CN109148694A - ITO electrode surface method of modifying for flexible perovskite solar battery - Google Patents
ITO electrode surface method of modifying for flexible perovskite solar battery Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 9
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 9
- 229910000765 intermetallic Inorganic materials 0.000 claims description 9
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- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- -1 hafnium nitride Chemical class 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims 1
- 238000012986 modification Methods 0.000 abstract description 11
- 230000004048 modification Effects 0.000 abstract description 11
- 150000002484 inorganic compounds Chemical class 0.000 abstract description 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 47
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000012702 metal oxide precursor Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- 239000002028 Biomass Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZMYGBKXROOQLMY-UHFFFAOYSA-N N=NC=NN.N=NC=NN.C1=CC=CC2=CC=CC=C12 Chemical compound N=NC=NN.N=NC=NN.C1=CC=CC2=CC=CC=C12 ZMYGBKXROOQLMY-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012296 anti-solvent Substances 0.000 description 1
- GNHQSAUHXKRQMC-UHFFFAOYSA-N benzene;chlorine Chemical compound [Cl].C1=CC=CC=C1 GNHQSAUHXKRQMC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 150000002220 fluorenes Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
For the ITO electrode surface method of modifying of flexible perovskite solar battery, it is related to nano material.The cleaning of flexible ITO substrate；The deposition of insulated metal compound.The metal inorganic compound of various insulation is deposited at low temperature using atomic layer deposition method on the surface ITO, the surface ITO has effectively been passivated under the premise of not destroying PEN/ITO substrate, the performance of flexible perovskite solar battery can be significantly improved.Currently without the work modified for the flexibility surface ITO, flexible ITO substrate compound-modified using insulated metal for the first time, operating process is simple, and controllability is high, can deposit various inorganic metal compounds.The photoelectric conversion efficiency of flexible perovskite solar battery after modification significantly improves.
Description
Technical field
The present invention relates to nano materials to improve flexible calcium more particularly, to the compound-modified flexible ITO substrate of insulated metal
The ITO electrode surface method of modifying for flexible perovskite solar battery of titanium ore solar cell photoelectric transfer efficiency.
Background technique
In recent years, with fossil fuel peter out and the aggravation of environmental pollution, people gradually recognize exploitation can
It regenerates, the importance of environmental-friendly new energy.Compared to the new energy such as wind energy, biomass energy, geothermal energy, tide energy, the sun
It can be most abundant and most clean renewable energy on the earth.In order to convert solar energy into electrical energy, people devise various
Solar battery.In novel solar battery, perovskite solar battery is with the cost of material is low, preparation process is simple, effect
The high remarkable advantage of rate, therefore obtained everybody and widely paid close attention to.
Current high performance perovskite solar battery generallys use glass as substrate, but due to substrate of glass quality
It is larger and easily broken therefore not readily portable, limit usage scenario.And substrate of glass is but also perovskite solar energy
Battery can not use continuous roll-to-roll process, limit the further decline of production cost.In order to solve substrate of glass calcium titanium
These limitations of mine solar battery, the perovskite solar battery of flexible substrates come into being.
Flexible perovskite solar battery generallys use plastics or metallic film flexible as substrate.For plastics base
The flexible perovskite solar battery at bottom, people generally use PET (polyethylene terephthalate) or PEN (poly- naphthalene diformazan
Sour glycol ester) it is used as substrate, ITO (tin indium oxide) or FTO (tin oxide of fluorine doped) are being deposited above as electrode ([1]
Liang L S,Huang Z F,Cai L H,Chen W Z,Wang B Z,Chen K W,Bai H,Tian Q Y,and Fan
B.Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode
inter layer for perovskite planar-heterojunction solar cells[J].ACS Applied
Material&Interfaces,2014,6:20585；[2]Docampo P,Ball J M,Darwich M,Eperon G E,
and Snaith H J.Efficient organometal trihalide perovskite planar-
heterojunction solar cells on flexible polymer substrates[J].Nature
Communication.,2013,4:62971)。
Due to flexible identical with structure of the perovskite solar battery of rigidity other than substrate, and report at present
Flexible perovskite solar battery peak efficiency there was only 18.5% ([3] Feng J, Zhu X, Yang Z, et al.Record
efficiency stable flexible perovskite solar cell using effective additive
Assistant strategy [J] .Advanced Materials, 2018:1801418), well below the rigid perovskite sun
([4] National Renewable Energy Laboratory (NREL) .Research of peak efficiency 23.3% of energy battery
Cell efficiency Records.http://www.nrel.gov/ncpv/images/efficiencychart.jpg)。
Therefore improve the ITO quality in flexible substrates, the efficiency for improving flexible perovskite solar battery is of great significance.
