CN109239764A

CN109239764A - A high-yield modular production and assembly method for large flat-panel CT detectors

Info

Publication number: CN109239764A
Application number: CN201810788455.2A
Authority: CN
Inventors: 黎淼; 丁科宇; 黄丹; 赵明坤
Original assignee: Chongqing University of Post and Telecommunications
Current assignee: Chongqing Hualu Medical Technology Co ltd
Priority date: 2018-07-18
Filing date: 2018-07-18
Publication date: 2019-01-18
Anticipated expiration: 2038-07-18
Also published as: CN109239764B

Abstract

The present invention claims a high-yield modular production and assembly method for a large flat-panel CT detector, comprising: randomly selecting n unit crystals obtained from the unit crystal screening process; if the selected unit crystal has radiation damage or afterglow lpp, then Select any other package until there are no RD and AG lpps; filter KV ratio raw data using n crystals, combine into a module raw data matrix; determine pass or fail KV for each package by using the package median for each package to calculate KV pmn2pmn pmn2pmn specification; determines the PASS or FAIL KV ch2 mean specification per package by calculating the KV ch2 mean using the screened raw data for each unit crystal; outputs information for n-unit crystals in a sequence of modules, scan number and crystal number, the Methods The conversion rate of wide-plane CT detector modules can be improved by precomputing and predicting module target performance after the scintillator packaging screening process.

Description

A kind of massive plate CT detector high yield modularized production assemble method

Technical field

The invention belongs to CT imaging fields, more particularly to wide plate CT detector technology.

Background technique

Wide planar architectural CT detector has unique advantage to CT imaging.But due to the consistency of performance of scintillator material It is more demanding, therefore there are some obstacles for detector manufacturing process.Since the IPU construction period, Atlas-8sl module building tool There is low C1 (the peak performance module level that can be used for the imaging of ISO channel) conversion ratio.As shown in Figure 1, according to manufacturing statistics as a result, The current predictive accuracy rate of object module performance is only 40% or so.Due to several, 58.53% building module (as The building of C1 object module) degrade.It is tracked according to performance, it is understood that 80% degradation is by 140KV pmn2pmn specification Caused (difference of adjacent packaging).In addition to the packaging screening process on the pretest device in current block building process it Outside, it is assessed without other packagings.Therefore, because being encapsulated into the non-thread sex differernce between module process, encapsulation performance is likely to It reduces.

Summary of the invention

Present invention seek to address that the above problem of the prior art.Propose a kind of base of conversion ratio for promoting C1 object module In the foreseeable wide plate CT detector high yield module construction method of modularity.Technical scheme is as follows:

A kind of massive plate CT detector high yield modularized production assemble method comprising following steps:

1), after the enterprising row detector unit crystal screening process of crystal test platform, the first step number of obtaining unit crystal It is worth test data, randomly chooses the n unit crystal obtained from unit crystal screening process；

2), if the unit crystal selected has low performance pixel access LPP caused by radiation injury or afterglow property, weigh Newly select any other crystal module until there is no RD radiation injury and AG twilight sunset pps；

3) KV height energy response homogeneity index initial data, is screened using n crystal, combines tool group using data Synthesize the raw data matrix of a CT detector module；

4) it, after obtaining step 3 detector module raw data matrix, is counted by using the KV value of each crystal module It calculates and obtains KV pmn2pmn (difference of adjacent crystal module KV value), determine that each detector module passes through or do not pass through KV Pmn2pmn index screening, if any unit crystal module does not pass through pmn2pmn index, return step 1) and reselect Unit crystal, if current crystal module configuration is continued to execute in next step by all set key indexes；

5), by using each unit crystal screening initial data calculate KV ch2 mean value, determine every packet PASS or FAIL KV ch2 mean value specification, if any unit crystal does not pass through ch2 mean value specification, return step 1 simultaneously reselects list First crystal continues to execute in next step if the configuration of active cell crystal does not fail；

6) information of n unit crystal, scanning number and crystal number, are exported in the sequence of a module.

Further, which is characterized in that n=4.

