CN109182671A - The high frequency square wave current annealing processing unit of amorphous metal silk - Google Patents
The high frequency square wave current annealing processing unit of amorphous metal silk Download PDFInfo
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- CN109182671A CN109182671A CN201811249003.3A CN201811249003A CN109182671A CN 109182671 A CN109182671 A CN 109182671A CN 201811249003 A CN201811249003 A CN 201811249003A CN 109182671 A CN109182671 A CN 109182671A
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- amorphous metal
- metal silk
- current
- annealing
- square wave
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/04—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering with simultaneous application of supersonic waves, magnetic or electric fields
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
- C21D1/40—Direct resistance heating
Abstract
The high frequency square wave current annealing processing unit of amorphous metal silk, it is related to a kind of current annealing processing unit, in particular to the high frequency square wave current annealing device of a kind of width-adjustable frequency conversion of amorphous metal silk, it is therefore an objective to solve the modulation problems of amorphous wire magnetic property and GMI performance.The high frequency square wave current annealing processing unit of amorphous metal silk of the invention, it includes the modules such as master controller, constant-current source, impedance measuring unit, impulse generator, current monitoring unit.The present invention is for making annealing treatment amorphous metal silk.The improvement of amorphous metal silk magnetic property can be achieved in the present invention and GMI performance improves, and does not easily cause amorphous metal silk surface oxidation and microstructure crystallization, can effectively modulate amorphous metal silk internal stress and domain structure improves its performance and consistency.
Description
Technical field
The present invention relates to a kind of current annealing annealing device, in particular to a kind of width-adjustable frequency conversion of amorphous metal silk
High frequency square wave current annealing device.
Background technique
Amorphous metal silk has good geometrical symmetry, lesser magnetic hysteresis as a kind of soft magnetic materials haveing excellent performance
Loss and coercivity, nearly zero magnetostriction coefficient, high magnetic permeability and special domain structure, especially under higher-frequency excitation
Giant magnetoresistance effect (Giant magneto-impedance, GMI) be substantially better than amorphous band, thin magnetic film and electro-deposition
The other materials such as composite wire material, therefore amorphous metal silk is more suitable for the magnetic susceptible material as GMI magneto-dependent sensor.Amorphous gold
Belonging to the technique that silk uses in the fabrication process has water spinning, Tai Lefa, melt pull method etc., these methods are inevitably being cast
A large amount of residual stress unevenly distributed are generated in state amorphous metal silk, and then affect its domain structure, magnetic property and GMI
Performance indexess and the consistency such as energy.There are the performance indicators such as higher resistance change rate, magnetic responsiveness sensitivity to obtain
Amorphous metal silk adjusts the stress state in amorphous metal silk, it usually needs carries out at corresponding modulation to the performance of amorphous wire
Reason, the method for use have vacuum annealing, magnetic-field annealing, stress annealing, current annealing etc..Current annealing is special because of amorphous metal silk material
The toroidal magnetic field of different " core-shell structure copolymer " domain structure and generation acts on, and is very suitable to the performance modulation of amorphous metal silk.
Currently, current annealing has become one of research hotspot problem, mode is concentrated mainly on DC current annealing, hands over
Flow current annealing and low frequency pulsed current annealing etc..But the magnetic property for the amorphous metal silk that existing current annealing device obtains and
GMI performance fails to reach best.
Summary of the invention
The object of the present invention is to provide a kind of high frequency square wave current annealing device of amorphous metal silk, this device be may be implemented
The modulating action of magnetic property and GMI performance to amorphous metal silk.
The high frequency square wave current annealing processing unit of amorphous metal silk of the invention, it includes master controller, constant-current source, resistance
The modules such as anti-measuring unit, impulse generator, current monitoring unit.
