CN109100018A - Larger Dynamic range weak light detection system based on avalanche photodiode array chip - Google Patents
Larger Dynamic range weak light detection system based on avalanche photodiode array chip Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 45
- 238000012545 processing Methods 0.000 claims abstract description 27
- 238000005259 measurement Methods 0.000 claims abstract description 11
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- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 7
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- 230000035945 sensitivity Effects 0.000 description 3
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
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Abstract
The Larger Dynamic range weak light detection system based on avalanche photodiode array chip that the present invention is to provide a kind of.It is characterized in that: it is read by bias generator module 1, bias control module 2, avalanche photodiode array chip 3, light source 4 and signal and processing module 5 forms.It invention can be widely used in atomic dim light measurement such as laser ranging, DNA sequencing, the distribution of quantum secret key, the fields such as laser radar and medical imaging.
Description
(1) technical field
The Larger Dynamic range weak light detection system based on avalanche photodiode array chip that the present invention relates to a kind of,
It can be used for atomic dim light measurement such as laser ranging, DNA sequencing, the distribution of quantum secret key, the application such as laser radar and medical imaging.
Belong to technical field of photoelectric detection.
(2) background technique
Avalanche photodide is a kind of semiconductor photodetector, when running, higher reversed plus one on it
After bias voltage, using its internal avalanche breakdown effects, biggish gain can be obtained in inside.When reverse bias voltage is lower than
When its breakdown voltage, avalanche photodide works in linear region, and internal gain is generally tens to 10 at this time3；When reversed
When bias voltage is higher than its breakdown voltage, avalanche photodide works in Geiger mode (also referred to as monochromatic light subpattern), interior at this time
Portion's gain may be up to 105~106.Due to there is biggish internal gain, the sensitivity of avalanche photodide is much higher than other half
Conductor photodiode is widely used in atomic dim light measurement such as laser ranging, DNA sequencing, the distribution of quantum secret key, laser thunder
It reaches and the fields such as medical imaging.
Dynamic range is an important parameter of photodetector, may be defined as maximum detection unsaturation optical signal and minimum
Can light signal ratio, it determines the power bracket for the optical signal that detector can detect.If photodetector is dynamic
State range is insufficient, can largely limit the accuracy and use scope of detection system.Such as in optical sensing/detection system
In, if the dynamic range of detector is insufficient, may result in sensing system cannot detect faint optical signal (useful signal falls into oblivion
Not among noise) either detector can easily reach saturation state (when institute's light signal or ambient light signal are stronger
When), cause it that cannot read useful signal, reduces the accuracy of total system；In optical time domain reflection (OTDR) system, institute
The fiber lengths and its blind area that OTDR system can be detected directly are determined with the dynamic range of photodetector.It can be seen that
In the detection process of optical signal, in order to correctly be converted and read the strong light of institute's light signal and dim light part,
The accuracy and measurement range for improving detection system need to be promoted the dynamic range and sensitivity of photodetector as far as possible.
In order to improve the dynamic range of the dim light detector based on avalanche photodide, Zhang Yixin etc. was in public affairs in 2014
The photon counting-type faint optical signal measuring device and method (Chinese publication of a kind of high dynamic range are opened
CN201410326414.3), they are under gating patterns, the detection result according to obtained in measurement process, to running on monochromatic light
The gate voltage of avalanche photodide under subpattern is adjusted, promoted the unsaturated detection efficient of maximum of detection system with
Realize the weak light detection of high dynamic range.In addition, ginger, which has first just been waited, disclosed automatic test avalanche photodide snow in 2009
Collapse the measurement circuit and method (Chinese publication CN200810046356.3) of voltage value；Gong Ping etc. disclosed one in 2015
The signal detection (Chinese publication CN201510440108.7) of kind raising optical time domain reflectometer dynamic range；Zhao Yi is waited by force
Disclose within 2018 self-regulation pulsed laser ranging system and method (Chinese publication CN201710729845.8)；To be promoted
The dynamic range of avalanche photodiode detector.Above several designs be all during photodetection, by feedback system,
Judge whether system reaches saturation state, then the reverse bias voltage of avalanche diode is adjusted again to reach suitable
Light intensity detection range.
