CN109239764B - High-yield modular production and assembly method for large flat CT detector - Google Patents
High-yield modular production and assembly method for large flat CT detector Download PDFInfo
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Abstract
The invention discloses a high-yield modular production assembly method of a large flat-panel CT detector, which comprises the following steps: randomly selecting n unit crystals obtained from the unit crystal screening process; if the selected unit crystal has radiation damage or afterglow lpp, reselecting any other package until no RD and AG lpps exist; screening KV ratio original data by using n crystals to combine into a module original data matrix; calculating KV pmn2pmn by using a packet median value of each packet, and determining passing or failing KV pmn2pmn specification of each packet; calculating KV ch2 mean value by using the screened original data of each unit crystal, and determining PASS or FAIL KV ch2 mean value specification of each packet; outputting information of n unit crystals, scan number and crystal number in a sequence of modules, the method can improve conversion rate of wide-plane CT detector modules by pre-calculating and predicting module target performance after scintillator pack screening process.
Description
Technical Field
The invention belongs to the field of CT imaging, and particularly relates to a wide flat CT detector technology.
Background
The wide flat building CT detector has unique advantages for CT imaging. However, due to the high performance consistency requirements of scintillator materials, there are several obstacles to the detector manufacturing process. From the IPU construction phase, Atlas-8sl module construction has a low C1 (highest performance module level available for ISO channel imaging) conversion rate. As shown in fig. 1, the current prediction accuracy of target module performance is only around 40% based on manufacturing statistics. For several reasons, 58.53% of the modules built (built as C1 target modules) have degraded. From the performance tracking, we know that 80% degradation is caused by the 140KV pmn2pmn specification (difference between adjacent packages). There are no other wrapper evaluations except for the wrapper screening process on the pre-tester during the current module build. Therefore, the package performance is likely to be degraded due to the non-linear difference between the package-to-module processes.
Disclosure of Invention
The present invention is directed to solving the above problems of the prior art. A module construction method of a wide flat-panel CT detector with high yield based on module performance prediction for improving the conversion rate of a C1 target module is provided. The technical scheme of the invention is as follows:
a high-yield modular production and assembly method for a large flat CT detector comprises the following steps:
1) after a screening process of the detector unit crystals is carried out on the crystal testing platform, obtaining initial numerical value testing data of the unit crystals, and randomly selecting n unit crystals obtained in the screening process of the unit crystals;
2) if the selected unit crystal has low-performance pixel channel LPP caused by radiation damage or afterglow performance, reselecting any other crystal module until no RD radiation damage and AG afterglow pps exist;
3) screening original data of KV high-low energy response uniformity indexes by using n crystals, and combining the original data into an original data matrix of a CT detector module by adopting a data combination tool;
4) after the original data matrix of the detector modules is obtained in the step 3, KV pmn2pmn is obtained by calculating the KV value of each crystal module, namely the difference of the KV values of the adjacent crystal modules, each detector module is determined to pass or not pass KV pmn2pmn index screening, if any unit crystal module does not pass pmn2pmn index, the step 1) is returned, unit crystals are selected again, and if the current crystal module configuration passes all set key indexes, the next step is continuously executed;
5) calculating the KV ch2 mean value by using the screened original data of each unit crystal, determining the PASS or FAIL KV ch2 mean value specification of each packet, returning to the step 1 and reselecting the unit crystal if any unit crystal does not PASS the ch2 mean value specification, and continuing to execute the next step if the current unit crystal configuration does not FAIL;
6) outputting the information of n unit crystals in the sequence of one module, and scanning the serial number and the crystal serial number;
in the step 4), the KV pmn2pmn is calculated by using the KV average value of the crystal in each detector module, and a specific calculation formula of one detector module composed of 4 crystal modules is as follows:
KV pmn2pmn1＝average(KV Pack1 )-average(KV Pack2 )
KV pmn2pmn2＝average(KV_Pack2)-average(KV_Pack3)
KV pmn2pmn3＝average(KV_Pack3)-average(KV_Pack4)
KV pmn2pmn4＝average(KV_Pack4)-average(KV_Pack1：KV_Pack3)
wherein, KV pmn2pmn1 is pmn2pmn value of KV index of No. 1 crystal module obtained by calculation, KV pmn2pmn2 is pmn2pmn value of KV index of No. 2 crystal module obtained by calculation, and so on, KV pmn2pmn4 is pmn2pmn value of KV index of No. 4 crystal module obtained by calculation, average (KV _ Pack1) is average value of KV index data of No. 1 crystal module obtained by experimental test, that is, all pixel channels; by analogy, average (KV _ Pack4) is the average value of KV index data of the No. 4 crystal module obtained by experimental test, that is, all pixel channels; average (KV _ Pack2) is the average value of KV index data of the No. 2 crystal module obtained by experimental test, namely all pixel channels; the average (KV _ Pack 1: KV _ Pack3) is the average value of KV index data of the No. 1 crystal module, the No. 2 crystal module and the No. 3 crystal module.
