CN109148595B - Thin film transistor and preparation method thereof - Google Patents
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- CN109148595B CN109148595B CN201810913496.XA CN201810913496A CN109148595B CN 109148595 B CN109148595 B CN 109148595B CN 201810913496 A CN201810913496 A CN 201810913496A CN 109148595 B CN109148595 B CN 109148595B
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- 239000010409 thin film Substances 0.000 title claims abstract description 104
- 238000002360 preparation method Methods 0.000 title description 9
- 230000003071 parasitic effect Effects 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 12
- 230000009471 action Effects 0.000 abstract description 7
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 8
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 8
- 235000019837 monoammonium phosphate Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 235000019796 monopotassium phosphate Nutrition 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 2
- GNSKLFRGEWLPPA-ZSJDYOACSA-M potassium;dideuterio phosphate Chemical compound [K+].[2H]OP([O-])(=O)O[2H] GNSKLFRGEWLPPA-ZSJDYOACSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- BEJNERDRQOWKJM-UHFFFAOYSA-N kojic acid Chemical compound OCC1=CC(=O)C(O)=CO1 BEJNERDRQOWKJM-UHFFFAOYSA-N 0.000 description 1
- 229960004705 kojic acid Drugs 0.000 description 1
- WZNJWVWKTVETCG-UHFFFAOYSA-N kojic acid Natural products OC(=O)C(N)CN1C=CC(=O)C(O)=C1 WZNJWVWKTVETCG-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Abstract
The invention provides a thin film transistor, which comprises a grid layer, a light refraction layer arranged on the grid layer, an insulating layer arranged on the light refraction layer, an active layer arranged on the insulating layer and an active drain layer arranged on the active layer. The invention changes the refractive index of the photorefractive layer through the arrangement of the photorefractive layer and under the action of parasitic capacitance formed by the gate layer and the source drain layer, so that the incident light of the backlight source is deflected, and further the photoelectric carrier effect of the thin film transistor in an ON state and an OFF state is improved.
Description
Technical Field
The present disclosure relates to thin film transistors, and particularly to a thin film transistor for a display device and a method for manufacturing the thin film transistor.
Background
In a display device with a backlight source, a semiconductor material in a TFT backboard device area, such as A-Si, P-Si or IGZO, is sensitive to a tube, and is easy to generate photon-generated carriers to influence the electrical property.
In a thin film transistor of a conventional display device, a gate layer and an active layer are included, and the active layer includes a channel region disposed to overlap the gate layer. When the tft is in an ON state (ON state), the current of the tft is weak, and when the tft is in an OFF state (OFF state), the leakage current of the tft is large, which affects the electrical property of the tft.
Disclosure of Invention
The embodiment of the invention provides a thin film transistor for a display device and a preparation method of the thin film transistor; the technical problem that when a thin film transistor used for an existing display device is in an ON state, the current of the thin film transistor is weak, and when the thin film transistor is in an OFF state (an OFF state), the leakage current of the thin film transistor is large is solved.
An embodiment of the present invention provides a thin film transistor for a display device, including:
a substrate, a first electrode and a second electrode,
a gate layer disposed on the substrate;
the light refraction layer is arranged on the grid layer and at least covers two sides of the grid layer;
an insulating layer disposed on the light refracting layer;
an active layer disposed on the insulating layer; and
the source drain layer is arranged on the active layer;
wherein the active layer includes a channel region formed to overlap with the gate layer, the light refracting layer is for refracting incident light of a backlight source,
when the thin film transistor is in an ON state, the thin film transistor is conducted through a positive voltage, a parasitic capacitor is formed by the gate layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the light refraction layer deflects incident light of a backlight source to the channel region; when the thin film transistor is in an OFF state, the thin film transistor is closed through negative voltage, parasitic capacitance is formed between the grid layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the incident light of the backlight source is deflected out of the channel region by the light refraction layer.
In the thin film transistor of the present invention, the thickness of the photorefractive layer is N, wherein
In the thin film transistor, the light transmittance of the photorefractive layer is M, and M is more than or equal to 50%.
In the thin film transistor of the present invention, the material of the photorefractive layer is one of DKDP, ADP, LN, and LT.
