CN109111123A - Surface defect processing method and laser curing processing system - Google Patents
Surface defect processing method and laser curing processing system Download PDFInfo
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- CN109111123A CN109111123A CN201811044707.7A CN201811044707A CN109111123A CN 109111123 A CN109111123 A CN 109111123A CN 201811044707 A CN201811044707 A CN 201811044707A CN 109111123 A CN109111123 A CN 109111123A
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- defect
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Abstract
Surface defect processing method and laser curing processing system provided by the invention, are related to laser technology field.Wherein, the surface defect processing method includes: to provide a fused quartz element to be processed；Processing is scanned to the fused quartz element surface situation, to obtain each defect in the location information of fused quartz element surface；It makes to form silica sol-gel film layer on the surface with the defect by silicon dioxide gel, closes each defect to fill out；Laser curing processing is carried out to the silica sol-gel film layer according to the positional information.By the above method, can improve fused quartz element in the prior art has that resisting laser damage performance is lower.
Description
Technical field
The present invention relates to laser technology fields, at a kind of surface defect processing method and laser curing
Reason system.
Background technique
Fused quartz material has good optical property, and therefore, the optical element made by the material is in high power laser light
It is had a wide range of applications in system.Wherein, in high power laser system, with the promotion of fan-out capability, to fused quartz optics
The resisting laser damage performance requirement with higher of element.
Through inventor the study found that the manufacture due to fused quartz optical component generally uses machining processes, because without
It is evitable to will lead to element surface there are the surface defects such as point, scratch and crackle.But the laser of high-energy density exists
When acting on the surface defect areas, damage from laser occurs for surface defect meeting induced optical element, and causes optical element can not
The problem of normal work.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of surface defect processing method and laser curing processing system,
There is a problem of that resisting laser damage performance is lower to improve fused quartz element in the prior art.
To achieve the above object, the embodiment of the present invention adopts the following technical scheme that
A kind of surface defect processing method, comprising:
One fused quartz element to be processed is provided；
Processing is scanned to the surface appearance of the fused quartz element, to obtain each defect in fused quartz element surface
Location information；
It makes to form silica sol-gel film layer on the surface with the defect by silicon dioxide gel, with
It fills out and closes each defect；
Laser curing processing is carried out to the silica sol-gel film layer according to the positional information.
It is described by two executing in above-mentioned surface defect processing method in the embodiment of the present invention preferably selects
Silica sol makes to form silica sol-gel film layer on the surface with the defect, to fill out the step for closing each defect
Before rapid, the method also includes:
Tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide are mixed according to certain molar ratio, and are stirred to obtain
Colloidal sol；
Colloidal sol is sealed ripening, and the ammonia in removal colloidal sol is handled to obtain silica by reduced-pressure backflow
Colloidal sol.
In the embodiment of the present invention preferably selects, in above-mentioned surface defect processing method, the tetraethyl orthosilicate,
Ethyl alcohol and ammonium hydroxide are 1:(23~26 according to molar ratio): (2~2.1), mixing time are greater than 6h, the environment temperature of ripening
It is 7~23 days for 50 DEG C, duration, the granularity of the silicon dioxide gel is 20nm.
It is described to pass through silica in above-mentioned surface defect processing method in the embodiment of the present invention preferably selects
Colloidal sol makes to form silica sol-gel film layer in the element surface, includes: to fill out the step of closing each defect
Silicon dioxide gel is made in the fused quartz element using lifting coating process and has defective table by step a
Face, to form a film layer；
The film layer is dried in step b；
It repeats successively to execute above-mentioned steps a and step b more times, to obtain having the silicon dioxide gel-of stratified film solidifying
Adhesive film.
In the embodiment of the present invention preferably selects, in above-mentioned surface defect processing method, the lifting coating process
Middle pull rate is 1.4~1.7mm/s, and repeating the successively number of step a and step b is 3~6, and the silicon dioxide gel-is solidifying
Adhesive film with a thickness of 400~1000nm.
