CN109103025A - Application of the SiC nanohole array in supercapacitor - Google Patents
Application of the SiC nanohole array in supercapacitor Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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Abstract
The present invention relates to application of the SiC nanohole array in supercapacitor, belong to technical field of nano material.The electrode of the supercapacitor is integrated by SiC nanohole array.Coordinating for the SiC nanohole array is divided into 4H-SiC, and the nano-pore of the SiC nanohole array is vertical cellular structure, bore dia 5-40nm, a length of 8-20 μm of hole.SiC nano-hole array electrode material has bigger serface, preferable electric conductivity and chemical stability and thermal stability in the present invention, the cyclical stability all with higher under the conditions of wider temperature, therefore, SiC nanohole array is integrated into electrode and is used in supercapacitor to improve its circulating temperature under the conditions of wide temperature while guaranteeing supercapacitor high specific capacitance.
Description
Technical field
The present invention relates to application of the SiC nanohole array in supercapacitor, belong to technical field of nano material.
Background technique
The fast development of global economy accelerates the consumption of the energy, and thus the exhaustion of bring fossil energy and environmental pollution are asked
Topic, has become the serious problem of current facing mankind.For the sustainable development for guaranteeing human society, reproducible clean energy resource
(such as solar energy, wind energy, tide energy etc.) more and more attention has been paid to.However, natural conditions and geographic factor are to these energy
Lasting supply influences very big.Therefore, it develops high performance energy conversion and storage equipment receives the great attention of people, at present
Have been put into that a large amount of the Study on Resources is cheap, high-performance, safe and reliable energy storage equipment.In such devices, super
Capacitor is considered a kind of preferably with the environmentally friendly device of fast charging and discharging characteristic.
Silicon carbide (SiC) is a kind of important third generation wide bandgap semiconductor, the characteristic for having series excellent, including high electricity
Transport factor, high breakdown field strength, high heat conductance, excellent mechanical performance, excellent radiation resistance keep SiC material wide
In electronic device under the general severe service condition applied to high temperature and pressure etc..In supercapacitor, by the super of SiC material preparation
Grade electrode for capacitors has shown excellent chemical property.The SiC composite S i nano line electrode of the reports such as Alper, than electricity
Rong Da is 1.7mF cm-2, can stablize cycle charge-discharge thousands of times.Chen et al. reports N doping SiC nano-array as super electricity
Container electrode, specific capacitance are 4.7mF cm-2, and can be in up to 30V s-1Superelevation rate under run.These research knots
Fruit shows that SiC nano material has excellent chemical property, shows in electrode material for super capacitor application aspect huge
Potentiality.
However, being only confined under the conditions of room temperature (25 DEG C or so) about the testing research of SiC electrode of super capacitor at present
It carries out.And in practical applications, since use environment temperature is complicated and changeable, the hot and cold alternation as caused by seasonal variations, equipment is opened
Stop the variation etc. of rear temperature, can all cause capacitor operating ambient temperature acute variation.These unfavorable factors can all lead to capacitor
Device service life is shortened in the sharply decline of device performance.Therefore, exploitation has the high-performance super capacitor electricity of wide warm applicability
Pole material, to become problem in science urgently to be resolved at present.
Summary of the invention
The purpose of the present invention is being directed to the above-mentioned problems in the prior art, provide it is a kind of have under the conditions of wide temperature compared with
The SiC nano-hole array electrode of good cyclical stability, can effectively apply in supercapacitor.
Object of the invention can be realized by the following technical scheme: SiC nanohole array answering in supercapacitor
With the electrode of supercapacitor is integrated by SiC nanohole array.
The present invention is by the SiC nano-pore with bigger serface, preferable electric conductivity and chemical stability and thermal stability
Array, at electrode, i.e. collector and active object integrated design, keeps active material and afflux body heat swollen using integrated design
Swollen coefficients match, it is not easily to fall off, simultaneously because SiC nano-hole array electrode material is under the conditions of wider temperature all with higher
Cyclical stability, therefore by SiC nanohole array be integrated into electrode be used for supercapacitor can guarantee super capacitor
Device improves its circulating temperature under the conditions of wide temperature while having compared with high specific capacitance.
