CN109148664A - A kind of photodiode chip and preparation method thereof - Google Patents
A kind of photodiode chip and preparation method thereof Download PDFInfo
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- CN109148664A CN109148664A CN201811150039.6A CN201811150039A CN109148664A CN 109148664 A CN109148664 A CN 109148664A CN 201811150039 A CN201811150039 A CN 201811150039A CN 109148664 A CN109148664 A CN 109148664A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000009792 diffusion process Methods 0.000 claims abstract description 36
- 238000002161 passivation Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003776 cleavage reaction Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 230000007017 scission Effects 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
A kind of photodiode chip, including substrate, substrate are equipped with photosurface and electrode layer；Electrode layer includes electrode retaining collar and electrode pad, and electrode retaining collar is arranged around photosurface, and electrode pad is electrically connected with electrode retaining collar；Substrate includes first outer edge opposite with electrode pad position, and photosurface includes the first photosensitive edge opposite with electrode pad position, and the first photosensitive edge is consistent with the spacing between the first outer edge；A kind of preparation method of photodiode chip, includes the following steps: S1: outer layer growth；S2: in epi-layer surface growth of passivation film；S3: diffusion region hole is formed in epi-layer surface；S4: Zn diffusion is carried out by diffusion region hole, forms diffusion region；S5: anti-reflection film is grown in epi-layer surface；S6: electrode contact hole is formed；S7: electrode evaporation layer；S8: electrode retaining collar and electrode pad are formed；S9: rear electrode is evaporated at the epitaxial layer back side；S10: it is cut into single photodiode chip.
Description
Technical field
The present invention relates to technical field of photo communication, and in particular to a kind of photodiode chip and preparation method thereof.
Background technique
Laser diode due to having the characteristics that rectilinear propagation, small spot size, monochromaticjty, high light intensity and coherence,
CD drive on computers, the print head in laser printer, barcode scanner, laser ranging, laser medicine, light
It is widely applied in the equipment such as fiber communication, light of stage, laser cutting welding and laser weapon.
It include laser (LaserDiode, LD) and photodiode chip in laser diode
(MonitorPhotoDiode, MPD), laser is for emitting laser.Photodiode chip is located at the lower section of laser, uses
In the laser received, monitoring laser issues.
Photodiode chip is equipped with photosurface, and the laser that laser is launched drops on photosurface, by photosensitive
Face is absorbed by photodiode chip, and then forms standby current, to carry out monitoring back light to laser.
But existing photodiode chip receives the low efficiency of light, and it is small in turn result in standby current.In two pole of laser
In the actual production of pipe, influences, cause bad vulnerable to patch location, bonding wire craft etc..
Summary of the invention
(1) the object of the present invention is to provide a kind of photodiode cores that the light efficiency that reception laser emits is high
Piece and preparation method thereof.
(2) technical solution
In order to realize above-mentioned technical problem, the present invention provides a kind of photodiode chip, including substrate, the substrate
It is equipped with photosurface and electrode layer；The electrode layer includes electrode retaining collar and electrode pad, and the electrode retaining collar surrounds the photosurface
Setting, the electrode pad are electrically connected with the electrode retaining collar；
The substrate includes first outer edge opposite with the electrode pad position, and the photosurface includes and the electricity
The first opposite photosensitive edge of pole pad locations, the first photosensitive edge are consistent with the spacing between first outer edge.
First outer edge of the photosensitive edge of the first of the photosurface of photodiode chip provided by the invention and substrate it
Between spacing it is consistent so that the white space between photosurface and substrate edge reduces, increase the area of photosurface, and then work as
When using the photodiode chip, even if laser center point deviates the central point of the chip, since photosurface is sufficiently large, so
It can be improved to laser induced plasma flow field, improve standby current.
Further, the spacing between the described first photosensitive edge and first outer edge is respectively less than 30um.
Further, the substrate further includes opposite the second outer edge and third outer edge in position, and the photosurface is also
Including position opposite the second photosensitive edge and the photosensitive edge of third；Between the second photosensitive edge and second outer edge
Spacing it is consistent, the photosensitive edge of third is consistent with the spacing between the third outer edge.
Further, the spacing between the described second photosensitive edge and second outer edge is all larger than 10um, and described
Spacing between three photosensitive edges and the third outer edge is all larger than 10um.
