CN109194319A - PMOS tube driving circuit - Google Patents
PMOS tube driving circuit Download PDFInfo
- Publication number
- CN109194319A CN109194319A CN201810919143.0A CN201810919143A CN109194319A CN 109194319 A CN109194319 A CN 109194319A CN 201810919143 A CN201810919143 A CN 201810919143A CN 109194319 A CN109194319 A CN 109194319A
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- CN
- China
- Prior art keywords
- pmos tube
- voltage
- control circuit
- circuit
- supply voltage
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Amplifiers (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a kind of PMOS tube driving circuits, including triode switch, first control circuit, second control circuit and PMOS tube；The input terminal of the triode switch receives control signal, and output end is connect with an input terminal of the first control circuit and the second control circuit；The output end of the first control circuit and the second control circuit is connect with the input terminal of the PMOS tube, another input terminal is connect with supply voltage；The first control circuit is configured to make the voltage being applied in the PMOS tube be substantially equal to the supply voltage in the case where the supply voltage is low-voltage；The second control circuit is configured to make the voltage being applied in the PMOS tube remain stable in the case where the supply voltage is high voltage.PMOS tube driving circuit of the invention can adapt to the high and low wide variation of supply voltage, the supply voltage range with ultra-wide.
Description
Technical field
The invention belongs to electronic circuit technology field more particularly to a kind of PMOS tube driving circuits.
Background technique
Insulated-gate type field effect transistor, abbreviation metal-oxide-semiconductor is the field effect using input circuit come output control loop
A kind of semiconductor devices of electric current.It not only has the advantages of bipolar junction transistor, and has low in energy consumption, input impedance pole
High, outstanding advantages of noise is low, thermal stability is good, capability of resistance to radiation is strong.Thus, it has a wide range of applications in electronic circuit.
According to the difference of channel material, metal-oxide-semiconductor is divided into PMOS tube and NMOS tube.
Since PMOS tube is a kind of voltage control device, export by gate source voltage VGSControl, and VGSIt is close with supply voltage
Cut phase is closed.General VGSDriving circuit, the electric resistance partial pressure for mostly using triode to control, this is one when mains voltage variations are little
Kind very good solution method.But in the biggish occasion of mains voltage variations, the limitation of electric resistance partial pressure is with regard to obvious.Cause
For, when supply voltage becomes higher, VGSIt inevitably enlarges, even more than PMOS tube VGSSafe voltage.Although many metal-oxide-semiconductors
There is protection voltage-stabiliser tube in inside, but driving voltage is more than the voltage of voltage-stabiliser tube, can cause biggish quiescent dissipation.When supply voltage becomes
When obtaining lower, VGSNecessarily reduce, may cause conducting not enough, thus increase power consumption, even lower than PMOS tube VGSUnlatching electricity
Pressure, PMOS tube is obstructed, leads to former design failure.V is driven using voltage-stabiliser tubeGSCircuit there is a problem of same.The pressure stabilizing of voltage-stabiliser tube
Value is selected lower, although can guarantee that PMOS tube remains to work when supply voltage is lower, since there is always pressures for current-limiting resistance
Drop, limits the lower application environment of supply voltage, and when supply voltage is higher, and biggish power consumption can be brought to circuit.
Summary of the invention
The object of the present invention is to provide a kind of PMOS tube driving circuits, can adapt to the high and low a wide range of change of supply voltage
Change, PMOS tube normally can either be made, and make VGS(gate source voltage) is in safe voltage range always.
One aspect of the present invention provides a kind of PMOS tube driving circuit, including triode switch, first control circuit,
Two control circuits and PMOS tube；The input terminal of the triode switch receives control signal, output end and the first control electricity
Road is connected with an input terminal of the second control circuit；The output of the first control circuit and the second control circuit
End is connect with the input terminal of the PMOS tube, another input terminal is connect with supply voltage；The first control circuit is configured to
In the case where the supply voltage is low-voltage, the voltage being applied in the PMOS tube is made to be substantially equal to the power supply electricity
Pressure；The second control circuit is configured to make to be applied in the PMOS tube in the case where the supply voltage is high voltage
Voltage remain stable.
The PMOS tube driving circuit of aforementioned aspect of the present invention has the supply voltage range of ultra-wide, can be in slightly above PMOS
It works within the scope of the cut-in voltage and drain-source breakdown voltage of pipe.
Detailed description of the invention
Fig. 1 is the functional block diagram of the PMOS tube driving circuit of one embodiment of the present invention.
