CN109216503A - A kind of method that new polycrystalline plated film exception piece is done over again - Google Patents
A kind of method that new polycrystalline plated film exception piece is done over again Download PDFInfo
- Publication number
- CN109216503A CN109216503A CN201810921899.9A CN201810921899A CN109216503A CN 109216503 A CN109216503 A CN 109216503A CN 201810921899 A CN201810921899 A CN 201810921899A CN 109216503 A CN109216503 A CN 109216503A
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- CN
- China
- Prior art keywords
- film
- thickness
- striping
- nanometers
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 230000002159 abnormal effect Effects 0.000 claims abstract description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005554 pickling Methods 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 abstract description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 5
- 239000002253 acid Substances 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The present invention relates to polycrystalline plated film fields.A kind of method that new polycrystalline plated film exception piece is done over again, when the film thickness of silicon wafer, which is more than or equal to 65 nanometers, is less than or equal to 85 nanometers, belong to normal thickness film silicon wafer, it does not need to carry out PSG striping, when film thickness is less than 65 nanometers or is more than or equal to 85 nanometers, belong to the i.e. abnormal piece of abnormal thickness film silicon wafer, when doing over again to abnormal piece, it is carried out according to PSG striping → plated film → silk-screen step, PSG striping is that abnormal piece is placed on pickling in the hydrofluoric acid that volume ratio is 8%, so that film thickness is become 1-10 nanometers, is then washed, dried.The present invention is by striping incomplete in PSG striping, and the thickness for retaining film does not influence subsequent plated film, so as to avoid, to the direct damage of silicon wafer, also avoiding subsequent alkali cleaning correlation step when PSG striping, saving cost, improve benefit.
Description
Technical field
The present invention relates to polycrystalline plated film fields.
Background technique
Common batteries plated film returns the important rework preocess for washing that technique is battery manufacturing process, common plated film extremely
Exception is done over again process are as follows: PSG striping → cleaning (alkali cleaning) → diffusion → wet process trimming → plated film → silk-screen, this is doing over again process ratio just
Normal battery coating process is complicated, and due to multiple etching, causes silicon wafer relatively thin, it is exceeded to be easy to appear fragment rate.
PSG striping to cell piece (abnormal piece) striping abnormal after plated film, is needed using HF acid pickling liquid, hydrofluoric acid sheet
Body reacts the substance for generating and being dissolved in water with silicon nitride film, to achieve the purpose that striping, but due to the otherness of film thickness, in fixation
In concentration hydrofluoric acid medical fluid, striping length of time is different, and silicon wafer is too long in the hydrofluoric acid medical fluid residence time after striping, silicon and hydrogen
Fluoric acid reaction can form etch pit in silicon chip surface, and color is inclined yellow, referred to as porous silicon.Since porous silicon resistivity is high,
It is unfavorable for the production in battery later period, therefore normal rework preocess needs to remove porous silicon using alkali cleaning after striping.
Summary of the invention
The technical problems to be solved by the present invention are: how simple polycrystalline plated film exception piece rework step, while meet again
Secondary plated film demand.
The technical scheme adopted by the invention is that: a kind of method that new polycrystalline plated film exception piece is done over again, when the film of silicon wafer
When thickness is more than or equal to 65 nanometers less than or equal to 85 nanometers, belong to normal thickness film silicon wafer, does not need to carry out PSG striping, work as film
Thickness belongs to the i.e. abnormal piece of abnormal thickness film silicon wafer less than 65 nanometers or when being more than or equal to 85 nanometers, when doing over again to abnormal piece,
It is carried out according to PSG striping → plated film → silk-screen step, PSG striping is that abnormal piece is placed on to acid in the hydrofluoric acid that volume ratio is 8%
It washes, film thickness is made to become 1-10 nanometers, then washed, dried.
As a kind of preferred embodiment: since the rear color of plated film caudacoria is more shallow, can determine film by color
Thickness carries out CCD camera to the film of different-thickness after plated film first and takes pictures, by photograph color and corresponding film thickness input database
In, it is then taken pictures by CCD camera to silicon wafer, photograph in the photograph and database of acquisition is compared into detection, is obtained
The thickness of film.
The beneficial effects of the present invention are: the present invention is by striping incomplete in PSG striping, and retain the thickness of film not shadow
Subsequent plated film is rung, so as to avoid, to the direct damage of silicon wafer, subsequent alkali cleaning correlation step is also avoided when PSG striping, is saved
Cost, improves benefit.