Preferably, the coordinating for SiC nanohole array is divided into 4H-SiC.Further preferably, SiC nanometer
Hole array is that N adulterates SiC nanohole array, and the doping of N is 8-10at.%.The doping of N can be into one at 8-10at.%
Step guarantees the electric conductivity of chip.
Preferably, the nano-pore of the SiC nanohole array is vertical cellular structure.The SiC of vertical cellular structure
Nanohole array can be shortened electrolyte ion transport path.
Preferably, the bore dia of the SiC nanohole array is 5-40nm, a length of 8-20 μm of hole.The too small meeting in aperture
Decline high rate performance sharply, and aperture can then reduce specific surface area greatly very much, will affect chemical property.
Preferably, the SiC nanohole array is made by the following method: SiC wafer is cut into the size of needs, point
It is not cleaned by ultrasonic in alcohol, deionized water, then impregnates in the ethanol solution containing HF acid, then dry, then will cleaning
The acidproof protective glue of PVC is sticked at the SiC wafer back side after drying, finally makees anode with SiC wafer, and carbon plate makees cathode, in etching liquid
In, it is etched 6-10 minutes with pulse power anodic oxidation and obtains SiC nanohole array.
Further preferably, the SiC wafer is technical grade (1 diameter of surface scratch cumulative length <, and number≤3
Item.Micropipe density≤1 cm-2)。
Further preferably, pulse power duty ratio is 50%, frequency 1-1.5MHz.
Further preferably, the pulse power is with constant current density 120-200mA cm-2It performs etching.
Further preferably, etching liquid is the mixed liquor of hydrofluoric acid, ethyl alcohol, hydrogen peroxide, hydrofluoric acid, ethyl alcohol, hydrogen peroxide three
Volume ratio be (3-8): 6:1.In etching liquid the too big etching of HF acid amount can bad control, SiC nanohole array obtained is not
Vertical pore structure, and if HF acid amount is very little, etching speed is too slow, and no matter HF acid amount is excessive or very few, can all influence final
The arrangement effect of nanohole array, therefore in order to etch more regular nanohole array pattern, hydrofluoric acid, ethyl alcohol, hydrogen peroxide
The volume ratio of three needs to control in (3-8): 6:1.
SiC nanohole array is clipped on electrode holder, under three-electrode system, using Ag/AgCl electrode as reference electrode, platinum
Plate electrode is to electrode, and 2M KCl solution is electrolyte, carries out electrochemical property test to SiC nano-hole array electrode material,
Measure result are as follows:
Speed is swept from 10mVs-1To 500mVs-1, the specific capacitance of SiC nano-hole array electrode is from 16mF cm-2It is down to 8mF cm-2。
For SiC nano-hole array electrode at room temperature after charge and discharge 10000 times, capacitor retention rate is not less than 96%；
For SiC nano-hole array electrode under the conditions of -10 DEG C after charge and discharge 11000 times, capacitor retention rate is not less than 97.3%；
For SiC nano-hole array electrode under the conditions of 60 DEG C after charge and discharge 11000 times, capacitor retention rate is 96.8%；
Under the temperature match curing conditions that SiC nano-hole array electrode alternately changes at -10 DEG C and 60 DEG C after charge and discharge 11000 times, electricity
Hold retention rate and is not less than 95.5%.
SiC nanohole array in the present invention has biggish specific surface area, preferable electric conductivity and chemical stabilization
Property and thermal stability, when SiC nanohole array is as electrode material, with normal temperature phase ratio, SiC nano-hole array electrode material is in height
Specific capacitance variation under the conditions of temperature slightly improves, and cyclical stability varies less；Specific capacitance variation is dropped under cryogenic conditions
Low and reduced amplitude is smaller, and cyclical stability is slightly improved compared with room temperature；Under the temperature match curing conditions of high and low temperature alternative transformation, electricity
After pole material is by cooling thermal impact repeatedly, it still is able to keep higher cyclical stability.
