CN109119527A - A kind of semiconductor material and its preparation method and application - Google Patents
A kind of semiconductor material and its preparation method and application Download PDFInfo
- Publication number
- CN109119527A CN109119527A CN201710481771.0A CN201710481771A CN109119527A CN 109119527 A CN109119527 A CN 109119527A CN 201710481771 A CN201710481771 A CN 201710481771A CN 109119527 A CN109119527 A CN 109119527A
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- temperature
- chain
- method described
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The present invention provides a kind of semiconductor material and its preparation method and application, the chemical general formula of the semiconductor material are as follows: M9Sn3X15, wherein one or more of M Ca, Sr and Ba, one or more of X S, Se and Te；The crystal structure of the semiconductor material belongs to hexagonal crystal system, space group PSpace group number is 188, and crystal structure is along c-axis direction by the SnX of trimerizing6Octahedron is connected by face sharing mode, is in one-dimensional catenary structure；And a//b plane is by SnX6Chain forms triangular crystal lattice, arranged in parallel between chain and chain, and keeping length is the distance of lattice constant a.The one-dimension of semiconductor material crystal structure of the invention has very high potential in terms of improving thermoelectric conversion efficiency.Preparation method of the invention not only optimizes preparation condition, but also technical process is simple, easy to operate, and preparation parameter is easily controllable, reproducible, can be combined to scale.The semiconductor material can be used for the preparation of thermoelectric conversion equipment.
Description
Technical field
The present invention relates to a kind of semiconductor materials and its preparation method and application.
Background technique
Instantly, the potential application due to thermoelectric material in energy conversion field, research are widely paid close attention to.Thermoelectricity material
Material has some characteristic features, if band gap is for 0.1-0.6eV, high lattice symmetry and comprising reassembling into element.Hair at present
The material of existing highest thermoelectric figure of merit is SnSe.Therefore, in order to further explore the thermoelectricity material with higher conversion efficiency of thermoelectric
Material, people have conducted extensive research around the chalcogenide (alkaline-earth metal: Sn: chalcogen) that ternary component includes Sn, such as
Ba2SnTe5、Ba2SnSe5、Ba7Sn3Se13、Sr2SnSe5And Sr4Sn2Se9Deng.
Still need a kind of novel thermoelectricity candidate material with very big application potential in the prior art.
Summary of the invention
Therefore, it is an object of the present invention to provide a kind of semiconductor material, crystal structure is different from the prior art
Semiconductor material has one-dimensional characteristic, has very high potential in terms of improving thermoelectric conversion efficiency, can be used for preparing thermoelectric conversion
Equipment.
It is a further object to provide the preparation methods of semiconductor material of the invention.
A further object of the present invention is to provide the purposes of semiconductor material of the invention.
The purpose of the present invention is achieved through the following technical solutions.
The present inventor by largely investigation it was unexpectedly found that, the dimension for reducing semiconductor material can be improved half
The thermoelectricity capability of conductor material.
On the one hand, the present invention provides a kind of semiconductor material, chemical general formula are as follows: M9Sn3X15, wherein M Ca, Sr and
One or more of one or more of Ba, X S, Se and Te；The crystal structure of the semiconductor material belongs to hexagonal crystal
System, space group areSpace group number is 188, and crystal structure is along c-axis direction by the SnX of trimerizing6Octahedron passes through
Sharing mode connection in face is in one-dimensional catenary structure；And a//b plane is by SnX6Chain forms triangular crystal lattice, parallel between chain and chain
Column, keeping length is the distance of lattice constant a.
On the other hand, the present invention provides a kind of method for preparing semiconductor material of the present invention, comprising the following steps:
(1) preparation of presoma MX: by metal M particle and X powder according to stoichiometric ratio M:X in high-purity inert atmosphere
=1:1 is simply mixed, and is mixed object and is placed in ceramic vessel；Then the ceramic vessel comprising said mixture is set
In the quartz ampoule of condition of high vacuum degree, sealing；Quartz ampoule is finally heated to 400~800 DEG C, preferably 700 DEG C, heat preservation 5~80 is small
When, preferably 20 hours；
(2) by presoma MX obtained in above-mentioned steps (1), metal Sn powder and X powder according to molar ratio MX:Sn:X=3:1:
2 uniformly mixing, are then pressed into the cylinder with required diameter and height by tablet press machine；
(3) cylinder obtained in step (2) is placed in cubic hinge press, pressure in press is raised to 3.0~20GPa；
(4) after the pressure in step (3) is stablized, pressure built-in temperature is raised to 900~1500 DEG C and keeps the temperature 10~120 points
Clock；
(5) to the end of heat preservation in step (4), pressure built-in temperature is reduced to room temperature, slow release pressure can be obtained cylinder
Sample M9Sn3X15；
Wherein, in above-mentioned steps, one or more of M Ca, Sr and Ba, one or more of X S, Se and Te.
