CN110246917A - A kind of inorganic perovskite solar battery and preparation method - Google Patents
A kind of inorganic perovskite solar battery and preparation method Download PDFInfo
- Publication number
- CN110246917A CN110246917A CN201910560196.2A CN201910560196A CN110246917A CN 110246917 A CN110246917 A CN 110246917A CN 201910560196 A CN201910560196 A CN 201910560196A CN 110246917 A CN110246917 A CN 110246917A
- Authority
- CN
- China
- Prior art keywords
- inorganic perovskite
- solar battery
- solution
- spiro
- ometad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 34
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 33
- 230000003647 oxidation Effects 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 238000004528 spin coating Methods 0.000 claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 230000031700 light absorption Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 33
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000003756 stirring Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 235000019441 ethanol Nutrition 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000004851 dishwashing Methods 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000002474 experimental method Methods 0.000 abstract description 3
- 230000002028 premature Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 53
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 24
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 11
- 238000000137 annealing Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000009396 hybridization Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of inorganic perovskite solar battery and preparation methods, belong to technical field of solar batteries.The present invention mainly overcomes shortcoming in the prior art, proposes a kind of inorganic perovskite solar battery and preparation method, including electron transfer layer, inorganic perovskite light-absorption layer, preceding oxidation hole transmission layer, carbon electrode are successively prepared on transparent conductive substrate；Prepare the detailed process of the preceding oxidation hole transmission layer are as follows: the Spiro-OMeTAD solution of oxygen oxidation is prepared by spin coating method.The present invention is used the method for hole premature oxidation, it can be oxidized before hole solution is prepared into hole transmission layer, avoid contact of inorganic perovskite during Hole oxidation with water, to avoid inorganic perovskite solar battery to the loss of its own, guaranteeing the success rate and reliability of experiment during the preparation process.
Description
Technical field
The present invention relates to a kind of inorganic perovskite solar battery and preparation methods, belong to technical field of solar batteries.
Background technique
Solar energy is a kind of huge cleanliness without any pollution energy of reserves, influenced by geographical environment it is small, by section all over the world
Scholars favor.Photothermal conversion and photoelectric conversion are that current people utilize the main two ways of solar energy, wherein solar energy
Power conversion technology has become one of the approach for solving fossil energy crisis most prospect.Currently, solar battery, which mainly faces, to be needed
It solves the problems, such as: (1) improving its incident photon-to-electron conversion efficiency and the service life of battery, (2) are dropped using new technology and material
The cost of low production.In recent years, perovskite solar battery is due to its excellent photoelectric properties, such as high absorption coefficient, low exciton
It is received significant attention in conjunction with energy and gap tunable.The development of perovskite solar battery is swift and violent, in a few years, device effect
Rate alreadys exceed 23%.However, the stability difference of perovskite solar battery seriously hinders their commercialization.In various calcium
In titanium ore solar battery, carbon-based perovskite solar battery is seemingly most hopeful to solve stability problem.Because of carbon materials
Material is stablized, and has good waterproofness.While the transfer efficiency of carbon-based perovskite solar battery grows steadily, carbon
Device stability and the large area manufacture of based perovskite solar battery also have made great progress, this has been well demonstrated that calcium titanium
Perhaps, mine solar battery can realize commercialization in the near future.
Due to the presence of organic principle in organic inorganic hybridization perovskite light absorbing layer, effect of the perovskite in humidity and heat
Under be extremely easy in decomposition, cause stability test poor, this not only proposes higher requirement to the working condition of battery, also limits
Its application in surroundings.Therefore, people begin trying to improve perovskite as light absorbing layer using inorganic perovskite
The stability of solar battery.CsSnI was used for the first time in inorganic perovskite in 20123As inorganic perovskite light-absorption layer, obtain
0.88% PCE (Z.Chen, J.J.Wang, Y.Ren, C.Yu, K.Shum, Appl.Phys.Lett.2012,101,
093901.), CsPbI was used by 20183Had been achieved for as inorganic perovskite absorbed layer be more than 17% efficiency
(Y.Wang,T.Y.Zhang,M.Kan,Y.X.Zhao,Bifunctional Stabilization of All-Inorganic
α-CsPbI3Perovskite for 17%Efficiency Photovoltaics.JACS.2018).
