CN109104158A - It is a kind of that the class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor - Google Patents
It is a kind of that the class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor Download PDFInfo
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- CN109104158A CN109104158A CN201811261113.1A CN201811261113A CN109104158A CN 109104158 A CN109104158 A CN 109104158A CN 201811261113 A CN201811261113 A CN 201811261113A CN 109104158 A CN109104158 A CN 109104158A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
- H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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Abstract
The class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor the present invention provides a kind of, comprising: metal-oxide-semiconductor output module, the second port of the second bias voltage of first port and access including accessing the first bias voltage；Metal-oxide-semiconductor biases control module, including the first N-type biasing metal-oxide-semiconductor, the second N-type bias metal-oxide-semiconductor, and the first p-type biases metal-oxide-semiconductor, the second p-type biases metal-oxide-semiconductor；Second p-type biasing metal-oxide-semiconductor biases metal-oxide-semiconductor with the first N-type respectively and the first p-type biasing metal-oxide-semiconductor connects and exports the first bias voltage；Second N-type biasing metal-oxide-semiconductor biases metal-oxide-semiconductor with the first N-type respectively and the first p-type biasing metal-oxide-semiconductor connects and exports the second bias voltage；Wherein, the first N-type biasing metal-oxide-semiconductor and the second p-type bias several N-type pressure limiting metal-oxide-semiconductors of connecting between metal-oxide-semiconductor, and the first p-type biases several p-type pressure limiting metal-oxide-semiconductors of connecting between metal-oxide-semiconductor and the second N-type biasing metal-oxide-semiconductor.The present invention, which can be realized, does not additionally eliminate positive feedback using high-pressure MOS component or the specifically developed MOS device for reducing substrate current, reduces the purpose that class ab ammplifier bottom is made an uproar.
Description
Technical field
It is espespecially a kind of that the AB class amplification made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor the present invention relates to class ab ammplifier field
Device.
Background technique
Class-a amplifier turn-on time is 100%, therefore the higher linearity can be obtained, but class-a amplifier quiescent biasing
Electric current is larger, at the center of load point, in no signal or only intermittent signal, it may appear that sizable power damage
It loses, therefore efficiency is lower.Opposite class-a amplifier, class-b amplifier are a kind of complementary export structures, and two transistors cannot
It works at the same time, quiescent bias current is essentially 0, therefore efficiency is higher, the half period simultaneously because each device works, when conducting
Between only 50%, there are biggish intermodulation distortions, have seriously affected the performance of amplifier.
And the output device working time of class ab ammplifier is greater than half period and is less than a cycle, turn-on time exists
Between 50-100%, it adds forward bias voltage appropriate by two transistor input terminals in class-b amplifier, makes two
Transistor will not thoroughly end, and eliminate intermodulation distortion.Class ab ammplifier had both improved the non-linear of class-b amplifier, and efficiency is again
It is the efficient combination of the high linearity and class-b amplifier of class-a amplifier higher than A class.
Class ab ammplifier uses push-pull output, typical to bias framework p-type output mos pipe and N-type output as shown in Figure 1:
Metal-oxide-semiconductor is output driving pipe, and the first p-type biases metal-oxide-semiconductor, and the second p-type biases metal-oxide-semiconductor, and the first N-type biases metal-oxide-semiconductor, the second N-type
Biasing metal-oxide-semiconductor is p-type output mos pipe, N-type output mos pipe provides bias voltage, so that p-type output mos pipe and N-type output mos
Pipe is in weak on state when static state, and quiescent current is smaller, to improve whole efficiency, wherein p-type output mos pipe
Grid voltage VPG i.e. the first bias voltage is related to the first p-type biasing grid voltage VPB of metal-oxide-semiconductor, and the grid voltage VNG of N-type output mos pipe is
Second bias voltage is related to the first N-type biasing grid voltage VNB of metal-oxide-semiconductor.When the first p-type biases metal-oxide-semiconductor, the second p-type biases MOS
After pipe, the first N-type biasing metal-oxide-semiconductor, the second N-type biasing metal-oxide-semiconductor determine, by adjusting VPB, adjustable p-type output mos pipe
Grid voltage VPG i.e. the first bias voltage；By adjusting VNB, the grid voltage VNG of adjustable N-type output mos pipe i.e. the second biased electrical
Pressure.