Summary of the invention
It is an object of the invention to for existing flexible ITO substrate surface defect is more, surface roughness is big, is difficult to prepare
The disadvantages of high-efficiency flexible perovskite solar battery, provides simple, pervasive, controllable for flexible perovskite solar battery
ITO electrode surface method of modifying.
The present invention the following steps are included:
1) cleaning of flexible ITO substrate；
In step 1), the specific method of the cleaning of the flexibility ITO substrate can are as follows: using the ITO base being deposited on PEN
PEN/ITO substrate is cut, places into container and is cleaned by ultrasonic, is dried for standby as raw material in bottom；Sanction can be used in the cutting
The cutting of paper knife；The ultrasonic cleaning can be used deionized water, ethyl alcohol, isopropanol and successively be cleaned by ultrasonic 20min.
2) deposition of insulated metal compound；
In step 2), the specific method of the deposition of the insulated metal compound can are as follows: by the flexible ITO base after cleaning
Bottom is put into closed atomic layer deposition cavity, after being evacuated to vacuum state, flexible ITO substrate is heated and is reacted；To closed original
N is passed through in sublayer deposition chamber2As the metallic compound presoma of carrier, after continuing 100~500ms, so that metal compound
Object presoma is uniformly attached to ITO substrate surface, then uses N2Closed atomic layer deposition cavity is rinsed well, continues 1
Extra metallic compound presoma is removed after~5s, then is passed through N into closed atomic layer deposition cavity2H as carrier2O
Or plasma N2, after continuing 100~500ms, so that hydrone or plasma nitrogen molecule and being attached to flexible ITO substrate
On metallic compound presoma sufficiently react, form one layer of metallic compound；Then N is reused2By closed atomic layer
Deposition chamber is rinsed well, removes extra hydrone or plasma nitrogen molecule, control loop number after continuing 1~5s
5~10 times, the compound-modified ITO substrate of the insulated metal of different-thickness can be obtained；It is described heating reaction temperature can be
80~110 DEG C；The thickness of the compound-modified ITO substrate of the insulated metal can 0.45~1nm；The insulated metal compound
It can be selected from a kind of in hafnium oxide, hafnium nitride, aluminium nitride etc..
Compared with prior art, the present invention has following remarkable advantage:
The present invention deposits the metal inorganic compounds of various insulation on the surface ITO using atomic layer deposition method at low temperature,
It has effectively been passivated the surface ITO under the premise of not destroying PEN/ITO substrate, flexible perovskite solar-electricity can be significantly improved
The performance in pond.
Currently without the work modified for the flexibility surface ITO, the present invention uses insulated metal compound to repair for the first time
The flexible ITO substrate of decorations, operating process is simple, and controllability is high, can deposit various inorganic metal compounds.After modification
The photoelectric conversion efficiency of flexible perovskite solar battery significantly improves.
Detailed description of the invention
Fig. 1 is flexible perovskite solar battery cross-sectional scans electron microscope.
Fig. 2 is HfO2The flexible perovskite solar battery IV curve in modification front and back.
Fig. 3 is ITO/SnO2With ITO/HfO2/SnO2Device cycle volt-ampere curve.
Fig. 4 is the flexible perovskite solar battery IV curve in HfN modification front and back.
Fig. 5 is the flexible perovskite solar battery IV curve in AlN modification front and back.
Specific embodiment
Following embodiment will the present invention is further illustrated in conjunction with attached drawing.
Embodiment, which is essentially described, modifies the surface ITO using different insulative metallic compound, and prepares in this substrate soft
The specific operation process of property perovskite solar battery.
Embodiment 1
Step 1: the cleaning of flexible ITO substrate
Large stretch of PEN/ITO substrate is cut into the small pieces of 20mm × 20mm using paper knife first, in small on piece rubberizing
Band, ITO electrode part needed for protecting, is etched away extra ITO using zinc powder and hydrochloric acid.Then it is put after being rinsed with water completely
Enter in beaker and 20min is successively cleaned by ultrasonic using deionized water, ethyl alcohol, isopropanol.Then it puts it into baking oven and is dried for standby.
