CN109120178A - A kind of novel single-phase non-isolated MOSFET gird-connected inverter - Google Patents
A kind of novel single-phase non-isolated MOSFET gird-connected inverter Download PDFInfo
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- CN109120178A CN109120178A CN201811162289.1A CN201811162289A CN109120178A CN 109120178 A CN109120178 A CN 109120178A CN 201811162289 A CN201811162289 A CN 201811162289A CN 109120178 A CN109120178 A CN 109120178A
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- Prior art keywords
- switching tube
- diode
- inductance
- gird
- switch
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Abstract
The present invention provides a kind of novel single-phase non-isolated MOSFET gird-connected inverter, including six switching tubes and two diodes, by the way that two switching tubes and two diodes are added on the basis of full-bridge circuit, freewheeling period electric current is set to be not passed through body diode, common-mode voltage enough is kept constant by the equal pressure energy of the junction capacity of switching tube, is suitable for photovoltaic parallel in system.Circuit of the present invention can in effective solution inversion link as do not use transformer and caused by common mode current leakage, simultaneously because freewheeling period electric current is not passed through body diode, therefore MOSFET element can be used, reduce the turn-off power loss as caused by tail currents when as IGBT device shutdown, and SiC diode can substitute general-purpose diode, the available good inhibition of the loss of Reverse recovery.Therefore circuit of the present invention can effectively inhibit common mode leakage current, while improve the efficiency of grid-connected system.
Description
Technical field
The present invention relates to photovoltaic combining inverter fields, and in particular to a kind of novel single-phase non-isolated MOSFET is grid-connected inverse
Become device.
Background technique
Solar energy cleanliness without any pollution is very important a kind of new energy.Due to the incident photon-to-electron conversion efficiency of photovoltaic solar plate
It is lower, therefore the efficiency for improving photovoltaic combining inverter is particularly important.The common gird-connected inverter with Industrial Frequency Transformer,
Since the presence meeting of transformer is so that the efficiency of system reduces, and increases the price of inverter, simultaneously because Industrial Frequency Transformer
Volume is larger, it is difficult to install.And the grid-connected system with high frequency transformer, one-stage transfor-mation device is increased, efficiency is also difficult to mention
It rises.Therefore to improve system effectiveness, generally use transformerless gird-connected inverter, due to transless so that power grid with it is inverse
Become device and there is direct electrical connection, when, there are when distribution capacity, full-bridge inverter can generate larger between solar panels and ground
Common mode leakage current, harm is generated to human body, and inverter may be damaged.Therefore to the research of non-isolation type inverter topology by
Extensive concern is arrived.The H5 type topology of German SMA company, can efficiently solve current leakage, but due to freewheeling period
Electric current flows through body diode, therefore HF switch pipe uses IGBT, IGBT to will cause biggish since there are tail currents
Turn-off power loss.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of novel single-phase non-isolated MOSFET is proposed
Gird-connected inverter.
The novel single-phase non-isolated MOSFET gird-connected inverter of one kind provided by the invention, specifically include first switch tube,
Second switch, third switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, first diode, the second diode,
First inductance, the second inductance, direct current input capacitance.
The specific connection type of circuit of the present invention are as follows: one end of the positive and direct current input capacitance of DC bus, first open
The drain electrode for closing pipe is connected with the drain electrode of third switching tube.The other end of the cathode of DC bus and direct current input capacitance, second open
Close the source electrode connection of the source electrode and the 4th switching tube of pipe.The source electrode of first switch tube and cathode, the 5th switch of first diode
The drain electrode of pipe is connected with one end of the first inductance.The other end of first inductance is connected with one end of power grid.The sun of first diode
Pole is connect with the drain electrode of the source electrode and second switch of the 6th switching tube.The yin of the source electrode of third switching tube and the second diode
The drain electrode of pole, the 6th switching tube is connected with one end of the second inductance.The source electrode of the anode of second diode and the 5th switching tube and
The drain electrode of 4th switching tube connects.The other end of second inductance is connect with the power grid other end.
Further, the switching tube is all made of the enhanced MOSFET of N-channel.
Compared with prior art, circuit of the present invention has the advantage that are as follows: can in effective solution inversion link due to not
Common mode current leakage caused by using transformer, simultaneously because freewheeling period electric current is not passed through body diode, therefore
MOSFET element can be used, and reduce the turn-off power loss as caused by tail currents when as IGBT device shutdown, and SiC bis-
Pole pipe can substitute general-purpose diode, the available good inhibition of the loss of Reverse recovery.Circuit of the present invention can be effective
Inhibit common mode leakage current, while improving the efficiency of grid-connected system.