Those described above system there are the problem of have:
1. avalanche photodide used in is operating only at a mode (linear model or single photon detection mode), makes
The dynamic of detection system can not be limited to effective photoelectric conversion is carried out from single photon magnitude to stronger optical signal by obtaining detection system
State range.
2. system speed of detection is by larger limitation.In detection process, the reverse bias electricity to avalanche diode is needed
Pressure is repeatedly adjusted, and since avalanche diode is generally offset to high voltage, while minimum bias ripple is required, therefore
Bias voltage output generally can additional various filters to reduce noise, this meeting is so that system needs the adjustment of bias voltage
Long period.In addition, feedback system needs to identify measured signal during bias adjustment, calculates and judges,
Which in turns increases system detection times.As known from the above, the speed of detection of system will receive and largely influence, and limit
Its application in continuous optical signal detection and Quick photoelectric detection system.For example, being commonly applied in avalanche photodide
Fluorescence detection system in, in order to reduce the influence of photobleaching (also referred to as photobleaching, photobleaching), avoid to fluorescence
The photochemistry of group is destroyed, and exposure and detection time are generally very short, and above-described design obviously can not be applied to this field.
In order to solve problem above, the invention discloses a kind of Larger Dynamic models based on avalanche photodiode array chip
Weak light detection system is enclosed, can be widely used for laser ranging, DNA sequencing, the distribution of quantum secret key, laser radar and medical imaging etc.
Weak light detection field.It is using avalanche photodiode array chip as sensor devices, avalanche photodiode array chip
In each avalanche photodide worked in respectively under the control of bias generator module and bias control module it is different
Under conditions of operating mode and different internal gains, rear end reads two pole of photoelectricity connected with signal processing circuit according to front end
It can be front-end amplifier (TIA) or quenching circuit and photon counter depending on the bias of pipe and working region.Pass through this side
Formula, the photoelectric detecting system can realize the detection of the optical signal to power wide variation, be greatly improved detector
Dynamic range (from the optical signal of single photon magnitude to stronger optical signal).In addition, in detection process, avalanche photodide battle array
The bias of each detector in column chip is constant, adjusts without additional, and each in avalanche photodiode array chip
A detector can export electric signal by transmitting photo-signal simultaneously, so that total system can be continuous, quickly carry out to incident optical signal
Detection and output.
(3) summary of the invention
The purpose of the present invention is to provide a kind of, and the Larger Dynamic range photoelectricity based on avalanche photodiode array chip is visited
Examining system.
The object of the present invention is achieved like this:
The system is by bias generator module 1, bias control module 2, avalanche photodiode array chip 3, light source
4 and signal read and processing system 5 form.Bias generator module 1 generates high voltage, and is exported by bias control module 2
Reverse bias voltage needed for each photodiode in avalanche photodiode array chip 3, bias control module 2 have multiple
Output control module is respectively used to control each output voltage, the quantity and avalanche photodiode array chip of output voltage
The number of avalanche photodide is identical in 3；Photodiode in avalanche photodiode array chip 3 is biased control mould
The output voltage of block 2 is offset to different working conditions, for detecting the incident light of the varying strength issued from light source 4；Snowslide
The output of each avalanche photodide is connected to signal and reads and processing system 5, signal reading in photodiode array chip 3
It is read and is located with output signal of the processing system 5 to each photodiode in avalanche photodiode array chip 3 out
Reason, finally provides measurement result.
