CN109096667B - Quantum dot film and structure containing same - Google Patents

Quantum dot film and structure containing same Download PDF

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CN109096667B
CN109096667B CN201810938702.2A CN201810938702A CN109096667B CN 109096667 B CN109096667 B CN 109096667B CN 201810938702 A CN201810938702 A CN 201810938702A CN 109096667 B CN109096667 B CN 109096667B
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quantum dot
dot film
quantum
quantum dots
polyvinyl butyral
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CN109096667A (en
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马卜
徐晓波
吴悦迪
鲁昱
王允军
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Suzhou Xingshuo Nanotech Co Ltd
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Suzhou Xingshuo Nanotech Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/304—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/71—Resistive to light or to UV
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2329/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Derivatives of such polymer
    • C08J2329/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
    • C08K13/02—Organic and inorganic ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/32—Phosphorus-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/10—Esters; Ether-esters
    • C08K5/101—Esters; Ether-esters of monocarboxylic acids
    • C08K5/103—Esters; Ether-esters of monocarboxylic acids with polyalcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/49—Phosphorus-containing compounds
    • C08K5/51—Phosphorus bound to oxygen
    • C08K5/53—Phosphorus bound to oxygen bound to oxygen and to carbon only
    • C08K5/5397—Phosphine oxides

Abstract

The invention discloses a quantum dot film and a structure containing the quantum dot film. In the quantum dot film, the quantum dots can absorb ultraviolet rays, and the quantum dots have relatively stable chemical properties. After the quantum dots absorb ultraviolet rays, the quantum dots are not degraded, and the capability of the quantum dot film for absorbing the ultraviolet rays is not reduced or is not failed. The structure includes the quantum dot film.