Substrate leakage current will form due to hot carrier's effect to metal-oxide-semiconductor.Due to substrate leakage current and channel current and
Electric field strength is related, therefore when other conditions determine substantially, substrate leakage current is substantially in a linear relationship with channel current, works as electricity
When source voltage increases, the Vds that the first N-type biasing metal-oxide-semiconductor, the first p-type bias metal-oxide-semiconductor is increased with it, after increasing to a certain extent,
Its substrate leakage current meeting highly significant, so that class ab ammplifier bias area phasing back, gain occurs after supply voltage increase
The phenomenon that reduction, after supply voltage increases, the bottom of class ab ammplifier, which is made an uproar, to be gradually increased, and will appear an extreme value, sternly
The supply voltage working range for affecting class ab ammplifier of weight.
Due to this problem, class ab ammplifier is perplexed in the higher application of voltage, in order to solve this problem, is needed
The phenomenon that eliminating positive feedback can use special MOS device, as high-pressure MOS component or specifically developed reduction serve as a contrast
The MOS device of bottom electric current.But this mode can bring the promotion of cost, reduce the competitiveness of product.
Summary of the invention
The class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor the object of the present invention is to provide a kind of, realizes not volume
It is outer using high-pressure MOS component or it is specifically developed reduce substrate current MOS device eliminate positive feedback, reduce class ab ammplifier
The purpose that bottom is made an uproar.
Technical solution provided by the invention is as follows:
The present invention provides a kind of class ab ammplifier made an uproar based on series connection pressure limiting metal-oxide-semiconductor reduction bottom, comprising:
Metal-oxide-semiconductor output module, second of the second bias voltage of first port and access including accessing the first bias voltage
Port；
Metal-oxide-semiconductor biases control module, including the first N-type biasing metal-oxide-semiconductor, the second N-type bias metal-oxide-semiconductor, the biasing of the first p-type
Metal-oxide-semiconductor, the second p-type bias metal-oxide-semiconductor；
The second p-type biasing metal-oxide-semiconductor biases metal-oxide-semiconductor with first N-type respectively and the first p-type biasing metal-oxide-semiconductor is connected
Export first bias voltage；The second N-type biasing metal-oxide-semiconductor biases metal-oxide-semiconductor and the first p-type with first N-type respectively
It biases metal-oxide-semiconductor series connection and exports second bias voltage；
Wherein, the first N-type biasing metal-oxide-semiconductor and second p-type bias several N-type pressure limitings of connecting between metal-oxide-semiconductor
Metal-oxide-semiconductor, several p-type pressure limiting metal-oxide-semiconductors of connecting between the first p-type biasing metal-oxide-semiconductor and second N-type biasing metal-oxide-semiconductor.
Further, the metal-oxide-semiconductor output module includes:
P-type output mos pipe and N-type output mos pipe；The source electrode of the p-type output mos pipe connects to power supply, and the p-type is defeated
Metal-oxide-semiconductor and the N-type output mos pipe common drain and the output end as class ab ammplifier out, the source of the N-type output mos pipe
Pole ground connection；Wherein, the first port is the grid of the p-type output mos pipe, and the second port is the N-type output mos
Grid.
Further, the metal-oxide-semiconductor biasing control module includes:
First input end of the grid of the second p-type biasing metal-oxide-semiconductor as class ab ammplifier, the second p-type biasing
The source electrode of metal-oxide-semiconductor connects to power supply, and the drain electrode of the second p-type biasing metal-oxide-semiconductor biases metal-oxide-semiconductor with first p-type respectively
The drain electrode of source electrode, first N-type biasing metal-oxide-semiconductor is connected with the grid of the p-type output mos pipe；
The source electrode of the first p-type biasing metal-oxide-semiconductor is connect with the grid of the p-type output mos pipe, drain electrode and the N-type
The grid of output mos pipe connects；The drain electrode of the first N-type biasing metal-oxide-semiconductor is connect with the grid of the p-type output mos pipe, source
Pole is connect with the grid of the N-type output mos pipe；
Second input terminal of the grid of the second N-type biasing metal-oxide-semiconductor as class ab ammplifier, the second N-type biasing
The drain electrode of metal-oxide-semiconductor biases the source electrode of metal-oxide-semiconductor, the drain electrode of first p-type biasing metal-oxide-semiconductor and the N with first N-type respectively
The grid of type output mos pipe connects, the source electrode ground connection of the second N-type biasing metal-oxide-semiconductor；
The source electrode of the N-type pressure limiting metal-oxide-semiconductor adjacent with first N-type biasing metal-oxide-semiconductor and first N-type bias metal-oxide-semiconductor
Drain electrode connection, bias metal-oxide-semiconductor with the second p-type adjacent N-type pressure limiting metal-oxide-semiconductor of biasing metal-oxide-semiconductor and second p-type and leak altogether
Pole；
The source electrode of the p-type pressure limiting metal-oxide-semiconductor adjacent with first p-type biasing metal-oxide-semiconductor and first p-type bias metal-oxide-semiconductor
Drain electrode connection, bias metal-oxide-semiconductor with the second N-type adjacent p-type pressure limiting metal-oxide-semiconductor of biasing metal-oxide-semiconductor and second N-type and leak altogether
Pole.
