CN109161849A - A kind of ordered porous array and preparation method thereof of silver tantalum composite material building - Google Patents
A kind of ordered porous array and preparation method thereof of silver tantalum composite material building Download PDFInfo
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- CN109161849A CN109161849A CN201810797632.3A CN201810797632A CN109161849A CN 109161849 A CN109161849 A CN 109161849A CN 201810797632 A CN201810797632 A CN 201810797632A CN 109161849 A CN109161849 A CN 109161849A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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Abstract
The present invention provides a kind of ordered porous array and preparation method thereof of silver-colored tantalum composite material building, using magnetron sputtering deposition silver, tantalum laminated film, under the monocrystalline silicon piece vacuum cleaned up and will deposit chromium film；Then current strength is controlled, accuracy controlling silver, tantalum element deposition rate respectively, maintain chamber reaction pressure, continue sputtering sedimentation, tantalum element blocks the gap that silver is formed during the deposition process, and the ordered porous array of silver-colored tantalum composite material building is formed under silver appropriate, tantalum element deposition rate.With the increase of tantalum deposition rate, the poroid array of film surface can largely be blocked by tantalum element, be further formed more smooth film surface appearance.Silver-colored tantalum composite material ordered porous array preparation process prepared by the present invention is simple, large specific surface area, convenient for large area deposition, it is at low cost, the pollution of film surface reactive organometal compound, it can be widely used in SERS sensing, metal catalytic, nano-probe, photoelectric device, solar battery, the fields such as adsorbent material.
Description
Technical field
The present invention relates to advanced nanocomposite technical field, in particular to a kind of silver-colored tantalum composite material constructs orderly
Porous array and preparation method thereof.
Background technique
Mesoporous material is due to uniform aperture, the property of high-specific surface area, in absorption, separation, catalysis, sensing, energy
Amount conversion etc. is with a wide range of applications.Mesoporous material generally uses solution phase hydro-thermal and solvent evaporation induced self-assembly
Method synthesize.Traditional mesoporous material generally uses template (such as cetyl trimethylammonium bromide, P123 etc.) to carry out
Synthesis.12nm is usually no more than using the mesoporous material aperture that these conventional templates obtain.These methods were prepared mostly
Journey is complicated, is not easy to largely prepare, higher cost, in addition, the mesoporous material surface of these methods preparation be covered with it is a large amount of organic
Compound, the application of serious limitation absorption, separation, catalysis, sensing etc..
Summary of the invention
To solve drawbacks described above existing in the prior art, the purpose of the present invention is to provide a kind of silver-colored tantalum composite material structures
Ordered porous array built and preparation method thereof.Realize that silver-colored tantalum is orderly by silver, tantalum deposition rate in accuracy controlling magnetron sputtering
The preparation of porous array.Ordered porous array prepared by the present invention has unique biomimetic features, big specific surface area, and energy
A large amount of active medicines and molecular dye are loaded, thus is had in fields such as SERS sensing, catalysis, diagnoses and treatment and adsorbent materials
Broad application prospect.And preparation process is simple, the controllability of pattern is high, and prepares convenient for extensive batch.
In order to achieve the above objectives, the invention adopts the following technical scheme:
A kind of preparation method of the ordered porous array of silver tantalum composite material building, comprising the following steps:
1) monocrystalline silicon piece is selected to pre-process as substrate, and before carrying out plated film；
2) in monocrystalline substrate after the pre-treatment, using Ar gas or nitrogen as sputtering atmosphere, electricity is being applied to substrate
Under conditions of pressure, using radio frequency to chromium target carry out magnetron sputtering, on a silicon substrate magnetron sputtering deposit a layer thickness be 100~
The chromium film of 2000nm；
3) Ar gas or nitrogen are applying alive item to the monocrystalline substrate surface for being deposited with chromium film as sputtering atmosphere
Under part, magnetic control co-sputtering is carried out to silver-colored target and included a tantalum target respectively using radio frequency or DC power supply, is adjusted respectively by controlling current strength
Control silver, tantalum element deposition rate form silver-colored tantalum composite material ordered porous array on the silicon substrate for being deposited with chromium film；
4) in situ to carry out x-ray photoelectron spectroscopy detection after the completion of plated film；
5) microstructure and properties detection is carried out.
Preferably, the monocrystalline silicon piece substrate is selected from Si (100), Si (111), SiO2Silicon wafer (Si/SiO2, the thickness of oxide layer
Degree is 300nm) or quartz glass.
