CN109148331A - The clean method of lid, annealing device and annealing device lid - Google Patents
The clean method of lid, annealing device and annealing device lid Download PDFInfo
- Publication number
- CN109148331A CN109148331A CN201810688870.0A CN201810688870A CN109148331A CN 109148331 A CN109148331 A CN 109148331A CN 201810688870 A CN201810688870 A CN 201810688870A CN 109148331 A CN109148331 A CN 109148331A
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- Prior art keywords
- lid
- cleaning nozzle
- axis
- process container
- gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides the clean method of a kind of lid with cleaning nozzle, annealing device and annealing device lid.The lid with cleaning nozzle can remove the particle for adhering to, being stacked into lid upper surface, be able to carry out the previous particle management with high accuracy of ratio of precision.It is solved the above problems by providing a kind of lid with cleaning nozzle, which is characterized in that, comprising: lid (14) is used to carry out the opening and closing of annealing device process container;Axis (20) is set to lid (14), can rotate relative to lid (14), and the holder for being heat-treated body is kept to be placed in the top of the axis (20);Cleaning nozzle (70), it from axis in a manner of direction extends to be circumferentially arranged, with multiple gas ejection holes, clean gas is blowed from gas ejection hole towards the face of process container (4) side of lid (14), while mobile along the face of process container (4) side of lid (14) using the rotation of axis.
Description
Technical field
The present invention relates to the clean methods of the lid with cleaning nozzle, annealing device and annealing device lid.
Background technique
Implement film process, oxidation processes, DIFFUSION TREATMENT generally, as to semiconductor crystal wafer (hereinafter referred to as wafer)
Equal heat-treating apparatus, there is known vertical heat processing apparatus.The reasons such as less, vertical heat processing apparatus quilt are involved in for atmosphere
It is widely used.Vertical heat processing apparatus is provided with vertical process container in heating furnace, in the lower ending opening to process container
Wafer holder is carried on the lid that portion is opened and closed, many wafers are held in the wafer holder in rack-like, utilize lid
Rising, wafer holder is inputted into process container, carries out scheduled heat treatment.
In addition, disclose in patent document 1 it is a kind of can make after being heat-treated body and being input into process container by
It is heat-treated the promptly stable vertical heat processing apparatus of the temperature of body.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2002-334844 bulletin
Summary of the invention
Problems to be solved by the invention
But, in the process container of annealing device, there are following situations: due to it is various the main reason for, produce
Raw particle, and the particle adheres to due to self weight to lid upper surface, accumulation.In the state that particle is attached to lid upper surface,
Due to lid opening and closing when pressure oscillation or the air-flow of chamber etc. change etc., generate and be attached to of lid upper surface
Grain is rolled, and there is a possibility that adhering to wafer.
It is continued to develop in the miniaturization for the pattern that wafer is formed, therefore, if particle is attached to wafer, it is bad to become processing
A possibility that get higher.Precision prescribed is than previous particle management with high accuracy.
The solution to the problem
The lid with cleaning nozzle of a viewpoint according to the present embodiment, which is characterized in that the lid with cleaning nozzle
Body includes lid, is used to that the lower end opening portion of annealing device process container to be opened and closed;Axis is set to described
Lid can be rotated relative to the lid, be placed on the top of the axis to the holder for being heat-treated body and being kept;With
And cleaning nozzle has multiple gas ejection holes, from the gas to be circumferentially arranged in a manner of direction extends from the axis
The face of squit hole towards the process container side of the lid blows clean gas, while using the rotation of the axis along institute
The face for stating the process container side of lid is mobile.
The effect of invention
According to the disclosed lid with cleaning nozzle, the particle for adhering to, being stacked into lid upper surface can be removed, it can
Carry out the previous particle management with high accuracy of ratio of precision.
Detailed description of the invention
Fig. 1 is the skeleton diagram for indicating an example of annealing device for embodiments of the present invention.
Fig. 2 is the main portion sectional view of the annealing device of the 1st embodiment of the invention.
Fig. 3 is the cross-sectional view (A) of an example of the lid of the annealing device of the 1st embodiment of the invention, solid
Scheme (B)~(C).
Fig. 4 is the perspective view for illustrating the movement of the lid of annealing device of the 1st embodiment of the invention.
Fig. 5 is the main view for illustrating the movement of the lid of annealing device of the 1st embodiment of the invention.
Fig. 6 be indicate an example of the lid of annealing device for the 1st embodiment of the invention perspective view (A) and
Indicate the perspective view (B) of an example of axis.
Fig. 7 be indicate an example of the lid of annealing device for the 1st embodiment of the invention perspective view (A) and
Indicate the perspective view (B) of an example of axis.
Fig. 8 is the direction for indicating the gas ejection hole of the cleaning nozzle of annealing device of the 1st embodiment of the invention
An example schematic diagram (A)~(B).
Fig. 9 is the perspective view for indicating an example of the cleaning nozzle of annealing device for the 1st embodiment of the invention
(A)~(D).
Figure 10 is the perspective view for indicating an example of the lid of annealing device for the 1st embodiment of the invention.
Figure 11 is the cross-sectional view for indicating an example of the lid of annealing device for the 2nd embodiment of the invention.
Figure 12 is the perspective view (A) for indicating an example of the lid of annealing device for the 3rd embodiment of the invention
~(B).
Figure 13 is the main view (A) of the size of the cleaning nozzle of annealing device for indicating the embodiment of the present invention, side view
Scheme (B), cross-sectional view (C).
Figure 14 is figure (A)~(C) for the analog result for indicating the embodiment of the present invention.
Figure 15 is figure (A)~(C) for the analog result for indicating the embodiment of the present invention.
Figure 16 is the cross-sectional view (A) for the size of the cleaning nozzle of annealing device for indicating the embodiment of the present invention and indicates
The figure (B) of analog result.
