CN109107987A - A kind of blowing method - Google Patents
A kind of blowing method Download PDFInfo
- Publication number
- CN109107987A CN109107987A CN201710479656.XA CN201710479656A CN109107987A CN 109107987 A CN109107987 A CN 109107987A CN 201710479656 A CN201710479656 A CN 201710479656A CN 109107987 A CN109107987 A CN 109107987A
- Authority
- CN
- China
- Prior art keywords
- voltage
- blowing method
- purge
- modulus value
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
Abstract
The present invention provides a kind of blowing method, including purge step: being passed through purge gas into chamber, starts to be purged according to parameter preset, loads first voltage to the DC electrode of electrostatic chuck in purge.Blowing method provided by the invention, so that the charged particle on electrostatic chuck and its surrounding process kit is easy to be purged off, so as to improve product yield.
Description
Technical field
The invention belongs to microelectronic processing technique fields, and in particular to a kind of blowing method.
Background technique
Etching technics is the critical process that pictorial pattern is formed in integrated circuit (IC) chip manufacturing, and process gas is by penetrating
Frequency generates plasma, contains a large amount of electronics, ion, the atom of excitation state, molecule and free radical isoreactivity in plasma
Particle, these active particles and substrate interaction make material surface that various physical and chemical reactions occur, to make material table
Face performance changes, and completes etching technics.In practical applications, it can be fallen before etching or in etching process due to particle
On substrate, exposure mask will be formed in etching, influences the transfer of original litho pattern, reduce product yield.Therefore, particle contamination
Problem seriously restricts extension of the integrated circuit fields to more low technical node, especially, into 32-14 nm technology generation
Afterwards, the critical size of etching further decreases, and to the particle contamination of substrate, more stringent requirements are proposed.
To avoid above-mentioned particle contamination, in the prior art, blowing method shown in FIG. 1 is generallyd use, by technique remnants
Gas and the indoor particle of chamber are removed completely, specifically, as shown in Figure 1, generally after the completion of etching technics, it is determined whether are carried out
Purging terminates if it is not, then spreading out of substrate；If so, according to preset purge time, the flow of purge gas and chamber
Pressure is purged, and after the completion of purging, substrate is spread out of, and is terminated.
The techniques such as halogen acids residual gas and particle can be reduced using blowing method described in Fig. 1 to a certain extent,
But due to containing a large amount of electronics, ion, the atom of excitation state, molecule and free radical isoreactivity particle in plasma, because
This, the particle on the electrostatic chuck and surrounding process kit for carrying substrate will be brought on charge, in this situation
Under, due to Electrostatic Absorption effect electrification granular absorption electrostatic chuck and around process kit on, will not be purged
As air-flow is pulled away in journey, in this way, the particle is neutralized and moves in next etching technics, and can fall on substrate
Reduce product yield.
Therefore, the present invention needs a kind of blowing method, purges charged particle on electrostatic chuck and its surrounding process kit.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of blowing method is proposed, is made
The charged particle obtained on electrostatic chuck and its surrounding process kit is easy to be purged off, so as to improve product yield.
One of in order to solve the above problem, the present invention provides a kind of blowing methods, comprising:
Purge step: being passed through purge gas into chamber, starts to be purged according to parameter preset, in purge to
The DC electrode of electrostatic chuck loads first voltage.
Preferably, the purge step further include:
After loading first voltage preset time to the DC electrode in purge, stop load first voltage, and
To DC electrode load and the opposite polarity second voltage of first voltage.
Preferably, before the purge step further include:
Determine step, it is determined whether purge step is carried out, if so, executing the purge step.
Preferably, the modulus value of the first voltage is equal to the mould of operating voltage of the DC electrode in fixed substrate
Value.
Preferably, the value range of the modulus value of the first voltage is work electricity of the DC electrode in fixed substrate
The 95%~105% of the modulus value of pressure.
Preferably, the modulus value of the modulus value of the first voltage and the second voltage is equal.
Preferably, the value range of the modulus value of the first voltage is in 1900V~2100V.
Preferably, it is 100sccm~1000sccm that the parameter preset, which includes: the range of flow of the purge gas,；Institute
The pressure for stating chamber is 200mTorr.
Preferably, the purge gas is nitrogen.
