CN109192792A - A method of improving cell piece photoelectric conversion efficiency - Google Patents
A method of improving cell piece photoelectric conversion efficiency Download PDFInfo
- Publication number
- CN109192792A CN109192792A CN201810895848.3A CN201810895848A CN109192792A CN 109192792 A CN109192792 A CN 109192792A CN 201810895848 A CN201810895848 A CN 201810895848A CN 109192792 A CN109192792 A CN 109192792A
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- solder joint
- grid
- thin grid
- cell piece
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims abstract description 69
- 238000003475 lamination Methods 0.000 claims abstract description 25
- 229920006978 SSBR Polymers 0.000 claims description 7
- 239000006071 cream Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000010946 fine silver Substances 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 abstract description 4
- 238000009795 derivation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000005945 translocation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of methods for improving cell piece photoelectric conversion efficiency, including more thin grid laminated batteries piece halftones and stacked wafer moudle, more thin grid laminated batteries piece halftones are made of the first thin grid line, the second thin grid line, front main grid solder joint, front main grid solder joint connecting line, back side main grid solder joint, back side main grid solder joint connecting line, the stacked wafer moudle is by the above more thin grid laminated batteries strings of two strings by being connected in series or in parallel, pass through the derivation of equation and numerical simulation, cell piece equivalent series resistance is reduced, stacked wafer moudle power is promoted；Electric current passes to mode between more thin grid lamination halftones change laminated batteries piece, and main gate line is changed into multiple spot shape from strip, can effectively reduce laminated batteries piece silver paste and be lost, and reduces laminated batteries piece cost, promotes the stacked wafer moudle market competitiveness.
Description
Technical field
The present invention relates to solar battery sheet Module Manufacture Technology fields, and in particular to a kind of raising cell piece photoelectric conversion
The method of efficiency.
Background technique
It in recent years, is raising photovoltaic module generating efficiency and reduction solar battery sheet manufacturing cost, the crystal silicon photovoltaic sun
Gradually multi-line develops energy component, and the main development route of photovoltaic module includes more main grid MBB, lamination, half, high optics at present
The technologies such as gain, wherein stacked wafer moudle is as important one of crystal silicon component development course, have component efficient lighting area it is big,
The features such as high component power and efficiency, high cell piece recovery utilization rate.
Currently, stacked wafer moudle is to be led to the laminated batteries piece that 1/4-1/8 is sliced using conducting resinl by imbrication arrangement mode
It crosses conducting resinl, Sn-coupled SSBR cream or ultra-thin welding stitch welding and claims battery strings, then laminated batteries string is formed by lamination by series-parallel system
The shortcomings that component, existing stacked wafer moudle, is also extremely obvious:
(1) laminated batteries piece parallel units are reduced, and equivalent series resistance is larger, while thin grid line resistance is instead of emitter electricity
Resistance, becomes accounting the best part in lamination equivalent series resistance；
(2) laminated batteries piece silver paste waste is big, cell piece higher cost.
The above two o'clock reduces laminated batteries piece photoelectric conversion efficiency, reduces lamination power, improves cost of manufacture, limits
The development of stacked wafer moudle, reduces the market competitiveness of stacked wafer moudle.
Summary of the invention
To solve the above problems, devising one the invention discloses a kind of method for improving cell piece photoelectric conversion efficiency
Lamination halftone is covered, by the derivation of equation and numerical simulation, cell piece equivalent series resistance is reduced, promotes stacked wafer moudle power；It is more
Electric current passes to mode between thin grid lamination halftone changes laminated batteries piece, and main gate line is changed into multiple spot shape from strip, can effectively subtract
Few laminated batteries piece silver paste is lost, and reduces laminated batteries piece cost, promotes the stacked wafer moudle market competitiveness.