Description of symbols
2, annealing device;4, process container;10, manifold;12, bottom plate;14, lid;14a, the 1st flow path;14at, end
Portion;14b, slot;14c, through hole;14d, recess portion;14e, metal lid;The lid of 14f, quartz system;14g, pressing plate;15,
Exhaust portion;15a, exhaust slot;15b, exhaust outlet;15c, exhaust outlet;15d, exhaust slot;16, containment member;17,91,95,
Exhaust line;18, magnetic fluid seal;20, axis;20a, the 2nd flow path;20at, end;20b, slot;22, rotating mechanism;26, it protects
Warm cylinder;26a, pillar;26b, thermal insulation board;27, boat supporting part;28, wafer boat;30, elevating mechanism;32, it is piped;34, gas
Body nozzle;36, gas vent;38, exhaust system;40, exhaust channel;42, pressure-regulating valve;44, vacuum pump;45, heating dress
It sets;46, heat insulation layer;47, protective cover;48, heating part;50, fixed cylinder;51, shell;52,53, flue;70, cleaning nozzle;
70a, gas ejection hole;70b, gas ejection hole;71,72,73,74, cleaning nozzle;90, clean gas supply source;92, quality
Flow controller;93,94, valve.
Specific embodiment
Form for carrying out the present invention is illustrated below.In addition, marking identical attached drawing to identical component etc.
It marks and omits the description.
The annealing device of embodiment is illustrated referring to Fig.1.Fig. 1 is the annealing device for indicating embodiment
The skeleton diagram of one example.
As shown in Figure 1, the cylindric process container 4 that annealing device 2 is arranged with length direction vertical.Processing is held
Device 4 by heat-resisting material, for example quartz formed.The lower end of process container 4 is kept by the manifold 10 of the formation such as stainless steel.Separately
Outside, manifold 10 is fixed in bottom plate 12.
In the opening portion of the lower end of process container 4, airtight can hermetically be opened by the containment members such as O-ring seals 16
The mode closed is equipped with the discoid lid 14 by formation such as such as stainless steels.In addition, the substantially central portion in lid 14 is passed through
It is installed with using such as magnetic fluid seal 18 with the rotatable rotary shaft 21 of airtight conditions.The lower end of the rotary shaft 21 with utilize horse
Up to etc. driving mechanisms rotation rotating mechanism 22 connect.
In the upper end of rotary shaft 21, axis 20 is installed by connecting elements 23, the top of axis 20 is provided with boat bearing
Portion 27, the wafer boat 28 as the wafer holder for keeping semiconductor crystal wafer are placed in the top of the boat supporting part 27.
In addition, being provided with the heat-preservation cylinder 26 with such as the pillar 26a and thermal insulation board 26b of quartz system around axis 20.Such as 50
~150 as be heat-treated the wafer W of body at predetermined intervals, such as 10mm between left and right every spacing be accommodated in wafer boat
28.Wafer boat 28, heat-preservation cylinder 26 and lid 14 are integrally formed and using as the elevating mechanisms 30 of such as boat elevator
It loads, unload in process container 4.
Multiple gases (not shown), which are formed with, in the side of manifold 10 imports port, it is former for being imported into process container 4
Gas (such as one or both of unstrpped gas and non-active gas) needed for expecting the film process such as gas, non-active gas
Piping 32 penetrate through process container 4 flange part 4a install.In addition, importing gas spray of the port inserted with quartz system in gas
Mouth 34 is airtightly installed in the way of being piped 32 and can be connected to gas nozzle 34 by joint members such as nuts.In general, from gas
The flow control mechanisms such as the not shown mass flow controller of gas that nozzle 34 is imported to process container 4 carry out flow control
System.In addition, only recording 1 gas nozzle 34 in Fig. 1, but more can also be arranged according to used gaseous species.
The top of process container 4 is provided with gas vent 36, exhaust system 38 and gas vent 36 link.Exhaust system
38 include the exhaust channel 40 connected with gas vent 36 and the pressure that is connected in turn with the midway of exhaust channel 40
Power adjusts valve 42 and vacuum pump 44.Can using exhaust system 38 in process container 4 atmosphere carry out pressure adjustment, simultaneously into
Row exhaust.
In the peripheral side of process container 4, be provided in a manner of surrounding process container 4 to wafer W etc. be heat-treated body into
The heating device 45 of row heating.Heating device 45 has the heat insulation layer 46 for having top for being formed as cylindric.Heat insulation layer 46 is by for example
The mixture of the lower and soft unbodied silica of thermal conductivity and aluminium oxide is formed.In addition, the inner surface of heat insulation layer 46
Outer surface relative to process container 4 is separated by a predetermined distance.Moreover, whole to cover heat insulation layer 46 in the outer peripheral surface of heat insulation layer 46
The mode of body is equipped with the protective cover 47 formed by such as stainless steel.
In the inner circumferential side of heat insulation layer 46, the winding of heating part 48 is spirally configured.Heating part 48 is wound on being for example insulated
The whole Shangdi setting of the side of layer 46, becoming being capable of whole structure in the short transverse of covering treatment container 4.I.e., at
The construction of heat insulation layer 46 is provided with for the peripheral side in heating part.
In addition, becoming can be to the temperature in process container 4 in the inside of process container 4 inserted with thermocouple (not shown)
The structure that degree (the i.e., temperature near wafer W) is measured.
(the 1st embodiment)
The annealing device of the 1st embodiment and the lid used in it with cleaning nozzle are illustrated referring to Fig. 2.
Fig. 2 is the main portion sectional view of the annealing device of the 1st embodiment, be equivalent to lid 14 in Fig. 1, heat-preservation cylinder 26 and
The part of wafer boat 28.
The lid 14 being opened and closed for the lower end opening portion to annealing device process container is by metal lid
14e and the lid 14f of quartz system are constituted, which is formed by stainless steel etc..The lid 14f's that quartz is made
The lid 14f that peripheral part is equipped with circular pressing plate 14g, metal lid 14e and quartz system utilizes the fixed parts such as screw
Part is formed as one.It is formed with the through hole 14c for vertically penetrating through the lid 14 in the central part of lid 14, utilizes magnetic through having
Property Fluid Sealing 18 can with airtight conditions rotate rotary shaft 21, the lower end of rotary shaft 21 be provided with rotating mechanism 22.
It is equipped in the upper end of rotary shaft 21 by because Cornell (イ Application U ネ Le, registered trademark) etc. has heat resistance and resistance to
The connecting elements 23 that the material of corrosion is formed is equipped with the axis 20 of quartz system on the top of connecting elements 23.Moreover, in axis 20
Top is provided with the boat supporting part 27 of quartz system, and wafer boat 28 is placed in the top of the boat supporting part 27.By in boat
The protrusion that the upper surface of ware supporting part 27 is formed engages with the recess portion formed in the lower end surface of wafer boat 28,28 quilt of wafer boat
It is supported on boat supporting part 27.In addition, protrusion and the wafer boat of above-mentioned boat supporting part 27 is omitted in Fig. 2
The expression of 28 recess portion.