It is described by two executing in above-mentioned surface defect processing method in the embodiment of the present invention preferably selects
Silica sol makes to form silica sol-gel film layer on the surface with the defect, to fill out the step for closing each defect
Before rapid, the method also includes:
Have defective surface to the fused quartz element by ethyl alcohol, toluene to clean.
It is described according to institute executing in above-mentioned surface defect processing method in the embodiment of the present invention preferably selects
Before stating the step of location information carries out laser curing processing to the silica sol-gel film layer, the method is also wrapped
It includes:
Surface defect is placed in a baking oven through the fused quartz element of silicon dioxide gel film, to carry out at annealing
Reason, wherein annealing temperature be 160 DEG C, the duration be for 24 hours more than.
On the basis of the above, the embodiment of the invention also provides a kind of laser curing processing systems, for above-mentioned surface
Silica sol-gel film layer in defect handling method carries out laser curing processing, the laser curing processing system packet
It includes:
Carbon dioxide laser, for exporting the continuous laser of mid and far infrared wavelength；
Laser shutter, the laser shutter are correspondingly arranged with the carbon dioxide laser, to control the transmission of the laser；
Beam shaping, the beam shaping are correspondingly arranged with the laser shutter, with what is exported to the laser shutter
Laser carries out energy space distribution and the adjusting of shape is handled；
Mobile platform, the mobile platform are correspondingly arranged with the beam shaping, so that beam shaping output
Laser can carry out curing process to the silica sol-gel film layer for being located at the mobile platform；
Control assembly, the control assembly are connect with the laser shutter and mobile platform, to the laser shutter and shifting
Moving platform is controlled；
Wherein, the control assembly can control the mobile platform based on the location information of each defect of fused quartz element
It drives and fills out conjunction treated fused quartz element through surface defect and move, and control the laser shutter and open or close, so that institute
The laser for stating beam shaping output can carry out at solidification the silica sol-gel film layer of each defect corresponding position
Reason.
In the embodiment of the present invention preferably selects, in above-mentioned laser curing processing system, further includes:
Visible light source, for export visible light to the laser the silica sol-gel film layer effect
Position；
The work of micro imaging system, the micro imaging system and the laser in the silica sol-gel film layer
It is correspondingly arranged with position, and is connect with the control assembly, to obtain the laser in the silica sol-gel film layer
Function and effect and be sent to the control assembly.
In the embodiment of the present invention preferably selects, in above-mentioned laser curing processing system, further includes:
Hygrosensor, the hygrosensor and the silica sol-gel film layer are far from the fused quartz element
Be correspondingly arranged on one side, and connect with the control assembly, to obtain the silica coating under the laser action
Temperature data is simultaneously sent to the control assembly.
Surface defect processing method and laser curing processing system provided by the invention, by fused quartz element surface system
Silica sol-gel film layer is formed, to utilize the silica sol-gel film layer having compared with high laser damage threshold
Conjunction surface defect is filled out, improves the performance of the resisting laser damage of fused quartz element entirety with being effective, to improve the prior art
Middle fused quartz element causes resisting laser damage performance is lower to ask because there are the surface defects such as point, scratch and crackle
Topic.Also, by using laser to silica sol-gel film layer carry out curing process, moreover it is possible to avoid point, scratch and
The surface defects such as crackle lead to that unnecessary Laser Modulation occurs in use, and then influence the normal of optical components downstream
The problem of use.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
Fig. 1 is the flow diagram of surface defect processing method provided in an embodiment of the present invention.
Fig. 2 is the flow diagram of step S130 in Fig. 1.
Fig. 3 is another flow diagram of surface defect processing method provided in an embodiment of the present invention.
Fig. 4 is the application schematic diagram of laser curing processing system provided in an embodiment of the present invention.