Preferably, in the step 1), monocrystalline silicon piece substrate pre-treatment is successively to pass through deionized water, acetone, anhydrous second
Alcohol is respectively cleaned by ultrasonic 10-20min.
Preferably, in the step 2), chromium target purity is 99.99%；Background vacuum is less than or equal to 4 × 10-4Pa。
Preferably, in the step 2), apply the voltage of 60V to monocrystalline substrate, rf frequency is controlled in 250kHz.
Preferably, in the step 3), silver-colored target and included a tantalum target purity are 99.99%；Background vacuum be less than or equal to 4 ×
10-4Pa。
Preferably, it in the step 3), controls silver-colored target and included a tantalum target applies voltage as 60V, 15~60min of sedimentation time；
When the silver-colored target current intensity of control is (1~5) A, silver element deposition rate is (10~30) nm/min；Control included a tantalum target electricity
When intensity of flow is (0.2~1.8) A, tantalum element deposition rate is (1~5) nm/min.
Preferably, the porous array being evenly distributed, bore dia 50-300nm, hole depth 50- are constituted by silver, tantalum element
400nm。
The present invention gives the ordered porous array of the silver-colored tantalum composite material building of above method preparation in turn, including following
The element of mass ratio: silver element 10~90%；Tantalum element 2~70%；Chromium 2~20%.
The ordered porous array of the above-mentioned silver-colored tantalum composite material building of the present invention can be used for drawing in the surface enhanced of organic molecule
Graceful scattering application.
The beneficial effects of the present invention are embodied in:
Combination of this method based on three kinds of technologies: magnetron sputtering technique under (one), vacuum condition；(2), silver element is very fast
Deposition rate and formed have nano gap film characteristic；(3), it the slower deposition rate of tantalum element and can seal
Stifled silver element deposits the gap to be formed, to be further formed orderly porous array.
The present invention uses magnetron sputtering technique, by regulation silver, tantalum element deposition rate, constructs a kind of silver-colored tantalum composite wood
Expect ordered porous array, noble metal composite nano materials of the ordered porous array as a kind of unique structure, since its is special
Hierarchical structure, biggish specific surface area, good catalysis and optical characteristics and excellent surface cleanness, thus in SERS
The fields such as sensing, catalysis, absorption, separation have a wide range of applications.This method is different from conventional solution phase hydro-thermal and solvent and waves
The method of hair induction self assembly.This method is simple, and raw material is easy to get, and can be mass produced with industrialization.Studies have shown that silver-colored tantalum is compound
The ordered porous array of material building can be directly as a kind of SERS substrate of enhancing, the enhancing highly significant of generation.
It is characterized in that:
The method of the present invention realizes the preparation of silver-colored tantalum ordered porous array by accuracy controlling silver, tantalum deposition rate.Tantalum element
Silver element can be blocked during the deposition process and deposits the gap to be formed, to form silver-colored tantalum porous array, the present invention has growth speed
Degree is fast, reliable and easy to operate convenient for large area industrialized production, method, while the porous array density prepared is very high.
The present invention uses the silver-colored tantalum composite material ordered porous array large specific surface area of magnetron sputtering technique deposition, with good
Good chemical stability, can be used as SERS substrate of good performance.
Bore dia prepared by the present invention is 50-300nm, hole depth 50-400nm, and cavernous pattern is capable of providing one
The antenna effect of kind SERS, greatly improves substrate to the detectability of organic molecule, while can repeatedly recycle benefit
With to reduce the production and application cost of SERS substrate.
Detailed description of the invention
Fig. 1 is the stereoscan photograph of the ordered porous array of silver-colored tantalum composite material building；
Fig. 2 is the elemental analysis figure of the ordered porous array of silver-colored tantalum composite material building；
Fig. 3 is that tantalum element deposits the stereoscan photograph that ordered porous array is gradually blocked in very fast situation；
Fig. 4 is that tantalum element largely deposits the stereoscan photograph for forming smooth film surface topography；
Fig. 5 is Raman detection of the ordered porous array SERS substrate to molecule of tantalum composite material building.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples, but is not intended as appointing the present invention
The foundation of what limitation.
The present invention provides a kind of preparation methods of the ordered porous array of silver-colored tantalum composite material building, including following step
It is rapid:
1) select monocrystalline silicon piece as substrate, monocrystalline silicon piece substrate is selected from Si (100), Si (111), SiO2Piece (Si/SiO2,
Oxide layer with a thickness of 300nm) or quartz glass.And it is pre-processed before carrying out plated film；Specially use deionized water, anhydrous second
Alcohol, acetone carry out ultrasonic cleaning 10-20min to monocrystalline silicon sheet surface.
