CN109208080A - 一种拓扑绝缘体材料的制备方法 - Google Patents

一种拓扑绝缘体材料的制备方法 Download PDF

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CN109208080A
CN109208080A CN201710517726.6A CN201710517726A CN109208080A CN 109208080 A CN109208080 A CN 109208080A CN 201710517726 A CN201710517726 A CN 201710517726A CN 109208080 A CN109208080 A CN 109208080A
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bi2se3
graphene
powder
insulator material
preparation
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赵莉民
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Long Yao Electronic Technology (jiangsu) Co Ltd
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Long Yao Electronic Technology (jiangsu) Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

本发明公开了一种拓扑绝缘体材料的制备方法，包括在蒸发源Bi2Se3粉末中加入Se粉末，蒸发源中加入Se粉末提高了Bi2Se3的结晶质量，有利于Bi2Se3纳米结构的横向生长，而且保证了Se与Bi的原子比例更接近标准值1.4，通过化学气相沉积法在铜箔上生长石墨烯，并用湿法转移石墨烯到SiO2衬底上，利用石墨烯作为缓冲层来合成Bi2Se3。该拓扑绝缘体材料的制备方法因其石墨烯的加入有利于提高Bi2Se3纳米片的结晶质量，而且使Bi2Se3纳米片沿C轴生长的特点更明显，另外，由于石墨烯的加入使Bi2Se3的面内振动峰E2g发生了红移现象。

Description

一种拓扑绝缘体材料的制备方法
技术领域
本发明涉及绝缘新材料技术领域，具体为一种拓扑绝缘体材料的制备方法。
背景技术
现有拓扑绝缘体是一类体内是绝缘态，而表面是由于强自旋轨道耦合作用具有时间反演对称保护金属态的特殊绝缘体，其电子之间“各行其道，互不干扰”避免了电子的无序碰撞造成的电子能量消耗，对解决半导体行业乃至整个信息技术发展有着重要的意义。第二代三维拓扑绝缘体中的Bi2Se3，由于其是纯的化学相；表面态只有一个狄拉克点，是最接近理想状态的强拓扑绝缘体；能隙为0.3eV（等价于3600K），是目前能隙最大的拓扑绝缘体，近几年已经成为了人们关注和研究的焦点。
发明内容
本发明的目的在于提供一种拓扑绝缘体材料的制备方法，以解决上述背景技术中提出的现有的绝缘体材料能量消耗大的问题。
为实现上述目的，本发明提供如下技术方案，一种拓扑绝缘体材料的制备方法，包括在蒸发源Bi2Se3粉末中加入Se粉末，蒸发源中加入Se粉末提高了Bi2Se3的结晶质量，有利于Bi2Se3纳米结构的横向生长，而且保证了Se与Bi的原子比例更接近标准值1.4，通过化学气相沉积法在铜箔上生长石墨烯，并用湿法转移石墨烯到SiO2衬底上，利用石墨烯作为缓冲层来合成Bi2Se3。
优选的，所述蒸发源Bi2Se3粉末中加入Se粉末。
优选的，所述e与Bi的原子比例更接近标准值1.4。
优选的，所述石墨烯作为缓冲层来合成Bi2Se3。
与现有技术相比，本发明的有益效果是：该拓扑绝缘体材料的制备方法因其石墨烯的加入有利于提高Bi2Se3纳米片的结晶质量，而且使Bi2Se3纳米片沿C轴生长的特点更明显，另外，由于石墨烯的加入使Bi2Se3的面内振动峰E2g发生了红移现象。
具体实施方式
下面将结合本发明实施例中的制备工艺，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明提供一种技术方案：一种拓扑绝缘体材料的制备方法，包括在蒸发源Bi2Se3粉末中加入Se粉末，蒸发源中加入Se粉末提高了Bi2Se3的结晶质量，有利于Bi2Se3纳米结构的横向生长，而且保证了Se与Bi的原子比例更接近标准值1.4，通过化学气相沉积法在铜箔上生长石墨烯，并用湿法转移石墨烯到SiO2衬底上。利用石墨烯作为缓冲层来合成Bi2Se3。
尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换,凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (4)

1.一种拓扑绝缘体材料的制备方法，包括在蒸发源Bi2Se3粉末中加入Se粉末，蒸发源中加入Se粉末提高了Bi2Se3的结晶质量，有利于Bi2Se3纳米结构的横向生长，而且保证了Se与Bi的原子比例更接近标准值1.4，通过化学气相沉积法在铜箔上生长石墨烯，并用湿法转移石墨烯到SiO2衬底上，利用石墨烯作为缓冲层来合成Bi2Se3。
2.根据权利要求1所述的一种拓扑绝缘体材料的制备方法，其特征在于：所述的蒸发源Bi2Se3粉末中加入Se粉末。
3.根据权利要求1所述的一种拓扑绝缘体材料的制备方法，其特征在于：所述的e与Bi的原子比例更接近标准值1.4。
4.根据权利要求1所述的一种拓扑绝缘体材料的制备方法，其特征在于：所述的石墨烯作为缓冲层来合成Bi2Se3。
CN201710517726.6A 2017-06-29 2017-06-29 一种拓扑绝缘体材料的制备方法 Withdrawn CN109208080A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111304737A (zh) * 2019-12-03 2020-06-19 中国人民解放军军事科学院国防科技创新研究院 一种合成内禀磁性拓扑绝缘体的方法
CN115505868A (zh) * 2022-10-09 2022-12-23 西南交通大学 溅射沉积Fe(Se,Te)薄膜制备超导带材的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111304737A (zh) * 2019-12-03 2020-06-19 中国人民解放军军事科学院国防科技创新研究院 一种合成内禀磁性拓扑绝缘体的方法
CN111304737B (zh) * 2019-12-03 2021-08-27 中国人民解放军军事科学院国防科技创新研究院 一种合成内禀磁性拓扑绝缘体的方法
CN115505868A (zh) * 2022-10-09 2022-12-23 西南交通大学 溅射沉积Fe(Se,Te)薄膜制备超导带材的方法

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Application publication date: 20190115