CN109216400B - Mass transfer device of Micro LED array device and related method - Google Patents
Mass transfer device of Micro LED array device and related method Download PDFInfo
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- CN109216400B CN109216400B CN201811268052.1A CN201811268052A CN109216400B CN 109216400 B CN109216400 B CN 109216400B CN 201811268052 A CN201811268052 A CN 201811268052A CN 109216400 B CN109216400 B CN 109216400B
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract
According to the Micro LED array device and the manufacturing method thereof, the bulk transfer device and the transfer method, the magnetic nano thin film layer is formed on the epitaxial substrate of the Micro LED array device and serves as one electrode of the Micro LED array device, so that the Micro LED array device can be directly adsorbed by magnetic force, a magnetic layer does not need to be additionally arranged, the processes of manufacturing and removing the magnetic layer are avoided, the transfer method of the Micro LED array device can be simplified, and the bulk transfer efficiency of the Micro LED is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a massive transfer device of a Micro LED array device and a related method.
Background
The display technology of LED (Light Emitting Diode) backlight is widely used in various industries. The existing LED is mainly used for medium and large-size display screens. Taking a 55-inch 4K television as an example, the pixel length and width are about 200 μm, while the mainstream specification of the direct type backlight is 3030(3mm × 3 mm).
At present, the pixel pitch of most of light emitting diode displays is more than 100 micrometers, and the light emitting diode displays cannot become point light sources when being used as backlight sources with the size much larger than that of pixels. The high-quality full-color effect can be realized only by matching the surface light source with the liquid crystal and the color filter. But liquid crystal displays consume most of the light: light leaves the backlight module, passes through a Thin Film Transistor (TFT), a liquid crystal, a polarizer and a color filter, and then enters human eyes, the loss of light exceeds nine times, most of light is consumed in the display casing, and the utilization rate of light is extremely poor.
With the development of LED technology, it is possible to directly use LEDs as light emitting display pixels, and Mini LEDs of about 50 to 60 micrometers and Micro LEDs of 15 micrometers or less are gradually widely used.
However, in the process of manufacturing the Micro LED, the Micro LED needs to be transferred from the initial epitaxial substrate to the circuit substrate in bulk, and one of the difficulties in the current development of the Micro LED technology is the bulk transfer process of the Micro LED.
Disclosure of Invention
In view of this, the present invention provides a bulk transfer apparatus and a bulk transfer method for Micro LED array devices, which utilize magnetic force to realize bulk transfer of Micro LEDs, and the transfer process is easy to implement and improves transfer efficiency.
In order to achieve the purpose, the invention provides the following technical scheme:
a bulk transfer apparatus for Micro LED array devices, comprising:
a first adsorption device and a second adsorption device;
the first adsorption device comprises an electrostatic adsorption device, an electrostatic control circuit and a plurality of electrostatic adsorption holes positioned on the electrostatic adsorption device; the electrostatic control circuit is used for controlling the electrostatic adsorption force of the electrostatic adsorption hole;
the second adsorption equipment includes and shifts receiving arrangement, magnetic field control circuit and is located shift a plurality of magnetic force absorption holes on the receiving arrangement, magnetic field control circuit is used for controlling the magnetic field intensity that the magnetic force absorption hole corresponds the position.
Preferably, a groove is further formed in the transfer receiving device, and the groove is used for accommodating the transferred Micro LED chip.