Icon: 110- carbon dioxide laser；120- laser shutter；130- beam shaping；140- mobile platform；150-
Control assembly；160- micro imaging system；170- visible light source；180- hygrosensor.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment only
It is a part of the embodiments of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings
The component of embodiment can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.In description of the invention
In unless specifically defined or limited otherwise, term " setting ", " connected ", " connection " shall be understood in a broad sense, for example, it may be
It is fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connection, be also possible to be electrically connected；It can be
It is connected directly, the connection inside two elements can also be can be indirectly connected through an intermediary.For the common of this field
For technical staff, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As shown in Figure 1, the embodiment of the invention provides a kind of surface defect processing method, for fused quartz element surface
Existing defect is handled.Wherein, the surface defect processing method may include step S110, step S120, step
S130 and step S140.
Step S110 provides a fused quartz element to be processed.
In the present embodiment, available one fused quartz element to be processed, that is to say, that obtain a surface existing defects
Fused quartz element.Wherein, the type of the defect is unrestricted, can be determined according to practical application request, for example, can
To include, but are not limited to the surface defects such as point, scratch and crackle.
Step S120 is scanned processing to the surface appearance of the fused quartz element, to obtain each defect in fused quartz
The location information of element surface.
It in the present embodiment, can in order to efficiently against influence of each defect to element overall performance on fused quartz element
Each defect is handled with first obtaining the location information of each defect.Wherein, in order to guarantee obtain location information can
To be comprehensively identified to each defect, processing can be scanned to the surface appearance of fused quartz element.
In detail, fused quartz element surface can be scanned line by line according to scheduled track, to obtain the element table
The location information of all defects on face.Also, in scanning, it can both be fixed with scanning device and to control fused quartz element opposite
Movement is also possible to fused quartz element and fixes and scanning device relative motion.
One kind can be figure can be carried out to fused quartz element surface by the way of micro-imaging in alternative embodiment
As scanning, to obtain the information of each region surface situation of the element, and judge each defect in fused quartz element according to the information
The corresponding location information in surface simultaneously stores.Wherein, when carrying out image scanning by way of micro-imaging, in order to guarantee acquisition
The amplification factor of the validity of information, micro-imaging can be 50~200X.
Step S130, makes on the surface with the defect that form silicon dioxide gel-solidifying by silicon dioxide gel
Adhesive film closes each defect to fill out.
In the present embodiment, it is contemplated that the characteristics of silica sol-gel film layer laser damage threshold with higher,
It can make to form silica sol-gel film layer on the surface of fused quartz element, close each defect to fill out.Pass through the titanium dioxide
Silicon sol-gel film layer can be filled each defect on the fused quartz element surface, to solve the fused quartz element
Since resisting laser damage performance declines caused by there is surface defect.
Also, in order to avoid silica sol-gel film layer may be with fused quartz element there are the positions of surface defect
It sets to form hollow region, in the present embodiment, can preferably be suitable for filling out the titanium dioxide for closing surface defect by the warp of preparation
Silica solution makes to form silica sol-gel film layer in fused quartz element surface.
Step S140 carries out laser curing processing to the silica sol-gel film layer according to the positional information.
In the present embodiment, believed by executing the available position to each defect on fused quartz element surface step S120
Breath, the specific location of each defect can be correctly found according to the location information, and to the position when executing step S140
Corresponding silica sol-gel film layer carries out laser curing processing, to guarantee resisting laser damage existing for corresponding position
The lower problem of energy is effectively overcome.
Another kind can be in alternative embodiment, can be by laser to each of silica sol-gel film layer
Region all carries out laser curing processing, and it is possible to the location information based on each defect and specific defect type, to each defect institute
Laser curing is handled after in position, corresponding silica sol-gel film layer is reinforced, for example, can be by improving laser
Output energy or increase the modes such as action time of laser and complete the laser curing reinforced processing.
Wherein, it is unrestricted to carry out the type of laser that laser curing processing uses, can be carried out according to practical application request
Setting, for example, the wavelength that carbon dioxide laser can be used to export carries out laser curing processing for 10.6 μm of continuous laser.