Bias generator module 1 is a voltage transformation module, and the voltage of input is converted to and is suitable for used in rear end
The DC voltage of avalanche photodide and output, for biasing avalanche photodide.Its structure can be DC-DC conversion electricity
Any one of road either AC-DC conversion circuit, structure used are determined by the voltage type and size of its input.Bias hair
The input of raw device module 1 can be one of standard 220V/110V alternating voltage, desk-top DC voltage source voltage, can also be with
It is one kind of standard USB 5V voltage or battery input voltage used in portable instrument equipment.Bias generator module
1 output is DC voltage, and range can cover each operating mode of biased photodiode, including linear model and
Monochromatic light subpattern.
The single channel DC voltage that bias generator module 1 exports can be divided into multichannel and divided by bias control module 2
It is other that each channel output voltage is controlled, the controllable DC voltage of multichannel is exported, for biasing avalanche photodide battle array
Each avalanche photodide in column chip 3.The output channel number and biasing avalanche photodide battle array of bias control module 2
Photodiode number in column chip 3 is identical.Each channel output voltage of bias control module 2 is according to biasing avalanche optoelectronic two
The voltage characteristic of photodiode in pole pipe array chip 3 is configured, and makes to bias in avalanche photodiode array chip 3
Each photodiode work under gain condition in different mode and difference, incident optical signal for varying strength
Detection.
Avalanche photodide in avalanche photodiode array chip 3 can be based on silicon (Silicon), germanium
(Germanium), indium gallium arsenic (InGaAs) or indium gallium arsenic/indium phosphide (InGaAs/InP) avalanche photodide is any
It is a kind of.Photodiode number and its bias voltage in avalanche photodiode array chip 3 can be according to institute's detectable signals
Light intensity variation range, the voltage characteristic of photodiode used and signal-to-noise performance determine.Avalanche photodiode array
Avalanche photodide in chip 3 is biased against the output voltage control of control module 2, works in different mode and difference
Under portion's gain, after the incident light for receiving the varying strength issued from light source 4, electric signal and synchronism output are converted optical signals to
It is read and processing system 5 to signal.
Light source 4 can be the fluorescent exciting signal in fluorescence detection system, the Ruili reflection in optical time domain reflection system
Optical signal, the signal of communication in communication system, interference signal and surface plasma resonance detection in fiber optic sensor system
One kind of the various optical signals such as the reflection signal of system.
Signal read and processing system 5 in avalanche photodiode array chip 3 each avalanche photodide it is defeated
Signal is read and is handled out.The number and avalanche optoelectronic two of signal reading and the input of processing system 5 and reading circuit
The number of photodiode in pole pipe array chip 3 is identical.Signal reads and is directed to avalanche photodide in processing system 5
The avalanche photodide that different mode is worked in array chip 3 has different reading circuits, works in linear model
The output of avalanche photodide will be connected to frontend amplifying circuit (TIA), and output data is that light converts voltage；Work in monochromatic light
The output of the photodiode of subpattern will be connected to (actively or passively) quenching circuit and pulse-scaling circuit, export as voltage
Pulse either photon count rate.
No matter avalanche photodide works in monochromatic light subpattern or linear model, and internal gain is with bias voltage
Increase and increase, and noise can also increase with the increase of internal gain, and therefore, the noise of avalanche photodide also can
Increase with the increase of bias voltage.Under conditions of it is offset to high voltage, internal gain is bigger, can have higher
Sensitivity, be more advantageous to the detection of faint light, but since noise is bigger, dynamic range is restricted, and can not detect strong light
(easily reaching saturation output)；When it is offset under relatively low bias voltage, internal gain is relatively small, can detect compared with
Strong optical signal, but faint optical signal can not be identified.
Using avalanche photodiode array chip as detector, by bias module and bias voltage control occur for the present invention
Module adjusts separately the bias of each avalanche photodide in array, it is made to have different internal gains, work
Make in different modes (linear model or single photon detection mode).Avalanche photodide part in array works in line
Sexual norm partially works in single photon detection mode, and the photodiode to work under same mode can also be in bias control module
It is worked under control under conditions of different internal gains, further expands the dynamic range of the detectable optical signal of whole chip.This
The avalanche photodide worked under different mode and different internal gains a bit is each responsible for entering varying strength range
It penetrates optical signal and carries out detection and photoelectric conversion, and at the same time output, so that entire detection chip and whole detection system possess
Larger Dynamic range, the photodetection ability of high speed.