The invention also correspondingly provides a huge transfer method of the Micro LED array device, which is applied to the huge transfer device of the Micro LED array device to transfer the Micro LED array device, and the huge transfer method of the Micro LED array device comprises the following steps:
moving a first adsorption device of a mass transfer device of the Micro LED array device to one side of the Micro LED array device, which is far away from the epitaxial substrate, and aligning electrostatic adsorption holes of the first adsorption device with the Micro LEDs one by one;
electrifying an electrostatic control circuit in the first adsorption device to control the adsorption force of the electrostatic adsorption hole so that the Micro LED array device is adsorbed on the first adsorption device;
removing the epitaxial substrate of the Micro LED array device;
moving the first adsorption device adsorbed with the Micro LED array device to one side of a transfer receiving device of a second adsorption device, and aligning the Micro LED array device with a magnetic adsorption hole on the transfer receiving device;
and electrifying the magnetic field control circuit in the second adsorption device, and stopping electrifying the static electricity control circuit, so that the Micro LED array device is adsorbed to the transfer receiving device under the action of the magnetic field.
According to the technical scheme, the magnetic nano thin film layer is formed on the epitaxial substrate of the Micro LED array device and serves as one electrode of the Micro LED array device, so that the Micro LED array device can be directly adsorbed by magnetic force without additionally arranging a magnetic layer, the manufacturing and removing processes of the magnetic layer are avoided, the transfer method of the Micro LED array device can be simplified, and the huge transfer efficiency of the Micro LED is improved.
The Micro LED array device comprises a magnetic nano thin film layer, the invention also provides a Micro LED huge transfer device, the static adsorption of the static adsorption device and the magnetic adsorption of the magnetic transfer device are used, when the Micro LED array device is transferred to a circuit board or a transfer receiving device, the static electricity and the magnetic field on the huge transfer device are directly controlled, so that the Micro LED array device can be separated from the static adsorption device under the action of gravity and magnetic force and fall onto the transfer receiving device, and the transfer of the Micro LED array device is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a Micro LED array device according to an embodiment of the present invention;
FIG. 2 is a flowchart of a method for fabricating a Micro LED array device according to an embodiment of the present invention;
3-5 are process step diagrams of a method for manufacturing a Micro LED array device according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a bulk transfer apparatus for Micro LED array devices according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an electrostatic adsorption device according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a transfer receiving apparatus according to an embodiment of the present invention;
FIG. 9 is a schematic flow chart of a mass transfer method for Micro LED array devices according to an embodiment of the present invention;
fig. 10-15 are process step diagrams of a bulk transfer method for Micro LED array devices according to an embodiment of the present invention.
Detailed Description
As mentioned in the background section, one of the difficulties in the current development of Micro LED technology is the bulk transfer process of Micro LEDs.
The inventors have found that bulk transfer by means of bonding or the like is provided in the prior art, but the bonding requires the provision of a bonding layer and subsequent removal, making the bulk transfer process less efficient. Or a structure that a magnetic layer is additionally arranged in an external structure of the light emitting diode and is attracted by magnetic force is provided in the prior art, but the adhesion layer is required to adhere a plurality of Micro LED array devices together, the adhesion layer is required to be removed subsequently, and the additionally arranged magnetic layer is required, so that the operation is complex and the number of steps is large in the process of transferring the Micro LED array devices in a large quantity.
Based on this, the present invention provides a Micro LED array device, comprising:
a Micro LED array device, comprising:
an epitaxial substrate;
the magnetic nano thin film layer array is positioned on the surface of the epitaxial substrate, and one magnetic nano thin film layer is used as a first electrode of the Micro LED;
and the light-emitting diode structure is positioned on each magnetic nano thin film layer and at least comprises a first type semiconductor layer, a multi-quantum well layer, a second type semiconductor layer and a second electrode which are sequentially arranged along the direction deviating from the epitaxial substrate.