Motor (not shown) as driving mechanism is fixedly disposed relative to lid 14.Motor and rotating mechanism 22 be not by
Band of diagram etc. connects, and rotating mechanism 22 is rotated about the axis using the rotation of motor.It is connected as a result, with axis 20
Boat supporting part 27 circumferentially rotates, and the wafer boat 28 on boat supporting part 27 also rotates.By so making wafer boat
28 rotations, wafer W circumferentially rotate.
The heat-preservation cylinder 26 being made of such as quartz is provided on lid 14.The heat-preservation cylinder 26 is located at than wafer boat 28
The position of bottom plate on the lower keeps the ratio heat-preservation cylinder 26 in process container 4 upper and atmosphere insulation on the lower.Heat-preservation cylinder 26 by
The pillar 26a of more verticals and multiple horizontal thermal insulation board 26b are constituted.Each pillar 26a is along the arranged circumferentially of the lid 14.Every
Hot plate 26b is formed as circular shape, with along interval apart from top to bottom and overlapped mode is arranged, thermal insulation board 26b is along branch
Column 26a is arranged in rack-like.Interval shown in Fig. 2 along thermal insulation board 26b adjacent to each other up and down is such as 7mm~25mm.This
Outside, it is also possible to thermal insulation board 26b being formed as semicircular in shape, is configured to be embedded in from the two sides of axis 20 and entirety becomes circle
Shape.
The annealing device of present embodiment is provided in a manner of extending from axis 20 to peripheral direction with multiple gases
The cleaning nozzle 70 of squit hole.The face of process container 4 side of the cleaning nozzle 70 from gas ejection hole 70a towards lid 14 blows clearly
Clean gas, while being moved using the rotation of axis 20 along the face of 4 side of the process container of lid 14.It, can as clean gas
Use the non-active gas such as such as nitrogen or argon.
(A) of Fig. 3 is the cross-sectional view of an example of the lid 14 of the annealing device of present embodiment.Conveying cleaning gas
The 1st flow path 14a and the 2nd flow path 20a of body are communicatively arranged in the inside of lid 14 and axis 20.The 1st penetrated through in lid 14
Flow path 14a and the 2nd flow path 20a penetrated through in axis 20 is connected to and connect with clean gas supply source 90, and the 2nd flow path 20a
It is connected in a manner of being connected to cleaning nozzle 70.For example multiple gas ejection hole 70a are formed in cleaning nozzle 70.Cleaning
Gas is supplied via the 1st flow path 14a and the 2nd flow path 20a to the inside of cleaning nozzle 70 from clean gas supply source 90, and from gas
The upper surface of body squit hole 70a towards lid 14 blows.It blows the clean gas come and produces gas in the adjacent upper part of lid 14
After stream, it is vented from the exhaust portion 15 formed in the upper surface of lid 14.Exhaust portion 15 be connected with exhaust line 17,95,
91.In addition it is also possible to be as needed, to be provided with to the gas flow supplied from clean gas supply source 90 to cleaning nozzle 70
The valve 93 of the opening and closing of the mass flow controller 92, progress flow path that are controlled.Alternatively, it is also possible in exhaust line 17,95,91
Flow path in setting carry out flow path opening and closing valve 94.Details is aftermentioned.
(B) of Fig. 3~(C) is the perspective view of an example of the lid 14 of the annealing device of present embodiment.
As shown in (B) of Fig. 3, it is provided in the face of 4 side of process container of lid 14 for clean gas to be exhausted
Exhaust slot 15a.Or shown in (C) of such as Fig. 3, similarly it is provided with exhaust outlet 15b.In the present embodiment, in lid
The peripheral side in the face of 14 4 side of process container is provided with exhaust slot 15a or exhaust outlet 15b.For example, exhaust line 17 etc. and row
Port 15b connection and be exhausted.In exhaust slot 15a, multiple positions in slit are formed with to be connect with exhaust line etc.
The port got up.
Fig. 4 is the perspective view for illustrating the movement of lid 14 of the annealing device of present embodiment.In annealing device
In process container 4, due to it is various the main reason for produce particle PA.Pass through the gas ejection hole from cleaning nozzle 70
The face of 70a towards 4 side of process container of lid 14 blows clean gas, at the same using the rotation of axis 20 make cleaning nozzle 70 along
The face of 4 side of process container of lid 14 is mobile, and clean gas is blowed to particle PA and makes particle PA to the peripheral side of lid 14
It is mobile.The peripheral side of lid 14 is provided with exhaust slot 15a, therefore, particle PA can be discharged to exhaust slot 15a and be gone
It removes, is able to carry out the previous particle management with high accuracy of ratio of precision.Even if substituting exhaust slot and being formed with exhaust outlet, similarly
Ground can remove particle.
Fig. 5 is the main view for illustrating the movement of lid 14 of the annealing device of present embodiment.If from cleaning nozzle 70
Gas ejection hole 70a blow clean gas, then be attached to the particle PA on lid 14 due to wall surface shear stress and to lid
14 peripheral side is mobile.If such as 70 multiple rotary of cleaning nozzle and clean gas is repeatedly blowed, particle PA reach exhaust
Near slit 15a, it is inhaled into the exhaust slot 15a being vented and is removed.
As described above, the lid with cleaning nozzle of present embodiment is set in a manner of extending from axis 20 to peripheral direction
Be equipped with the cleaning nozzle 70 with multiple gas ejection hole 70a, cleaning nozzle 70 from gas ejection hole 70a towards lid 14 from
The face of reason 4 side of container blows clean gas, while being moved using the rotation of axis 20 along the face of 4 side of process container of lid 14.
The air-flow for forming clean gas in the adjacent upper part of lid 14 as a result, makes to be attached to the particle PA of the upper surface of lid 14 to row
The exhaust portions 15 such as gas slit 15a are mobile, can be discharged to outside process container 4, be able to suppress particle PA in the upper surface of lid 14
Accumulation.It is able to maintain that the cleannes of the upper surface of lid 14, reduces the granule number on lid 14, prevent due to particle PA's
The failure rolled.In this way, the lid with cleaning nozzle according to the present embodiment and having used the lid with cleaning nozzle
Annealing device can will adhere to, be stacked into the particle PA removal of the upper surface of lid 14, be able to carry out the previous essence of ratio of precision
Spend high particle management.
