CN109100308A - A kind of porous silicon biosensor and its design method based on Bloch surface wave - Google Patents
A kind of porous silicon biosensor and its design method based on Bloch surface wave Download PDFInfo
- Publication number
- CN109100308A CN109100308A CN201810966501.3A CN201810966501A CN109100308A CN 109100308 A CN109100308 A CN 109100308A CN 201810966501 A CN201810966501 A CN 201810966501A CN 109100308 A CN109100308 A CN 109100308A
- Authority
- CN
- China
- Prior art keywords
- porous silicon
- layer
- surface wave
- bloch surface
- bragg mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/218—Measuring properties of electrooptical or magnetooptical media
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The present invention provides porous silicon biosensor and its design method based on Bloch surface wave, including to lower and upper sequentially connected silicon substrate layer, Bragg mirror layer, buffer layer and circular hole photon crystal grating layer；The Bragg mirror layer includes the alternately arranged high porosity porous silicon layer of N number of loop cycle and low porosity porous silicon layer；The circular hole photon crystal grating layer is equipped with the airport periodic array of lattice arrangement；The airport periodic array is with lattice constant a arrangement.The present invention utilizes rigorous couple-wave analysis method, a kind of simple full porous silicon multi-layer dielectric optical grating construction is designed in silicon substrate layer for the first time, so that the sensitivity of porous silicon biosensor increases substantially, the present invention has many advantages, such as that detection sensitivity is high, structure is simple and detection is accurate.
Description
Technical field
The invention belongs to biosensor technology fields, are related to a kind of porous silicon-base multi-layer dielectric biosensor, special
It is not a kind of porous silicon biosensor and its design method based on Bloch surface wave.
Background technique
Optical biosensor provides highly sensitive, the quickly unmarked inspection of the related chemical species of reading and low cost
Survey, for medical diagnosis, food safety and Homeland Security using most important.In order to detect specific unmarked bioanalysis
Object and small molecule, plasma and photon sensing platform have become strong tool.In these platforms, the fixation of analyte
The measurable variation of the optical property of structure is generated, this is often as rolling at the sensor surface detected in fadout collapsing field
Penetrate the variation of rate.Because traditional optical platform utilizes planar solid, the sum of the available surface binding site of analyte
Be limited, and at whole surface between optical field and analyte there is only small interaction, cause sensitivity to have
Limit.In addition, the sensor based on planar solid material is examined in which cannot selectively filter unwanted material or size selectivity
Survey target molecule.Porous sensing arrangement solves many above-mentioned challenges, and is incorporated into optical sensing platform more and more
In.Porous silicon PSi is a kind of particularly attractive unmarked bioanalytical sensing platform, because it has height-adjustable optics special
Property, the surface area of enhancing and quick and economic manufacture.The high surface area as caused by the presence of nanoscale hole allows to improve
To the sensibility of bio-molecular interaction, and adjustable pore space size~2nm to > 100nm allows for size selectivity
Detect and filter biggish pollutant kind.Biomolecule and porous silicon combination can cause effective folding of different structure porous silicon
The variation for penetrating rate, by the movement of the variation such as single layered porous silicon interference peaks of observation reflectance spectrum, in Bragg mirror forbidden band
The movement of heart position, the movement of the defect state position of microcavity, can detect biochemical molecule.
For example, Chinese patent CN102313717A discloses a kind of porous silicon micro-cavity biosensor comprising upper Bragg
Reflecting mirror, lower Bragg reflecting mirror and the defect layer being clipped between the upper Bragg reflecting mirror and lower Bragg reflecting mirror, it is described
Defect layer is with a thickness of 2 times of the high porosity rate thickness degree.After the detected biomolecule of addition enters in defect layer, resonance
Summit occur it is corresponding mobile, so as to according to amount of movement number judge biomolecule concentration value be added.
Can the critical limitation that these above-mentioned PSi sensors face be effectively detected readily permeable porous matrix
Small molecule and the macromolecular for being slowly diffused into hole or being filtered out by hole.It is based on Bloch surface wave Bloch in recent years
The research of the Photobiology sensor of surface wave, BSW also gradually attracts attention, with surface plasma excimer (SPP)
It compares, Bloch surface wave is similar to the Some features of surface plasma wave, and surface plasma wave is in electromagnetic wave and gold
In the case where interacting between metal surface free electron, inspires plasma and form a kind of special mode of electromagnetic wave.
