CN109137063B - Preparation method and preparation device of high-quality polycrystalline silicon thin film - Google Patents
Preparation method and preparation device of high-quality polycrystalline silicon thin film Download PDFInfo
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- CN109137063B CN109137063B CN201710499560.XA CN201710499560A CN109137063B CN 109137063 B CN109137063 B CN 109137063B CN 201710499560 A CN201710499560 A CN 201710499560A CN 109137063 B CN109137063 B CN 109137063B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
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Abstract
The invention discloses a preparation method and a preparation device of a high-quality polycrystalline silicon film, which comprises the following steps: providing a substrate, arranging an amorphous silicon thin film on the substrate, arranging a monocrystalline silicon thin film on the amorphous silicon thin film, scanning the amorphous silicon thin film through the substrate by utilizing a laser beam, scanning a part, which is in contact with the monocrystalline silicon thin film, on the amorphous silicon thin film by utilizing the laser beam firstly when the laser beam reaches the amorphous silicon thin film, taking the monocrystalline silicon thin film as a seed crystal layer, and melting and recrystallizing the amorphous silicon thin film under the action of the laser beam to form a polycrystalline silicon thin film; the quality of the polycrystalline silicon prepared by the invention approaches to that of monocrystalline silicon, and the polycrystalline silicon is suitable for the field of semiconductor material manufacturing.
Description
Technical Field
The invention relates to the field of semiconductor material manufacturing, in particular to a preparation method and a preparation device of a high-quality polycrystalline silicon film.
Background
The preparation method of the polycrystalline silicon film comprises a chemical deposition method, a high-temperature furnace annealing method, a rapid thermal annealing method, a metal induced crystallization method, a laser crystallization method and the like. Among them, the polycrystalline silicon obtained by the chemical vapor deposition method has small grain size and is difficult to meet the future development requirements of devices such as flat panel displays, photovoltaic cells and the like; the high-temperature furnace annealing method and the rapid thermal annealing method have higher overall cost and are contrary to the starting point of developing the polycrystalline silicon film; the metal induced crystallization method can introduce a large amount of metal atoms, and the electrical properties of the silicon film are damaged to a great extent.
At present, the most widely used method for preparing polycrystalline silicon thin films in the industry is a laser crystallization method, amorphous silicon is melted and recrystallized by using high energy generated by laser, and the polycrystalline silicon thin films with larger grain sizes can be obtained, so that the method provides wide application prospects for the polycrystalline silicon thin films in the fields of flat panel displays, solar cells and the like. However, the grain size of the polycrystalline silicon film obtained by laser direct scanning is not uniform, and the arrangement of the grains is irregular. In view of the above, it is desirable to provide a new method for preparing a polysilicon thin film, which can prepare a high-quality polysilicon thin film.
Disclosure of Invention
The invention overcomes the defects of the prior art, and solves the technical problems that: provided are a method and an apparatus for producing a polycrystalline silicon thin film having a quality close to that of a single crystal silicon.
In order to solve the technical problems, the invention adopts the technical scheme that: a preparation method of a high-quality polycrystalline silicon thin film comprises the following steps: s101, providing a substrate; s102, arranging an amorphous silicon film on the substrate; s103, arranging a monocrystalline silicon film on the amorphous silicon film; s104, scanning the amorphous silicon thin film through the substrate by utilizing a laser beam, wherein when the laser beam reaches the amorphous silicon thin film, the part, which is in contact with the monocrystalline silicon thin film, of the amorphous silicon thin film is firstly scanned by the laser beam; and S105, taking the monocrystalline silicon thin film as a seed crystal layer, and melting and recrystallizing the amorphous silicon thin film under the action of the laser beam to form the polycrystalline silicon thin film.
Preferably, before the amorphous silicon thin film is arranged on the substrate, SiO is deposited on the substrate2Film of, then, SiO2Depositing an amorphous silicon film on the film.
