CN109213374A - A kind of transducer production method and its sensor - Google Patents
A kind of transducer production method and its sensor Download PDFInfo
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- CN109213374A CN109213374A CN201810956423.9A CN201810956423A CN109213374A CN 109213374 A CN109213374 A CN 109213374A CN 201810956423 A CN201810956423 A CN 201810956423A CN 109213374 A CN109213374 A CN 109213374A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
Abstract
The present invention relates to field of display technology, disclose a kind of transducer production method and its sensor, the preparation method of the sensor forms the first conductive layer the following steps are included: provide quantum dot film on quantum dot film, first conductive layer is handled, to form the first circuit on quantum dot film, substrate is provided, forms the second conductive layer on substrate, second conductive layer is handled, to form second circuit on substrate, the first circuit and second circuit are electrically connected, form sensor.The transducer production method for implementing the embodiment of the present invention, can be improved touch screen color purity, colour rendering, reduction rate and touch screen NTSC color gamut.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of transducer production methods and its sensor.
Background technique
Touch screen is a kind of induction type liquid crystal display, since it is excellent with ease for operation, intuitive and flexibility etc.
Point is a kind of main human-computer interaction means equipment.While touch screen is widely used in intelligent terminal, user is to its vision
The requirement of effect is increasingly increased.
However, most of touch screen sensor must obtain three kinds of red blue green substantially by colored filter in the market
Color, this mode will lead to low touch screen color purity, colour rendering and reduction rate is low and touch screen NTSC color gamut is relatively low.
Summary of the invention
The invention discloses a kind of transducer production method and its sensors, are applied to display equipment, can be improved touch-control
Shield color purity, colour rendering, reduction rate and touch screen NTSC color gamut.
In a first aspect, the described method comprises the following steps the embodiment of the invention discloses a kind of transducer production method:
Quantum dot film is provided；
The first conductive layer is formed on the quantum dot film；
First conductive layer is handled, to form the first circuit on the quantum dot film；
Substrate is provided；
The second conductive layer is formed on the substrate；
Second conductive layer is handled, to form second circuit on the substrate；
First circuit is connected with the second circuit, forms sensor；
Wherein, first circuit is transmit circuit or receives circuit, and the second circuit is to receive circuit or transmitting electricity
Road.
As an alternative embodiment, first conductive layer is formed in the embodiment of first aspect present invention
In the first surface of the quantum dot film, second conductive layer is formed in the second surface of the substrate, the second surface
It is arranged in the same direction with the first surface, the quantum dot film passes through the optical cement substrate Nian Jie or described with the second circuit
Pass through optical cement and first circuit bonding.
As an alternative embodiment, the substrate is insulating materials in the embodiment of first aspect present invention,
Second conductive layer is silver nanowire.
As an alternative embodiment, first conductive layer is formed in the embodiment of first aspect present invention
In the one side of the quantum dot film, the silver nanowire is formed in the one side of the insulating materials, the insulating materials it is another
Face handles the another side or the first circuit for being adhered to the quantum dot film by press mold.
As an alternative embodiment, first conductive layer passes through in the embodiment of first aspect present invention
Sputter or coating processing are formed in the quantum dot film, and second conductive layer is formed in the base by sputter or coating processing
Material.
As an alternative embodiment, first conductive layer passes through group in first aspect present invention embodiment
The processing of case shifting process forms first circuit, and second conductive layer is handled by pattern transfering process, formation described the
Two circuits.
Second aspect, the embodiment of the invention also discloses it is a kind of using method disclosed in first aspect prepare sensor,
Including quantum dot film and substrate, the quantum dot film be equipped with the first circuit, the substrate be equipped with second circuit, described second
Circuit and first circuit connection.
Wherein, first circuit is transmit circuit or receives circuit, and the second circuit is to receive circuit or transmitting electricity
Road.
As an alternative embodiment, first circuit is set to described in second aspect of the present invention embodiment
The first surface of quantum dot film, the second circuit are set to the second surface of the substrate, the first surface and described second
Surface is arranged in the same direction, and optical cement or the substrate and described the are provided between the quantum dot film and the second circuit
Optical cement is provided between one circuit.
As an alternative embodiment, the substrate is insulating materials, institute in second aspect of the present invention embodiment
The one side that second circuit is set to the insulating materials is stated, first circuit is set to the one side of the quantum dot film, the insulation
The another side of material is set on the another side or first circuit of the quantum dot film.