Both by changing the spatial distribution of electromagnetic field, thus enhance electromagnetic field local at surface, and Bloch surface wave has
There is better characteristics.Especially in sensory field, compared with surface plasmon sensor, Bloch surface wave sensor has
Many advantages: surface plasma wave can only be excited by TM polarised light, and Bloch surface wave is under TE and TM polarised light
Excitation；Surface plasma wave wavelength is determined by the characteristic of metal layer, therefore cannot be changed, and Bloch surface wave wavelength can be with
The surface wave of any wavelength is formed by changing the structural parameters (such as thickness and refractive index of period layer) of period layer medium；
Without considering the absorption loss of metal when Bloch surface wave is excited, so that the surface wave occurred after resonance is more sharp,
So as to obtain higher sensitivity and spectral resolution.
Summary of the invention
The purpose of the present invention is provide a kind of porous silicon biosensor based on Bloch surface wave regarding to the issue above
And its design method, the present invention improve the sensitivity of porous silicon biosensor using the BSW that multi-layer dielectric structure excites.
Since the porous silicon of Conventional electrochemical caustic solution preparation has small-bore and the complexity pattern of apertures of high refractive index dielectric layer, it is
It solves analyte and is difficult to the inhomogeneities permeated and be distributed, the method for the present invention is based on Bloch surface wave BSW principle and designs one
Kind multi-layer dielectric optical grating construction, establishes model by rigorous couple-wave analysis method and is calculated, then carry out parameter optimization, selects
It selects suitable structural parameters and obtains the reflectance spectrum figure of relatively narrow resonance peak.
The technical scheme is that a kind of porous silicon biosensor based on Bloch surface wave, including to lower and
Upper sequentially connected silicon substrate layer 1, Bragg mirror layer 2, buffer layer 3 and circular hole photon crystal grating layer 4；
The Bragg mirror layer 2 includes the alternately arranged high porosity porous silicon layer 201 of N number of loop cycle and low hole
Gap rate porous silicon layer 202；
The circular hole photon crystal grating layer 4 is equipped with multiple airports 401, and the airport 401 is with lattice constant a
Arrangement.
Preferably, the N=5.
In above scheme, triangle or square arrangement that the airport 401 is 1000 ± 100nm with lattice constant a.
Preferably, the lattice constant a is 1000nm.
Preferably, porosity ρ=80% of the high porosity porous silicon layer 201, the low porosity porous silicon layer 202
Porosity ρ=50%.
Preferably, the thickness of the high porosity porous silicon layer 201 and low porosity porous silicon layer 202 passes through following formula
It calculates:
Wherein, lambda1-wavelength λ0=1.55 μm；
The 201 refractive index n of high porosity porous silicon layerL=1.32,201 thickness d of high porosity porous silicon layerL=
294nm；The 202 refractive index n of low porosity porous silicon layerH=2.15,202 thickness d of low porosity porous silicon layerH=180nm.
In above scheme, for the air bore dia D value from for 200nm~600nm, step-length is set as 100nm；The hole
For deep h value from 400nm~800nm, step-length is set as 100nm.
Preferably, the air bore dia D=300nm；The airport hole depth h=600nm.
A kind of highly sensitive porous silicon biosensor based on Bloch surface wave, comprising the following steps:
Step S1. establishes the porous silicon biology based on Bloch surface wave using software by rigorous couple-wave analysis method
The structure of the structural model of sensor, the highly sensitive porous silicon biosensor based on Bloch surface wave includes under
And upper sequentially connected silicon substrate layer 1, Bragg mirror layer 2, buffer layer 3 and circular hole photon crystal grating layer 4, it is described
Bragg mirror layer 2 includes the alternately arranged high porosity porous silicon layer 201 of N number of loop cycle and low porosity porous silicon layer
202, the circular hole photon crystal grating layer 4 is equipped with multiple airports 401, and the airport 401 is with lattice constant a row
Column；
Step S2. is based on rigorous couple-wave analysis method and calculates incident wavelength near infrared band λ0Light in Porous Silicon structures
The evolution of the inside is carried out excellent by the structural parameters to 2 periodicity N of Bragg mirror layer and circular hole photon crystal grating layer 4
Change, to obtain the optimal parameter combination of the porous dielectric reflectivity of excitation Bloch surface wave BSW, the structural parameters include
Lattice constant a, air bore dia D and airport hole depth h；
Step S3. analysis has the highly sensitive porous silicon biology based on Bloch surface wave of different refractivity analyte
The spectral sensitivity of sensor.
Preferably, the combination of the optimal parameter are as follows: the 2 periodicity N=5 of Bragg mirror layer, lattice constant a=
1000nm, air bore dia D=300nm, airport hole depth h=600nm.
