CN109234072A - A kind of cleaning process of indium oxalate dissolving agent composition and etching machines - Google Patents
A kind of cleaning process of indium oxalate dissolving agent composition and etching machines Download PDFInfo
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- CN109234072A CN109234072A CN201811298245.1A CN201811298245A CN109234072A CN 109234072 A CN109234072 A CN 109234072A CN 201811298245 A CN201811298245 A CN 201811298245A CN 109234072 A CN109234072 A CN 109234072A
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- CN
- China
- Prior art keywords
- agent composition
- dissolving agent
- indium oxalate
- indium
- oxalate dissolving
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- 239000000203 mixture Substances 0.000 title claims abstract description 52
- LKEDUJPRSZGTHZ-UHFFFAOYSA-H indium(3+);oxalate Chemical compound [In+3].[In+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O LKEDUJPRSZGTHZ-UHFFFAOYSA-H 0.000 title claims abstract description 42
- 238000005530 etching Methods 0.000 title claims abstract description 34
- 238000004140 cleaning Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 11
- 230000008569 process Effects 0.000 title claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 45
- 239000002253 acid Substances 0.000 claims abstract description 26
- 150000003839 salts Chemical class 0.000 claims abstract description 17
- 239000002738 chelating agent Substances 0.000 claims abstract description 14
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 7
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 19
- 235000002639 sodium chloride Nutrition 0.000 claims description 18
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 13
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 12
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 8
- 239000001103 potassium chloride Substances 0.000 claims description 7
- 235000011164 potassium chloride Nutrition 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 6
- 239000002585 base Substances 0.000 claims description 6
- 235000006408 oxalic acid Nutrition 0.000 claims description 6
- 235000011056 potassium acetate Nutrition 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 5
- ODHCTXKNWHHXJC-VKHMYHEASA-N 5-oxo-L-proline Chemical compound OC(=O)[C@@H]1CCC(=O)N1 ODHCTXKNWHHXJC-VKHMYHEASA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 235000019270 ammonium chloride Nutrition 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 229910000404 tripotassium phosphate Inorganic materials 0.000 claims description 4
- 235000019798 tripotassium phosphate Nutrition 0.000 claims description 4
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 3
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical group OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 125000005586 carbonic acid group Chemical group 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 150000002472 indium compounds Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000000306 component Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 19
- KSOWEPLNZXOTOM-UHFFFAOYSA-N indium;oxalic acid Chemical compound [In].OC(=O)C(O)=O KSOWEPLNZXOTOM-UHFFFAOYSA-N 0.000 description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical group [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 244000025254 Cannabis sativa Species 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910000027 potassium carbonate Inorganic materials 0.000 description 5
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229960001484 edetic acid Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical group OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 2
- 235000003704 aspartic acid Nutrition 0.000 description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000011698 potassium fluoride Substances 0.000 description 2
- 235000003270 potassium fluoride Nutrition 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- -1 amine salt Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- OUVVURZDRALWLT-UHFFFAOYSA-N dipotassium carbonic acid sulfide Chemical compound C(O)(O)=O.[K+].[S-2].[K+] OUVVURZDRALWLT-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- OUDSFQBUEBFSPS-UHFFFAOYSA-N ethylenediaminetriacetic acid Chemical compound OC(=O)CNCCN(CC(O)=O)CC(O)=O OUDSFQBUEBFSPS-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- DPLVEEXVKBWGHE-UHFFFAOYSA-N potassium sulfide Chemical compound [S-2].[K+].[K+] DPLVEEXVKBWGHE-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- UKHWJBVVWVYFEY-UHFFFAOYSA-M silver;hydroxide Chemical compound [OH-].[Ag+] UKHWJBVVWVYFEY-UHFFFAOYSA-M 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/12—Carbonates bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/16—Phosphates including polyphosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a kind of indium oxalate dissolving agent composition, main component includes basic component, chelating agent, pH adjusting agent and water, and the pH value of indium oxalate dissolving agent composition is 8~12；Basic component is to be composed selected from the combination that can ionize one or more of strong base-weak acid salt for generating K+, or by quaternary ammonium base and at least one strong base-weak acid salt that can ionize generation K+.Indium oxalate dissolving agent composition of the present invention optimizes the range of choice of basic component, and basic component is selected from capable of ionizing generation K+One or more of strong base-weak acid salt combination, or by quaternary ammonium base and at least one can ionize generation K+Strong base-weak acid salt be composed, reduce the usage amount of highly basic in indium oxalate dissolving agent, composition is milder, the more environmentally friendly safety of the cleaning of etching machines.