Preferably, the step of disposing a monocrystalline silicon thin film on the amorphous silicon thin film specifically includes: a single crystal thin film glass substrate is disposed on the amorphous silicon thin film, the single crystal thin film glass substrate including: the single crystal silicon thin film and the glass substrate are combined together, and the single crystal silicon thin film is tightly attached to the amorphous silicon thin film.
Preferably, the surface crystal orientation of the monocrystalline silicon thin film is {100 }.
Preferably, the substrate is a glass substrate.
Accordingly, an apparatus for preparing a high-quality polycrystalline silicon thin film, comprising: the laser scanning device comprises a substrate, wherein an amorphous silicon thin film is arranged on the substrate, a monocrystalline silicon thin film is arranged on the amorphous silicon thin film and is used as a seed crystal layer, so that the amorphous silicon thin film is melted and recrystallized under the action of laser beams to form a polycrystalline silicon thin film, the laser beams are emitted by a laser generating device, and when the laser beams penetrate through the substrate to scan the amorphous silicon thin film, the part, which is in contact with the monocrystalline silicon thin film, of the amorphous silicon thin film is firstly scanned by the laser beams.
Preferably, a layer of SiO is arranged between the substrate and the amorphous silicon film2A film.
Preferably, the amorphous silicon thin film has thereon a single crystal thin film glass substrate comprising: the monocrystalline silicon thin film and the glass substrate are combined together, and the monocrystalline silicon thin film is tightly attached to the amorphous silicon thin film.
Preferably, the surface crystal orientation of the monocrystalline silicon thin film is {100 }.
Preferably, the substrate is a glass substrate.
Compared with the prior art, the invention has the following beneficial effects:
1. the method comprises the steps of sequentially arranging an amorphous silicon film and a monocrystalline silicon film on a substrate from bottom to top, adjusting a laser generating device to enable a laser beam emitted by the laser generating device to penetrate through the substrate to scan the amorphous silicon film, taking the monocrystalline silicon film as a seed crystal layer, and melting and recrystallizing the amorphous silicon film under the action of the laser beam to form the polycrystalline silicon film, wherein in the crystallization process, when the laser beam reaches the amorphous silicon film, the part, which is in contact with the monocrystalline silicon film, of the amorphous silicon film is firstly scanned by the laser beam. Because the grain growth direction of the scanning starting area can influence the whole polycrystalline silicon direction, when the laser beam starts to melt and crystallize through the seed crystal layer and the amorphous silicon film, the growth direction of the laser beam keeps the crystal characteristics of the seed crystal, so that the crystallized polycrystalline silicon keeps the crystal orientation of the monocrystalline silicon, and the quality of the crystallized polycrystalline silicon approaches to the monocrystalline silicon.
2. Before the amorphous silicon thin film is arranged on the substrate, a layer of SiO can be deposited on the substrate2Film, then SiO2The amorphous silicon film is deposited on the film, so that impurities can be prevented from diffusing from the substrate to the amorphous silicon layer in the crystallization process to influence the crystallization quality.
3. The monocrystalline silicon film is arranged on the amorphous silicon film, and the method can be realized by arranging the monocrystalline film glass substrate on the amorphous silicon film and tightly attaching the monocrystalline silicon film of the monocrystalline film glass substrate to the amorphous silicon film. On one hand, the finished product with the monocrystalline film glass substrate on the market can be directly used, so that the process flow in the preparation process is simplified; on the other hand, the glass substrate can play a certain role in protecting and supporting the monocrystalline silicon thin film, and the monocrystalline silicon thin film can be conveniently in close contact with the amorphous silicon thin film.
4. The substrate in the invention can adopt a glass substrate, and the glass substrate has the advantages of high temperature resistance and good adhesion with a silicon film, is transparent and is more convenient for the implementation of subsequent processes.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings;
FIG. 1 is a flow chart of a method for preparing a high-quality polysilicon thin film according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an apparatus for preparing a high-quality polysilicon thin film according to an embodiment of the present invention;
FIGS. 3A-3D are flow charts illustrating the preparation of a high quality polysilicon thin film according to an embodiment of the present invention;
in the figure: 101 is a substrate, 102 is an amorphous silicon thin film, 103 is a monocrystalline silicon thin film, and 104 is SiO2The film 105 is a glass substrate and 106 is a laser beam.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments, but not all embodiments, of the present invention; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of a high-quality polycrystalline silicon thin film, which comprises the following steps of:
s101, providing a substrate 101.