Step 2: HfO2The deposition of (hafnium oxide)
The ITO substrate cleaned up is put into closed atomic layer deposition cavity, it, will be flexible after being evacuated to vacuum state
ITO substrate is heated to 90 DEG C.N is passed through into cavity first2HfO as carrier2Presoma TEMAHf (four (the first and second amidos)
Hafnium), continue 300ms, so that presoma is uniformly attached to ITO substrate surface.Then N is used2Cavity is rinsed well, is continued
3s removes extra metal oxide precursor.Next N is passed through into cavity2H as carrier2O continues 200ms, so that
Hydrone is sufficiently reacted with the metal oxide precursor being attached in flexible ITO substrate, forms one layer of HfO2.Then make again
Use N2Cavity is rinsed well, continues 1500ms, removes extra hydrone.Control loop number, can be obtained different-thickness
HfO2The ITO substrate of modification.Each circulation is with a thickness of 0.1nm.
Step 3: SnO2The spin coating of (tin oxide)
Using solution spin-coating method in HfO2The SnO of surface deposition about 25nm thickness2Layer.
Step 4: the preparation of perovskite
By 1M FAI, 0.2M MABr, 1.1M PbI2With 0.2M PbBr2It is dissolved in the DMF (dimethyl that volume ratio is 3 ︰ 2
Formamide) and DMSO (dimethyl sulfoxide) in the mixed solvent, the DMSO that the CsI of the 1.5M of 88.9 μ l is then added thereto is molten
Liquid.After mixing evenly to solution, filtering obtains perovskite precursor solution, perovskite is deposited using solution spin-coating method, by chlorine
Benzene is as anti-solvent.After spin coating, substrate is put into 100 DEG C of heating 1h on hot plate.
Step 5: the preparation of hole transmission layer
By spiro-OMeTAD (2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell of 72.3mg
Two fluorenes) solid is dissolved in 1ml chlorobenzene solvent, the dense of 28.8 μ l tBP (4- tert .-butylpyridine) and 17.5 μ l is added thereto
Degree is the acetonitrile solution of the Li-TFSI (two (trimethyl fluoride sulfonyl) imine lithiums) of 520mg/ml.It will after stirring evenly and filtering
Above-mentioned solution is spin-coated on perovskite.
Step 6: the vapor deposition of Au electrode
Substrate is put into vapor deposition instrument, the gold of about 80~100nm is deposited, complete perovskite solar-electricity can be obtained
Pond.Flexible perovskite solar battery cross-sectional scans electron microscope is as shown in Figure 1, HfO2The flexible perovskite solar-electricity in modification front and back
Pond IV curve is as shown in Fig. 2, ITO/SnO2With ITO/HfO2/SnO2Device cycle volt-ampere curve is as shown in Figure 3.
Embodiment 2
Step 1: identical as step 1 in embodiment 1.
Step 2: the deposition of HfN (hafnium nitride)
The ITO substrate cleaned up is put into closed atomic layer deposition cavity, it, will be flexible after being evacuated to vacuum state
ITO substrate is heated to 90 DEG C.N is passed through into cavity first2HfN presoma TEMAHf (four (the first and second amidos) as carrier
Hafnium), continue 300ms, so that presoma is uniformly attached to ITO substrate surface.Then N is used2Cavity is rinsed well, is continued
3s removes extra metal nitride presoma.Plasma N is passed through into cavity again2, continue 200ms, so that N2Molecule with
The metal nitride presoma being attached in flexible ITO substrate sufficiently reacts, and forms one layer of HfN.Then reuse N2By chamber
Body is rinsed well, is continued 1500ms, is removed extra hydrone.The HfN modification of different-thickness can be obtained in control loop number
ITO substrate.Each circulation is with a thickness of 0.1nm.
Step 3: four, five, six: in embodiment 1 Step 3: four, five, six is identical.The flexible perovskite in HfN modification front and back
Solar battery IV curve is as shown in Figure 4.
Embodiment 3
Step 1: identical as step 1 in embodiment 1.