In order to achieve the above objectives, technical scheme is as follows:
A method of cell piece photoelectric conversion efficiency, including more thin grid laminated batteries piece halftones and stacked wafer moudle are improved, it is described
More thin grid laminated batteries piece halftones by the first thin grid line, the second thin grid line, front main grid solder joint, front main grid solder joint connecting line,
Back side main grid solder joint, back side main grid solder joint connecting line composition, the stacked wafer moudle are ganged up by the above more thin grid laminated batteries of two strings
It crosses and is connected in series or in parallel, by changing the parameter in more thin grid lamination equivalent series resistance calculation formula, reach promotion battery
Piece photoelectric conversion efficiency realizes the purpose for improving stacked wafer moudle power.
More thin grid laminated batteries piece halftones of the present invention are applicable to 1/3-1/8 slice laminated batteries piece, how thin grid
How thin grid group described in laminated batteries piece halftone is made of the first thin grid line and the second thin grid line, and the first thin grid line mainly plays electric current
Conveying effect；Second thin grid line mainly plays electric current collecting action.Emitter current is collected by the second thin grid line, thin by first
Grid line is transmitted to front main grid solder joint, and laminated batteries piece back side electric current is transmitted to back side main grid solder joint by Al-BSF, two panels with
Upper laminated batteries piece by be conductively connected medium by the back side main grid solder joint of anter laminated batteries piece and back side main grid connecting line with
Piece laminated batteries piece front main grid solder joint is connected with front main grid solder joint connecting line afterwards, and more than two laminated batteries strings are by going here and there simultaneously
Connection mode forms stacked wafer moudle.
The present invention is divided into different several classes according to function by thin grid line classificationization, by thin grid line, and is taken not according to function
Laminated batteries piece equivalent series resistance is effectively reduced in same thin grid line quantity and size design, improves cell piece photoelectric conversion effect
Rate., can be by the number and width of the thin grid line 1 of change when electrical parameter is consistent, the number and width of thin grid line 2 influence more
The equivalent series resistance Rs and shading-area ratio of thin grid lamination.It can be determined by five-parameter model under different Rs and shading-area ratio
The relative power of cell piece, to choose optimal cell piece halftone design.
Thin grid line 1 several n1, width w1, thin grid line 2 several n2, width w2 tetra- ginsengs are determined by orthogonal experiment method first
Several weighing factor ratios and optimized scope to more thin grid lamination power, after according to weight ratio, successively calculated in optimized scope region
Laminated batteries piece power under the conditions of different thin grid lines passes through the more thin grid laminated batteries pieces of multiple numerical simulation and in detail calculating design
Optimal halftone.
First thin grid line quantitative range is between 5-20 item, preferably between 7-15 item；Width is in the 0.1-1.0 mm, excellent
Select 0.15-0.4mm；Height is between 0.01-0.025mm, preferably 0.01-0.0155mm.
Second thin grid line quantity is between 5-25 item, preferred 10-20 item；Width is between 0.01-0.06mm, preferably
0.015-0.03mm；Height is between 0.01-0.025mm, preferably 0.01-0.0155mm.
Front main grid solder joint and back side main grid solder joint number are equal, and main grid solder joint number is equal to the first thin grid line number, main
Grid solder joint length is greater than the first thin grid line width.
Main gate line is changed into more solder joint shapes, main grid solder joint and main grid solder joint connecting line cross arrangement from strip by the present invention.
Main grid solder joint connecting line is continuously linear, and width range is in 0.1-0.4mm.
Anter lamination is conductively connected medium by continuous shape with rear piece lamination and connects, the optional fine silver of conductive connection medium,
Wicker copper conducting resinl, Sn-coupled SSBR cream or ultra-thin welding.
Anter lamination is conductively connected medium by discontinuous shape with rear piece lamination and connects, and discontinuous shape is conductively connected medium can
Fine silver, wicker copper conducting resinl or Sn-coupled SSBR cream are selected, dispensing or screen printing mode may be selected.
The shape of main grid solder joint is solid formula and hollow type, and hollow type includes rectangular-ambulatory-plane, spacer grid shape, half filling shape.