Optionally, make silica sol-gel film layer mode it is unrestricted, can according to practical application request into
Row setting.Also, the mode based on production is different, and step S130 may include different step.In the present embodiment, in conjunction with figure
2, step S130 may include step S131 and step S133.
It is defective to be made in fused quartz element tool using lifting coating process by step S131 for silicon dioxide gel
Surface, to form a film layer.
In the present embodiment, the silicon dioxide gel prepared can be made in by the fused quartz by pulling coating machine
Element has defective surface, to form a film layer.Wherein, it is the uniformity for guaranteeing the film layer made, can control lifting and apply
Pull rate is 1.4~1.7mm/s in membrane process.
The film layer is dried in step S133.
In the present embodiment, for guarantee the film layer made by silicon dioxide gel can stable molding as soon as possible, can be right
The film layer is dried.Wherein, it is contemplated that the film layer made by silicon dioxide gel is generally relatively thin, can repeat successively to hold
Row above-mentioned steps S131 and step S133 more times, to obtain the silica sol-gel film layer with stratified film.
Optionally, the specific thickness for making the silica sol-gel film layer of formation is unrestricted, as long as can be effective
Resisting laser damage reduced performance caused by ground overcomes the problems, such as due to existing defects.In the present embodiment, the dioxy
The thickness of SiClx film layer can be 400~1000nm.
Optionally, the specific number for repeating successively to execute above-mentioned steps S131 and step S133 is unrestricted, can basis
Practical application request is configured, that is to say, that the quantity for the film layer that the silica sol-gel film layer includes is unrestricted
System, for example, can be configured according to the thickness of the silica sol-gel film layer of the thickness and needs of single layer film layer.?
In the present embodiment, when the silica sol-gel film layer is with a thickness of 400~1000nm, step S131 is repeated
Number with step S133 can be 3~6.
Further, also need to complete the preparation of silicon dioxide gel before executing step S130, that is to say, that this reality
It applies in example, in conjunction with Fig. 3, before executing step S130, the surface defect processing method can also include step S160 and step
Rapid S170, to prepare silicon dioxide gel.
Tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide are mixed according to certain molar ratio, and are stirred by step S160
It mixes to obtain colloidal sol.
In the present embodiment, colloidal sol can be prepared by tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide.Wherein, each group
The ratio divided is unrestricted, can be configured according to practical application request.In the present embodiment, pass through the colloidal sol system for guarantee
The silica sol-gel film layer made has preferable optical property, the tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide
Can be 1:(23~26 according to molar ratio): (2~2.1).
Also, the time being stirred is also unrestricted, can be configured according to practical application request.In the present embodiment
In, to guarantee the mutual abundant effect of tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide, so that obtained silicon dioxide gel-
Gel film layer has preferable optical property, and mixing time can be greater than 6h.
Colloidal sol is sealed ripening by step S170, and by the ammonia in reduced-pressure backflow processing removal colloidal sol to obtain
To silicon dioxide gel.
In the present embodiment, after mixing tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide, obtained colloidal sol can be carried out
Ripening is sealed, to guarantee that tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide are adequately reacted.Also, in view of ammonium hydroxide is made
Reduced-pressure backflow can be passed through for the supplier of catalyst and reaction raw materials water in order to avoid the presence of ammonia impacts colloidal sol
Mode remove the ammonia in colloidal sol, to obtain silicon dioxide gel.
Wherein, the design parameter of ripening is unrestricted, can be configured according to practical application request, for example, old
Change processing environmental problem can be 50 DEG C, the duration can be for 7~23 days.Also, the grain of obtained silicon dioxide gel
It is also unrestricted to spend size, can be configured according to practical application request.In the present embodiment, pass through the dioxy for guarantee
The silica sol-gel film layer of SiClx colloidal sol production has the effect of that preferable optical property and surface defect fill out conjunction, institute
The granularity for stating silicon dioxide gel can be 20nm.