The present invention also relates to another thin film transistor for a display device, comprising:
a substrate;
a light-shielding layer disposed on the substrate;
a light refracting layer disposed on the light shielding layer to cover at least both sides of the light shielding layer;
a first insulating layer disposed on the light refracting layer;
the source drain layer is arranged on the first insulating layer and positioned on two sides of the light shielding layer;
the active layer is arranged on the source drain layer and is opposite to the light shielding layer;
the second insulating layer is arranged on the active layer and covers the source drain layer; and
a gate layer disposed on the second insulating layer and facing the light-shielding layer;
wherein the active layer comprises a channel region formed by overlapping with the gate layer, the light shielding layer faces the channel region, the light refracting layer is used for refracting incident light of the backlight source,
when the thin film transistor is in an ON state, the thin film transistor is conducted through a positive voltage, a parasitic capacitor is formed by the gate layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the light refraction layer deflects incident light of a backlight source to the channel region; when the thin film transistor is in an OFF state, the thin film transistor is closed through negative voltage, parasitic capacitance is formed between the grid layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the incident light of the backlight source is deflected out of the channel region by the light refraction layer.
In another thin film transistor of the present invention, the thickness of the photorefractive layer is N, wherein
In another thin film transistor of the present invention, the light transmittance of the photorefractive layer is M, and M is not less than 50%.
In another thin film transistor of the present invention, the material of the light refracting layer is one of DKDP, ADP, LN, and LT.
The invention also relates to a preparation method of the thin film transistor for the display device, which comprises the following steps:
forming a patterned gate layer on a substrate;
forming a patterned photorefractive layer made of an optoelectronic material on the gate layer, the photorefractive layer covering at least two sides of the gate layer;
forming an insulating layer on the light refracting layer;
forming an active layer on the insulating layer;
and forming a source drain layer on the active layer.
In the method for manufacturing a thin film transistor of the present invention, the photoelectric material is an amorphous material or a single crystal material.
In the preparation method of the thin film transistor, when the photoelectric material is an amorphous material, the photorefractive layer is formed by adopting a photoetching process; when the photoelectric material is a single crystal material, the photorefractive layer is formed by adopting a laser directional induced deposition process.
In the method for manufacturing a thin film transistor of the present invention, the thickness of the photorefractive layer is N, wherein
In the preparation method of the thin film transistor, the light transmittance of the photorefractive layer is M, and M is more than or equal to 50%.
In the method for manufacturing a thin film transistor of the present invention, the photoelectric material is one of DKDP, ADP, LN, and LT.
Compared with the thin film transistor for the display device in the prior art, the thin film transistor and the preparation method of the thin film transistor change the refractive index of the light refraction layer through the arrangement of the light refraction layer under the action of the parasitic capacitance formed by the grid layer and the source drain layer, so that the incident light of the backlight source is deflected, and when the thin film transistor is in an ON state, the incident light of the backlight source is deflected under the action of the light refraction layer and is radiated to a channel region, so that the photo-generated carrier effect is enhanced, and the current amount is increased; when the thin film transistor is in an OFF state, the incident light of the backlight source deflects under the action of the light refraction layer and radiates out of the channel region, so that the effect of a photon-generated carrier is weakened, and the leakage current is reduced; the technical problems that when the thin film transistor is in an ON state (an opening state), the current of the thin film transistor is weak, and when the thin film transistor is in an OFF state (a closing state), the current leakage of the thin film transistor is large, and the electrical property of the thin film transistor is influenced in the conventional thin film transistor for the display device are solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments are briefly described below. The drawings in the following description are only some embodiments of the invention, and it will be clear to a person skilled in the art that other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic diagram of a preferred embodiment of a TFT of the present invention in the ON state;
FIG. 2 is a schematic diagram of a preferred embodiment of a TFT of the present invention in the OFF state;
FIG. 3 is a schematic structural diagram of another preferred embodiment of a TFT of the present invention;
fig. 4 is a flowchart of a preferred embodiment of a method for manufacturing a thin film transistor according to the present invention.
Detailed Description
Refer to the drawings wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the invention and should not be taken as limiting the invention with regard to other embodiments that are not detailed herein.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a thin film transistor in an ON state according to a preferred embodiment of the present invention; fig. 2 is a schematic structural view of a preferred embodiment of a thin film transistor of the present invention in an OFF state.
The thin film transistor of the present embodiment is used for a display device, and includes a substrate 11, a gate layer 12, a photorefractive layer 13, an insulating layer 14, an active layer 15, and a source-drain layer 16.
Specifically, the gate layer 12 is provided on the substrate 11; the photorefractive layer 13 is arranged on the gate layer 12 and at least covers two sides of the gate layer 12; the insulating layer 14 is provided on the photorefractive layer 13; an active layer 15 is disposed on the insulating layer 14; the source-drain layer 16 is disposed on the active layer 15.
