CN109096667A - Quantum dot film and structure containing quantum dot film - Google Patents
Quantum dot film and structure containing quantum dot film Download PDFInfo
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- CN109096667A CN109096667A CN201810938702.2A CN201810938702A CN109096667A CN 109096667 A CN109096667 A CN 109096667A CN 201810938702 A CN201810938702 A CN 201810938702A CN 109096667 A CN109096667 A CN 109096667A
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- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/304—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/71—Resistive to light or to UV
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08J2329/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Derivatives of such polymer
- C08J2329/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
- C08K13/02—Organic and inorganic ingredients
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
- C08K5/101—Esters; Ether-esters of monocarboxylic acids
- C08K5/103—Esters; Ether-esters of monocarboxylic acids with polyalcohols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/37—Thiols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/51—Phosphorus bound to oxygen
- C08K5/53—Phosphorus bound to oxygen bound to oxygen and to carbon only
- C08K5/5397—Phosphine oxides
Abstract
A kind of structure the invention discloses quantum dot film and containing the quantum dot film, which includes material of main part and quantum dot, which is dispersed in material of main part, these quantum dots are to absorb ultraviolet light.In the quantum dot film, quantum dot can absorb ultraviolet light, and quantum dot has more stable chemical property.It, will not be there is a phenomenon where degrading after quantum dot absorbs ultraviolet light, the ability which absorbs ultraviolet light, which will not reduce less, will cause failure.The structure includes the quantum dot film.
Description
Technical field
The application belongs to quantum dot field, in particular to a kind of quantum dot film and the structure containing the quantum dot film.
Background technique
Too strong ultraviolet light has injury to human body or colored objects is made to fade.In daily life, ultraviolet-absorbing film is utilized
Ultraviolet light is taken precautions against.Existing UVR absorbing film absorbs ultraviolet light by ultraviolet absorbing agent, to realize
Prevention to ultraviolet light.
But these ultraviolet absorbing agents can degrade after a period of time, therefore to ultraviolet-absorbing film to purple
The absorption of outside line causes undesirable influence.
Summary of the invention
In view of the above technical problems, the application provides a kind of ultraviolet-absorbing film that chemical property is stable.
A kind of quantum dot film comprising: material of main part;Quantum dot is dispersed in material of main part, absorbs ultraviolet light.
In the quantum dot film, quantum dot can absorb ultraviolet light, and quantum dot has more stable chemical property.Quantum
It, will not be there is a phenomenon where degrading after point absorbs ultraviolet light, the ability which absorbs ultraviolet light, which will not reduce, more will not
Failure.
The fluorescence quantum efficiency of quantum dot is 0%~30% in one of the embodiments,;Preferably, quantum dot is glimmering
Photo-quantum efficiency is 0%~10%.
Material of main part includes: polyvinyl butyral in one of the embodiments,;Auxiliary agent is dispersed in polyvinyl alcohol contracting
In butyraldehyde;Preferably, the number-average molecular weight of polyvinyl butyral is 10000~200000.
Quantum dot in one of the embodiments: auxiliary agent: the mass ratio of polyvinyl butyral be 1:(25000~
35000): (8000~12000).
Auxiliary agent is two tricaprylate of triethylene glycol in one of the embodiments,;Preferably, quantum dot: triethylene glycol two is different pungent
Acid esters: the mass ratio between polyvinyl butyral is 1:(28000~32000): (8500~11500).
Quantum dot includes ZnSe or InP quantum dot in one of the embodiments,.
Quantum dot includes ligand in one of the embodiments,;Preferably, ligand includes n-octyl mercaptan or oleic acid or oleyl amine
Or tri octyl phosphine or trioctyl phosphine oxide.
A kind of structure containing quantum dot film comprising: transparent substrate and quantum dot film, quantum dot film include: main body material
Material;Quantum dot is dispersed in material of main part, to absorb ultraviolet light.
In one of the embodiments, quantum dot film with a thickness of 0.01~1 millimeter.
It in one of the embodiments, include two transparent substrates, two transparent substrates set up separately in the two sides of quantum dot film.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the Quantum Dot Glass of an embodiment in the application.
Identical component has used identical appended drawing reference in the accompanying drawings.Attached drawing only symbolically shows the reality of the application
Apply scheme.