Compared with prior art, the beneficial effects of the present invention are:
1. the present invention is based on Bloch surface wave BSW principles to design a kind of multi-layer dielectric optical grating construction, pass through stringent coupling
Multiplex analytic approach is established model and is calculated, and parameter optimization is then carried out, and suitable structural parameters is selected to obtain relatively narrow resonance peak
Reflectance spectrum figure, it is anti-to be followed successively by silicon substrate layer, Bragg the multi-layer dielectric optical grating construction that the present invention designs from bottom to top
Mirror layer, buffer layer and circular hole photon crystal grating layer are penetrated, solves the porous silicon prepared by Conventional electrochemical caustic solution
The small-bore and complicated pattern of apertures, caused analyte for having high refractive index dielectric layer are difficult to permeate and ask with unevenly distributed
Topic.
2. the present invention is by utilizing Diffract module in Rsoft software on the basis of rigorous couple-wave analysis method
Building one has the Porous Silicon structures model of multi-layer dielectric grating, carries out parameter optimization, then to obtain excitation Bloch
The optimal parameter of the porous dielectric reflectivity of surface wave BSW combines, using periodic boundary condition PBC and perfect domination set
PML analyzes minimum period cellular construction.
3. invention utilizes rigorous couple-wave analysis method, designed in silicon substrate layer for the first time a kind of simple complete more
Hole silicon multi-layer dielectric optical grating construction, so that the sensitivity of porous silicon biosensor increases substantially, optimal parameter combination are as follows:
Bragg mirror period number N=5, tetragonal constant a=1000nm, air bore dia D=300nm, hole depth h=600nm,
When test analyte refractive index is 1.470~1.495, sensitivity is lacked up to 159.5 °/RIU compared to 1-D photon crystal surface
It falls into state structural porous silicon biosensor and improves 1.5 times.Optical biosensor based on BSW may be implemented to polarize using TM
It is wider with detection of the electromagnetic wave to physical property to be measured, use scope under TE polarization conditions.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of porous silicon biosensor.
Fig. 2 is the cross-sectional view of porous silicon biosensor.
Fig. 3 is the top view of porous silicon biosensor structure.
Fig. 4 is influence of the different Bragg mirror period numbers to reflectance spectrum within the scope of near infrared band.
Fig. 5 is influence of the airport diameter change to reflectance spectrum within the scope of near infrared band.
Fig. 6 is influence of the airport change in depth to reflectance spectrum within the scope of near infrared band.
Fig. 7 is within the scope of near infrared band, and when determinand is liquid, in the case where changing liquid refractivity, TE is polarized
Electromagnetic wave, with incident angle variation excite BSW the case where.
Fig. 8 is the line between resonance angle and analyte refractive index after simulation porous silicon biosensor penetrates into analyte
Property regression relation figure；Wherein black semicircle indicates the simulation numerical obtained using RCWA, and solid black lines indicate corresponding fitting knot
Fruit.
Wherein: 1- silicon substrate layer, 2-Bragg mirror layer, 201- high porosity porous silicon layer, 202- low porosity are porous
Silicon layer, 3- buffer layer, 4- circular hole photon crystal grating layer, 401- airport.
Specific embodiment
Invention is further described in detail with reference to the accompanying drawings and detailed description, but protection scope of the present invention
It is not limited to this.
The present invention provides a kind of porous silicon biosensor based on Bloch surface wave, the porous silicon biosensors
The electromagnetic wave that circular hole photon crystal grating excites BSW frequency is coupled by multilayer Bragg reflecting mirror, using this optical sensing
The detection to physical property to be measured may be implemented in device.
As depicted in figs. 1 and 2, a kind of porous silicon biosensor based on Bloch surface wave is suitable for test substance
The detection of performance, until lower and upper sequentially connected silicon substrate layer 1, Bragg mirror layer 2, buffer layer 3 and circular hole photonic crystal
Grating layer 4；The Bragg mirror layer 2 includes the alternately arranged high porosity porous silicon layer 201 of N number of loop cycle and low hole
Gap rate porous silicon layer 202；The circular hole photon crystal grating layer 4 be equipped with multiple airports 401, the airport 401 with
Lattice constant a arrangement.
The Bragg mirror layer 2 includes the alternately arranged high porosity porous silicon layer 201 of N number of loop cycle and low hole
Gap rate porous silicon layer 202.
Preferably, high porosity porous silicon layer ρ=80%, low porosity porous silicon layer ρ=50%, first set into
Penetrate wavelength X0=1.55 μm, nL=1.32, nH=2.15 then according to equation: nHdH=nLdL=λ 0/4 determines the high porosity
The thickness d of porous silicon layer 201 and low porosity porous silicon layer 202.Wherein, n represents porous silicon layer refractive index, and d represents porous silicon
Thickness degree, subscript H indicate that high refractive index porous silicon layer, subscript L indicate low-refraction porous silicon layer, λ0Lambda1-wavelength is represented,
It can be in quarter-wave strong point excitation photon local by above-mentioned formula.