(A) of Fig. 6 is the perspective view for indicating an example of lid 14 for the annealing device of present embodiment, Fig. 6's
It (B) is the perspective view for indicating an example of axis.Lid 14 has recess portion 14d corresponding with the shape of axis 20.In the recess portion
14d is equipped with axis 20, and the axis 20 of (B) of the lid 14 and Fig. 6 of (A) of Fig. 6 combines to use, but in (A) of Fig. 6~(B)
It decomposes to describe.Surface (lid 14 at the recess portion 14d of the lid 14 shown in (A) of Fig. 6, opposite with the surface of axis 20
Recess portion 14d in sidewall surfaces) be formed with become conveying clean gas flow path cricoid slot 14b.By (A) of Fig. 6
Lid 14 and the axis 20 of (B) of Fig. 6 when combining, the end 20at of the 2nd flow path 20a penetrated through in axis 20 be in always with
Cricoid slot 14b opposite state also steadily can blow clean gas from cleaning nozzle 70 in the rotation of axis 20.This
Outside, be formed with gap in such a way that axis 20 can rotate between axis 20 and the recess portion 14d of lid 14, but with the gap size phase
Than, the radial dimension of the 1st flow path 14a and the 2nd flow path 20a, depth dimensions of cricoid slot 14b etc. are set to it is sufficiently large, lead to
Crossing keeps the conductance in flow path bigger than the conductance in the gap, and the clean gas come from the supply of clean gas supply source 90 can be from cleaning
The upper surface of gas ejection hole 70a towards the lid 14 of nozzle 70 blows.A part of clean gas is held via the gap to processing
Outflow in device, but due to being micro non-active gas, thus influence to film process almost without.
(A) of Fig. 7 is the perspective view for indicating an example of lid 14 for the annealing device of present embodiment, Fig. 7's
It (B) is the perspective view for indicating an example of axis.Lid 14 has recess portion 14d corresponding with the shape of axis 20.In the recess portion
14d is equipped with axis 20, and the axis 20 of (B) of the lid 14 and Fig. 7 of (A) of Fig. 7 combines to use, but in (A) of Fig. 7~(B)
It decomposes to describe.Surface (the side wall in the recess portion 14d of lid 14 at the recess portion 14d of the lid 14 shown in (A) with Fig. 7
Surface) surface of opposite axis 20 is formed with the cricoid slot 20b for becoming the flow path of conveying clean gas.By (A) of Fig. 7
When the axis 20 of (B) of lid 14 and Fig. 7 combine, penetrate through lid 14 in the 1st flow path 14a end 14at be in always with
Cricoid slot 20b opposite state also steadily can blow clean gas from cleaning nozzle 70 in the rotation of axis 20.Scheming
It is bigger than the conductance in the gap also by the conductance made in flow path in 7 (A)~(B) embodiment, can by clean gas from
The upper surface of gas ejection hole 70a towards the lid 14 of cleaning nozzle 70 blows.
In addition, the axis 20 of the lid 14 of (A) of Fig. 6 and (B) of Fig. 7 can also be combined to use.
(A) and (B) of Fig. 8 is the court for indicating the gas ejection hole of cleaning nozzle 70 of the annealing device of present embodiment
To an example schematic diagram.For example, clean gas is from cleaning nozzle 70 with the processing with lid 14 as shown in (A) of Fig. 8
The mode that the face of 4 side of container is vertical is blown from.Or such as Fig. 8 (B) shown in, clean gas from cleaning nozzle 70 with relative to
The face of 4 side of process container of lid 14 tilts and is blown from angled mode.4 side of process container relative to lid 14
The inclined angle in face is such as 45 °.The cleaning gas vertical relative to the face of 4 side of process container of lid 14 shown in (A) of Fig. 8
Body blow can make the gas ejection hole 70a of cleaning nozzle 70 by towards formed in a manner of the direction vertical with lid 14 come
It realizes.Inclined clean gas shown in (B) of Fig. 8 relative to the face of 4 side of process container of lid 14 blows and can pass through
Make the gas ejection hole 70a of cleaning nozzle 70 relative to the face inclination of 4 side of process container of lid 14 and with being formed angledly
To realize.The inclined angle in the face of 4 side of process container relative to lid 14 is also possible to any angle other than 45 °
Degree.
The feelings vertically blowed clean gas relative to the face of 4 side of process container of lid 14 shown in (A) of Fig. 8
Tilted shown in (B) of condition and Fig. 8 and in the case that band angularly blows, generated air-flow, wall surface shear stress etc.
It is different.Preferred gas can be selected to blow condition for the removal of the particle as object.
(A) of Fig. 9~(D) is the solid for indicating an example of cleaning nozzle 70 for the annealing device of present embodiment
Figure.Cleaning nozzle 70 shown in (A) for Fig. 9, for 1 setting of axis 20, there are two cleaning nozzles 70.Two cleaning nozzles
70 are arranged in a manner of forming such as 90 ° of angle and extending from axis 20 to peripheral direction.It is cleaned shown in (B) for Fig. 9
Nozzle is provided with 4 cleaning nozzles 70 for 1 axis 20.4 cleaning nozzles 70 from axis 20 to peripheral direction is radial to prolong
The mode stretched is arranged in such a way that 4 cleaning nozzles 70 become the shape of crosswise with being respectively configured.(A) and Fig. 9 of Fig. 9
(B) each cleaning nozzle it is identical as the above-mentioned cleaning nozzle being illustrated referring to Fig. 2~Fig. 8.In this way, more by having
A cleaning nozzle 70 will more precisely can adhere to, be stacked into the particle removal of the upper surface of lid, be able to carry out ratio of precision
Previous particle management with high accuracy.In addition, cleaning nozzle 71 shown in (C) of Fig. 9 is plate.Such as cleaning nozzle 71 becomes
Hollow construction can configure many places to freedom degree with higher in the face opposite with the face of 4 side of process container of lid 14
Gas ejection hole.In addition, cleaning nozzle 72 shown in (D) of Fig. 9 is discoid.Such as cleaning nozzle 72 becomes hollow construction,
In the same manner as with the plate of (C) of Fig. 9 the case where, can have in the face opposite with the face of 4 side of process container of lid 14 compared with
Configure many places gas ejection hole to high freedom degree.On the attached drawing of (D) of Fig. 9, shows and gas ejection hole is configured to ten
The cleaning nozzle of shape.It, can be more high-precision by being so set as improving the free cleaning nozzle of the configuration of gas ejection hole
Degree ground will adhere to, be stacked into the particle removal of the upper surface of lid, be able to carry out the previous particle management with high accuracy of ratio of precision.