2) monocrystalline substrate after cleaning is sent into magnetic-controlled sputtering coating equipment and carries out the preparation of chromium prime coat, specially adopted
It uses Ar gas or nitrogen as sputtering atmosphere, under conditions of applying 60V voltage to substrate, magnetic control is carried out to chromium target using radio frequency and is splashed
It penetrates, rf frequency is controlled in 250kHz；Magnetron sputtering deposits the chromium film that a layer thickness is 100~2000nm on a silicon substrate；Its
In, chromium target purity is 99.99%；Background vacuum is less than or equal to 4 × 10-4Pa。
3) chromium prime coat preparation finishes, and then carries out silver, tantalum element cosputtering, specially Ar gas or nitrogen are as sputtering gas
Atmosphere under conditions of applying voltage 60V, distinguishes the monocrystalline substrate surface for being deposited with chromium film using radio frequency or DC power supply
Magnetic control co-sputtering is carried out to silver-colored target and included a tantalum target, silver-colored target is controlled and included a tantalum target circuit current ratio is (1~5): (0.2~5) A；When deposition
Between 15~60min, regulate and control silver, tantalum element deposition rate respectively by controlling current strength: control silver-colored target current intensity be (1~
5) when A, silver element deposition rate is (10~30) nm/min；When control included a tantalum target current strength is (0.2~1.8) A, tantalum element is heavy
Product rate is (1~5) nm/min.Silver-colored tantalum composite material ordered porous array is formed on the silicon substrate for being deposited with chromium film；By silver,
Tantalum element constitutes the porous array being evenly distributed, bore dia 50-300nm, hole depth 50-400nm.
Wherein, silver-colored target and included a tantalum target purity are 99.99%；Background vacuum is less than or equal to 4 × 10-4Pa。
4) in situ to carry out x-ray photoelectron spectroscopy detection after the completion of plated film.
5) microstructure and properties detection is carried out.
Specific embodiment is given below to further illustrate the present invention.
Embodiment 1
1) it cleans: by 10min in Si (100) substrate immersion ethyl alcohol, acetone soln, being put into deionized water and impregnate after taking-up
It 5 minutes, then takes out, and is dried up with high pure nitrogen, is put into magnetic-controlled sputtering coating equipment rapidly later.
2) prepared by chromium prime coat: clean monocrystalline silicon surface being carried out the preparation of chromium prime coat, using Ar gas as sputtering gas
Atmosphere applies 60V voltage, carries out magnetron sputtering, rf frequency 250kHz to chromium target using radio frequency；Chromium film with a thickness of 100nm.
3) silver, tantalum deposit: the preparation of chromium prime coat finishes, and then carries out silver, tantalum element cosputtering, wherein application voltage 60V,
Silver-colored target current is 5A, and included a tantalum target electric current is 1.8A, sedimentation time 25min, is deposited on the monocrystalline substrate surface of chromium film and passes through control
Current strength processed regulates and controls silver, tantalum element deposition rate respectively, and when the silver-colored target current intensity of control is 1A, silver element deposition rate is
10nm/min；When control included a tantalum target current strength is 0.2A, tantalum element deposition rate is 2nm/min.
Silver-colored tantalum composite material ordered porous array, porous array are formed on the silicon substrate for being deposited with chromium film, bore dia is
300nm, hole depth 200nm.
The element of the ordered porous array of the silver-colored tantalum composite material building of preparation: silver element 10%；Tantalum element 70%；Chromium member
Element 20%.
Silver-colored tantalum composite material ordered porous array is prepared, as shown in Figure 1.The ordered porous battle array of silver-colored tantalum composite material building
The elemental analysis figure of column is as shown in Figure 2；Raman detection of the ordered porous array SERS substrate of tantalum composite material building to molecule
As shown in Figure 5.
Embodiment 2
1) it cleans: by 10min in Si (111) substrate immersion ethyl alcohol, acetone soln, being put into deionized water and impregnate after taking-up
5min then takes out, and is dried up with high pure nitrogen, is put into magnetic-controlled sputtering coating equipment rapidly later.