Preferably, the 201 refractive index n of high porosity porous silicon layerL=1.32, porous silicon layer thickness dL=294nm；Institute
State 202 refractive index n of low porosity porous silicon layerH=2.15, porous silicon layer thickness dH=180nm.
Preferably, the air bore dia D value changes to 600nm from 200nm, and step-length is set as 100nm；The hole depth
H value changes to 800nm from 400nm, and step-length is likewise provided as 100nm.
The lattice constant a is 1000 ± 100nm, and the preferred lattice constant a is 1000nm.
The Bragg mirror layer 2, buffer layer 3 and circular hole photon crystal grating layer 4 are semiconductor material.It is described
Bragg mirror layer 2, buffer layer 3, circular hole photon crystal grating layer 4 are to be corroded in silicon wafer using electrochemical method
Porous silica material, porous silicon layer refractive index and thickness are controlled by size of current and etching time length.
Preferably, the buffer layer 3 and 4 porous silicon refractive index of circular hole photon crystal grating layer are 1.65.
A kind of porous silicon biosensor based on Bloch surface wave, comprising the following steps:
Step S1. utilizes Diffract module building one in Rsoft software on the basis of rigorous couple-wave analysis method
A porous silicon biosensor structure model based on Bloch surface wave with multi-layer dielectric grating, it is described to be based on cloth Lip river
The structure of the highly sensitive porous silicon biosensor of conspicuous surface wave includes to lower and upper sequentially connected silicon substrate layer 1, Bragg
Mirror layer 2, buffer layer 3 and circular hole photon crystal grating layer 4, the Bragg mirror layer 2 are handed over including N number of loop cycle
For the high porosity porous silicon layer 201 and low porosity porous silicon layer 202 of arrangement, on the circular hole photon crystal grating layer 4
Equipped with multiple airports 401, the airport 401 is with lattice constant a arrangement；
Step S2. is based on rigorous couple-wave analysis method and calculates incident wavelength near infrared band λ0=1.55 μm of light is more
Evolution inside the silicon structure of hole is joined by the structure to 2 periodicity N of Bragg mirror layer and circular hole photon crystal grating layer 4
Number optimizes, to obtain the optimal parameter combination of the porous dielectric reflectivity of excitation Bloch surface wave BSW, the structure
Parameter includes lattice constant a, air bore dia D and airport hole depth h etc.；
Step S3. is based on angular interrogation method, systematically analyzes with different refractivity analyte based on Bloch
The spectral sensitivity of the porous silicon biosensor of surface wave and the response characteristic of sensor, when test analyte refractive index exists
1.470 change to 1.495, and reflectance spectrum generates red shift, as shown in Figure 7.
Simulation shows in the porous silicon biosensor based on Bloch surface wave, Bragg mirror period number N=5,
Multi-layer dielectric grating can be improved in tetragonal constant a=1000nm, air bore dia D=300nm, hole depth h=600nm
The sensitivity of biosensor, 159 °/RIU of value >.
Embodiment one
As shown in Figure 1, a kind of porous silicon biosensor based on Bloch surface wave, including to it is lower and on be sequentially connected
Silicon substrate layer 1, Bragg mirror layer 2, buffer layer 3 and circular hole photon crystal grating layer 4.
As shown in Fig. 2, the Bragg mirror layer 2 includes the alternately arranged high porosity porous silicon layer of N number of loop cycle
201 and low porosity porous silicon layer 202；
As shown in figure 3, the circular hole photon crystal grating layer 4 is equipped with 401 period of airport of tetragonal arrangement
Array；The airport periodic array is with the arrangement of lattice constant a pros.
The air bore dia D value changes to 600nm from 200nm, and step-length is set as 100nm；The hole depth h value from
400nm changes to 800nm, and step-length is likewise provided as 100nm.
The tetragonal constant a is 1000 ± 100nm.
It is slow to refer to that circular hole photonic crystal by diffraction is coupled to laterally electricity TE or the transverse magnetic TM polarized light source of grating layer 4
It rushes in layer 3, grating equation expression formula are as follows:
Wherein, neffIt is the effective refractive index of a WG mode, ncIt is the refractive index of coating, θ is measured from vertical incidence
Coupling angle, m is the order of diffraction, λ0It is free space wavelength, ∧ is grating space, i.e., above-mentioned lattice constant a.Under coupling angle,
High order diffraction light intensity is coupled to high-index core layer i.e. buffer layer 3, generates strong resonance characteristics in the reflection of far field.Work as liquid
When body, gas or molecule are introduced into structure, PSi layers of refraction index changing, to generate the detectable offset of coupling angle θ.With
Analyte only surface interaction being compared without hole sensor, inventive sensor have multi-layer dielectric optical grating construction its
Detection sensitivity is more order of magnitude greater than planar silicon-on-insulator SOI grating coupling WG.