As an alternative embodiment, the quantum dot film includes from upper in second aspect of the present invention embodiment
The first optical package film, the first barrier layer, quanta point material coating, the second barrier layer and the second light being cascading under
Learn processing encapsulating film.
The embodiment of the invention provides a kind of transducer production method and its sensors, by enclosing on quantum dot film
Then one conductive layer handles the first conductive layer, to form the first circuit on quantum dot film, the second conduction is enclosed on substrate
Layer, then handles the second conductive layer, to form second circuit on substrate, forms biography after being electrically connected the first circuit and second circuit
Sensor.Sensor is prepared using this method, preparation process is simple, and the sensor application being prepared based on above-mentioned preparation method
In touch screen, touch screen color purity, colour rendering, reduction rate and touch screen NTSC color gamut can be improved.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this skill
For the those of ordinary skill of art field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of the transducer production method applied to display equipment disclosed in inventive embodiments one；
Fig. 2 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments three；
Fig. 3 is a kind of structural schematic diagram of the quantum dot film of sensor disclosed in inventive embodiments three；
Fig. 4 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments four；
Fig. 5 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments five；
Fig. 6 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments six；
Fig. 7 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments seven；
Fig. 8 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments eight；
Fig. 9 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments nine；
Figure 10 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments ten；
Figure 11 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments 11；
Figure 12 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments 12；
Figure 13 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments 13；
Figure 14 is a kind of structural schematic diagram of sensor disclosed in inventive embodiments 14.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, to the technical solution of China of the embodiment of the present invention carry out it is clear,
It is fully described by, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, shall fall within the protection scope of the present invention.
It should be noted that the term " includes " of the embodiment of the present invention and " having " and their any deformation, it is intended that
Be to cover it is non-exclusive include, for example, containing the process, method, system, product or equipment of a series of steps or units not
Those of be necessarily limited to be clearly listed step or unit, but may include do not list clearly or for these process, methods,
The other step or units of product or equipment inherently.
The embodiment of the invention discloses a kind of transducer production method and its sensors, and it is pure to can be improved touch screen color
Degree, colour rendering, reduction rate and touch screen NTSC color gamut.It is described in detail below with reference to attached drawing.
Embodiment one
Referring to Fig. 1, a kind of transducer production method flow chart provided for the embodiment of the present invention one.This method include with
Lower step:
S1: quantum dot film is provided
Specifically, the quantum dot film is by the first optical treatment encapsulating film, the first barrier layer, quanta point material coating, second
Barrier layer and the second optical treatment encapsulating film stack gradually to be formed from top to bottom.
Wherein, quantum dot is the nanoparticle that particle diameter only has 2~20nm, since nanoparticle has nano effect,
It can be by carrying out photoelectricity stimulation to quantum dot, so that quantum dot inspires the light of specific frequency according to polished bard.It is specific using these
The light of frequency can get three kinds of Essential colour of red blue green, to can effectively improve color matter when quantum dot is applied to display equipment
Amount.
S2: the first conductive layer is formed on the quantum dot film.
Specifically, first handled the surface of quantum dot film that (such as plasma cleaning, i.e. Plasma or UV ultraviolet light are clear
Wash), improve the adhesive force that quantum dot film surface forms conductive layer, then quantum dot film can by sputter or coating processing, with
Conductive layer is formed on quantum dot film.
Since quantum dot film is unstable under the high temperature conditions, when forming conductive layer on quantum dot film, not can be used
Traditional high temperature sputter or coating processing, but should rigorous concentration conductive layer temperature, realize conductive layer under cryogenic
Formation.In fact, in the present embodiment, which can be selected low-temperature conductive ink, then measured again using low temperature process
Coating forms the conductive layer on son point film.
S3: handling first conductive layer, to form the first circuit on the quantum dot film.
Specifically, pattern transfering process processing can be used in the first conductive layer, to form the first circuit on quantum dot film.
S4: substrate is provided.
Specifically, which can be insulating materials, glass and optical thin film of high score subclass etc..
S5: the second conductive layer is formed on the substrate.
Specifically, substrate can be by sputter or coating processing, to form the second conductive layer on substrate.
S6: second conductive layer is handled, to form second circuit on the substrate.
Specifically, pattern transfering process processing can be used in the second conductive layer, to form second circuit on substrate.
S7: first circuit is connected with the second circuit, forms sensor.
Specifically, the first circuit and second circuit are linked together by way of electrical connection, to form the sensing
Device.
More specifically, first circuit can be transmit circuit or reception circuit, which can be reception circuit or hair
Transmit-receive radio road.