Inorganic perovskite (such as CsPbI3Deng) in the light absorber being seldom reported as in PSC in early days, because they are in room
The non-perovskites phase such as yellow is typically exhibited under temperature, and black cube P Perovskite Phase is at room temperature in environment item needed for photoelectric conversion
(W.Ahmad, J.Khan, G.Niu, J.Tang, Solar RRL 2017,1,1700048 unstable under part；b)
T.S.Ripolles,K.Nishinaka,Y.Ogomi,Y.Miyata,S.Hayase,Sol.Energy Mater.Sol.Cells
2016,144,532.).Eperon et al. (G.E.Eperon, G.M.Paterno, R.J.Sutton, A.Zampetti,
A.A.Haghighirad, F.Cacialli, H.J.Snaith, J.Mater.Chem.A 2015,3,19688) for the first time in PSC
Apply black α-CsPbI3, because they have found to stablize in black phase when handling in this black Xiang Wu air atmosphere.
Later research discovery is mainly that the water in air makes the inorganic perovskite of black α phase become other without photovoltaic property
Phase.Therefore just all steps are carry out in glove box to inorganic perovskite solar battery during the preparation process, avoid with
The contact of steam.
Spiro-OMeTAD is the hole transport layer material being most widely used because its have with perovskite light-absorption layer compared with
For matched energy level, the hole of calcium titanium ore bed generation when carrying out photoelectric conversion can be efficiently extracted, generates higher conversion effect
Rate.After the completion of hole transmission layer preparation, it usually needs aoxidized to hole transmission layer to improve its electric conductivity, otherwise will
Seriously affect the transfer efficiency of battery.Traditional mode of oxidizing is in electrically conducting transparent substrate, electron transfer layer, perovskite extinction
Layer, hole transmission layer carried out after prepare in glove box, by device global transfer into the environment for being rich in oxygen oxidation 2~
48h or even longer.Although some laboratories can guarantee device in oxygen atmosphere, other such as humidity, temperature are avoided
The influence for device such as degree, but this condition generally requires expensive equipment and could complete, while perovskite light-absorption layer sheet
Cause to decompose in being rich in also react with oxygen in the environment of oxygen.And inorganic perovskite light-absorption layer is for the sensitive journey of humidity
Du Genggao can cause to decompose in transfer process with the moisture in air, thus generally require more expensive equipment,
Increasingly complex technical skill avoids any point humidity completely.
Using the hole method of preceding oxidation, can prepared when hole or solution just by hole complete oxidation
Additional oxidation step is not needed later at hole transmission layer.Inorganic perovskite solar battery is avoided in the nothing of preparation process
The problem of machine perovskite light-absorption layer and moisture, perovskite light-absorption layer resolution problem caused by being contacted for a long time with oxygen, together
When saved expensive necessary instrument expense, enable more enterprises and laboratory to carry out inorganic perovskite solar-electricity
The work of pond related experiment.This method is not only only applicable to protect inorganic perovskite solar battery, simultaneously for protection
PbI3、FAPbI3、FA1-xMAxPbI3Equal hybrid inorganic-organics perovskite solar battery equally has applicability.
The use that metal electrode such as gold, silver etc. can be not only reduced using carbon electrode, is further reduced the cost, is used simultaneously
Carbon electrode can also obtain and use transfer efficiency similar in metal electrode.Meng Qingbo of the Chinese Academy of Sciences et al. is handed over using ambient solvent
Carbon electrode has been prepared in the method for changing, and achieves the transfer efficiency more than 19%, and same battery uses gold electrode, and also only 20%
Efficiency (Zhang H, Xiao J, Shi J, et al.Self-Adhesive Macroporous Carbon Electrodes
for Efficient and Stable Perovskite Solar Cells[J].Advanced Functional
Materials,2018.).Meanwhile vapor deposition, the sputtering etc. used in the preparation compared to electrodes such as gold, silver needs expensive device
Mode, carbon electrode can be more suitable industrialization using the methods of knife coating, mounting method manufacture electrode on a large scale.
Summary of the invention
The present invention mainly overcomes shortcoming in the prior art, proposes a kind of inorganic perovskite solar battery and system
Preparation Method.
The present invention solves technical solution provided by above-mentioned technical problem: a kind of inorganic perovskite solar battery preparation
Method, including electron transfer layer, inorganic perovskite light-absorption layer, preceding oxidation hole transport are successively prepared on transparent conductive substrate
Layer, carbon electrode；
Prepare the detailed process of the preceding oxidation hole transmission layer are as follows: pass through the Spiro-OMeTAD solution of oxygen oxidation
Spin coating method is prepared.