A kind of class ab ammplifier made an uproar based on series connection pressure limiting metal-oxide-semiconductor reduction bottom provided through the invention, can be realized not
It is additional that high-pressure MOS component or the specifically developed MOS device for reducing substrate current is used to eliminate positive feedback, reduce the amplification of AB class
The purpose that device bottom is made an uproar.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, to one kind based on series connection pressure limiting MOS
Above-mentioned characteristic, technical characteristic, advantage and its implementation that pipe reduces the class ab ammplifier that bottom is made an uproar are further described.
Fig. 1 is the structural schematic diagram of class ab ammplifier in the prior art；
Fig. 2 be in the prior art high Vds voltage when biasing NMOS tube substrate leakage current variation schematic diagram；
Fig. 3 be in the prior art low Vds voltage when biasing NMOS tube substrate leakage current variation schematic diagram；
Fig. 4 is the relation schematic diagram of the substrate leakage current and channel current of N-type and p-type offset in the prior art；
Fig. 5 is that class ab ammplifier voltage and current becomes with input when the voltage value of power vd D in the prior art is equal to 5.5V
Change schematic diagram；
Fig. 6 is the structural schematic diagram of typical AB class amplifier operating circuit；
Fig. 7 is the variation schematic diagram that the bottom of class ab ammplifier in the prior art is made an uproar with supply voltage；
Fig. 8 is that the structure of the one embodiment for reducing the class ab ammplifier that bottom is made an uproar the present invention is based on series connection pressure limiting metal-oxide-semiconductor is shown
It is intended to；
Fig. 9 is that the present invention is based on series connection pressure limiting metal-oxide-semiconductors to reduce the change made an uproar with supply voltage at the bottom for the class ab ammplifier that bottom is made an uproar
Change schematic diagram.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.In addition, there is identical structure or function in some figures so that simplified form is easy to understand
Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated
" only this ", can also indicate the situation of " more than one ".
In metal-oxide-semiconductor, S is source electrode, and D is drain electrode, and G is grid.
Class ab ammplifier uses push-pull output, typical to bias framework p-type output mos pipe (P0) and N-type as shown in Figure 1:
Output mos pipe (N0) is output driving pipe, and the first p-type biases metal-oxide-semiconductor (P1), and the second p-type biases metal-oxide-semiconductor (P2), and the first N-type is inclined
It sets metal-oxide-semiconductor (N1), it is p-type output mos pipe (P0), N-type output mos pipe (N0) offer biased electrical that the second N-type, which biases metal-oxide-semiconductor (N2),
Pressure, so that p-type output mos pipe (P0) and N-type output mos pipe (N0) are in weak on state, quiescent current when static state
It is smaller, to improve whole efficiency, wherein i.e. the first bias voltage of the grid voltage of p-type output mos pipe (P0) (VPG) and the first p-type
The grid voltage VPB for biasing metal-oxide-semiconductor (P1) is related, i.e. the second bias voltage of the grid voltage of N-type output mos pipe (N0) (VNG) and the first N-type
The grid voltage VNB for biasing metal-oxide-semiconductor (N1) is related, when the first p-type biases metal-oxide-semiconductor (P1), the second p-type biases metal-oxide-semiconductor (P2), the first N
After type biases metal-oxide-semiconductor (N1), the second N-type biasing metal-oxide-semiconductor (N2) determines, by adjusting VPB, adjustable p-type output mos pipe
(P0) i.e. the first bias voltage of grid voltage (VPG)；By adjusting VNB, the grid voltage of adjustable N-type output mos pipe (N0) i.e.
Two bias voltages (VNG).
In order to control the through current of p-type output mos pipe (P0) and N-type output mos pipe (N0), when static, p-type output
The Vgs (voltage between the pole G and the pole S) of metal-oxide-semiconductor (P0) is substantially near Vthp (threshold value), and N-type output mos pipe (N0)
Vgs (voltage between the pole G and the pole S) is substantially near Vthn (threshold value), then:
First bias voltage (VPG) ≈ VDD-Vthp；
Wherein, VDD is the voltage value of power supply, and Vthp is the voltage threshold of p-type output mos pipe (P0).
Second bias voltage (VNG) ≈ Vthn；
Wherein, Vthn is the voltage threshold of N-type output mos pipe (N0).