Step 2: the deposition of AlN (aluminium nitride)
The ITO substrate cleaned up is put into closed atomic layer deposition cavity, it, will be flexible after being evacuated to vacuum state
ITO substrate is heated to 90 DEG C.N is passed through into cavity first2As the AlN presoma TMA (trimethyl aluminium) of carrier, continue
200ms, so that presoma is uniformly attached to ITO substrate surface.Then N is used2Cavity is rinsed well, continues 1500ms, removes
Remove extra metal nitride presoma.Plasma N is passed through into cavity again2, continue 100ms, so that N2Molecule be attached to
Metal nitride presoma in flexible ITO substrate sufficiently reacts, and forms one layer of AlN.Then reuse N2Cavity is rinsed
Completely, continue 1500ms, remove extra hydrone.The ITO of the AlN modification of different-thickness can be obtained in control loop number
Substrate.Each circulation is with a thickness of 0.09nm.
Step 3: four, five, six: in embodiment 1 Step 3: four, five, six is identical.The flexible perovskite in AlN modification front and back
Solar battery IV curve is as shown in Figure 5.
Claims (8)
1. the ITO electrode surface method of modifying for flexible perovskite solar battery, it is characterised in that the following steps are included:
1) cleaning of flexible ITO substrate；
2) deposition of insulated metal compound.
2. the ITO electrode surface method of modifying for flexible perovskite solar battery as described in claim 1, it is characterised in that
In step 1), the cleaning of the flexibility ITO substrate method particularly includes: using the ITO substrate being deposited on PEN as former material
Material, PEN/ITO substrate is cut, places into container and is cleaned by ultrasonic, is dried for standby.
3. the ITO electrode surface method of modifying for flexible perovskite solar battery as claimed in claim 2, it is characterised in that
The cutting is cut using paper knife.
4. the ITO electrode surface method of modifying for flexible perovskite solar battery as claimed in claim 2, it is characterised in that
The ultrasonic cleaning is successively cleaned by ultrasonic 20min using deionized water, ethyl alcohol, isopropanol.
5. the ITO electrode surface method of modifying for flexible perovskite solar battery as described in claim 1, it is characterised in that
In step 2), the deposition of the insulated metal compound method particularly includes: be put into the flexible ITO substrate after cleaning closed
Atomic layer deposition cavity in, after being evacuated to vacuum state, by flexible ITO substrate heat react；To closed atomic layer deposition chamber
N is passed through in body2As the metallic compound presoma of carrier, after continuing 100~500ms, so that metallic compound presoma is equal
It is even to be attached to ITO substrate surface, then use N2Closed atomic layer deposition cavity is rinsed well, is removed after continuing 1~5s
Extra metallic compound presoma, then N is passed through into closed atomic layer deposition cavity2H as carrier2O or plasma
N2, after continuing 100~500ms, so that hydrone or plasma nitrogen molecule and the metallization being attached in flexible ITO substrate
It closes object presoma sufficiently to react, forms one layer of metallic compound；Then N is reused2Closed atomic layer deposition cavity is rushed
Wash clean continues to remove extra hydrone or plasma nitrogen molecule after 1~5s, control loop number 5~10 times, i.e.,
Obtain the compound-modified ITO substrate of the insulated metal of different-thickness.
6. the ITO electrode surface method of modifying for flexible perovskite solar battery as claimed in claim 5, it is characterised in that
The temperature of the heating reaction is 80~110 DEG C.
7. the ITO electrode surface method of modifying for flexible perovskite solar battery as claimed in claim 5, it is characterised in that
0.45~1nm of thickness of the compound-modified ITO substrate of the insulated metal.
8. the ITO electrode surface method of modifying for flexible perovskite solar battery as claimed in claim 5, it is characterised in that
The insulated metal compound is a kind of in hafnium oxide, hafnium nitride, aluminium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810980955.6A CN109148694A (en) | 2018-08-27 | 2018-08-27 | ITO electrode surface method of modifying for flexible perovskite solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810980955.6A CN109148694A (en) | 2018-08-27 | 2018-08-27 | ITO electrode surface method of modifying for flexible perovskite solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109148694A true CN109148694A (en) | 2019-01-04 |
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| CN115312665A (en) * | 2022-07-28 | 2022-11-08 | 兰州大学 | Solar cell and preparation method thereof |
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