Pass through following steps: the Porous Silicon structures model of multi-layer dielectric grating is established i.e. based on rigorous couple-wave analysis method
The structural model of porous silicon biosensor based on Bloch surface wave；Design the periodicity of Bragg mirror layer 2, circular hole
4 airport of type photon crystal grating layer, 401 diameter and hole depth carry out primary Calculation: optimizing processing with RCWA algorithm, obtain
Optimal result parameter；In vertical incidence light λ0In the case of=1.55 μm, multi-layer dielectric grating can regard sub-wave length grating knot as
Structure, due to screen periods, that is, lattice constant, the characteristics of being much smaller than incident wavelength, only exist Zero-order diffractive wave.
It, can be by theoretical analysis and numerical method, for using not when carrying out the design of porous silicon biosensor
Bragg mirror layer 2 with periodicity obtains optimal BSW stimulation effect, to realize optimal optical sensing detection.Such as Fig. 4
It is shown as the increase reflection efficiency of Bragg mirror periodicity increases accordingly, when periodicity N be greater than 5 when reflectivity improve width
Degree reduces, and periodicity is also not The more the better, is difficult to permeate by multi-layer dielectric and is limited, therefore we select
Bragg periodicity N is 5.
In order to which the effect of the structure is better described, the present invention is using the structural parameters after optimization, Bragg mirror period
Number N=5, tetragonal constant a=1000nm, air bore dia D=300nm, hole depth h=600nm, the structure optimized in this way are calculated
Transducer sensitivity out is 159.5 °/RIU, as shown in Figure 8.
Embodiment two
Shown in Fig. 1, a kind of porous silicon biosensor based on Bloch surface wave, including to lower and upper sequentially connected
Silicon substrate layer 1, Bragg mirror layer 2, buffer layer 3 and circular hole photon crystal grating layer 4.
As shown in Fig. 2, the Bragg mirror layer includes the alternately arranged high porosity porous silicon layer of N number of loop cycle
201 and low porosity porous silicon layer 202.
As shown in figure 3, the circular hole photon crystal grating layer 4 is equipped with 401 period of airport of tetragonal arrangement
Array；401 periodic array of airport is with the arrangement of lattice constant a pros.
The air bore dia D value changes to 600nm from 200nm, and step-length is set as 100nm；The hole depth h value from
400nm changes to 800nm, and step-length is likewise provided as 100nm.
The tetragonal constant a is 1000 ± 100nm.
Pass through following steps: establishing the Porous Silicon structures model of multi-layer dielectric grating based on rigorous couple-wave analysis method,
That is the structural model of the porous silicon biosensor based on Bloch surface wave；Design 2 periodicity of Bragg mirror layer, circular hole
4 airport of type photon crystal grating layer, 401 diameter and hole depth carry out primary Calculation: optimizing processing with RCWA algorithm, obtain
Optimal result parameter；In vertical incidence light λ0In the case of=1.55 μm, multi-layer dielectric grating can regard sub-wave length grating knot as
Structure, due to screen periods, that is, lattice constant, the characteristics of being much smaller than incident wavelength, only exist Zero-order diffractive wave.
To study the influence of different air bore dias to BSW effect, take D=200nm, 300nm, 400nm, 500nm and
600nm, from Fig. 5 it can be found that in reflectance spectrum BSW excite resonance peak acuity first increases and then decreases, at D=300nm
Obtain extreme value.
In order to which the effect of the structure is better described, the present invention is using the structural parameters after optimization, Bragg mirror period
Number N=5, tetragonal constant a=1000nm, air bore dia D=400nm, hole depth h=600nm, the structure optimized in this way are calculated
Transducer sensitivity out is 138.9 °/RIU.
Embodiment three
As shown in Figure 1, a kind of porous silicon biosensor based on Bloch surface wave, including to it is lower and on be sequentially connected
Silicon substrate layer 1, Bragg mirror layer 2, buffer layer and circular hole photon crystal grating layer 4.
As shown in Fig. 2, the Bragg mirror layer includes the alternately arranged high porosity porous silicon layer of N number of loop cycle
201 and low porosity porous silicon layer 202；
As shown in figure 3, the circular hole photon crystal grating layer 4 is equipped with 401 period of airport of tetragonal arrangement
Array；The airport periodic array is with the arrangement of lattice constant a pros.