Then the Vds of the first p-type biasing metal-oxide-semiconductor (P1), the first N-type biasing metal-oxide-semiconductor (N1) is equal to the first bias voltage (VPG)
Subtract the second bias voltage (VNG), i.e. VDD-Vthp-Vthn.
Substrate leakage current will form due to hot carrier's effect to metal-oxide-semiconductor, the reason is that strong electrical field in channel, makes channel
Carrier collides ionization, produces electron-hole pair, a part of hot carrier is formed from drain electrode (D) into substrate
Substrate leakage current.Since substrate leakage current is related to channel current and electric field strength, work as the Vds (electricity between the pole D and the pole S
Pressure) it is fixed when, with the increase of Vgs, channel current constantly increases, but as Vgs continues to increase, transverse electric field intensity starts
Reduce, therefore during Vgs becomes larger, substrate leakage current will appear a peak value, as shown in Figures 2 and 3.
Since substrate leakage current is generated by channel carrier ionization by collision, when other conditions determine substantially, substrate
Leakage current is substantially in a linear relationship with channel current, as shown in Figure 4.
In the case where not considering substrate leakage current or very small substrate leakage current, aforementioned class ab ammplifier recommends portion
Outputting and inputting for dividing is in phase.When the voltage value of power supply (VDD) increases, the first N-type biases metal-oxide-semiconductor (N1), the first P
The Vds of type biasing metal-oxide-semiconductor (P1) is increased with it, after increasing to a certain extent, substrate leakage current meeting highly significant, for example, the
The substrate leakage current of one N-type biasing metal-oxide-semiconductor (N1) is 143nA, and the substrate leakage current that the first p-type biases metal-oxide-semiconductor (P1) is 8nA.
The working condition of circuit at this time is analyzed below, by taking NMOS as an example, as shown in Figure 5.Do not consider substrate leakage
In the case where stream, the grid voltage that the second p-type biases metal-oxide-semiconductor (P2) increases, and the channel current that the second p-type biases metal-oxide-semiconductor (P2) reduces,
Then the first bias voltage (VPG) reduces, and the electric current for flowing through the first p-type biasing metal-oxide-semiconductor (P1) becomes smaller (Vgs becomes smaller), flows through the first N
The electric current that type biases metal-oxide-semiconductor (N1) increases.After considering substrate leakage current, the first N-type biasing metal-oxide-semiconductor (N1) has apparent substrate to leak
Electric current, the channel current for flowing through the first N-type biasing metal-oxide-semiconductor (N1) become larger, then the substrate leakage of the first N-type biasing metal-oxide-semiconductor (N1)
Stream can be bigger, biases metal-oxide-semiconductor (P2) ditch when the rate of change of the first N-type biasing metal-oxide-semiconductor (N1) substrate leakage current is greater than the second p-type
When the rate of change of road electric current, it cannot balance here, under normal circumstances, since the impedance of the node is very big, nA grades of electric currents
Variation be just enough to cause very big voltage change, when the first N-type biasing metal-oxide-semiconductor (N1) substrate leakage current reache a certain level
When, the variation of substrate leakage current can easily exceed the variation of the second p-type biasing metal-oxide-semiconductor (P2) channel current, so putting down in new
In weighing apparatus, the reduction of bias area electric current is mainly determined by the reduction of the first N-type biasing metal-oxide-semiconductor (N1) leakage current.Therefore when the second p-type
When biasing the grid voltage increase of metal-oxide-semiconductor (P2), the channel current for flowing through the first N-type biasing metal-oxide-semiconductor (N1) reduces, substrate leakage current
Reduce, and amplitude is greater than the first p-type biasing metal-oxide-semiconductor (P1) channel current and reduces amplitude, is equivalent to VPG Injection Current, causes
First bias voltage (VPG) increases, and causes the electric current for flowing through the first p-type biasing metal-oxide-semiconductor (P1) to increase, in turn to reach new
Balance, final result are that the second p-type biases metal-oxide-semiconductor (P2) grid voltage and the first bias voltage (VPG) in the same direction, and whole system becomes
Positive feedback.
When the variation of the substrate leakage current of the first N-type biasing metal-oxide-semiconductor (N1) determines bias area curent change, one can be also generated
A influence, when the voltage value of power supply (VDD) constantly increases, the Vds that the first N-type biases metal-oxide-semiconductor (N1) is increasing, substrate leakage
Flow increasingly severe, therefore curent change caused by identical voltage change is increasing, is equivalent to the equivalent impedance of bias area
Smaller and smaller, the amplification factor of class ab ammplifier is also smaller and smaller.
To a typical AB class amplifier operating circuit, as shown in Figure 6.