Preferably, high-purity inert atmosphere described in step (1) is argon atmosphere；And/or the condition of high vacuum degree is Pa < 10- 3Pa。
Preferably, the diameter of cylinder described in step (2) is 1.5~8mm, is highly 2~5mm.
Preferably, the rate boosted in step (3) is 0.5~2GPa/min, and pressure is preferably raised to 5.5GPa.
Preferably, the rate to heat up in step (4) is 100~400 DEG C/min, and final temperature is 1000~1500 DEG C, excellent
1200-1400 DEG C is selected, soaking time 40-120min, preferably 40-60min.
Preferably, the rate released stress in step (5) is 0.3~1.0GPa/min.
Another aspect, the present invention provides semiconductor materials of the present invention to prepare the use in thermoelectric conversion equipment
On the way.
Semiconductor material M of the invention9Sn3X15(wherein, one or more of M Ca, Sr and Ba, X S, Se and Te
One or more of) crystal structure belong to hexagonal crystal system, space group isIts crystal structure is along c-axis
Direction by trimerizing SnX6Octahedron is connected by face sharing mode, is in one-dimensional catenary structure；And a//b plane is by these
Chain forms triangular crystal lattice, and the distance between chain is lattice constant a, has apparent one-dimensional characteristic.The semiconductor material not only with
The compound for studying the Sn of extensive sulfur family at present is starting point, and the one-dimension of its crystal structure is improving thermoelectric conversion effect
There is very high potential in terms of rate.The present invention prepares semiconductor material using high temperature and high pressure method, not only optimizes preparation condition, and
And technical process is simple, and easy to operate, preparation parameter is easily controllable, and it is reproducible, it can be combined to scale.It is provided by the invention
Semiconductor material can be used for preparing thermoelectric conversion equipment.
Detailed description of the invention
Hereinafter, carrying out the embodiment that the present invention will be described in detail in conjunction with attached drawing, in which:
Fig. 1 shows Ba in the embodiment of the present invention 19Sn3Se15The X ray diffracting spectrum of semiconductor material.
Fig. 2 shows Ba in the embodiment of the present invention 19Sn3Se15The X ray diffracting spectrum experiment value of semiconductor material and quasi-
The comparison result of conjunction value.
Fig. 3 shows Ba in the embodiment of the present invention 19Sn3Se15The resistance test result of semiconductor material.In figure, T is indicated
Temperature, ρ indicate resistivity, and Eg indicates the forbidden bandwidth of semiconductor.
Fig. 4 shows Ba in the embodiment of the present invention 19Sn3Se15The specific heat test result of semiconductor material.In figure, T is indicated
Temperature, C indicate that capacitor, β indicate phonon specific heat coefficient.
Fig. 5 shows Ba of the present invention9Sn3(Te1-xSex)15(x=0-1) conductivity of series of samples, Seebeck coefficient and power
Coefficient with component x variation.
Fig. 6 shows the Ba of the embodiment of the present invention 1 drawn based on X-ray powder diffraction and single crystal diffraction9Sn3Se15Or
The Ba of person's embodiment 29Sn3Te15Crystal structure schematic diagram.
Specific embodiment
The present invention will be further described combined with specific embodiments below, following embodiments be merely to illustrate the present invention and
Not limitation of the present invention.
Experimental implementation in following embodiments is unless otherwise instructed routine operation.