Further, the substrate is rectangle, and the first photosensitive edge is straight flange.
Further, the described second photosensitive edge and the photosensitive edge of the third are straight flange.
Further, the photosurface further includes the fourth photosensitive edge opposite with the described first photosensitive marginal position, institute
Stating the 4th photosensitive edge is straight flange.
Further, the photosurface is rectangle, and in the rectangle of the side of the rectangle of the photosurface and the substrate
Corresponding side is parallel.
Further, length of the photosurface along the direction at the described first photosensitive edge is greater than 130um, the photosurface
Length along the direction perpendicular to the described first photosensitive edge is greater than 210um.
Further, the substrate includes epitaxial layer and anti-reflection film, diffuses to form diffusion region inwards on the epitaxial layer；Institute
It states anti-reflection film and the electrode retaining collar is all set in above the diffusion region, and the electrode retaining collar is arranged around the anti-reflection film；
The surface that the anti-reflection film is formed is the photosurface.
Further, the epitaxial layer includes substrate, the buffer layer being set on the substrate, is set to the buffer layer
On absorbed layer and the top layer that is set on the absorbed layer, the diffusion region is spread in the top layer and the absorbed layer；
The substrate further includes passivating film and back electrode layer, and the passivating film is set on the top layer；The passivating film surrounds institute
Electrode retaining collar setting is stated, the electrode pad is set on the passivating film；The back electrode layer is set under the substrate
Face.
Further, the depth of the diffusion region is 1um~2um, and the substrate is made of the InP material for mixing S；It is described slow
Rush layer be made of the N-type InP material for mixing Si and doping concentration be 5 X 1018cm-3, the buffer layer with a thickness of 0.5um~
2um；The absorbed layer is made of InGaAs material and doping concentration is 1 X 1015cm-3, the absorbed layer with a thickness of 1um~
5um；The top layer is made of InP material and doping concentration is 1 X 1016cm-3, the top layer with a thickness of 0.5um~2um.
The present invention also provides a kind of preparation methods of photodiode chip, include the following steps:
S1: using metallo-organic compound chemical gaseous phase deposition epitaxial device on substrate successively grown buffer layer, absorb
Layer and top layer complete outer layer growth；
S2: in the vapour deposition process equipment growth of passivation film of epi-layer surface using plasma enhancing chemistry, institute
It states passivating film to be made of SiNx material, and thickness is greater than 5000A, refractive index is 2.0 ± 0.05；
S3: diffusion region hole is formed using the method for photoetching corrosion on the passivating film；
S4: carrying out Zn diffusion by the diffusion region hole using zinc diffusion technique, forms diffusion region, the diffusion region diffusion
In the top layer and the absorbed layer；
S5: anti-reflection film is grown in the epi-layer surface using PECVD growth technique, the anti-reflection film is by SiNx material system
At, and anti-reflection film, with a thickness of 1500A~2000A, refractive index is 1.96 ± 0.02；
S6: electrode contact hole is formed on the anti-reflection film using lithographic wet etching process；
S7: it is deposited to form electrode layer in the epi-layer surface using thermal evaporation process；The electrode layer is Cr/Au knot
Structure, and Cr layers with a thickness of 300A~500A, Au layers of thickness is greater than 5000A；
S8: electrode retaining collar is formed using photoetching process and electrode pad, the electrode retaining collar are located in the electrode contact hole, institute
Electrode pad is stated to be located on the passivating film；
S9: carrying out reduction processing to the epitaxial layer back side using abrasive polishing process, and thickness thinning is less than 150um, and
It evaporates to form rear electrode at the epitaxial layer back side, the rear electrode is made of Au material and thickness is greater than 5000A；
S10, single photodiode chip, the technique for completing photodiode chip are cut into using cleavage cutting technique
Production.
The photodiode chip that the preparation method of photodiode chip provided by the invention is prepared receives the effect of light
Rate is high, and then standby current is big, does not easily cause bad.