As an alternative embodiment, first conductive layer is formed in the first surface of the quantum dot film, this second
Conductive layer is formed in the second surface of the substrate, which is arranged in the same direction with the first surface, which passes through light
It learns the glue substrate Nian Jie or described with the second circuit and passes through optical cement and first circuit bonding.Specifically, in quantum
Point film first surface on be formed with the first conductive layer, the second conductive layer is formed on the second surface of substrate, to this first
Conductive layer and second conductive layer are handled, to form the first circuit on the first surface of quantum dot film, the of substrate
Second circuit is formed on two surfaces, which is transmit circuit or receives circuit, which is to receive circuit or hair
Then transmit-receive radio road is bonded together quantum dot film and second circuit using optical cement, or using optical cement by substrate and the
One circuit bonding together, is electrically connected the first circuit and second circuit, can form the sensor.
It as another optional embodiment, is the second surface and first table with the difference of above embodiment
Face can be oppositely arranged, the quantum dot film by optical cement and the substrate bonding or first circuit by optical cement and this
Two circuit bondings.Specifically, the first conductive layer is formed in the first surface of quantum dot film, forms second in the second surface of substrate
Conductive layer handles first conductive layer and the second conductive layer, to form the first circuit in the first surface of quantum dot film,
Second circuit is formed in the second surface of substrate, which is transmit circuit or receives circuit, which is to receive
Then circuit or transmit circuit use optical cement by quantum dot film together with substrate bonding, or use optical cement by first
Circuit and second circuit bond together, and similarly, are electrically connected the first circuit and second circuit, can form sensor.
Using above two mode, the transmitting and receiving circuit of the sensor of preparation is spaced apart by optical cement, no
It easily interferes with each other, performance is more stable.
As another optional embodiment, which is insulating materials, which is silver nanowire.Specifically
Silver nanowire is enclosed as conductive layer by sputter or coating processing on the insulating material using insulating materials as substrate in ground.
As another optional embodiment, insulating materials includes the first face and the second face being oppositely arranged, and second leads
Electric layer is formed in the first face of insulating materials, and the second face of insulating materials is handled by press mold is adhered to quantum dot film away from first
The one side of conductive layer is adhered to the first circuit.Specifically, the first conductive layer is formed on quantum dot film, and the second conductive layer is formed
In the first face of insulating materials, the first conductive layer is handled, to form the first circuit on quantum dot film, the first circuit can
For transmit circuit or circuit is received, the second face of insulating materials is then adhered to quantum dot film using press mold by the way of and deviates from the
The one side of one circuit or the first circuit, then the second conductive layer is handled, to form second on the first face of insulating materials
Circuit, second circuit can finally be electrically connected the first circuit and second circuit, can form sensing to receive circuit or transmit circuit
Device.
Using above two mode, the substrate and the second conductive layer for preparing sensor form electrically conducting transparent transfer film, due to
The thinner thickness of the electrically conducting transparent transfer film, about 1~200 μm, so that the sensor thickness being prepared is relatively thin, it can
It is used in the smart machine (such as smartwatch, Intelligent bracelet etc.) of miniaturization or the smart machine of flexible folding.
Preferably, the thickness of the electrically conducting transparent transfer film can be 1 μm, 5 μm, 10 μm, 20 μm, 40 μm, 60 μm, 80 μm, 100
μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm etc..
Embodiment two
Second embodiment of the present invention provides it is a kind of based on the above embodiment one the sensor that is prepared of preparation method.This
The sensor of inventive embodiments two includes quantum dot film and substrate, and quantum dot film is equipped with the first circuit, and substrate is equipped with the
Two circuits, and the first circuit is connect with second circuit, to form the sensor.
Wherein, the first circuit is transmit circuit or receives circuit, and second circuit is to receive circuit or transmit circuit.
Embodiment three
Fig. 2 is referred to, the embodiment of the present invention three provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The sensor that the embodiment of the present invention three provides includes quantum dot film 10 and substrate 30, and quantum dot film 10 is equipped with the first electricity
Road, first circuit are transmit circuit 21, and substrate 30 is equipped with second circuit, which is to receive circuit 41, and emit
Circuit 21 is connect with circuit 41 is received, to form the sensor.Wherein, transmit circuit 21 is set to the first table of quantum dot film 10
Face (not shown) receives the second surface (not shown) that circuit 41 is set to substrate 30, and first surface is arranged in the same direction with second surface,
Optical cement 50 is provided between quantum dot film 10 and second circuit, the first circuit is transmit circuit 21, at this point, second circuit 40 is
Receive circuit 41.Specifically, which is five-layer structure, and transmit circuit 21, optical cement 50, receives circuit at quantum dot film 10
41, substrate 30 is cascading from top to bottom.