Compared with prior art, the present invention has the advantage that
1. SiC nano-hole array electrode material, which has, in the present invention will have bigger serface, preferable electric conductivity and change
Learn stability and thermal stability, the cyclical stability all with higher under the conditions of wider temperature, therefore, by SiC nano-pore
Electrode is made for that can improve it in supercapacitor while guaranteeing supercapacitor high specific capacitance in wide warm condition in array
Under circulating temperature.
2. electrode of the present invention is integrated into using SiC nanohole array, i.e. collector and active object integrated design,
Make active material and collector matched coefficients of thermal expansion, it is not easily to fall off, the performance and used life of electrode is further increased, in turn
Improve the service life of supercapacitor.
Detailed description of the invention
Fig. 1 spreads out for the X-ray after integrated monocrystal SiC nano-pore array structure grinding obtained in the embodiment of the present invention 1
Penetrate (XRD) figure；
Scanning electron microscope (SEM) figure of integration monocrystal SiC nano-pore array structure obtained in Fig. 2 embodiment of the present invention 1；
The specific capacitance of SiC nano-pore array structure electrode and fast relation curve is swept in Fig. 3 Application Example 1 of the present invention；
The stable circulation linearity curve of SiC nano-pore array structure electrode in Fig. 4 Application Example 1 of the present invention；
SiC nano-hole array electrode is in -10 DEG C and 100mV s in Fig. 5 Application Example 2 of the present invention-1Under the conditions of measure
Cyclic voltammetry curve.
SiC nano-hole array electrode is in -10 DEG C and 100mV s in Fig. 6 Application Example 2 of the present invention-1Under the conditions of, with circulation
The electrode cycle stability curve that voltammetry measures.
SiC nano-hole array electrode is in 60 DEG C and 100mV s in Fig. 7 Application Example 3 of the present invention-1Under the conditions of measure follow
Ring volt-ampere curve.
SiC nano-hole array electrode is in 60 DEG C and 100mV s in Fig. 8 Application Example 3 of the present invention-1Under the conditions of, with circulation
The electrode cycle stability curve that voltammetry measures.
Fig. 9 is the alternating temperature that SiC nano-hole array electrode alternately changes at 60 DEG C and -10 DEG C in Application Example 4 of the present invention
Under the conditions of, using cyclic voltammetry, in 100mV s-1Sweep the electrode cycle stability curve measured under speed.
Specific embodiment
The following is specific embodiments of the present invention, and is described with reference to the drawings and further retouches to technical solution of the present invention work
It states, however, the present invention is not limited to these examples.
Embodiment 1
Technical grade SiC wafer is cut into the small pieces having a size of 0.7 × 1.5cm, ultrasound is clear in alcohol, deionized water respectively
10min is washed, the SiC wafer cleaned is impregnated 2 points in the ethanol solution (volume ratio of HF and ethyl alcohol is 2:1) containing HF acid
Clock, it is 10 minutes dry in 40 DEG C of baking ovens after taking-up.The acidproof protective glue of PVC is sticked at the SiC wafer back side after cleaning-drying again,
Protective glue 0.7 × 1cm of size, reserved 0.5cm are contacted with electrode holder.
Finally make anode to carry out the SiC wafer of protection, carbon plate makees cathode, presses by hydrofluoric acid, ethyl alcohol and dioxygen aqueous
In the etching liquid that volume ratio 3:6:1 is mixedly configured into, with the pulse power (pulse power duty ratio is 50%, frequency 1.25MHz)
With constant current density 170mA cm-2It carries out anodic oxidation etching and obtains SiC nanohole array in 6-10 minutes.The embodiment system
X-ray diffraction (XRD) figure after the SiC nano-pore array structure grinding obtained is as shown in Figure 1, Fig. 1 shows SiC nanohole array
It coordinates and is divided into 4H-SiC.Scanning electron microscope (SEM) figure of SiC nano-pore array structure made from the embodiment is as shown in Fig. 2, Fig. 2
Illustrate that the nanohole array is vertical cellular structure, bore dia 5-40nm, a length of 8-20 μm of hole.