Further technical solution is that the Spiro-OMeTAD solution is prepared by following steps:
It is equipped with the chlorobenzene solution of the Spiro-OMeTAD of 20~100mg/mL first, is equipped with double the three of 400~600mg/mL
The acetonitrile solution of methyl fluoride sulfonic acid Asia amide lithium；
The acetonitrile solution of the Spiro-OMeTAD chlorobenzene solution of 1mL, the TBP solution of 28.8 μ L and 17.5 μ L is taken to mix again,
Stirring 2 hours or more.
Further technical solution is the oxygen oxidation process of the Spiro-OMeTAD solution are as follows: under atmospheric environment
Oxygen is passed through in molten Spiro-OMeTAD solution liquid bottle, Spiro-OMeTAD solution is aoxidized；The time wherein aoxidized
For 1~100min；The purity of the oxygen is 99.0000~99.9999%.
Further technical solution is the oxygen oxidation process of the Spiro-OMeTAD solution are as follows: under vacuum conditions
Oxygen is passed through in molten Spiro-OMeTAD solution liquid bottle, Spiro-OMeTAD solution is aoxidized；The time wherein aoxidized
For 1~100min；The purity of the oxygen is 99.0000~99.9999%.
Further technical solution is, the revolving speed in the spin coating method is 1000~8000rpm, spin-coating time is 20~
60s。
Further technical solution is, it is described before oxidation hole transmission layer with a thickness of 30~100nm.
Further technical solution is that the inorganic perovskite light-absorption layer is CsPbI3、CsPbI2Br、CsPbIBr2、
CsPbBr3、Cs2SnI6、Cs2PbBr6、Cs2PbI6、Cs3Sb2I9、Rb3Sb2I9、Cs3Bi2I9、Cs2BiAgCl6、Cs2BiAgBr6、
CsPb1-xSrxI2Br、CsPb0.9Sn0.1IBr2、CsSnI3、CsSnCl3、CsSnI3-xClx、CsSnBr3、CsSnI3-xBrx、CsGeI3
One or more of, with a thickness of 200~1000nm.
Further technical solution is, the carbon electrode be graphite, carbon black, carbon nanotube, carbon quantum dot, graphene one
Kind is a variety of, with a thickness of 3~200 μm.
Further technical solution is that the transparent conductive substrate is indium tin oxide-coated glass；In transparent conductive substrate
On prepare electron transfer layer before need to clean transparent conductive substrate, cleaning process are as follows: use dish washing liquid, deionized water, second
Alcohol, deionized water and ethyl alcohol are successively cleaned by ultrasonic 10~30min, are then dried up with nitrogen stream.
A kind of inorganic perovskite solar battery, is prepared using the above method.
Beneficial effects of the present invention: the present invention, as light absorbing layer, is had using inorganic perovskite compared to widely used
Machine inorganic hybridization perovskite, inorganic perovskite have better repellence to temperature, which makes battery in use, storage process
In be affected by temperature it is smaller, thus can retention property at relatively high temperatures, to realize that application creates condition in market for it.This hair
It is bright to use Spiro-OMeTAD as hole transmission layer, compared to other hole transmission layers, Spiro-OMeTAD and inorganic calcium titanium
The energy level of mine light-absorption layer more matches, while having more mature preparation process.Repellence of the inorganic perovskite for humidity
Weaker, traditional Hole oxidation mode are as follows: prepare electron transfer layer, inorganic calcium titanium ore bed, hole transport on conductive substrates
Layer, then hole transmission layer is placed in oxygen atmosphere and is aoxidized, this method for the more demanding of oxidation furnaces, and
It is difficult to ensure that the inorganic calcium titanium ore bed under oxidation process hole-transporting layer is not contacted with water, so that inorganic perovskite loses photovoltaic
Characteristic.Using by the method for hole premature oxidation, it can be oxidized, avoid before hole solution is prepared into hole transmission layer
Contact of inorganic perovskite during Hole oxidation with water, to avoid inorganic perovskite solar battery in preparation process
In loss to its own, guarantee the success rate and reliability of experiment.In conjunction with carbon material electrode, full-inorganic perovskite can be promoted
Solar cell properties and reduction manufacturing cost, help to realize the large-scale production of perovskite solar battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of perovskite solar battery of the invention；
Fig. 2 is the J-V curve graph of perovskite solar battery in embodiment 1；
Fig. 3 is the J-V curve graph of perovskite solar battery in embodiment 4.