Figure 10 is the perspective view for indicating an example of lid 14 for the annealing device of present embodiment.Multiple gas sprays
Portal and is are nonlinearly configured at cleaning nozzle 73.It can be non-directional shape, for example curved shape by cleaning nozzle 73
To realize.For example, it is also possible to which cleaning nozzle 73 is set as curved shape.In addition, (C) and Fig. 9 of above-mentioned Fig. 9 can be opened up
(D) shown in the face of such gas ejection hole there is the width above to a certain degree, the position of gas ejection hole have from
In the case where spending, gas ejection hole can are nonlinearly be configured on the face.As shown in Figure 10, by by cleaning nozzle 73
The gas ejection hole of top end part be configured to the side towards exhaust slot 15a, can will gather the upper surface of lid 14
The particle PA efficiency of peripheral side is removed from exhaust slot 15a well.
The size of gas ejection hole 70a can be according to the size of the cleaning nozzle 70, flow velocity of clean gas, narrow from being vented
The exhaust velocity etc. of the exhaust portions such as seam 15a is adjusted.Also the size of gas ejection hole 70a can be made in inner circumferential side and peripheral side
Variation.For example, peripheral side can be reduced by increasing the size of gas ejection hole 70a, in peripheral side diminution in inner circumferential side
It is adjusted to extrusion output, prevents blowing for excessive clean gas.
As shown in figure 3, can be by being supplied with clean gas from the flow of the gas ejection hole 70a clean gas blowed
Mass flow controller 92 etc. is arranged to be adjusted in the piping that source 90 connects.Thereby, it is possible to using be adjusted to as object
The flow that the partial size of particle matches blows clean gas.In addition, as shown in figure 3, by connecting with clean gas supply source 90
The piping setting valve 93 connect, can be adjusted at the time of implementing cleaning process.By the way that valve 93, mass flow control is arranged such
Device 92 processed etc., is able to carry out the adjusting of at the time of blowing of clean gas, blowing volume.
As shown in figure 3, for the exhaust from the exhaust portions such as exhaust slot 15, it can be by the way that valve be arranged on exhaust pathway
94 carry out time adjustment.It can select the exhaust moment for example: be vented always;Implement the cleaning all specified exhaust moment every time;Right
The exhaust moment is specified along with the mode of mechanical action at the time of being placed with the lid progress load or unload of wafer boat;This
Outside, it is exhausted manually.
For the clean method of the annealing device lid of present embodiment, in the band for having above-mentioned present embodiment
In the annealing device of the lid of cleaning nozzle, blowed clearly from gas ejection hole 70a towards the face of 4 side of process container of lid 14
Clean gas, while cleaning nozzle is moved along the face of 4 side of process container of lid 14 using the rotation of axis 20.
Lower cover 14 can be unloaded from process container 4 and carry out blowing above-mentioned clean gas under atmospheric pressure while utilize
The process that the rotation of axis keeps cleaning nozzle mobile.I.e., can at the time of the maintenance of such as annealing device or heat treatment with
Time between heat treatment implements as needed.Or can using lid 14 make process container 4 lower end opening portion close and
It carries out under reduced atmosphere.In the case that pressure in process container 4 is vacuum state, the mean free path of gas molecule is just
It is elongated, it is possible to particle to be rolled, thereby it is preferred that generating the reduced atmosphere of viscous flow.Hot place is for example being carried out with vacuum state
In the case where reason, the process of the routine as the front and back for implementing heat treatment is carrying out hot place with the reduced atmosphere for generating viscous flow
In the case where reason, by the process for the routine for being set as carrying out together with heat treatment, it can maintain to manage particle always
State.
The clean method of annealing device lid according to the present embodiment can will adhere to, be stacked into lid 14
The particle of upper surface removes, and is able to carry out the previous particle management with high accuracy of ratio of precision.
(the 2nd embodiment)
The annealing device and its used lid 14 of 1 pair of the 2nd embodiment are illustrated referring to Fig.1.Figure 11 is table
Show the cross-sectional view of an example of the lid 14 of the annealing device of the 2nd embodiment.
It is in be provided with magnetic flow double-deckly in the inner side and outer side of rotary shaft 21 in the annealing device of present embodiment
Body sealing 18.The fixed cylinder 50 fixed to lid 14 is provided between magnetic fluid seal 18 on the outside and rotary shaft 21.?
The lower surface of lid 14 is fixed with shell 51 in a manner of surrounding rotary shaft 21.Be fixed with perforation shell 51 and to rotary shaft 21
The flue 52 of inside importing non-active gas.Flue 52 is connected with clean gas supply source 90, by flue 52
The flow path connected with clean gas supply source 90 is provided with the mass flow controller 92 controlled gas flow and flows
The valve 93 of the opening and closing on road.Using such construction, non-active gas is imported into rotary shaft 21, further, it is possible to make rotary shaft 21
It is rotated with airtight conditions.The connecting elements 23 for being used to form gas flow path is installed on the top of rotary shaft 21, in the connection structure
Axis 20 is installed on part 23.It is formed with the 2nd flow path 20a in axis 20, the non-active gas come is imported from flue 52 via even
The 2nd flow path 20a in gas flow path and axis 20 in connection member 23 is supplied into cleaning nozzle 70, and from gas ejection hole 70a
It is blowed to the upper surface of lid 14.In this way, the flow path of conveying clean gas is as perforation axis 20 and along the rotation axis of axis 20
Direction extends the structure of ground setting.In addition, the gas being connected to the gap of the outer peripheral surface of rotary shaft 21 and the inner peripheral surface of fixed cylinder 50
Body pipe 53 penetrates through the setting of 51 ground of shell, and flue 53 is connected with clean gas supply source 90, its flow path is provided with quality
Flow controller 92 and valve 93.It can be supplied from flue 63 to the outer peripheral surface of rotary shaft 21 with the gap of the inner peripheral surface of fixed cylinder 50
To non-active gas.In the present embodiment, without making the piping for conveying clean gas by lid 14, do not formed Fig. 6 or
The cricoid slot (14b, 20b) on lid 14 or axis 20 as shown in Figure 7, also can be steadily from clear in the rotation of axis 20
Clean nozzle 70 blows clean gas.