(4) Detailed description of the invention
Fig. 1 is the structural representation based on the Larger Dynamic range weak light detection system based on avalanche photodiode array chip
Figure.By bias generator module 1, bias control module 2, avalanche photodiode array chip 3, light source 4 and signal read and
Processing system 5 forms.
Fig. 2 is the high dynamic range weak light detection system based on avalanche photodiode array chip and its bias control circuit
The embodiment schematic diagram of system.System is by bias generator module 201, bias control module 202, avalanche photodiode array
Chip 203, light source 204 and signal are read and processing system 205 forms.Bias generator module 201 generates high voltage (Vcp_
Output), and by bias control module 202 each photodiode institute in avalanche photodiode array chip 203 is exported
Need voltage, bias control module 202 have 5 output control modules be respectively used to control 5 output voltages (Vbias1~
Vbias5), the number of output voltage is identical as the number of photodiode in avalanche photodiode array chip 3；Snowslide light
The output voltage that photodiode in electric diode array chip 3 is biased control module 2 is offset to different working conditions,
For detecting the incident light of the varying strength issued from light source 4；Each photodiode in avalanche photodiode array chip 3
Output be connected to signal read and processing system 5, signal read and processing system 5 to avalanche photodiode array chip 3
In the output signal of each photodiode read and handled, finally provide measurement result.
Fig. 3 is the schematic diagram of bias generator module in embodiment, is charge pump used in bias generator module
The voltage booster of (Charge pump) type.
Fig. 4 is the structural schematic diagram of bias control module and the bias control circuit of one output channel.Bias voltage control
Electric routing resistance Rc, R1 and R2, n type field effect transistor Q1 and comparator U1 composition.
Fig. 5 is that avalanche photodide array chip 203 and back end signal are read and processing system 205 in embodiment
Structural representation, in avalanche photodiode array chip, it is front-end amplifier electricity that the rear end of APD1~APD3 connection, which reads module,
Road (TIA) output is the voltage after photoelectric conversion, and the rear end that APD4~APD5 is connected is read and signal processing module is to be quenched
Circuit (can be to be passively or actively quenching circuit) and Photo Counting System, output photon counting rate.
Fig. 6 is in embodiment, the output of APD1~APD5 and incident optical signal in avalanche photodiode array chip
The relation schematic diagram of intensity.
(5) specific embodiment
Below with reference to specific embodiment, the present invention is further explained.
Fig. 2 gives to be visited based on the Larger Dynamic range dim light of avalanche photodiode array chip and its bias control circuit
The embodiment of examining system.System is by bias generator module 201, bias control module 202, avalanche photodiode array core
Piece 203, light source 204 and signal are read and processing system 205 forms.Bias generator module 201 generates high voltage (Vcp_
Output), and by bias control module 202 each photodiode institute in avalanche photodiode array chip 203 is exported
Need bias voltage, bias control module 202 have 5 output control modules be respectively used to control output voltage Vbias1~
The number of Vbias5, output voltage are identical as the number of avalanche photodide in avalanche photodiode array chip 3；Snowslide
The output voltage that avalanche photodide in photodiode array chip 3 is biased control module 2 is offset to different works
Make state, for detecting the incident light of the varying strength issued from light source 4；Each light in avalanche photodiode array chip 3
The output of electric diode is connected to signal reading and processing system 5, and signal is read and processing system 5 is to avalanche photodide battle array
The output signal of each photodiode is read and is handled in column chip 3, finally provides measurement result.