Description
Technical field
The present invention relates to electric slurry technical fields, and in particular to a kind of indium oxalate dissolving agent composition and etching machines
Cleaning process.
Background technique
It is transparent in LCD (liquid crystal display), ELD (electroluminescent display) etc. FPD (flat-panel monitor) display device
Conductive film is mainly used in pixel display electrode.ITO (tin indium oxide), IZO (indium zinc oxide) are oxide membrane system transparent conductive film
Common used material.It needs to use in the processing method of the show electrode of ITO, IZO with ITO etching solution, at present mainstream on the market
Oxalic acid type ITO etching solution answers non-volatility acid mist in its cheap, use process, small to human health threat, and by row
It is outer in the industry to welcome.
The mechanism of action of oxalic acid type etching solution and ito film is by the chelating effect of oxalic acid, by the main component of ITO, IZO
Indium is complexed to form oxalic acid indium to carry out dissolution etching.The long-term continuous use of above-mentioned etching solution, will lead to oxalic acid indium cannot be complete
Fully dissolved is in etching solution and is deposited in the device of wet etching, and specific oxalic acid indium crystallization can deposit to piping, valve, mistake
The positions such as filter, pump, nozzle, substrate transferring roller, etching machine, buffer top tank structure, after the device of deposition oxalic acid indium will affect
Continuous etch effect.
The method of tradition removal oxalic acid indium includes that water flow is rinsed, manually rooted out.CN101876076A discloses a kind of grass
Sour indium dissolving agent composition and its cleaning method are selected comprising alkaline components and from aminopolycanboxylic acid and its salt in composition
One kind or two or more aqueous solution.Further, the pH of dissolving agent composition is 9~11, and component preferably contains in composition
The concentration of compound of the amount to select from aminopolycanboxylic acid is 1~20 weight %；From the group that aminopolycanboxylic acid's amine salt forms
The concentration of the compound selected is 1~20 weight %, and further, aminopolycanboxylic acid is from ethylenediamine diacetic acid, ethylenediamine tetraacetic
Acetic acid, diethylene triamine pentacetic acid (DTPA), triethylenetetramine hexaacetic acid, anti-form-1 select in 2- cyclohexanediamine tetraacetic acid；Amino
Polycarboxylic salt be ethylenediamine diacetic acid, ethylenediamine tetra-acetic acid, diethylene triamine pentacetic acid (DTPA), triethylenetetramine hexaacetic acid, it is trans--
The amine salt of 1,2- cyclohexanediamine tetraacetic acid；Alkaline components are times of ammonia, sodium hydroxide, potassium hydroxide, tetramethyl ammonium hydroxide
It anticipates one kind.
Alkaline components ammonia, sodium hydroxide, potassium hydroxide in above-mentioned composition are inorganic strong alkali, and ammonium hydroxide is volatile, hydrogen
The alkalinity of sodium oxide molybdena and potassium hydroxide is strong, and pH value is not easy to control, and all has strong corrosive, therefore want to the material of etching machines
Ask high, and there is security threat to operator.
Summary of the invention
It is an object of the present invention to overcoming defect existing in the prior art, a kind of indium oxalate dissolving agent combination is provided
Object uses the component of milder in said components, is etching machines cleaning process more safety and environmental protection.