Wherein the active layer 15 includes a channel region formed to overlap the gate electrode layer 12, and the light refracting layer 13 is made of an electro-optical material for refracting incident light of a backlight,
when the thin film transistor is in an ON state, the thin film transistor is turned ON by a positive voltage, the gate electrode layer 12 and the source drain layer 16 form a parasitic capacitance, and the refractive index of the light refracting layer 13 is changed, so that the light refracting layer 13 deflects incident light of a backlight source to a channel region; when the thin film transistor is in an OFF state, the thin film transistor is turned OFF by a negative voltage, the gate electrode layer 12 and the source-drain layer 16 form a parasitic capacitance, and the refractive index of the light refracting layer 13 is changed so that the light refracting layer 13 deflects incident light of the backlight outside the channel region.
Specifically, when the thin film transistor is in an ON state, the thin film transistor is turned ON by a positive voltage, a parasitic capacitance is formed between the gate electrode layer 12 and the source drain layer 16 and acts ON the light refraction layer 13, so that the refractive index of the light refraction layer 13 is changed, and then when incident light of a backlight source in the display device is radiated to the light refraction layer 13, refraction deflection occurs and the incident light is radiated to a channel region, so that a photo-generated carrier effect is enhanced, thereby increasing a current and improving the photo-generated carrier effect of the ON state. The gate layer 12 and the source-drain layer 16 form a parasitic capacitance, which is divided into a parasitic capacitance formed by a gate and a source and a parasitic capacitance formed by a gate and a drain.
When the thin film transistor is in an OFF state, the thin film transistor is turned OFF through negative voltage, parasitic capacitance is formed between the gate layer 12 and the source drain layer 16 and acts on the photorefractive layer 13, so that the refractive index of the photorefractive layer 13 is changed, and when incident light of a backlight source in the display device is radiated to the photorefractive layer 13, the incident light is refracted and deflected and is radiated to the outside of a channel region, the photo-generated carrier effect is weakened, the current is reduced, and the photo-generated carrier effect in the OFF state is improved.
In a preferred embodiment of the present thin film transistor, the photorefractive layer 13 has a thickness N, wherein
It is apparent that the light refracting layer 13 is interposed between the gate layer 12 and the source-drain layer 16, and therefore the thickness of the light refracting layer 13 affects the parasitic capacitance formed between the gate layer 12 and the active layer 16, and affects the refraction effect itself. For example, the larger the thickness of the light refracting layer 13, the larger the distance between the gate layer 12 and the source-drain layer 16, resulting in the weaker parasitic capacitance therebetween, while the smaller the thickness of the light refracting layer 13, the poorer the effect of refraction of light through the light refracting layer 13.
Accordingly, the virtues of parasitic capacitance and the refractive property of the light refracting layer 13 are secured, and the thickness N of the light refracting layer 13 is set to be in between
To
In the meantime. Optionally, N takes the value
And
one of them. Of course, the thickness of the light refracting layer 13 is not limited thereto, and may be, for example, larger than
Or taking a value
And the like.
In the preferred embodiment, the light refracting layer 13 has a light transmittance M of 50% or more. In order to ensure that enough light is reflected to the channel region by the incident light of the backlight source in the ON state of the present embodiment to improve the photo-induced current-carrying effect, in the present embodiment, the light transmittance M of the light refracting layer 13 is greater than or equal to 50%.
In the present preferred embodiment, the photoelectric material is optionally one of DKDP (potassium dideuterium phosphate), KDP (potassium dihydrogen phosphate), ADP (ammonium dihydrogen phosphate), LN (lithium niobate), and LT (kojic acid file), but is not limited thereto.
Referring to fig. 3, the present application also relates to another thin film transistor for a display device, which includes a substrate 21, a light shielding layer 22, a light refracting layer 23, a first insulating layer 24, a source drain layer 25, an active layer 26, a second insulating layer 27, and a gate layer 28.