Further, the step 4) calculates KV by using the crystal KV average value value in each detector module Pmn2pmn, specific formula for calculation are (by taking 4 crystal modules form the production method of a detector module as an example):

KV_pmn2pmn1=average (KV_Pack1)-average (KV_Pack2) KV_pmn2pmn2

=average (KV_Pack2)-average (KV_Pack3)

KV_pmn2pmn3=average (KV_Pack3)-average (KV_Pack4)

KV_pmn2pmn4=average (KV_Pack4)-average (KV_Pack1:KV_Pack3) wherein KV_ Pmn2pmn1 by calculating obtain No. 1 crystal module KV index pmn2pmn value, and so on, KV_pmn2pmn4 is institute Calculate the pmn2pmn value of the KV index of No. 4 crystal modules obtained.Average (KV_Pack1) is No. 1 that experiment test obtains The average value (all pixels channel) of the KV achievement data of crystal module；And so on, average (KV_Pack4) is that experiment is surveyed Try the average value (all pixels channel) of the KV achievement data of No. 4 crystal modules obtained；Average (KV_Pack1:KV_ It Pack3) is No. 1 crystal module, the average value of No. 2 crystal modules and No. 3 crystal module KV achievement datas.

Further, the step 5) is equal by using the screening initial data calculating KV ch2ch of each unit crystal Value, specifically includes:

KV_ch2ch (i, j, N)=KV_Pack_N (i, j, N)-KV_Pack_N (i+1, j, N)

Wherein KV_ch2ch by the ch2ch value of the KV index of crystal module that obtains of calculating it is (between channel and channel poor Different value).KV_Pack_N (i, j, N) is each pixel access KV achievement data of crystal module that experiment test obtains, and i is pixel Port number, j are the corresponding number of plies, and N is module No..

It advantages of the present invention and has the beneficial effect that:

CT detector module assemble method described in the invention significant can improve the most high of wide plate CT detector The raw material conversion ratio of grade performance module.The conversion ratio of highest performance level C1 module can rise to 60% from 40%, this will lead Production is caused to save significantly on.

Based on this module performance prediction technique, detector module assembling flow path can also save the time, because of the party Method can provide and accurately provide the position that crystal should be placed in detector, for reference.Operator can directly be every A module places crystal module, places crystalline material without spending the time to according to CT detector production target guide.

Detailed description of the invention

Fig. 1 is that the assembling of CT detector module is classified flow diagram in the prior art；

Fig. 2 is based on the foreseeable wide plate CT detector high yield module schematic diagram of construction method of modularity.

Specific embodiment

Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, detailed Carefully describe.Described embodiment is only a part of the embodiments of the present invention.

The technical solution that the present invention solves above-mentioned technical problem is:

As shown in Fig. 2, we can obtain list after carrying out scintillator cells crystal screening process on crystal test platform The Primary Numerical test data of first crystal, including KV, radiation injury and twilight sunset specification.We can complete according to following below scheme Module performance prediction:

1. randomly choosing 4 unit crystal from the database obtained in unit crystal screening process

2. if reselecting any other packet until not having the unit crystal of selection has radiation injury or twilight sunset lpp RD and AG lpps

3. screening KV ratio initial data using 4 crystal, it is combined into a module raw data matrix

4. calculating KV pmn2pmn by using the packet intermediate value of each packet.Determine the KV that passes through or fail of every packet Pmn2pmn specification.If any unit crystal is not standardized by pmn2pmn, return step 1 and again selecting unit crystal. Do not fail if be currently configured, continuing with performing the next step

5. the screening initial data by using each unit crystal calculates KV ch2 mean value.Determine every packet PASS or FAIL KV ch2 mean value specification.If any unit crystal does not pass through ch2 mean value specification, return step 1 simultaneously reselects list First crystal.If the configuration of active cell crystal does not fail, continuing with performing the next step

6. exporting the information of 4 unit crystal in the sequence of a module, scanning number and crystal number.

This module construction method significant can improve the Target-C1 module conversion ratio of wide plate CT detector.C1 mesh The conversion ratio of mark module can rise to 60% from 40%, this will lead to, and ICV is significant to save 1 year.

Based on this prediction technique, modular manufacture can also save the time, because this method can provide accurate packaging Position is for reference.Operator directly can place packaging for each module, without spending the time to place according to TST guide Packaging.

