CN109190245B - A kind of method for building up of the MOSFET SPICE model based on LTSPICE software - Google Patents
A kind of method for building up of the MOSFET SPICE model based on LTSPICE software Download PDFInfo
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- CN109190245B CN109190245B CN201811015010.7A CN201811015010A CN109190245B CN 109190245 B CN109190245 B CN 109190245B CN 201811015010 A CN201811015010 A CN 201811015010A CN 109190245 B CN109190245 B CN 109190245B
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- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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Abstract
The method for building up of the invention discloses a kind of SiC MOSFET SPICE model based on LTSPICE software, described method includes following steps: Step 1: SiC MOS is modeled；Step 2: body diode models；Step 3: PCB parasitic parameter models；Step 4: parasitic parameter is calculated by Saber rapid modeling and actual measurement, extract the parameters for establishing the model of SiC MOSFET, SiC MOSFET SPICE model is established in LTspice software based on the parameter of extraction, it provides model with producer by dipulse emulation testing to compare, the correctness of model is established in verifying.Model Architect parameter extraction tool, the MOSFET of present invention combination Saber software divide the methods of part modeling and LTSPICE simulation analysis, establish that a kind of precision is high, versatile SPICE model.
Description
Technical field
The invention belongs to the modeling and simulation fields of new device, are related to a kind of foundation of SiC MOSFET SPICE model
Method.
Background technique
As the core component of Technics of Power Electronic Conversion apparatus system, the basis of Technics of Power Electronic Conversion technology, semiconductor technology
Development be always push Development of Power Electronic Technology key.With the development of SiC material, in high pressure, high temperature, big function
There is apparent advantage, more and more by the favor of researcher under the applications such as rate, high frequency.In actual production, emulation
Efficiency far be higher than actual test, and cost is also lower, this makes emulation become one essential side of scientific research
Method.Comparatively SiC technology belongs to Environment Science, before real system is built, with greater need for the theoretical research emulated.Therefore
The device model for establishing SiC MOSFET has great importance.
Summary of the invention
The foundation side of the object of the present invention is to provide a kind of SiC MOSFET SPICE model based on LTSPICE software
Method divides part modeling and LTSPICE emulation point in conjunction with ModelArchitect parameter extraction tool, the MOSFET of Saber software
The methods of analysis, establishes that a kind of precision is high, versatile SPICE model.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of method for building up of the SiC MOSFET SPICE model based on LTSPICE software, includes the following steps:
Step 1: SiC MOS is modeled: (1) using SaberArchitect parameter extraction tool, extract SiC MOSFET's
Critical data；(2) input-output characteristic, transfer characteristic curve；(3) miller capacitance, the change of input and output capacitors are inputted
Change curve；(4) by the fitting to every curve of SiC device, the characteristic parameter for establishing SPICE model needs is obtained；
Step 2: body diode models: it is modeled with the modeling tool Saber Architect that Saber is carried, point
Not Ni He body diode output characteristics, capacitance characteristic and reverse recovery characteristic curve establish body diode model；
Step 3: PCB parasitic parameter models: driving circuit is equivalent to LC series circuit, when applying excitation to circuit,
Oscillation can be then generated, period of oscillation is f=1/2 π (LC)0.5, with this principle, quickly calculate posting in driving circuit
Raw inductance；Similarly, main load circuit inductance is modeled；
Step 4: parasitic parameter is calculated by Saber rapid modeling and actual measurement, extracts the mould for establishing SiC MOSFET
The parameters of type are established SiC MOSFET SPICE model in LTspice software based on the parameter of extraction, pass through dipulse
Emulation testing provides model with producer and compares, and the correctness of model is established in verifying.
Compared with the prior art, the present invention has the advantage that
1, the method for building up of the invention proposes a kind of SiC MOSFET SPICE model based on LTSPICE software, should
The advantage that the model that method is established has accuracy high, versatile.
2, the PCB parasitic parameter when model established of the present invention considers practical application, can be novel SiC MOSFET
Application and provide simulation theory foundation for building for complication system.
3, research of the invention provides simulation theory by the application to novel SiC MOSFET and for building for complication system
Foundation.
Detailed description of the invention
Fig. 1 is overall structure block diagram of the invention.
Fig. 2 is modeling procedure figure of the invention.
Fig. 3 be SiC MOS modeled segments of the invention, the matched curve of (a) output characteristics, (b) transfer characteristic matched curve,
(c) capacitance characteristic matched curve.
Fig. 4 is body diode modeled segments of the invention, (a) output characteristic curve, and (b) capacitance characteristic curve is (c) reversed
Recovery characteristics curve.
Fig. 5 is the comparison of the present invention with original Correctness of model, and (a) producer model and self-built model drain-source current compare
Figure, (b) producer's model and self-built model drain-source voltage comparison diagram.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawing, and however, it is not limited to this, all to this
Inventive technique scheme is modified or replaced equivalently, and without departing from the range of technical solution of the present invention, should all be covered in this hair
In bright protection scope.