Detailed description of the invention
The advantages of above-mentioned and/or additional aspect of the invention, will be apparent from the description of the embodiment in conjunction with the following figures
Be readily appreciated that, in which:
Fig. 1 is the top view of laser diode；
Fig. 2 is the top view of photodiode chip provided by the invention；
Fig. 3 is cross-sectional view of the photodiode chip shown in Fig. 2 along the direction A-A '；
Wherein corresponding relationship of the Fig. 1 into Fig. 3 between appended drawing reference and component names are as follows:
1, laser diode, 2, laser, 3, photodiode chip, 31, substrate, the 311, first outer edge, 312,
Two outer edges, 313, third outer edge, 314, epitaxial layer, 315, anti-reflection film, 316, diffusion region, the 317, the 4th outer edge, 32, light
Quick face, the 321, first photosensitive edge, the 322, second photosensitive edge, 323, the photosensitive edge of third, the 324, the 4th photosensitive edge, 33,
Electrode layer, 331, electrode retaining collar, 332, electrode pad, 4, pin, 5, substrate, 6, buffer layer, 7, absorbed layer, 8, top layer, 9, passivation
Film, 10, back electrode layer.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the absence of conflict, the implementation of the application
Feature in example and embodiment can be combined with each other.
Referring to FIG. 1, laser diode 1 includes laser 2 (LaserDiode, LD) and photodiode chip 3
(MonitorPhotoDiode, MPD), laser 2 is for emitting laser.Photodiode chip 3 is located at the lower section of laser 2,
For receiving, monitoring the laser of the sending of laser 2.
Multiple pins 4 are additionally provided on the laser diode 1, the pin 4 is used for and 3 electricity of photodiode chip
Connection is powered on by being powered on to the pin 4 to the photodiode chip 3.
Referring to FIG. 2, the present invention provides a kind of photodiode chip 3, including substrate 31.The substrate 31 is equipped with light
Quick face 32 and electrode layer 33, the electrode layer 33 include electrode retaining collar 331 and electrode pad 332, and the electrode retaining collar 331 is around described
Photosurface 32 is arranged, and the electrode pad 332 is electrically connected with the electrode retaining collar 31.
The electrode pad 332 is powered on the electrode retaining collar 331 by the pin 4 for being electrically connected with the pin 4
So that the photodiode chip 3 works.Specifically, the electrode pad 332 passes through bonding wire with the pin 4
It is electrically connected.The photosurface 32 is for receiving the light that the laser 2 emits, to carry out to the laser 2
Monitoring back light.
Specifically, the substrate 31 includes first outer edge 311 opposite with 332 position of electrode pad.The light
Quick face 32 includes the first photosensitive edge 321 opposite with 332 position of electrode pad, the first photosensitive edge 321 and institute
The spacing stated between the first outer edge 311 is consistent.
Optionally, the spacing between the described first photosensitive edge 321 and first outer edge 311 is respectively less than 30um.
The photodiode chip 3 side opposite with 332 position of electrode pad is arranged in the laser 2
Top is electrically connected convenient for the electrode pad 332 and the pin 4, and avoids the electrode pad 332 and the pin 4
The light that the bonding wire being connected stops the laser 2 to emit drops on the photosurface 32.
Optionally, the substrate 31 is rectangle, and the first photosensitive edge 321 is straight flange.
In other embodiments, the substrate 31 can have any shape, and the first photosensitive edge 321 can be saw
Tooth form, waveform or arc, as long as meeting the spacing one between the described first photosensitive edge 321 and first outer edge 311
Cause.
The substrate 31 further includes opposite the second outer edge 312 and third outer edge 313 in position, and the photosurface 32 is also
Including position opposite the second photosensitive edge 322 and the photosensitive edge 323 of third.The second photosensitive edge 322 and described second
Spacing between outer edge 312 is consistent, and the photosensitive edge 323 of third is consistent with the spacing between the third outer edge 313.
Optionally, the spacing between the described second photosensitive edge 322 and second outer edge 312 is all larger than 10um, institute
The spacing stated between the photosensitive edge 323 of third and the third outer edge 313 is all larger than 10um.
Optionally, the described second photosensitive edge 322 and the photosensitive edge 323 of the third are straight flange.
In other embodiments, the described second photosensitive edge 322 and/or the photosensitive edge 323 of the third can be saw
Tooth form, waveform or arc, as long as meeting the spacing one between the described second photosensitive edge 322 and second outer edge 312
It causes, the photosensitive edge 323 of third is consistent with the spacing between the third outer edge 313.