It is the structure of quantum dot film provided in an embodiment of the present invention more specifically, referring to Fig. 3.In the present embodiment, should
Quantum dot film 10 includes the first optical treatment encapsulating film 101, the first barrier layer 102, quantum being cascading from top to bottom
Point material coating 103, the second barrier layer 104 and the second optical treatment encapsulating film 105.Specifically, quantum dot be particle diameter only
Have the nanoparticle of 2~20nm, due to nanoparticle have nano effect, can by quantum dot carry out photoelectricity stimulation so that
Quantum dot inspires the light of specific frequency according to polished bard.It can get three kinds of Essential colour of red blue green using the light of these specific frequencies,
When to which quantum dot being applied to display equipment, chromaticity can be effectively improved.
Example IV
Fig. 4 is referred to, the embodiment of the present invention four provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment three are that the first circuit can be to receive circuit 22, at this point, second circuit is transmitting electricity
Road 42.Specifically, which is also five-layer structure, receives circuit 22, quantum dot film 10, optical cement 50, transmit circuit 42, base
Material 30 is cascading from top to bottom.
Embodiment five
Fig. 5 is referred to, the embodiment of the present invention five provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment three are that optical cement 50 is set between substrate 30 and the first circuit, and the first circuit can
For transmit circuit 21, at this point, second circuit is to receive circuit 41.Specifically, the sensor be five-layer structure, receive circuit 41,
Substrate 30, optical cement 50, transmit circuit 21, quantum dot film 10 are cascading from top to bottom.
Embodiment six
Fig. 6 is referred to, the embodiment of the present invention six provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment five are that the first circuit can be to receive circuit 22, at this point, second circuit is transmitting electricity
Road 42.Specifically, which is also five-layer structure, and transmit circuit 42, optical cement 50, receives circuit 22, quantum dot at substrate 30
Film 10 is cascading from top to bottom.
Wherein, the specific structure of quantum dot film 10 refers to embodiment three, and details are not described herein.
Embodiment seven
Fig. 7 is referred to, the embodiment of the present invention seven provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment three are that first surface is oppositely arranged with second surface, quantum dot film 10 and substrate 30
Between be provided with optical cement 50, the first circuit can be transmit circuit 21, at this point, second circuit is to receive circuit 41.Specifically, should
Sensor is five-layer structure, and transmit circuit 21, optical cement 50, substrate 30, receives circuit 41 from top to bottom successively at quantum dot film 10
It is stacked.
Embodiment eight
Fig. 8 is referred to, the embodiment of the present invention eight provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment seven are that the first circuit can be to receive circuit 22, at this point, second circuit is transmitting electricity
Road 42.Specifically, which is also five-layer structure, receives circuit 22, quantum dot film 10, optical cement 50, substrate 30, transmitting electricity
Road 42 is cascading from top to bottom.
Embodiment nine
Fig. 9 is referred to, the embodiment of the present invention nine provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment seven are that optical cement 50 is set between the first circuit and second circuit, the first circuit
It can be transmit circuit 21, at this point, second circuit is to receive circuit 41.Specifically, which is five-layer structure, quantum dot film
10, transmit circuit 21, optical cement 50, reception circuit 41, substrate 30 are cascading from top to bottom.
Embodiment ten
Referring to Figure 10, the embodiment of the present invention ten provides a kind of sensing that the preparation method based on embodiment one is prepared
Device.The present embodiment and the difference of embodiment nine are that the first circuit can be to receive circuit 22, at this point, second circuit is transmitting electricity
Road 42.Specifically, which is also five-layer structure, and quantum dot film 10 receives circuit 22, optical cement 50, transmit circuit 42, base
Material 30 is cascading from top to bottom.
The sensor that above-described embodiment three is prepared to preparation method of one of the embodiment ten based on embodiment one
It has the effect that
The structure of the sensor is five-layer structure, and transmit circuit and reception circuit are separated by optical cement, draws the structure
Line precision is high, touch-control is accurate and strong antijamming capability.Moreover, optical cement plays the role of bonding, make the structure of sensor
More stable, performance is also more stable.