Vo=-Av*Va；Vni=Va-Vb
Wherein, gain Av, input resistance R1, feedback resistance R2, Vni are that (noise of R1, R2's makes an uproar equivalent noise
Sound, the input noise etc. of amplifier), Vo is output noise.Therefore, it can be calculated:
When class ab ammplifier gain A v is positive number, with the reduction of Av, Vo is smaller and smaller；When Av is negative,
There is an extreme point, when Av=- β=- (R1+R2)/R1, Av tend to extreme point, Vo is sharply deteriorated, and (loop gain is at this time
Av* (1/ β)=- 1 forms positive feedback).In conjunction with front class ab ammplifier bias area power supply (VDD) voltage value increase after phase
The phenomenon that bit reversal, gain reduction, after the voltage value of power supply (VDD) increases, the meeting as shown in fig. 7, bottom of class ab ammplifier is made an uproar
It is gradually increased, and will appear an extreme value, the serious working range for affecting class ab ammplifier.Due to this problem, AB
Class A amplifier A is perplexed in the higher application of voltage, simultaneously because the size of substrate leakage current is related to technique, difference batch
Secondary substrate leakage current situation is also not quite similar, and can only reduce its application range, guarantees the correct of work.It is asked to solve this
Topic, needs the phenomenon that eliminating positive feedback, special MOS device can be used, such as high tension apparatus or specifically developed reduction
The device of substrate current.But this mode can bring the promotion of cost, reduce the competitiveness of product.
The present invention is based on the embodiments that series connection pressure limiting metal-oxide-semiconductor reduces the class ab ammplifier that bottom is made an uproar, as shown in Figure 8, comprising:
Metal-oxide-semiconductor output module, the second bias voltage of first port and access including accessing the first bias voltage (VPG)
(VNG) second port；
Metal-oxide-semiconductor biases control module, including the first N-type biasing metal-oxide-semiconductor (N1), the second N-type biasing metal-oxide-semiconductor (N2), the first P
Type biases metal-oxide-semiconductor (P1), the second p-type biasing metal-oxide-semiconductor (P2)；
Second p-type biasing metal-oxide-semiconductor (P2) biases with first N-type biasing metal-oxide-semiconductor (N1) and the first p-type respectively
Metal-oxide-semiconductor (P1) series connection exports first bias voltage (VPG)；Second N-type biasing metal-oxide-semiconductor (N2) is respectively with described first
N-type biases metal-oxide-semiconductor (N1) and the first p-type biasing metal-oxide-semiconductor (P1) series connection exports second bias voltage (VNG)；
Wherein, several are connected between the first N-type biasing metal-oxide-semiconductor (N1) and second p-type biasing metal-oxide-semiconductor (P2)
N-type pressure limiting metal-oxide-semiconductor (NB1 ..., NBn), first p-type biasing metal-oxide-semiconductor (P1) and second N-type biasing metal-oxide-semiconductor (N2) it
Between connect several p-type pressure limiting metal-oxide-semiconductors (PB1 ..., PBm).
The metal-oxide-semiconductor output module includes:
P-type output mos pipe (P0) and N-type output mos pipe (N0)；The source electrode (S) and electricity of the p-type output mos pipe (P0)
Source (VDD) connection, the p-type output mos pipe (P0) and N-type output mos pipe (N0) common drain (D) are simultaneously amplified as AB class
The output end of device, source electrode (S) ground connection of the N-type output mos pipe (N0)；Wherein, the first port is p-type output
The grid (G) of metal-oxide-semiconductor (P0), the second port are the grid (G) of the N-type output mos.