Fig. 2 is the equivalent circuit that the first control circuit of the PMOS tube driving circuit of one embodiment of the present invention works
Figure.
Fig. 3 is the equivalent circuit that the second control circuit of the PMOS tube driving circuit of one embodiment of the present invention works
Figure.
Fig. 4 is that first control circuit, the second control circuit of the PMOS tube driving circuit of one embodiment of the present invention are comprehensive
The equivalent circuit diagram of cooperation.
Specific embodiment
In order to make those skilled in the art more fully understand technical solution of the present invention, below in conjunction with attached drawing to this hair
Bright specific embodiment is described in further detail.
Fig. 1 is the functional block diagram of the PMOS tube driving circuit of one embodiment of the present invention.As shown in Figure 1, this embodiment party
The PMOS tube driving circuit of formula includes triode switch 1, first control circuit 2 and second control circuit 3 and PMOS tube 4.Three poles
The input terminal of pipe switch 1 receives control signal, an input terminal of output end and first control circuit 2 and second control circuit 3
The output end of connection, first control circuit 2 and second control circuit 3 is connect with the input terminal of PMOS tube 4, another input terminal and
Supply voltage VCCConnection.
Fig. 2 is the equivalent circuit that the first control circuit of the PMOS tube driving circuit of one embodiment of the present invention works
Figure.Fig. 3 is the equivalent circuit diagram that the second control circuit of the PMOS tube driving circuit of one embodiment of the present invention works.Figure
4 be the first control circuit of the PMOS tube driving circuit of one embodiment of the present invention, second control circuit comprehensive function etc.
Imitate circuit diagram.
In Fig. 2-Fig. 4, IN indicates input control signal, and OUT1 indicates the output of first control circuit 2, and OUT2 indicates the
The output of two control circuits 3, VCCIndicate supply voltage.In the present embodiment, PMOS tube 4 is PMOS tube V3, PMOS tube V3's
Input terminal of the grid as PMOS tube 4, source electrode connect supply voltage VCC.Triode switch 1 includes triode V1, the first partial pressure electricity
Hinder R1 and the second divider resistance R2.First divider resistance R1 and the second divider resistance R2 constitutes the bleeder circuit of triode V1, with
Improve the anti-interference ability of triode V1.The base stage of triode V1 passes through bleeder circuit connection control signal IN.
First control circuit 2 includes collector resistance R3, output current limiting resistance R4 and in parallel with output current limiting resistance R4
Capacitor C1, one end of collector resistance R3 connect with the collector of triode V1, and by by output current limiting resistance R4 and
The parallel circuit that capacitor C1 is constituted is connect with the output end OUT1 of first control circuit 2, the other end and supply voltage VCCConnection.
When the end the IN input low level as input terminal, triode V1 is not turned on.When the input high level of the end IN, triode
V1 conducting.At this point, the base current I of triode V1BAnd maximum collector currnt IC(max)It is as follows:
IB=(VIN-0.7)/R1
IC(max)=VCC/R3
Wherein, VINIndicate input terminal voltage, R1, which distinguishes R3, indicates the resistance value of the first divider resistance and collector resistance.
In order to make triode V1 saturation conduction, β I should be madeB> > IC, wherein β indicates the amplification factor of triode.This point
Design suitable R1, R3 can be passed through and choose the triode of larger β value to realize.
The C electrode potential of the triode V1 of saturation conduction, voltage about 0.1V between collector C and emitter E, i.e. V1 is
0.1V.Since the input impedance of PMOS tube V3 is high, output current limiting resistance R4 does not have electric current to flow through, and OUT1 terminal potential is also about
0.1V.The end OUT1 is directly connected with the pole G (grid) of PMOS tube 4, and power source voltage Vcc is applied directly to the pole the S (source of PMOS tube V3
Pole) on, that is to say, that the gate source voltage V of PMOS tube V3 at this timeGS=VG-Vs≈-Vcc.Therefore, pass through first control circuit 2
Control, supply voltage is substantially all to be added in VGSOn, only have portion voltage to be added in V relative to general resistor voltage divider circuitGSOn,
The supply voltage of present embodiment can be much lower.
Second control circuit 3 includes zener diode V2, one end of zener diode V2 and output current limiting resistance R4 and electricity
Hold the parallel circuit connection that C1 is constituted and the output end as second control circuit 3, the other end are connect with power source voltage Vcc.