The invention has the following advantages:
In the present invention, due to loading first voltage to the DC electrode of electrostatic chuck in purge, this
It will with charged particle identical with first voltage polarity on electrostatic chuck and its surrounding process kit under the action of one voltage
By the repulsion of first voltage, therefore, it is easy to be purged off, therefore, blowing method provided by the invention can be disposed well
The indoor charged particle of chamber, to improve product yield.
Detailed description of the invention
Fig. 1 is the flow chart of blowing method used by the prior art；
Fig. 2 is the flow chart of blowing method provided in an embodiment of the present invention；
Fig. 3 is the control principle block diagram of electrostatic chuck in the present invention；
Fig. 4 is schematic diagram when loading first voltage to DC electrode in Fig. 2；
Fig. 5 is switched to schematic diagram when second voltage for the voltage of DC electrode in Fig. 2.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The blowing method of offer is described in detail.
Fig. 2 is the flow chart of blowing method provided in an embodiment of the present invention；Fig. 3 is that the control of electrostatic chuck in the present invention is former
Manage block diagram；Fig. 4 is schematic diagram when loading first voltage to DC electrode in Fig. 2；Referring to Figure 2 together -4, the present invention is implemented
The blowing method that example provides, comprising:
Purge step: being passed through purge gas into chamber, starts to be purged according to parameter preset, in purge to
The DC electrode of electrostatic chuck loads first voltage.
Referring to Fig. 3, in practical applications, control signal can be also sent to electrostatic chuck supply 11 by host computer 10,
To control the output voltage (voltage loaded on the DC electrode 120 of electrostatic chuck 12) of electrostatic chuck supply 11.
In the present embodiment, as shown in figure 4, the polarity of first voltage is negative, in this way, the particle with negative electricity then will receive
Therefore the repulsive force (as shown by the arrow in Figure 4) of first voltage should be easy quilt during purging with the particle of negative electricity
It takes away, therefore blowing method provided in an embodiment of the present invention, the indoor charged particle of chamber can be disposed well, to improve production
Product yield.
Preferably, as shown in Fig. 2, purge step further include:
After loading first voltage preset time to DC electrode in purge, stop load first voltage, and to institute
State DC electrode load and the opposite polarity second voltage of first voltage.
Referring to Fig. 5, the first voltage that the polarity on DC electrode 120 is negative is switched to the second voltage that polarity is positive,
In the case, remaining positively charged particle will will receive the repulsive force (as shown by the arrow in Figure 5) of second voltage, because
This, should be easy to be pulled away during purging, to finally make positively charged and electronegative particle with the particle of positive electricity
It is pulled away, realization farthest takes away charged particle, farthest improves product yield.
As shown in Fig. 2, before purge step further include:
Determine step, it is determined whether purge step is carried out, if so, executing purge step.
It by the determination step, can artificially choose whether to be purged according to practical chamber situation, in this way, can be with
Improve the practicability of blowing method.
In this embodiment, the modulus value of first voltage is equal to the modulus value of operating voltage of the DC electrode in fixed substrate, this
Sample can simplify electrostatic chuck supply 11；Operating voltage of the so-called DC electrode in fixed substrate is directed to DC electrode and adds
The voltage in a manner of using Electrostatic Absorption when fixed wafer carried.Certainly, the present invention is not limited thereto, in practical application
In, the value range of the modulus value of first voltage be the modulus value of operating voltage of the DC electrode in fixed substrate 95%~
105%, for example, the value range of the modulus value of first voltage is in 1900V~2100V if operating voltage is 2000V.
In this embodiment, it is preferred that the modulus value of first voltage and the modulus value of second voltage are equal, in the present embodiment,
Modulus value is 2000V, in this manner it is ensured that positively charged particle and negatively charged particle are pulled away well as far as possible.Certainly, exist
In practical application, the two is acceptable and unequal.
In this embodiment, it is preferred that the range of flow that the parameter preset in purge step includes: the purge gas is
100sccm~1000sccm；The pressure of chamber is 200mTorr, in this way, under the parameter preset, the effect of impact of purge gas
It is more conducive to the purging of the techniques such as halogen acids residual gas and particle.
In the present embodiment, purge gas is nitrogen.But the present invention is not limited thereto, and in practical applications, purging
Gas can also be other gases, as long as will not have an impact to actual process, for example, inert gas.