Detailed description of the invention
Fig. 1 is a kind of novel single-phase non-isolated MOSFET gird-connected inverter topological diagram.
Fig. 2 a~2d is circuit modal graph in network voltage positive-negative half-cycle (wherein with respect to Fig. 1 component lacked and connecting line
For off state).
Fig. 3 is each switching tube drive signal waveform in embodiment.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing and example, but protection scope of the present invention is not
It is limited to this.If being that those skilled in the art can refer to it is noted that having the process or symbol of not special detailed description below
The prior art understand or realize.
For Basic Topological of the invention as shown in Figure 1, for easy analysis, the device in circuit structure is accordingly to be regarded as ideal
Device.
The novel single-phase non-isolated MOSFET gird-connected inverter of one kind provided by the invention, specifically includes first switch tube
S1, second switch S2, third switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, first diode
VD1, the second diode VD2, the first inductance L1, the second inductance L2, direct current input capacitance Cdc。
The specific connection type of circuit of the present invention are as follows: anode and the direct current input capacitance C of DC busdcOne end, first
Switching tube S1Drain electrode and third switching tube S3Drain electrode connection.The cathode and direct current input capacitance C of DC busdcIt is another
End, second switch S2Source electrode and the 4th switching tube S4Source electrode connection.First switch tube S1Source electrode and first diode
VD1Cathode, the 5th switching tube S5Drain electrode and the first inductance L1One end connection.First inductance L1The other end and power grid
One end is connected.First diode VD1Anode and the 6th switching tube S6Source electrode and second switch S2Drain electrode connection.Third
Switching tube S3Source electrode and the second diode VD2Cathode, the 6th switching tube S6Drain electrode and the second inductance L2One end connection.
Second diode VD2Anode and the 5th switching tube S5Source electrode and the 4th switching tube S4Drain electrode connection.Second inductance L2It is another
One end is connect with the power grid other end.PV Cell indicates photovoltaic cell in figure.
Fig. 2 a~2d is circuit modal graph in network voltage positive-negative half-cycle, in order to enable circuit expression is more clear, wherein
The component and connecting line that opposite Fig. 1 lacks are off state.
(1) in the positive half cycle of network voltage, circuit is as shown in Figure 2 a in the modal graph in this stage, first switch tube S1With
Two switching tube S2It simultaneously turns on, the 6th switching tube S6Conducting, grid-connected current flow through first switch tube S1, the first inductance L1, power grid,
Second inductance L2, the 6th switching tube S6, second switch S2It powers to power grid, bridge arm output voltage is UAB=+UDC.Bridge arm output
A point is U to the voltage of DC bus negative terminal NAN=UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0, institute
With
(2) freewheeling period, circuit is as shown in Figure 2 b in the modal graph in this stage, first switch tube S1Conducting and second switch
Pipe S2It simultaneously turns off, the 6th switching tube S6With first diode VD1Conducting, electric current flow through the first inductance L1, power grid, the second inductance
L2, the 6th switching tube S6, first diode VD1Afterflow, bridge arm output voltage are UAB=0.Due to first switch tube S1It is opened with second
Close pipe S2Shutdown, utilizes first switch tube S1With second switch S2Junction capacity realization is pressed, and bridge arm exports A point to DC bus
The voltage of negative terminal N is UAN=0.5UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0.5UDC, so
(3) in the negative half period of network voltage, circuit is as shown in Figure 2 c in the modal graph in this stage, third switching tube S3 and
Four switching tube S4It simultaneously turns on, the 5th switching tube S5Conducting, grid-connected current flow through third switching tube S3, the second inductance L2, power grid,
First inductance L1, the 5th switching tube S5, the 4th switching tube S4It powers to power grid, bridge arm output voltage is UAB=-UDC.Bridge arm output
A point is U to the voltage of DC bus negative terminal NAN=0, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=UDC, institute
With
(4) freewheeling period, circuit is as shown in Figure 2 d in the modal graph in this stage, third switching tube S3 and the 4th switching tube S4
It simultaneously turns off, the 5th switching tube S5With the second diode VD2Conducting, electric current flow through the second inductance L2, power grid, the first inductance L1,
Five switching tube S5, the second diode VD2Afterflow, bridge arm output voltage are UAB=0.Due to third switching tube S3 and the 4th switching tube
S4Shutdown, utilizes third switching tube S3 and the 4th switching tube S4Junction capacity realization is pressed, and bridge arm exports A point to DC bus negative terminal N
Voltage be UAN=0.5UDC, it is U to the voltage of DC bus negative terminal N that bridge arm, which exports B point,BN=0.5UDC, so
As the above analysis, common-mode voltage Ucm=0.5UDCIt keeps constant.Therefore, common mode leakage current can obtain very well
Inhibition.Simultaneously because freewheeling period electric current is not passed through body diode, therefore MOSFET element can be used, reduce due to
The turn-off power loss as caused by tail currents when IGBT device turns off, and SiC diode can substitute general-purpose diode, it is reversed extensive
The available good inhibition of multiple loss.Therefore circuit of the present invention can effectively inhibit common mode leakage current, while improve simultaneously
The efficiency of net electricity generation system.