The substrate 31 further includes fourth outer edge 317 opposite with 311 position of the first outer edge.
The photosurface 32 further includes the fourth photosensitive edge 324 opposite with the described first photosensitive 321 position of edge, described
4th photosensitive edge 324 is straight flange.
In other embodiments, the described 4th photosensitive edge 324 can be zigzag, waveform or arc.
Optionally, the photosurface 32 is rectangle, and the square of the side of the rectangle of the photosurface 32 and the substrate 31
Corresponding side is parallel in shape.For example, in the present embodiment, the first photosensitive edge 321 and first outside
Edge 311 is parallel, and the second photosensitive edge 322 is parallel with second outer edge 312, the photosensitive edge 323 of third
Parallel with the third outer edge 313, the 4th photosensitive edge 324 is parallel with the 4th outer edge 317.
Length of the photosurface 32 along the direction at the described first photosensitive edge 321 is greater than 130um, 32 edge of photosurface
It is greater than 210um perpendicular to the length in the direction at the described first photosensitive edge 321.
In other embodiments, the photosurface 32 can be rectangle with rounded corners.
Referring to FIG. 3, the substrate 31 includes epitaxial layer 314 and anti-reflection film 315, spread inwards on the epitaxial layer 314
Form diffusion region 316.The anti-reflection film 315 and the electrode retaining collar 331 are all set in 316 top of diffusion region, and described
Electrode retaining collar 331 is arranged around the anti-reflection film 315.The surface that the anti-reflection film 315 is formed is the photosurface 32.
Specifically, the epitaxial layer 314 includes substrate 5, the buffer layer 6 being set on the substrate 5, is set to described delay
The absorbed layer 7 rushed on layer 6 and the top layer 8 being set on the absorbed layer 7.The diffusion region 316 is spread in the top layer 8 and institute
It states in absorbed layer 7.
The substrate 31 further includes passivating film 9 and back electrode layer 10, and the passivating film 9 is set on the top layer 8.Institute
It states passivating film 9 to be arranged around the electrode retaining collar 331, the electrode pad 332 is set on the passivating film 9.The back side electricity
Pole layer 10 is set to below the substrate 5, is opposite with 6 position of buffer layer one below the substrate 5 specifically
Side.
The depth of the diffusion region 316 is 1um~2um, and the substrate 5 is made of the InP material for mixing S, the buffer layer 6
N-type InP material by mixing Si is made and doping concentration is 5 X 1018cm-3, the buffer layer 6 with a thickness of 0.5um~2um.Institute
State absorbed layer 7 be made of InGaAs material and doping concentration be 1 X 1015cm-3, the absorbed layer 7 with a thickness of 1um~5um.
The top layer 8 is made of InP material and doping concentration is 1 X 1016cm-3, the top layer 8 with a thickness of 0.5um~2um.
Detailed working principle are as follows: the light that the laser 2 emits is incident on the expansion by the anti-reflection film 315
Area 316 is dissipated, photoelectric conversion is carried out, photo-generated carrier is generated, and then form standby current, to supervise to the laser 2
It surveys.
The present invention also provides a kind of production methods of photodiode chip, include the following steps:
S1: metallo-organic compound chemical gaseous phase deposition (Metal-organic Chemical Vapor is used
Deposition, MOCVD) epitaxial device successively grown buffer layer 6, absorbed layer 7 and top layer 8 on substrate 5, complete the extension
Layer 314 is grown；
S2: in the vapour deposition process (Plasma of the 314 surface using plasma of epitaxial layer enhancing chemistry
Enhanced Chemical Vapor Deposition, PECVD) equipment growth of passivation film 9, the passivating film 9 is by SiNx material
Material is made, and thickness is greater than 5000A, and refractive index is 2.0 ± 0.05；
S3: diffusion region hole is formed using the method for photoetching corrosion on the passivating film 9；
S4: Zn diffusion is carried out by the diffusion region hole using zinc diffusion technique, forms diffusion region 316；The diffusion region
316 are spread in the top layer 8 and the absorbed layer 7；
S5: using PECVD growth technique 314 surface of epitaxial layer grow anti-reflection film 315, the anti-reflection film 315 by
SiNx material is made, and the anti-reflection film 315 with a thickness of 1500A~2000A, refractive index is 1.96 ± 0.02；
S6: electrode contact hole is formed on the anti-reflection film 315 using lithographic wet etching process；
S7: using thermal evaporation process in the 314 surface electrode evaporation layer of epitaxial layer, the electrode layer is Cr/Au structure,
And Cr layers with a thickness of 300A~500A, Au layers of thickness is greater than 5000A；
S8: electrode retaining collar 331 and electrode pad 332 are formed using photoetching process；The electrode retaining collar 331 is located at the electrode and connects
In contact hole, the electrode pad 332 is located on the passivating film 9；
S9: carrying out reduction processing to 314 back side of epitaxial layer using abrasive polishing process, and thickness thinning is less than 150um,
And rear electrode is evaporated at 314 back side of epitaxial layer, rear electrode is made of Au material and thickness is greater than 5000A；
S10, it is cut into single photodiode chip 3 using cleavage cutting technique, completes the work of photodiode chip 3
Skill production.