According to the Micro LED array device provided by the invention, the magnetic nano thin film layer is formed on the epitaxial substrate of the Micro LED array device and is used as one electrode of the Micro LED array device, so that the Micro LED array device can be directly adsorbed by adopting magnetic force without additionally arranging a magnetic layer, the processes of manufacturing and removing the magnetic layer are avoided, the transfer method of the Micro LED array device can be simplified, and the huge transfer efficiency of the Micro LED is further improved.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a Micro LED array device, please refer to fig. 1, and fig. 1 is a schematic structural diagram of a Micro LED array device provided in an embodiment of the present invention, where the Micro LED array device includes: an epitaxial substrate 1; the array of magnetic nano thin film layers 2 is positioned on the surface of the epitaxial substrate 1, and one magnetic nano thin film layer 2 is used as a first electrode of a Micro LED; and the light-emitting diode structure is positioned on each magnetic nano thin film layer 2 and at least comprises a first type semiconductor layer 4, a multi-quantum well layer 5, a second type semiconductor layer 6 and a second electrode 9 which are sequentially arranged along the direction departing from the epitaxial substrate 1.
In an embodiment of the present invention, the specific material of the magnetic nano thin film layer is not limited as long as the magnetic nano thin film layer can have magnetism, and in an embodiment of the present invention, the material of the magnetic nano thin film layer is selected from the group consisting of Co, GaMnN, GaMnAs, GaMnSb, and ZnO: GaFeN. Wherein, the ZnO and the Co are ZnO films doped with Co. ZnO-Ni: the GaFeN is a composite film of a ZnO film doped with metal Ni and the GaFeN.
In this embodiment, the thickness of the magnetic nano thin film layer is not limited, and the thickness of the magnetic nano thin film layer ranges from 70nm to 120nm, inclusive.
In order to improve the light emitting efficiency, in this embodiment, a patterning may be further formed on the magnetic nano thin film layer, so as to reflect light emitted from the multiple quantum well layer of the light emitting diode structure, increase the light emitting amount, and improve the light emitting efficiency of the light emitting diode. The pattern on the magnetic nano thin film layer is not limited in this embodiment, and in one embodiment of the present invention, the magnetic nano thin film layer has a nano array pattern thereon. The nano-array pattern is specifically a nano-size pattern. The specific shape of the nano array pattern is not limited in this embodiment, and the nano array pattern may be a cylindrical or cubic array pattern. That is, the nano array pattern is circular or rectangular in a top view structure of the magnetic nano thin film layer, but is cylindrical or cubic in a three-dimensional structure.
In the manufacturing process, a step of forming a buffer layer may be further included after the magnetic nano thin film layer is formed on the epitaxial structure, where the buffer layer 3 is located on a surface of each magnetic nano thin film layer 2 facing away from the epitaxial substrate 1. The buffer layer has the advantages of improving the growth quality of the film and promoting the quantum effect.
In the embodiment of the present invention, the magnetic nano thin film layer is used as one electrode of the light emitting diode, and therefore, the light emitting diode structure on the magnetic nano thin film layer is claimed in this embodiment to be a structure with one electrode removed, that is, to include the first-type semiconductor layer, the multiple quantum well layer, the second-type semiconductor layer, and the second electrode. In this embodiment, the specific material of the first type semiconductor layer and the second type semiconductor layer is not limited, and the first type semiconductor layer may be N-type GaN, P-type GaN, other GaAs material, GaP material, or the like. Correspondingly, the second type semiconductor layer may be P-type GaN, N-type GaN, or other GaAs materials or GaP materials. For convenience of illustration in this embodiment, optionally, the first type semiconductor layer is N-type GaN, and the second type semiconductor layer is P-type GaN.
In order to improve the conductivity and the light emitting efficiency, a transparent conductive layer 7 may be further included on the P-type GaN in this embodiment; the transparent conducting layer 7 is located on the surface of each second-type semiconductor layer 6 facing away from the epitaxial substrate 1. In addition, in order to facilitate display and form a color display, the transparent conductive layer in this embodiment is a quantum dot conductive film, and the quantum dot conductive film includes a red quantum dot conductive film, a green quantum dot conductive film, and a blue quantum dot conductive film. The transparent conductive layer with red light quantum dots, green light quantum dots and blue light quantum dots is placed on the P-type GaN, the quantum dot conductive film is made of anisotropic conductive colloid mixed with quantum dot materials of various colors and is distributed on the P-type GaN in a spin coating, ink jet and drip mode, the proportion of conductive particles in the anisotropic conductive colloid is 40% -70%, and the conductive particles mainly comprise ITO powder, ZnO powder, Ag nano particles, Al nano particles and the like.