Description

Quantum dot film and structure containing same
Technical Field
The application belongs to the field of quantum dots, and particularly relates to a quantum dot film and a structure containing the quantum dot film.
Background
The excessively strong ultraviolet rays may damage the human body or discolor colored objects. In daily life, ultraviolet rays are prevented by using an ultraviolet absorbing film. In the conventional ultraviolet absorbing film, ultraviolet rays are absorbed by an ultraviolet absorber, thereby preventing ultraviolet rays.
However, these ultraviolet absorbers degrade over time, and thus adversely affect the absorption of ultraviolet rays by the ultraviolet absorbing film.
Disclosure of Invention
In view of the above technical problems, the present application provides a chemically stable ultraviolet absorbing film.
A quantum dot film, comprising: a host material; and quantum dots dispersed in the host material and absorbing ultraviolet rays.
In the quantum dot film, the quantum dots can absorb ultraviolet rays, and the quantum dots have relatively stable chemical properties. After the quantum dots absorb ultraviolet rays, the quantum dots are not degraded, and the capability of the quantum dot film for absorbing the ultraviolet rays is not reduced or is not lost.
In one embodiment, the fluorescence quantum efficiency of the quantum dots is 0% -30%; preferably, the quantum dot has a fluorescence quantum efficiency of 0% to 10%.
In one embodiment, the host material comprises: polyvinyl butyral; an auxiliary agent dispersed in the polyvinyl butyral; preferably, the polyvinyl butyral has a number average molecular weight of 10000 to 200000.
In one embodiment, the quantum dots: auxiliary agent: the mass ratio of the polyvinyl butyral is 1: (25000 to 35000): (8000-12000).
In one embodiment, the adjuvant is triethylene glycol diisocaprylate; preferably, the ratio of quantum dots: triethylene glycol diisocaprylate: the mass ratio of the polyvinyl butyral to the polyvinyl butyral is 1: (28000-32000): (8500-11500).
In one embodiment, the quantum dots comprise ZnSe or InP quantum dots.
In one embodiment, the quantum dot comprises a ligand; preferably, the ligand comprises n-octyl mercaptan or oleic acid or oleylamine or trioctylphosphine oxide.
A quantum dot film-containing structure, comprising: transparent base plate and quantum dot film, quantum dot film includes: a host material; and quantum dots dispersed in the host material to absorb ultraviolet rays.
In one embodiment, the thickness of the quantum dot film is 0.01-1 mm.
In one embodiment, two transparent substrates are included, and the two transparent substrates are respectively arranged on two sides of the quantum dot film.
Drawings
Fig. 1 is a schematic structural view of a quantum dot glass according to an embodiment of the present application.
In the drawings like parts are provided with the same reference numerals. The figures show embodiments of the application only schematically.
Detailed Description
The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.
This embodiment discloses a quantum dot film including a host material and quantum dots dispersed in the host material, the quantum dots being configured to absorb ultraviolet rays.
In the quantum dot film, the quantum dots can absorb ultraviolet rays, and the quantum dots have relatively stable chemical properties. After the quantum dots absorb ultraviolet rays, the quantum dots are not degraded, and the capability of the quantum dot film for absorbing the ultraviolet rays is not reduced or is not failed.
In the present embodiment, the fluorescence quantum efficiency of the quantum dots is 0% to 30%, the light conversion efficiency of the quantum dots is poor, and the quantum dots absorb light and emit less light. Furthermore, the fluorescence quantum efficiency of the quantum dots is 0% -10%, and the quantum dots can hardly emit light after absorbing light or emit weak light. Therefore, after these quantum dots absorb ultraviolet rays, the intensity of light no longer undergoes light conversion or conversion is very weak. That is to say, the quantum dot film after the quantum dots with the fluorescence quantum efficiency of 0% -30% or 0% -10% are adopted can absorb ultraviolet rays, and the quantum dot film does not emit light or emit light with weak intensity any more, and does not interfere or influence light with other wavelengths in the environment, so that the quantum dot film does not cause adverse effect on daily life.
At present, when quantum dots are prepared or used, higher fluorescence quantum efficiency is pursued, and the fluorescence quantum efficiency is further improved. At present, the fluorescence quantum efficiency of some quantum dots can reach more than 95%. The low fluorescence quantum efficiency of quantum dots is considered a disadvantage.
On the other hand, the quantum dots used in the present invention need not only higher fluorescence quantum efficiency but also lower fluorescence quantum efficiency as better. That is, the quantum dots employed in the present invention are capable of absorbing a large amount of light without converting the absorbed light in the form of light or converting only a small portion of the light. The quantum dot film skillfully utilizes the low fluorescence quantum efficiency of the quantum dots, and when the quantum dots which are considered to have obvious disadvantages are arranged in the quantum dot film, the quantum dot film absorbs ultraviolet rays and has little or no interference on light of other wave bands in the environment, so that the quantum dot film is widely applied to daily life and has adverse effect on daily life, but has an advantage, thereby achieving the effect which is unexpected.
Here, the quantum dots having high fluorescence quantum efficiency can be placed in an environment where the temperature is 85 ℃ and the relative humidity is 85%, thereby reducing the fluorescence quantum efficiency of the quantum dots. After 48 hours in the environment, the fluorescence quantum efficiency of the quantum dots is obviously reduced, and the fluorescence quantum efficiency of the quantum dots can be reduced to below 30%.
In this embodiment, the quantum dots comprise ZnSe or InP quantum dots. The core of these quantum dots is made of ZnSe or InP, which may further include a shell or/and a ligand, etc.
Among them, the ligand of these quantum dots includes n-octyl mercaptan or oleic acid or oleylamine or trioctylphosphine oxide. After the quantum dots comprise the ligands, the possibility of agglomeration of the quantum dots in the quantum dot film is reduced, and the quantum dot film has better dispersibility, so that the quantum dot film can absorb ultraviolet rays uniformly on the whole.
