CN109208073A - A kind of preparation process of solar energy polycrystalline silicon raw material - Google Patents
A kind of preparation process of solar energy polycrystalline silicon raw material Download PDFInfo
- Publication number
- CN109208073A CN109208073A CN201811428772.XA CN201811428772A CN109208073A CN 109208073 A CN109208073 A CN 109208073A CN 201811428772 A CN201811428772 A CN 201811428772A CN 109208073 A CN109208073 A CN 109208073A
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- China
- Prior art keywords
- polycrystalline silicon
- solar energy
- raw material
- preparation process
- silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of preparation processes of solar energy polycrystalline silicon raw material, raw metal silicon powder is broken, pickling is carried out with refining agent again, it is lifted after being sent into the melting of polysilicon lifting furnace after pickling, stove evacuation facility air-isolation is lifted using polysilicon, improve the lifting furnace crucible rate of climb, the silicon powder separated is placed on progress electric separation separation in electrostatic separator again, polycrystalline silicon material after slightly mentioning enters zone melting furnace, make to form silicon carbide gradient in zone melting furnace, fusing carries out in a vacuum, with heat become method exclude silicon slag impurity, a kind of solar energy polycrystalline silicon raw material preparation process of the present invention, used electric separation technical maturity, it is easy to operate, processing step is few, polysilicon lifting furnace suitable for any pattern, conducive to environmental protection, save the cost, high financial profit.
Description
Technical field
The present invention relates to a kind of preparation processes of solar energy polycrystalline silicon raw material, are related to a kind of production solar polycrystalline silicon material
Technology.
Background technique
Solar photovoltaic technology is one of the important directions in Solar use, at present photovoltaic power generation technology gradually at
Ripe, solar energy power generating application is also flourishing, and still, solar-grade polysilicon raw material supply wretched insufficiency has become
The bottleneck of solar energy power generating application development.
In currently available technology, high energy consumption, high investment, the synonym that low output is produced at solar power silicon material, seriously
Constrain the development of China's solar power silicon raw material production.
Summary of the invention
The technical problem to be solved by the present invention is in view of the deficiencies of the prior art, the present invention provides a kind of solar energy polycrystal
Silicon raw material preparation process, used electric separation technical maturity, easy to operate, processing step is few, the polycrystalline suitable for any pattern
Silicon lifting furnace is conducive to environmental protection, save the cost, high financial profit.
A kind of preparation process of solar energy polycrystalline silicon raw material, raw metal silicon powder is broken, then pickling is carried out with refining agent, acid
It is lifted after being sent into the melting of polysilicon lifting furnace after washing, lifts stove evacuation facility air-isolation using polysilicon, raising mentions
The furnace crucible rate of climb is drawn, the silicon powder separated is placed on progress electric separation separation in electrostatic separator again, more after slightly mentioning
Crystal silicon material enters zone melting furnace, makes to form silicon carbide gradient in zone melting furnace, and fusing carries out in a vacuum, excludes with the heat method that becomes
Silicon slag impurity.
Further refining agent is made of NaNO3, quartz sand, CaCl2 according to the ratio of 5:4:3.
Further polysilicon pull rate is 15-25mm/h.
Further electric separation separation process is that substep carries out.
The further mode for excluding silicon slag impurity uses electrophoretic.
The utility model has the advantages that electric separation technical maturity of the present invention, easy to operate, processing step is few, is suitable for any type
The polysilicon lifting furnace of formula is conducive to environmental protection, save the cost, high financial profit.
Specific embodiment
The present invention is described in further details below by embodiment.
Embodiment 1
A kind of preparation process of solar energy polycrystalline silicon raw material, raw metal silicon powder is broken, then pickling is carried out with refining agent, acid
It is lifted after being sent into the melting of polysilicon lifting furnace after washing, lifts stove evacuation facility air-isolation using polysilicon, raising mentions
The furnace crucible rate of climb is drawn, the silicon powder separated is placed on progress electric separation separation in electrostatic separator again, more after slightly mentioning
Crystal silicon material enters zone melting furnace, makes to form silicon carbide gradient in zone melting furnace, and fusing carries out in a vacuum, excludes with the heat method that becomes
Silicon slag impurity.
The refining agent is made of NaNO3, quartz sand, CaCl2 according to the ratio of 5:4:3.
The polysilicon pull rate is 15mm/h.
The electric separation separation process is that substep carries out.
The mode of the exclusion silicon slag impurity uses electrophoretic.
Embodiment 2
A kind of preparation process of solar energy polycrystalline silicon raw material, raw metal silicon powder is broken, then pickling is carried out with refining agent, acid
It is lifted after being sent into the melting of polysilicon lifting furnace after washing, lifts stove evacuation facility air-isolation using polysilicon, raising mentions
The furnace crucible rate of climb is drawn, the silicon powder separated is placed on progress electric separation separation in electrostatic separator again, more after slightly mentioning
Crystal silicon material enters zone melting furnace, makes to form silicon carbide gradient in zone melting furnace, and fusing carries out in a vacuum, excludes with the heat method that becomes
Silicon slag impurity.
The refining agent is made of NaNO3, quartz sand, CaCl2 according to the ratio of 5:4:3.
The polysilicon pull rate is 20mm/h.
The electric separation separation process is that substep carries out.
The mode of the exclusion silicon slag impurity uses electrophoretic.