The quantum dots are formed by mixing one or more of II-VI group or III-V group semiconductor compounds, and the II-VI semiconductor compound is any one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgZnS, HgSeSTe, HgZnSeTe, CdHgSTe and CdHgSeTe.
The III-V semiconductor compound is any one of GaN, GaP, AlN, GaAs, AlP, AlAs, InN, InP, InAs, GaNP, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInPAs, InAlN, and AlPAs.
In the embodiment, the sizes of the red light quantum dot, the green light quantum dot and the blue light quantum dot transparent conducting layers are less than 5 nm; the red light quantum dots, the blue light quantum dots, the green light quantum dots and the transparent conductive layer mixed with conductive particles are arranged on the P-type GaN layer to form a transparent conductive layer generating multi-wavelength fluorescence, and the GaN-based light-emitting diode is excited by blue light, so that full-color display is formed.
In this embodiment, a passivation film 8 may be formed, and the passivation film 8 is mainly SiO2、Si3N4、SiONx、Al2O3Finally, an RGB three-color Micro LED array chip is formed.
In this embodiment, the specific material of the epitaxial substrate is not limited, and the epitaxial substrate may be Al2O3SiC, GaAs, Si, AlGaInP, etc., in this embodiment, Al is selected2O3。
The invention provides a Micro LED array device, wherein a magnetic nano thin film layer is formed on an epitaxial substrate of the Micro LED array device and is used as one electrode of the Micro LED array device, so that the Micro LED array device can be directly adsorbed by magnetic force without additionally arranging a magnetic layer, the processes of manufacturing and removing the magnetic layer are avoided, the transfer step of the Micro LED array device can be simplified, and the huge transfer efficiency of the Micro LED is improved.
In addition, an embodiment of the present invention further provides a method for manufacturing a Micro LED array device, as shown in fig. 2, for manufacturing and forming the Micro LED array device described in the above embodiment, where the method for manufacturing a Micro LED array device includes:
s101: providing an epitaxial substrate;
in this embodiment, the material of the epitaxial substrate is not limited, and optionally, the material of the epitaxial substrate in this embodiment is single crystal Al2O3A substrate.
Before forming a subsequent epitaxial layer structure, the epitaxial substrate can be pretreated, and the pretreatment modes are different according to different epitaxial substrate materials.
The pretreatment comprises the following steps: ultrasonically cleaning the surface of the epitaxial substrate by using acetone, isopropanol and deionized water, and spin-drying by using a spin dryer; placing the mixture into a cavity of MBE (Molecular Beam Epitaxy) or MOCVD (Metal-organic Chemical Vapor Deposition), heating to 600-900 ℃, annealing for 30-60 mins, and cooling to room temperature.
S102: forming a magnetic nano film layer on the epitaxial substrate;
referring to fig. 3, a magnetic nano-thin film layer 20 is formed on an epitaxial substrate.
In an embodiment of the present invention, the specific material of the magnetic nano thin film layer is not limited as long as the magnetic nano thin film layer can have magnetism, and in an embodiment of the present invention, the material of the magnetic nano thin film layer is selected from the group consisting of Co, GaMnN, GaMnAs, GaMnSb, and ZnO: GaFeN. Wherein, the ZnO and the Co are ZnO films doped with Co. ZnO-Ni: the GaFeN is a composite film of a ZnO film doped with metal Ni and the GaFeN.
When the material of the magnetic nano film layer is ZnO: Co, the forming of the whole magnetic nano film layer on the epitaxial substrate specifically comprises:
preparing a ZnO buffer layer on the epitaxial substrate;
the method specifically comprises the following steps: controlling the temperature of the epitaxial substrate at 300-700 ℃, controlling the Zn evaporation source at 300-400 ℃, growing the ZnO buffer layer with the thickness of 10-80 nm, and closing the Zn evaporation source; heating the epitaxial substrate to 600-900 ℃ for annealing.