In the case where triode V1 saturation conduction, if power source voltage Vcc reaches the burning voltage of zener diode V2
(breakdown reverse voltage), then zener diode V2 works, so that no matter how high power source voltage Vcc is, the grid source electricity of PMOS tube V3
Press VGSIt can be maintained near the pressure stabilizing value of diode V2.So that Vcc, in very high situation, PMOS tube V3 remains to normal work
Make, without VGSExcessive the case where causing PMOS tube to be damaged.
Therefore, when power source voltage Vcc is very low (lower than the burning voltage of diode V2), first control circuit 2 works, when
When power source voltage Vcc is very high (more than the burning voltage for reaching diode V2), second control circuit 3 works, so that PMOS tube V3
Gate source voltage VGSTotal energy is greater than cut-in voltage and is lower than safe voltage.
In conclusion the PMOS tube driving circuit of present embodiment has the supply voltage range of ultra-wide, the grid of PMOS tube
The load for the total radio amplifier that pole is made of triode, the output end of total radio amplifier are a kind of doubleway output control knots
Structure.The low-voltage control signals such as+5V level are added in the base stage of triode.When controlling signal is low level, triode shutdown,
G, S interpolar of PMOS tube do not have pressure difference, i.e. VGS=0, PMOS tube is also at off state；When controlling signal is high level, three
Pole pipe conducting, because the output end of total radio amplifier is a kind of doubleway output control structure, when supply voltage is lower, pressure stabilizing
The collector output control of diode composition does not work, and the output control channel constituted in collector resistance all drops in voltage
On, so that G, S voltage of PMOS tube are numerically equal to supply voltage (greater than the cut-in voltage of PMOS tube), PMOS tube conducting.
When supply voltage is higher, the zener diode of the second output control fixes G, S voltage (greater than the cut-in voltage of PMOS tube),
PMOS tube is still connected.The design of this doubleway output control structure, so that PMOS tube energy under conditions of ultra-wide supply voltage
Enough normally-open and shutdown.
That is, in the present embodiment, triode total radio amplifier forms doubleway output control structure, with zener diode
The voltage drop that the pressure stabilizing value or collector resistance of (or voltage-stablizer) generate, control voltage of the combination of the two as PMOS tube,
Reach in supply voltage wider range, control voltage is still able to satisfy PMOS tube VGSIt is required that purpose.
The PMOS tube driving circuit of above embodiment of the invention has the advantages that the supply voltage model of 1, ultra-wide
It encloses, can work within the scope of the cut-in voltage of slightly above PMOS tube and drain-source breakdown voltage；2, structure is simple, small in size, Yi Shi
It is existing, at low cost.
It is above that certain exemplary embodiments of the invention are only described by way of explanation, undoubtedly, for this
The those of ordinary skill in field can use a variety of different modes pair without departing from the spirit and scope of the present invention
Described embodiment is modified.Therefore, above-mentioned attached drawing and description are regarded as illustrative in nature, and should not be construed as to this
The limitation of invention protection scope.
Claims (7)
1. a kind of PMOS tube driving circuit, which is characterized in that including triode switch, first control circuit, second control circuit
And PMOS tube；
The input terminal of the triode switch receives control signal, output end and the first control circuit and second control
One input terminal of circuit connects；
The output end of the first control circuit and the second control circuit is connect with the input terminal of the PMOS tube, another
Input terminal is connect with supply voltage；
The first control circuit is configured to make to be applied in the PMOS tube in the case where the supply voltage is low-voltage
Voltage be substantially equal to the supply voltage；
The second control circuit is configured to make to be applied in the PMOS tube in the case where the supply voltage is high voltage
Voltage remain stable.
2. PMOS tube driving circuit according to claim 1, which is characterized in that
The triode switch includes triode, the first divider resistance and the second divider resistance, first divider resistance and
Two divider resistances constitute the bleeder circuit of the triode, and the base stage of the triode connects the control by the bleeder circuit
Signal processed.
3. PMOS tube driving circuit according to claim 2, which is characterized in that
The first control circuit includes collector resistance, output current limiting resistance and the electricity with the output current limiting resistor coupled in parallel
Hold, one end of the collector resistance connect with the collector of the triode, and by by the output current limiting resistance with
The parallel circuit that the capacitor is constituted is connect with the output end of the first control circuit, and the other end and the supply voltage connect
It connects.
4. PMOS tube driving circuit according to claim 3, which is characterized in that
The second control circuit includes zener diode, and one end of the zener diode connect and makees with the parallel circuit
For the output end of the second control circuit, the other end is connect with the supply voltage.