Outside the photosensitive edge 321 of the first of the photosurface 32 of photodiode chip provided by the invention and the first of substrate 31
Spacing between edge 311 is consistent, so that the white space between 31 edge of photosurface 32 and substrate reduces, increases photosurface
32 area, and then when using the photodiode chip, even if laser center point deviates the central point of the chip, due to light
Quick face 32 is sufficiently large, it is possible to improve to laser induced plasma flow field, improve standby current.
The photodiode chip that the preparation method of photodiode chip provided by the invention is prepared receives the effect of light
Rate is high, and then standby current is big, does not easily cause bad.
In the description of the present invention, it should be noted that the orientation or positional relationship of the instructions such as term " on ", "lower" is base
In orientation or positional relationship shown in the drawings, it is merely for convenience of description of the present invention and simplification of the description, rather than indication or suggestion
Signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to this
The limitation of invention.In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relatively heavy
The property wanted.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation " " connects
It is logical ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be direct connection, can also be can be by intermediary indirect communication
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.In addition, in the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or two
More than.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (13)
1. a kind of photodiode chip, it is characterised in that: including substrate, the substrate is equipped with photosurface and electrode layer；Institute
Stating electrode layer includes electrode retaining collar and electrode pad, and the electrode retaining collar is arranged around the photosurface, the electrode pad with it is described
Electrode retaining collar electrical connection；
The substrate includes first outer edge opposite with the electrode pad position, and the photosurface includes welding with the electrode
The first opposite photosensitive edge of disk position, the first photosensitive edge are consistent with the spacing between first outer edge.
2. photodiode chip according to claim 1, it is characterised in that: the first photosensitive edge and described first
Spacing between outer edge is respectively less than 30um.
3. photodiode chip according to claim 1, it is characterised in that: the substrate further includes opposite in position
Two outer edges and third outer edge, the photosurface further include opposite the second photosensitive edge and the photosensitive edge of third in position；Institute
The spacing stated between the second photosensitive edge and second outer edge is consistent, the photosensitive edge of third and the third outer edge
Between spacing it is consistent.
4. photodiode chip according to claim 3, it is characterised in that: the second photosensitive edge and described second
Spacing between outer edge is all larger than 10um, and the spacing between the photosensitive edge of third and the third outer edge is all larger than
10um。
5. photodiode chip according to claim 2, it is characterised in that: the substrate is rectangle, first light
Quick edge is straight flange.
6. photodiode chip according to claim 4, it is characterised in that: the second photosensitive edge and the third
Photosensitive edge is straight flange.
7. photodiode chip according to claim 1, it is characterised in that: the photosurface further includes and described first
The 4th opposite photosensitive edge of photosensitive marginal position, the 4th photosensitive edge are straight flange.
8. photodiode chip according to claim 5, it is characterised in that: the photosurface is rectangle, and the light
The side of the rectangle in quick face is parallel with corresponding side in the rectangle of the substrate.
9. photodiode chip according to claim 8, it is characterised in that: the photosurface is along the described first photosensitive side
The length in the direction of edge is greater than 130um, and length of the photosurface along the direction perpendicular to the described first photosensitive edge is greater than
210um。
10. photodiode chip according to claim 1, it is characterised in that: the substrate includes epitaxial layer and anti-reflection
Film diffuses to form diffusion region on the epitaxial layer inwards；The anti-reflection film and the electrode retaining collar are all set on the diffusion region
Side, and the electrode retaining collar is arranged around the anti-reflection film；The surface that the anti-reflection film is formed is the photosurface.