The air bore dia D value changes to 600nm from 200nm, and step-length is set as 100nm；The hole depth h value from
400nm changes to 800nm, and step-length is likewise provided as 100nm.
The tetragonal constant a is 1000 ± 100nm.
Pass through following steps: the Porous Silicon structures model of multi-layer dielectric grating is established i.e. based on rigorous couple-wave analysis method
The structural model of porous silicon biosensor based on Bloch surface wave；Design the periodicity of Bragg mirror layer 2, circular hole
4 airport of type photon crystal grating layer, 401 diameter and hole depth carry out primary Calculation: optimizing processing with RCWA algorithm, obtain
Optimal result parameter；In vertical incidence light λ0In the case of=1.55 μm, multi-layer dielectric grating can regard sub-wave length grating knot as
Structure, due to screen periods, that is, lattice constant, the characteristics of being much smaller than incident wavelength, only exist Zero-order diffractive wave.
To study the influence of different air hole depths to BSW effect, take h=200nm, 300nm, 400nm, 500nm and
600nm.As shown in fig. 6, resonance peak-to-peak value first reduces to be increased afterwards when h changes within the scope of 400~600nm；As hole depth h=
When 600nm, reflectance spectrum generates most sharp formant.
In order to which the effect of the structure is better described, the present invention is using the structural parameters after optimization, Bragg mirror period
Number N=5, tetragonal constant a=1000nm, air bore dia D=300nm, hole depth h=500nm, the structure optimized in this way are calculated
Transducer sensitivity out is 153.3 °/RIU.
The series of detailed descriptions listed above are illustrated only for possible embodiments of the invention,
The protection scope that they are not intended to limit the invention, it is all without departing from equivalent embodiment made by technical spirit of the present invention or change
It should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of porous silicon biosensor based on Bloch surface wave, which is characterized in that including to it is lower and on be sequentially connected
Silicon substrate layer (1), Bragg mirror layer (2), buffer layer (3) and circular hole photon crystal grating layer (4)；
The Bragg mirror layer (2) includes the alternately arranged high porosity porous silicon layer (201) of N number of loop cycle and low hole
Gap rate porous silicon layer (202)；
The circular hole photon crystal grating layer (4) is equipped with multiple airports (401), and the airport (401) is normal with lattice
Number a arrangement.
2. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the N
=5.
3. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the sky
The triangle or square arrangement that stomata (401) is 1000 ± 100nm with lattice constant a.
4. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the crystalline substance
Lattice constant a is 1000nm.
5. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the height
Porosity ρ=80% of porosity porous silicon layer (201), porosity ρ=50% of the low porosity porous silicon layer (202).
6. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the height
The thickness of porosity porous silicon layer (201) and low porosity porous silicon layer (202) is calculated by the following formula:
Wherein, lambda1-wavelength λ0=1.55 μm；
High porosity porous silicon layer (201) the refractive index nL=1.32, high porosity porous silicon layer (201) thickness dL=
294nm；Low porosity porous silicon layer (202) the refractive index nH=2.15, low porosity porous silicon layer (202) thickness dH=
180nm。
7. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the sky
For hole diameter D value from for 200nm~600nm, step-length is set as 100nm；The hole depth h value is walked from 400nm~800nm
Length is set as 100nm.
8. the porous silicon biosensor according to claim 1 based on Bloch surface wave, which is characterized in that the sky
Hole diameter D=300nm；The airport hole depth h=600nm.
9. based on the porous silicon biosensor of Bloch surface wave, feature described in a kind of claim 1-8 any one
It is, comprising the following steps:
Step S1. establishes the porous silicon bio-sensing based on Bloch surface wave using software by rigorous couple-wave analysis method
The structural model of device, the structure of the highly sensitive porous silicon biosensor based on Bloch surface wave include to it is lower and on
Sequentially connected silicon substrate layer (1), Bragg mirror layer (2), buffer layer (3) and circular hole photon crystal grating layer (4), institute
Stating Bragg mirror layer (2) includes that the alternately arranged high porosity porous silicon layer (201) of N number of loop cycle and low porosity are more
Hole silicon layer (202), the circular hole photon crystal grating layer (4) are equipped with multiple airports (401), the airport (401)
With lattice constant a arrangement；
Step S2. is based on rigorous couple-wave analysis method and calculates incident wavelength near infrared band λ0Light inside Porous Silicon structures
Evolution, carried out by structural parameters to Bragg mirror layer (2) periodicity N and circular hole photon crystal grating layer (4) excellent
Change, to obtain the optimal parameter combination of the porous dielectric reflectivity of excitation Bloch surface wave BSW, the structural parameters include
Lattice constant a, air bore dia D and airport hole depth h；
Step S3. analysis has the spectrum of the porous silicon biosensor based on Bloch surface wave of different refractivity analyte
Sensitivity.