Specific embodiment
Further description is done to the present invention below with reference to embodiment and attached drawing.
A kind of inorganic perovskite preparation method of solar battery of the invention, including successively prepared on transparent conductive substrate
Electron transfer layer, inorganic perovskite light-absorption layer, preceding oxidation hole transmission layer, carbon electrode；
Prepare the detailed process of the preceding oxidation hole transmission layer are as follows: pass through the Spiro-OMeTAD solution of oxygen oxidation
Spin coating method is prepared；
Specifically includes the following steps:
Step 1, cleaning transparent conductive substrate, and electron transfer layer is prepared on transparent conductive substrate；
Step 2, that raw material needed for inorganic perovskite according to coherent element are configured to inorganic perovskite presoma is molten
Liquid；
Step 3, the inorganic perovskite precursor solution for preparing step 2 are spun on electron-transport layer surface, respectively 40~
50 DEG C and 120~400 DEG C 2~10min of annealing, make film crystallize to obtain inorganic perovskite light-absorption layer；
Step 4 will obtain after completely dissolution preceding oxidation in Spiro-OMeTAD, Li-TFSI solution, TBP addition chlorobenzene
Hole transmission layer precursor liquid, the oxygen being passed through are aoxidized, and oxidation is then sealed；
Step 4 solution is spun on inorganic perovskite light-absorption layer obtained by step 3 by step 5, aoxidizes hole transport before obtaining
Layer；
Step 6 prepares carbon electrode on preceding oxidation hole transmission layer, obtains inorganic perovskite solar battery.
Preparation method of the present invention is simple, and it is right in inorganic perovskite solar battery preparation process to can be avoided with the method
The damage of battery itself can promote full-inorganic perovskite solar cell properties and reduce manufacturing cost, help to realize calcium
The large-scale production of titanium ore solar battery.
Using full-inorganic perovskite solar battery obtained by the above method, as shown in Figure 1 comprising stack gradually assembling
Transparent conductive electrode 1, electron transfer layer 2, inorganic perovskite light-absorption layer 3, preceding oxidation hole transmission layer 4 and carbon electrode 5.
Preferably, conductive substrates described in step 1 be fluorine-doped tin oxide electro-conductive glass, cleaning process be with dish washing liquid,
Deionized water, ethyl alcohol, acetone and ethyl alcohol are successively cleaned by ultrasonic 10~30min, are then dried up with nitrogen stream.
Preferably, the solvent in step 2 in inorganic perovskite precursor solution is DMSO or volume ratio is 4:1 DMSO and
DMF mixed solution, the concentration of inorganic perovskite precursor solution are 0.5~0.9
mol/L。
Preferably, described in step 3 when inorganic perovskite light-absorption layer spin coating, first 300~700rpm low speed 3~6s of spin coating,
Then 1500~3000rpm high speed spin coating 30s.
Preferably, the Li-TFSI solution described in step 4 by 2~5 μ l acetonitriles dissolution 1mg Li-TFSI stirring 5~
60min is formulated.
Preferably, Spiro-OMeTAD, Li-TFSI solution described in step 4, TBP are added sufficiently to dissolve in chlorobenzene and be adopted
Method is vibration, stirring, microwave, ultrasound, and dissolution time is 2~500min.
Preferably, the oxygen purity that step 4 is passed through be 99.0000%~99.9999%, be passed through the oxygen time be 1~
20min, being sealed oxidization time is 1~30 day.