In addition to that mentioned above, identical as the 1st embodiment.The lid with cleaning nozzle according to the present embodiment, with the 1st
Embodiment similarly, can will adhere to, be stacked into the particle PA removal of the upper surface of lid 14, it is previous to be able to carry out ratio of precision
Particle management with high accuracy.
(the 3rd embodiment)
2 (A)~(B) says the annealing device of the 3rd embodiment and lid 14 used in it referring to Fig.1
It is bright.(A) of Figure 12~(B) is the perspective view for indicating an example of lid 14 for the annealing device of present embodiment.
Present embodiment is the variation of cleaning nozzle shown in Fig. 10, and cleaning nozzle 74 becomes in the periphery of lid 14
Shape made of the mode top end part bending that side blows clean gas to inner circumferential side.If utilizing the cleaning nozzle of present embodiment
Clean gas is blowed, then the particle PA for adhering to, being stacked into the upper surface of lid 14 can be made mobile to the inner circumferential side of lid 14.
By with the cleaning nozzle of above-mentioned shape be suitble in a manner of 4 side of process container of lid 14 face inner circumferential side such as
It is provided with exhaust outlet 15c like that shown in (A) of Figure 12.Alternatively, being provided with exhaust slot 15d as shown in (B) of Figure 12.It will be clear
Clean gas blows to particle PA and keeps particle PA mobile to the inner circumferential side of lid 14, can be from setting to the inner circumferential side of lid 14
Exhaust outlet 15c or exhaust slot 15d removes particle PA, is able to carry out the previous particle management with high accuracy of ratio of precision.
In addition to the foregoing, identical as the 1st embodiment.
(embodiment 1)
The present embodiment is related to shown in the 1st above-mentioned embodiment, particularly Fig. 8 (B), from cleaning nozzle 70 relatively
In 4 side of process container of lid 14 face inclination and band angularly blow clean gas type annealing device band
The lid of cleaning nozzle carries out sunykatuib analysis with following conditions, is calculated for air-flow streamline and wall surface shear stress.
(A) of Figure 13 is the main view for indicating the size of the cleaning nozzle being simulated in the present embodiment, Figure 13's
It (B) is side view, (C) of Figure 13 is cross-sectional view.
Diameter is arranged at intervals with as the gas ejection hole 70a of 1mm with 15mm in cleaning nozzle 70.Moreover, in cleaning nozzle
70 distance away from gas ejection hole 70a is the gas ejection hole 70b that the top of 10mm is provided with that diameter is 0.5mm.Gas spray
Portal 70a with the face of 4 side of process container relative to lid 14 in 45 ° angle, with the length direction with cleaning nozzle 70 just
The mode that the angle of friendship blows clean gas is formed.In addition, the gas ejection hole 70b on top is formed as relative to lid 14
The face of 4 side of process container in 45 ° angle and with relative to the length direction of cleaning nozzle 70 in 45 °, in terms of cleaning nozzle
To be located at the blowout of gas ejection hole 70a towards identical side and blow clean gas towards the angle of peripheral direction.
It is set as blowing under atmospheric pressure with 500 DEG C of condition with the flow velocity of 1L/min using the cleaning nozzle of above-mentioned shape
Send nitrogen.Here, being formed with exhaust slot 15a in lid 14, exhaust velocity is set as 1L/min, 10L/min, 100L/min.
In this simulation, cleaning nozzle is set as stationary state.
(A) of Figure 14~(C) is the figure for indicating the analog result of air-flow streamline of the present embodiment.From gas ejection hole 70a
The air-flow for blowing the gas come is indicated with streamline.(A) of Figure 14 be exhaust velocity be 1L/min, Figure 14 (B) be exhaust velocity
(C) for 10L/min, Figure 14 is the result that exhaust velocity is 100L/min.When exhaust velocity is 1L/min, such as Figure 14
(A) clean gas produced by boasting like that from gas ejection hole shown in generates the disorder of air-flow after having collided with lid, if will
It is 10L/min that exhaust velocity, which is increased to exhaust velocity, then the disorder of air-flow is rectified as shown in (B) of Figure 14.If into one
It is that 100L/min is confirmed then as shown in (C) of Figure 14: steady air current that exhaust velocity is increased to exhaust velocity by step, from exhaust
Slit is exhausted.Think: by making steady air current, can make to be discharged from exhaust slot particle stabilizedly.
(A) of Figure 15~(C) is the figure for indicating the analog result of wall surface shear stress of the present embodiment.(A) of Figure 15 be
It is exhaust velocity be 10L/min, Figure 15 (C) be exhaust velocity is 100L/min that exhaust velocity, which is (B) of 1L/min, Figure 15,
As a result.On attached drawing, indicate to make particle blow winged range due to shear stress with.As with shown in Figure 13, cleaning
The corresponding point of clean gas that each gas ejection hole 70a other than the gas ejection hole 70b on top of nozzle 70 is blowed,
As shown in (A)~(C) of Figure 15, in the case where exhaust velocity is the either case in 1L/min, 10L/min, 100L/min, all obtain
The point of same size.Known to: using each gas ejection hole other than the gas ejection hole 70b on top from cleaning nozzle 70
The clean gas that 70a is blowed, it is general in the case where exhaust velocity is 1L/min, 10L/min, 100L/min, it obtains stable
Wall surface shear stress.
With from shown in Figure 13, the clean gas that gas ejection hole 70b to the top of cleaning nozzle 70 blows is set
Corresponding part is any in 1L/min, 10L/min, 100L/min in exhaust velocity as shown in (A)~(C) of Figure 15
In the case of, all almost without discovery point.It is generated by the clean gas blowed from the gas ejection hole 70b on the top of cleaning nozzle 70
Wall surface shear stress ratio by being blown from the gas ejection hole 70a other than the gas ejection hole 70b on top of cleaning nozzle 70
The wall surface shear stress that the clean gas sent generates is weak.