Embodiment 2
Technical grade SiC wafer is cut into the small pieces having a size of 0.7 × 1.5cm, ultrasound is clear in alcohol, deionized water respectively
8min is washed, the SiC wafer cleaned is impregnated 4 points in the ethanol solution (volume ratio of HF and ethyl alcohol is 2:1) containing HF acid
Clock, it is 8 minutes dry in 45 DEG C of baking ovens after taking-up.The acidproof protective glue of PVC is sticked at the SiC wafer back side after cleaning-drying again,
Protective glue 0.7 × 1cm of size, reserved 0.5cm are contacted with electrode holder.
Finally make anode to carry out the SiC wafer of protection, carbon plate makees cathode, presses by hydrofluoric acid, ethyl alcohol and dioxygen aqueous
In the etching liquid that volume ratio 6:6:1 is mixedly configured into, with the pulse power (pulse power duty ratio is 50%, frequency 1MHz) with perseverance
Fixed current density 120mA cm-2It carries out anodic oxidation etching and obtains SiC nanohole array in 6-10 minutes.
Embodiment 3
Technical grade SiC wafer is cut into the small pieces having a size of 0.7 × 1.5cm, ultrasound is clear in alcohol, deionized water respectively
12min is washed, the SiC wafer cleaned is impregnated 1 point in the ethanol solution (volume ratio of HF and ethyl alcohol is 2:1) containing HF acid
Clock, it is 12 minutes dry in 35 DEG C of baking ovens after taking-up.The acidproof protective glue of PVC is sticked at the SiC wafer back side after cleaning-drying again,
Protective glue 0.7 × 1cm of size, reserved 0.5cm are contacted with electrode holder.
Finally make anode to carry out the SiC wafer of protection, carbon plate makees cathode, presses by hydrofluoric acid, ethyl alcohol and dioxygen aqueous
In the etching liquid that volume ratio 8:6:1 is mixedly configured into, with the pulse power (pulse power duty ratio be 50%, frequency 1.5MHz) with
Constant current density 200mA cm-2It carries out anodic oxidation etching and obtains SiC nanohole array in 6-10 minutes.
Application Example 1
SiC nanohole array obtained in embodiment 1 is integrated into electrode, is sandwiched on electrode holder in three electrodes
Under system, using Ag/AgCl electrode as reference electrode, platinum plate electrode is to electrode, and 2M KCl solution is electrolyte, in room temperature condition
Lower its chemical property of test.Speed is swept according to Fig. 3 from 10mV s-1To 500mV s-1Cyclic voltammetry curve be calculated
Specific capacitance and fast relation curve is swept, in 10mV s-1Sweep under speed, the specific capacitance of SiC nano-hole array electrode up to 14.8,
500mV s-1Sweep under speed, the specific capacitance of SiC nano-hole array electrode still has 8.63mF cm-2, that is, speed is swept from 10mVs-1It arrives
500mVs-1, the specific capacitance of SiC nano-hole array electrode is from 16mF cm-2It is down to 8mFcm-2, show the SiC nanohole array electricity
It is great to have preferable high rate performance.Fig. 4 is following for the SiC nano-hole array electrode measured with cyclic voltammetry under normal temperature condition
Ring stability.After 10000 circulations, the specific capacitance of sample still remains with 96%, and has about 3% to be in 4% lost
As caused by first 2000 times circulations, this shows the SiC nano-hole array electrode more suitable for long-term stability test.
Application Example 2
SiC nanohole array obtained in embodiment 1 is integrated into electrode, is sandwiched on electrode holder in three electrodes
Under system, using Ag/AgCl electrode as reference electrode, platinum plate electrode is to electrode, and 2M KCl solution is electrolyte, low at -10 DEG C
Its chemical property is tested under the conditions of temperature.Fig. 5 is that circulation lies prostrate SiC nano-hole array electrode accordingly under -10 DEG C of cryogenic conditions
Antu, thus test result calculations go out in 100mVs-1Sweep under speed, the specific capacitance of SiC nano-array electrode is 9.51mF cm-2, reach 88.3% of electrode specific capacitance under room temperature.Fig. 6 is the electrode that is measured with cyclic voltammetry under -10 DEG C of cryogenic conditions
Stable circulation linearity curve.The specific capacitance retention rate of SiC nano-hole array electrode is about 97.3% after 11000 circulations,
Illustrate that SiC nano-hole array electrode has excellent low-temperature stability.
