly reduces the quantity of chip, reduces costs, and also improves the reliability of system, line construction
Simply, low in energy consumption.
Specifically, by taking MT29F8G08ABABA is the NAND Flash chip of model as an example.Its internal structure is as follows:
1、Page size x8:4320bytes(4096+224bytes)
2、Block size:128pages(512K+28K bytes)
3、Plane size:2planes x 1024blocks per plane
4、Device size:8Gb:2048blocks
It can be seen from the above NAND Flash shares 2048 module units, the data storage capacity of each module unit is
512KB, it is assumed that it is 512KB that operation data, which occupies capacity, in module unit 1, now uses amount of capacity for the RAM of 64KB.NAND at this time
2047 vacant data of block unit of Yuing in Flash are taken the 2048th module unit to make data and are delayed using the method for " virtual RAM "
It deposits.Shown in Figure 4, specific step is as follows for data storage:
Step 1: the data in module unit 2048 all being wiped, all bytes of data in block are Oxff at this time；
Step 2: the data in module unit 1 being read into 64KB and are kept in RAM 1；
Step 3: 64KB data in RAM 1 are written in corresponding module unit 2048；
Step 4: repeating 8 steps 2 to step 3, until the data in module unit 1 all read module unit 2048
In；
Step 5: the data in module unit 1 all being wiped, all bytes of data in block are Oxff at this time；
Step 6: the data in module unit 2048 being read into 64KB and are kept in RAM 1；
Step 7: judging whether module unit 1 has data modification, if there is modification, directly execute data modification in RAM 1
Step 8 is executed after operation；If no data is modified, step 8 is directly executed；
Step 8: the data of 64KB in RAM 1 are all written in module unit 1；
Step 9: repeating 8 steps 6 to step 8, until the data of update have all been sequentially transmitted module unit 1
In, data storage at this time finishes.
From the present embodiment as can be seen that storage for Large Volume Data, by by the module unit in NAND Flash
2048 make temporary storage, and data are sequentially delivered in RAM to and are executed data run modification, then write the data in RAM again
Enter the module unit 1 in NAND Flash, reached data can large capacity transmission while, and the purpose that will not be lost.
A kind of large capacity NAND Flash data storage method provided by the invention, to the process in exchange Large Volume Data
In, the not enough situation of RAM data memory capacity is described in detail, when executing big data, although the capacity of RAM is remote
Not nearly enough use, but by way of this " virtual RAM ", achieve the purpose that data are all stored and do not lost.Not only it is not required to
Multiple RAM chips are extended, also improve the stability of system, and be particularly suitable for mass data storage.
The above is only a specific embodiment of the present invention, but the design concept of the present invention is not limited to this, all to utilize this
Design makes a non-material change to the present invention, and should all belong to behavior that violates the scope of protection of the present invention.
Claims (4)
1. a kind of large capacity NAND Flash data storage method characterized by comprising when the data capacity in RAM is less than
When size of data in module unit to be processed, chooses any future use block unit and carried out as data buffer storage unit and the RAM
Data interaction, so that the data in the module unit to be processed, which are written to after executing data processing in the RAM, to lose.
2. large capacity NAND Flash data storage method according to claim 1, which is characterized in that the data processing
Including data modification.
3. large capacity NAND Flash data storage method according to claim 1, which is characterized in that the storage method
It specifically includes:
Wipe all data in the future use block unit；
The data portion in the module unit to be processed is written to the RAM according to RAM amount of capacity, then will be in the RAM
Data are written to the future use block unit；Aforesaid operations are repeated until the data in the module unit to be processed are all written to
The future use block unit；
Wipe all data in module unit to be processed；
The data portion in the future use block unit is written to the RAM according to RAM amount of capacity, is held in the RAM
Row data processing, then data are written to the module unit to be processed by treated；Aforesaid operations are repeated until all data are complete
Portion is written to the module unit to be processed after having handled.
4. large capacity NAND Flash data storage method according to claim 3, which is characterized in that in the RAM
Data processing is executed, then data are written to the module unit to be processed by treated, specifically include:
Data modification is judged whether there is, if not provided, directly the data that the future use block unit is written to the RAM are written
To the module unit to be processed；If so, after executing data modification in the RAM by modified data be written to it is described to
Handle module unit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811020161.1A CN109240940A (en) | 2018-09-03 | 2018-09-03 | A kind of large capacity NAND Flash data storage method |
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| CN201811020161.1A CN109240940A (en) | 2018-09-03 | 2018-09-03 | A kind of large capacity NAND Flash data storage method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023164962A1 (en) * | 2022-03-02 | 2023-09-07 | 深圳市江波龙电子股份有限公司 | Program running method for storage apparatus, electronic device, and readable storage apparatus |
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| CN101216789A (en) * | 2008-01-08 | 2008-07-09 | 福建星网锐捷网络有限公司 | Data update method, device and system |
| CN103377152A (en) * | 2012-04-26 | 2013-10-30 | 深圳市朗科科技股份有限公司 | Write operation control method and write operation device for solid state disk |
| CN103914393A (en) * | 2014-04-11 | 2014-07-09 | 四川华拓光通信股份有限公司 | MCU-based (microprogrammed control unit-based) non-loss FLASH storage update method |
| CN106371764A (en) * | 2016-08-23 | 2017-02-01 | 浪潮(北京)电子信息产业有限公司 | Virtual block device-based data processing method and apparatus |
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2018
- 2018-09-03 CN CN201811020161.1A patent/CN109240940A/en active Pending
Patent Citations (5)
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| JPH11184831A (en) * | 1997-12-25 | 1999-07-09 | Kobe Steel Ltd | Plural processors system |
| CN101216789A (en) * | 2008-01-08 | 2008-07-09 | 福建星网锐捷网络有限公司 | Data update method, device and system |
| CN103377152A (en) * | 2012-04-26 | 2013-10-30 | 深圳市朗科科技股份有限公司 | Write operation control method and write operation device for solid state disk |
| CN103914393A (en) * | 2014-04-11 | 2014-07-09 | 四川华拓光通信股份有限公司 | MCU-based (microprogrammed control unit-based) non-loss FLASH storage update method |
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| WO2023164962A1 (en) * | 2022-03-02 | 2023-09-07 | 深圳市江波龙电子股份有限公司 | Program running method for storage apparatus, electronic device, and readable storage apparatus |
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