Embodiment 11
Referring to Figure 11, it is prepared for a kind of preparation method based on embodiment one that the embodiment of the present invention 11 provides
Sensor.The sensor that the embodiment of the present invention 11 provides includes quantum dot film 10 and substrate (not shown), the substrate are
Insulating materials 31, quantum dot film 10 are equipped with the first circuit, which is transmit circuit 21, and insulating materials 31 is equipped with the
Two circuits, which is to receive circuit 41, and transmit circuit 21 is connect with circuit 41 is received, to form the sensor.
Specifically, which includes the first face (not shown) being oppositely arranged and the second face (not shown), receives circuit 41 and sets
In the first face of the insulating materials, the second face of insulating materials be connected to quantum dot film 10 away from transmit circuit 21 one side or
It is connected on transmit circuit 21.Specifically, which is four-layer structure, transmit circuit 21, quantum dot film 10, insulating materials
31, circuit 41 is received to be cascading from top to bottom.
Further, the second face of insulating materials can be handled by press mold is adhered to quantum dot film deviates from transmit circuit one
Face is adhered on transmit circuit, in this way, without additional setting optics between insulating materials and quantum dot film or transmit circuit
Glue is bonded, and the integral thickness for reducing the sensor formed is not only contributed to, so that sensor is more lightening.And have
Conducive to bonding process is saved, simplify the preparation flow of sensor.
Further, Fig. 3 is referred to, is the structure of quantum dot film provided in an embodiment of the present invention.In the present embodiment, should
Quantum dot film 10 includes the first optical treatment encapsulating film 101, the first barrier layer 102, quantum being cascading from top to bottom
Point material coating 103, the second barrier layer 104 and the second optical treatment encapsulating film 105.Specifically, quantum dot be particle diameter only
Have the nanoparticle of 2~20nm, due to nanoparticle have nano effect, can by quantum dot carry out photoelectricity stimulation so that
Quantum dot inspires the light of specific frequency according to polished bard.It can get three kinds of Essential colour of red blue green using the light of these specific frequencies,
When to which quantum dot being applied to display equipment, chromaticity can be effectively improved.
Further, silver nanowire is (not shown) by sputter or coating processing, the formed on insulating materials 31
Two conductive layers, the second conductive layer form second circuit by pattern transfering process processing.
Embodiment 12
Referring to Figure 12, the embodiment of the present invention 12 provides a kind of biography that the preparation method based on embodiment one is prepared
Sensor.The present embodiment and the difference of embodiment 11 are that the first circuit can be to receive circuit 22, at this point, second circuit is hair
Transmit-receive radio road 42.Specifically, which is also four-layer structure, receives circuit 22, quantum dot film 10, insulating materials 31, transmitting electricity
Road 42 is cascading from top to bottom.
Embodiment 13
Referring to Figure 13, the embodiment of the present invention 12 provides a kind of biography that the preparation method based on embodiment one is prepared
Sensor.The present embodiment and the difference of embodiment 11 are that the another side of insulating materials 31 is set on the first circuit, the first circuit
It can be transmit circuit 21, at this point, second circuit is to receive circuit 41.Specifically, which is four-layer structure, receives circuit
41, insulating materials 31, transmit circuit 21, quantum dot film 10 are cascading from top to bottom.
Embodiment 14
Referring to Figure 14, the embodiment of the present invention 12 provides a kind of biography that the preparation method based on embodiment one is prepared
Sensor.The present embodiment and the difference of embodiment 11 are that the first circuit can be to receive circuit 22, at this point, second circuit is hair
Transmit-receive radio road 42.Specifically, which is also four-layer structure, and transmit circuit 42, receives circuit 22, quantum dot at insulating materials 31
Film 10 is cascading from top to bottom.
The biography that above-described embodiment 11 is prepared to preparation method of one of the embodiment 14 based on embodiment one
Sensor has the effect that
The substrate of the sensor and the second conductive layer form electrically conducting transparent transfer film, due to the thickness of the electrically conducting transparent transfer film
It spends relatively thin, about 1~200 μm, so that the sensor thickness being prepared is relatively thin, can be used and set in the intelligence of miniaturization
The smart machine of standby (such as smartwatch, Intelligent bracelet etc.) or flexible folding, has used the smart machine of the sensor to have
Good touch-control performance.