Embodiment 1
The first, the cleaning of conductive substrates: by the ITO electro-conductive glass substrate of well cutting successively in acetone, isopropanol and ethyl alcohol
Middle each 30min of ultrasonic cleaning, is then dried up with nitrogen stream；
The second, the preparation of electron transfer layer: UV ozone is carried out to ITO electro-conductive glass substrate and is handled 15 minutes, using rotation
Coating deposits one layer of SnO on the surface ITO cleaned2It is electron transfer layer, 150 DEG C of annealing 30min；
Third, CsPbI2The preparation of Br light-absorption layer: by the PbI of 0.277g2, 0.220g PbBr2(DMSO) and 0.312g
CsI is dissolved in the DMSO solution of 1000 μ L, is then spin coated onto SnO2Surface；
Specific spin coating process is the spin coating of 500rpm low speed 5s, 2500rpm high speed spin coating 30s；First 42 DEG C of annealing after spin coating is good
2min, then 160 DEG C of annealing 10min, the precursor thin-film for forming spin coating crystallize to obtain full-inorganic perovskite light-absorption layer；
4th, it takes the Li-TFSI stirring and dissolving of 520mg in the acetonitrile of 1mL, obtains Li-TFSI- acetonitrile solution；
The Spiro-OMeTAD that balance weighs 72.3mg is placed in 5ml reagent bottle, takes 1ml chlorobenzene to pour into reagent with liquid-transfering gun
In bottle, stirring and dissolving adds the Li-TFSI- acetonitrile solution of the TBP and 17.5 μ L of 28.8 μ L, stirring；Spiro-OMeTAD,
Li-TFSI solution, TBP are added in chlorobenzene and obtain hole solution after completely dissolution, oxygen 5min are passed through in atmospheric environment, then
It is sealed oxidation；
5th, using 3000rpm, the hole transmission layer solution prepared is spun on CsPbI by the spin coating proceeding of 30s2Br
On film, do not aoxidize；
6th, the carbon electrode for scratching one layer 30 μm on the hole transport layer, to complete the system of perovskite solar battery
It is standby.
As shown in Fig. 2, the battery efficiency is 7.89%.
Embodiment 2
In this example, carbon electrode with a thickness of 20 μm, so that precursor thin-film crystalline is helped inorganic perovskite light-absorption layer
Annealing process are as follows: 30 DEG C, 5min；180 DEG C, 2min.Other steps are same as Example 1.In this example, inorganic perovskite is too
The efficiency 6.48% of positive energy battery.
Embodiment 3
In this example, carbon electrode with a thickness of 25 μm, prepare CsPbI2Solvent used in Br precursor solution is DMF.Its
His step is same as Example 1.In this example, the efficiency of inorganic perovskite solar battery is 5.08%.
Embodiment 4
The first, the cleaning of conductive substrates: by the ITO electro-conductive glass substrate of well cutting successively in acetone, isopropanol and ethyl alcohol
Middle each 30min of ultrasonic cleaning, is then dried up with nitrogen stream；
The second, the preparation of electron transfer layer: UV ozone is carried out to ITO conductive layer and handles 15min, using spin-coating method clear
The washed surface FTO deposits one layer of SnO2It is electron transfer layer, 150 DEG C of annealing 30min；
Third, CsPbI2The preparation of Br light-absorption layer: by the PbI of 0.2770g2, 0.2200g PbBr2(DMSO) and
The CsI of 0.3120g is dissolved in the DMSO solution of 1000 μ L, is then spin coated onto SnO2Surface；
Specific spin coating process is the spin coating of 500rpm low speed 5s, 2500rpm high speed spin coating 30s；First 42 DEG C of annealing after spin coating is good
2min, then 160 DEG C of annealing 10min, the precursor thin-film for forming spin coating crystallize to obtain full-inorganic perovskite light-absorption layer；
4th, it takes the Li-TFSI stirring and dissolving of 520mg in the acetonitrile of 1mL, obtains Li-TFSI- acetonitrile solution；
The Spiro-OMeTAD that balance weighs 72.3mg is placed in 5ml reagent bottle, takes 1ml chlorobenzene to pour into reagent with liquid-transfering gun
In bottle, stirring and dissolving adds the Li-TFSI- acetonitrile solution of the TBP and 17.5 μ L of 28.8 μ L, stirring；Spiro-OMeTAD,
Li-TFSI solution, TBP are added in chlorobenzene and obtain hole solution after completely dissolution, are passed through oxygen 6min, are then sealed oxygen
Change；
5th, using 4000rpm, the hole transmission layer solution prepared is spun on CsPbI by the spin coating proceeding of 30s2Br
On film, do not aoxidize；
6th, the carbon electrode for scratching one layer 30 μm on the hole transport layer, to complete the system of perovskite solar battery
It is standby.
As shown in figure 3, the battery efficiency is 9.67%.
Embodiment 5
The first, the cleaning of conductive substrates: by the ITO electro-conductive glass substrate of well cutting successively in acetone, isopropanol and ethyl alcohol
Middle each 30min of ultrasonic cleaning, is then dried up with nitrogen stream.