And S102, arranging an amorphous silicon film 102 on the substrate 101.
And S103, arranging a monocrystalline silicon film 103 on the amorphous silicon film 102.
S104, scanning the amorphous silicon thin film 102 through the substrate 101 by using a laser beam 106, wherein when the laser beam 106 reaches the amorphous silicon thin film 102, a part of the amorphous silicon thin film 102, which is in contact with the monocrystalline silicon thin film 103, is firstly scanned by the laser beam 106.
And S105, with the monocrystalline silicon thin film 103 as a seed crystal layer, melting and recrystallizing the amorphous silicon thin film 102 under the action of the laser beam 106 to form a polycrystalline silicon thin film.
The method in the embodiment is that an amorphous silicon film 102 and a monocrystalline silicon film 103 are sequentially arranged on a substrate 101 from bottom to top, a laser generator is adjusted to enable a laser beam 106 emitted by the laser generator to pass through the substrate 101 to scan the amorphous silicon film 102, the monocrystalline silicon film 103 is used as a seed crystal layer, the amorphous silicon film 102 is melted and recrystallized under the action of the laser beam 106 to form a polycrystalline silicon film, wherein in the crystallization process, when the laser beam 106 reaches the amorphous silicon film 102, the part, in contact with the monocrystalline silicon film 103, of the amorphous silicon film 102 is firstly scanned by the laser beam 106. Since the grain growth direction of the scanning start area affects the whole polysilicon direction, when the laser beam 106 starts melting and crystallizing through the seed crystal layer and the amorphous silicon film 102, the growth direction of the laser beam maintains the crystal characteristics of the seed crystal, so that the crystallized polysilicon maintains the crystal orientation of the monocrystalline silicon, and the quality of the crystallized polysilicon approaches to the monocrystalline silicon.
In specific implementation, the thickness of the amorphous silicon thin film 102 may be 5 μm to 15 μm, and may preferably be 10 μm; the single crystal silicon thin film 103 may be of the P-type,the surface crystal orientation may be {100}, and the thickness may be 100nm to 300nm, and may preferably be 200 nm. The laser generating device can be a continuous laser, the wavelength can be 808nm, the power can be 110W-160W, and the linear light spot can be 31mm multiplied by 0.17 mm. The scanning speed of the laser generating device can be 3mm/min, and the power density can be 2.0KW/cm2。
Specifically, before the amorphous silicon thin film 102 is disposed on the substrate 101, SiO may be deposited on the substrate 1012 Film 104, then SiO2An amorphous silicon film 102 is deposited over the film 104.
In this example, SiO was deposited2The purpose of the film 104 is to prevent impurities from diffusing from the substrate to the amorphous silicon layer during crystallization, affecting the crystallization quality.
In specific implementation, the amorphous silicon thin film 102 can be deposited on the SiO by electron beam evaporation2On the membrane 104. The SiO2The thickness of the thin film 104 may be 100nm to 300nm, and may preferably be 200 nm.
Specifically, the disposing the monocrystalline silicon thin film 103 on the amorphous silicon thin film 102 may specifically include:
a single crystal thin film glass substrate is disposed on the amorphous silicon thin film 102, the single crystal thin film glass substrate comprising: the silicon single crystal display device comprises a single crystal silicon thin film 103 and a glass substrate 105, wherein the single crystal silicon thin film 103 and the glass substrate 105 are combined together, and the single crystal silicon thin film 103 is tightly attached to the amorphous silicon thin film 102.