Further, n is 4.
Further, the step 5) of calculating the KV ch2 mean value by using the screened raw data of each unit crystal specifically includes:
KV ch2(i,j,N)＝KV_Pack_N(i,j,N)-KV_Pack_N(i+1,j,N)
the KV ch2 is a ch2 value of the KV index of the crystal module obtained by calculation, that is, a difference value between channels, KV _ Pack _ N (i, j, N) is KV index data of each pixel channel of the crystal module obtained by experimental tests, i is the number of pixel channels, j is the corresponding layer number, and N is a module number.
The invention has the following advantages and beneficial effects:
the method for assembling the CT detector module can obviously improve the raw material conversion rate of the highest-grade performance module of the wide flat-panel CT detector. The conversion rate of the highest performance level C1 module can be raised from 40% to 60%, which results in significant production savings.
The modular detector assembly process may also save time based on this modular performance prediction method, as the method may provide an accurate location where crystals should be placed in the detector for reference. An operator can place a crystal module directly for each module without having to spend time placing crystal material according to the CT detector production index guidelines.
Drawings
FIG. 1 is a schematic view of a prior art hierarchical flow of CT detector module assembly;
FIG. 2 is a schematic diagram of a high-yield module construction method of a wide flat panel CT detector based on module performance prediction.
Detailed Description
The technical solutions in the embodiments of the present invention will be described in detail and clearly with reference to the accompanying drawings. The described embodiments are only some of the embodiments of the present invention.
The technical scheme for solving the technical problems is as follows:
as shown in fig. 2, after the screening process of scintillator unit crystals is performed on the crystal test platform, we can obtain preliminary numerical test data of unit crystals, including KV, radiation damage and afterglow specifications. We can accomplish module performance prediction according to the following flow:
1. randomly selecting 4 unit crystals in a database obtained from a unit crystal screening process
2. If the selected unit crystal has radiation damage or afterglow lpp, reselecting any other package until no RD or AG lpps
3. Screening KV ratio original data by using 4 crystals, and combining the original data into a module original data matrix
4. KV pmn2pmn is calculated by using the packet median for each packet. The pass or fail KV pmn2pmn specification per packet is determined. If any unit crystal fails pmn2pmn specification, return to step 1 and reselect a unit crystal. If the current configuration does not fail, please continue to execute the next step
5. The KV ch2 mean was calculated by using the screened raw data for each unit crystal. The PASS or FAIL KV ch2 mean specification per packet is determined. If any unit crystal does not pass the ch2 mean specification, return to step 1 and reselect a unit crystal. If the current cell crystal configuration does not fail, please continue to execute the next step
6. The information of 4 unit crystals, scan number and crystal number are output in the sequence of one module.
The module construction method can obviously improve the Target-C1 module conversion rate of the wide flat-panel CT detector. The conversion rate of the C1 target module can be increased from 40% to 60%, which results in a significant savings of one year in ICV.
Based on this prediction method, module manufacturing may also save time, as the method may provide an accurate package location for reference. The operator can place the wrap directly for each module without having to spend time placing the wrap in accordance with the TST guidelines.
Patent protection point
1. The module construction method of the wide flat CT detector has higher performance consistency requirements on scintillator materials.