2) prepared by chromium prime coat: clean monocrystalline silicon surface being carried out the preparation of chromium prime coat, is employed nitrogen as to sputter gas
Atmosphere applies 60V voltage, carries out magnetron sputtering, rf frequency 250kHz to chromium target using radio frequency；Chromium film with a thickness of 100-
500nm。
3) silver, tantalum deposit: the preparation of chromium prime coat finishes, and then carries out silver, tantalum element cosputtering, wherein application voltage 60V,
Silver-colored target current is 5A, and included a tantalum target electric current is 1A, sedimentation time 25min, is deposited on the monocrystalline substrate surface of chromium film and passes through control
Current strength regulates and controls silver, tantalum element deposition rate respectively, and when the silver-colored target current intensity of control is 3A, silver element deposition rate is
28nm/min；When control included a tantalum target current strength is 1.8A, tantalum element deposition rate is 5nm/min.
Silver-colored tantalum composite material ordered porous array, porous array are formed on the silicon substrate for being deposited with chromium film, bore dia is
50nm, hole depth 400nm.Prepare the element of silver-colored tantalum composite material ordered porous array: silver element 90%；Tantalum element 2%；
Chromium 8%.
Embodiment 3
1) it cleans: by SiO210min in piece substrate immersion ethyl alcohol, acetone soln, is put into deionized water after taking-up and impregnates
5min then takes out, and is dried up with high pure nitrogen, is put into magnetic-controlled sputtering coating equipment rapidly later.
2) prepared by chromium prime coat: clean monocrystalline silicon surface being carried out the preparation of chromium prime coat, using Ar gas as sputtering gas
Atmosphere applies 60V voltage, carries out magnetron sputtering, rf frequency 250kHz to chromium target using radio frequency；Chromium film with a thickness of 300nm, institute
The deposition method for stating chromium film is magnetron sputtering.
3) silver, tantalum deposit: the preparation of chromium prime coat finishes, and then carries out silver, tantalum element cosputtering, wherein application voltage 60V,
Silver-colored target current is 5A, and included a tantalum target electric current is 1.8A, sedimentation time 35min, is deposited on the monocrystalline substrate surface of chromium film and passes through control
Current strength processed regulates and controls silver, tantalum element deposition rate respectively, and when the silver-colored target current intensity of control is 5A, silver element deposition rate is
30nm/min；When control included a tantalum target current strength is 1.0A, tantalum element deposition rate is 3nm/min.
Silver-colored tantalum composite material ordered porous array, porous array are formed on the silicon substrate for being deposited with chromium film, bore dia is
200nm, hole depth 50nm.Prepare the element of silver-colored tantalum composite material ordered porous array: silver element 60%；Tantalum element
38%；Chromium 2%.
Comparative example 1
1) it cleans: by 10 minutes in Si (100) substrate immersion ethyl alcohol, acetone soln, being put into deionized water and soak after taking-up
Bubble 5 minutes, then takes out, and dried up with high pure nitrogen, is put into magnetic-controlled sputtering coating equipment rapidly later.
2) chromium prime coat prepare: by clean monocrystalline silicon surface carry out the preparation of chromium prime coat, chromium film with a thickness of 100-
500nm, the deposition method of the chromium film are magnetron sputtering.
3) silver, tantalum deposition: the preparation of chromium prime coat finishes, and then carries out silver, tantalum element cosputtering, wherein silver-colored target current is
5A, included a tantalum target electric current are 5A, sedimentation time 25min, prepare silver-colored tantalum laminated film, as shown in Figure 3.
Comparative example 2
1) it cleans: by 10min in Si (100) substrate immersion ethyl alcohol, acetone soln, being put into deionized water and impregnate after taking-up
5min then takes out, and is dried up with high pure nitrogen, is put into magnetic-controlled sputtering coating equipment rapidly later.
2) chromium prime coat prepare: by clean monocrystalline silicon surface carry out the preparation of chromium prime coat, chromium film with a thickness of 100-
500nm, the deposition method of the chromium film are magnetron sputtering.
3) silver, tantalum deposition: the preparation of chromium prime coat finishes, and then carries out silver, tantalum element cosputtering, wherein silver-colored target current is
1.8A, included a tantalum target electric current are 5A, sedimentation time 25min, prepare silver-colored tantalum laminated film, as shown in Figure 4.
Limited range of the present invention is not met in silver, tantalum deposition rate by comparing can be seen that above, then cannot be made
The ordered porous array of the standby silver-colored tantalum composite material building of the present invention out.