Specifically, the light-shielding layer 22 is provided on the substrate 21; the light refracting layer 23 is provided on the light shielding layer 22 to cover at least both sides of the light shielding layer 22; the first insulating layer 24 is disposed on the light refracting layer 23; the source-drain layers 25 are disposed on the first insulating layer 24 and on both sides of the light-shielding layer 22; an active layer 26 disposed on the source-drain layer 25 and facing the light-shielding layer 22; a second insulating layer 27 is disposed on the active layer 26 and covers the source-drain layer 25; a gate layer 28 disposed on the second insulating layer 27 and facing the light-shielding layer 22;
wherein the active layer 26 includes a channel region formed to overlap with the gate electrode layer 28, the light shielding layer 22 faces the channel region, the light refracting layer 23 is made of an electro-optical material for refracting incident light of the backlight,
when the thin film transistor is in an ON state, the thin film transistor is turned ON by a positive voltage, the gate electrode layer 28 and the source drain layer 25 form a parasitic capacitance, and the refractive index of the light refracting layer 23 is changed, so that the light refracting layer 23 deflects incident light of the backlight source to a channel region; when the thin film transistor is in the OFF state, the thin film transistor is turned OFF by a negative voltage, the gate layer 28 and the source-drain layer 25 form a parasitic capacitance, and the refractive index of the light refracting layer 23 is changed so that the light refracting layer 23 deflects incident light of the backlight out of the channel region.
In another preferred embodiment of the thin film transistor of the present application, the photorefractive layer 23 has a thickness N, wherein
In another preferred embodiment of the thin film transistor of the present application, the light refracting layer 23 has a light transmittance M ≧ 50%.
In another preferred embodiment of the thin film transistor of the present application, the electro-optical material is one of DKDP (potassium dideuterium phosphate), KDP (potassium dihydrogen phosphate), ADP (ammonium dihydrogen phosphate), LN (lithium niobate), and LT (button acid file).
The working principle of the present embodiment is similar to or the same as that of the above-described embodiment.
Referring to fig. 4, the present application further relates to a preferred embodiment of a method for manufacturing a thin film transistor for a display device, which includes the following steps:
s1: forming a patterned gate layer on a substrate;
s2: forming a patterned photorefractive layer made of an optoelectronic material on the gate layer, the photorefractive layer covering at least two sides of the gate layer;
s3: forming an insulating layer on the light refracting layer;
s4: forming an active layer on the insulating layer;
s5: and forming a source drain layer on the active layer.
In the method for manufacturing a thin film transistor of the present invention, the photoelectric material is an amorphous material or a single crystal material.
In step S2, when the photoelectric material is an amorphous material, the photorefractive layer is formed by a photolithography process; when the photoelectric material is a single crystal material, the photorefractive layer is formed by adopting a laser directional induced deposition process.
In an embodiment of the method for manufacturing a thin film transistor, the thickness of the photorefractive layer is N, wherein
In the embodiment of the preparation method of the thin film transistor, the light transmittance of the photorefractive layer is M, and M is more than or equal to 50%.
In an embodiment of the method for producing a thin film transistor, the photoelectric material is one of DKDP, ADP, LN, and LT.
Compared with the thin film transistor for the display device in the prior art, the thin film transistor and the preparation method of the thin film transistor change the refractive index of the light refraction layer through the arrangement of the light refraction layer under the action of the parasitic capacitance formed by the grid layer and the source drain layer, so that the incident light of the backlight source is deflected, and when the thin film transistor is in an ON state, the incident light of the backlight source is deflected under the action of the light refraction layer and is radiated to a channel region, so that the photo-generated carrier effect is enhanced, and the current amount is increased; when the thin film transistor is in an OFF state, the incident light of the backlight source deflects under the action of the light refraction layer and radiates out of the channel region, so that the effect of a photon-generated carrier is weakened, and the leakage current is reduced; the technical problems that when the thin film transistor is in an ON state (an opening state), the current of the thin film transistor is weak, and when the thin film transistor is in an OFF state (a closing state), the current leakage of the thin film transistor is large, and the electrical property of the thin film transistor is influenced in the conventional thin film transistor for the display device are solved.
Although the disclosure has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. The present disclosure includes all such modifications and alterations, and is limited only by the scope of the appended claims. In addition, while a particular feature of the disclosure may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for a given or particular application. Furthermore, to the extent that the terms "includes," has, "" contains, "or variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term" comprising.
In summary, although the present invention has been disclosed in the foregoing embodiments, the serial numbers before the embodiments, such as "first" and "second", are used for convenience of description only, and do not limit the sequence of the embodiments of the present invention. Furthermore, the above embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be limited by the appended claims.