Due to fused quartz member when further, in order to avoid making silica sol-gel film layer by step S130
The problem of part surface has pollutant and leads to the optical property reduction and damage from laser of silica sol-gel film layer,
In the present embodiment, before executing step S130, the surface defect processing method can be the following steps are included: pass through second
Alcohol, toluene clean the fused quartz element surface.
Also, after executing step S130 so that production forms silica sol-gel film layer on fused quartz, and
Before executing step S140, the surface defect processing method can be the following steps are included: will be through silicon dioxide gel film
Fused quartz element be placed in a baking oven, to be made annealing treatment.
By being made annealing treatment, the silica sol-gel film layer of production can be enable effectively to discharge stress
And ductility and toughness with higher.Wherein, the design parameter made annealing treatment is unrestricted, can be according to practical application
Demand is configured, for example, the temperature of annealing can be 160 DEG C, the duration can be for 24 hours more than.
In conjunction with Fig. 4, the embodiment of the present invention also provides a kind of laser curing processing system, for the processing of above-mentioned surface defect
Silica sol-gel film layer in method carries out laser curing processing.That is, in above-mentioned surface defect processing method
In, when executing step S140, it can be completed by the laser curing processing system.
In detail, the laser curing processing system may include carbon dioxide laser 110, laser shutter 120, light beam
Reshaper 130, mobile platform 140 and control assembly 150.
Wherein, for exporting laser, which is used for silica sol-gel the carbon dioxide laser 110
Film layer carries out curing process.The laser shutter 120 is correspondingly arranged with the carbon dioxide laser 110, described sharp to control
The transmission of light.The beam shaping 130 is correspondingly arranged with the laser shutter 120, with what is exported to the laser shutter 120
Laser carries out energy space distribution and the adjusting of shape is handled.The mobile platform 140 is corresponding with the beam shaping 130 to be set
It sets, so that the laser that the beam shaping 130 exports can be solidifying to the silicon dioxide gel-for being located at the mobile platform 140
Adhesive film carries out curing process.The control assembly 150 is connect with the laser shutter 120 and mobile platform 140, to described
Laser shutter 120 and mobile platform 140 are controlled.
That is, the continuous laser that the wavelength that the carbon dioxide laser 110 exports is 10.6 μm, can successively pass through
The laser shutter 120, beam shaping 130 and mobile platform 140 are crossed, to the dioxy for being located at the mobile platform 140
SiClx sol-gel film layer carries out curing process.
In detail, during carrying out curing process, the control assembly 150 can be each based on fused quartz element surface
The location information of defect controls the mobile platform 140 and the fused quartz element and silica sol-gel film layer is driven to transport
It is dynamic, and control the laser shutter 120 and open or close, so that the laser that the beam shaping 130 exports can be lacked to each
The silica sol-gel film layer for falling into corresponding position carries out curing process.
Can be in alternative embodiment in one kind, the control assembly 150 can control the mobile platform 140 and move,
And it is currently able in the laser that the location information of each defect based on fused quartz element judges that the beam shaping 130 exports
When acting on the corresponding fused quartz element existing defects in region of silica sol-gel film layer, the movement can control
Platform 140 stops, and controls the laser shutter 120 and open so that the laser that the carbon dioxide laser 110 exports can
Silica sol-gel film layer is acted on after the laser shutter 120 and the beam shaping 130, to effect
The silica sol-gel film layer in region carries out curing process.
Wherein, the control assembly 150 can also be connect with the carbon dioxide laser 110, to the titanium dioxide
Whether carbon laser 110, which exports laser, is controlled, and is controlled the energy of output laser.
Further, to avoid the laser when carrying out curing process from causing to damage to silica sol-gel film layer,
In the present embodiment, the laser curing processing system can also include a micro imaging system 160, with to laser to silica
The function and effect of sol-gel film layer are monitored.