It is trapezoidal solder joint connecting line or fishbone solder joint connecting line that main grid solder joint, which connects wire shaped,.
The beneficial effects of the present invention are:
1. the present invention is led to using more thin grid (Multi-Finger) technologies by the thin grid line of cell piece according to different function classificationization
Thin grid line of laminated batteries piece etc. is effectively reduced in the positions and dimensions for crossing theoretical calculation and the thin grid line of Numeric simulation design different type
Series resistance is imitated, laminated batteries piece photoelectric conversion efficiency is improved, promotes stacked wafer moudle power.
2. the present invention changes lamination main gate line design pattern, original linear connectivity main gate line is converted into main grid
Solder joint and main grid solder joint connecting line, main grid solder joint, which mainly electrifies, spreads defeated and cell piece bonding effect, and solder joint connecting line is to electric current
Transmitting effect is smaller, mainly plays bonding laminated batteries string, improves assembly reliability.The design improves laminated batteries piece master
Grid line optimizes space, reduces cell piece main gate line part silver paste usage amount, while conducting resinl can be excellent by original continuity dispensing
Intermittence dispensing is turned to, stacked wafer moudle conducting resinl usage amount is reduced, reduces stacked wafer moudle cost, promotes the market competitiveness.
Detailed description of the invention
Fig. 1 is more thin grid laminated batteries piece front electrode schematic diagrames.
Fig. 2 is more thin grid laminated batteries piece rear electrode schematic diagrames.
Fig. 3 is Fig. 1 enlarged fragmentary portion.
Fig. 4 is Fig. 2 enlarged fragmentary portion.
Fig. 5 is 2 or more laminated batteries piece connection types.
Fig. 6 is another laminated batteries piece connection type.
Fig. 7 is selectable hollow out main grid solder joint schematic diagram.
Fig. 8 is selectable continuity solder joint connecting line schematic diagram.
Fig. 9 is selectable noncontinuity solder joint connecting line schematic diagram.
Specific embodiment
With reference to the accompanying drawings and detailed description, the present invention is furture elucidated, it should be understood that following specific embodiments are only
For illustrating the present invention rather than limiting the scope of the invention.
Fig. 1 and Fig. 2 is the mostly thin grid laminated batteries piece front and back screen layout of 1/7 slice single side, and Fig. 5 and Fig. 6 are
Two kinds of conducting medium connection types in embodiment.
Emitter current is collected by the second thin grid line (1-2), is transmitted to front main grid weldering by the first thin grid line (1-1)
Point (1-3), front main grid connecting line (1-4) and back side main grid connecting line (1-6) play bonding cell piece, improve stacked wafer moudle can
By property effect.Laminated batteries piece back side electric current is transmitted to back side main grid solder joint (1-5) by Al-BSF.The above laminated battery of two panels
Pond piece is by being conductively connected medium (1-9 or 1-10) for the back side main grid solder joint and back side main grid of anter laminated batteries piece (1-7)
Connecting line is connected with rear piece laminated batteries piece (1-8) front main grid solder joint and front main grid connecting line, more than two laminated batteries
String forms stacked wafer moudle by series-parallel system.
Fig. 3 is more thin grid MF lamination halftone front detail views, and the first thin grid line (1-1) mainly plays electric current translocation.The
One thin grid line quantitative range is between 5-20 item, preferably between 7-15 item；First thin grid line width selection 0.1-1.0mm it
Between, preferably 0.15-0.4mm；Height is between 0.01-0.025mm, preferably 0.01-0.0155mm.
In embodiment the second thin grid line (1-2) mainly rise electric current collecting action, the second thin grid line quantity between 5-25 item,
It is preferred that 10-20 item；Width is between 0.01-0.06mm, preferably 0.015-0.03mm；Height is excellent between 0.01-0.025mm
Select 0.01-0.0155mm.