(embodiment 2)
The present embodiment the size of the gas ejection hole of cleaning nozzle is changed as described below for embodiment 1 and
Sunykatuib analysis is carried out similarly to Example 1, and wall surface shear stress is calculated.
(A) of Figure 16 is the cross-sectional view for indicating the size of the cleaning nozzle of annealing device of the present embodiment.Relative to figure
For cleaning nozzle shown in 13 (A)~(C), make setting to the diameter of the gas ejection hole 70b on the top of cleaning nozzle 70
Expand and becomes 1mm.
(B) of Figure 16 is the simulation knot for indicating the wall surface shear stress for the case where having used the cleaning nozzle of Figure 16 (A)
The figure of fruit.It is corresponding with the clean gas that the gas ejection hole 70b on the top of cleaning nozzle 70 shown in (A) from Figure 16 is blowed
Point become it is corresponding with the clean gas blowed from each gas ejection hole 70a other than the gas ejection hole 70b on top
The same size of point.I.e., the wall surface from the gas ejection hole 70b on the top of cleaning nozzle 70 clean gas blowed is confirmed
Shear stress and the wall surface from the clean gas blowed of each gas ejection hole 70a other than the gas ejection hole 70b on top
Shear stress is equal.Known to: it, can by making setting to the enlarged-diameter of the gas ejection hole 70b on the top of cleaning nozzle 70
The range blowing winged particle and removing it broadens.
More than, form for carrying out the present invention is discussed in detail, but the present invention is not limited to the specific embodiment party
Formula, can be of the invention documented by claims purport in the range of carry out various modifications change.
In addition, in above-mentioned each embodiment, be not from cleaning nozzle blow clean gas but from cleaning nozzle into
Row exhaust, to can also suck and remove particle.It, can be by making cleaning nozzle and row for carrying out the exhaust of self-cleaning spray nozzle
Gas line stablizes the connection of the exhaust systems such as exhaust line or connection pony pump or injector etc. to cope with.By being sprayed with cleaning
Valve is set between mouth, at the time of capable of adjusting the cleaning treatment of exhaust progress of origin self-cleaning spray nozzle.
Claims (19)
1. a kind of lid with cleaning nozzle, which is characterized in that
The lid with cleaning nozzle includes
Lid is used to carry out the opening and closing of annealing device process container;
Axis is set to the lid, can rotate relative to the lid, is placed on the top of the axis to being heat-treated body
The holder kept;
Cleaning nozzle has multiple gas ejection holes, from the gas to be circumferentially arranged in a manner of direction extends from the axis
The face of body squit hole towards the process container side of the lid blows clean gas, at the same using the rotation of the axis along
The face of the process container side of the lid is mobile.
2. the lid according to claim 1 with cleaning nozzle, which is characterized in that
The face of the process container side of the lid is provided with the exhaust slot for the clean gas to be exhausted
Or exhaust outlet.
3. the lid according to claim 1 or 2 with cleaning nozzle, which is characterized in that
The flow path for conveying the clean gas is communicatively arranged in the inside of the lid and the axis.
4. the lid according to claim 3 with cleaning nozzle, which is characterized in that
The lid has the recess portion of the shape of the axis and is equipped with the axis in the recess portion, in the described recessed of the lid
Surface at portion, opposite with the surface of the axis is formed with the cricoid slot for conveying the clean gas.
5. the lid according to claim 3 with cleaning nozzle, which is characterized in that
The lid have the axis shape recess portion and the axis is installed in the recess portion, with described in the lid
The surface of the opposite axis in surface at recess portion is formed with the cricoid slot for conveying the clean gas.
6. the lid according to claim 1 or 2 with cleaning nozzle, which is characterized in that
The flow path for conveying the clean gas penetrates through the axis and is arranged with extending along the rotation axis direction of the axis.
7. with the lid of cleaning nozzle described according to claim 1~any one of 6, which is characterized in that
Vertically to blow the side of the clean gas from the face of the cleaning nozzle Yu the process container side of the lid
Formula is formed with the gas ejection hole in the cleaning nozzle.
8. with the lid of cleaning nozzle described according to claim 1~any one of 6, which is characterized in that
To tilt from the cleaning nozzle relative to the face of the process container side of the lid, band angularly blows institute
The mode for stating clean gas is formed with the gas ejection hole in the cleaning nozzle.
9. with the lid of cleaning nozzle described according to claim 1~any one of 8, which is characterized in that
The cleaning nozzle is provided with multiple.
10. with the lid of cleaning nozzle described according to claim 1~any one of 8, which is characterized in that
The cleaning nozzle is plate.
11. with the lid of cleaning nozzle described according to claim 1~any one of 8, which is characterized in that
The cleaning nozzle is discoid.
12. with the lid of cleaning nozzle described according to claim 1~any one of 11, which is characterized in that
Multiple gas ejection holes are are nonlinearly configured at the cleaning nozzle.
13. the lid according to claim 12 with cleaning nozzle, which is characterized in that
The cleaning nozzle is non-directional shape.
14. the lid according to claim 2 with cleaning nozzle, which is characterized in that
The peripheral side in the face of the process container side of the lid is provided with the exhaust slot or the exhaust outlet.
15. the lid according to claim 2 with cleaning nozzle, which is characterized in that
The inner circumferential side in the face of the process container side of the lid is provided with the exhaust slot or the exhaust outlet.
16. a kind of annealing device, which is characterized in that the annealing device includes
Process container;
Lid is used to carry out the opening and closing of the process container;
Axis is set to the lid, can rotate relative to the lid;
Holder is placed in the top of the axis, is heat-treated body for keeping;
Piping imports one or both of unstrpped gas and non-active gas to the process container;
Heating part is set to the periphery of the process container, and to remaining to the holder in the process container
Body is heat-treated to be heated;And
Cleaning nozzle has multiple gas ejection holes, from the gas to be circumferentially arranged in a manner of direction extends from the axis
The face of body squit hole towards the process container side of the lid blows clean gas, at the same using the rotation of the axis along
The face of the process container side of the lid is mobile.