Specific embodiment
Below in conjunction with the application embodiment, technical solutions in the embodiments of the present application is described in detail.It answers
It is noted that described embodiment is only a part of embodiment of the application, rather than whole embodiments.
Present embodiment discloses a kind of quantum dot film, which includes material of main part and quantum dot, the quantum dot point
It is dispersed in material of main part, these quantum dots are to absorb ultraviolet light.
In the quantum dot film, quantum dot can absorb ultraviolet light, and quantum dot has more stable chemical property.Quantum
It, will not be there is a phenomenon where degrading after point absorbs ultraviolet light, the ability which absorbs ultraviolet light, which will not reduce, more will not
It causes to fail.
In the present embodiment, the fluorescence quantum efficiency of quantum dot be 0%~30%, these quantum dot light transfer efficiencies compared with
Difference, these quantum dots only have less light that can emit after absorbing light.Further, the fluorescent quantum effect of quantum dot
Rate is 0%~10%, these quantum dots absorb the light for almost no longer emitting or emitting in the form of light after light
It is very faint.Therefore, after these quantum dots absorb ultraviolet light, the intensity of the no longer light of progress light conversion or conversion is very faint.?
That is using fluorescence quantum efficiency that purple can be absorbed for the quantum dot film after 0%~30% or 0%~10% quantum dot
Outside line, and itself no longer emit light or transmitting light intensity it is very faint, the light of other wavelength in environment is not interfered with or
It influences, therefore adverse effect can't be caused to daily life.
Now, when preparing or using quantum dot, pursuit is higher fluorescence quantum efficiency, and fluorescence quantum efficiency
Also it is further being promoted.Currently, the fluorescence quantum efficiency of some quantum dots can achieve 95% or more.The fluorescent quantum of quantum dot
Efficiency is lower, all can be considered as a kind of disadvantage.
And the quantum dot being used in the present invention, do not pursue higher fluorescence quantum efficiency not only, and need fluorescence volume
The lower sub- efficiency the better.That is, the quantum dot that the present invention uses can absorb a large amount of light, and simultaneously will no longer be absorbed
Smaller part of light is converted in the form of light or only converted to light.Quantum dot is cleverly utilized in quantum dot film in the present invention
Fluorescence quantum efficiency it is low, when this quantum dot for being considered to have obvious disadvantage is arranged in quantum dot film, so that the quantum
While point film absorbs ultraviolet light, almost or only less interference to the light of its all band in environment, it is widely used in daily
It in life, also and to daily life has a adverse impact, becomes a kind of advantage instead, make us unexpected to play
Effect.
Here, the higher quantum dot of fluorescence quantum efficiency can be placed in the ring that temperature is 85 DEG C, relative humidity is 85%
In border, come realize quantum dot fluorescence quantum efficiency reduction.Quantum dot is in this context after 48 hours, fluorescence quantum efficiency
It is substantially reduced, the fluorescence quantum efficiency of these quantum dots can be reduced to 30% or less.
In the present embodiment, quantum dot includes ZnSe or InP quantum dot.The material of the core of these quantum dots be ZnSe or
InP can also include shell or/and ligand etc..
Wherein, the ligand of these quantum dots includes n-octyl mercaptan or oleic acid or oleyl amine or tri octyl phosphine or trioctylphosphine oxidation
Phosphine.After quantum dot includes these ligands, reduce a possibility that quantum dot is reunited in quantum dot film, makes it have preferably point
Property is dissipated, therefore to absorb ultraviolet light on the whole more uniform for quantum dot film.
Material of main part in quantum dot film can be made of polymer or high molecular material etc., and quantum dot is dispersed in these masters
In body material.In the present embodiment, which may include polyvinyl butyral and auxiliary agent.Since polyvinyl alcohol contracts
Butyraldehyde has excellent optical property and chemical stability, and quantum dot film uses polyvinyl butyral as material of main part, can
So that the quantum dot film has excellent optical property and chemical stability.The quantum dot film while absorbing ultraviolet light,
There is excellent permeability to the light of its all band.However, quantum dot is directly dispersing in polyvinyl butyral, quantum dot
Dispersibility it is bad.It can be by the way that corresponding auxiliary agent be added in polyvinyl butyral, so that quantum dot is including poly- second
There is preferable dispersibility in the material of main part of enol butyral and auxiliary agent.