2. Module-level performance of key specifications of CT detectors is predicted by using pretest raw data of a set of scintillator materials. But the number of scintillators is not limited to 4 scintillators.
3. The method may also be used to predict detector level performance of an entire CT detector.
The above examples are to be construed as merely illustrative and not limitative of the remainder of the disclosure in any way whatsoever. After reading the description of the invention, the skilled person can make various changes or modifications to the invention, and these equivalent changes and modifications also fall into the scope of the invention defined by the claims.
Claims (3)
1. A high-yield modular production and assembly method for a large flat CT detector is characterized by comprising the following steps:
1) after a screening process of the detector unit crystals is carried out on the crystal testing platform, obtaining initial numerical value testing data of the unit crystals, and randomly selecting n unit crystals obtained in the screening process of the unit crystals;
2) if the selected unit crystal has low-performance pixel channel LPP caused by radiation damage or afterglow performance, reselecting any other crystal module until no RD radiation damage and AG afterglow pps exist;
3) screening original data of KV high-low energy response uniformity indexes by using n crystals, and combining the original data into an original data matrix of a CT detector module by adopting a data combination tool;
4) after obtaining the original data matrix of the detector modules in the step 3, calculating and obtaining KV pmn2pmn by using the KV value of each crystal module, namely the difference of KV values of adjacent crystal modules, determining that each detector module passes or fails to pass KV pmn2pmn index screening, returning to the step 1) and reselecting unit crystals if any unit crystal module does not pass pmn2pmn index, and continuing to execute the next step if the current crystal module configuration passes all set key indexes;
5) calculating the KV ch2 mean value by using the screened original data of each unit crystal, determining the PASS or FAIL KV ch2 mean value specification of each packet, returning to the step 1 and reselecting the unit crystal if any unit crystal does not PASS the ch2 mean value specification, and continuing to execute the next step if the current unit crystal configuration does not FAIL;
6) outputting the information of n unit crystals in the sequence of one module, and scanning the number and the crystal number;
step 4) calculating KV pmn2pmn by using the crystal KV average value in each detector module, wherein a specific calculation formula of one detector module consisting of 4 crystal modules is as follows:
KV pmn2pmn1＝average(KV Pack1 )-average(KV Pack2 )
KV pmn2pmn2＝average(KV_Pack2)-average(KV_Pack3)
KV pmn2pmn3＝average(KV_Pack3)-average(KV_Pack4)
KV pmn2pmn4＝average(KV_Pack4)-average(KV_Pack1：KV_Pack3)
wherein, KV pmn2pmn1 is pmn2pmn value of KV index of No. 1 crystal module obtained by calculation, KV pmn2pmn2 is pmn2pmn value of KV index of No. 2 crystal module obtained by calculation, and so on, KV pmn2pmn4 is pmn2pmn value of KV index of No. 4 crystal module obtained by calculation, average (KV _ Pack1) is average value of KV index data of No. 1 crystal module obtained by experimental test, that is, all pixel channels; by analogy, average (KV _ Pack4) is the average value of KV index data of No. 4 crystal module obtained by experimental test, i.e. all pixel channels; average (KV _ Pack2) is the average value of KV index data of the No. 2 crystal module obtained by experimental test, namely all pixel channels; the average (KV _ Pack 1: KV _ Pack3) is the average value of KV index data of the No. 1 crystal module, the No. 2 crystal module and the No. 3 crystal module.
2. The module construction method for high-yield module of wide flat-panel CT detector based on module performance prediction as claimed in claim 1, wherein n is 4.
3. The module construction method for high-yield module of wide flat panel CT detector based on module performance prediction as claimed in claim 1, wherein the step 5) of calculating KV ch2 mean value by using the screened raw data of each unit crystal specifically comprises:
KV ch2(i,j,N)＝KV_Pack_N(i,j,N)-KV_Pack_N(i+1,j,N)
the KV ch2 is a ch2 value of the KV index of the crystal module obtained by calculation, that is, a difference value between channels, KV _ Pack _ N (i, j, N) is KV index data of each pixel channel of the crystal module obtained by experimental tests, i is the number of pixel channels, j is the corresponding layer number, and N is a module number.
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