Wherein, the micro imaging system 160 is with the laser in the effect position of the silica sol-gel film layer
It sets and is correspondingly arranged, and connect with the control assembly 150, to obtain the laser in the silica sol-gel film layer
Function and effect and be sent to the control assembly 150.Also, sentenced in the control assembly 150 according to the function and effect of acquisition
It is disconnected go out silica sol-gel film layer when may damage, can control the laser shutter 120 and close, to stop
Laser is exported to the carbon dioxide sol-gel film layer.In other words, it can also judge silica sol-gel film
When layer may damage, controls the mobile platform 140 and drive the fused quartz element mobile.
Also, it is monitored for the ease of the micro imaging system 160, in the present embodiment, at the laser curing
Reason system can also include visible light source 170.
In detail, the visible light source 170 is solidifying in the silicon dioxide gel-to the laser for exporting visible light
The active position of adhesive film.That is, the delivery outlet of the visible light source 170 can be solidifying with the silicon dioxide gel-
Adhesive film is correspondingly arranged.
Further to avoid the problem that laser causes damage to silica sol-gel film layer, in the present embodiment,
The laser curing processing system can also include hygrosensor 180.
Wherein, the hygrosensor 180 can be with the silica sol-gel film layer far from the fused quartz member
Part is correspondingly arranged on one side, and is connect with the control assembly 150, to obtain the silica sol-gel film layer in institute
It states the temperature data under laser action and is sent to the control assembly 150.
Also, the control assembly 150 be based on the temperature data judge the silica coating it is possible that
When damage, it can control the laser shutter 120 and close, to stop output laser to the silica sol-gel film layer.
In other words, it can also control the carbon dioxide laser 110 when judging that silica coating may damage and drop
The output power of low laser.
Wherein, in order to silica sol-gel film layer is judged based on temperature data it is possible that damage
A temperature threshold can be stored in advance in situation, as long as judging silicon dioxide gel-in the temperature data obtained by detection
When the temperature of gel film layer reaches the temperature threshold, so that it may determine silica sol-gel film layer it is possible that damage.
Also, the specific value of the temperature threshold is unrestricted, can be set according to the heat resistance of silica sol-gel film layer
It sets, for example, it may be 1200~1300 DEG C.
In conclusion surface defect processing method provided by the invention and laser curing processing system, by fused quartz
The surface of element makes to form silica sol-gel film layer, to utilize the silica having compared with high laser damage threshold
Sol-gel film layer fills out conjunction surface defect, improves the performance of the resisting laser damage of fused quartz element entirety with being effective, with
Improving fused quartz element in the prior art because there are the surface defects such as point, scratch and crackle leads to resisting laser damage
The lower problem of performance.Also, curing process is carried out to silica sol-gel film layer by using laser, moreover it is possible to avoid
The surface defects such as point, scratch and crackle lead to that unnecessary Laser Modulation occurs in use, and then influence downstream
The problem of normal use of optical element.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of surface defect processing method characterized by comprising
One fused quartz element to be processed is provided；
Processing is scanned to the surface appearance of the fused quartz element, to obtain each defect in the position of fused quartz element surface
Information；
It makes to form silica sol-gel film layer on the surface with the defect by silicon dioxide gel, be closed with filling out
Each defect；
Laser curing processing is carried out to the silica sol-gel film layer according to the positional information.
2. surface defect processing method according to claim 1, which is characterized in that described molten by silica executing
Glue makes to form silica sol-gel film layer on the surface with the defect, before filling out the step of closing each defect, institute
State method further include:
Tetraethyl orthosilicate, ethyl alcohol and ammonium hydroxide are mixed according to certain molar ratio, and are stirred to obtain colloidal sol；
Colloidal sol is sealed ripening, and it is molten to obtain silica that the ammonia removed in colloidal sol is handled by reduced-pressure backflow
Glue.