First input end of the grid (G) of second p-type biasing metal-oxide-semiconductor (P2) as class ab ammplifier, the 2nd P
The source electrode (S) of type biasing metal-oxide-semiconductor (P2) is connect with power supply (VDD), and the drain electrode (D) of the second p-type biasing metal-oxide-semiconductor (P2) is respectively
With the source electrode (S) of first p-type biasing metal-oxide-semiconductor (P1), the drain electrode (D) of first N-type biasing metal-oxide-semiconductor (N1) and the P
The grid (G) of type output mos pipe (P0) connects；
The source electrode (S) of first p-type biasing metal-oxide-semiconductor (P1) is connect with the grid (G) of the p-type output mos pipe (P0),
Drain electrode (D) is connect with the grid (G) of the N-type output mos pipe (N0)；The drain electrode (D) of first N-type biasing metal-oxide-semiconductor (N1)
It is connect with the grid (G) of the p-type output mos pipe (P0), the grid (G) of source electrode (S) and the N-type output mos pipe (N0) is even
It connects；
Second input terminal of the grid (G) of second N-type biasing metal-oxide-semiconductor (N2) as class ab ammplifier, the 2nd N
The drain electrode (D) that type biases metal-oxide-semiconductor (N2) is inclined with the source electrode (S) of first N-type biasing metal-oxide-semiconductor (N1), first p-type respectively
The drain electrode (D) of metal-oxide-semiconductor (P1) and grid (G) connection of the N-type output mos pipe (N0) are set, second N-type biases metal-oxide-semiconductor
(N2) source electrode (S) ground connection；
The source electrode (S) and the first N of adjacent N-type pressure limiting metal-oxide-semiconductor (NB1) with first N-type biasing metal-oxide-semiconductor (N1)
Type biases drain electrode (D) connection of metal-oxide-semiconductor (N1), the adjacent N-type pressure limiting metal-oxide-semiconductor with second p-type biasing metal-oxide-semiconductor (P2)
(NBn) metal-oxide-semiconductor (P2) common drain (D) is biased with second p-type；
The source electrode (S) and the first P of adjacent p-type pressure limiting metal-oxide-semiconductor (PB1) with first p-type biasing metal-oxide-semiconductor (P1)
Type biases drain electrode (D) connection of metal-oxide-semiconductor (P1), the adjacent p-type pressure limiting metal-oxide-semiconductor with second N-type biasing metal-oxide-semiconductor (N2)
(PBm) metal-oxide-semiconductor (N2) common drain (D) is biased with second N-type.
Specifically, when connect a N-type pressure limiting metal-oxide-semiconductor when, N-type pressure limiting metal-oxide-semiconductor (NB1) both with the first N-type bias metal-oxide-semiconductor
(NB1) adjacent, also adjacent with the second p-type biasing metal-oxide-semiconductor (P2), the i.e. source electrode (S) and described first of N-type pressure limiting metal-oxide-semiconductor (NB1)
N-type biases drain electrode (D) connection of metal-oxide-semiconductor (N1), and the drain electrode (D) of N-type pressure limiting metal-oxide-semiconductor (NB1) biases MOS with the second p-type respectively
The drain electrode (D) of (P2) is managed, the first p-type biases grid (G) connection of the source electrode (S) and p-type output mos pipe (P0) of metal-oxide-semiconductor (P1).
When connect two or more N-type pressure limiting metal-oxide-semiconductor when, the source electrode (S) and the first N of N-type pressure limiting metal-oxide-semiconductor (NB1)
Type biases drain electrode (D) connection of metal-oxide-semiconductor (N1), drain electrode (D) and the N-type pressure limiting metal-oxide-semiconductor (NBn) of N-type pressure limiting metal-oxide-semiconductor (NB1)
Source electrode (S) connection, the drain electrode (D) of N-type pressure limiting metal-oxide-semiconductor (NBn) drain electrode (D) with the second p-type biasing metal-oxide-semiconductor (P2) respectively, the
One p-type biases grid (G) connection of the source electrode (S) and p-type output mos pipe (P0) of metal-oxide-semiconductor (P1).Wherein, n is more than or equal to 2.
Similarly, connect several P between the first p-type biasing metal-oxide-semiconductor (P1) and second N-type biasing metal-oxide-semiconductor (N2)
Type pressure limiting metal-oxide-semiconductor (PB1 ..., PBm) is also in this way, this is no longer going to repeat them.
