CN109149340A - It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device - Google Patents
It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device Download PDFInfo
- Publication number
- CN109149340A CN109149340A CN201810932691.7A CN201810932691A CN109149340A CN 109149340 A CN109149340 A CN 109149340A CN 201810932691 A CN201810932691 A CN 201810932691A CN 109149340 A CN109149340 A CN 109149340A
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- Prior art keywords
- transmitance
- coated
- optical film
- laser
- plane mirror
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- 239000007787 solid Substances 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000012788 optical film Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 19
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 229910009372 YVO4 Inorganic materials 0.000 claims 1
- 229910017502 Nd:YVO4 Inorganic materials 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract 6
- 239000000463 material Substances 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
Abstract
The present invention disclose it is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device, including 808.5nm semiconductor laser；The focus lamp of front-back plating 808.5nm anti-reflection film；Front plate 914nm high it is anti-, 808.5,1064 and 1342 nm anti-reflection films, behind plating 914nm high instead, 1064 and 1342 nm anti-reflection film Nd:YVO4；Front plate 914,1064 and 1342 nm anti-reflection films, behind plating 457nm high instead, 914,1064 and 1342 nm anti-reflection film plane mirror；The LBO of front-back plating 914nm and 457nm anti-reflection film；Front plate 914nm high it is anti-, 457,1064 and 1342 nm anti-reflection films, behind 457,1064 and 1342 nm anti-reflection films of plating, 228nm high-reflecting film plane mirror；Front-back plates the BBO of 457 and 228 nm anti-reflection films；Concave surface plates that 457nm high is anti-, 228nm anti-reflection film, plane plating 228nm anti-reflection film concave plane mirror；Central wavelength is 228 ± 5nm optical filter.The arrangement achieves the outputs of 228nm deep ultraviolet all-solid state laser.
Description
Technical field
The present invention relates to all-solid state laser technical field, in particular to a kind of 228nm deep ultraviolet laser generating device.
Background technique
The principle of laser material processing and processing is the absorption based on material and workpiece to laser, eventually leads to laser to material
The destruction of material.The wavelength of laser is shorter, and the energy of a quantum of photon is bigger, and under same absorbing state, laser breaks material
Bad stronger, the material processing of laser and processing are more effective.Moreover, most materials arrive the absorption of laser in visible light
Dark purple outskirt shortens with wavelength and is obviously increased.The laser of same beam quality and spot size, focus point size and wavelength at
Inverse ratio, therefore it is required that more accurate processing, the optical maser wavelength needed is shorter.Here it is field of laser processing constantly pursue it is ultraviolet
And the reason of deep ultraviolet laser.Therefore, deep ultraviolet laser is essential sharp in laser material processing and Precision Machining field
Radiant.Meanwhile deep ultraviolet laser can make laser precision machining range be extended to ceramics, plastics, glass, organic from metal material
Material and biochemical material, semiconductor material, polymer and other special materials etc..
Summary of the invention
It is an object of the invention to propose that a kind of energy generation wavelength is 228nm deep ultraviolet full solid laser device.
It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device, including semiconductor laser diode, focus
Mirror, Nd:YVO4Laser crystal, plane mirror M1, LBO frequency-doubling crystal, plane mirror M2, BBO frequency-doubling crystal, concave plane mirror M3 and optical filtering
Piece.
It is characterized by: semiconductor laser diode output wavelength is 808.5nm, continuous Maximum Power Output is 5W.
Focus lamp front and rear surfaces are coated with the optical film that transmitance at 808.5nm is greater than 99%.
Nd:YVO4Laser crystal front surface be coated at 914nm high reflectance be greater than 99%, 808.5nm, 1064nm and
Transmitance is greater than 95% optical film at 1342nm, and rear surface is coated with transmitance at 914nm and is greater than 99%, 1064nm and 1342nm
Locate the optical film that transmitance is greater than 95%.
Plane mirror M1 front surface is coated with the optical film that transmitance at 914nm, 1064nm and 1342nm is greater than 99%, rear surface
It is coated with high reflectance at 457nm and is greater than the optical film that transmitance at 99%, 914nm, 1064nm and 1342nm is greater than 99%.
LBO frequency-doubling crystal front and rear surfaces are coated with the optical film that transmitance at 914nm and 457nm is greater than 99%.