The host material in the quantum dot film may be composed of a polymer or a high molecular material or the like, and the quantum dots are dispersed in the host material. In this embodiment, the host material may include polyvinyl butyral and an auxiliary agent. Since the polyvinyl butyral has excellent optical properties and chemical stability, the quantum dot film adopts the polyvinyl butyral as a host material, so that the quantum dot film has excellent optical properties and chemical stability. The quantum dot film has excellent transmittance for light of other wavelength bands while absorbing ultraviolet rays. However, the quantum dots are directly dispersed in the polyvinyl butyral, and the dispersibility of the quantum dots is not good. The quantum dots can be better dispersed in the host material comprising the polyvinyl butyral and the auxiliary agent by adding the corresponding auxiliary agent into the polyvinyl butyral.
The inventor finds that when the number average molecular weight of the polyvinyl butyral is 10000-200000, the quantum dot film can have better stability and optical property. Thereby improving the service life and the effect of the quantum dot film.
When the mass ratio of the quantum dots to the auxiliary agent to the polyvinyl butyral is 1: (25000 to 35000): (8000-12000), the quantum dots in the quantum dot film have good dispersibility, are not easy to agglomerate, and have good ultraviolet absorption performance. The total mass ratio of the quantum dots in the quantum dot film is one of several ten-thousandth, so that the quantum dots only need a small amount to achieve a good ultraviolet absorption effect, and the cost of the quantum dot film is low.
The auxiliary agent can be aliphatic dibasic acid esters, phthalic acid esters (including phthalic acid esters and terephthalic acid esters), benzene polyacid esters, benzoic acid esters, polyol esters, chlorinated hydrocarbons, epoxy compounds, citric acid esters, polyesters and the like. In this embodiment, the preferred adjuvant is triethylene glycol diisooctanoate. The inventors have surprisingly found that the addition of triethylene glycol diisocaprylate to polyvinyl butyral allows quantum dots to have very excellent dispersibility in polyvinyl butyral. Since the quantum dot film mainly includes polyvinyl butyral, the quantum dots also have excellent dispersibility in the quantum dot film. Thus, the excellent dispersibility of quantum dots in polyvinyl butyral is associated with the addition of triethylene glycol diisooctanoate to polyvinyl butyral. The quantum dots have excellent dispersibility in the whole quantum dot film, no agglomeration phenomenon is generated among the quantum dots, the ultraviolet absorption capacity is not greatly reduced, and the ultraviolet absorption is uniform on the whole.
Furthermore, the mass ratio of the quantum dots, the triethylene glycol diisocaprylate and the polyvinyl butyral is 1: (28000-32000): (8500-11500). The quantum dot film within this ratio range has excellent ultraviolet absorption properties and excellent chemical stability.
Referring now to fig. 1, this embodiment also discloses a structure 1 containing a quantum dot film, the structure 1 comprising a first transparent substrate 11 and the quantum dot film 12 described above. The quantum dot film 12 includes a host material and quantum dots dispersed in the host material, the quantum dots being capable of absorbing ultraviolet light. The structure 1 can thus absorb ultraviolet rays, thereby reducing the adverse effects of ultraviolet rays on the human body and the like.
The thickness of the quantum dot film 12 is 0.01-1 mm, and the quantum dot film has good ultraviolet absorption and good light transmittance.
Of course, the other side of the quantum dot film 12 may also be provided with a second transparent substrate 13, thereby forming a sandwich structure in which the quantum dot film 12 is located between the first transparent substrate 11 and the second transparent substrate 13.
The specific structure of the structure containing the quantum dot film in the present invention will be described below with reference to several specific examples.
Example 1:
glass substrates are arranged on two sides of the quantum dot film. The thickness of the quantum dot film was 0.38 mm. The quantum dot film comprises ZnSe quantum dots, triethylene glycol diisocaprylate and polyvinyl butyral, and the mass ratio of the ZnSe quantum dots to the triethylene glycol diisocaprylate to the polyvinyl butyral is 1: 30000: 10000. the number average molecular weight of the polyvinyl butyral is 100000.
The ligand of the ZnSe quantum dot comprises n-octyl mercaptan and oleic acid.
Example 2:
both sides of the quantum dot film are provided with PET substrates. The thickness of the quantum dot film was 0.76 mm. The quantum dot film comprises InP quantum dots, triethylene glycol diisocaprylate and polyvinyl butyral, wherein the mass ratio of the InP quantum dots to the triethylene glycol diisocaprylate to the polyvinyl butyral is 1: 32000: 10000. the polyvinyl butyral has a number average molecular weight of 12000.
The InP quantum dot linked ligands include oleic acid.
Example 3:
one side of the quantum dot film is provided with a glass substrate, and the other side of the quantum dot film is provided with a barrier film. The thickness of the quantum dot film was 0.05 mm. The quantum dot film comprises ZnSe quantum dots, dioctyl phthalate and polyvinyl butyral, wherein the mass ratio of the ZnSe quantum dots to the dioctyl phthalate to the polyvinyl butyral is 1: 26000: 12000. the number average molecular weight of the polyvinyl butyral was 15000.
The ZnSe quantum dot linked ligands include trioctylphosphine and trioctylphosphine oxide.
Example 4:
and PVC substrates are arranged on two sides of the quantum dot film. The thickness of the quantum dot film was 0.50 mm. The quantum dot film comprises InP quantum dots, triethylene glycol diisocaprylate and polyvinyl butyral, wherein the mass ratio of the InP quantum dots to the triethylene glycol diisocaprylate to the polyvinyl butyral is 1: 31000: 8500. the number average molecular weight of the polyvinyl butyral was 180000.
The InP quantum dot linked ligands include oleylamine.
The quantum dot films of examples 1 to 4 were exposed to long-term irradiation of ultraviolet rays, and ultraviolet absorption spectra were measured at the initial state of the structures containing the quantum dot films and after the lapse of 800 hours of ultraviolet irradiation, respectively. The measurement shows that the ultraviolet absorptivity of the quantum dot films in examples 1 to 4 is not obviously attenuated after the quantum dot films are irradiated by ultraviolet rays for a long time, so that the chemical properties of the quantum dot films in the examples are relatively stable, and the quantum dots do not degrade after absorbing the ultraviolet rays.
As can be seen from the above examples, the uv absorption capacity of these structures containing quantum dot films did not significantly decrease over time. Since the quantum dot films are not greatly changed after long-term ultraviolet irradiation, the quantum dot films and the structures with the quantum dot films disclosed by the invention have better stability.
Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.