It is wherein the voltage booster of charge pump (Charge pump) type used in bias generator module, such as Fig. 3 institute
Show.Bias control module is as shown in figure 4, the output for an output channel being described below in bias control module controls electricity
The principle on road (Bias voltage controller1), the control principle of other bias output channels are identical.Output control
Electric routing resistance Rc, R1 and R2, n type field effect transistor Q1 and comparator U1 composition.Its working principle is that:
In output control circuit, Rc is used to for each bias output channel in bias control module being isolated, so that respectively
A bias output channel can be independently controlled.N type field effect transistor Q1 and output loading are connected in parallel, and being functionally similar to can
Become current divider, the adjusting for output voltage.R1 and R2 is used to output voltage being reduced to comparable level, V1, and connects
To the positive input of comparator U1, and adjust the reverse input end that level Vref is connected to comparator.When V1 has been more than to adjust
Level Vref, comparator U1 will generate the poor directly proportional output voltage between Vref and V1, n type field effect transistor Q1
It will be biased to shunt output electric current, V_bias1 will decline, and V1 is also with reduction；Level Vref is adjusted when V1 is lower than, than
Low level will be exported compared with device U1, n type field effect transistor will be closed, and output electric current loads lasting flow direction, V_
Bias1 will rise, and V1 is also with rising.By this mode, V1 can be adjusted to very close Vref.And by setting
It sets and adjusts level Vref, thus it is possible to vary output voltage V_bias1.The relationship of output voltage V_bias1 and Vref may be expressed as:
The quantity of avalanche photodide is 5 (APD1~APD5) in avalanche photodiode array chip 203, they
Under the conditions of working in different operating modes and different internal gains under the adjustment of bias control module 202, to realize
Required measurement optical signal range is covered each by, the size of reverse bias voltage Vbias1~Vbias5 of APD1~APD5 is closed
System is as shown in formula (2):
Vbias1<Vbias2<Vbias3<Vbreak<Vbias4<Vbias5 (2)
V in formulabreakFor the breakdown reverse voltage of avalanche photodide, under such bias voltage control, APD1~APD3
Linear model is worked in, APD4~APD5 works in monochromatic light subpattern.
It is that front-end amplifier circuit (TIA) export is electricity after photoelectric conversion that the rear end of APD1~APD3 connection, which reads module,
Pressure, the rear end that APD4~APD5 is connected is read and signal processing module is quenching circuit (can be to be passively or actively quenching circuit)
And Photo Counting System, as shown in Figure 5.When the work of whole detection system, bias generator module and bias control module
Continual and steady bias voltage is provided for avalanche photodide in avalanche photodiode array chip.Avalanche photodide
Each avalanche photodide in array chip works under different working modes, there is a different internal gains, and APD1~
The relationship of the intensity of the output and incident optical signal of APD5 is as shown in Figure 6.When the incident optical signal to certain power measures
When, only 1 APD exports useful signal, such as: when the optical signal from light source incidence is fainter, if APD5 output is effective
Signal, then APD1~APD4 output signal is fallen into oblivion in background noise；When the optical signal from light source incidence is stronger, as APD1 is exported
Useful signal, then APD2~APD5 will only export saturation signal.
Claims (6)
1. a kind of Larger Dynamic range weak light detection system based on avalanche photodiode array chip.It is characterized in that: it is by inclined
Press generator module 1, bias control module 2, avalanche photodiode array chip 3, light source 4 and signal reading and processing system
5 composition of system.Bias generator module 1 generates high voltage in the system, and exports avalanche optoelectronic two by bias control module 2
Reverse bias voltage needed for each photodiode in pole pipe array chip 3, bias control module 2 have multiple output control moulds
Block is respectively used to control each output voltage, snowslide light in the quantity and avalanche photodiode array chip 3 of output voltage
The number of electric diode is identical；Photodiode in avalanche photodiode array chip 3 is biased the output of control module 2
Voltage bias is in different working conditions, for detecting the incident light of the varying strength issued from light source 4；Avalanche photodide
The output of each avalanche photodide is connected to signal and reads and processing system 5, signal reading and processing system in array chip 3
The output signal of each photodiode in 5 pairs of avalanche photodiode array chips 3 of uniting is read and is handled, and is finally provided
Measurement result.