Plane mirror M2 front surface is coated with high reflectance at 914nm and is greater than transmitance at 99%, 457nm, 1064nm and 1342nm
Optical film greater than 99%, rear surface are coated with transmitance at 457nm, 1064nm and 1342nm and are greater than high reflection at 99%, 228nm
Rate is greater than 98% optical film.
BBO frequency-doubling crystal front and rear surfaces are coated with the optical film that transmitance at 457nm and 228nm is greater than 99%.
Concave plane mirror M3 concave surface is coated with high reflectance at 457nm and is greater than the light that transmitance at 99%, 228nm is greater than 95%
Film is learned, plane surface is coated with the optical film that transmitance at 228nm is greater than 99%.
Filter center wavelength is 228nm ± 5nm, full width at half maximum is 35nm ± 10nm, peak transmittance is greater than 30%, cuts
Stop-band is 350nm to 1150nm.
Detailed description of the invention
Fig. 1 is the device figure of the specific embodiment of the invention.
Specific embodiment
Below with reference to Fig. 1, the present invention is described in more detail.
It is 228nm deep ultraviolet full solid laser device, including 1-808.5nm the invention discloses a kind of energy generation wavelength
Semiconductor laser diode, 2-focus lamps, 3-Nd:YVO4Laser crystal, 4-plane mirror M1,5-LBO frequency-doubling crystals, 6-
Plane mirror M2,7-BBO frequency-doubling crystals, 8-concave plane mirror M3 and 9-optical filters.
The laser of the 808.5nm of 1-808.5nm semiconductor laser diode output is converged to 3-by 2-focus lamps
Nd:YVO4On laser crystal, due to the pumping of 808.5nm laser, 3-Nd:YVO4Laser crystal generate 914nm, 1064nm and
Tri- kinds of laser of 1342nm, from 3-Nd:YVO4Three kinds of 914nm, 1064nm and 1342nm laser that laser crystal comes out pass through preceding table
Face is coated with the optical film that transmitance at 914nm, 1064nm and 1342nm is greater than 99%, and it is big that rear surface is coated with high reflectance at 457nm
4-plane mirror the M1 of optical film of the transmitance greater than 99% at 99%, 914nm, 1064nm and 1342nm；Using front and rear surfaces
It is coated with the 5-LBO frequency-doubling crystals that transmitance at 914nm and 457nm is greater than 99% optical film；It is coated at 914nm using front surface
High reflectance be greater than 99%, 457nm, 1064nm and 1342nm place transmitance greater than 99% optical film, rear surface be coated with 457nm,
Transmitance is greater than the 6-plane mirror M2 that high reflectance at 99%, 228nm is greater than 98% optical film, output at 1064nm and 1342nm
457nm laser；The effect of 4-plane mirror M1 and 6-plane mirror M2 are the resonance for inhibiting 1064nm and two wavelength laser of 1342nm,
Realize the resonance of 914nm laser, the effect of 5-LBO frequency-doubling crystals is to generate 457nm laser to 914nm laser freuqency doubling；457nm swashs
Light is coated with the 7-BBO frequency-doubling crystals that transmitance at 457nm and 228nm is greater than 99% optical film using front and rear surfaces, and 457nm swashs
Light generates 228nm laser by 7-BBO frequency-doubling crystals；228nm laser is coated with high reflectance at 457nm using concave surface
Greater than the optical film that transmitance at 99%, 228nm is greater than 95%, it is recessed that plane surface is coated with 8-of transmitance greater than 99% at 228nm
Plane mirror M3；Finally it is greater than 30% by central wavelength 228nm ± 5nm, full width at half maximum 35nm ± 10nm and peak transmittance, cuts
Stop-band is the 9-optical filters of 350nm to 1150nm, exports 228nm laser.