And introducing a Co source on the ZnO buffer layer to form a ZnO/Co thin film layer.
And controlling the temperature of the Zn evaporation source to be 300-400 ℃ and the temperature of the Co evaporation source to be 1300-1500 ℃ again to prepare the ZnO and Co film with the thickness of 70-120 nm.
The surface of the magnetic nano film layer, which is far away from the epitaxial substrate, further comprises a nano array pattern, and after the magnetic nano film layer is formed on the epitaxial substrate, the method further comprises the following steps:
and sequentially forming photoresist, laser direct-writing exposure and development on the magnetic nano thin film layer to form a graphical magnetic nano thin film layer.
Referring to FIG. 4, specifically, a photoresist nanoarray pattern is prepared on an epitaxial substrate with a prepared magnetic nano-film by spin coating, laser direct writing exposure and development, and etched on ZnO: Co by ICP or RIEForming a nano-array pattern on the magnetic film, wherein the laser power of the laser direct writing device is 150 muJ/mm2～450μJ/mm2The scanning speed is 200mm/s, and the step is 100 nm. In the embodiment, the nano array is accurately prepared by the laser direct writing technology, so that the photoetching times are simplified, the precision of the patterned substrate is improved, the nano array with the controllable size is realized, and the light extraction efficiency is improved.
S103: sequentially epitaxially growing a first type semiconductor layer, a multi-quantum well layer and a second type semiconductor layer;
referring to fig. 5, a first type semiconductor layer 4, a multiple quantum well layer 5, and a second type semiconductor layer 6 are epitaxially grown in this order on the surface of the magnetic nano thin film layer 2. If the buffer layer 5 is included, a step of forming a buffer is also included.
In the embodiment, an epitaxial buffer layer, an N-GaN layer, an MQW layer and a P-GaN layer are prepared on an epitaxial substrate with a ZnO: Co nano array through epitaxial growth.
S104: and etching from the direction of the second type semiconductor layer towards the epitaxial substrate to the interface of the epitaxial substrate and the magnetic nano thin film layer to form a plurality of Micro LED array devices.
The Micro LED array is realized by glue homogenizing, exposure, and deep Etching to a substrate by ICP (inductively Coupled Plasma) or RIE (Reactive Ion Etching).
S105: forming a second electrode on each of the Micro LEDs;
preparing a second electrode by Egun (electron beam) or Sputter (sputtering process) evaporation, and preparing a passivation film on the second electrode, wherein the passivation film is mainly SiO2、Si3N4、SiONx、Al2O3Finally, an RGB three-color Micro LED array chip is formed.
And finally, after the manufacturing of each layer of structure of the light emitting diode is finished, carrying out a cutting process, and cutting to obtain the Micro LED array device with a plurality of Micro LED arrays on one epitaxial substrate. It should be noted that, in this embodiment, the cutting depth is not limited, and the epitaxial substrate may be cut by the cutting process, but in order to ensure that the epitaxial substrate is of an integral structure, the cutting depth of the epitaxial substrate should not be too deep, so as to avoid cracking of the epitaxial substrate and resulting in fracture.
The method for manufacturing the Micro LED array device provided by the embodiment of the invention is used for forming the Micro LED array device in the above embodiment, so that the method is suitable for a magnetic mass transfer device to carry out mass transfer by using magnetic force, and the magnetic nano film is used as one electrode of the Micro LED device, so that the step of additionally arranging a magnetic layer and removing the magnetic layer after the transfer is finished is avoided, and the mass transfer efficiency of the Micro LED device can be improved.