Front main grid solder joint (1-3) and the back side main grid solder joint (1-5) number are equal in embodiment, and main grid solder joint number is equal to
First thin grid line number, main grid solder joint length are greater than the first thin grid line width, and main grid solder joint length can be viscous according to laminated batteries string
Ability and the adjustment of stacked wafer moudle reliability are connect, main grid solder joint width is less than laminated batteries string overlapping widths, the overlapping of laminated batteries string
Width range is in 1.2-2.0mm, preferably 1.0-1.4mm.
Main grid solder joint (1-4) connecting line and main grid solder joint cross arrangement in embodiment, main grid solder joint connecting line in embodiment
For continuously linear, width range is in 0.1-0.4mm.It is continuous linear used in removing, there are also trapezoidal, fishbone and other
Noncontinuity solder joint connecting line, solder joint connecting line can also omit in special circumstances.
Fig. 5 is that selectable a kind of laminated batteries connection type in embodiment, anter lamination and rear piece lamination pass through continuously
Shape is conductively connected medium (1-9) connection, and being conductively connected medium may be selected fine silver, wicker copper conducting resinl, Sn-coupled SSBR cream or ultra-thin weldering
Band.
Fig. 6 is the selectable discontinuous laminated batteries connection type of another kind, anter lamination and rear piece lamination in embodiment
It is conductively connected medium (1-10) connection by discontinuous shape, discontinuous shape, which is conductively connected medium, may be selected fine silver, wicker copper conduction
Dispensing or screen printing mode may be selected in glue or Sn-coupled SSBR cream.
Fig. 7 is selectable main grid solder joint design scheme in embodiment, and main grid solder joint is in addition to conventional tubeless formula (1-3), also
It can be designed to hollow type, including rectangular-ambulatory-plane (1-11), spacer grid shape (1-12), half fills shape (1-13), the design of main grid solder joint
Form includes but is not limited to the above shape.
Fig. 8 is other selectable continuity main grid solder joint connecting line modes in embodiment, including trapezoidal solder joint connecting line
(1-14), fishbone solder joint connecting line (1-15), continuity main grid solder joint connecting line includes but is not limited to the above shape.
Fig. 9 is other selectable noncontinuity main grid solder joint connecting line modes in embodiment, including discontinuous trapezoidal weldering
Point connecting line (1-16), discontinuous fishbone solder joint connecting line (1-17), scatterplot shape solder joint connecting line (1-18), no-welding-spot connection
Line (1-19) noncontinuity solder joint connecting line includes but is not limited to the above shape.
The technical means disclosed in the embodiments of the present invention is not limited only to technological means disclosed in above embodiment, further includes
Technical solution consisting of any combination of the above technical features.
Claims (10)
1. a kind of method for improving cell piece photoelectric conversion efficiency, it is characterised in that: including more thin grid laminated batteries piece halftones with
Stacked wafer moudle, more thin grid laminated batteries piece halftones are main by the first thin grid line, the second thin grid line, front main grid solder joint, front
Grid solder joint connecting line, back side main grid solder joint, back side main grid solder joint connecting line composition, the stacked wafer moudle is by the above how thin grid of two strings
Laminated batteries string is by being connected in series or in parallel, by changing the parameter in more thin grid lamination equivalent series resistance calculation formula,
Reach promotion cell piece photoelectric conversion efficiency, realizes the purpose for improving stacked wafer moudle power.
2. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: described mostly thin
Grid laminated batteries piece halftone is suitable for 1/3-1/8 and is sliced laminated batteries piece.
3. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, which is characterized in that by mostly thin
The special halftone of grid laminated batteries piece derives dedicated equivalent series resistance Rs calculation formula, calculates different first thin grid lines, second
Cell piece equivalent series resistance and shading-area ratio under thin grid line parameter calculate different Rs and shading using five parameter computation models
Cell piece theoretical power (horse-power) under area ratio.
4. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: the first thin grid
Line quantitative range between 5-20 item, width in the 0.1-1.0 mm, highly between 0.01-0.025mm.
5. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: the second thin grid
Line number amount is between 5-25 item, and width is between 0.01-0.06mm, highly between 0.01-0.025mm.
6. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: front main grid
Solder joint and back side main grid solder joint number are equal, and main grid solder joint number is equal to the first thin grid line number, and main grid solder joint length is greater than the
One thin grid line width.
7. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: main grid solder joint
Connecting line is continuously linear, and width range is in 0.1-0.4mm.
8. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: anter lamination
It is conductively connected medium by continuous shape with rear lamination to connect, conductive connection medium is fine silver, wicker copper conducting resinl, Sn-coupled SSBR cream
Or ultra-thin welding.
9. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: anter lamination
It is conductively connected medium by discontinuous shape with rear lamination to connect, it is fine silver, wicker copper conduction that discontinuous shape, which is conductively connected medium,
Glue or Sn-coupled SSBR cream or dispensing or silk-screen printing.
10. a kind of method for improving cell piece photoelectric conversion efficiency according to claim 1, it is characterised in that: main grid weldering
The shape of point is solid formula and hollow type, and hollow type includes rectangular-ambulatory-plane, spacer grid shape, half filling shape；The connection of main grid solder joint is linear
Shape is trapezoidal solder joint connecting line or fishbone solder joint connecting line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895848.3A CN109192792A (en) | 2018-08-08 | 2018-08-08 | A method of improving cell piece photoelectric conversion efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895848.3A CN109192792A (en) | 2018-08-08 | 2018-08-08 | A method of improving cell piece photoelectric conversion efficiency |
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| Publication Number | Publication Date |
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| CN109192792A true CN109192792A (en) | 2019-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810895848.3A Pending CN109192792A (en) | 2018-08-08 | 2018-08-08 | A method of improving cell piece photoelectric conversion efficiency |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111775550A (en) * | 2020-06-30 | 2020-10-16 | 晋能清洁能源科技股份公司 | 12BB multi-main grid mesh plate suitable for crystalline silicon battery |
| CN112510101A (en) * | 2020-11-12 | 2021-03-16 | 连云港神舟新能源有限公司 | Lamination subassembly battery piece half tone |
| CN113035987A (en) * | 2021-04-22 | 2021-06-25 | 程晓龙 | Laminated connection structure of efficient laminated assembly and manufacturing method |
| CN113421938A (en) * | 2021-06-10 | 2021-09-21 | 程晓龙 | Solar cell module, efficient laminated curved surface photovoltaic tile and preparation method thereof |
| CN113421939A (en) * | 2021-06-10 | 2021-09-21 | 程晓龙 | Efficient laminated flexible assembly and preparation method thereof |
| WO2023280308A1 (en) * | 2021-07-08 | 2023-01-12 | 天合光能股份有限公司 | Solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111775550A (en) * | 2020-06-30 | 2020-10-16 | 晋能清洁能源科技股份公司 | 12BB multi-main grid mesh plate suitable for crystalline silicon battery |
| CN112510101A (en) * | 2020-11-12 | 2021-03-16 | 连云港神舟新能源有限公司 | Lamination subassembly battery piece half tone |
| CN113035987A (en) * | 2021-04-22 | 2021-06-25 | 程晓龙 | Laminated connection structure of efficient laminated assembly and manufacturing method |
| CN113421938A (en) * | 2021-06-10 | 2021-09-21 | 程晓龙 | Solar cell module, efficient laminated curved surface photovoltaic tile and preparation method thereof |
| CN113421939A (en) * | 2021-06-10 | 2021-09-21 | 程晓龙 | Efficient laminated flexible assembly and preparation method thereof |
| WO2023280308A1 (en) * | 2021-07-08 | 2023-01-12 | 天合光能股份有限公司 | Solar cell |
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Application publication date: 20190111 |