The second, the preparation of electron transfer layer: UV ozone is carried out to ITO conductive layer and handles 15min, using spin-coating method clear
The washed surface FTO deposits one layer of SnO2It is electron transfer layer, 150 DEG C of annealing 30min；
Third, CsPbI2The preparation of Br light absorbing layer: by the PbI of 0.2770g2, 0.2200g PbBr2(DMSO) and
The CsI of 0.3120g is dissolved in the DMSO solution of 1000 μ L, is then spin coated onto SnO2Surface；
Specific spin coating process is the spin coating of 500rpm low speed 5s, 2500rpm high speed spin coating 30s；First 42 DEG C of annealing after spin coating is good
2min, then 160 DEG C of annealing 10min, the precursor thin-film for forming spin coating crystallize to obtain full-inorganic perovskite light absorbing layer.
5th, it takes the Li-TFSI stirring and dissolving of 520mg in the acetonitrile of 1mL, obtains Li-TFSI- acetonitrile solution；
The Spiro-OMeTAD that balance weighs 72.3mg is placed in 5ml reagent bottle, takes 1ml chlorobenzene to pour into reagent with liquid-transfering gun
In bottle, stirring and dissolving adds the Li-TFSI- acetonitrile solution of the TBP and 17.5 μ L of 28.8 μ L, stirring；Spiro-OMeTAD,
Li-TFSI solution, TBP are added in chlorobenzene and obtain hole solution after completely dissolution, are passed through oxygen 3min, are then sealed oxygen
Change；
5th, using 6000rpm, the hole transmission layer solution prepared is spun on CsPbI by the spin coating proceeding of 30s2Br
On film, do not aoxidize.
6th, one layer of carbon electrode is scratched on the hole transport layer, to complete the preparation of perovskite solar battery.
The above is not intended to limit the present invention in any form, although the present invention takes off through the foregoing embodiment
Show, however, it is not intended to limit the invention, any person skilled in the art, is not departing from technical solution of the present invention range
It is interior, made when the technology contents using the disclosure above and change or be modified to the equivalent embodiments of equivalent variations a bit, but it is all not
Be detached from technical solution of the present invention content, according to the technical essence of the invention it is to the above embodiments it is any it is simple modification,
Equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of inorganic perovskite preparation method of solar battery, which is characterized in that including successively being made on transparent conductive substrate
Standby electron transfer layer, inorganic perovskite light-absorption layer, preceding oxidation hole transmission layer, carbon electrode；
Prepare the detailed process of the preceding oxidation hole transmission layer are as follows: the Spiro-OMeTAD solution of oxygen oxidation is passed through into spin coating
Method is prepared.
2. a kind of inorganic perovskite preparation method of solar battery according to claim 1, which is characterized in that described
Spiro-OMeTAD solution is prepared by following steps:
It is equipped with the chlorobenzene solution of the Spiro-OMeTAD of 20~100mg/mL first, is equipped with double fluoroforms of 400~600mg/mL
The acetonitrile solution of base sulfonic acid Asia amide lithium；
The acetonitrile solution of the Spiro-OMeTAD chlorobenzene solution of 1mL, the TBP solution of 28.8 μ L and 17.5 μ L is taken to mix again, stirring 2
Hour or more.
3. a kind of inorganic perovskite preparation method of solar battery according to claim 2, which is characterized in that described
The oxygen oxidation process of Spiro-OMeTAD solution are as follows: oxygen is passed through molten Spiro-OMeTAD solution liquid bottle under atmospheric environment
In, Spiro-OMeTAD solution is aoxidized；The time wherein aoxidized is 1~100min；The purity of the oxygen is
99.0000~99.9999%.
4. a kind of inorganic perovskite preparation method of solar battery according to claim 2, which is characterized in that described
The oxygen oxidation process of Spiro-OMeTAD solution are as follows: oxygen is passed through molten Spiro-OMeTAD solution liquid bottle under vacuum conditions
In, Spiro-OMeTAD solution is aoxidized；The time wherein aoxidized is 1~100min；The purity of the oxygen is
99.0000~99.9999%.
5. a kind of inorganic perovskite preparation method of solar battery according to claim 1, which is characterized in that the spin coating
Revolving speed in method is 1000~8000rpm, and spin-coating time is 20~60s.
