CN100576214C - The SPICE model modelling approach of diode multiple simulator format - Google Patents
The SPICE model modelling approach of diode multiple simulator format Download PDFInfo
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- CN100576214C CN100576214C CN200610119557A CN200610119557A CN100576214C CN 100576214 C CN100576214 C CN 100576214C CN 200610119557 A CN200610119557 A CN 200610119557A CN 200610119557 A CN200610119557 A CN 200610119557A CN 100576214 C CN100576214 C CN 100576214C
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Abstract
The invention discloses a kind of SPICE model modelling approach of diode multiple simulator format, the step that comprises is: the diode model parameter extraction that carries out the HSPICE simulator format; The important parameter of HSPICE simulator format is converted to the diode die shape parameter of corresponding SPECTRE simulator format, carries out the diode model parameter extraction in the non-big current injection area territory of SPECTRE simulator format; The model parameter IKP that increases the generation electric current distortion when big electric current injects of diode girth part carries out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format as model parameter; Optimize the numerical value of IKP.The present invention can obtain having the diode SPICE model of simulation result and test data fitness preferably at short notice.
Description
Technical field
The present invention relates to the modeling method field of diode model, especially a kind of SPICE model modelling approach of diode multiple simulator format.
Background technology
Diode is a kind of important semiconductor devices in the SIC (semiconductor integrated circuit), and it is used in the integrated circuit technology field widely.In order to predict the Performance And Reliability of diode component in its residing environment, need carry out emulation to diode.
SPICE (simulation program with integrated circuit emphasis) is for being the circuit simulation program of being developed in 1972 by California, USA university Bai Keli branch school.Subsequently, version is brought in constant renewal in, and function constantly strengthens and be perfect.SPICE was decided to be the American National industrial standard in 1988.It can carry out simulation analysis to numerous components and parts.In the process of extracting diode SPICE model, generally need to extract the model that is applicable to different simulator formats.
Two kinds of simulator formats that present industry member generally adopts are HSPICE and SPECTRE.All there is very big difference in these two kinds of emulators at aspects such as the equivalent electrical circuit of diode model, computing formula, simulation process.
In HSPICE emulator diode SPICE model, have only model parameter of IK to can be used to the characteristic of the big current injection area of match territory distortion electric current.With regard to the HSPICE emulator, its diode SPICE model is when the big current injection area of match territory distortion current characteristics, and capability of fitting has bigger limitation.In SPECTRE emulator diode SPICE model, there are two model parameters of IK and IKP to describe area-type and all elongated diodes characteristic respectively at big current injection area territory distortion electric current.These characteristics have improved the capability of fitting of the diode SPICE model of SPECTRE emulator.
Usually modeling engineering teacher generally takes carry out the extraction of the model parameter of HSPICE and two kinds of simulator formats of SPECTRE respectively independently with a kind of diode.Adopt the SPICE model modelling approach of existing this diode multiple simulator format, although finally can both obtain the fitness between the model emulation and test result preferably respectively, but destroyed compatibility with the model parameter of a kind of model parameter of diode HSPICE simulator format and SPECTRE simulator format to the model parameter of two kinds of simulator formats.Simultaneously, the modeling efficiency of diode also is subjected to bigger influence.
Summary of the invention
Technical matters to be solved by this invention provides a kind of SPICE model modelling approach of diode multiple simulator format, can improve the modeling efficiency of the diode model of different simulator formats, guarantee the compatibility between the diode die shape parameter of different simulator formats.
For solving the problems of the technologies described above, the technical scheme that the SPICE model modelling approach of diode multiple simulator format of the present invention is adopted is, the first step, the diode that needs modeling is carried out the diode model parameter extraction of HSPICE simulator format, extract the saturation current parameter JS of diode area part in the little current injection area of diode territory, the saturation current parameter JSW of diode girth part and the electric current recombination coefficient N of diode, extract the model parameter IK that the electric current distortion takes place when the big electric current of diode injects in the big current injection area of diode territory, and the resistance in series RS of diode, in diode reverse current work zone, extract the voltage breakdown VB of diode and the breakdown current IBV of diode.Second step, important parameter with the HSPICE simulator format: the electric current distortion takes place when injecting the big electric current of saturation current parameter JSW, diode of the saturation current parameter JS of diode area part, diode girth part model parameter IK, voltage breakdown VB, the breakdown current IBV of diode of diode, the electric current recombination coefficient N of diode, the resistance in series RS of diode directly are converted to the diode die shape parameter of corresponding SPECTRE simulator format, carry out the diode model parameter extraction in the non-big current injection area territory of SPECTRE simulator format.The 3rd step, the model parameter IKP that increases the generation electric current distortion when big electric current injects of diode girth part in second step on the SPECTRE emulation form diode die shape parameter basis of extraction carries out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format as model parameter.In the 4th step, the initial value of setting IKP carries out curve fitting, and the data area of curve fitting is dwindled in the big current injection area of diode territory between 0.01 to 100, optimizes the numerical value of IKP.