The high frequency square wave current annealing processing unit main performance index of amorphous metal silk:
Annealing electric current: 0 ~ 200mA of peak point current, current regulation fineness 1mA；
Annealing power frequency: 1kHz ~ 2MHz, frequency fineness adjustment 1kHz；
Current duty cycle: 0% ~ 100%, fineness adjustment 1%；
Working time is settable, overtime autostop；
Over-voltage and over-current high temperature automatic protection；
Electrocution-proof protection function；
Running parameter saves function.
The present invention can provide the adjustable high frequency square wave electric current of current parameters for amorphous metal silk and (including amplitude, frequency, account for
Empty ratio, annealing time etc.), while generating high-intensitive toroidal magnetic field, electric current joule heating effect is generated, amorphous metal silk is caused
The change of internal stress state and domain structure.The present invention and other kinds of current annealing, vacuum annealing, stress annealing and magnetic
Field annealing device etc. is compared, have operating process it is simple and it is continuous it is controllable, be able to maintain amorphous metal silk toughness, do not easily cause non-
Brilliant wire crystallization and surface oxidation improve amorphous metal silk consistency of performance and improve its GMI performance and magnetism.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is amorphous wire maximum resistance variation rate (Δ Z/Z0) max with high frequency annealing current amplitude change curve,
Middle horizontal axis is high frequency annealing current amplitude Ip, and the longitudinal axis is maximum resistance variation rate (Δ Z/Z0) max.
Fig. 3 is electrical block diagram of the invention.
Fig. 4 amorphous metal silk impedance variations under different driving frequencies after being high frequency square wave current annealing by parameter optimization
The curve that rate Δ Z/Z0 changes with external magnetic field.Wherein horizontal axis is external magnetic field Hex, and the longitudinal axis is impedance rate of change Δ Z/Z0；Curve 1 is
Impedance rate of change Δ Z/Z when driving frequency is 1MHz0With external magnetic field Hex change curve, 2 be 10MHz when impedance rate of change Δ
Z/Z0Impedance rate of change Δ Z/Z when with the curve that external magnetic field Hex changes, 3 being 30MHz0With the curve that external magnetic field Hex changes, 4 are
Impedance rate of change Δ Z/Z when 50MHz0Impedance rate of change Δ Z/Z when with the curve that external magnetic field Hex changes, 5 being 70MHz0With outer magnetic
The curve of Hex variation, 6 Z/Z of impedance rate of change Δ when being 100MHz0The curve changed with external magnetic field Hex.
Specific embodiment
Specific embodiment one
Embodiment: the annealing electricity of the various different amplitude frequencies needed for being generated by PC control current annealing processing unit
Stream, acts on amorphous wire to be processed.
Specific embodiment two
Embodiment: different high frequency sides are carried out to the amorphous metal silk for using chemical corrosion method removal glass bag coating using the present invention
Then annealing under wave current amplitude tests the impedance behavior of amorphous metal silk, compare maximum resistance variation rate
[ΔZ/Z0] max determines optimum current amplitude.Selected high frequency square wave current amplitude Ip be respectively 70mA, 90mA,
100mA, 110mA, 130mA, 150mA, HF current frequency 10KHz, annealing time 300s, duty ratio 60%.GMI
It can test and show in applying frequency f=70MHz, [the Δ Z/Z of amorphous metal silk0] max is in current amplitude Ip=70mA
430.8%, in Ip=90mA be 290.4%, in Ip=100mA be 340.1%, in Ip=110mA be 490.2%, Ip=
It is 452.3% when 130mA, is 402.7% in Ip=150mA.It is thus determined that Ip=110mA is optimum current amplitude.
Different duty high frequency square wave current annealing is carried out to As-deposited state amorphous metal silk using the present invention to handle, it is then right
The impedance behavior of amorphous metal silk is tested, and maximum resistance variation rate [Δ Z/Z is compared0] max determines optimum taking air ratio.Institute
The duty ratio of selection is 50%, 60%, 70%, 80%, 90%, and high-frequency current amplitude is 110mA, frequency 10KHz, and annealing time is
300s.GMI performance test shows in applying frequency f=70MHz, [the Δ Z/Z of amorphous metal silk0] max is in duty ratio 50%
It is 295.6%, is 490.2% in duty ratio 60%, be 510.4% in duty ratio 70%, is 560.2% in duty ratio 80%,
It is 480.5% when duty ratio 90%.It is thus determined that optimum taking air ratio is 80%.