Claims (13)

1. A quantum dot film, comprising: a host material, the host material comprising: polyvinyl butyral;
quantum dots dispersed in the host material to absorb ultraviolet rays;
wherein the fluorescence quantum efficiency of the quantum dots is 0-30%.
2. The quantum dot film of claim 1, wherein the quantum dots have a fluorescence quantum efficiency of 0% to 10%.
3. The quantum dot film of claim 1, wherein the host material further comprises an adjuvant dispersed in the polyvinyl butyral.
4. The quantum dot film according to claim 3, wherein the polyvinyl butyral has a number average molecular weight of 10000 to 200000.
5. The quantum dot film of claim 3, wherein the quantum dots: auxiliary agent: the mass ratio of the polyvinyl butyral is 1: (25000 to 35000): (8000-12000).
6. The quantum dot film of claim 3, wherein the auxiliary agent is triethylene glycol diisooctanoate.
7. The quantum dot film of claim 6, wherein the quantum dot: triethylene glycol diisocaprylate: the mass ratio of the polyvinyl butyral to the polyvinyl butyral is 1: (28000-32000): (8500-11500).
8. The quantum dot film of any of claims 1-7, wherein the quantum dots comprise ZnSe or InP quantum dots.
9. The quantum dot film of any one of claims 1 to 7, wherein the quantum dots comprise ligands.
10. The quantum dot film of claim 9, wherein the ligand comprises n-octyl thiol or oleic acid or oleylamine or trioctylphosphine oxide.
11. A structure containing a quantum dot film, comprising: a transparent substrate and a quantum dot film, the quantum dot film comprising: a host material, the host material comprising: polyvinyl butyral;
quantum dots dispersed in the host material to absorb ultraviolet rays;
wherein the fluorescence quantum efficiency of the quantum dots is 0-30%.
12. The structure comprising a quantum dot film according to claim 11, wherein the quantum dot film has a thickness of 0.01 to 1 mm.
13. The quantum dot film-containing structure of claim 12, comprising two transparent substrates disposed on opposite sides of the quantum dot film.
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CN101831711A (en) * 2009-03-09 2010-09-15 苏州市长三角系统生物交叉科学研究院有限公司 Microwave preparation method of water soluble ZnSe quantum dots
CN102002365A (en) * 2009-08-31 2011-04-06 孙晓东 Transparent nano florescent material composition and application thereof in invisible anti-counterfeiting products
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