Application Example 3
SiC nanohole array obtained in embodiment 1 is integrated into electrode, is sandwiched on electrode holder in three electrodes
Under system, using Ag/AgCl electrode as reference electrode, platinum plate electrode is to electrode, and 2M KCl solution is electrolyte, in 60 DEG C of high temperature
Under the conditions of test its chemical property.Fig. 7 is the cyclic voltammogram that SiC nano-array electrode measures under 60 DEG C of hot conditions,
Thus test result calculations go out in 100mVs-1Sweep under speed, the specific capacitance of SiC nano-array electrode is 12.96mF cm-2, knot
Fruit shows that the specific capacitance of SiC nano-array electrode under the conditions of 60 DEG C improves 17% compared under room temperature.Fig. 8 is SiC nanometers
The cyclical stability figure that array electrode is measured under 60 DEG C of hot conditions with cyclic voltammetry.SiC receives after 11000 circulations
The specific capacitance retention rate of rice array electrode is 96.8%, illustrates that SiC nano-array electrode has excellent high-temperature stability.
Application Example 4
SiC nanohole array obtained in embodiment 1 is integrated into electrode, is sandwiched on electrode holder in three electrodes
Under system, using Ag/AgCl electrode as reference electrode, platinum plate electrode is to electrode, and 2M KCl solution is electrolyte, at 60 DEG C and-
It is carried out under 10 DEG C of temperature match curing conditions alternately changed, the ambient temperature that simulation electrode changes in use.The embodiment
The stability of main test sample under temperature match curing conditions.SiC nano-hole array electrode is in 60 DEG C and -10 DEG C of two kinds of checkers
Under temperature match curing conditions, the capacitor retention rate of SiC nano-hole array electrode is 95.5% after 11000 cycle charge-discharges, such as Fig. 9 institute
Show.Show that SiC nano-pore array structure being capable of stable operation under the conditions of temperature complicated and changeable.
In conclusion in the present invention SiC nano-hole array electrode material have will have bigger serface, preferable electric conductivity
And chemical stability and thermal stability, the cyclical stability all with higher under the conditions of wider temperature, therefore, by SiC
Electrode is made for that can improve it in width while guaranteeing supercapacitor high specific capacitance in supercapacitor in nanohole array
Circulating temperature under the conditions of temperature.Meanwhile the use of SiC nanohole array is integrated into electrode, i.e. collector and active object
Integrated design makes active material and collector matched coefficients of thermal expansion, not easily to fall off, further increases the performance of electrode and makes
With the service life, and then improve the service life of supercapacitor.
This place embodiment is not exhaustive claimed midpoint of technical range and in embodiment technology
In scheme to single or multiple technical characteristics it is same replacement be formed by new technical solution, equally all the present invention claims
In the range of protection, and between the parameter that is related to of the present invention program if not otherwise specified, then there is no can not between each other
The unique combinations of replacement.
Specific embodiment described herein is only an example for the spirit of the invention.The neck of technology belonging to the present invention
The technical staff in domain can do various modifications or supplement or is substituted in a similar manner to described specific embodiment, but simultaneously
Spirit or beyond the scope defined by the appended claims of the invention is not deviated by.
It is skilled to this field although present invention has been described in detail and some specific embodiments have been cited
For technical staff, as long as it is obvious for can making various changes or correct without departing from the spirit and scope of the present invention.
Claims (10)
- Application of the 1.SiC nanohole array in supercapacitor, which is characterized in that the electrode of supercapacitor is by SiC nanometers Hole array is integrated into.
- 2. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that described Coordinating for SiC nanohole array is divided into 4H-SiC.
- 3. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that described The nano-pore of SiC nanohole array is vertical cellular structure.
- 4. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that bore dia For 5-40nm, a length of 8-20 μm of hole.