2. bias generation module 1 according to claim 1, it is characterized in that: bias generator module 1 is a voltage conversion
The voltage of input is converted to DC voltage and the output for being suitable for avalanche photodide used in rear end by module, for inclined
Set avalanche photodide.Its structure can be any one of DC-DC conversion circuit either AC-DC conversion circuit, used
Structure is determined by the voltage type and size of its input.The input of bias generator module 1 can be standard 220V/110V friendship
Galvanic electricity pressure, one of desk-top DC voltage source voltage are also possible to the standard USB 5V used in portable instrument equipment
One kind of voltage or battery input voltage.The output of bias generator module 1 is DC voltage, and range can be covered and be biased
Photodiode each operating mode, including linear model and monochromatic light subpattern.
3. bias control module 2 according to claim 1, it is characterized in that: bias control module 2 can be by bias generator mould
The single channel DC voltage that block 1 exports is divided into multichannel and controls respectively each channel output voltage, exports multi-pass
The controllable DC voltage in road, for biasing each avalanche photodide in avalanche photodiode array chip 3.Bias voltage control
The output channel number of module 2 is identical as the photodiode number in biasing avalanche photodiode array chip 3.Bias voltage control
Each channel output voltage of module 2 is according to the voltage characteristic for biasing the photodiode in avalanche photodiode array chip 3
It is configured, does not make to bias each photodiode work in avalanche photodiode array chip 3 in different mode and not
With under interior gain condition, the detection of the incident optical signal for varying strength.
4. avalanche photodiode array chip 3 according to claim 1, it is characterized in that: avalanche photodiode array
Avalanche photodide in chip 3 can be based on silicon (Silicon), germanium (Germanium), indium gallium arsenic (InGaAs) or
Any one of indium gallium arsenic/indium phosphide (InGaAs/InP) avalanche photodide.In avalanche photodiode array chip 3
Photodiode number and its bias voltage can be according to the light intensity variation range of institute's detectable signal, the electricity of photodiode used
Characteristic and signal-to-noise performance is pressed to determine.Avalanche photodide in avalanche photodiode array chip 3 is biased against control
The output voltage control of molding block 2 works under different mode and different internal gains, issues not receiving from light source 4
After the incident light of intensity, converts optical signals to electric signal and synchronism output is read to signal and processing system 5.
5. light source 4 according to claim 1, it is characterized in that: light source 4 can be the fluorescent exciting in fluorescence detection system
Signal, the Ruili reflected light signal in optical time domain reflection system, the signal of communication in communication system, in fiber optic sensor system
One kind of the various optical signals such as interference signal and the reflection signal of surface plasma resonance detection system.
6. signal according to claim 1 is read and processing system 5, it is characterized in that: signal is read and 5 pairs of processing system snow
The output signal of each avalanche photodide is read and is handled in avalanche photo diode array chip 3.Signal read and
The number of the input of processing system 5 and the photodiode in the number of reading circuit and avalanche photodiode array chip 3
Mesh is identical.Signal reads and is directed to the snowslide for working in different mode in avalanche photodiode array chip 3 in processing system 5
Photodiode has different reading circuits, and the output for working in the avalanche photodide of linear model will be connected to front end
Amplifying circuit (TIA), output data are that light converts voltage；The output for working in the photodiode of monochromatic light subpattern will be connected to