By biasing metal-oxide-semiconductor (N1) in the first N-type, the first p-type biases and is superimposed metal-oxide-semiconductor on metal-oxide-semiconductor (P1), limits the first N
Type biases the Vds (i.e. source-drain voltage) of metal-oxide-semiconductor (N1), the first p-type biasing metal-oxide-semiconductor (P1).It is reference with Fig. 8, with the level-one P that connects
Type pressure limiting metal-oxide-semiconductor (PB1) is illustrated, in drain electrode (D) the series connection p-type pressure limiting metal-oxide-semiconductor of the first p-type biasing metal-oxide-semiconductor (P1)
(PB1), then the first p-type biases the drain voltage VDP1 of metal-oxide-semiconductor (P1) by the grid voltage VBP1 and p-type of p-type pressure limiting metal-oxide-semiconductor (PB1)
The threshold value Vthp decision of pressure limiting metal-oxide-semiconductor (PB1), i.e. VDP1=VBP1-Vthp.When no series connection pressure limiting metal-oxide-semiconductor, first
P-type biases the source-drain voltage Vds=VPG-VNG of metal-oxide-semiconductor (P1), therefore the source-drain voltage Vds of the first p-type biasing metal-oxide-semiconductor (P1)
When larger, apparent substrate leakage can be caused, the increase made an uproar the bottom of so as to cause.Series voltage limiter part, that is, p-type pressure limiting metal-oxide-semiconductor
(PB1) after, the first p-type biases the source-drain voltage Vds=VPG- (VBP1-Vthp) of metal-oxide-semiconductor (P1), by the way that VBP1 appropriate is arranged
Voltage will not cause apparent substrate leakage so that the source-drain voltage of the first p-type biasing metal-oxide-semiconductor (P1) reduces, so as to avoid
The increase that bottom is made an uproar.One p-type pressure limiting metal-oxide-semiconductor of series connection is only illustrated herein, and for connecting, more than one p-type pressure limiting metal-oxide-semiconductor is carried out
This is no longer going to repeat them for the source-drain voltage of pressure limiting reduction the first p-type biasing metal-oxide-semiconductor (P1).In addition, for N-type pressure limiting of connecting
Metal-oxide-semiconductor realizes that the source-drain voltage for reducing the first N-type biasing metal-oxide-semiconductor (N1) is also not described in detail herein, reduces the biasing of the first N-type
The principle and aforementioned p-type pressure limiting metal-oxide-semiconductor of the source-drain voltage of metal-oxide-semiconductor (N1) reduce the source-drain voltage of the first p-type biasing metal-oxide-semiconductor (P1)
Principle it is consistent.To in current class ab ammplifier when high power supply voltage at the bottom of make an uproar abnormal problem, eliminate bias area MOS
The substrate leakage current of device, solve the problems, such as high power supply voltage bottom make an uproar it is abnormal, improve application in working range.It uses
After the method for the present invention, bottom is made an uproar as shown in Figure 9, it can be seen that, the bottom in the case of high power supply voltage makes an uproar to have obtained good control.
The selection for paying particular attention to VBNn and VBPm makes the first N-type biasing metal-oxide-semiconductor (N1), the first p-type biasing metal-oxide-semiconductor
(P1) work is in reasonable working range.By taking the first N-type biases metal-oxide-semiconductor (N1) as an example, if Vds_nmos < 2V in the technique
When, the substrate leakage current of NMOS can be ignored, then the second bias voltage of VBNn=(VNG)+2*n+Vth_nmos.Similarly, if
In the technique when Vds_pmos < 2V, the substrate leakage current of PMOS can be ignored, then the first bias voltage of VBPm=(VPG) -2*n-
Vth_pmos。
It should be noted that when supply voltage is continuously improved, although the first N-type biases metal-oxide-semiconductor (N1), the first P
The substrate leakage current of type biasing metal-oxide-semiconductor (P1) can be ignored, but pressure limiting metal-oxide-semiconductor NB, PB may generate biggish substrate leakage
The phenomenon that flowing, still will appear abnormal positive feedback, need to connect at this time more pressure limiting metal-oxide-semiconductors, guarantees all metal-oxide-semiconductors not
Biggish substrate leakage current can be generated.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (3)
1. a kind of reduce the class ab ammplifier made an uproar at bottom based on series connection pressure limiting metal-oxide-semiconductor characterized by comprising
Metal-oxide-semiconductor output module, the second port of the second bias voltage of first port and access including accessing the first bias voltage；
Metal-oxide-semiconductor biases control module, including the first N-type biases metal-oxide-semiconductor, the second N-type biases metal-oxide-semiconductor, the first p-type biasing metal-oxide-semiconductor,
Second p-type biases metal-oxide-semiconductor；
Output that second p-type biasing metal-oxide-semiconductor biases metal-oxide-semiconductor with first N-type respectively and the first p-type biasing metal-oxide-semiconductor is connected
First bias voltage；Metal-oxide-semiconductor is biased with first N-type respectively for the second N-type biasing metal-oxide-semiconductor and the first p-type biases
Metal-oxide-semiconductor series connection exports second bias voltage；
Wherein, connect several N-type pressure limitings MOS between the first N-type biasing metal-oxide-semiconductor and second p-type biasing metal-oxide-semiconductor
Pipe, several p-type pressure limiting metal-oxide-semiconductors of connecting between the first p-type biasing metal-oxide-semiconductor and second N-type biasing metal-oxide-semiconductor.
2. according to claim 1 reduce the class ab ammplifier made an uproar at bottom based on series connection pressure limiting metal-oxide-semiconductor, which is characterized in that institute
Stating metal-oxide-semiconductor output module includes:
P-type output mos pipe and N-type output mos pipe；The source electrode of the p-type output mos pipe connects to power supply, the p-type output
Metal-oxide-semiconductor and the N-type output mos pipe common drain and the output end as class ab ammplifier, the source electrode of the N-type output mos pipe
Ground connection；Wherein, the first port is the grid of the p-type output mos pipe, and the second port is the N-type output mos
Grid.