In this embodiment, the single crystal silicon thin film 103 is provided on the amorphous silicon thin film 102, and the single crystal thin film glass substrate is provided on the amorphous silicon thin film 102, and the single crystal silicon thin film 103 of the single crystal thin film glass substrate is brought into close contact with the amorphous silicon thin film. On one hand, the finished product with the monocrystalline film glass substrate on the market can be directly used, so that the process flow in the preparation process is simplified; on the other hand, the glass substrate 105 may protect and support the monocrystalline silicon thin film 103, so that the monocrystalline silicon thin film 103 can be easily brought into close contact with the amorphous silicon thin film 102.
Specifically, the substrate 101 may be a glass substrate.
In the embodiment, the glass substrate has the advantages of high temperature resistance and good adhesion with the silicon film, is transparent and is more convenient for the implementation of subsequent processes.
More specifically, borosilicate glass may be used as the glass substrate, and since this glass has good heat resistance and optical properties, the substrate 101 may be preheated to 700 ℃ before laser crystallization to reduce thermal stress during crystallization.
The present invention also provides an apparatus for preparing a high quality polysilicon thin film, as shown in fig. 2, comprising: the laser processing device comprises a substrate 101, wherein an amorphous silicon thin film 102 is arranged on the substrate 101, a monocrystalline silicon thin film 103 is arranged on the amorphous silicon thin film 102, the monocrystalline silicon thin film 103 is used as a seed layer, the amorphous silicon thin film 102 is melted and recrystallized under the action of a laser beam 106 to form a polycrystalline silicon thin film, the laser beam 106 is emitted by a laser generating device, and when the laser beam 106 penetrates through the substrate 101 to scan the amorphous silicon thin film 102, the part, in contact with the monocrystalline silicon thin film 103, of the amorphous silicon thin film 102 is firstly scanned by the laser beam 106.
Specifically, a layer of SiO may be further provided between the substrate 101 and the amorphous silicon thin film 1022A membrane 104.
Specifically, the amorphous silicon thin film 102 has a single crystal thin film glass substrate thereon, which may include: the single crystal silicon thin film 103 and the glass substrate 105 are combined together, and the single crystal silicon thin film 103 is tightly attached to the amorphous silicon thin film 102.
Specifically, the surface crystal orientation of the single-crystal silicon thin film 103 may be {100 }.
Specifically, the substrate 101 may be a glass substrate.
The invention also provides a preparation process of the high-quality polycrystalline silicon film, which comprises the following steps:
providing a substrate 101, as shown in fig. 3A;
depositing SiO on the substrate 1012 A film 104, as shown in FIG. 3B;
in the SiO2Depositing an amorphous silicon film 102 on the film 104, as shown in FIG. 3C;
a single crystal thin film glass substrate is disposed on the amorphous silicon thin film 102, the single crystal thin film glass substrate comprising: a monocrystalline silicon thin film 103 and a glass substrate 105, wherein the monocrystalline silicon thin film 103 and the glass substrate 105 are bonded together, the monocrystalline silicon thin film 103 is tightly attached to the amorphous silicon thin film 102, and the amorphous silicon thin film 102 is scanned through the substrate 101 by using a laser beam 106, as shown in fig. 3D;
when the laser beam 106 reaches the amorphous silicon thin film 102, the part of the amorphous silicon thin film 102, which is in contact with the monocrystalline silicon thin film 103, is firstly scanned by the laser beam 106, the monocrystalline silicon thin film 103 is used as a seed layer, and the amorphous silicon thin film 102 is melted and recrystallized under the action of the laser beam 106 to form a polycrystalline silicon thin film.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. A preparation method of a high-quality polycrystalline silicon film is characterized by comprising the following steps: the method comprises the following steps:
s101, providing a substrate (101);
s102, arranging an amorphous silicon thin film (102) on the substrate (101);
s103, arranging a monocrystalline silicon thin film (103) on the amorphous silicon thin film (102);
a monocrystalline silicon thin film (103) is arranged on the amorphous silicon thin film (102), and the method specifically comprises the following steps:
disposing a single crystal thin film glass substrate on the amorphous silicon thin film (102), the single crystal thin film glass substrate comprising: the single crystal silicon thin film (103) and the glass substrate (105) are combined with each other, and the single crystal silicon thin film (103) is tightly attached to the amorphous silicon thin film (102);
s104, scanning the amorphous silicon thin film (102) through the substrate (101) by using a laser beam (106), wherein when the laser beam (106) reaches the amorphous silicon thin film (102), a part, which is in contact with the monocrystalline silicon thin film (103), on the amorphous silicon thin film (102) is firstly scanned by the laser beam (106);
and S105, with the monocrystalline silicon thin film (103) as a seed crystal layer, melting and recrystallizing the amorphous silicon thin film (102) under the action of the laser beam (106) to form a polycrystalline silicon thin film.