Specific embodiment
The cell piece (silicon wafer) after plated film is detected using CCD camera, is received in CCD camera database comprising interval 1
The cell piece normal data that the film thickness of meter Hou Du is 0-150 nanometers, then selects film thickness less than 65 nanometers by manipulator
Or the cell piece more than or equal to 85 nanometers is that abnormal piece carries out reworked processing, the hydrogen fluorine that reworked processing is first 8% in volume ratio
Pickling in acid, while being detected by thickness of the CCD camera to the film in pickling, pass through machine when film with a thickness of 1-10 nanometers
Tool hand takes out, and with washing 3 minutes is bubbled, 2min is cleaned in overflow, and hot water cleans 1min, then dries, and is sent to filming equipment and is plated
Film, then print electrode (silk-screen).
Claims (2)
1. a kind of method that new polycrystalline plated film exception piece is done over again, it is characterised in that: received when the film thickness of silicon wafer is more than or equal to 65
Rice be less than or equal to 85 nanometers when, belong to normal thickness film silicon wafer, do not need carry out PSG striping, when film thickness less than 65 nanometers or
When person is more than or equal to 85 nanometers, belong to the i.e. abnormal piece of abnormal thickness film silicon wafer, when doing over again to abnormal piece, according to PSG striping → plating
Film → silk-screen step carries out, and PSG striping is that abnormal piece is placed on pickling in the hydrofluoric acid that volume ratio is 8%, and film thickness is made to become 1-
It 10 nanometers, then washed, dried.
2. the method that the new polycrystalline plated film exception piece of one kind according to claim 1 is done over again, it is characterised in that: due to plated film
Caudacoria is rear, and color is more shallow, therefore the thickness of film can be determined by color, carries out first to the film of different-thickness after plated film
CCD camera is taken pictures, and by photograph color with corresponding film thickness input database, is then taken pictures by CCD camera to silicon wafer,
Photograph in the photograph and database of acquisition is compared into detection, obtains the thickness of membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810921899.9A CN109216503A (en) | 2018-08-11 | 2018-08-11 | A kind of method that new polycrystalline plated film exception piece is done over again |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810921899.9A CN109216503A (en) | 2018-08-11 | 2018-08-11 | A kind of method that new polycrystalline plated film exception piece is done over again |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109216503A true CN109216503A (en) | 2019-01-15 |
Family
ID=64987954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810921899.9A Pending CN109216503A (en) | 2018-08-11 | 2018-08-11 | A kind of method that new polycrystalline plated film exception piece is done over again |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109216503A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887369A (en) * | 2014-03-11 | 2014-06-25 | 衡水英利新能源有限公司 | Reworking method of silicon wafer coating film color shading slices |
| CN104485388A (en) * | 2014-12-11 | 2015-04-01 | 东方日升新能源股份有限公司 | Reworking method for defective silicon wafers after PECVD (plasma enhanced chemical vapor deposition) coating of crystal silicon solar cells |
| CN104716206A (en) * | 2015-03-23 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Method for improving defective product reworking conversion efficiency after battery is plated with antireflection film |
| CN105226132A (en) * | 2015-09-25 | 2016-01-06 | 山西潞安太阳能科技有限责任公司 | A kind of solar energy rainbow plate is done over again technique |
-
2018
- 2018-08-11 CN CN201810921899.9A patent/CN109216503A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887369A (en) * | 2014-03-11 | 2014-06-25 | 衡水英利新能源有限公司 | Reworking method of silicon wafer coating film color shading slices |
| CN104485388A (en) * | 2014-12-11 | 2015-04-01 | 东方日升新能源股份有限公司 | Reworking method for defective silicon wafers after PECVD (plasma enhanced chemical vapor deposition) coating of crystal silicon solar cells |
| CN104716206A (en) * | 2015-03-23 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Method for improving defective product reworking conversion efficiency after battery is plated with antireflection film |
| CN105226132A (en) * | 2015-09-25 | 2016-01-06 | 山西潞安太阳能科技有限责任公司 | A kind of solar energy rainbow plate is done over again technique |
Non-Patent Citations (3)
| Title |
|---|
| 张明: "《纳米与新材料专辑 3》", 25 October 2004 * |
| 管绍茂 等: "《半导体表面钝化技术及其应用》", 31 July 1981, 国防工业出版社 * |
| 黄汉尧: "《半导体器件工艺原理》", 30 June 1980 * |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190115 |