The method for building up of the present invention provides a kind of SiC MOSFET SPICE model based on LTSPICE software, in conjunction with
Model Architect parameter extraction tool, the MOSFET of Saber software divide the side such as part modeling and LTSPICE simulation analysis
Method, establishes that a kind of precision is high, versatile SPICE model.As shown in Figure 1, SiC MOSFET model of the invention is main
Including parts such as the part SiC MOS, body diode part and PCB argument sections, as shown in Figure 2, the specific steps are as follows:
Step 1: SiC MOS modeling.As shown in figure 3, extracting SiC with SaberArchitect parameter extraction tool
The critical data of MOSFET.In order to guarantee the accuracy of MOS model static characteristic, accurate input-output characteristic is needed, transfer is special
Linearity curve.In order to guarantee the accuracy of model dynamic characteristic, miller capacitance is needed to be input correctly, input and output capacitors
Change curve.After inputting these curves, need to be fitted it manually, and Saber have automatic Fitting tool, with point
The method of section linearisation makes to be fitted more accurate.It is available to establish SPICE mould by the fitting to every curve of SiC device
The characteristic parameter that type needs.
Step 2: body diode modeling.As shown in figure 4, with Saber carry modeling tool SaberArchitect into
Row modeling, is fitted the output characteristics of body diode, capacitance characteristic and reverse recovery characteristic curve respectively, can establish body diode
Model.
Step 3: PCB parasitic parameter modeling.Driving circuit is equivalent to LC series circuit, series connection is known in circuit holds
The capacitor of value can then generate oscillation when applying excitation to circuit, and the frequency of oscillation is f=1/2 π (LC)0.5, by capacitor, frequency
Rate brings formula into, we can quickly calculate the parasitic inductance in driving circuit.Similarly, main load circuit is equivalent to LC string
Join circuit, the capacitor for known capacitance of connecting in main load circuit can then generate oscillation when applying excitation to circuit, vibrate
Frequency be f=1/2 π (LC)0.5, by capacitor, frequency brings formula into, we can quickly calculate posting in main load circuit
Raw inductance.
Step 4: parasitic parameter is calculated by Saber rapid modeling and actual measurement, is extracted and establishes SiC MOSFET's
The parameters of model are established SiC MOSFET SPICE model in LTspice software based on the parameter of extraction, pass through double arteries and veins
It rushes emulation testing and producer model is provided and compare, the correctness of model is established in verifying, by Fig. 5 comparing result it is found that double
Under pulse test, the service time of two models, the turn-off time, overshoot voltage, overshoot current is almost overlapped, it is believed that this hair
The model of bright foundation is correct.
Claims (1)
1. a kind of method for building up of the SiC MOSFET SPICE model based on LTSPICE software, it is characterised in that the method
Include the following steps:
Step 1: SiC MOS is modeled: (1) using Saber Architect parameter extraction tool, extract the pass of SiC MOSFET
Key data；(2) input-output characteristic, transfer characteristic curve；(3) miller capacitance, the variation of input and output capacitors are inputted
Curve；(4) by the fitting to every curve of SiC device, the characteristic parameter for establishing 1 model of SPICE needs is obtained；
Step 2: body diode models: being modeled with the modeling tool Saber Architect that Saber is carried, intended respectively
The output characteristics of fit diode, capacitance characteristic and reverse recovery characteristic curve, establish body diode model；
Step 3: PCB parasitic parameter models: driving circuit being equivalent to LC series circuit, known capacitance of connecting in circuit
Capacitor can then generate oscillation, bring capacitor, frequency into formula, calculate posting in driving circuit when applying excitation to circuit
Raw inductance；Main load circuit is equivalent to LC series circuit, the capacitor for known capacitance of connecting in main load circuit, when to circuit
When applying excitation, then oscillation can be generated, capacitor, frequency is brought into formula, calculates the parasitic inductance in main load circuit；
Step 4: parasitic parameter is calculated by Saber rapid modeling and actual measurement, extracts the model for establishing SiC MOSFET
Parameters establish SiC MOSFET SPICE1 model based on the parameter of extraction in LTspice software, imitative by dipulse
True test provides model with producer and compares, and the correctness of model is established in verifying.
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| CN110851772A (en) * | 2019-10-12 | 2020-02-28 | 桂林电子科技大学 | Silicon carbide MOSFET modeling method based on double-pulse test platform |
| CN111368454B (en) * | 2020-03-18 | 2021-11-23 | 哈尔滨工业大学 | SiC MOSFET SPICE model establishment method based on bare chip packaging structure |
| CN112668265B (en) * | 2021-01-05 | 2022-02-08 | 哈尔滨工业大学 | SiC MOSFET SPICE model graphical correction method based on Saber software |
| CN113076712B (en) * | 2021-04-06 | 2022-05-17 | 武汉羿变电气有限公司 | Silicon carbide MOSFET turn-off process modeling method based on double-pulse test |
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| CN106712474A (en) * | 2016-12-16 | 2017-05-24 | 南京航空航天大学 | Anti-reflux dual-power-supply driving circuit applicable to SiC BJT (Bipolar Junction Transistor) and control method thereof |
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| 碳化硅MOSFET行为建模方法;吴宇鹰等;《电力电子技术》;20170930;第51卷(第9期);全文 |
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