Inventors have found that quantum dot can be made when the number-average molecular weight of polyvinyl butyral is 10000~200000
Film has more preferably stability and optical property.To promote the service life and effect of quantum dot film.
When the mass ratio of quantum dot, auxiliary agent, polyvinyl butyral is 1:(25000~35000): (8000~
12000) when, the quantum dot in the quantum dot film has good dispersibility, is not susceptible to the phenomenon that reuniting, and also has good
The performance of good absorption ultraviolet light.The total mass ratio of quantum dot is in several a ten thousandths in the quantum dot film, it can be seen that quantum
Point only needs less amount that can achieve the effect that good absorption ultraviolet light, therefore the cost of the quantum dot film is relatively low.
These auxiliary agents can for aliphatic dibasic acid ester, Phthalates (including phthalate, to benzene two
Formate ester), benzene polyacid esters, benzoates, polyalcohol esters, chlorinated hydrocarbons, epoxies, citric acid ester type, polyesters
Deng.In the present embodiment, preferred auxiliary agent is two tricaprylate of triethylene glycol.Inventor is found surprisingly that, contracts in polyvinyl alcohol
Two tricaprylate of triethylene glycol is added in butyraldehyde, can make quantum dot that there is very excellent dispersion in polyvinyl butyral
Property.Since the quantum dot film mainly includes polyvinyl butyral, quantum dot is also provided with excellent in the quantum dot film
Dispersibility.To phenomenon and triethylene glycol two isooctyl acid of the quantum dot with excellent dispersibility in polyvinyl butyral
Ester adds related in polyvinyl butyral.Quantum dot in entire quantum dot film have excellent dispersion performance, quantum dot it
Between do not have the generation of agglomeration, the ability for absorbing ultraviolet light does not have and significantly reduces, and absorbs on the whole ultraviolet
Line has homogeneity.
Further, quantum dot, two tricaprylate of triethylene glycol, polyvinyl butyral mass ratio be 1:(28000~
32000): (8500~11500).Quantum dot film in the ratio range has excellent UV absorbing properties and excellent
Chemical stability.
Referring now to Fig. 1, present embodiment further discloses a kind of structure 1 containing quantum dot film, which includes the
One transparent substrate 11 and quantum dot film 12 described above.The quantum dot film 12 includes material of main part and quantum dot, these
Quantum dot is dispersed in material of main part, and ultraviolet light can be absorbed in these quantum dots.To which ultraviolet light can be absorbed in the structure 1, from
And reduce adverse effect of the ultraviolet light to human body etc..
The quantum dot film 12 with a thickness of between 0.01~1 millimeter, while there is good absorption ultraviolet light, and have
Good translucency.
Certainly, the second transparent substrate 13 can also be arranged in the other side of the quantum dot film 12, to form quantum dot film
12 sandwich between the first transparent substrate 11 and the second transparent substrate 13.
Illustrate the specific knot for being somebody's turn to do the structure containing quantum dot film in the invention below by way of several specific embodiments
Structure.
Embodiment 1:
The two sides of quantum dot film are respectively provided with glass substrate.The quantum dot film with a thickness of 0.38 millimeter.The quantum dot film packet
ZnSe quantum dot, two tricaprylate of triethylene glycol, polyvinyl butyral are included, the mass ratio between this three is 1:30000:
10000.The number-average molecular weight of polyvinyl butyral is 100000.
The ligand of ZnSe quantum dot includes n-octyl mercaptan and oleic acid.
Embodiment 2:
The two sides of quantum dot film are respectively provided with pet substrate.The quantum dot film with a thickness of 0.76 millimeter.The quantum dot film includes
InP quantum dot, two tricaprylate of triethylene glycol, polyvinyl butyral, the mass ratio between this three is 1:32000:
10000.The number-average molecular weight of polyvinyl butyral is 12000.
The ligand of InP quantum dot connection includes oleic acid.
Embodiment 3:
Glass substrate is arranged in the side of quantum dot film, and barrier film is arranged in the other side of the quantum dot film.The quantum dot film
With a thickness of 0.05 millimeter.The quantum dot film includes ZnSe quantum dot, dioctyl phthalate, polyvinyl butyral, this three
Mass ratio between person is 1:26000:12000.The number-average molecular weight of polyvinyl butyral is 15000.