In another embodiment of the present invention, a bulk transfer apparatus for Micro LED array devices is further provided, as shown in fig. 6, including: a first adsorption device 31 and a second adsorption device 32;
the first suction device 31 includes an electrostatic suction device 311, an electrostatic control circuit 312, and a plurality of electrostatic suction holes on the electrostatic suction device 311, see fig. 7; the electrostatic control circuit 312 is used for controlling the electrostatic adsorption force of the electrostatic adsorption hole;
the second adsorption device 32 includes a transfer receiving device 321, a magnetic field control circuit 322, and a plurality of magnetic adsorption holes located on the transfer receiving device 321, referring to fig. 8, the magnetic field control circuit 322 is used to control the magnetic field intensity of the corresponding positions of the magnetic adsorption holes.
In this embodiment, the first adsorption device is used for picking up the Micro LED array device, and the second adsorption device is used for receiving the transferred Micro LED array device. Under the condition of the prior art, the Micro LED core particles are difficult to manufacture into completely regular shapes, irregular shapes are separated by gravity, the shifting position deviation can be caused, the yield loss can be caused during huge shifting, the electrostatic adsorption and the magnetic adsorption are combined to shift in the embodiment, the position alignment during shifting can be ensured, and the yield during huge shifting is improved.
The first adsorption device is used for adsorbing the surface of the Micro LED array device, which is far away from the epitaxial substrate, and comprises an electrostatic adsorption device and an electrostatic control circuit, wherein the electrostatic adsorption device comprises a plurality of electrostatic adsorption holes, the size of the electrostatic adsorption holes is not limited in the embodiment, the electrostatic adsorption holes can be selected according to the specific size of the Micro LED device, the diameter range of the electrostatic adsorption holes is 0.5-100 microns, the electrostatic adsorption holes in each area are separately controlled by the electrostatic control circuit in a partitioning mode, and the electrostatic control circuit is also used for controlling the electrostatic adsorption force of the electrostatic adsorption holes. In the embodiment, each electrostatic adsorption hole can be independently driven by the electrostatic control circuit to control the generation and annihilation of static electricity, so that the absorption, transfer and reception of single core particles are realized.
The second adsorption device comprises a transfer receiving device, a magnetic field control circuit and a plurality of magnetic adsorption holes, the magnetic adsorption holes are located on the transfer receiving device, the transfer receiving device is used for receiving the Micro LED devices, and the magnetic field control circuit in the second adsorption device controls the magnetic field of the magnetic adsorption holes in the transfer receiving device to adsorb the Micro LED devices and complete the transfer of the Micro LED array devices due to the fact that the first electrodes of the Micro LEDs, namely the lower electrodes in the embodiment, are magnetic. When the Micro LED device is provided with red light quantum dots, green light quantum dots and blue light quantum dots, the RGB three-color Micro LED array transfer can be realized.
Because transfer when transferring receiving arrangement, need carry out the counterpoint, in order to make the counterpoint more accurate and quick in this embodiment, still be provided with the recess on the transfer receiving arrangement, the recess is used for holding the Micro LED chip after the transfer.
The size of the groove can be replaced according to the size of a Micro LED chip, the depth of the groove is 2-10 mu m, the size of the groove is 5-100 mu m, the bottom of the groove is provided with a plurality of magnetic adsorption holes of 0.5-2 mu m, a magnetic field is controlled in a partition mode, the receiving error is reduced, and the error is smaller than 1 mu m; the transfer receiving device controls a magnetic field through the magnetic field control circuit, sucks the lower electrode with the magnetic semiconductor thin film electrode, and realizes that the Micro LED array chip falls into the fixed groove of the magnetic field transfer receiving device under the action of gravity and magnetic field adsorption by changing the size of the magnetic field of the lower magnetic field control circuit, so that the Micro LED array chip is picked up and placed, and the mass transfer of the Micro devices is realized.
In addition, in this embodiment, the electrostatic adsorption device and the magnetic field transfer receiving device are detachable, and a device with a proper size can be selected according to the size of the LED array.