Above to a kind of transducer production method and its sensor applied to display equipment disclosed by the embodiments of the present invention
It is described in detail, applying an example herein, principle and implementation of the present invention are described, above embodiments
Explanation be merely used to help understand of the invention a kind of transducer production method and its sensor applied to display equipment and
Its core concept；At the same time, for those skilled in the art in specific embodiment and is answered according to the thought of the present invention
With in range, there will be changes, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (10)
1. a kind of transducer production method, which is characterized in that the described method comprises the following steps:
Quantum dot film is provided；
The first conductive layer is formed on the quantum dot film；
First conductive layer is handled, to form the first circuit on the quantum dot film；
Substrate is provided；
The second conductive layer is formed on the substrate；
Second conductive layer is handled, to form second circuit on the substrate；
First circuit is connected with the second circuit, forms sensor；
Wherein, first circuit is transmit circuit or receives circuit, and the second circuit is to receive circuit or transmit circuit.
2. the method according to claim 1, wherein first conductive layer is formed in the of the quantum dot film
One surface, second conductive layer are formed in the second surface of the substrate, and the second surface and the first surface are in the same direction
Setting, the quantum dot film pass through optical cement and described the by optical cement substrate Nian Jie or described with the second circuit
One circuit bonding.
3. second conductive layer is the method according to claim 1, wherein the substrate is insulating materials
Silver nanowire.
4. according to the method described in claim 3, it is characterized in that, the insulating materials includes the first face being oppositely arranged and
Two faces, second conductive layer are formed in first face of the insulating materials, and second face of the insulating materials is logical
Over-voltage film process is adhered to the quantum dot film away from the one side of first conductive layer or is adhered to first circuit.
5. method according to any one of claims 1 to 4, which is characterized in that first conductive layer passes through sputter or painting
It covers processing and is formed in the quantum dot film, second conductive layer is formed in the substrate by sputter or coating processing.
6. method according to any one of claims 1 to 4, which is characterized in that first conductive layer is shifted by pattern
Process forms first circuit, and second conductive layer is handled by pattern transfering process, forms second electricity
Road.
7. a kind of sensor prepared using method described in claim 1 is applied to display equipment, which is characterized in that described
Sensor includes:
Quantum dot film, the quantum dot film are equipped with the first circuit；And
Substrate, the substrate is equipped with second circuit, and first circuit is connect with the second circuit；
Wherein, first circuit is transmit circuit or receives circuit, and the second circuit is to receive circuit or transmit circuit.
8. sensor according to claim 7 is applied to display equipment, which is characterized in that first circuit is set to institute
State the first surface of quantum dot film, the second circuit is set to the second surface of the substrate, the first surface and described the
Two surfaces are arranged in the same direction, be provided between the quantum dot film and the second circuit optical cement or the substrate with it is described
Optical cement is provided between first circuit.
9. sensor according to claim 7 is applied to display equipment, which is characterized in that the substrate is insulating materials,
The insulating materials includes the first face and the second face being oppositely arranged, and the second circuit is set to described the of the insulating materials
On one side, second face of the insulating materials is connected to the quantum dot film away from the one side of first circuit or is connected to
On first circuit.
10. sensor according to any one of claims 7 to 9 is applied to display equipment, which is characterized in that the quantum
Point film includes the first optical treatment encapsulating film being cascading from top to bottom, the first barrier layer, quanta point material coating, the
Two barrier layers and the second optical treatment encapsulating film.
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| CN201810956423.9A CN109213374A (en) | 2018-08-21 | 2018-08-21 | A kind of transducer production method and its sensor |
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| CN201810956423.9A CN109213374A (en) | 2018-08-21 | 2018-08-21 | A kind of transducer production method and its sensor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130037121A (en) * | 2011-10-05 | 2013-04-15 | 엘지전자 주식회사 | Mobile terminal |
| CN105224138A (en) * | 2015-10-22 | 2016-01-06 | 京东方科技集团股份有限公司 | Suspension touch control display device |
| WO2016182370A1 (en) * | 2015-05-14 | 2016-11-17 | 서울대학교산학협력단 | Wearable quantum dot display device and wearable electronic device comprising same |
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2018
- 2018-08-21 CN CN201810956423.9A patent/CN109213374A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130037121A (en) * | 2011-10-05 | 2013-04-15 | 엘지전자 주식회사 | Mobile terminal |
| WO2016182370A1 (en) * | 2015-05-14 | 2016-11-17 | 서울대학교산학협력단 | Wearable quantum dot display device and wearable electronic device comprising same |
| CN105224138A (en) * | 2015-10-22 | 2016-01-06 | 京东方科技集团股份有限公司 | Suspension touch control display device |
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Application publication date: 20190115 |