The ligand of ZnSe quantum dot connection includes tri octyl phosphine and trioctyl phosphine oxide.
Embodiment 4:
The two sides of quantum dot film are respectively provided with PVC substrate.The quantum dot film with a thickness of 0.50 millimeter.The quantum dot film includes
InP quantum dot, two tricaprylate of triethylene glycol, polyvinyl butyral, the mass ratio between this three are 1:31000:8500.
The number-average molecular weight of polyvinyl butyral is 180000.
The ligand of InP quantum dot connection includes oleyl amine.
Quantum dot film in above-described embodiment 1 to 4 is placed under the long-term irradiation of ultraviolet light, measures these amounts respectively
Ultraviolet radiation absorption map after irradiating when the original state of the structure of son point film and by 800 hours ultraviolet lights.By measurement
It was found that the quantum dot film in embodiment 1 to 4 is after the irradiation of long-time ultraviolet light, there is no significantly decline rate of absorbing UV
Subtract, it is possible to find out that the chemical property of the quantum dot film in these embodiments is more stable, after quantum dot absorbs ultraviolet light,
It can't there is a phenomenon where degrade.
As can be seen that after a while, these contain the ultraviolet of the structure of quantum dot film from above-described embodiment
Absorbability is not substantially reduced.Because these quantum dot films do not occur biggish by the irradiation of prolonged ultraviolet light
Variation, it can be seen that the revealed quantum dot film of the invention and the structure accordingly with the quantum dot film have preferable stablize
Property.
Although inventor has done more detailed elaboration to the technical solution of the application and has enumerated, it should be understood that for
For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious
, cannot all be detached from the essence of the application spirit, the term occurred in the application be used for elaboration to technical scheme and
Understand, the limitation to the application can not be constituted.
Claims (10)
1. a kind of quantum dot film, comprising: material of main part;
Quantum dot is dispersed in the material of main part, to absorb ultraviolet light.
2. quantum dot film according to claim 1, which is characterized in that the fluorescence quantum efficiency of the quantum dot be 0%~
30%;
Preferably, the fluorescence quantum efficiency of the quantum dot is 0%~10%.
3. quantum dot film according to claim 1, which is characterized in that the material of main part includes: polyvinyl butyral;
Auxiliary agent is dispersed in the polyvinyl butyral;
Preferably, the number-average molecular weight of the polyvinyl butyral is 10000~200000.
4. quantum dot film according to claim 3, which is characterized in that the quantum dot: auxiliary agent: polyvinyl butyral
Mass ratio is 1:(25000~35000): (8000~12000).
5. quantum dot film according to claim 3, which is characterized in that the auxiliary agent is two tricaprylate of triethylene glycol;
Preferably, the quantum dot: two tricaprylate of triethylene glycol: mass ratio between polyvinyl butyral be 1:(28000~
32000): (8500~11500).
6. quantum dot film according to any one of claim 1 to 5, which is characterized in that the quantum dot include ZnSe or
InP quantum dot.
7. quantum dot film according to any one of claim 1 to 6, which is characterized in that the quantum dot includes ligand;
Preferably, the ligand includes n-octyl mercaptan or oleic acid or oleyl amine or tri octyl phosphine or trioctyl phosphine oxide.
8. a kind of structure containing quantum dot film, comprising: transparent substrate and quantum dot film, the quantum dot film include: main body material
Material;
Quantum dot is dispersed in the material of main part, to absorb ultraviolet light.
9. the structure according to claim 8 containing quantum dot film, which is characterized in that the quantum dot film with a thickness of
0.01~1 millimeter.
10. the structure according to claim 9 containing quantum dot film, which is characterized in that described including two transparent substrates
Two transparent substrates set up separately in the two sides of quantum dot film.
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CN106833406A (en) * | 2017-02-22 | 2017-06-13 | 杭州福斯特光伏材料股份有限公司 | A kind of high refractive index nano inorganic matter hydridization photovoltaic encapsulation material |
CN107238973A (en) * | 2017-07-19 | 2017-10-10 | 苏州星烁纳米科技有限公司 | Quantum dot film and preparation method thereof |
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