Claims (10)
1. A thin film transistor for a display device, comprising:
a substrate, a first electrode and a second electrode,
a gate layer disposed on the substrate;
the light refraction layer is arranged on the grid layer and at least covers two sides of the grid layer;
an insulating layer disposed on the light refracting layer;
an active layer disposed on the insulating layer; and
the source drain layer is arranged on the active layer;
wherein the active layer includes a channel region formed to overlap with the gate layer, the light refracting layer is for refracting incident light of a backlight source,
when the thin film transistor is in an ON state, the thin film transistor is conducted through a positive voltage, a parasitic capacitor is formed by the gate layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the light refraction layer deflects incident light of a backlight source to the channel region; when the thin film transistor is in an OFF state, the thin film transistor is closed through negative voltage, parasitic capacitance is formed between the grid layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the incident light of the backlight source is deflected out of the channel region by the light refraction layer.
2. The thin film transistor of claim 1, wherein the photorefractive layer has a thickness of N, wherein
3. The thin film transistor of claim 1, wherein the light refracting layer has a light transmittance of M ≧ 50%.
4. The thin film transistor according to claim 1, wherein a material of the light refracting layer is one of DKDP, ADP, LN, and LT.
5. A thin film transistor for a display device, comprising:
a substrate;
a light-shielding layer disposed on the substrate;
a light refracting layer disposed on the light shielding layer to cover at least both sides of the light shielding layer;
a first insulating layer disposed on the light refracting layer;
the source drain layer is arranged on the first insulating layer and positioned on two sides of the light shielding layer;
the active layer is arranged on the source drain layer and is opposite to the light shielding layer;
the second insulating layer is arranged on the active layer and covers the source drain layer; and
a gate layer disposed on the second insulating layer and facing the light-shielding layer;
wherein the active layer includes a channel region formed to overlap with the gate layer, the light refracting layer is for refracting incident light of a backlight source,
when the thin film transistor is in an ON state, the thin film transistor is conducted through a positive voltage, a parasitic capacitor is formed by the gate layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the light refraction layer deflects incident light of a backlight source to the channel region; when the thin film transistor is in an OFF state, the thin film transistor is closed through negative voltage, parasitic capacitance is formed between the grid layer and the source drain layer, and the refractive index of the light refraction layer is changed, so that the incident light of the backlight source is deflected out of the channel region by the light refraction layer.
6. The thin film transistor of claim 5, wherein the photorefractive layer has a thickness N, and wherein
7. A method for manufacturing a thin film transistor for a display device, comprising the steps of:
forming a patterned gate layer on a substrate;
forming a patterned light refracting layer made of an optoelectronic material on the gate layer, wherein the light refracting layer at least covers two sides of the gate layer and is used for refracting incident light of a backlight source;
forming an insulating layer on the light refracting layer;
forming an active layer on the insulating layer, the active layer including a channel region formed to overlap with the gate layer;
forming a source drain layer ON the active layer to form the thin film transistor, when the thin film transistor is in an ON state, turning ON the thin film transistor, forming a parasitic capacitance by the gate layer and the source drain layer, and changing the refractive index of the light refraction layer so that the light refraction layer deflects the incident light of the backlight source to the channel region; and when the thin film transistor is in an OFF state, the thin film transistor is closed, the gate layer and the source drain layer form parasitic capacitance, and the refractive index of the light refraction layer is changed, so that the light refraction layer deflects the incident light of the backlight source to the outside of the channel region.
8. The method according to claim 7, wherein the photoelectric material is an amorphous material or a single crystal material.
9. The method according to claim 8, wherein when the electro-optical material is an amorphous material, the photorefractive layer is formed by a photolithography process; when the photoelectric material is a single crystal material, the photorefractive layer is formed by adopting a laser directional induced deposition process.
10. The method of claim 7, wherein the photorefractive layer has a thickness of N, and wherein
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| US6043512A (en) * | 1996-09-06 | 2000-03-28 | Sharp Kaubushiki Kaisha | Thin film semiconductor device and method for producing the same |
| CN201867561U (en) * | 2010-11-09 | 2011-06-15 | 北京京东方光电科技有限公司 | Array substrate and liquid crystal display |
| CN106057909A (en) * | 2016-07-22 | 2016-10-26 | 京东方科技集团股份有限公司 | Film transistor, array substrate and display device |
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2018
- 2018-08-13 CN CN201810913496.XA patent/CN109148595B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043512A (en) * | 1996-09-06 | 2000-03-28 | Sharp Kaubushiki Kaisha | Thin film semiconductor device and method for producing the same |
| CN201867561U (en) * | 2010-11-09 | 2011-06-15 | 北京京东方光电科技有限公司 | Array substrate and liquid crystal display |
| CN106057909A (en) * | 2016-07-22 | 2016-10-26 | 京东方科技集团股份有限公司 | Film transistor, array substrate and display device |
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