Embodiment 1:Ba9Sn3Se15
It is first that metal Ba particle and Se powder is simply mixed according to stoichiometric ratio Ba:Se=1:1 in high-purity argon gas atmosphere
It closes, is placed in ceramic vessel；The ceramic vessel is placed in condition of high vacuum degree (Pa < 10-3) quartz ampoule in, sealing, be heated to 700
DEG C, heat preservation 20h obtains BaSe powder.Then by obtained BaSe powder, commercialized metal Sn powder and Se powder according to molar ratio
BaSe:Sn:Se=3:1:2 is uniformly mixed, and is pressed into diameter 6mm by tablet press machine, is highly the cylinder of 3mm.It finally will be resulting
Cylinder is placed in cubic hinge press, and pressure is raised to 5.5Gpa according to 1.2GPa/min, and temperature is raised to 1400 according to 300 DEG C/min
DEG C, keep the temperature 40min.After keeping the temperature, press temperature is reduced to room temperature, and slow release pressure can be obtained cylindrical sample
Ba9Sn3Se15。
Through the measurement (as shown in Figure 1) of single crystal diffraction and X-ray powder diffraction, semiconductor Ba9Sn3Se15Crystal structure category
In hexagonal crystal system, space group isIts crystal structure, along c-axis direction by the SnSe of trimerizing6Octahedron is shared by face
Mode connects, and is in one-dimensional catenary structure；And a//b plane forms triangular crystal lattice by these chains, the distance between chain is lattice constant
A has apparent one-dimensional characteristic (see Fig. 6).Its lattice parameter is
The X ray diffracting spectrum and resistance of measurement gained sample, the result is shown in Figure 1-3.Powder x-ray diffraction experiment shows
Sample is single-phase, chemical formula Ba9Sn3Se15.The lattice parameter a value obtained according to its structure refinement is sufficiently large, guarantees one
The independence between chain is tieed up, further determines that it for one-dimentional structure.Resistance test shows that the band gap of the compound of its Se is
0.5eV or so, the bandwidth of semiconductor meet thermoelectric material requirement.Show (as shown in Figure 4) than Thermal test, the material
Thermal conductivity is mainly contributed by phonon.Therefore, Ba9Sn3Se15It can be used for preparing thermoelectric conversion equipment, and due to its crystal structure
There is very high potential with one-dimensional characteristic, thus in terms of improving thermoelectric conversion efficiency, will be a kind of potential thermoelectric applications material
Material.
Embodiment 2:Ba9Sn3Te15
It is first that metal Ba particle and Te powder is simply mixed according to stoichiometric ratio Ba:Te=1:1 in high-purity argon gas atmosphere
It closes, is placed in ceramic vessel；The ceramic vessel is placed in condition of high vacuum degree (Pa < 10-3) quartz ampoule in, sealing, be heated to 700
DEG C, heat preservation 20h obtains BaTe powder.Then by obtained BaTe powder, commercialized metal Sn powder and Te powder according to molar ratio
BaTe:Sn:Te=3:1:2 is uniformly mixed, and is pressed into diameter 6mm by tablet press machine, is highly the cylinder of 3mm.It finally will be resulting
Cylinder is placed in cubic hinge press, and pressure is raised to 5.5Gpa according to 1.5GPa/min, and temperature is raised to 1200 DEG C according to 300K/min,
Keep the temperature 60min.After keeping the temperature, press temperature is reduced to room temperature, and slow release pressure can be obtained cylindrical sample
Ba9Sn3Te15。
It is measured through single crystal diffraction and X-ray powder diffraction, semiconductor Ba9Sn3Te15Crystal structure belong to hexagonal crystal system, it is empty
Between group beIts crystal structure, along c-axis direction by the SnTe of trimerizing6Octahedron is connected by face sharing mode
It connects, is in one-dimensional catenary structure；And a//b plane forms triangular crystal lattice by these chains, the distance between chain is lattice constant a, is had
Apparent one-dimensional characteristic (as shown in Figure 6).Its lattice parameter is
Semiconductor material of the present invention is not only in the compound of Sn of the current higher sulfur family of thermoelectric conversion efficiency
A kind of new material, and its one-dimentional structure in terms of improving thermoelectric conversion efficiency have very high potential.Inventor for the first time will be upper
The key factor for stating raising thermoelectric figure of merit is combined together, and prepared semiconductor material can be used for preparing thermoelectric conversion equipment,
And the application and research in thermoelectricity field will have great potentiality.