Claims (1)
1. a kind of energy generation wavelength is 228nm deep ultraviolet full solid laser device characterized by comprising
808.5nm semiconductor laser diode；Front and rear surfaces are coated with the focus lamp that transmitance at 808.5nm is greater than 99% optical film；
Front surface is coated with high reflectance at 914nm and is greater than the optics that transmitance at 99%, 808.5nm, 1064nm and 1342nm is greater than 95%
Film, rear surface are coated with the Nd that transmitance at 914nm is greater than optical film of the transmitance greater than 95% at 99%, 1064nm and 1342nm:
YVO4 laser crystal；Front surface is coated with the optical film that transmitance at 914nm, 1064nm and 1342nm is greater than 99%, and rear surface is coated with
High reflectance is greater than the plane mirror M1 of optical film of the transmitance greater than 99% at 99%, 914nm, 1064nm and 1342nm at 457nm；
Front and rear surfaces are coated with the LBO frequency-doubling crystal that transmitance at 914nm and 457nm is greater than 99% optical film；Front surface is coated at 914nm
High reflectance be greater than 99%, 457nm, 1064nm and 1342nm place transmitance greater than 99% optical film, rear surface be coated with 457nm,
Transmitance is greater than the plane mirror M2 that high reflectance at 99%, 228nm is greater than 98% optical film at 1064nm and 1342nm；Front and rear surfaces
It is coated with the BBO frequency-doubling crystal that transmitance at 457nm and 228nm is greater than 99% optical film；Front surface is coated with high reflectance at 457nm
Greater than the optical film that transmitance at 99%, 228nm is greater than 95%, rear surface is coated with the recessed flat mirror that transmitance at 228nm is greater than 99%
M3；Central wavelength 228nm ± 5nm, full width at half maximum 35nm ± 10nm and peak transmittance are greater than 30%, rejection zone and arrive for 350nm
The optical filter of 1150nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810932691.7A CN109149340A (en) | 2018-08-16 | 2018-08-16 | It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810932691.7A CN109149340A (en) | 2018-08-16 | 2018-08-16 | It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109149340A true CN109149340A (en) | 2019-01-04 |
Family
ID=64789464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810932691.7A Pending CN109149340A (en) | 2018-08-16 | 2018-08-16 | It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109149340A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570277A (en) * | 2012-01-21 | 2012-07-11 | 北京中科协众同益光电科技有限公司 | High-power full-solid ultraviolet laser device |
| CN103001112A (en) * | 2012-07-06 | 2013-03-27 | 中国科学院福建物质结构研究所 | All-solid-state quadruple-harmonic ultraviolet laser |
| CN103151694A (en) * | 2013-02-04 | 2013-06-12 | 中国科学院上海光学精密机械研究所 | Ultraviolet solid-state laser with wavelength of 193 nm |
| CN104600552A (en) * | 2015-02-04 | 2015-05-06 | 厦门大学 | Monocrystalline-diamond continuous wave tunable deep ultraviolet laser |
| CN105071214A (en) * | 2015-09-22 | 2015-11-18 | 山东大学 | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser |
| CN106207732A (en) * | 2015-04-29 | 2016-12-07 | 黑龙江工程学院 | A kind of method that two steps excite continuous wave ultraviolet laser |
| CN208767610U (en) * | 2018-08-16 | 2019-04-19 | 海南师范大学 | It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device |
-
2018
- 2018-08-16 CN CN201810932691.7A patent/CN109149340A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570277A (en) * | 2012-01-21 | 2012-07-11 | 北京中科协众同益光电科技有限公司 | High-power full-solid ultraviolet laser device |
| CN103001112A (en) * | 2012-07-06 | 2013-03-27 | 中国科学院福建物质结构研究所 | All-solid-state quadruple-harmonic ultraviolet laser |
| CN103151694A (en) * | 2013-02-04 | 2013-06-12 | 中国科学院上海光学精密机械研究所 | Ultraviolet solid-state laser with wavelength of 193 nm |
| CN104600552A (en) * | 2015-02-04 | 2015-05-06 | 厦门大学 | Monocrystalline-diamond continuous wave tunable deep ultraviolet laser |
| CN106207732A (en) * | 2015-04-29 | 2016-12-07 | 黑龙江工程学院 | A kind of method that two steps excite continuous wave ultraviolet laser |
| CN105071214A (en) * | 2015-09-22 | 2015-11-18 | 山东大学 | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser |
| CN208767610U (en) * | 2018-08-16 | 2019-04-19 | 海南师范大学 | It is a kind of can generation wavelength be 228nm deep ultraviolet full solid laser device |
Non-Patent Citations (2)
| Title |
|---|
| 卜轶坤, 郑权, 薛庆华, 陈颖新, 钱龙生: "LD泵浦Nd∶YVO_4 457nm蓝光激光器用光学薄膜", 半导体光电, no. 04, pages 1 - 4 * |
| 李景镇: "《光学手册 上》", 陕西出版集团 陕西科学技术出版社, pages: 1307 - 1309 * |
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