11. photodiode chip according to claim 10, it is characterised in that: the epitaxial layer includes substrate, setting
In buffer layer, the absorbed layer that is set on the buffer layer and the top layer being set on the absorbed layer on the substrate, institute
Diffusion region is stated to be spread in the top layer and the absorbed layer；The substrate further includes passivating film and back electrode layer, described blunt
Change film to be set on the top layer；The passivating film is arranged around the electrode retaining collar, and the electrode pad is set to the passivation
On film；The back electrode layer is set to below the substrate.
12. photodiode chip according to claim 11, it is characterised in that: the depth of the diffusion region be 1um~
2um, the substrate are made of the InP material for mixing S；The buffer layer is made of the N-type InP material for mixing Si and doping concentration is 5
ⅹ1018cm-3, the buffer layer with a thickness of 0.5um~2um；The absorbed layer is made of InGaAs material and doping concentration is
1ⅹ1015cm-3, the absorbed layer with a thickness of 1um~5um；The top layer is made of InP material and doping concentration is 1 X
1016cm-3, the top layer with a thickness of 0.5um~2um.
13. a kind of preparation method of photodiode chip, characterized by the following steps:
S1: using metallo-organic compound chemical gaseous phase deposition epitaxial device on substrate successively grown buffer layer, absorbed layer and
Top layer completes outer layer growth；
S2: described blunt in the vapour deposition process equipment growth of passivation film of epi-layer surface using plasma enhancing chemistry
Change film to be made of SiNx material, and thickness is greater than 5000A, refractive index is 2.0 ± 0.05；
S3: diffusion region hole is formed using the method for photoetching corrosion on the passivating film；
S4: Zn diffusion is carried out by the diffusion region hole using zinc diffusion technique, forms diffusion region, the diffusion region is spread in institute
State top layer and the absorbed layer；
S5: growing anti-reflection film in the epi-layer surface using PECVD growth technique, and the anti-reflection film is made of SiNx material,
And the anti-reflection film, with a thickness of 1500A~2000A, refractive index is 1.96 ± 0.02；
S6: electrode contact hole is formed on the anti-reflection film using lithographic wet etching process；
S7: it is deposited to form electrode layer in the epi-layer surface using thermal evaporation process；The electrode layer is Cr/Au structure, and
Cr layers with a thickness of 300A~500A, Au layers of thickness is greater than 5000A；
S8: electrode retaining collar is formed using photoetching process and electrode pad, the electrode retaining collar are located in the electrode contact hole, the electricity
Pole pad is located on the passivating film；
S9: reduction processing is carried out to the epitaxial layer back side using abrasive polishing process, thickness thinning is less than 150um, and in institute
It states the epitaxial layer back side to evaporate to form rear electrode, the rear electrode is made of Au material and thickness is greater than 5000A；
S10, single photodiode chip, the technique system for completing photodiode chip are cut into using cleavage cutting technique
Make.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110871401A (en) * | 2019-11-29 | 2020-03-10 | 湘能华磊光电股份有限公司 | Grinding and polishing method of LED chip |
| CN112687757A (en) * | 2020-12-24 | 2021-04-20 | 芯思杰技术(深圳)股份有限公司 | Photoelectric detection chip manufacturing method |
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| CN201000897Y (en) * | 2006-12-20 | 2008-01-02 | 厦门大学 | 4H-SiC avalanche photodetector |
| CN208873750U (en) * | 2018-09-29 | 2019-05-17 | 深圳市芯思杰智慧传感技术有限公司 | A kind of photodiode chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110871401A (en) * | 2019-11-29 | 2020-03-10 | 湘能华磊光电股份有限公司 | Grinding and polishing method of LED chip |
| CN112687757A (en) * | 2020-12-24 | 2021-04-20 | 芯思杰技术(深圳)股份有限公司 | Photoelectric detection chip manufacturing method |
| CN112687757B (en) * | 2020-12-24 | 2023-02-03 | 芯思杰技术(深圳)股份有限公司 | Photoelectric detection chip manufacturing method |
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