Embodiment 3
A kind of preparation process of solar energy polycrystalline silicon raw material, raw metal silicon powder is broken, then pickling is carried out with refining agent, acid
It is lifted after being sent into the melting of polysilicon lifting furnace after washing, lifts stove evacuation facility air-isolation using polysilicon, raising mentions
The furnace crucible rate of climb is drawn, the silicon powder separated is placed on progress electric separation separation in electrostatic separator again, more after slightly mentioning
Crystal silicon material enters zone melting furnace, makes to form silicon carbide gradient in zone melting furnace, and fusing carries out in a vacuum, excludes with the heat method that becomes
Silicon slag impurity.
The refining agent is made of NaNO3, quartz sand, CaCl2 according to the ratio of 5:4:3.
The polysilicon pull rate is 25mm/h.
The electric separation separation process is that substep carries out.
The mode of the exclusion silicon slag impurity uses electrophoretic.
Claims (5)
1. a kind of preparation process of solar energy polycrystalline silicon raw material, which is characterized in that raw metal silicon powder is broken, then with refining agent into
Row pickling is lifted after being sent into the melting of polysilicon lifting furnace after pickling, is isolated using polysilicon lifting stove evacuation facility empty
Gas improves the lifting furnace crucible rate of climb, and the silicon powder separated is placed on progress electric separation separation in electrostatic separator again, through thick
Polycrystalline silicon material after mentioning enters zone melting furnace, makes to form silicon carbide gradient in zone melting furnace, fusing carries out in a vacuum, with heat
The method that becomes excludes silicon slag impurity.
2. a kind of preparation process of solar energy polycrystalline silicon raw material as described in claim 1, which is characterized in that the refining agent by
NaNO3, quartz sand, CaCl2 are formed according to the ratio of 5:4:3.
3. a kind of preparation process of solar energy polycrystalline silicon raw material as described in claim 1, which is characterized in that the polysilicon mentions
Pulling rate degree is 15-25mm/h.
4. a kind of preparation process of solar energy polycrystalline silicon raw material as described in claim 1, which is characterized in that the electric separation separation
Process is that substep carries out.
5. the preparation process of a kind of solar energy polycrystalline silicon raw material according to claim 1, it is characterized in that: the exclusion silicon slag
The mode of impurity uses electrophoretic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811428772.XA CN109208073A (en) | 2018-11-27 | 2018-11-27 | A kind of preparation process of solar energy polycrystalline silicon raw material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811428772.XA CN109208073A (en) | 2018-11-27 | 2018-11-27 | A kind of preparation process of solar energy polycrystalline silicon raw material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109208073A true CN109208073A (en) | 2019-01-15 |
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|---|---|---|---|
| CN201811428772.XA Pending CN109208073A (en) | 2018-11-27 | 2018-11-27 | A kind of preparation process of solar energy polycrystalline silicon raw material |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101054722A (en) * | 2007-05-29 | 2007-10-17 | 晶湛（南昌）科技有限公司 | Purification and preparation method for solar energy polycrystalline silicon raw material |
| CN101122046A (en) * | 2007-05-22 | 2008-02-13 | 晶湛（南昌）科技有限公司 | Low energy consumption purifying and preparing method for polycrystalline silicon raw material |
| CN101240449A (en) * | 2007-11-29 | 2008-08-13 | 晶湛（南昌）科技有限公司 | Method for purifying silicon |
| CN101456558A (en) * | 2007-12-14 | 2009-06-17 | 邹学柏 | Production process of solar polycrystalline silicon material |
| CN101623672A (en) * | 2008-11-26 | 2010-01-13 | 江西赛维Ldk太阳能高科技有限公司 | Method for sorting silicon material mixed with impurities |
| CN102320608A (en) * | 2011-07-14 | 2012-01-18 | 西安华晶电子技术股份有限公司 | A kind of silicon material is purified and is produced with crystal fracture device and breaking method thereof |
| CN102464319A (en) * | 2010-11-18 | 2012-05-23 | 赵钧永 | Metallurgical chemical purification method of silicon |
| CN108726522A (en) * | 2018-05-30 | 2018-11-02 | 云南永昌硅业股份有限公司 | A kind of white residue electoral method effectively improving silicon metal recovery rate |
-
2018
- 2018-11-27 CN CN201811428772.XA patent/CN109208073A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122046A (en) * | 2007-05-22 | 2008-02-13 | 晶湛（南昌）科技有限公司 | Low energy consumption purifying and preparing method for polycrystalline silicon raw material |
| CN101054722A (en) * | 2007-05-29 | 2007-10-17 | 晶湛（南昌）科技有限公司 | Purification and preparation method for solar energy polycrystalline silicon raw material |
| CN101240449A (en) * | 2007-11-29 | 2008-08-13 | 晶湛（南昌）科技有限公司 | Method for purifying silicon |
| CN101456558A (en) * | 2007-12-14 | 2009-06-17 | 邹学柏 | Production process of solar polycrystalline silicon material |
| CN101623672A (en) * | 2008-11-26 | 2010-01-13 | 江西赛维Ldk太阳能高科技有限公司 | Method for sorting silicon material mixed with impurities |
| CN102464319A (en) * | 2010-11-18 | 2012-05-23 | 赵钧永 | Metallurgical chemical purification method of silicon |
| CN102320608A (en) * | 2011-07-14 | 2012-01-18 | 西安华晶电子技术股份有限公司 | A kind of silicon material is purified and is produced with crystal fracture device and breaking method thereof |
| CN108726522A (en) * | 2018-05-30 | 2018-11-02 | 云南永昌硅业股份有限公司 | A kind of white residue electoral method effectively improving silicon metal recovery rate |
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Application publication date: 20190115 |