5. PMOS tube driving circuit according to claim 4, which is characterized in that
The low-voltage refers to the voltage of the burning voltage lower than the zener diode, and the high voltage, which refers to, to be equal to or higher than
The voltage of the burning voltage of the zener diode.
6. PMOS tube driving circuit described in any one of -5 according to claim 1, which is characterized in that
Input terminal of the grid of the PMOS tube as the PMOS tube, source electrode connect the supply voltage.
7. PMOS tube driving circuit described in any one of -6 according to claim 1, which is characterized in that
The control signal is the low-voltage control signal of+5V level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810919143.0A CN109194319B (en) | 2018-08-13 | 2018-08-13 | PMOS tube driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810919143.0A CN109194319B (en) | 2018-08-13 | 2018-08-13 | PMOS tube driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109194319A true CN109194319A (en) | 2019-01-11 |
| CN109194319B CN109194319B (en) | 2022-07-05 |
Family
ID=64921222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810919143.0A Active CN109194319B (en) | 2018-08-13 | 2018-08-13 | PMOS tube driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109194319B (en) |
Citations (9)
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|---|---|---|---|---|
| US20090288907A1 (en) * | 2008-05-23 | 2009-11-26 | Delphi Technologies, Inc. | Electric Power Steering System, Controller, and Method of Operation |
| CN101867168A (en) * | 2010-05-21 | 2010-10-20 | 海洋王照明科技股份有限公司 | Power protecting circuit and LED lamp |
| CN102811531A (en) * | 2011-06-02 | 2012-12-05 | 海洋王照明科技股份有限公司 | Step-down LED driving circuit and lamp |
| US20130301170A1 (en) * | 2012-05-08 | 2013-11-14 | General Electric Company | Systems, methods, and apparatus for voltage clamp circuits |
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| CN205178880U (en) * | 2015-12-08 | 2016-04-20 | 广州市千牧电子有限公司 | Switch control device |
| CN106026338A (en) * | 2016-06-12 | 2016-10-12 | 深圳硕日新能源科技有限公司 | Power supply circuit capable of realizing dormant state of solar controller |
| CN107547070A (en) * | 2017-10-30 | 2018-01-05 | 西安科技大学 | Using the PMOS drive circuit and its design method of active technology of releasing |
| CN107909992A (en) * | 2017-12-04 | 2018-04-13 | 成都星达微科技有限公司 | A kind of campus dormitory active noise reduction system of powered stable |
-
2018
- 2018-08-13 CN CN201810919143.0A patent/CN109194319B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090288907A1 (en) * | 2008-05-23 | 2009-11-26 | Delphi Technologies, Inc. | Electric Power Steering System, Controller, and Method of Operation |
| CN101867168A (en) * | 2010-05-21 | 2010-10-20 | 海洋王照明科技股份有限公司 | Power protecting circuit and LED lamp |
| CN102811531A (en) * | 2011-06-02 | 2012-12-05 | 海洋王照明科技股份有限公司 | Step-down LED driving circuit and lamp |
| US20130301170A1 (en) * | 2012-05-08 | 2013-11-14 | General Electric Company | Systems, methods, and apparatus for voltage clamp circuits |
| CN105182862A (en) * | 2015-10-16 | 2015-12-23 | 郑州源创智控有限公司 | Networked intelligent warehouse status detection control system |
| CN205178880U (en) * | 2015-12-08 | 2016-04-20 | 广州市千牧电子有限公司 | Switch control device |
| CN106026338A (en) * | 2016-06-12 | 2016-10-12 | 深圳硕日新能源科技有限公司 | Power supply circuit capable of realizing dormant state of solar controller |
| CN107547070A (en) * | 2017-10-30 | 2018-01-05 | 西安科技大学 | Using the PMOS drive circuit and its design method of active technology of releasing |
| CN107909992A (en) * | 2017-12-04 | 2018-04-13 | 成都星达微科技有限公司 | A kind of campus dormitory active noise reduction system of powered stable |
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| Title |
|---|
| M. BAFLEUR等: ""Cost-effective smart power CMOS/DMOS technology: design of main driving and protection functions"", 《ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING》 * |
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| Publication number | Publication date |
|---|---|
| CN109194319B (en) | 2022-07-05 |
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Address after: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233030 Patentee after: Anhui North Microelectronics Research Institute Group Co.,Ltd. Address before: No. 2016, Tanghe Road, economic development zone, Bengbu City, Anhui Province 233030 Patentee before: NORTH ELECTRON RESEARCH INSTITUTE ANHUI Co.,Ltd. |