6. a kind of inorganic perovskite preparation method of solar battery according to claim 1, which is characterized in that the preceding oxygen
Change hole transmission layer with a thickness of 30~100nm.
7. a kind of inorganic perovskite preparation method of solar battery according to claim 1, which is characterized in that described inorganic
Perovskite light-absorption layer is CsPbI3、CsPbI2Br、CsPbIBr2、CsPbBr3、Cs2SnI6、Cs2PbBr6、Cs2PbI6、Cs3Sb2I9、
Rb3Sb2I9、Cs3Bi2I9、Cs2BiAgCl6、Cs2BiAgBr6、CsPb1-xSrxI2Br、CsPb0.9Sn0.1IBr2、CsSnI3、
CsSnCl3、CsSnI3-xClx、CsSnBr3、CsSnI3-xBrx、CsGeI3One or more of, with a thickness of 200~
1000nm。
8. a kind of inorganic perovskite preparation method of solar battery according to claim 1, which is characterized in that the carbon electricity
The extremely one or more of graphite, carbon black, carbon nanotube, carbon quantum dot, graphene, with a thickness of 3~200 μm.
9. a kind of inorganic perovskite preparation method of solar battery according to claim 8, which is characterized in that described transparent
Electrically-conductive backing plate is indium tin oxide-coated glass；Prepared on transparent conductive substrate need before electron transfer layer to transparent conductive substrate into
Row cleaning, cleaning process are as follows: successively it is cleaned by ultrasonic 10 with dish washing liquid, deionized water, ethyl alcohol, deionized water and ethyl alcohol~
Then 30min is dried up with nitrogen stream.
10. a kind of inorganic perovskite solar battery, which is characterized in that utilize the described in any item method systems of claim 1-9
It is standby to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910560196.2A CN110246917A (en) | 2019-06-26 | 2019-06-26 | A kind of inorganic perovskite solar battery and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910560196.2A CN110246917A (en) | 2019-06-26 | 2019-06-26 | A kind of inorganic perovskite solar battery and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110246917A true CN110246917A (en) | 2019-09-17 |
Family
ID=67889574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910560196.2A Pending CN110246917A (en) | 2019-06-26 | 2019-06-26 | A kind of inorganic perovskite solar battery and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110246917A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676342A (en) * | 2019-10-10 | 2020-01-10 | 陕西师范大学 | Perovskite material-based X-ray detector and preparation method thereof |
| CN110752299A (en) * | 2019-10-21 | 2020-02-04 | 大连理工大学 | Preparation method of solar cell containing perovskite-interface connecting layer |
| CN111293223A (en) * | 2020-02-27 | 2020-06-16 | 陕西师范大学 | Quantum dot modified inorganic perovskite solar cell and preparation method thereof |
| CN111524986A (en) * | 2020-05-07 | 2020-08-11 | 西南石油大学 | Portable and efficient perovskite-energy storage integrated device and preparation method thereof |
| CN112038492A (en) * | 2020-09-18 | 2020-12-04 | 昆山协鑫光电材料有限公司 | Hole transport layer, and preparation method and application thereof |
| CN112993067A (en) * | 2019-12-13 | 2021-06-18 | 中国科学院大连化学物理研究所 | Inorganic perovskite solar cell and preparation method thereof |
| CN113192843A (en) * | 2021-04-06 | 2021-07-30 | 电子科技大学 | Preparation method and application of novel non-lead-based perovskite film |
| CN116261341A (en) * | 2023-03-14 | 2023-06-13 | 西南石油大学 | Precursor solution and preparation method thereof, hole transport layer preparation and perovskite solar cell preparation method |
-
2019
- 2019-06-26 CN CN201910560196.2A patent/CN110246917A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676342B (en) * | 2019-10-10 | 2021-11-30 | 陕西师范大学 | Perovskite material-based X-ray detector and preparation method thereof |
| CN110676342A (en) * | 2019-10-10 | 2020-01-10 | 陕西师范大学 | Perovskite material-based X-ray detector and preparation method thereof |
| CN110752299A (en) * | 2019-10-21 | 2020-02-04 | 大连理工大学 | Preparation method of solar cell containing perovskite-interface connecting layer |
| CN112993067B (en) * | 2019-12-13 | 2022-11-15 | 中国科学院大连化学物理研究所 | Inorganic perovskite solar cell and preparation method thereof |
| CN112993067A (en) * | 2019-12-13 | 2021-06-18 | 中国科学院大连化学物理研究所 | Inorganic perovskite solar cell and preparation method thereof |