- 5. application of the SiC nanohole array according to claim 1 or 2 or 3 or 4 in supercapacitor, feature exist In the SiC nanohole array is made by the following method: SiC wafer is cut into the size of needs, respectively alcohol, go from It is cleaned by ultrasonic in sub- water, then impregnates in the ethanol solution containing HF acid, then dry, then the SiC after cleaning-drying is brilliant The acidproof protective glue of PVC is sticked at the piece back side, finally makees anode with SiC wafer, and carbon plate makees cathode, in etching liquid, uses the pulse power Anodic oxidation etches 6-10 minutes and obtains SiC nanohole array.
- 6. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that sweep speed from 10mVs-1To 500mVs-1, the specific capacitance of SiC nano-hole array electrode is from 16mF cm-2It is down to 8mF cm-2。
- 7. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that SiC nanometers For hole array electrode at room temperature after charge and discharge 10000 times, capacitor retention rate is not less than 96%.
- 8. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that SiC nanometers For hole array electrode under the conditions of -10 DEG C after charge and discharge 11000 times, capacitor retention rate is not less than 97.3%.
- 9. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that SiC nanometers For hole array electrode under the conditions of 60 DEG C after charge and discharge 11000 times, capacitor retention rate is 96.8%.
- 10. application of the SiC nanohole array according to claim 1 in supercapacitor, which is characterized in that SiC receives Under the temperature match curing conditions that electrode made of metre hole array alternately changes at -10 DEG C and 60 DEG C after charge and discharge 11000 times, capacitor retention rate Not less than 95.5%.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817474A (en) * | 2019-01-30 | 2019-05-28 | 宁波工程学院 | A kind of preparation method of chip level full solid state SiC supercapacitor |
| CN109904004A (en) * | 2019-01-30 | 2019-06-18 | 宁波工程学院 | A kind of preparation method of SiC nano-array film and its application in electrode of super capacitor |
| CN110534348A (en) * | 2019-07-31 | 2019-12-03 | 气相科技(武汉)有限公司 | A kind of electrode material and preparation method thereof based on 3C-SiC film |
| CN114464462A (en) * | 2022-02-23 | 2022-05-10 | 山东大学 | High-temperature high-power supercapacitor based on porous wide-bandgap semiconductor material and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833758A (en) * | 2017-10-19 | 2018-03-23 | 山西大学 | A kind of preparation method, product and the application of Ni-based integrated electrode |
-
2018
- 2018-07-03 CN CN201810720469.0A patent/CN109103025A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833758A (en) * | 2017-10-19 | 2018-03-23 | 山西大学 | A kind of preparation method, product and the application of Ni-based integrated electrode |
Non-Patent Citations (2)
| Title |
|---|
| LIANFU ZHAO，ET AL.: ""Large-scale fabrication of free-standing and transparent SiC nanohole array with tailored structures"", 《CERAMICS INTERNATIONAL》 * |
| 谈嘉慧: ""4H-SiC纳米结构调制及应用研究"", 《中国优秀硕士学位论文全文数据库 (工程科技Ⅰ辑)》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817474A (en) * | 2019-01-30 | 2019-05-28 | 宁波工程学院 | A kind of preparation method of chip level full solid state SiC supercapacitor |
| CN109904004A (en) * | 2019-01-30 | 2019-06-18 | 宁波工程学院 | A kind of preparation method of SiC nano-array film and its application in electrode of super capacitor |
| CN109817474B (en) * | 2019-01-30 | 2020-03-17 | 宁波工程学院 | Preparation method of chip-level all-solid-state SiC super capacitor |
| CN109904004B (en) * | 2019-01-30 | 2020-10-09 | 宁波工程学院 | Preparation method of SiC nanowire array film and application of SiC nanowire array film in supercapacitor electrode |
| CN110534348A (en) * | 2019-07-31 | 2019-12-03 | 气相科技(武汉)有限公司 | A kind of electrode material and preparation method thereof based on 3C-SiC film |
| CN114464462A (en) * | 2022-02-23 | 2022-05-10 | 山东大学 | High-temperature high-power supercapacitor based on porous wide-bandgap semiconductor material and preparation method thereof |
| CN114464462B (en) * | 2022-02-23 | 2023-08-11 | 山东大学 | High-temperature high-power supercapacitor based on porous wide-bandgap semiconductor material and preparation method thereof |
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