It carries out different time high frequency square wave current annealing to As-deposited state amorphous metal silk using the present invention to handle, then to non-
The impedance behavior of brilliant wire is tested, and maximum resistance variation rate [Δ Z/Z is compared0] max determines best annealing time.Institute
The annealing time of selection is 300s, 480s, 600s, 780s, 900s, and high-frequency current amplitude is 110mA, duty ratio 80%, frequency
For 10KHz.GMI performance test shows in applying frequency f=70MHz, [the Δ Z/Z of amorphous metal silk0] max is in annealing time
It is 560.2% when 300s, is 581.3% in annealing time 480s, is 508.4% in annealing time 600s, in annealing time
It is 443.7% when 780s, is 366.5% in annealing time 900s.It is thus determined that best annealing time is 480s.
It carries out different frequency high frequency square wave current annealing to As-deposited state amorphous metal silk using the present invention to handle, then to non-
The impedance behavior of brilliant wire is tested, and maximum resistance variation rate [Δ Z/Z is compared0] max determines optimum frequency.It is selected
HF current frequency be 5KHz, 10KHz, 15KHz, 20KHz, high-frequency current amplitude is 110mA, duty ratio 80%, when annealing
Between be 480s.GMI performance test shows in applying frequency f=70MHz, [the Δ Z/Z of amorphous metal silk0] max is in frequency
It is 524.6% when 5KHz, is 581.3% when frequency is 10KHz, is 513.8% in 15KHz, is in frequency 20KHz
483.6%.It is thus determined that most preferably annealing frequency is 10KHz.
The above is only better embodiment of the invention, is not construed as limitation of the scope of the invention, Er Qieben
It invents advocated scope of the claims to be not limited thereto, all personages for being familiar with this field skill, according to presently disclosed
Technology contents, can think easily and equivalence changes, should all fall within the scope of protection of the present invention.
Claims (2)
1. the high frequency square wave current annealing processing unit of amorphous metal silk, feature include master controller, constant-current source, impedance measurement
The modules such as unit, impulse generator, current monitoring unit.
2. the high frequency square wave current annealing processing unit main performance index of amorphous metal silk:
Annealing electric current: 0 ~ 200mA of peak point current, current regulation fineness 1mA；
Annealing power frequency: 1kHz ~ 2MHz, frequency fineness adjustment 1kHz；
Current duty cycle: 0% ~ 100%, fineness adjustment 1%；
Working time is settable, overtime autostop；
Over-voltage and over-current high temperature automatic protection；
Electrocution-proof protection function；
Running parameter saves function.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811249003.3A CN109182671B (en) | 2018-10-25 | 2018-10-25 | High-frequency square wave current annealing treatment device for amorphous metal wires |
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| CN201811249003.3A CN109182671B (en) | 2018-10-25 | 2018-10-25 | High-frequency square wave current annealing treatment device for amorphous metal wires |
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| CN109182671B CN109182671B (en) | 2020-07-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112415447A (en) * | 2020-11-03 | 2021-02-26 | 内蒙古工业大学 | High-frequency magnetic impedance testing device and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102424898A (en) * | 2011-12-16 | 2012-04-25 | 哈尔滨工业大学 | Amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102424898A (en) * | 2011-12-16 | 2012-04-25 | 哈尔滨工业大学 | Amplitude-modulated variable-frequency pulse current annealing treatment device for amorphous metal fibers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112415447A (en) * | 2020-11-03 | 2021-02-26 | 内蒙古工业大学 | High-frequency magnetic impedance testing device and method |
| CN112415447B (en) * | 2020-11-03 | 2023-08-22 | 内蒙古工业大学 | High-frequency magnetic impedance testing device and method |
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| CN109182671B (en) | 2020-07-07 |
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