It should be noted that in the present embodiment, the polarity of first voltage is negative, the polarity of second voltage is positive, still,
The present invention is not limited thereto, in practical applications, or first voltage is positive, and second voltage is negative.
It is further to note that blowing method provided by the invention can not only be applied to such as etching technics, deposition
Technique carries out after completing, and can also apply before etching technics, depositing operation carry out, and to clean to substrate, guarantees
The cleannes of substrate.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of blowing method characterized by comprising
Purge step: being passed through purge gas into chamber, starts to be purged according to parameter preset, to electrostatic in purge
The DC electrode of chuck loads first voltage.
2. blowing method according to claim 1, which is characterized in that the purge step further include:
After loading first voltage preset time to the DC electrode in purge, stop load first voltage, and to institute
State DC electrode load and the opposite polarity second voltage of first voltage.
3. blowing method according to claim 1, which is characterized in that before the purge step further include:
Determine step, it is determined whether purge step is carried out, if so, executing the purge step.
4. blowing method according to claim 2, which is characterized in that the modulus value of the first voltage is equal to the direct current
The modulus value of operating voltage of the pole in fixed substrate.
5. blowing method according to claim 2, which is characterized in that the value range of the modulus value of the first voltage is institute
State the 95%~105% of the modulus value of operating voltage of the DC electrode in fixed substrate.
6. blowing method according to claim 2, which is characterized in that the modulus value of the first voltage and the second voltage
Modulus value it is equal.
7. blowing method according to claim 1, which is characterized in that the value range of the modulus value of the first voltage exists
1900V~2100V.
8. blowing method according to claim 1, which is characterized in that the parameter preset includes:
The range of flow of the purge gas is 100sccm~1000sccm；
The pressure of the chamber is 200mTorr.
9. blowing method according to claim 1, which is characterized in that the purge gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710479656.XA CN109107987A (en) | 2017-06-22 | 2017-06-22 | A kind of blowing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710479656.XA CN109107987A (en) | 2017-06-22 | 2017-06-22 | A kind of blowing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109107987A true CN109107987A (en) | 2019-01-01 |
Family
ID=64732742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710479656.XA Pending CN109107987A (en) | 2017-06-22 | 2017-06-22 | A kind of blowing method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256825B1 (en) * | 1996-07-15 | 2001-07-10 | Taiwan Semiconductor Manufacturing Company | Removal of particulate contamination in loadlocks |
| KR100625099B1 (en) * | 2003-08-25 | 2006-09-20 | 동경 엘렉트론 주식회사 | Method for cleaning elements in vacuum chamber and apparatus for processing substrates |
| CN101034679A (en) * | 2006-03-08 | 2007-09-12 | 东京毅力科创株式会社 | Substrate processing apparatus, substrate attracting method, and storage medium |
| CN101360567A (en) * | 2005-12-23 | 2009-02-04 | 朗姆研究公司 | Cleaning of electrostatic chucks using ultrasonic agitation and applied electric fields |
| CN101740339A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Etching method |
| CN102426412A (en) * | 2011-07-12 | 2012-04-25 | 上海华力微电子有限公司 | Method for removing surface dust of mask plate |
| CN106816359A (en) * | 2015-12-02 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer processing method |
-
2017
- 2017-06-22 CN CN201710479656.XA patent/CN109107987A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256825B1 (en) * | 1996-07-15 | 2001-07-10 | Taiwan Semiconductor Manufacturing Company | Removal of particulate contamination in loadlocks |
| KR100625099B1 (en) * | 2003-08-25 | 2006-09-20 | 동경 엘렉트론 주식회사 | Method for cleaning elements in vacuum chamber and apparatus for processing substrates |
| CN101360567A (en) * | 2005-12-23 | 2009-02-04 | 朗姆研究公司 | Cleaning of electrostatic chucks using ultrasonic agitation and applied electric fields |
| CN101034679A (en) * | 2006-03-08 | 2007-09-12 | 东京毅力科创株式会社 | Substrate processing apparatus, substrate attracting method, and storage medium |
| CN101740339A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Etching method |
| CN102426412A (en) * | 2011-07-12 | 2012-04-25 | 上海华力微电子有限公司 | Method for removing surface dust of mask plate |
| CN106816359A (en) * | 2015-12-02 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer processing method |
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