To achieve the above object, the technical solution of the present invention is as follows: a kind of indium oxalate dissolving agent composition, which is characterized in that
Main component includes basic component, chelating agent, pH adjusting agent and water, and the pH value of indium oxalate dissolving agent composition is 8~12；Alkali
Property group be divided into the combination selected from one or more of the strong base-weak acid salt that can ionize generation K+, or by quaternary ammonium base and extremely
A kind of few strong base-weak acid salt that can ionize generation K+ is composed.
Preferred technical solution is that the weight percent of indium oxalate dissolving agent composition neutral and alkali component is 3~15%；Grass
The weight percent of chelating agent is 3~15% in sour indium dissolving agent composition.
Preferred technical solution is that chelating agent is selected from ASPARTIC ACID, Pidolidone, nitrilotriacetic acid, ethoxy second
Ethylenediamine triacetic acid.
Preferred technical solution is also to contain to ionize in indium oxalate dissolving agent composition to generate Cl-Chloride, chlorination
Object is selected from one of hydrogen chloride, potassium chloride, sodium chloride and ammonium chloride or two or more combinations.Free chloride ion is inhaled
Oxalic acid indium surface is invested, the polarization of chloride ion can weaken the bond energy between indium ion and oxalate denominationby, and then accelerate grass
The dissolution of sour indium.
Preferred technical solution is that the weight percent of chloride is 3~9% in indium oxalate dissolving agent composition.
Preferred technical solution is that pH adjusting agent is ammonium hydroxide or dilute hydrochloric acid.
Preferred technical solution is that strong base-weak acid salt is selected from potassium carbonate, potassium acetate, dipotassium hydrogen phosphate, saleratus, phosphorus
One of sour tripotassium or two or more combinations.
Preferred technical solution is that the pH value of indium oxalate dissolving agent composition is 9.5~10.5.PH value is excessive, in system
It is easy to generate silver hydroxide gelatinous precipitate, is unfavorable for the dissolution of oxalic acid indium instead.
The second object of the present invention is to provide a kind of cleaning process of etching machines, which is characterized in that etching machines
Above-mentioned indium oxalate dissolving agent composition is sprayed in middle injection to the inner wall of etching machines, and the etching machines are used to prepare containing indium
Oxide membrane system transparent conductive film, etching solution used by etching machines are oxalic acid type ITO etching solution.
Preferred technical solution is to heat to indium oxalate dissolving agent composition, the then injection or to erosion into etching machines
The inner wall for carving equipment sprays indium oxalate dissolving agent composition, and/or opens the heating element of etching machines；Indium oxalate dissolving agent group
Object heat preservation is closed at 43~48 DEG C.
The advantages and beneficial effects of the present invention are:
Indium oxalate dissolving agent composition of the present invention optimizes the range of choice of basic component, and basic component is selected from can ionize
Generate K+One or more of strong base-weak acid salt combination, or by quaternary ammonium base and at least one can ionize generation K+
Strong base-weak acid salt be composed, reduce the usage amount of highly basic in indium oxalate dissolving agent, composition is milder, etching machines
The more environmentally friendly safety of cleaning.
Specific embodiment
With reference to embodiment, the specific embodiment of the present invention is further described.Following embodiment is only used for more
Add and clearly demonstrate technical solution of the present invention, and not intended to limit the protection scope of the present invention.
The strong base-weak acid salt for generating K+ can be ionized
As the alkaline components of indium oxalate dissolving agent of the invention, such as potassium carbonate, potassium acetate, dipotassium hydrogen phosphate, carbonic acid
Hydrogen potassium, tripotassium phosphate, potassium sulfide, potassium fluoride.It is excellent in view of the bioactivity of fluorine ion in the irritation and potassium fluoride of potassium sulfide
Potassium carbonate, potassium acetate, dipotassium hydrogen phosphate, saleratus, tripotassium phosphate are selected, is examined based on cost and to the solute effect of oxalic acid indium
Consider, more preferably potassium carbonate and potassium acetate.