(actively or passively) quenching circuit and pulse-scaling circuit export as voltage pulse either photon count rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810830552.3A CN109100018B (en) | 2018-07-26 | 2018-07-26 | Large-dynamic-range weak light detection system based on avalanche photodiode array chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810830552.3A CN109100018B (en) | 2018-07-26 | 2018-07-26 | Large-dynamic-range weak light detection system based on avalanche photodiode array chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108318132A (en) * | 2018-04-03 | 2018-07-24 | 福建海创光电有限公司 | A kind of device expanding APD linear probing ranges |
| CN110275156A (en) * | 2019-07-10 | 2019-09-24 | 北京富通芯科技有限公司 | The bias voltage scaling method and device of avalanche photodide in laser radar |
| CN110470387A (en) * | 2019-08-09 | 2019-11-19 | 中国科学院光电技术研究所 | A kind of single-photon laser radar installations based on multi-detector |
| CN110488174A (en) * | 2019-08-26 | 2019-11-22 | 上海禾赛光电科技有限公司 | The breakdown voltage of photodiode is tested |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106033225A (en) * | 2015-03-16 | 2016-10-19 | 苏州旭创科技有限公司 | Low-power consumption APD bias controller, bias control method, and photoelectric receiver |
| CN107271055A (en) * | 2016-04-20 | 2017-10-20 | 中国科学技术大学 | A kind of infrared single photon detectorses system of parallel avalanche photodiode array structure |
| WO2018073112A1 (en) * | 2016-10-19 | 2018-04-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Charge avalanche photodetector system |
| EP3339886A1 (en) * | 2016-12-22 | 2018-06-27 | Sick AG | Light receiving device with a plurality of avalanche photo diode elements and method for supplying with a preload |
-
2018
- 2018-07-26 CN CN201810830552.3A patent/CN109100018B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106033225A (en) * | 2015-03-16 | 2016-10-19 | 苏州旭创科技有限公司 | Low-power consumption APD bias controller, bias control method, and photoelectric receiver |
| CN107271055A (en) * | 2016-04-20 | 2017-10-20 | 中国科学技术大学 | A kind of infrared single photon detectorses system of parallel avalanche photodiode array structure |
| WO2018073112A1 (en) * | 2016-10-19 | 2018-04-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Charge avalanche photodetector system |
| EP3339886A1 (en) * | 2016-12-22 | 2018-06-27 | Sick AG | Light receiving device with a plurality of avalanche photo diode elements and method for supplying with a preload |
Cited By (17)
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|---|---|---|---|---|
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| CN108318132B (en) * | 2018-04-03 | 2024-02-20 | 福建海创光电技术股份有限公司 | Device for expanding linear detection range of APD |
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| CN110488174A (en) * | 2019-08-26 | 2019-11-22 | 上海禾赛光电科技有限公司 | The breakdown voltage of photodiode is tested |
| CN110596717A (en) * | 2019-09-19 | 2019-12-20 | 中国科学院长春光学精密机械与物理研究所 | Laser echo processing embedded module, laser ranging method and system |
| CN111122541A (en) * | 2019-12-25 | 2020-05-08 | 桂林电子科技大学 | Optical fiber probe system for distinguishing Raman signal and fluorescence signal |
| CN111982166A (en) * | 2020-08-14 | 2020-11-24 | 桂林电子科技大学 | Photoelectric detector array and system for multi-core optical fiber spectral coupling |
| WO2022170476A1 (en) * | 2021-02-09 | 2022-08-18 | 深圳市大疆创新科技有限公司 | Laser receiving circuit and control method therefor, ranging device, and mobile platform |
| CN113311753A (en) * | 2021-05-26 | 2021-08-27 | 桂林电子科技大学 | APD high signal-to-noise ratio gain automatic selection control device and method |
| CN113411132A (en) * | 2021-06-17 | 2021-09-17 | 桂林电子科技大学 | Multifunctional optical repeater system |
| WO2023024492A1 (en) * | 2021-08-26 | 2023-03-02 | 上海禾赛科技有限公司 | Laser radar and method for performing three-dimensional detection using same |
| CN114543990A (en) * | 2022-02-28 | 2022-05-27 | 中国电子科技集团公司第三十八研究所 | Free-running single photon detector and reading circuit |
| CN114543990B (en) * | 2022-02-28 | 2023-05-19 | 中国电子科技集团公司第三十八研究所 | Free-running single photon detector and reading circuit |
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