Patent protection point

1. the module construction method of wide plate CT detector, to the requirement of scintillator material consistency of performance with higher.

2. predicting the module level of the critical specification of CT detector by using the pretest initial data of scintillator material group Performance.But scintillator quantity is not limited to 4 scintillators.

3. this method can also be used in the horizontal performance of detector for predicting entire CT detector.

The above embodiment is interpreted as being merely to illustrate the present invention rather than limit the scope of the invention.? After the content for having read record of the invention, technical staff can be made various changes or modifications the present invention, these equivalent changes Change and modification equally falls into the scope of the claims in the present invention.

Claims

1. a high-yield modularized production and assembly method for a large flat-panel CT detector, is characterized in that, comprises the following steps:

1) After the detector unit crystal screening process is performed on the crystal test platform, the preliminary numerical test data of the unit crystal is obtained, and n unit crystals obtained from the unit crystal screening process are randomly selected;

2) If the selected unit crystal has radiation damage or low-performance pixel channel LPP caused by afterglow performance, re-select any other crystal module until there is no RD radiation damage and AG afterglow pps;

3), use n crystals to screen the original data of the KV high and low energy response uniformity index, and use the data combination tool to combine the original data matrix of a CT detector module;

4) After obtaining the original data matrix of the detector module in step 3, use the KV value of each crystal module to calculate and obtain KV pmn2pmn (the difference between the KV values of adjacent crystal modules), and determine whether each detector module passed or failed. KV pmn2pmn index screening, if any unit crystal module fails the pmn2pmn index, return to step 1) and re-select the unit crystal, if the current crystal module configuration passes all the set key indexes, continue to the next step;

5). Determine the PASS or FAILKV ch2 mean specification for each package by calculating the KV ch2 mean using the screened raw data of each unit crystal. If any unit crystal fails the ch2 mean specification, go back to step 1 and reselect the unit crystal, if The current unit crystal configuration has not failed, continue to the next step;

6), output the information of n-unit crystals, scan number and crystal number in the sequence of one module.

2 . The high-yield module construction method for a wide flat-panel CT detector based on module performance prediction according to claim 1 , wherein n=4. 3 .

3. The high-yield module construction method for wide flat-panel CT detectors based on module performance prediction according to claim 1, wherein the step 4) calculates by using the crystal KV average value in each detector module KVpmn2pmn, the specific calculation formula is (take the production method of 4 crystal modules to form a detector module as an example):

KV_pmn2pmn1=average(KV_Pack1)-average(KV_Pack2)KV_pmn2pmn2

=average(KV_Pack2)-average(KV_Pack3)

KV_pmn2pmn3=average(KV_Pack3)-average(KV_Pack4)

KV_pmn2pmn4=average(KV_Pack4)-average(KV_Pack1:KV_Pack3)

Wherein KV_pmn2pmn1 is the calculated pmn2pmn value of the KV index of No. 1 crystal module, and so on, KV_pmn2pmn4 is the calculated pmn2pmn value of the KV index of No. 4 crystal module. average(KV_Pack1) is the average value of the KV index data of the No. 1 crystal module obtained by the experimental test, that is, all pixel channels; and so on, average(KV_Pack4) is the average value of the KV index data of the No. 4 crystal module obtained by the experimental test ( All pixel channels); average(KV_Pack1: KV_Pack3) is the average value of the KV index data of No. 1 crystal module, No. 2 crystal module and No. 3 crystal module.

4. The high-yield module construction method for a wide flat-panel CT detector based on module performance prediction according to claim 1, wherein the step 5) calculates the KV ch2ch mean value by using the screening raw data of each unit crystal, specifically include:

KV_ch2ch(i,j,N)=KV_Pack_N(i,j,N)-KV_Pack_N(i+1,j,N)

Among them, KV_ch2ch is the ch2ch value (the difference value between channels) of the KV index of the crystal module obtained by calculation. KV_Pack_N(i,j,N) is the KV index data of each pixel channel of the crystal module obtained by the experimental test, i is the number of pixel channels, j is the corresponding layer number, and N is the module number.