3. surface defect processing method according to claim 2, which is characterized in that the tetraethyl orthosilicate, ethyl alcohol with
And ammonium hydroxide is 1:(23~26 according to molar ratio): (2~2.1), mixing time are greater than 6h, and the environment temperature of ripening is 50
DEG C, the duration be 7~23 days, the granularity of the silicon dioxide gel is 20nm.
4. surface defect processing method according to claim 1 to 3, which is characterized in that described to pass through titanium dioxide
Silica solution makes to form silica sol-gel film layer on the surface with the defect, to fill out the step of closing each defect packet
It includes:
Silicon dioxide gel is made in the fused quartz element using lifting coating process and has defective surface by step a, with
Form a film layer；
The film layer is dried in step b；
It repeats successively to execute above-mentioned steps a and step b more times, to obtain the silica sol-gel film with stratified film
Layer.
5. surface defect processing method according to claim 4, which is characterized in that lift speed in the lifting coating process
Degree is 1.4~1.7mm/s, and repeating the successively number of step a and step b is 3~6, the silica sol-gel film layer
With a thickness of 400~1000nm.
6. surface defect processing method according to claim 1 to 3, which is characterized in that pass through described in the execution
Silicon dioxide gel makes to form silica sol-gel film layer on the surface with the defect, closes each defect to fill out
Before step, the method also includes:
Have defective surface to the fused quartz element by ethyl alcohol, toluene to clean.
7. surface defect processing method according to claim 1 to 3, which is characterized in that executing the basis
Before the step of location information carries out laser curing processing to the silica sol-gel film layer, the method is also
Include:
Surface defect is placed in a baking oven through the fused quartz element of silicon dioxide gel film, to be made annealing treatment,
In, annealing temperature be 160 DEG C, the duration be for 24 hours more than.
8. a kind of laser curing processing system, in the surface defect processing method described in claim 1-7 any one
Silica sol-gel film layer carry out laser curing processing, which is characterized in that the laser curing processing system includes:
Carbon dioxide laser, for exporting the continuous laser of mid and far infrared wavelength；
Laser shutter, the laser shutter are correspondingly arranged with the carbon dioxide laser, to control the transmission of the laser；
Beam shaping, the beam shaping are correspondingly arranged with the laser shutter, with the laser exported to the laser shutter
It carries out energy space distribution and the adjusting of shape is handled；
Mobile platform, the mobile platform are correspondingly arranged with the beam shaping, so that the laser of beam shaping output
Curing process can be carried out to the silica sol-gel film layer for being located at the mobile platform；
Control assembly, the control assembly are connect with the laser shutter and mobile platform, with flat to the laser shutter and movement
Platform is controlled；
Wherein, the control assembly can control the mobile platform based on the location information of each defect of fused quartz element and drive
Conjunction treated fused quartz element movement is filled out through surface defect, and controls the laser shutter and opens or closes, so that the light
The laser of beam reshaper output can carry out curing process to the silica sol-gel film layer of each defect corresponding position.
9. laser curing processing system according to claim 8, which is characterized in that further include:
Visible light source, for export visible light to the laser the silica sol-gel film layer active position；
Micro imaging system, the micro imaging system and the laser are in the effect position of the silica sol-gel film layer
It sets and is correspondingly arranged, and connect with the control assembly, to obtain the laser in the work of the silica sol-gel film layer
With effect and it is sent to the control assembly.
10. laser curing processing system according to claim 9, which is characterized in that further include:
Hygrosensor, the hygrosensor and the silica sol-gel film layer far from the fused quartz element one
Face is correspondingly arranged, and is connect with the control assembly, to obtain the silica sol-gel film layer in the laser action
Under temperature data and be sent to the control assembly.