| CN111293223A (en) * | 2020-02-27 | 2020-06-16 | 陕西师范大学 | Quantum dot modified inorganic perovskite solar cell and preparation method thereof |
| CN111293223B (en) * | 2020-02-27 | 2022-08-23 | 陕西师范大学 | Quantum dot modified inorganic perovskite solar cell and preparation method thereof |
| CN111524986A (en) * | 2020-05-07 | 2020-08-11 | 西南石油大学 | Portable and efficient perovskite-energy storage integrated device and preparation method thereof |
| CN112038492A (en) * | 2020-09-18 | 2020-12-04 | 昆山协鑫光电材料有限公司 | Hole transport layer, and preparation method and application thereof |
| CN112038492B (en) * | 2020-09-18 | 2023-11-28 | 昆山协鑫光电材料有限公司 | Hole transport layer and preparation method and application thereof |
| CN113192843A (en) * | 2021-04-06 | 2021-07-30 | 电子科技大学 | Preparation method and application of novel non-lead-based perovskite film |
| CN116261341A (en) * | 2023-03-14 | 2023-06-13 | 西南石油大学 | Precursor solution and preparation method thereof, hole transport layer preparation and perovskite solar cell preparation method |
| CN116261341B (en) * | 2023-03-14 | 2023-10-03 | 西南石油大学 | Precursor solution and preparation method thereof, hole transport layer preparation and perovskite solar cell preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110246917A (en) | A kind of inorganic perovskite solar battery and preparation method | |
| CN104157788B (en) | It is a kind of to be based on SnO2Perovskite thin film photovoltaic cell and preparation method thereof | |
| CN104505409B (en) | SnO2 porous structure perovskite photovoltaic cell and preparation method thereof | |
| CN109037398B (en) | Preparation method of cesium tin iodine film and photovoltaic device based on cesium tin iodine film | |
| CN110246971A (en) | Inorganic perovskite solar battery and preparation method based on preceding oxidation hole transmission layer | |
| CN106299136B (en) | A kind of method that room-temperature dissolution lead iodide prepares adulterated with Ca and Ti ore hull cell | |
| CN108598268B (en) | Method for preparing planar heterojunction perovskite solar cell by printing under environmental condition | |
| CN109524548B (en) | Perovskite solar cell and preparation method thereof | |
| CN106025085A (en) | Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof | |
| CN109216557A (en) | One kind being based on citric acid/SnO2Perovskite solar battery of electron transfer layer and preparation method thereof | |
| CN104576932A (en) | Mesoscopic perovskite photovoltaic cell with tin-oxide electron-transporting layer and preparation method thereof | |
| CN108389969B (en) | Green solvent system and mixed solution for preparing perovskite layer of perovskite solar cell | |
| CN108063186A (en) | Zinc doping nickel oxide hole transmission layer inverts perovskite solar cell and preparation method | |
| CN108878661A (en) | A kind of preparation method of the perovskite solar battery of carbon quantum dot modification | |
| CN109273612A (en) | CsPbBr3The continuous gas-phase deposition process for preparing of perovskite battery | |
| CN109755394A (en) | A method of perovskite solar battery is prepared using air knife coating | |
| CN106953014A (en) | A kind of hybrid solar cell structure and preparation method using CuPc as hole transmission layer | |
| CN107331775A (en) | A kind of perovskite solar cell of high-quality electron transfer layer and preparation method thereof | |
| CN106450007A (en) | Solar cell based on cuprous iodide/calcium titanium ore bulk heterojunction and preparation method thereof | |
| CN108649124A (en) | A kind of inorganic perovskite solar cell of high efficiency and preparation method thereof | |
| CN102732921B (en) | Ionic liquid electrodeposition method for preparing three-dimensional ordered macroporous silicon-germanium and germanium-aluminum heterogeneous thin-film material | |
| CN106252516A (en) | A kind of planar inverted translucent hybrid perovskite solar cell device and preparation method | |
| CN103390692B (en) | A kind of method preparing copper indium tellurium thin films | |
| CN114284444B (en) | Preparation method of CsPbBr3 perovskite solar cell | |
| CN113363394B (en) | Perovskite battery preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190917 |