Quaternary ammonium base
Quaternary ammonium base is organic alkali, preferably tetramethyl ammonium hydroxide (TMAH), tetraethyl ammonium hydroxide (TEAH).
PH adjusting agent
The pH value of oxalic acid indium dissolved composition is 8~12.There are weak acid radical ion, weak acid roots in oxalic acid indium dissolved composition
It is in alkalinity that hydrolysising balance, which occurs, for ion, and the bulk alkaline substance and acid chelating agent additive amount in oxalic acid indium dissolved composition are not
With the pH value for determining composition.When the pH value of composition is less than 8, using ammonium hydroxide as pH adjusting agent；The pH of composition
When value is greater than 12, using dilute hydrochloric acid as pH adjusting agent.
Chelating agent
The range of choice of chelating agent include but is not limited in open file chelating agent disclosed in CN101876076A be ammonia
The cooperation of polycarboxylic acid and the more carboxylic ammonium salts of amino.Based on the alkaline components different from open file are used in this case, preferably
Chelating agent be ASPARTIC ACID, Pidolidone, nitrilotriacetic acid, hydroxyethylethylene diamine tri-acetic acid (HEDTA), more preferably L-
Asparatate, Pidolidone.
It can ionization generation Cl-Chloride
The introducing of chloride ion can accelerate oxalic acid indium solution rate.In view of the free metal ion in part is in alkaline condition
Lower generation precipitating, therefore preferably hydrogen chloride, potassium chloride, sodium chloride and ammonium chloride, it is excellent in order to reduce the introducing of species of metal ion
Select potassium chloride and ammonium chloride.
Embodiment 1-4
The component of embodiment 1-4 indium oxalate dissolving agent composition and the weight percent of component see the table below, and be arranged
Comparative example 1 of the TMAH separately as basic component:
It is found that pH value is in 9.7~10.8 ranges in upper table, potassium concentration increases in indium oxalate dissolving agent composition,
Oxalic acid indium meltage increases.
Embodiment 5-7 is based on embodiment 4, and difference is, and pair that chelating agent is ethylenediamine tetra-acetic acid (EDTA) is arranged
Ratio 2:
Identical potassium concentration and chelating agent concentrations, under the conditions of pH value is similar, the meltage of 45 DEG C of oxalic acid indiums is implemented
Example 5 and 6 is maximum.
Embodiment 8-9
Embodiment 8-9 is based on embodiment 5, and difference is, embodiment 8 uses the potassium carbonate in potassium acetate alternate embodiment 7,
Embodiment 9 is using the potassium carbonate in the composition alternate embodiment 7 of dipotassium hydrogen phosphate and tripotassium phosphate mass ratio 1:1,45 DEG C of grass
Sour indium meltage is 4%.
Embodiment 10-11
Embodiment 10-11 is based on embodiment 5, and difference is, joined 9% chlorination in indium oxalate dissolving agent composition
Ammonium, embodiment 11 joined 3% potassium chloride, and when pH value is 9.87,45 DEG C of oxalic acid indium meltages are 7%.
Potassium chloride is substituted using sodium chloride in embodiment 11, and under similar pH value condition, 45 DEG C of oxalic acid indium meltages are close.
By embodiment 10,11 as can be seen that grass can be increased under conditions of strong base weak acid sylvite and chloride ion exist simultaneously
The maximum meltage of sour indium.
Comparative example 3
Comparative example 3 is based on comparative example 1, using potassium hydroxide as basic component, when pH value is 10.32, and 45 DEG C of oxalic acid indium dissolutions
Amount is 1%.
Individual TMAH and potassium hydroxide is respectively adopted as basic component in comparative example 1 and 3, and oxalic acid indium meltage is 1%,
The solution neutral and alkali component that cleaning etching machines are excluded needs to neutralize removal by acid, contains more salt component in waste water,
Later period liquid waste processing heavy workload.