Embodiment 3:Ba9Sn3(Se0.6Te0.4)15
It is first that metal Ba particle and Se powder is simply mixed according to stoichiometric ratio Ba:Se=1:1 in high-purity argon gas atmosphere
It closes, is placed in ceramic vessel；The ceramic vessel is placed in condition of high vacuum degree (Pa < 10-3) quartz ampoule in, sealing, be heated to 700
DEG C, heat preservation 20h obtains BaSe powder.Then by obtained BaSe powder, commercialized metal Sn powder and Te powder according to molar ratio
BaSe:Sn:Te=3:1:2 is uniformly mixed, and is pressed into diameter 6mm by tablet press machine, is highly the cylinder of 3mm.It finally will be resulting
Cylinder is placed in cubic hinge press, and pressure is raised to 5.5Gpa according to 1.2GPa/min, and temperature is raised to 1400 according to 300 DEG C/min
DEG C, keep the temperature 40min.After keeping the temperature, press temperature is reduced to room temperature, and slow release pressure can be obtained cylindrical sample Ba9Sn3
(Se0.6Te0.4)15。
It is measured through single crystal diffraction and X-ray powder diffraction, semiconductor Ba9Sn3(Se0.6Te0.4)15Crystal structure belong to six
Prismatic crystal system, space group areIts crystal structure, along c-axis direction by the SnSe/Te of trimerizing6Octahedron is shared by face
Mode connects, and is in one-dimensional catenary structure；And a//b plane forms triangular crystal lattice by these chains, the distance between chain is lattice constant
A has apparent one-dimensional characteristic (see Fig. 6).Its lattice parameter is
Powder x-ray diffraction experiment shows that sample is single-phase, chemical formula Ba9Sn3(Se0.6Te0.4)15.According to its knot
The lattice parameter a value that structure refine obtains is sufficiently large, guarantees the independence between its one-dimensional chain, further determines that it for one-dimensional knot
Structure.Resistance test shows that the band gap of the compound of its Se is 0.37eV or so, gradually replaces Se with Te, resistance is substantially reduced, electricity
Conductance increases (as shown in Figure 5), and the bandwidth of semiconductor meets thermoelectric material requirement.Therefore, Ba9Sn3(Se0.6Te0.4)15
It can be used for preparing thermoelectric conversion equipment, and have since it is with one-dimensional characteristic, thus in terms of improving thermoelectric conversion efficiency
Very high potential will be a kind of potential thermoelectric applications material.
Claims (10)
1. a kind of semiconductor material, chemical general formula are as follows: M9Sn3X15, wherein one or more of M Ca, Sr and Ba, X are
S, one or more of Se and Te；The crystal structure of the semiconductor material belongs to hexagonal crystal system, and space group isIt is empty
Between group number be 188, crystal structure is along c-axis direction by the SnX of trimerizing6Octahedron is connected by face sharing mode, is in one
Tie up chain structure；And a//b plane is by SnX6Chain forms triangular crystal lattice, arranged in parallel between chain and chain, and keeping length is that lattice is normal
The distance of number a.
2. a kind of method for preparing semiconductor material described in claim 1, comprising the following steps:
(1) preparation of presoma MX: by metal M particle and X powder according to stoichiometric ratio M:X=1 in high-purity inert atmosphere:
1 is simply mixed, and is mixed object and is placed in ceramic vessel；Then the ceramic vessel comprising said mixture is placed in height
In the quartz ampoule of vacuum degree, sealing；Quartz ampoule is finally heated to 400~800 DEG C, preferably 700 DEG C, keeps the temperature 5~80 hours, it is excellent
It selects 20 hours；
(2) MX obtained in above-mentioned steps (1), metal Sn powder and X powder are uniformly mixed according to molar ratio MX:Sn:X=3:1:2,
Then the cylinder with required diameter and height is pressed by tablet press machine；
(3) cylinder obtained in step (2) is placed in press, pressure in press is raised to 3.0~20GPa；
(4) after the pressure in step (3) is stablized, pressure built-in temperature is increased to 900~1500 DEG C and keeps the temperature 10~120 points
Clock；
(5) to the end of heat preservation in step (4), pressure built-in temperature is reduced to room temperature, slow release pressure can be obtained cylindrical sample
M9Sn3X15；
Wherein, in above-mentioned steps, one or more of M Ca, Sr and Ba, one or more of X S, Se and Te.
3. according to the method described in claim 2, wherein, high-purity inert atmosphere described in step (1) is argon atmosphere；And/or
The condition of high vacuum degree is Pa < 10-3Pa。
4. according to the method described in claim 2, wherein, it is highly 2 that the diameter of cylinder described in step (2), which is 1.5~8mm,
~5mm.
5. according to the method described in claim 2, wherein, the rate boosted in step (3) is 0.5~2GPa/min, preferably
Pressure is raised to 5.5GPa.
6. according to the method described in claim 2, wherein, the rate to heat up in step (4) is 100~400 DEG C/min, most final temperature
Degree is 1000~1500 DEG C, soaking time 40-120min.
7. according to the method described in claim 6, wherein, the final temperature is 1200-1400 DEG C.
8. according to the method described in claim 6, wherein, the soaking time is 40-60min.
9. according to the method described in claim 2, wherein, the rate released stress in step (5) is 0.3~1.0GPa/min.