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| CN201811044707.7A CN109111123A (en) | 2018-09-07 | 2018-09-07 | Surface defect processing method and laser curing processing system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112759276A (en) * | 2021-01-05 | 2021-05-07 | 中国科学院上海光学精密机械研究所 | Additive repairing method and device for surface defects of fused quartz optical element |
| CN116282865A (en) * | 2022-11-25 | 2023-06-23 | 中国工程物理研究院激光聚变研究中心 | Online removing system and method for high-energy radiation defects of optical element |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6217044A (en) * | 1985-07-12 | 1987-01-26 | Hoya Corp | Formation of antireflection film resistant to laser damage and having high wear resistance on optical element surface |
| CN1226684A (en) * | 1998-02-20 | 1999-08-25 | 中国科学院山西煤炭化学研究所 | Preparation of membrane for preventing injury from laser beam |
| US7619227B2 (en) * | 2007-02-23 | 2009-11-17 | Corning Incorporated | Method of reducing radiation-induced damage in fused silica and articles having such reduction |
| CN102759267A (en) * | 2011-06-27 | 2012-10-31 | 武汉晶石光电技术有限公司 | Metal sealed radio frequency carbon dioxide laser dryer |
| CN103042008A (en) * | 2012-12-25 | 2013-04-17 | 同济大学 | Cleaning method of optical substrate for laser thin-film element |
| CN106587652A (en) * | 2016-12-07 | 2017-04-26 | 英诺激光科技股份有限公司 | Repairing method for laser cutting damage on surface of glass |
| CN107393850A (en) * | 2017-08-16 | 2017-11-24 | 君泰创新（北京）科技有限公司 | The drying means and system of solar cell size |
| CN108455870A (en) * | 2018-04-17 | 2018-08-28 | 中国工程物理研究院激光聚变研究中心 | Quartz and the method for increasing quartzy resisting laser damage performance |
-
2018
- 2018-09-07 CN CN201811044707.7A patent/CN109111123A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6217044A (en) * | 1985-07-12 | 1987-01-26 | Hoya Corp | Formation of antireflection film resistant to laser damage and having high wear resistance on optical element surface |
| CN1226684A (en) * | 1998-02-20 | 1999-08-25 | 中国科学院山西煤炭化学研究所 | Preparation of membrane for preventing injury from laser beam |
| US7619227B2 (en) * | 2007-02-23 | 2009-11-17 | Corning Incorporated | Method of reducing radiation-induced damage in fused silica and articles having such reduction |
| CN102759267A (en) * | 2011-06-27 | 2012-10-31 | 武汉晶石光电技术有限公司 | Metal sealed radio frequency carbon dioxide laser dryer |
| CN103042008A (en) * | 2012-12-25 | 2013-04-17 | 同济大学 | Cleaning method of optical substrate for laser thin-film element |
| CN106587652A (en) * | 2016-12-07 | 2017-04-26 | 英诺激光科技股份有限公司 | Repairing method for laser cutting damage on surface of glass |
| CN107393850A (en) * | 2017-08-16 | 2017-11-24 | 君泰创新（北京）科技有限公司 | The drying means and system of solar cell size |
| CN108455870A (en) * | 2018-04-17 | 2018-08-28 | 中国工程物理研究院激光聚变研究中心 | Quartz and the method for increasing quartzy resisting laser damage performance |
Non-Patent Citations (3)
| Title |
|---|
| 杨乃恒 等: "《幕墙玻璃真空镀膜技术》", 30 November 1994, 东北大学出版社 * |
| 王承遇 等: "《玻璃表面装饰 第2版》", 31 January 2011, 国防工业出版社 * |
| 邱家稳 等: "《航天器热控薄膜技术》", 30 June 2016, 国防工业出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112759276A (en) * | 2021-01-05 | 2021-05-07 | 中国科学院上海光学精密机械研究所 | Additive repairing method and device for surface defects of fused quartz optical element |
| CN116282865A (en) * | 2022-11-25 | 2023-06-23 | 中国工程物理研究院激光聚变研究中心 | Online removing system and method for high-energy radiation defects of optical element |
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