10. the highly sensitive porous silicon biosensor according to claim 9 based on Bloch surface wave, feature exist
In the combination of the optimal parameter are as follows: Bragg mirror layer (2) the periodicity N=5, lattice constant a=1000nm, air
Bore dia D=300nm, airport hole depth h=600nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810966501.3A CN109100308B (en) | 2018-08-23 | 2018-08-23 | Porous silicon biosensor based on Bloch surface wave and design method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810966501.3A CN109100308B (en) | 2018-08-23 | 2018-08-23 | Porous silicon biosensor based on Bloch surface wave and design method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109100308A true CN109100308A (en) | 2018-12-28 |
| CN109100308B CN109100308B (en) | 2020-07-31 |
Family
ID=64850968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810966501.3A Active CN109100308B (en) | 2018-08-23 | 2018-08-23 | Porous silicon biosensor based on Bloch surface wave and design method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109100308B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110763653A (en) * | 2019-09-16 | 2020-02-07 | 深圳大学 | Terahertz gas sensor based on polymer Bloch surface wave |
| CN111458792A (en) * | 2020-04-16 | 2020-07-28 | 中国科学院上海微系统与信息技术研究所 | Bloch surface wave one-way coupling chip based on asymmetric double-slit structure |
| CN111795948A (en) * | 2020-07-03 | 2020-10-20 | 西湖大学 | Optical biosensor and COVID-19 virus detection device |
| CN111896498A (en) * | 2020-08-05 | 2020-11-06 | 新疆大学 | Porous silicon assembled micro-cavity biosensor |
| CN112461787A (en) * | 2020-10-30 | 2021-03-09 | 江苏大学 | Lithium niobate optical sensor based on Bloch surface wave and method |
| CN113237849A (en) * | 2021-05-11 | 2021-08-10 | 江苏大学 | Lithium niobate two-dimensional grating excited Bloch surface wave biosensor and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231034A (en) * | 2006-12-30 | 2011-11-02 | 中国科学院上海微系统与信息技术研究所 | Light beam adjuster using adjustable photonic crystal auto-collimation effect and application thereof |
| CN102313717A (en) * | 2011-08-02 | 2012-01-11 | 上海交通大学 | Porous silicon micro-cavity biosensor and its preparation method |
| CN104914072A (en) * | 2015-05-08 | 2015-09-16 | 新疆大学 | Detection method of porous silicon photonic crystal biochip |
| CN106226268A (en) * | 2016-07-06 | 2016-12-14 | 燕山大学 | A kind of porous silicon silicon porous silicon gas sensor based on evanescent wave resonance |
| CN106773101A (en) * | 2017-03-23 | 2017-05-31 | 中国科学技术大学 | It is a kind of to excite BSW to realize the optical chip of Beams coupling based on grating |
| CN107064078A (en) * | 2017-04-13 | 2017-08-18 | 山东大学 | Optical sensor and optical detecting method based on BSW |
-
2018
- 2018-08-23 CN CN201810966501.3A patent/CN109100308B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231034A (en) * | 2006-12-30 | 2011-11-02 | 中国科学院上海微系统与信息技术研究所 | Light beam adjuster using adjustable photonic crystal auto-collimation effect and application thereof |
| CN102313717A (en) * | 2011-08-02 | 2012-01-11 | 上海交通大学 | Porous silicon micro-cavity biosensor and its preparation method |
| CN104914072A (en) * | 2015-05-08 | 2015-09-16 | 新疆大学 | Detection method of porous silicon photonic crystal biochip |
| CN106226268A (en) * | 2016-07-06 | 2016-12-14 | 燕山大学 | A kind of porous silicon silicon porous silicon gas sensor based on evanescent wave resonance |
| CN106773101A (en) * | 2017-03-23 | 2017-05-31 | 中国科学技术大学 | It is a kind of to excite BSW to realize the optical chip of Beams coupling based on grating |
| CN107064078A (en) * | 2017-04-13 | 2017-08-18 | 山东大学 | Optical sensor and optical detecting method based on BSW |
Non-Patent Citations (3)
| Title |
|---|
| C. JAMOIS 等: "Slow Bloch surface wave devices on porous silicon for sensing applications", 《PHOTONICS AND NANOSTRUCTURES – FUNDAMENTALS AND APPLICATIONS》 * |
| GILBERTOA.RODRIGUEZ: "A sizeselectiveporoussilicongrating-coupledBlochsurface and sub-surfacewavebiosensor", 《BIOSENSORS ANDBIOELECTRONICS》 * |
| 陈颖: "基于布洛赫理论的光子晶体表面波形成及传感机理", 《中国激光》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110763653A (en) * | 2019-09-16 | 2020-02-07 | 深圳大学 | Terahertz gas sensor based on polymer Bloch surface wave |