10. semiconductor material according to claim 1 is preparing the purposes in thermoelectric conversion equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710481771.0A CN109119527A (en) | 2017-06-22 | 2017-06-22 | A kind of semiconductor material and its preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710481771.0A CN109119527A (en) | 2017-06-22 | 2017-06-22 | A kind of semiconductor material and its preparation method and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109119527A true CN109119527A (en) | 2019-01-01 |
Family
ID=64732858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710481771.0A Pending CN109119527A (en) | 2017-06-22 | 2017-06-22 | A kind of semiconductor material and its preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109119527A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113481420A (en) * | 2021-07-12 | 2021-10-08 | 河南工业大学 | Ferromagnetic metal material and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132430A (en) * | 2008-08-11 | 2011-07-20 | 三星电子株式会社 | Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material |
| CN106711317A (en) * | 2016-11-22 | 2017-05-24 | 同济大学 | Sulfur-group lead-compound thermoelectric material and preparation method thereof |
-
2017
- 2017-06-22 CN CN201710481771.0A patent/CN109119527A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132430A (en) * | 2008-08-11 | 2011-07-20 | 三星电子株式会社 | Anisotropically elongated thermoelectric material, process for preparing the same, and device comprising the material |
| CN106711317A (en) * | 2016-11-22 | 2017-05-24 | 同济大学 | Sulfur-group lead-compound thermoelectric material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JUN ZHANG等: "Synthesis, crystal structures, and electronic properties of one dimensional Ba9Sn3(Te1−xSex)15 (x = 0-1)", 《INORG. CHEM. FRONT.》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113481420A (en) * | 2021-07-12 | 2021-10-08 | 河南工业大学 | Ferromagnetic metal material and preparation method and application thereof |
| CN113481420B (en) * | 2021-07-12 | 2022-03-08 | 河南工业大学 | Ferromagnetic metal material and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shen et al. | Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds | |
| Schmidt et al. | Energy gap from tunneling and metallic contacts onto MgB 2: possible evidence for a weakened surface layer | |
| Yang et al. | High-pressure structural phase transition and metallization in Ga 2 S 3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa | |
| CN109119527A (en) | A kind of semiconductor material and its preparation method and application | |
| Chourasia et al. | Crystal structure and impedance study of samarium substituted perovskite: La1− xSmxMnO3 (x= 0.1–0.3) | |
| JP4078414B2 (en) | Lanthanum sulfide sintered body and manufacturing method thereof | |
| US10937939B2 (en) | Thermoelectric conversion material and thermoelectric conversion element | |
| CN114832725B (en) | Method for preparing high-pressure material capable of being separated from high-pressure device | |
| Kruaehong et al. | Synthesized and characterization of YBa 2 Cu 3 O y, Y 3 Ba 5 Cu 8 O y, and Y 7 Ba 11 Cu 18 O y superconductors by planetary high-energy ball-milling | |
| RU2768221C1 (en) | Modifier and method for changing the electrophysical and magnetic properties of ceramics | |
| Padmini et al. | Electrical properties of Mo-doped SrTiO3 prepared by solid state reaction method | |
| Yamanaka et al. | Phase diagram of the La–Si binary system under high pressure and the structures of superconducting LaSi5 and LaSi10 | |
| JP2808580B2 (en) | Thermoelectric semiconductor materials | |
| Jin et al. | High‐pressure synthesis and properties of new functional compounds | |
| EP0588240B1 (en) | Bi-type high-temperature superconducting oxide material and method of producing the same | |
| Kruaehong et al. | Some properties of Y3-8-11/Y211 composite bulk superconductors | |
| Alias et al. | The Impact of Silver: Gold Nanoparticles Ratio on its Structural, Morphological and Optical Properties | |
| Sasakura et al. | Superconductivity in New Pb-Based 1222 Layered Cuprates of (Pb 0.75 W 0.25) Sr 2 (Eu 2.0− x Ce x) Cu 2 O z | |
| JP2618047B2 (en) | Oxide superconducting material and its manufacturing method | |
| JPS63225524A (en) | Production of compound superconductive body | |
| CN113371685A (en) | Novel indium-containing transition metal telluride superconducting material and preparation method thereof | |
| DeNatale et al. | Optical Switching in Thin Film NdNiO3 | |
| Aljurani et al. | Superconductivity Measurements of (Hg, Tl)-1223 Compound Prepared in Capsule | |
| Choudhary et al. | Synthesis and ac susceptibility of YCa2Cu3O7− δ | |
| Khan | High-temperature (T 102 K) Baa/3Y1/3Cu03-, superconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190101 |