It is only the preferred embodiment of the present invention described in upper, it is noted that for those skilled in the art
For, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of indium oxalate dissolving agent composition, which is characterized in that main component includes basic component, chelating agent, pH value adjusting
Agent and water, the pH value of indium oxalate dissolving agent composition are 8~12；Basic component is selected from the strong base-weak acid salt that can ionize generation K+
One or more of combination, or by quaternary ammonium base with it is at least one can ionization generate K+ strong base-weak acid salt combine and
At.
2. indium oxalate dissolving agent composition according to claim 1, which is characterized in that alkali in indium oxalate dissolving agent composition
Property component weight percent be 3~15%；The weight percent of chelating agent is 3~15% in indium oxalate dissolving agent composition.
3. indium oxalate dissolving agent composition according to claim 1, which is characterized in that chelating agent is selected from L- asparagine
Acid, Pidolidone, nitrilotriacetic acid, hydroxyethylethylene diamine tri-acetic acid.
4. indium oxalate dissolving agent composition according to claim 1, which is characterized in that in indium oxalate dissolving agent composition also
Cl is generated containing that can ionize-Chloride, chloride be selected from one of hydrogen chloride, potassium chloride, sodium chloride and ammonium chloride or
The two or more combination of person.
5. indium oxalate dissolving agent composition according to claim 4, which is characterized in that chlorine in indium oxalate dissolving agent composition
The weight percent of compound is 3~9%.
6. indium oxalate dissolving agent composition according to claim 4, which is characterized in that pH adjusting agent is ammonium hydroxide or dilute salt
Acid.
7. indium oxalate dissolving agent composition according to claim 6, which is characterized in that strong base-weak acid salt is selected from carbonic acid
One of potassium, potassium acetate, dipotassium hydrogen phosphate, saleratus, tripotassium phosphate or two or more combinations.
8. indium oxalate dissolving agent composition according to claim 1, which is characterized in that the pH of indium oxalate dissolving agent composition
Value is 9.5~10.5.
9. a kind of cleaning process of etching machines, which is characterized in that inject into etching machines or sprayed to the inner wall of etching machines
Indium oxalate dissolving agent composition as claimed in any of claims 1 to 8 in one of claims is spilt, the etching machines are used to prepare oxygen containing indium
Compound membrane system transparent conductive film, etching solution used by etching machines are oxalic acid type ITO etching solution.
10. the cleaning process of etching machines according to claim 9, which is characterized in that indium oxalate dissolving agent composition
Then heating injects into etching machines or sprays indium oxalate dissolving agent composition to the inner wall of etching machines, and/or opens erosion
Carve the heating element of equipment；Indium oxalate dissolving agent composition is kept the temperature at 43~48 DEG C.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113025333A (en) * | 2021-03-01 | 2021-06-25 | 四川江化微电子材料有限公司 | Improved indium oxalate dissolving agent composition and etching equipment cleaning process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201026819A (en) * | 2008-08-14 | 2010-07-16 | Kanto Kagaku | Etching liquid composition for transparent conductive film |
| CN101876076A (en) * | 2009-05-01 | 2010-11-03 | 关东化学株式会社 | Indium oxalate dissolving agent composition |
-
2018
- 2018-11-02 CN CN201811298245.1A patent/CN109234072A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201026819A (en) * | 2008-08-14 | 2010-07-16 | Kanto Kagaku | Etching liquid composition for transparent conductive film |
| CN101876076A (en) * | 2009-05-01 | 2010-11-03 | 关东化学株式会社 | Indium oxalate dissolving agent composition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113025333A (en) * | 2021-03-01 | 2021-06-25 | 四川江化微电子材料有限公司 | Improved indium oxalate dissolving agent composition and etching equipment cleaning process |
| CN113025333B (en) * | 2021-03-01 | 2022-04-08 | 四川江化微电子材料有限公司 | Improved indium oxalate dissolving agent composition and etching equipment cleaning process |
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Application publication date: 20190118 |