3. according to claim 2 reduce the class ab ammplifier made an uproar at bottom based on series connection pressure limiting metal-oxide-semiconductor, which is characterized in that institute
Stating metal-oxide-semiconductor biasing control module includes:
First input end of the grid of the second p-type biasing metal-oxide-semiconductor as class ab ammplifier, second p-type bias metal-oxide-semiconductor
Source electrode connect to power supply, the drain electrode of second p-type biasing metal-oxide-semiconductor respectively with the source electrode of first p-type biasing metal-oxide-semiconductor,
The drain electrode of the first N-type biasing metal-oxide-semiconductor is connected with the grid of the p-type output mos pipe；
The source electrode of the first p-type biasing metal-oxide-semiconductor is connect with the grid of the p-type output mos pipe, and drain electrode is exported with the N-type
The grid of metal-oxide-semiconductor connects；The drain electrode of first N-type biasing metal-oxide-semiconductor is connect with the grid of the p-type output mos pipe, source electrode and
The grid of the N-type output mos pipe connects；
Second input terminal of the grid of the second N-type biasing metal-oxide-semiconductor as class ab ammplifier, second N-type bias metal-oxide-semiconductor
Drain electrode respectively with first N-type biasing metal-oxide-semiconductor source electrode, first p-type biasing metal-oxide-semiconductor drain electrode and the N-type it is defeated
The grid connection of metal-oxide-semiconductor out, the source electrode ground connection of the second N-type biasing metal-oxide-semiconductor；
The leakage of the source electrode of the N-type pressure limiting metal-oxide-semiconductor adjacent with first N-type biasing metal-oxide-semiconductor and first N-type biasing metal-oxide-semiconductor
Pole connection, the N-type pressure limiting metal-oxide-semiconductor adjacent with second p-type biasing metal-oxide-semiconductor and second p-type bias metal-oxide-semiconductor common drain；
The leakage of the source electrode of the p-type pressure limiting metal-oxide-semiconductor adjacent with first p-type biasing metal-oxide-semiconductor and first p-type biasing metal-oxide-semiconductor
Pole connection, the p-type pressure limiting metal-oxide-semiconductor adjacent with second N-type biasing metal-oxide-semiconductor and second N-type bias metal-oxide-semiconductor common drain.
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| CN201811261113.1A CN109104158A (en) | 2018-10-26 | 2018-10-26 | It is a kind of that the class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor |
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| CN201811261113.1A CN109104158A (en) | 2018-10-26 | 2018-10-26 | It is a kind of that the class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI773474B (en) * | 2021-08-03 | 2022-08-01 | 新唐科技股份有限公司 | Amplifier circuit |
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| CN1387315A (en) * | 2001-05-18 | 2002-12-25 | 阿尔卡塔尔公司 | Operational amplifier device comprising static current control circuit |
| CN1925317A (en) * | 2005-09-02 | 2007-03-07 | 中兴通讯股份有限公司 | AB kind amplifier |
| EP2278712A1 (en) * | 2009-07-01 | 2011-01-26 | STMicroelectronics (Rousset) SAS | Integrated circuit including a broadband high-voltage buffer circuit |
| CN102158180A (en) * | 2011-03-28 | 2011-08-17 | 浙江大学 | Switch-type operation amplifier with low power consumption |
| CN208924194U (en) * | 2018-10-26 | 2019-05-31 | 上海海栎创微电子有限公司 | It is a kind of that the class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1387315A (en) * | 2001-05-18 | 2002-12-25 | 阿尔卡塔尔公司 | Operational amplifier device comprising static current control circuit |
| CN1925317A (en) * | 2005-09-02 | 2007-03-07 | 中兴通讯股份有限公司 | AB kind amplifier |
| EP2278712A1 (en) * | 2009-07-01 | 2011-01-26 | STMicroelectronics (Rousset) SAS | Integrated circuit including a broadband high-voltage buffer circuit |
| CN102158180A (en) * | 2011-03-28 | 2011-08-17 | 浙江大学 | Switch-type operation amplifier with low power consumption |
| CN208924194U (en) * | 2018-10-26 | 2019-05-31 | 上海海栎创微电子有限公司 | It is a kind of that the class ab ammplifier made an uproar at bottom is reduced based on series connection pressure limiting metal-oxide-semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI773474B (en) * | 2021-08-03 | 2022-08-01 | 新唐科技股份有限公司 | Amplifier circuit |
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