Silver-colored tantalum composite material ordered porous array prepared by the present invention can be applied to manufacture a variety of nano-sensors, nanometer
Probe, photoelectric device, catalytic reactor part, solar battery, adsorbent material, the especially analysis in the field SERS detection trace
Object can reach the Single Molecule Detection limit, and the advantage and higher detectability on needle point scale are that traditional material can not
Analogy.The ordered porous array of the silver-colored tantalum composite material building of the method for the present invention preparation has big specific surface area, coarse
Degree is not less than 20nm.The ordered porous array of the above-mentioned silver-colored tantalum composite material building of the present invention can be used for the surface in organic molecule and increase
Strong Raman scattering application.
Particular embodiments described above, to the purpose of the present invention, technical scheme and beneficial effects have been carried out further in detail
Describe in detail it is bright, because of understanding, the above is only a specific embodiment of the present invention, is not intended to limit the present invention.It is all this
Within the spirit and principle of invention, any modification, equivalent substitution, improvement and etc. done should be included in protection model of the invention
Within enclosing.
Claims (10)
1. a kind of preparation method of the ordered porous array of silver tantalum composite material building, which comprises the following steps:
1) monocrystalline silicon piece is selected to pre-process as substrate, and before carrying out plated film；
2) alive being applied to substrate using Ar gas or nitrogen as sputtering atmosphere in monocrystalline substrate after the pre-treatment
Under the conditions of, magnetron sputtering is carried out to chromium target using radio frequency, it is 100~2000nm that magnetron sputtering, which deposits a layer thickness, on a silicon substrate
Chromium film；
3) Ar gas or nitrogen are as sputtering atmosphere, to the monocrystalline substrate surface for being deposited with chromium film, under conditions of applying voltage,
Magnetic control co-sputtering is carried out to silver-colored target and included a tantalum target respectively using radio frequency or DC power supply, by control current strength regulate and control respectively silver,
Tantalum element deposition rate forms silver-colored tantalum composite material ordered porous array on the silicon substrate for being deposited with chromium film；
4) in situ to carry out x-ray photoelectron spectroscopy detection after the completion of plated film；
5) microstructure and properties detection is carried out.
2. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, the monocrystalline silicon piece substrate is selected from Si (100), Si (111), SiO2Piece or quartz glass.
3. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, in the step 1), monocrystalline silicon piece substrate pre-treatment is successively clear by deionized water, acetone, each ultrasound of dehydrated alcohol
Wash 10-20min.
4. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, in the step 2), chromium target purity is 99.99%；Background vacuum is less than or equal to 4 × 10-4Pa。
5. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, in the step 2), applies the voltage of 60V to monocrystalline substrate, rf frequency is controlled in 250kHz.
6. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, in the step 3), silver-colored target and included a tantalum target purity are 99.99%；Background vacuum is less than or equal to 4 × 10-4Pa。
7. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, in the step 3), controls silver-colored target and included a tantalum target applies voltage as 60V, 15~60min of sedimentation time；
When the silver-colored target current intensity of control is (1~5) A, silver element deposition rate is (10~30) nm/min；It is strong to control included a tantalum target electric current
When degree is (0.2~1.8) A, tantalum element deposition rate is (1~5) nm/min.
8. a kind of preparation method of the ordered porous array of silver-colored tantalum composite material building according to claim 1, feature
It is, the porous array being evenly distributed, bore dia 50-300nm, hole depth 50-400nm is constituted by silver, tantalum element.
9. a kind of ordered porous array of the silver-colored tantalum composite material building of any one of claim 1-8 the method preparation, special
Sign is, the element including following mass ratioes:
Silver element 10~90%；
Tantalum element 2~70%；
Chromium 2~20%.
10. the Surface enhanced Raman scattering application that a kind of ordered porous array of silver tantalum composite material building is used for organic molecule.
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| CN110629175A (en) * | 2019-08-30 | 2019-12-31 | 西安工程大学 | Plasma porous structure with hot spot structure and preparation method thereof |
| CN110819956A (en) * | 2019-11-04 | 2020-02-21 | 西安交通大学 | Method for improving biocompatibility of Ag micro-nano film and application of Ag micro-nano film |
| CN116688229A (en) * | 2023-07-28 | 2023-09-05 | 北京华钽生物科技开发有限公司 | Tantalum-silver film implanted with medical instrument surface multilayer structure and preparation method thereof |
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| CN116688229A (en) * | 2023-07-28 | 2023-09-05 | 北京华钽生物科技开发有限公司 | Tantalum-silver film implanted with medical instrument surface multilayer structure and preparation method thereof |
| CN116688229B (en) * | 2023-07-28 | 2023-10-24 | 北京华钽生物科技开发有限公司 | Tantalum-silver film implanted with medical instrument surface multilayer structure and preparation method thereof |
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