Claims (3)
1. a kind of novel single-phase non-isolated MOSFET gird-connected inverter, it is characterised in that: including first switch tube (S1), second
Switching tube (S2), third switching tube (S3), the 4th switching tube (S4), the 5th switching tube (S5), the 6th switching tube (S6), the one or two pole
Manage (VD1), the second diode (VD2), the first inductance (L1), the second inductance (L2) and direct current input capacitance (Cdc).
2. a kind of novel single-phase non-isolated MOSFET gird-connected inverter according to claim 1, it is characterised in that: direct current is female
Anode and the direct current input capacitance (C of linedc) one end, first switch tube (S1) drain electrode and third switching tube (S3) drain electrode connect
It connects；The cathode and direct current input capacitance (C of DC busdc) the other end, second switch (S2) source electrode and the 4th switching tube
(S4) source electrode connection；First switch tube (S1) source electrode and first diode (VD1) cathode, the 5th switching tube (S5) leakage
Pole and the first inductance (L1) one end connection；First inductance (L1) the other end be connected with one end of power grid；First diode
(VD1) anode and the 6th switching tube (S6) source electrode and second switch (S2) drain electrode connection；Third switching tube (S3) source
Pole and the second diode (VD2) cathode, the 6th switching tube (S6) drain electrode and the second inductance (L2) one end connection；Two or two
Pole pipe (VD2) anode and the 5th switching tube (S5) source electrode and the 4th switching tube (S4) drain electrode connection；Second inductance (L2)
The other end is connect with the power grid other end.
3. the novel single-phase non-isolated MOSFET gird-connected inverter of one kind according to claim 2, it is characterised in that: described
Switching tube is all made of the enhanced MOSFET of N-channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811162289.1A CN109120178A (en) | 2018-09-30 | 2018-09-30 | A kind of novel single-phase non-isolated MOSFET gird-connected inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811162289.1A CN109120178A (en) | 2018-09-30 | 2018-09-30 | A kind of novel single-phase non-isolated MOSFET gird-connected inverter |
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| CN109120178A true CN109120178A (en) | 2019-01-01 |
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| CN201811162289.1A Pending CN109120178A (en) | 2018-09-30 | 2018-09-30 | A kind of novel single-phase non-isolated MOSFET gird-connected inverter |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104539180A (en) * | 2014-12-08 | 2015-04-22 | 江苏大学 | Single-phase transformer-free inverter capable of reducing system leak current |
| CN104967350A (en) * | 2015-07-20 | 2015-10-07 | 安徽大学 | High-efficiency H7-type single-phase non-isolated grid-connected inverter |
| CN105186914A (en) * | 2015-08-14 | 2015-12-23 | 安徽大学 | Novel H6 single-phase non-isolation grid-connected inverter |
| CN105186912A (en) * | 2015-09-28 | 2015-12-23 | 河海大学 | Two-stage non-isolated full-bridge grid-connected inverter |
-
2018
- 2018-09-30 CN CN201811162289.1A patent/CN109120178A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104539180A (en) * | 2014-12-08 | 2015-04-22 | 江苏大学 | Single-phase transformer-free inverter capable of reducing system leak current |
| CN104967350A (en) * | 2015-07-20 | 2015-10-07 | 安徽大学 | High-efficiency H7-type single-phase non-isolated grid-connected inverter |
| CN105186914A (en) * | 2015-08-14 | 2015-12-23 | 安徽大学 | Novel H6 single-phase non-isolation grid-connected inverter |
| CN105186912A (en) * | 2015-09-28 | 2015-12-23 | 河海大学 | Two-stage non-isolated full-bridge grid-connected inverter |
Non-Patent Citations (1)
| Title |
|---|
| MONIRUL ISLAM等: "H6-type transformerless single-phase inverter for grid-tied photovoltaic system", 《IET POWER ELECTRONICS》 * |
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Application publication date: 20190101 |