2. The method for preparing a high quality polysilicon thin film according to claim 1, wherein: depositing SiO on the substrate (101) before providing the amorphous silicon thin film (102) on the substrate (101)2A thin film (104) and then SiO2An amorphous silicon thin film (102) is deposited on the thin film (104).
3. The method for preparing a high quality polysilicon thin film according to claim 1, wherein: the surface crystal orientation of the monocrystalline silicon thin film (103) is {100 }.
4. The method for preparing a high quality polysilicon thin film according to claim 1, wherein: the substrate (101) is a glass substrate.
5. A preparation device of a high-quality polycrystalline silicon film is characterized in that: the method comprises the following steps: the laser scanning device comprises a substrate (101), wherein an amorphous silicon thin film (102) is arranged on the substrate (101), a monocrystalline silicon thin film (103) is arranged on the amorphous silicon thin film (102), the monocrystalline silicon thin film (103) is used as a seed layer, so that the amorphous silicon thin film (102) is melted and recrystallized under the action of a laser beam (106) to form a polycrystalline silicon thin film, the laser beam (106) is emitted by a laser generating device, and when the laser beam (106) passes through the substrate (101) to scan the amorphous silicon thin film (102), a part, which is in contact with the monocrystalline silicon thin film (103), on the amorphous silicon thin film (102) is firstly scanned by the laser beam (106);
the amorphous silicon thin film (102) has a single crystal thin film glass substrate thereon, the single crystal thin film glass substrate comprising: the single crystal silicon thin film (103) and the glass substrate (105) are combined together, and the single crystal silicon thin film (103) is tightly attached to the amorphous silicon thin film (102).
6. The apparatus for preparing a high quality polysilicon thin film according to claim 5, wherein: a layer of SiO is arranged between the substrate (101) and the amorphous silicon film (102)2A film (104).
7. The apparatus for preparing a high quality polysilicon thin film according to claim 5, wherein: the surface crystal orientation of the monocrystalline silicon thin film (103) is {100 }.
8. The apparatus for preparing a high quality polysilicon thin film according to claim 5, wherein: the substrate (101) is a glass substrate.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101005017A (en) * | 2006-01-16 | 2007-07-25 | 三星电子株式会社 | Method of forming a semiconductor thin film |
| CN101009247A (en) * | 2006-01-24 | 2007-08-01 | 三星电子株式会社 | Multilevel semiconductor device and method of manufacturing the same |
| CN101894744A (en) * | 2010-06-11 | 2010-11-24 | 南开大学 | Laser crystallizing method for polycrystalline silicon film by adopting technology of back insulating layer |
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| JP3974542B2 (en) * | 2003-03-17 | 2007-09-12 | 株式会社東芝 | Semiconductor substrate manufacturing method and semiconductor device manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101005017A (en) * | 2006-01-16 | 2007-07-25 | 三星电子株式会社 | Method of forming a semiconductor thin film |
| CN101009247A (en) * | 2006-01-24 | 2007-08-01 | 三星电子株式会社 | Multilevel semiconductor device and method of manufacturing the same |
| CN101894744A (en) * | 2010-06-11 | 2010-11-24 | 南开大学 | Laser crystallizing method for polycrystalline silicon film by adopting technology of back insulating layer |
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