The SPICE model modelling approach of diode multiple simulator format among the present invention, after the model parameter that obtains diode HSPICE simulator format, increase the model parameter of SPECTRE emulator institute special setting, that is: the model parameter IKP of electric current distortion takes place in diode girth part when big electric current injects, and other all model parameters are all indiscriminately imitated the diode die shape parameter of corresponding HSPICE simulator format.The present invention can obtain having the diode SPICE model of the SPECTRE simulator format of simulation result and test data fitness preferably at short notice.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is a schematic flow sheet of the present invention;
Fig. 2 is an embodiment of the invention schematic flow sheet.
Embodiment
As shown in Figure 1, the SPICE model modelling approach of diode multiple simulator format of the present invention may further comprise the steps: the first step, the diode that needs modeling is carried out the diode model parameter extraction of HSPICE simulator format.And the diode model parameter extraction of this HSPICE simulator format can carry out in two steps: at first, extract the saturation current parameter JS of diode area part, the saturation current parameter JSW of diode girth part and the electric current recombination coefficient N of diode in the little current injection area of diode territory.Secondly, the model parameter IK of electric current distortion and the resistance in series RS of diode when injecting, the big electric current of the big current injection area of diode territory extraction diode take place.Then, in diode reverse current work zone, extract the voltage breakdown VB of diode and the breakdown current IBV of diode.
Second step, important parameter with the HSPICE simulator format that extracts in the first step, comprise: the saturation current parameter JS of diode area part, the saturation current parameter JSW of diode girth part, the model parameter IK of electric current distortion takes place in the big electric current of diode when injecting, the voltage breakdown VB of diode, the breakdown current IBV of diode, the electric current recombination coefficient N of diode, the resistance in series RS of diode directly is converted to the diode die shape parameter of corresponding SPECTRE simulator format, carries out the diode model parameter extraction in the non-big current injection area territory of SPECTRE simulator format.
The 3rd step, the model parameter IKP that increases the generation electric current distortion when big electric current injects of diode girth part in second step on the SPECTRE emulation form diode die shape parameter basis of extraction carries out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format as model parameter.
The 4th step, the numerical value of optimization IKP.When being optimized the numerical steps of IKP, can comprise following step: at first, the initial value of setting IKP is between 0.01 to 100, and the better initial value of IKP is 0.5; Secondly, carry out curve fitting, and the data area of curve fitting is dwindled in the big current injection area of diode territory; At last,, constantly adjust the numerical value of IKP, fit like a glove up to simulation result and measured data from initial value.
As shown in Figure 2, another specific embodiment of SPICE model modelling approach of diode multiple simulator format of the present invention may further comprise the steps:
The first step is carried out the diode model parameter extraction of HSPICE simulator format to the diode that needs modeling.At first, extract the saturation current parameter JS of diode area part, the saturation current parameter JSW of diode girth part and the electric current recombination coefficient N of diode in the little current injection area of diode territory.Secondly, the model parameter IK of electric current distortion and the resistance in series RS of diode when injecting, the big electric current of the big current injection area of diode territory extraction diode take place.Then, in diode reverse current work zone, extract the voltage breakdown VB of diode and the breakdown current IBV of diode.
Second step, important parameter with the HSPICE simulator format that extracts in the first step, comprise: the saturation current parameter JS of diode area part, the saturation current parameter JSW of diode girth part, the model parameter IK of electric current distortion takes place in the big electric current of diode when injecting, the voltage breakdown VB of diode, the breakdown current IBV of diode, the electric current recombination coefficient N of diode, the resistance in series RS of diode directly is converted to the diode die shape parameter of corresponding SPECTRE simulator format, carries out the diode model parameter extraction in the non-big current injection area territory of SPECTRE simulator format.
The 3rd step, the model parameter IKP that increases the generation electric current distortion when big electric current injects of diode girth part in second step on the SPECTRE emulation form diode die shape parameter basis of extraction carries out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format as model parameter.
The 4th step, increase the maximum allowed current IMAX model parameter of the working current IMELT and the assurance simulation accuracy of diode maximum on the diode die shape parameter basis that in the 3rd step, obtains, carry out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format.And the value that the IMELT model parameter is set is 1e30, and the value that the IMAX model parameter is set is 1e30.
In the 5th step, the numerical value of optimization IKP fits like a glove up to simulation result and measured data.