The present invention further provides a bulk transfer method for a Micro LED array device, referring to fig. 9, where the bulk transfer method is applied to the bulk transfer apparatus for a Micro LED array device in the previous embodiment, and in transferring the Micro LED array device in the previous embodiment, the bulk transfer method for a Micro LED array device includes:
s201: moving a first adsorption device of a mass transfer device of the Micro LED array device to one side of the Micro LED array device, which is far away from the epitaxial substrate, and aligning electrostatic adsorption holes of the first adsorption device with the Micro LEDs one by one;
referring to fig. 10, the Micro LED array devices formed on the epitaxial substrate 1 are all transferred to a transfer receiving device.
In this embodiment, the placing direction of the Micro LED array device is not limited, and in a three-dimensional space with the ground as a reference system, the Micro LED array device may be located above the epitaxial substrate, at this time, the first suction device moves to above the Micro LED array device, and the Micro LED array device may also be located below the epitaxial substrate, at this time, the first suction device moves to above the Micro LED array device. In the following embodiments, the Micro LED array device is mainly located above the epitaxial substrate.
S202: electrifying an electrostatic control circuit in the first adsorption device to control the adsorption force of the electrostatic adsorption hole so that the Micro LED array device is adsorbed on the first adsorption device;
referring to fig. 11, when the Micro LED array device is located above the epitaxial substrate in the three-dimensional space with the ground as the reference system, the electrostatic attraction force must be larger than the gravity of the Micro LED array device to attract and transfer the Micro LED array device.
S203: and removing the epitaxial substrate of the Micro LED array device.
Fig. 12 shows the structure after the epitaxial substrate is removed.
In this embodiment, a specific process for removing the epitaxial substrate of the Micro LED array device is not limited, and in an embodiment of the present invention, the epitaxial substrate may be removed by a laser lift-off method, so as to expose the first electrode of the light emitting diode formed by the magnetic nano thin film.
The laser stripping equipment has the wavelength of 260nm, the preferred laser stripping mode is progressive scanning stripping, the scanning frequency is 1.6-3.2 KHz, and the laser power is 0.4-2W.
S204: moving the first adsorption device adsorbed with the Micro LED array device to one side of the transfer receiving device of the second adsorption device; aligning the Micro LED array device to a magnetic adsorption hole on the transfer receiving device;
after the epitaxial substrate is peeled off, the magnetic field transfer receiving device is placed below the Micro LED array device, please refer to fig. 13, the receiving device and the adsorption alignment precision is determined by laser positioning, the transfer deviation of the Micro LED array chip is ensured to be less than 0.5 μm, and the preferred spacing between the magnetic semiconductor thin film electrode and the magnetic field transfer receiving device for aligning the static electricity is preferably 5um to 200um, wherein the most preferred spacing is 10 um.
The transfer receiving device can be provided with a groove for accurate alignment, the size of the groove can be replaced according to the size of a Micro LED chip, the depth of the groove is 2-10 mu m, the size of the groove is 5-100 mu m, the bottom of the groove is provided with a plurality of magnetic adsorption holes with the size of 0.5-2 mu m, a magnetic field is controlled in a partitioning mode, the receiving error is reduced, and the error is smaller than 1 mu m.
S205: and electrifying the magnetic field control circuit in the second adsorption device, and stopping electrifying the static electricity control circuit, so that the Micro LED array device is adsorbed to the transfer receiving device under the action of the magnetic field.
If the Micro LED array device is positioned above the epitaxial substrate in a three-dimensional space with the ground as a reference system, the transfer receiving device can also reduce the magnetic adsorption effect by means of the gravity effect in the adsorption process.
Referring to fig. 14, the magnetic field control circuit in the second adsorption device is powered on, and the static control circuit is powered off, so that the Micro LED array device is adsorbed onto the transfer receiving device 321 under the action of the magnetic field. And finally, separating the transfer receiving device from the adsorption device, and transferring the Micro LED onto the transfer receiving device.
In the embodiment, the electrostatic adsorption substrate and the magnetic field intensity accurately control the adsorption magnetic electrode, so that huge transfer of Micro LEDs can be effectively carried out, and industrial production is realized.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (3)
1. A bulk transfer apparatus for Micro LED array devices, comprising:
a first adsorption device and a second adsorption device;
the first adsorption device comprises an electrostatic adsorption device, an electrostatic control circuit and a plurality of electrostatic adsorption holes positioned on the electrostatic adsorption device; the electrostatic control circuit is used for controlling the electrostatic adsorption force of the electrostatic adsorption hole;
the second adsorption equipment includes and shifts receiving arrangement, magnetic field control circuit and is located shift a plurality of magnetic force absorption holes on the receiving arrangement, magnetic field control circuit is used for controlling the magnetic field intensity that the magnetic force absorption hole corresponds the position.
2. The bulk transfer device for Micro LED array devices of claim 1, wherein the transfer receiving device is further provided with a groove for accommodating the transferred Micro LED chips.
3. A mass transfer method for Micro LED array devices, which is applied to the mass transfer apparatus for Micro LED array devices according to any one of claims 1-2, and is used for transferring Micro LED array devices with one electrode being a magnetic nano thin film, the mass transfer method for Micro LED array devices comprising:
moving a first adsorption device of a mass transfer device of the Micro LED array device to one side of the Micro LED array device, which is far away from an epitaxial substrate, and aligning electrostatic adsorption holes of the first adsorption device with the Micro LEDs one by one;
electrifying an electrostatic control circuit in the first adsorption device to control the adsorption force of the electrostatic adsorption hole so that the Micro LED array device is adsorbed on the first adsorption device;
removing the epitaxial substrate of the Micro LED array device;
moving the first adsorption device adsorbed with the Micro LED array device to one side of a transfer receiving device of a second adsorption device, and aligning the Micro LED array device with a magnetic adsorption hole on the transfer receiving device;
and electrifying the magnetic field control circuit in the second adsorption device, and stopping electrifying the static electricity control circuit, so that the Micro LED array device is adsorbed to the transfer receiving device under the action of the magnetic field.
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| CN110335844B (en) * | 2019-06-17 | 2021-08-03 | 华中科技大学 | MicroLED bulk transfer device and method based on selective heating demagnetization |
| WO2021046684A1 (en) * | 2019-09-09 | 2021-03-18 | 重庆康佳光电技术研究院有限公司 | Mass transfer apparatus and method therefor |
| CN110660712B (en) * | 2019-10-08 | 2021-12-28 | 深圳市思坦科技有限公司 | LED transfer method and device and chip magnetic end forming method |
| CN111081608B (en) * | 2019-12-25 | 2022-04-12 | 上海天马微电子有限公司 | Chip transfer method, chip and display panel |
| CN112420587A (en) * | 2020-03-09 | 2021-02-26 | 点栈(绍兴)智能科技有限公司 | Micro LED arrangement method based on electrophoresis robot |
| CN111508888B (en) * | 2020-04-26 | 2024-04-05 | Tcl华星光电技术有限公司 | LED array transfer device and LED array transfer method |
| CN113675079B (en) * | 2020-05-14 | 2022-08-23 | 重庆康佳光电技术研究院有限公司 | Transfer method and display device |
| CN111863694B (en) * | 2020-07-17 | 2022-03-29 | 深圳市华星光电半导体显示技术有限公司 | Transfer device and transfer method |
| CN113053793B (en) * | 2021-03-19 | 2023-02-03 | 江西乾照光电有限公司 | Mass transfer device and method for Micro LED array device |
| CN115207182B (en) * | 2022-09-15 | 2022-12-13 | 南昌凯捷半导体科技有限公司 | Red light mini LED with P-side thin film conducting layer and preparation method thereof |
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