| CN110763653B (en) * | 2019-09-16 | 2023-12-29 | 深圳大学 | Terahertz gas sensor based on polymer Bluoch surface wave |
| CN111458792A (en) * | 2020-04-16 | 2020-07-28 | 中国科学院上海微系统与信息技术研究所 | Bloch surface wave one-way coupling chip based on asymmetric double-slit structure |
| CN111795948A (en) * | 2020-07-03 | 2020-10-20 | 西湖大学 | Optical biosensor and COVID-19 virus detection device |
| WO2022001021A1 (en) * | 2020-07-03 | 2022-01-06 | 西湖大学 | Optical biosensor and covid-19 virus detection device |
| CN111795948B (en) * | 2020-07-03 | 2022-04-19 | 西湖大学 | Optical biosensor and COVID-19 virus detection device |
| CN111896498A (en) * | 2020-08-05 | 2020-11-06 | 新疆大学 | Porous silicon assembled micro-cavity biosensor |
| CN111896498B (en) * | 2020-08-05 | 2023-07-04 | 新疆大学 | Application method of porous silicon assembled microcavity biosensor |
| CN112461787A (en) * | 2020-10-30 | 2021-03-09 | 江苏大学 | Lithium niobate optical sensor based on Bloch surface wave and method |
| CN113237849A (en) * | 2021-05-11 | 2021-08-10 | 江苏大学 | Lithium niobate two-dimensional grating excited Bloch surface wave biosensor and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109100308B (en) | 2020-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109100308A (en) | A kind of porous silicon biosensor and its design method based on Bloch surface wave | |
| ES2554258T3 (en) | SPR sensor device with nanostructure | |
| Rodriguez et al. | A size selective porous silicon grating-coupled Bloch surface and sub-surface wave biosensor | |
| Kong et al. | High-sensitivity sensing based on intensity-interrogated Bloch surface wave sensors | |
| US20190369092A1 (en) | Method for the topographically-selective passivation of micro- and nanoscale devices | |
| US8711356B2 (en) | Gas sensor with a porous layer that detectably affects a surface lattice resonant condition of a nanoparticle array | |
| Schnippering et al. | Evanescent wave cavity-based spectroscopic techniques as probes of interfacial processes | |
| EP0922214A1 (en) | Optical chemical / biochemical sensor | |
| CN102262051A (en) | Optical sensing devices and methods for detecting samples using the same | |
| CN107064078A (en) | Optical sensor and optical detecting method based on BSW | |
| Shen et al. | Shape effect on a single-nanoparticle-based plasmonic nanosensor | |
| Said et al. | Copper-graphene SPR-based biosensor for urea detection | |
| CN103424393A (en) | Surface enhanced Raman based organic phosphorus detection method | |
| Smith et al. | SPCE-based sensors: Ultrafast oxygen sensing using surface plasmon-coupled emission from ruthenium probes | |
| Kitahama et al. | Measurement of pH-dependent surface-enhanced hyper-Raman scattering at desired positions on yeast cells via optical trapping | |
| RU2694157C2 (en) | Sensor element for selective amplification of giant raman scattering of light | |
| kumar Agrawal et al. | Enhanced sensitivity of SPR sensing and imaging using plasmonic nanopillar arrays | |
| CN113237849B (en) | Lithium niobate two-dimensional grating excited Bloch surface wave biosensor and method | |
| Hajj-Hassan et al. | Porous silicon and porous polymer substrates for optical chemical sensors | |
| Yashunsky et al. | Infrared surface plasmon spectroscopy of living cells | |
| Gryczynski et al. | Surface-plasmon–coupled emission: new technology for studying molecular processes | |
| JP2008275526A (en) | Surface plasmon resonance measuring sensor chip, surface plasmon resonance measuring apparatus, and its measuring method | |
| CN102175705A (en) | Chemical sensing system with double-crescent pair structure | |
| RU2709411C1 (en) | Sensor element for additional selective amplification of signal of giant raman scattering of light | |
| Li et al. | Plasmonic BICs as Biosensors with Better Detectivity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230907 Address after: No. 168, Youyou Road, Xiangzhou District, Zhuhai City, Guangdong Province, 519000 Patentee after: Xin Yao Tu Technology (Zhuhai) Co.,Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: JIANGSU University |
|
| TR01 | Transfer of patent right |