17. a kind of clean method of annealing device lid, the annealing device have the lid with cleaning nozzle, the band is clear
The lid of clean nozzle includes lid, is used to carry out the opening and closing of annealing device process container;Axis is set to the lid
Body can be rotated relative to the lid, be placed on the top of the axis to the holder for being heat-treated body and being kept;And
Cleaning nozzle has multiple gas ejection holes, the annealing device to be circumferentially arranged in a manner of direction extends from the axis
It is characterized in that with the clean method of lid,
There is the clean method of the annealing device lid processing from the gas ejection hole towards the lid to hold
The processing that the face of device side blows clean gas while making the cleaning nozzle along the lid using the rotation of the axis
The mobile process in the face of container side.
18. the clean method of annealing device lid according to claim 17, which is characterized in that
The lid is unloaded from the process container and is carried out under atmospheric pressure from the gas ejection hole towards the lid
The face of the process container side blow clean gas, make the cleaning nozzle along the lid using the rotation of the axis simultaneously
The mobile process in the face of the process container side of body.
19. the clean method of annealing device lid according to claim 17, which is characterized in that
The process container is closed using the lid and is carried out in reduced atmosphere from the gas ejection hole described in
The face of the process container side of lid blows clean gas while making the cleaning nozzle along institute using the rotation of the axis
State the mobile process in the face of the process container side of lid.
Applications Claiming Priority (2)
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JP2017-125990 | 2017-06-28 | ||
JP2017125990A JP2019009370A (en) | 2017-06-28 | 2017-06-28 | Cleaning nozzle lid, heat treatment apparatus, and cleaning method of heat treatment apparatus lid |
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CN109148331A true CN109148331A (en) | 2019-01-04 |
CN109148331B CN109148331B (en) | 2023-01-10 |
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CN201810688870.0A Active CN109148331B (en) | 2017-06-28 | 2018-06-28 | Cover body, heat treatment apparatus, and method for cleaning cover body for heat treatment apparatus |
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KR (1) | KR20190001931A (en) |
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CN110813908A (en) * | 2019-11-08 | 2020-02-21 | 上海华力微电子有限公司 | Cleaning device and cleaning method |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002334844A (en) * | 2001-03-05 | 2002-11-22 | Tokyo Electron Ltd | Apparatus and method for heat treatment |
JP2003158081A (en) * | 2001-11-22 | 2003-05-30 | Hitachi Kokusai Electric Inc | Substrate processor |
JP2003297905A (en) * | 2003-05-12 | 2003-10-17 | Anelva Corp | Handling method of ring chuck in substrate processing device |
CN101101859A (en) * | 2006-07-07 | 2008-01-09 | 东京毅力科创株式会社 | Vertical heat processing apparatus and method for using the same |
CN101709360A (en) * | 2009-12-07 | 2010-05-19 | 昆明理工大学 | Atomization gas quenching device |
US20100282166A1 (en) * | 2009-05-11 | 2010-11-11 | Hitachi-Kokusai Electric Inc. | Heat treatment apparatus and method of heat treatment |
KR20130011969A (en) * | 2011-07-22 | 2013-01-30 | 도쿄엘렉트론가부시키가이샤 | Heat treatment apparatus |
TW201521104A (en) * | 2013-07-26 | 2015-06-01 | Tokyo Electron Ltd | Substrate cleaning method and substrate cleaning apparatus |
KR20150122887A (en) * | 2014-04-23 | 2015-11-03 | 주식회사 제우스 | Heat treatment apparatus for substrate |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555152A (en) * | 1991-08-23 | 1993-03-05 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus |
US6442867B2 (en) * | 2000-01-04 | 2002-09-03 | Texas Instruments Incorporated | Apparatus and method for cleaning a vertical furnace pedestal and cap |
JP2007027599A (en) * | 2005-07-21 | 2007-02-01 | Seiko Epson Corp | Semiconductor manufacturing device and method of manufacturing semiconductor device |
JP6476369B2 (en) * | 2013-03-25 | 2019-03-06 | 株式会社Kokusai Electric | Cleaning method, semiconductor device manufacturing method, substrate processing apparatus, and program |
JP6307318B2 (en) * | 2014-03-24 | 2018-04-04 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, and program |
CN105981140B (en) * | 2014-03-26 | 2018-08-31 | 株式会社日立国际电气 | The manufacturing method of substrate processing device and semiconductor devices |
JP6616258B2 (en) * | 2016-07-26 | 2019-12-04 | 株式会社Kokusai Electric | Substrate processing apparatus, lid cover, and semiconductor device manufacturing method |
-
2017
- 2017-06-28 JP JP2017125990A patent/JP2019009370A/en not_active Ceased
-
2018
- 2018-06-25 KR KR1020180072679A patent/KR20190001931A/en active IP Right Grant
- 2018-06-28 CN CN201810688870.0A patent/CN109148331B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002334844A (en) * | 2001-03-05 | 2002-11-22 | Tokyo Electron Ltd | Apparatus and method for heat treatment |
JP2003158081A (en) * | 2001-11-22 | 2003-05-30 | Hitachi Kokusai Electric Inc | Substrate processor |
JP2003297905A (en) * | 2003-05-12 | 2003-10-17 | Anelva Corp | Handling method of ring chuck in substrate processing device |
CN101101859A (en) * | 2006-07-07 | 2008-01-09 | 东京毅力科创株式会社 | Vertical heat processing apparatus and method for using the same |
US20100282166A1 (en) * | 2009-05-11 | 2010-11-11 | Hitachi-Kokusai Electric Inc. | Heat treatment apparatus and method of heat treatment |
CN101709360A (en) * | 2009-12-07 | 2010-05-19 | 昆明理工大学 | Atomization gas quenching device |
KR20130011969A (en) * | 2011-07-22 | 2013-01-30 | 도쿄엘렉트론가부시키가이샤 | Heat treatment apparatus |
TW201521104A (en) * | 2013-07-26 | 2015-06-01 | Tokyo Electron Ltd | Substrate cleaning method and substrate cleaning apparatus |
KR20150122887A (en) * | 2014-04-23 | 2015-11-03 | 주식회사 제우스 | Heat treatment apparatus for substrate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110813908A (en) * | 2019-11-08 | 2020-02-21 | 上海华力微电子有限公司 | Cleaning device and cleaning method |
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CN109148331B (en) | 2023-01-10 |
KR20190001931A (en) | 2019-01-07 |
JP2019009370A (en) | 2019-01-17 |
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