The SPICE model modelling approach of diode multiple simulator format of the present invention, after the model parameter that obtains the HSPICE simulator format, increase the model parameter IKP of SPECTRE emulator institute special setting in big current injection area territory, and optimize this newly-increased model parameter IKP, needn't be to carrying out the extraction of the model parameter of HSPICE and two kinds of simulator formats of SPECTRE respectively independently with a kind of diode, promptly can obtain having the diode SPICE model of the SPECTRE simulator format of simulation result and test data fitness preferably at short notice.
Claims (5)
1, a kind of SPICE model modelling approach of diode multiple simulator format is characterized in that, may further comprise the steps:
The first step, the diode that needs modeling is carried out the diode model parameter extraction of HSPICE simulator format, extract the saturation current parameter JS of diode area part, the saturation current parameter JSW of diode girth part and the electric current recombination coefficient N of diode in the little current injection area of diode territory, extract in the big current injection area of diode territory the model parameter IK of electric current distortion and the resistance in series RS of diode take place when the big electric current of diode injects, in diode reverse current work zone, extract the voltage breakdown VB of diode and the breakdown current IBV of diode;
Second step, important parameter with the HSPICE simulator format: the electric current distortion takes place when injecting the big electric current of saturation current parameter JSW, diode of the saturation current parameter JS of diode area part, diode girth part model parameter IK, voltage breakdown VB, the breakdown current IBV of diode of diode, the electric current recombination coefficient N of diode, the resistance in series RS of diode directly are converted to the diode die shape parameter of corresponding SPECTRE simulator format, carry out the diode model parameter extraction in the non-big current injection area territory of SPECTRE simulator format;
The 3rd step, the model parameter IKP that increases the generation electric current distortion when big electric current injects of diode girth part in second step on the SPECTRE emulation form diode die shape parameter basis of extraction carries out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format as model parameter;
In the 4th step, the initial value of setting IKP carries out curve fitting, and the data area of curve fitting is dwindled in the big current injection area of diode territory between 0.01 to 100, optimizes the numerical value of IKP.
2, the SPICE model modelling approach of diode multiple simulator format as claimed in claim 1, it is characterized in that, the described the 4th goes on foot at the initial value of setting IKP between 0.01 to 100, carry out curve fitting, and the data area of curve fitting dwindled after the big current injection area of diode territory, from initial value, constantly adjust the numerical value of IKP again, fit like a glove up to simulation result and measured data.
3, the SPICE model modelling approach of diode multiple simulator format as claimed in claim 2 is characterized in that, the initial value of the IKP that determines is 0.5.
4, the SPICE model modelling approach of diode multiple simulator format as claimed in claim 1, it is characterized in that, before described the 4th step of the 3rd step back, increase by a step, increase the maximum allowed current IMAX model parameter of the working current IMELT and the assurance simulation accuracy of diode maximum on the diode die shape parameter basis that in the 3rd step, obtains, carry out the diode model parameter extraction in the big current injection area territory of SPECTRE simulator format.
5, the SPICE model modelling approach of diode multiple simulator format as claimed in claim 4, it is characterized in that, the value that the working current IMELT model parameter of diode maximum is set is 1e30, and the value that the maximum allowed current IMAX model parameter that guarantees simulation accuracy is set is 1e30.
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| CN102314529A (en) * | 2010-07-08 | 2012-01-11 | 上海华虹Nec电子有限公司 | Simulation program with integrated circuit emphasis (SPICE) model building method for size reduced process |
| CN101937497A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | Method for protecting SPICE (Simulation Program with Integrated Circuit Emphasis) model IP core |
| CN102044841B (en) * | 2010-11-09 | 2012-08-22 | 山东大学 | Laser diode simulation circuit |
| CN103064994B (en) * | 2011-10-21 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | Diode artificial circuit model |
| CN102651046B (en) * | 2012-04-09 | 2014-04-02 | 佛山华芯微特科技有限公司 | Verifying method and verifying device for electrostatic protection of chip |
| US9501848B2 (en) | 2013-09-03 | 2016-11-22 | Adobe Systems Incorporated | Fitting a parametric curve using maximum curvature |
| CN103870651A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Breakdown voltage TCAD (technology computer aided design) simulation method for semiconductor device |
| US9727987B2 (en) * | 2014-05-12 | 2017-08-08 | Adobe Systems Incorporated | Blending techniques for curve fitting |
| CN105842599B (en) * | 2015-01-12 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of modeling method and precircuit for zener diode |
| CN105389421B (en) * | 2015-10-21 | 2018-11-02 | 国网智能电网研究院 | A kind of simulation model of SiC schottky diode C5D50065D |
| CN109543299B (en) * | 2018-11-22 | 2023-06-16 | 上海华力微电子有限公司 | Interconnect capacitance SPICE modeling method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |